JP2006270041A - 熱伝導材料及びその製造方法 - Google Patents
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- JP2006270041A JP2006270041A JP2005315320A JP2005315320A JP2006270041A JP 2006270041 A JP2006270041 A JP 2006270041A JP 2005315320 A JP2005315320 A JP 2005315320A JP 2005315320 A JP2005315320 A JP 2005315320A JP 2006270041 A JP2006270041 A JP 2006270041A
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- 239000004020 conductor Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 89
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000002041 carbon nanotube Substances 0.000 claims description 85
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 85
- 239000012782 phase change material Substances 0.000 claims description 30
- 239000011159 matrix material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
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- 238000001020 plasma etching Methods 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 230000009466 transformation Effects 0.000 abstract 1
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- 230000001070 adhesive effect Effects 0.000 description 11
- 239000012071 phase Substances 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 9
- -1 polyethylene Polymers 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 6
- 229920000728 polyester Polymers 0.000 description 6
- 229920006324 polyoxymethylene Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229920002379 silicone rubber Polymers 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229930040373 Paraformaldehyde Natural products 0.000 description 3
- 229930182556 Polyacetal Natural products 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000002048 multi walled nanotube Substances 0.000 description 3
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920000307 polymer substrate Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 239000004800 polyvinyl chloride Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000012802 nanoclay Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D20/00—Heat storage plants or apparatus in general; Regenerative heat-exchange apparatus not covered by groups F28D17/00 or F28D19/00
- F28D20/02—Heat storage plants or apparatus in general; Regenerative heat-exchange apparatus not covered by groups F28D17/00 or F28D19/00 using latent heat
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/02—Constructions of heat-exchange apparatus characterised by the selection of particular materials of carbon, e.g. graphite
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F2013/005—Thermal joints
- F28F2013/006—Heat conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/14—Thermal energy storage
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】本発明の実施例に係る熱伝導材料は、基材と、該基材に分散された複数の炭素ナノチューブと、を含む。ここで、前記基材は、第一表面及びそれと反対の第二表面を有する。前記複数の炭素ナノチューブはそれぞれ前記基板の第一表面から第二表面まで延伸し、少なくとも一方の表面から外部へ露出される。少なくとも一方の前記表面には、相変化材料層が形成されている。本発明によれば、熱伝導面に熱伝導パスが形成されるので、熱抵抗を減少し、熱伝導材料の熱伝導効率を高めることができる。
【選択図】図3
Description
11 基材
12 炭素ナノチューブ
13 相変化材料
111 第一表面
112 第二表面
121、122 端部
14 シリコンの基材
15 支持基材
16 粘着剤
Claims (8)
- 基材と、該基材に分散された複数の炭素ナノチューブと、を含み、
前記基材は、第一表面及びそれと反対の第二表面を有し、
前記複数の炭素ナノチューブはそれぞれ前記基材の第一表面から第二表面までに延伸する熱伝導材料であり、
前記複数の炭素ナノチューブは少なくとも一方の前記表面から外部に露出され、
少なくとも一方の前記表面には、相変化材料層が形成されていることを特徴とする熱伝導材料。 - 前記炭素ナノチューブは前記相変化材料層から露出されることを特徴とする、請求項1に記載の熱伝導材料。
- 前記複数の炭素ナノチューブは炭素ナノチューブのマトリックスからなることを特徴とする、請求項1又は2に記載の熱伝導材料。
- 前記複数の炭素ナノチューブは熱伝導の方向に平行して配列されることを特徴とする、請求項1〜3のいずれか一項に記載の熱伝導材料。
- 前記相変化材料の相変化温度が20℃〜90℃であることを特徴とする、請求項1に記載の熱伝導材料。
- 前記相変化材料の厚さが1μm〜100μmであることを特徴とする、請求項1に記載の熱伝導材料。
- 複数の炭素ナノチューブを準備する工程と、
前記炭素ナノチューブの少なくとも一方の端部に保護層を形成する工程と、
前記炭素ナノチューブに基材の液体を注入して固化される工程と、
前記保護層を除去する工程と、
前記保護層が除去された基材の少なくともの一側の表面に相変化材料層を形成する工程と、
を含むことを特徴とする熱伝導材料の製造方法。 - 前記保護層を除去した後、反応性イオンエッチング方法により前記基材をエッチングすることを特徴とする、請求項7に記載の熱伝導材料の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200510033840.9 | 2005-03-24 | ||
CNB2005100338409A CN100337981C (zh) | 2005-03-24 | 2005-03-24 | 热界面材料及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006270041A true JP2006270041A (ja) | 2006-10-05 |
JP4713301B2 JP4713301B2 (ja) | 2011-06-29 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005315320A Active JP4713301B2 (ja) | 2005-03-24 | 2005-10-28 | 熱伝導材料及びその製造方法 |
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Country | Link |
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US (1) | US7393428B2 (ja) |
JP (1) | JP4713301B2 (ja) |
CN (1) | CN100337981C (ja) |
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US7393428B2 (en) | 2008-07-01 |
US20080128122A1 (en) | 2008-06-05 |
JP4713301B2 (ja) | 2011-06-29 |
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