JP2006269443A - Electron source having carbon nanotube, electron microscope using it, and electron beam drawing device - Google Patents
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本発明はカーボンナノチューブを有する電子源とそれを用いた電子顕微鏡および電子線描画装置に関する。 The present invention relates to an electron source having carbon nanotubes, an electron microscope and an electron beam drawing apparatus using the electron source.
電子顕微鏡の更なる高分解能化，高輝度化には（１）電子源サイズを小さくすること、（２）電子源を高輝度化すること、（３）色収差の影響を低減するために電子源からの電子エネルギー幅を小さくすること、（４）放出電子ビームを安定化すること、が必要である。そして電子源としてＬａＢ6 からなる熱電子放出型，ＺｒＯ／Ｗからなるショットキー型，針先端を電界研磨により尖らせたタングステンからなる電界放出型がある。高分解能化，高輝度化の点では、電界放出型電子源が最も優れているが、以下のような欠点もある。（１）１０-8Ｐａ以上の超高真空状態にしないと電界放出が起こらないため、排気系が大掛かりなものとなり、装置の小型化が困難であるとともに、コストアップにつながる。（２）引出電圧を数ｋＶと非常に大きなものにしないと電界放出しないため、今後急速な成長が見込まれる有機物，生物関連試料に対しては、大きなダメージを与え、十分な高精度観察ができない。（３）エミッタ表面で吸着，脱離する残留ガス分子の影響や残留ガスイオン衝撃によるエミッタ先端形状変化による放出電流の時間変動が大きい。 To further increase the resolution and brightness of the electron microscope, (1) to reduce the size of the electron source, (2) to increase the brightness of the electron source, and (3) to reduce the influence of chromatic aberration, the electron source (4) Stabilizing the emitted electron beam is necessary. The electron source includes a thermionic emission type made of LaB 6, a Schottky type made of ZrO / W, and a field emission type made of tungsten with the tip of the needle sharpened by electric field polishing. The field emission electron source is the most excellent in terms of high resolution and high brightness, but has the following drawbacks. (1) Since field emission does not occur unless an ultrahigh vacuum state of 10 −8 Pa or higher is used, the exhaust system becomes large, making it difficult to reduce the size of the apparatus and increasing the cost. (2) Field emission will not occur unless the extraction voltage is set to a very high value of several kV. Therefore, organic substances and biological samples that are expected to grow rapidly will be damaged greatly, and sufficient high-precision observation will not be possible. . (3) The time variation of the emission current due to the influence of residual gas molecules adsorbed and desorbed on the emitter surface and the change of the shape of the emitter tip due to the residual gas ion bombardment is large.
また、半導体プロセス等で用いられている測長ＳＥＭにおいては、現状ショットキー型電子源が用いられているが、観察試料上での帯電防止及び試料ダメージ低減のために、低加速電圧下での更なる高分解能化が重要な課題となっている。 In the length measurement SEM used in the semiconductor process or the like, the current Schottky electron source is used. However, in order to prevent charge on the observation sample and reduce sample damage, Higher resolution is an important issue.
さらに、電子線に感応するレジストを塗布した試料基板に電子線を照射し、各種回路パターンを形成する電子線描画装置においては、各種回路パターンの高精細化に伴い、極細プローブ径が得られる電子源が必要となってきている。従来、タングステンやＬａＢ6 からなる熱電子放出型電子源が使用されてきたが、これらの電子源はビーム電流が多くとれるという利点があるものの、絶対的なエミッタ先端半径の大きさに起因する非点収差が大きく、２０ｎｍ以下の描画を行うことができない。そのため、最近、電界放出型電子源を使用するようになったが、ビーム電流の少なさと前記したような原因により、ビーム電流の不安定さという新たな問題があり、確実な描画を行うために、電子線の露光量すなわち露光時間を増やさなければならず、効率が悪いという課題がある。 Furthermore, in an electron beam drawing apparatus that forms various circuit patterns by irradiating a sample substrate coated with a resist sensitive to electron beams to form various circuit patterns, an electron with which an ultrafine probe diameter can be obtained as the various circuit patterns become higher in definition. A source is needed. Conventionally, a thermionic emission electron source made of tungsten or LaB 6 has been used, but these electron sources have the advantage that a large beam current can be obtained, but they do not depend on the absolute emitter tip radius. Astigmatism is large and drawing of 20 nm or less cannot be performed. For this reason, the field emission electron source has recently been used, but due to the low beam current and the above-mentioned causes, there is a new problem of instability of the beam current. However, the exposure amount of the electron beam, that is, the exposure time must be increased, and there is a problem that the efficiency is low.
一方で最近、表示装置用の新電子源としてカーボンナノチューブを多数平面基板に配列させた電子源が盛んに検討されている。これはカーボンナノチューブの先端径がナノレベルと非常に小さいため、低電圧でも電界放出が可能であり、また炭素原子間結合が金属に比べ非常に強固なため、前記イオン衝撃にも強く、放出電流の安定性に優れ、さらに比較的低真空でも電子放出するという特徴を有しているからである。 On the other hand, recently, as a new electron source for display devices, an electron source in which a large number of carbon nanotubes are arranged on a flat substrate has been actively studied. This is because the tip diameter of the carbon nanotube is very small at the nano level, so field emission is possible even at low voltage, and the bond between carbon atoms is very strong compared to metal, so it is also resistant to ion bombardment and the emission current. This is because it has the characteristics of being excellent in stability and emitting electrons even in a relatively low vacuum.
そこで、単一カーボンナノチューブ、あるいは数本のカーボンナノチューブが見かけ上一本に束になったバンドル状カーボンナノチューブを電子顕微鏡および電子線描画装置の電子源に適用すれば、電子放出サイトがナノレベルであるため、電子放出角が小さく、さらに放出される電子のエネルギー幅も小さいため、従来に比べ、高分解能化，高精細加工が可能となる。 Therefore, if single-walled carbon nanotubes or bundle-like carbon nanotubes in which several carbon nanotubes are apparently bundled are applied to the electron source of an electron microscope and an electron beam lithography system, the electron emission site is at the nano level. Therefore, since the electron emission angle is small and the energy width of the emitted electrons is also small, higher resolution and high-definition processing can be achieved than in the prior art.
