JP2006258965A - 液晶表示装置及びその製造方法 - Google Patents
液晶表示装置及びその製造方法 Download PDFInfo
- Publication number
- JP2006258965A JP2006258965A JP2005073631A JP2005073631A JP2006258965A JP 2006258965 A JP2006258965 A JP 2006258965A JP 2005073631 A JP2005073631 A JP 2005073631A JP 2005073631 A JP2005073631 A JP 2005073631A JP 2006258965 A JP2006258965 A JP 2006258965A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- liquid crystal
- substrate
- crystal display
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 230000004888 barrier function Effects 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims description 26
- 238000009751 slip forming Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 14
- 230000007797 corrosion Effects 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 8
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 89
- 239000010410 layer Substances 0.000 description 72
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000003993 interaction Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】下層配線(ゲート配線2)を、Cu層4の周囲をバリア金属膜3a、3bで被覆した構造とし、バリア金属膜3a、3bでCuとSiとの接触を防止し、耐薬品性、耐腐食性及び密着性を向上させる。また、予め透明絶縁基板1に溝12を形成し、その中に上記構造の下層配線を埋設することにより、下層配線の段差に起因するディスクリネーション不良や上層配線の断線不良の発生を抑制する。これによりAlよりも抵抗の小さいCuを使用可能とし、下層配線を厚く形成できるため、大型、高密度かつ開口率の大きい液晶表示装置の表示品位を向上させることができる。
【選択図】図2
Description
2 ゲート配線
2a ゲート遮光膜
3a 下層バリア金属膜
3b 上層バリア金属膜
4 Cu層
5 ゲート絶縁膜
6 a−Si膜
7 n+a−Si膜
8 ドレイン金属層
8a ソース電極
8b ドレイン配線
9 パッシベーション膜
10 画素電極
11 コンタクトホール
12 溝
13 レジスト
Claims (6)
- 互いに略直交する方向に延在する下層側の第1の配線及び上層側の第2の配線と、前記第1の配線と前記第2の配線との交点近傍に配設されるスイッチング素子と、前記第1の配線と前記第2の配線とで囲まれる各々の画素領域内に形成される画素電極とを少なくとも備える液晶表示装置用基板において、
前記第1の配線は、透明絶縁基板に予め形成された溝に埋設された、Cu層とその周囲を覆うバリア金属膜とで構成されることを特徴とする液晶表示装置用基板。 - 互いに略直交する方向に延在する下層側の第1の配線及び上層側の第2の配線と、前記第1の配線と前記第2の配線との交点近傍に配設されるスイッチング素子と、前記第1の配線と前記第2の配線とで囲まれる各々の画素領域内に形成される画素電極と、前記第2の配線と前記画素電極との間の領域の一部を含むように形成される前記第1の配線と同層の遮光膜とを少なくとも備える液晶表示装置用基板において、
前記第1の配線及び前記遮光膜は、透明絶縁基板に予め形成された溝に埋設された、Cu層とその周囲を覆うバリア金属膜とで構成されることを特徴とする液晶表示装置用基板。 - 前記バリア金属膜は、前記溝の底部及び側壁に配設された第1のバリア金属膜と、前記溝の上部に配設された第2のバリア金属膜とで構成されることを特徴とする請求項1又は2に記載の液晶表示装置用基板。
- 互いに略直交する方向に延在する下層側の第1の配線及び上層側の第2の配線と、前記第1の配線と前記第2の配線との交点近傍に配設されるスイッチング素子と、前記第1の配線と前記第2の配線とで囲まれる各々の画素領域内に形成される画素電極とを少なくとも備える液晶表示装置用基板の製造方法であって、
前記第1の配線を、
透明絶縁性基板の前記第1の配線を形成する領域に溝を形成する工程と、
前記溝の底部及び側壁に第1のバリア金属膜を形成する工程と、
前記第1のバリア膜で囲まれた領域にCu層を形成する工程と、
前記溝の上部に第2のバリア金属膜を形成する工程と、により形成することを特徴とする液晶表示装置用基板の製造方法。 - 互いに略直交する方向に延在する下層側の第1の配線及び上層側の第2の配線と、前記第1の配線と前記第2の配線との交点近傍に配設されるスイッチング素子と、前記第1の配線と前記第2の配線とで囲まれる各々の画素領域内に形成される画素電極とを少なくとも備える液晶表示装置用基板の製造方法であって、
前記第1の配線を、
透明絶縁性基板の前記第1の配線を形成する領域に溝を形成する工程と、
第1のバリア膜とCu層とを連続して成膜し、前記溝の底部及び側壁に第1のバリア金属膜を形成すると共に前記第1のバリア膜で囲まれた領域にCu層を形成する工程と、
前記溝の上部に第2のバリア金属膜を形成する工程と、により形成することを特徴とする液晶表示装置用基板の製造方法。 - 前記第1の配線を形成する際に、
前記透明絶縁性基板の前記第2の配線を形成する領域と前記画素電極を形成する領域との間の一部を含む領域に前記溝を形成し、該溝に前記第1の配線と同じ構造の遮光膜を形成することを特徴とする請求項4又は5に記載の液晶表示装置用基板の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005073631A JP4543385B2 (ja) | 2005-03-15 | 2005-03-15 | 液晶表示装置の製造方法 |
TW095106623A TW200632496A (en) | 2005-03-15 | 2006-02-27 | Liquid crystal display device and manufacturing method of the same |
KR1020060023072A KR100823061B1 (ko) | 2005-03-15 | 2006-03-13 | 액정 디스플레이 장치 및 그 제조 방법 |
US11/375,112 US7564531B2 (en) | 2005-03-15 | 2006-03-15 | LCD device and method including a plastic substrate with metal layer containing copper surrounded by barrier metal film embedded in a groove within the plastic substrate |
CNB2006100591416A CN100412629C (zh) | 2005-03-15 | 2006-03-15 | 液晶显示设备及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005073631A JP4543385B2 (ja) | 2005-03-15 | 2005-03-15 | 液晶表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006258965A true JP2006258965A (ja) | 2006-09-28 |
JP4543385B2 JP4543385B2 (ja) | 2010-09-15 |
Family
ID=37002551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005073631A Expired - Fee Related JP4543385B2 (ja) | 2005-03-15 | 2005-03-15 | 液晶表示装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7564531B2 (ja) |
JP (1) | JP4543385B2 (ja) |
KR (1) | KR100823061B1 (ja) |
CN (1) | CN100412629C (ja) |
TW (1) | TW200632496A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009124152A (ja) * | 2007-11-14 | 2009-06-04 | Samsung Electronics Co Ltd | アレイ基板及びこれの製造方法 |
WO2011080987A1 (ja) * | 2009-12-29 | 2011-07-07 | シャープ株式会社 | 液晶パネル用アレイ基板と該基板を備える液晶表示装置 |
WO2012090432A1 (ja) * | 2010-12-27 | 2012-07-05 | シャープ株式会社 | アクティブマトリクス基板及びその製造方法、並びに表示パネル |
JP2012215907A (ja) * | 2009-02-10 | 2012-11-08 | Sharp Corp | 接続端子及び該接続端子を備えた表示装置 |
JP2013038349A (ja) * | 2011-08-10 | 2013-02-21 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI305682B (en) | 2006-08-14 | 2009-01-21 | Au Optronics Corp | Bottom substrate for liquid crystal display device and the method of making the same |
JP2008103653A (ja) * | 2006-09-22 | 2008-05-01 | Tohoku Univ | 半導体装置及び半導体装置の製造方法 |
JP5207163B2 (ja) * | 2007-03-30 | 2013-06-12 | Nltテクノロジー株式会社 | 埋込配線の形成方法、表示装置用基板及び当該基板を有する表示装置 |
KR100857689B1 (ko) | 2007-05-23 | 2008-09-08 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 |
KR100857690B1 (ko) | 2007-05-30 | 2008-09-08 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 |