しかしながら単一カーボンナノチューブ、あるいは複数のカーボンナノチューブが見かけ上一本に束なったバンドル状カーボンナノチューブを電子顕微鏡や電子線描画装置の電子源に適用した検討例はほとんどなく、単一カーボンナノチューブの電界放出特性に関しては例えば、M. J. Fransen , Th.L. van Rooy , P. Kruit, Appl.Surface Sci. 146
(1999) 312-327等の報告がある程度である。
However, there are few examples of studying single carbon nanotubes or bundled carbon nanotubes in which a plurality of carbon nanotubes are apparently bundled as an electron source in an electron microscope or electron beam lithography system. Regarding release characteristics, see, for example, MJ Fransen, Th.L.van Rooy, P. Kruit, Appl.Surface Sci. 146
(1999) 312-327 etc. are reported to some extent.
上記報告で使用されているカーボンナノチューブ電子源の構造は、図１に示すように、基材であるタングステン針先端側面にカーボンコンタミで固定した構造となっている。このような構造ではタングステン針とカーボンナノチューブの接触面積が非常に小さくなってしまうため、これを電子顕微鏡および電子線描画装置の電子源に適用した場合には次のような問題が解決できていない。（１）カーボンナノチューブとタングステン針のオーミックコンタクトがとれず、接合部での電気抵抗が大きくなり、カーボンナノチューブ先端における電界強度が印加した電圧に比べかなり低下してしまい、電界放出しきい電圧が大きくなってしまう。（２）ある程度電流が流れた状態では、前記理由により、電子放出サイトへの電子の供給が阻害され、それ以上大きな電圧を印加しても電流が飽和してしまい、大きな電流を得ることができない。（３）前記理由により、接合部での発熱量が大きくなり、基材であるタングステン針が溶解する。（４）接合強度が小さいために、静電気の帯電および衝撃などにより容易に剥離する。（５）タングステン針側面にカーボンナノチューブが取り付けられているため、電子銃に組み込んだ後の電子ビーム軸調整が困難になる。 As shown in FIG. 1, the structure of the carbon nanotube electron source used in the above report is a structure fixed to the side surface of the tip of a tungsten needle as a base material with carbon contamination. In such a structure, the contact area between the tungsten needle and the carbon nanotube becomes very small. Therefore, when this is applied to an electron source of an electron microscope and an electron beam drawing apparatus, the following problems cannot be solved. . (1) The ohmic contact between the carbon nanotube and the tungsten needle cannot be obtained, the electrical resistance at the junction is increased, the electric field strength at the tip of the carbon nanotube is considerably lower than the applied voltage, and the field emission threshold voltage is large. turn into. (2) In a state where a certain amount of current flows, the supply of electrons to the electron emission site is hindered due to the above-described reason, and even if a larger voltage is applied, the current is saturated and a large current cannot be obtained. . (3) For the above reasons, the amount of heat generated at the joint is increased, and the tungsten needle as the base material is dissolved. (4) Since the bonding strength is small, it is easily peeled off due to electrostatic charging and impact. (5) Since the carbon nanotube is attached to the side surface of the tungsten needle, it is difficult to adjust the electron beam axis after being incorporated into the electron gun.
また、導電性針先端部に触媒金属粒子を塗布して、ＣＶＤ法等で触媒金属粒子からカーボンナノチューブを直接成長させる方法が知られているが、成長したカーボンナノチューブの結晶性，純度，細末性を同時に満足する電子放出特性に優れたカーボンナノチューブを製造した例はない。また、成長するカーボンナノチューブの直径は、触媒金属粒子の粒子径に依存し、触媒金属ナノ粒子一個を導電性針先端に配置する必要があり、製造上もかなり難しい。たとえ触媒金属ナノ粒子から一本のカーボンナノチューブを成長させることが出来たとしても、触媒金属粒子は、カーボンナノチューブの成長と共に、カーボンナノチューブ成長方向に移動してしまうため、導電性針とカーボンナノチューブとの接合部に触媒金属粒子がなくなってしまい、上記のような接合不良に起因する諸問題を解決することはできない。また、触媒金属粒子が取り残された場合には、そこから複数本のカーボンナノチューブがランダムに成長してしまうという課題もある。 In addition, a method is known in which catalytic metal particles are applied to the tip of a conductive needle and carbon nanotubes are directly grown from the catalytic metal particles by CVD or the like. However, the crystallinity, purity, and fineness of the grown carbon nanotubes are known. There has been no example of producing a carbon nanotube excellent in electron emission characteristics that simultaneously satisfies the properties. In addition, the diameter of the growing carbon nanotube depends on the particle diameter of the catalyst metal particles, and one catalyst metal nanoparticle needs to be arranged at the tip of the conductive needle, which is considerably difficult in production. Even if a single carbon nanotube can be grown from the catalytic metal nanoparticle, the catalytic metal particle moves in the carbon nanotube growth direction as the carbon nanotube grows. Thus, the catalyst metal particles disappear in the joint portion, and the problems caused by the poor joint cannot be solved. In addition, when catalyst metal particles are left behind, there is also a problem that a plurality of carbon nanotubes grow at random.
以上本発明の目的は、カーボンナノチューブと導電性基材とのオーミックコンタクトが十分確保でき、十分な接合強度を有するとともに、ビーム軸調整が容易な高信頼性電子源を提供することにある。 As described above, an object of the present invention is to provide a highly reliable electron source that can sufficiently ensure ohmic contact between a carbon nanotube and a conductive substrate, has a sufficient bonding strength, and can easily adjust a beam axis.
上記目的を達成するための手段の一つは、カーボンナノチューブを有する電子源であって、導電性基材と、該導電性基材とオーミックコンタクトするカーボンナノチューブと、を有することを特徴とする。 One of means for achieving the above object is an electron source having carbon nanotubes, characterized by having a conductive substrate and carbon nanotubes in ohmic contact with the conductive substrate.
若しくは、該導電性基材とオーミックコンタクトするカーボンナノチューブは、前記導電性基材に接合される導電性接合材料と、該導電性接合材料に接合されたカーボンナノチューブと、を有することを特徴とする。これにより、接合部での電気抵抗を小さくでき、電界放出しきい電圧の増大を防ぎ、電子放出サイトへの電子の供給量を多くし、また接合部での発熱量を抑え、導電性基材の溶融等を防ぎ、電子源としての信頼性を高めることが出来る。 Alternatively, the carbon nanotube in ohmic contact with the conductive substrate has a conductive bonding material bonded to the conductive substrate and a carbon nanotube bonded to the conductive bonding material. . As a result, the electrical resistance at the junction can be reduced, the field emission threshold voltage can be prevented from increasing, the amount of electrons supplied to the electron emission site can be increased, and the amount of heat generated at the junction can be suppressed. Can be prevented, and the reliability as an electron source can be improved.