TWI380452B (en) * | 2008-03-27 | 2012-12-21 | Au Optronics Corp | Thin film transistor, active array substrate and method for manufacturing the same |
CN101661202B (zh) * | 2008-04-07 | 2011-05-04 | 友达光电股份有限公司 | 主动阵列基板 |
KR101574131B1 (ko) * | 2009-11-10 | 2015-12-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
KR101242033B1 (ko) * | 2010-05-05 | 2013-03-11 | 엘지디스플레이 주식회사 | 액정표시장치 및 이의 제조방법 |
US9030728B2 (en) | 2011-03-25 | 2015-05-12 | Hewlett-Packard Development Company, L.P. | Reflective display |
CN102306652B (zh) * | 2011-09-19 | 2014-10-22 | 深圳莱宝高科技股份有限公司 | 一种阵列基板及其制作方法、使用该阵列基板的显示面板 |
TWI538140B (zh) * | 2011-12-16 | 2016-06-11 | 元太科技工業股份有限公司 | 立體線路結構與半導體元件 |
US9144328B2 (en) | 2012-11-05 | 2015-09-29 | Whirlpool Corporation | Interactive transparent touch screen doors for wine cabinets |
US10157316B2 (en) | 2012-11-05 | 2018-12-18 | Whirlpool Corporation | Interactive touch screen device for wine |
CN103176650B (zh) * | 2013-03-01 | 2016-09-28 | 南昌欧菲光科技有限公司 | 导电玻璃基板及其制作方法 |
CN103646924B (zh) * | 2013-12-04 | 2016-02-10 | 京东方科技集团股份有限公司 | 薄膜晶体管阵列基板及其制备方法、显示装置 |
KR20160028587A (ko) * | 2014-09-03 | 2016-03-14 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판과 이의 제조 방법 및 이를 포함하는 액정 표시 장치 |
CN104460146A (zh) * | 2014-11-13 | 2015-03-25 | 深圳市华星光电技术有限公司 | Boa型液晶面板及其制作方法 |
CN104795400B (zh) * | 2015-02-12 | 2018-10-30 | 合肥鑫晟光电科技有限公司 | 阵列基板制造方法、阵列基板和显示装置 |
CN104950541B (zh) * | 2015-07-20 | 2018-05-01 | 深圳市华星光电技术有限公司 | Boa型液晶显示面板及其制作方法 |
CN105093752A (zh) * | 2015-08-18 | 2015-11-25 | 深圳市华星光电技术有限公司 | 液晶面板 |
CN105047568B (zh) * | 2015-09-07 | 2018-01-09 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示面板 |
CN105552025A (zh) * | 2016-01-29 | 2016-05-04 | 武汉华星光电技术有限公司 | 液晶显示面板、tft基板及其制造方法 |
WO2017166167A1 (zh) * | 2016-03-31 | 2017-10-05 | 华为技术有限公司 | 场效应管及其制造方法 |
TWI646691B (zh) * | 2017-11-22 | 2019-01-01 | 友達光電股份有限公司 | 主動元件基板及其製造方法 |
CN107942595B (zh) * | 2017-12-21 | 2024-03-29 | 惠科股份有限公司 | 阵列基板及其制造方法、液晶显示面板及其制造方法 |
JP6690671B2 (ja) * | 2018-06-20 | 2020-04-28 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
CN109390414B (zh) * | 2018-11-14 | 2022-04-15 | 成都中电熊猫显示科技有限公司 | 一种薄膜晶体管、阵列基板以及显示面板 |
CN110211874B (zh) * | 2019-05-13 | 2021-07-23 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管的制备方法及薄膜晶体管 |
JP7505184B2 (ja) * | 2019-12-16 | 2024-06-25 | セイコーエプソン株式会社 | 電気光学装置、および電子機器 |
CN113009733B (zh) * | 2019-12-20 | 2023-06-20 | 京东方科技集团股份有限公司 | 像素结构及其制备方法、显示装置 |
CN111415994B (zh) * | 2020-03-16 | 2024-01-19 | 中国科学院微电子研究所 | 一种薄膜晶体管及其制作方法 |