以上、カーボンナノチューブと導電性基材とのオーミックコンタクトが確保でき、十分な接合強度を有するとともに、ビーム軸調整が容易な高信頼性電子源を提供することができる。 As described above, an ohmic contact between the carbon nanotube and the conductive substrate can be ensured, and a highly reliable electron source having sufficient bonding strength and easy beam axis adjustment can be provided.
本発明の実施形態について図面を参照しつつ詳細に説明する。なお、本明細書における導電性針，導電性プレートは導電性基材の一例であるとする。 Embodiments of the present invention will be described in detail with reference to the drawings. Note that the conductive needle and conductive plate in this specification are examples of a conductive substrate.
（実施例１）
図２は本実施例に係る電子源を示す。本実施例に係る電子源は、先端に微細孔を有する導電性針と、微細孔に設けられる導電性針よりも低融点の導電性接合材料と、導電性接合材料に取付けられたカーボンナノチューブと、を有して構成される。これにより、電子源におけるカーボンナノチューブと導電性針との接合性に関する課題が解決でき、かつカーボンナノチューブと導電性針とを安定的にオーミック接触させることができる。
Example 1
FIG. 2 shows an electron source according to this embodiment. An electron source according to the present embodiment includes a conductive needle having a microhole at the tip, a conductive bonding material having a melting point lower than that of the conductive needle provided in the microhole, and a carbon nanotube attached to the conductive bonding material. , And is configured. Thereby, the problem regarding the bondability between the carbon nanotube and the conductive needle in the electron source can be solved, and the carbon nanotube and the conductive needle can be stably brought into ohmic contact.
カーボンナノチューブを取付ける導電性針の材料としては、導電性，熱伝導性に優れ、比較的高融点の金属あるいはカーボンが好ましく、金属としては、タングステン，モリブデン，チタン，白金、あるいはそれらを有する合金が挙げられるが、これらに限定されるものではない。 As a material of the conductive needle for attaching the carbon nanotube, a metal or carbon having a relatively high melting point and excellent in conductivity and thermal conductivity is preferable, and as the metal, tungsten, molybdenum, titanium, platinum, or an alloy having them is used. Although it is mentioned, it is not limited to these.
導電性針に塗布する導電性接合材料としてはカーボンナノチューブおよび導電性基材とのぬれ性が比較的良く、さらに好ましくは導電性基材との熱膨張係数が近いもので、導電性基材の融点以下の温度で溶融し、かつカーボンナノチューブが真空加熱されても分解しない温度以下で溶融するものであれば特に限定されるものではないが、製造性の観点から言えば、融点が１５００℃以下の金属が望ましく、リチウム，ベリリウム，マグネシウム，アルミニウム，カリウム，カルシウム，マンガン，コバルト，ニッケル，ルビジウム，ストロンチウム，テルル，セシウム，バリウム，ランタン，ビスマス，鉛，スズ，インジウム，カドミウム，銅，硫黄，セレン，ガリウム等のうちの少なくとも一つから構成される金属あるいは合金が挙げられる。 The conductive bonding material applied to the conductive needle has relatively good wettability with the carbon nanotube and the conductive base material, and more preferably has a thermal expansion coefficient close to that of the conductive base material. Although it is not particularly limited as long as it melts at a temperature below the melting point and melts at a temperature below which the carbon nanotubes are not decomposed even when heated under vacuum, from the viewpoint of manufacturability, the melting point is 1500 ° C. or less Preferred metals are lithium, beryllium, magnesium, aluminum, potassium, calcium, manganese, cobalt, nickel, rubidium, strontium, tellurium, cesium, barium, lanthanum, bismuth, lead, tin, indium, cadmium, copper, sulfur, selenium. And metal or alloy composed of at least one of gallium, etc. .
なお本実施例に係る電子源において、微細孔を形成していない導電性針の先端部にそれよりも低融点である導電性接合材料を塗布し、カーボンナノチューブを取付ける構成としても良いが、図２に示すように導電性針の先端中央部に微細孔を設けた方が接合信頼性の点でより望ましい。また、導電性針の先端中央部に微細孔ではなく図３で示すように導電性針の一部に凹部を形成し、その凹部に導電性接合材料を設け、カーボンナノチューブを取付ける構成としても良い。 In the electron source according to the present embodiment, a carbon nanotube may be attached by applying a conductive bonding material having a lower melting point to the tip of a conductive needle in which no micropore is formed. As shown in FIG. 2, it is more desirable in terms of bonding reliability to provide a fine hole in the center of the tip of the conductive needle. Moreover, it is good also as a structure which attaches a carbon nanotube by forming a recessed part in a part of conductive needle as shown in FIG. 3 at the front-end | tip center part of a conductive needle, providing a conductive bonding material in the recessed part. .
次に本実施例に係る電子源の製造方法を示す。まずエッチング等で先端を尖らせた導電性針の先端中央部に、ＦＩＢ加工あるいはフォトリソグラフ法等で微細孔（若しくは凹部等）を形成した後、導電性針の先端部にそれよりも低融点である導電性接合材料をスパッタ，蒸着あるいは浸漬などで塗布する。これはカーボンナノチューブを取付ける材料となる。そして導電性接合材料が塗布された微細孔に一本のカーボンナノチューブを挿入し、該導電性接合材料の凝固温度まで基材を冷却し固化する。これにより図２に示す電子源を製造できる。 Next, an electron source manufacturing method according to the present embodiment will be described. First, after forming a fine hole (or recess, etc.) in the center of the tip of the conductive needle with the tip sharpened by etching or the like by FIB processing or photolithographic method, the melting point is lower than that at the tip of the conductive needle. The conductive bonding material is applied by sputtering, vapor deposition or immersion. This is a material for mounting carbon nanotubes. Then, a single carbon nanotube is inserted into the micropores coated with the conductive bonding material, and the substrate is cooled and solidified to the solidification temperature of the conductive bonding material. Thereby, the electron source shown in FIG. 2 can be manufactured.
以上、カーボンナノチューブと導電性基材とのオーミックコンタクトが確保でき、十分な接合強度を有する高信頼性の電子源を提供することができる。またこの電子源を電子顕微鏡に用いることで、従来機種と比べ、高分解能化，高輝度化，低加速電圧化による試料ダメージの低減化が可能となる。また電子放出角が小さいため、コンデンサーレンズにより電子ビームを絞る度合いが低減するため、コンデンサーレンズの一部あるいは全てを省略できるとともに、従来電子源に比べ、低真空度でも電子放出するため、真空排気系が簡略化でき、更には従来機種と比べ、低加速電圧化できるため、電子銃周りの熱発生が低減され、従来機種のように電子銃周りを冷却水により冷却しなくても空冷で十分となり、冷却系を省略あるいは簡略化できるため、低コスト化，小型化を実現する電子顕微鏡および高精細化，高効率化，低コスト化，小型化を実現する電子線描画装置を提供することができる。なお、本実施例で説明のために用いた導電性針は導電性基材の一例であり、最も効率よく電子を放出できる形態として説明したものである。 As described above, an ohmic contact between the carbon nanotube and the conductive base material can be ensured, and a highly reliable electron source having sufficient bonding strength can be provided. In addition, by using this electron source in an electron microscope, it is possible to reduce sample damage by increasing the resolution, increasing the brightness, and decreasing the acceleration voltage compared to the conventional model. In addition, since the electron emission angle is small, the degree to which the electron beam is focused by the condenser lens is reduced, so that part or all of the condenser lens can be omitted, and electrons are emitted even at a lower vacuum level than the conventional electron source. Since the system can be simplified and the acceleration voltage can be lowered compared to the conventional model, heat generation around the electron gun is reduced, and air cooling is sufficient even if the periphery of the electron gun is not cooled by cooling water as in the conventional model. Since the cooling system can be omitted or simplified, it is possible to provide an electron microscope that realizes cost reduction and downsizing and an electron beam drawing apparatus that realizes high definition, high efficiency, low cost, and downsizing. it can. In addition, the conductive needle used for description in the present embodiment is an example of a conductive substrate, and has been described as a form that can emit electrons most efficiently.
（実施例２）
図４は本実施例に係る電子源を示す。本実施例に係る電子源は、実施例１に記載した電子源のカーボンナノチューブに導電性接合材料よりも高融点の導電性材料を数層被覆した（被覆層を設けた）構成となっている。この構成とすることにより、導電性接合材料がカーボンナノチューブとぬれ性が余り良くない場合であっても導電性接合材料とカーボンナノチューブ双方とぬれ性の良い材料を挟むことで、全体としてぬれ性を良くして接合信頼性を高めることができる。また、カーボンナノチューブの周囲に被覆層を設けることで更なる耐イオン衝撃性向上を図ることができる。但し、カーボンナノチューブを被覆する層（被覆層）が厚すぎると直径が小さいというカーボンナノチューブの利点が薄れてしまうため、各被覆層の厚さは数ｎｍ〜数十ｎｍ程度が良い。
(Example 2)
FIG. 4 shows an electron source according to this embodiment. The electron source according to this example has a configuration in which the carbon nanotubes of the electron source described in Example 1 are coated with several layers of a conductive material having a melting point higher than that of the conductive bonding material (a coating layer is provided). . By adopting this configuration, even when the conductive bonding material is not so wettable with the carbon nanotubes, the wettability is improved as a whole by sandwiching both the conductive bonding material and the carbon nanotubes with good wettability materials. This improves the bonding reliability. Further, by providing a coating layer around the carbon nanotubes, it is possible to further improve the ion impact resistance. However, if the carbon nanotube-coated layer (coating layer) is too thick, the advantage of the carbon nanotube that the diameter is small is diminished. Therefore, the thickness of each coating layer is preferably about several nm to several tens of nm.
ここで、本実施例に係る電子源について図４を用いて具体例を説明する。導電性針はタングステン、導電性接合材料はスズ系低融点合金である。スズ系低融点金属合金とカーボンナノチューブとは余りぬれ性が良くないため、まずカーボンナノチューブとぬれ性の良い金属、例えば炭化物を形成しやすいチタン，ハフニウム，ジルコニウム，タンタル，ニオブ，クロム，モリブデン，マンガン，アルミニウム，カルシウム，鉄，ニッケル，コバルト，タングステン，シリコン等を第一の金属被覆層として形成し、更にその外側に第一の金属被覆層とスズ系低融点合金の両方にぬれ性が良くスズ系低融点合金よりも高融点な金属である銅，ニッケル，銀，金などを第二の金属被覆層として形成する。これによりカーボンナノチューブ側から徐々に導電性接合材料とのぬれ性を高めることができ、材料選択の裕度を高めることができ、かつ耐イオン衝撃性向上を図ることができる。 Here, a specific example of the electron source according to the present embodiment will be described with reference to FIG. The conductive needle is tungsten, and the conductive bonding material is a tin-based low melting point alloy. Since tin-based low melting point metal alloys and carbon nanotubes are not very wettable, carbon nanotubes and metals with good wettability, such as titanium, hafnium, zirconium, tantalum, niobium, chromium, molybdenum, and manganese, are easy to form carbides. , Aluminum, Calcium, Iron, Nickel, Cobalt, Tungsten, Silicon, etc. are formed as the first metal coating layer, and on the outer side, both the first metal coating layer and the tin-based low melting point alloy have good wettability and tin. Copper, nickel, silver, gold or the like, which is a metal having a higher melting point than that of the low-melting alloy, is formed as the second metal coating layer. Thereby, the wettability with the conductive bonding material can be gradually increased from the carbon nanotube side, the margin of material selection can be increased, and the ion impact resistance can be improved.
また、導電性針であるタングステンとスズ系低融点合金も余りぬれ性が良くないため、導電性針全体あるいは先端部（微細孔内部若しくは凹部）にタングステンとスズ系低融点合金の両方にぬれ性が良く、スズ系低融点合金よりも高融点な金属、例えば、銅，ニッケル，銀，金などを金属被覆層として形成しておくことも良い。なおもちろんぬれ性に応じて金属被覆層を設けるか否かは自由である。さらに、カーボンナノチューブ全体に金属被覆層を設けること若しくは接合に係る部分のみに金属被覆層を設けることは必要に応じて選択可能である。この意味において金属被覆層により被覆されるとは、全体に被覆されている場合のみならず、接合に係る部分のみに金属被覆層が設けられているものも含まれるとする。 In addition, since tungsten and tin-based low melting point alloy, which are conductive needles, are not very wettable, wetability of both tungsten and tin-based low melting point alloys on the entire conductive needle or at the tip (inside or inside the microscopic hole). It is also possible to form a metal coating layer of a metal having a higher melting point than that of the tin-based low melting point alloy, such as copper, nickel, silver, or gold. Of course, it is free to provide the metal coating layer according to the wettability. Furthermore, providing the metal coating layer on the entire carbon nanotubes or providing the metal coating layer only on the portion related to bonding can be selected as necessary. In this sense, the term “covered with a metal coating layer” includes not only the case where the metal coating layer is entirely covered, but also includes the case where the metal coating layer is provided only on the portion related to the bonding.