CN114815426A (zh) * | 2022-05-10 | 2022-07-29 | 广州华星光电半导体显示技术有限公司 | 阵列基板及显示面板 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05114613A (ja) * | 1991-10-23 | 1993-05-07 | Kyocera Corp | アクテイブマトリツクス基板およびその製造方法 |
JP2000164875A (ja) * | 1998-11-26 | 2000-06-16 | Nec Corp | 液晶表示装置用薄膜トランジスタ基板およびその製造方法 |
JP2002093747A (ja) * | 2000-09-19 | 2002-03-29 | Sony Corp | 導体構造の形成方法及び導体構造、並びに半導体装置の製造方法及び半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05181148A (ja) * | 1991-12-27 | 1993-07-23 | Sharp Corp | 液晶表示装置 |
JPH09274195A (ja) * | 1996-04-04 | 1997-10-21 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
US6008877A (en) * | 1996-11-28 | 1999-12-28 | Sharp Kabushiki Kaisha | Liquid crystal display having multilayered electrodes with a layer adhesive to a substrate formed of indium tin oxide |
US5892558A (en) * | 1997-06-26 | 1999-04-06 | Gl Displays, Inc. | Wire electrode structure based on 2 or 3 terminal device employed in a liquid crystal display |
JP2000105386A (ja) * | 1998-07-31 | 2000-04-11 | Sharp Corp | 液晶表示装置およびその製造方法 |
KR100328126B1 (ko) * | 1998-11-26 | 2002-08-14 | 한국전자통신연구원 | 트렌치게이트구조를갖는다결정실리콘박막트랜지스터의제조방법 |
JP3332005B2 (ja) * | 1999-04-06 | 2002-10-07 | 日本電気株式会社 | 半導体装置の製造方法 |
KR20010046141A (ko) * | 1999-11-10 | 2001-06-05 | 구본준 | 박막 트랜지스터 및 배선 제조방법 |
TW490718B (en) * | 2000-01-25 | 2002-06-11 | Toshiba Corp | Semiconductor device and the manufacturing method thereof |
KR100396696B1 (ko) * | 2000-11-13 | 2003-09-02 | 엘지.필립스 엘시디 주식회사 | 저저항 배선을 갖는 액정 디스플레이 패널 |
JP2003243499A (ja) * | 2002-02-15 | 2003-08-29 | Sony Corp | 半導体装置及びその製造方法 |
JP3992654B2 (ja) * | 2003-06-26 | 2007-10-17 | 沖電気工業株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-03-15 JP JP2005073631A patent/JP4543385B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-27 TW TW095106623A patent/TW200632496A/zh unknown
- 2006-03-13 KR KR1020060023072A patent/KR100823061B1/ko not_active IP Right Cessation
- 2006-03-15 CN CNB2006100591416A patent/CN100412629C/zh not_active Expired - Fee Related
- 2006-03-15 US US11/375,112 patent/US7564531B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05114613A (ja) * | 1991-10-23 | 1993-05-07 | Kyocera Corp | アクテイブマトリツクス基板およびその製造方法 |
JP2000164875A (ja) * | 1998-11-26 | 2000-06-16 | Nec Corp | 液晶表示装置用薄膜トランジスタ基板およびその製造方法 |
JP2002093747A (ja) * | 2000-09-19 | 2002-03-29 | Sony Corp | 導体構造の形成方法及び導体構造、並びに半導体装置の製造方法及び半導体装置 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009124152A (ja) * | 2007-11-14 | 2009-06-04 | Samsung Electronics Co Ltd | アレイ基板及びこれの製造方法 |
JP2012215907A (ja) * | 2009-02-10 | 2012-11-08 | Sharp Corp | 接続端子及び該接続端子を備えた表示装置 |