また、カーボンナノチューブは特に限定されるものではないが、電子源サイズの点から言えば、一本であることが好ましい。但し電子線描画装置等のように大電流が必要な場合には、全体の直径が１００ｎｍ以下であるならば、数本のカーボンナノチューブ（金属被覆層も含む）が見かけ上一本に束なったバンドル状カーボンナノチューブであっても良い。 Further, the carbon nanotube is not particularly limited, but it is preferably one from the viewpoint of the electron source size. However, when a large current is required as in an electron beam drawing apparatus, several carbon nanotubes (including a metal coating layer) are apparently bundled into one if the overall diameter is 100 nm or less. It may be a bundle-like carbon nanotube.
これら金属被覆層の製造方法としては、蒸着法，ＣＶＤ法，スパッタ法等がある。 Examples of methods for producing these metal coating layers include vapor deposition, CVD, and sputtering.
以上、カーボンナノチューブと導電性基材とのオーミックコンタクトが確保でき、十分な接合強度を有し、各材料間のぬれ性がよく、かつ耐イオン衝撃性が高い高信頼性の電子源を提供することができる。またこの電子源を電子顕微鏡に用いることで、従来機種と比べ、高分解能化，高輝度化，低加速電圧化による試料ダメージの低減化，低コスト化，小型化を実現する電子顕微鏡および高精細化，高効率化，低コスト化，小型化を実現する電子線描画装置を提供することができる。 As described above, an ohmic contact between the carbon nanotube and the conductive base material can be ensured, sufficient bonding strength is provided, wettability between materials is high, and a highly reliable electron source having high ion impact resistance is provided. be able to. Also, by using this electron source for an electron microscope, an electron microscope and a high-definition that achieves higher resolution, higher brightness, lower sample damage, lower costs, and smaller size by lowering the acceleration voltage compared to conventional models. It is possible to provide an electron beam lithography system that realizes high efficiency, high efficiency, low cost, and miniaturization.
（実施例３）
本実施例に係る電子源を図５に示す。
(Example 3)
FIG. 5 shows an electron source according to this example.
図５に係る電子源は、鋭利な先端形状（先端部）及びその先端部に微細孔を有する導電性プレートと、微細孔に設けられる導電性針よりも低融点の導電性接合材料と、導電性接合材料に取付けられたカーボンナノチューブと、を有して構成される。カーボンナノチューブを取付ける導電性基材の形状としては、先端形状が鋭利であるほど電界集中しやすいため、導電性プレートの先端はある程度鋭利であることが好ましい。 An electron source according to FIG. 5 includes a sharp tip shape (tip portion) and a conductive plate having a fine hole at the tip portion, a conductive bonding material having a melting point lower than that of a conductive needle provided in the fine hole, Carbon nanotubes attached to the conductive bonding material. As the shape of the conductive base material to which the carbon nanotubes are attached, the sharper the tip shape, the easier the electric field concentrates. Therefore, the tip of the conductive plate is preferably sharp to some extent.
（実施例４）
本実施例に係る電子源を図６（ａ），（ｂ）に示す。
Example 4
An electron source according to the present embodiment is shown in FIGS. 6 (a) and 6 (b).
図６（ａ）に係る電子源は、Ｖ字部分（先端部分）に微細孔が設けられたＶ字型フィラメント形状の導電性基材と、微細孔に設けられる導電性針よりも低融点の導電性接合材料と、導電性接合材料に取付けられたカーボンナノチューブと、を有して構成される。 The electron source according to FIG. 6 (a) has a V-shaped filament-shaped conductive base material in which a fine hole is provided in the V-shaped portion (tip portion) and a lower melting point than the conductive needle provided in the fine hole. A conductive bonding material and a carbon nanotube attached to the conductive bonding material are included.
図６（ｂ）に係る電子源は、Ｖ字型のフィラメント形状を有する導電性基材と、Ｖ字型のフィラメント形状を有する導電性基材のＶ字部分（先端部分）に取付けられ、先端に微細孔を有する導電性針と、微細孔に設けられる導電性針よりも低融点の導電性接合材料と、導電性接合材料に取付けられたカーボンナノチューブと、を有して構成される。 The electron source according to FIG. 6B is attached to a conductive base material having a V-shaped filament shape and a V-shaped portion (front end portion) of the conductive base material having a V-shaped filament shape. A conductive needle having a fine hole, a conductive bonding material having a melting point lower than that of the conductive needle provided in the fine hole, and a carbon nanotube attached to the conductive bonding material.
カーボンナノチューブを取付ける導電性基材の形状としては、先端形状が鋭利であるほど電界集中しやすいため、ある程度鋭利なプレートとすることで電界を集中させて高出力，高信頼性の電子源を実現することができ、更に本実施例に係る電子源では、導電性基材がＶ字型のフィラメント形状であるため、フィラメントに電流を流すことで取付けられたカーボンナノチューブを容易に加熱でき、カーボンナノチューブ表面の吸着ガスを除去することが可能となる。 As the shape of the conductive substrate for mounting carbon nanotubes, the sharper the tip shape, the easier it is to concentrate the electric field. By using a sharp plate to some extent, the electric field is concentrated and a high-output, high-reliability electron source is realized. Furthermore, in the electron source according to the present embodiment, since the conductive substrate has a V-shaped filament shape, the attached carbon nanotube can be easily heated by passing an electric current through the filament. It becomes possible to remove the adsorption gas on the surface.
以上、カーボンナノチューブと導電性基材とのオーミックコンタクトが確保でき、十分な接合強度を有し、カーボンナノチューブ表面の吸着ガスをも除去することができる高信頼性の電子源が提供することができる。 As described above, it is possible to provide a highly reliable electron source that can secure ohmic contact between the carbon nanotube and the conductive substrate, has sufficient bonding strength, and can also remove the adsorbed gas on the surface of the carbon nanotube. .
（実施例５）
本実施例に係る電子源を図７を用いて説明する。本実施例に係る電子源は実施例１において作成された電子源におけるカーボンナノチューブと導電性接合材料との接合部周辺に高融点金属或いはカーボンを塗布し、導電性接合材料を封止する被覆材を設けた構成となっている。別言すれば、被覆材を有し、被覆材と導電性基材とで導電性接合材料を封止したことを特徴とする。
(Example 5)
The electron source according to this embodiment will be described with reference to FIG. The electron source according to the present example is a coating material for applying a refractory metal or carbon to the periphery of the junction between the carbon nanotube and the conductive bonding material in the electron source prepared in Example 1, and sealing the conductive bonding material Is provided. In other words, it has a covering material, and the conductive bonding material is sealed with the covering material and the conductive base material.
このように被覆材を設けることで電子源が導電性接合材料の融点以上の温度となった場合であっても接合状態を確保することができる。なおこの場合の高融点金属とは導電性接合材料よりも融点が高い金属を意味し、１５００℃以上の融点であることは望ましい。またこの場合、導電性接合材料を省略することも可能であるが、製造製の観点からは導電性接合材料を用いたほうがより好ましい。 By providing the covering material in this manner, the bonding state can be ensured even when the electron source has a temperature equal to or higher than the melting point of the conductive bonding material. In this case, the refractory metal means a metal having a melting point higher than that of the conductive bonding material, and preferably has a melting point of 1500 ° C. or higher. In this case, the conductive bonding material can be omitted, but it is more preferable to use the conductive bonding material from the viewpoint of manufacturing.
この電子源は、実施例１に記載された方法により作成された電子源の接合部周辺に例えばガリウムイオンの代わりに電子線を利用するＦＩＢ加工装置等で像観察中のカーボンナノチューブ自体の照射ダメージを最小限にしながら接合部周辺のみにタングステンやカーボン等を蒸着することで作成できる。 In this electron source, the irradiation damage of the carbon nanotube itself during image observation with an FIB processing apparatus using an electron beam instead of gallium ions, for example, around the junction of the electron source prepared by the method described in Example 1 It can be created by depositing tungsten, carbon or the like only around the joints while minimizing the above.
なお本実施例では実施例１で作成された電子源を元として作成したが、上記効果を奏する限りにおいて実施例１により作成された電子源に限定されることはなく、実施例１乃至実施例４いずれに記載の電子源においても作成可能である。 In this embodiment, the electron source created in the first embodiment is used as a source. However, the electron source is not limited to the electron source created in the first embodiment as long as the above effect is obtained. 4. Any of the electron sources described in 4 can be created.
以上、カーボンナノチューブと導電性基材とのオーミックコンタクトが確保でき、十分な接合強度を有し、かつ電子源が低融点金属の融点以上の温度に曝されても接合状態の確保が可能な高信頼性の電子源を提供することができる。 As described above, an ohmic contact between the carbon nanotube and the conductive substrate can be secured, sufficient bonding strength can be ensured, and the bonding state can be secured even when the electron source is exposed to a temperature higher than the melting point of the low melting point metal. A reliable electron source can be provided.
（実施例６）
本実施例では実施例４及び実施例５において開示された電子源を用いた電子源の運転方法について図８（ａ）及び（ｂ）を用いて説明する。
(Example 6)
In this embodiment, an operation method of an electron source using the electron sources disclosed in
即ち、図８（ａ）に係る電子源は、Ｖ字部分（先端部分）に微細孔が設けられたＶ字型フィラメント形状の導電性基材と、微細孔に設けられる導電性針よりも低融点の導電性接合材料と、導電性接合材料に取付けられたカーボンナノチューブと、カーボンナノチューブと前記導電性接合材料との接合部周辺に前記導電性接合材料を封止するために設けられた被覆材と、を有して構成され、図８（ｂ）に係る電子源は、Ｖ字型のフィラメント形状を有する導電性基材と、Ｖ字型のフィラメント形状を有する導電性基材のＶ字部分（先端部分）に取付けられ、先端に微細孔を有する導電性針と、微細孔に設けられる導電性針よりも低融点の導電性接合材料と、導電性接合材料に取付けられたカーボンナノチューブと、導電性接合材料に取付けられたカーボンナノチューブと、カーボンナノチューブと前記導電性接合材料との接合部周辺に前記導電性接合材料を封止するために設けられた被覆材と、を有して構成される。これを用いてフラッシングフリーな運転方法が可能である。以下、具体的に説明する。 That is, the electron source according to FIG. 8A is lower than the V-shaped filament-shaped conductive base material having the V-shaped portion (tip portion) provided with the fine hole and the conductive needle provided in the fine hole. A conductive bonding material having a melting point, a carbon nanotube attached to the conductive bonding material, and a covering material provided to seal the conductive bonding material around a bonding portion between the carbon nanotube and the conductive bonding material The electron source according to FIG. 8B includes a conductive base material having a V-shaped filament shape and a V-shaped portion of the conductive base material having a V-shaped filament shape. A conductive needle attached to (tip portion) and having a fine hole at the tip; a conductive bonding material having a melting point lower than that of the conductive needle provided in the fine hole; and a carbon nanotube attached to the conductive bonding material; Attached to conductive bonding material Configured to include a carbon nanotube, and a coating material provided to seal the conductive bonding material around the joint between the carbon nanotube and the conductive bonding material. Using this, a flushing-free driving method is possible. This will be specifically described below.
この構成を有する電子源は、電子源が低融点である導電性接合材料以上の温度に曝されても接合状態を確保することができるため、例えばカーボンナノチューブから熱電子放出が起こる臨界温度をＴ1 、カーボンナノチューブ表面の吸着ガスが離脱する温度をＴ2 、カーボンナノチューブの加熱温度をＴとした場合、フィラメントへの電流量を調節することでＴ2 ＜Ｔ＜Ｔ1 として運転することにより従来の電界放出型電子源で必要な真空度よりもかなり低い真空度においても、従来必須となっていたフラッシングをしなくても長期間にわたって安定かつ狭エネルギー幅の電子ビームをえることが可能となる。特に現在、半導体関連で使用される測長ＳＥＭではフラッシングフリーであることが必須であったため電界放出型に比べ分解能の劣るショットキー型電子源がもっぱら使用されているが、本実施例に係る電子源を上記運転方法で実施することによりフラッシングフリーな高分解能観察が可能となる。 The electron source having this configuration can secure a bonding state even when the electron source is exposed to a temperature higher than that of the conductive bonding material having a low melting point. 1. When the temperature at which the adsorbed gas on the surface of the carbon nanotubes is desorbed is T 2 and the heating temperature of the carbon nanotube is T, the current amount to the filament is adjusted to operate as T 2 <T <T 1. Even in a vacuum level much lower than that required for the field emission electron source, it is possible to obtain an electron beam having a stable and narrow energy width over a long period of time without performing flushing, which has been essential in the past. . In particular, at present, the length measurement SEM used in the semiconductor-related field is required to be flushing-free, and therefore, a Schottky electron source having a lower resolution than that of the field emission type is exclusively used. By implementing the source by the above operation method, it is possible to perform high-resolution observation free of flushing.
（実施例７）
本実施例では実施例１に記載する電子源の製造方法についての他の一例を示す。但し、実施例１とは、導電性接合材料がグラファイト化した有機材料である点で相違する。
(Example 7)
In this embodiment, another example of the electron source manufacturing method described in
本実施例に係る電子源の製造方法は、例えば実施例１に記載された電子源を作成する方法であって、エッチング等で先端を尖らせた導電性針の先端中央部に、ＦＩＢ加工或いはフォトリソグラフ法等で微細孔を形成し、導電性の先端部に微細孔を有する導電性針に予め有機材料を塗布し、有機材料が塗布された微細孔に一本のカーボンナノチューブを挿入して仮止めを行い、これを真空中或いは不活性ガス雰囲気中で有機材料が炭化する温度まで加熱して有機材料をグラファイト化させる。つまりこの工程により有機材料は導電性を有するグラファイトとなるため、カーボンナノチューブと導電性針とがオーミックコンタクト接合した電子源を作成することができる。特にこの場合導電性針をカーボンとすれば、電子源を構成する材料が全てカーボンになるため、熱膨張差に起因する接合部での界面剥離或いは各材料間のぬれ性など異種材料接合に関わる問題が解決でき大変好都合となる。 The electron source manufacturing method according to the present embodiment is a method for producing the electron source described in the first embodiment, for example, in the central portion of the tip of the conductive needle whose tip is sharpened by etching or the like. A fine hole is formed by photolithography, etc., an organic material is applied in advance to a conductive needle having a fine hole at the conductive tip, and a single carbon nanotube is inserted into the fine hole coated with the organic material. Temporary fixing is performed, and this is heated to a temperature at which the organic material is carbonized in vacuum or in an inert gas atmosphere to graphitize the organic material. That is, since the organic material becomes conductive graphite by this process, an electron source in which the carbon nanotube and the conductive needle are joined in ohmic contact can be created. In particular, if the conductive needle is carbon in this case, the material constituting the electron source is all carbon, which is involved in interfacial debonding at the joint due to the difference in thermal expansion or wetting between different materials such as wettability between materials. The problem can be solved and it is very convenient.
なお、本実施例では実施例１に記載した電子源を元に説明したが、上記の製造工程が可能である限りにおいて、実施例２乃至実施例６に係る電子源の製造方法に応用することも可能である（その場合、微細孔は凹部とする等適宜読み替えることで対応できる）。 In addition, although the present Example demonstrated based on the electron source described in Example 1, it applies to the manufacturing method of the electron source which concerns on Example 2 thru | or Example 6 as long as said manufacturing process is possible. (In that case, it can be dealt with by appropriately replacing the micropores with recesses, etc.).
さらに、実施形態として図３に示すような先端中央部に微細孔が形成された導電性基材に、カーボンナノチューブをカーボンコンタミなどで仮止めした後、真空中あるいは不活性ガス中で加熱することにより、カーボンナノチューブと導電性基材とを拡散接合することができる。この場合導電性基材としてはカーボンナノチューブと炭化物などの中間生成物を形成しやすい金属が好ましい。また同時に、接合部のみにイオンや電子線などの粒子線照射を行えば、カーボンナノチューブと導電性基材間の拡散が促進されるため、より低温かつ短時間で拡散接合することができる。 Further, as an embodiment, after temporarily fixing carbon nanotubes with carbon contamination or the like on a conductive base material having a fine hole formed in the center of the tip as shown in FIG. 3, heating in a vacuum or an inert gas. Accordingly, the carbon nanotube and the conductive base material can be diffusion bonded. In this case, the conductive substrate is preferably a metal that easily forms an intermediate product such as carbon nanotube and carbide. At the same time, when the particle beam irradiation of ions, electron beams, or the like is performed only on the joint, diffusion between the carbon nanotube and the conductive base material is promoted, so that diffusion bonding can be performed at a lower temperature and in a shorter time.
（実施例８）
本実施例は実施例１に係る電子源を電子銃に用いた例である。図９（ａ）はその構成を示すものであり、図９（ｂ）は更にその電子銃を走査型顕微鏡に用いた例を示す。
(Example 8)
The present embodiment is an example in which the electron source according to the first embodiment is used for an electron gun. FIG. 9A shows the configuration, and FIG. 9B further shows an example in which the electron gun is used in a scanning microscope.
図９（ａ）に示される電子銃は、電子源と、電子源を支える支柱と、支柱を固定する絶縁基板と、第一陽極と、第二陽極と、を有して構成される。 The electron gun shown in FIG. 9A includes an electron source, a support column that supports the electron source, an insulating substrate that fixes the support column, a first anode, and a second anode.
図９（ｂ）に示される走査型顕微鏡は、電子銃から放出された電子ビームを電子レンズで縮小して、試料面上に微小な電子プローブを結像させるとともに、偏向器によって試料上の電子プローブの移動，走査を行うための電子光学系と試料室と、これらを真空に維持するための排気系から構成されている。なお、半導体プロセスにおける微細加工パターンの観察や寸法測長を行う測長ＳＥＭおよび電子線に感応するレジストを塗布した試料基板に電子ビームを照射して各種回路パターンを形成する電子線描画装置における電子光学系の構成も基本的には図８と同じである。 In the scanning microscope shown in FIG. 9B, the electron beam emitted from the electron gun is reduced by an electron lens to form an image of a minute electron probe on the sample surface, and the electron on the sample is deflected by a deflector. It comprises an electron optical system for moving and scanning the probe, a sample chamber, and an exhaust system for maintaining these in a vacuum. Electrons in an electron beam lithography system that forms various circuit patterns by irradiating an electron beam onto a sample substrate coated with a length-measuring SEM for observing a microfabricated pattern and measuring dimensions in a semiconductor process and a resist sensitive to an electron beam. The configuration of the optical system is basically the same as in FIG.
以上、実施例１に係る電界放出型電子源をこれら装置の電子銃に適用することにより、従来機種と比べて高分解能化，高輝度化，低加速電圧化による試料ダメージの低減化，低コスト化，小型化を実現する電子顕微鏡および高精細化，高効率化，低コスト化，小型化を実現する電子顕微鏡，電子線描画装置を実現することができる。 As described above, the field emission electron source according to the first embodiment is applied to the electron guns of these apparatuses, so that the sample damage can be reduced and the cost can be reduced due to higher resolution, higher brightness, and lower acceleration voltage than the conventional model. Electron microscope that realizes miniaturization and miniaturization, and an electron microscope and electron beam drawing apparatus that realize high definition, high efficiency, low cost, and miniaturization.
さらに、電子線描画装置に関しては、最近、金属−絶縁体−金属の三層構造からなる薄膜型電子源（ＭＩＭ）を格子状に二次元配列して作製したマルチ電子線源搭載型電子線描画装置が考案されている。これによりパターンを一括転写でき、電子源が一つの場合に比べて、スループットが大幅に改善することができる。しかし、この場合、ＭＩＭの電子放出しきい電界が１〜１０ＭＶ／cm以上と非常に高く、ＭＩＭを構成する絶縁体あるいは駆動回路部品の絶縁破壊などが生じるといった問題があり、低電圧で高電流密度を達成できる電子源が求められている。そこで、図１０に示すように本発明の電子源を搭載することにより、前記課題を解決することができる。 Furthermore, regarding an electron beam lithography system, a multi-electron beam source mounted electron beam lithography recently produced by two-dimensionally arranging a thin film electron source (MIM) having a metal-insulator-metal three-layer structure in a lattice shape. A device has been devised. As a result, the pattern can be collectively transferred, and the throughput can be greatly improved as compared with the case of one electron source. However, in this case, the electron emission threshold electric field of the MIM is very high as 1 to 10 MV / cm or more, and there is a problem that the dielectric breakdown of the insulator or the drive circuit component constituting the MIM occurs. There is a need for an electron source that can achieve the density. Therefore, the problem can be solved by mounting the electron source of the present invention as shown in FIG.
また、走査型電子顕微鏡と同様に電子源から放出された電子ビームを複数の電子レンズで細く絞り、この電子ビームを走査コイルを用いて矩形状に走査して像を得る走査透過電子顕微鏡や電子源から放出された電子ビームを加速し、複数段の電子レンズを通して試料に照射し、試料を透過した電子ビームを対物レンズを含む複数の電子レンズで拡大し、蛍光スクリーンに像を映し出す透過型電子顕微鏡においても電子光学系の基本原理は同じであるため、本発明の電子源を用いることにより同様の効果が得られる。 Similarly to a scanning electron microscope, an electron beam emitted from an electron source is narrowed down with a plurality of electron lenses, and this electron beam is scanned into a rectangular shape by using a scanning coil to obtain an image. The transmission electron that accelerates the electron beam emitted from the source, irradiates the sample through a multi-stage electron lens, expands the electron beam transmitted through the sample with a plurality of electron lenses including the objective lens, and displays an image on a fluorescent screen Since the basic principle of the electron optical system is the same in the microscope, the same effect can be obtained by using the electron source of the present invention.
１…カーボンナノチューブ、２…カーボンコンタミ、３…タングステン針、４…導電性接合材料、５…導電性針、６…導電性基材、７…導電性接合材料、８…第一の金属被覆層、９…第二の金属被覆層、１０…金属被覆層、１１…融点が１５００℃以上の導電性材料、１２…電子源、１３…支柱、１４…絶縁材料、１５…第一陽極、１６…第二陽極、１７…電子銃、１８…アライメントコイル、１９…コンデンサレンズ、２０…偏向，走査コイル、２１…対物レンズ、２２…二次電子検出器、２３…試料、２４…対物絞り、２５…試料ステージ、２６…排気系、２７…電子ビーム、２８…電極駆動回路、２９…ブランカ、３０…電子レンズ、３１…偏光器。
DESCRIPTION OF
Claims (20)
該導電性針の微細孔に設けられる導電性接合材料と、
前記導電性接合材料に接合されるカーボンナノチューブと、を有することを特徴とする電子源。 A conductive needle having micropores;
A conductive bonding material provided in the micropores of the conductive needle;
An electron source comprising: a carbon nanotube bonded to the conductive bonding material.
該被覆材と前記導電性針とで前記導電性接合材料を封止したことを特徴とする請求項１記載の電子源。 Having a covering,
The electron source according to claim 1, wherein the conductive bonding material is sealed with the covering material and the conductive needle.
前記導電性基材に接合される導電性接合材料と、
該導電性接合材料に接合されたカーボンナノチューブと、を有することを特徴とする請求項９記載の電子源。 The carbon nanotube in ohmic contact with the conductive substrate is
A conductive bonding material bonded to the conductive substrate;
The electron source according to claim 9, further comprising a carbon nanotube bonded to the conductive bonding material.
導電性基材に導電性接合材料を設ける工程と、
該導電性接合材料にカーボンナノチューブを挿入する工程と、
を有することを特徴とする請求項１５記載の電子源の製造方法。 The ohmic contact between the conductive substrate and the carbon nanotube is
Providing a conductive bonding material on the conductive substrate;
Inserting carbon nanotubes into the conductive bonding material;
The method of manufacturing an electron source according to claim 15, comprising:
前記導電性接合材料である金属を溶融し、
溶融した導電性接合材料にカーボンナノチューブを挿入し、
前記導電性接合材料である金属を冷却して固化する工程であることを特徴とする請求項１６記載の電子源の製造方法。 The step of inserting carbon nanotubes into the conductive bonding material,
Melting the metal which is the conductive bonding material,
Insert carbon nanotubes into the molten conductive bonding material,
The method of manufacturing an electron source according to claim 16, which is a step of cooling and solidifying the metal which is the conductive bonding material.
カーボンコンタミにより導電性基材にカーボンナノチューブを固定した後熱処理することにより、前記導電性基材と前記カーボンナノチューブとを拡散接合する工程であることを特徴とする請求項１５記載の電子源の製造方法。 The ohmic contact between the conductive substrate and the carbon nanotube is
16. The method of manufacturing an electron source according to claim 15, which is a step of diffusion-bonding the conductive base material and the carbon nanotube by fixing the carbon nanotube to the conductive base material by carbon contamination and then performing a heat treatment. Method.
An electron beam drawing apparatus using the electron source according to claim 1.
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