WO2011080987A1 (ja) * | 2009-12-29 | 2011-07-07 | シャープ株式会社 | 液晶パネル用アレイ基板と該基板を備える液晶表示装置 |
WO2012090432A1 (ja) * | 2010-12-27 | 2012-07-05 | シャープ株式会社 | アクティブマトリクス基板及びその製造方法、並びに表示パネル |
JP5347071B2 (ja) * | 2010-12-27 | 2013-11-20 | シャープ株式会社 | アクティブマトリクス基板の製造方法及びその方法により製造されたアクティブマトリクス基板、並びに表示パネル |
KR20130140814A (ko) * | 2010-12-27 | 2013-12-24 | 샤프 가부시키가이샤 | 액티브 매트릭스 기판 및 그 제조방법, 그리고 표시패널 |
US9087749B2 (en) | 2010-12-27 | 2015-07-21 | Sharp Kabushiki Kaisha | Active matrix substrate, and display panel |
KR101637636B1 (ko) * | 2010-12-27 | 2016-07-07 | 샤프 가부시키가이샤 | 액티브 매트릭스 기판 및 그 제조방법, 그리고 표시패널 |
JP2013038349A (ja) * | 2011-08-10 | 2013-02-21 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1834740A (zh) | 2006-09-20 |
TW200632496A (en) | 2006-09-16 |
KR100823061B1 (ko) | 2008-04-18 |
KR20060101265A (ko) | 2006-09-22 |
US20060209222A1 (en) | 2006-09-21 |
JP4543385B2 (ja) | 2010-09-15 |
US7564531B2 (en) | 2009-07-21 |
CN100412629C (zh) | 2008-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4543385B2 (ja) | 液晶表示装置の製造方法 | |
JP4718433B2 (ja) | 横電界方式の液晶表示装置用アレイ基板とその製造方法 | |
KR101434452B1 (ko) | 표시장치용 어레이 기판 및 그의 제조방법 | |
US9001299B2 (en) | Low resistance wiring structure and liquid crystal display device using the same | |
US8610871B2 (en) | Method for forming multilayer structure, method for manufacturing display panel, and display panel | |
US7514712B2 (en) | Electro-optic display and connection between drain electrode and pixel electrode | |
US5981972A (en) | Actived matrix substrate having a transistor with multi-layered ohmic contact | |
US20070058097A1 (en) | Liquid crystal display device and method for manufacturing the same | |
KR102374749B1 (ko) | 저 저항 배선 구조를 갖는 초고밀도 박막 트랜지스터 기판 및 그 제조 방법 | |
US20100245735A1 (en) | Array substrate and manufacturing method thereof | |
US7947985B2 (en) | Thin film transistor array substrate and manufacturing method thereof | |
KR20070006223A (ko) | 박막 트랜지스터 표시판 | |
JP6501514B2 (ja) | 薄膜トランジスタ基板およびその製造方法 | |
JP2007114360A (ja) | 薄膜トランジスタを備えた液晶表示装置及びその製造方法 | |
KR101015459B1 (ko) | 박막트랜지스터 어레이 기판의 제조 방법 및 표시장치 | |
KR20160128518A (ko) | 표시장치 및 그 제조방법 | |
US8304772B2 (en) | Thin-film transistor array panel and method of fabricating the same | |
KR100660809B1 (ko) | 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치 | |
KR101085450B1 (ko) | 박막트랜지스터 기판과 그 제조방법 | |
JP2001092378A (ja) | アクティブマトリクス基板 | |
US6861671B2 (en) | Thin film transistor liquid crystal display and fabrication method thereof | |
JP2006126255A (ja) | 電気光学装置、液晶表示装置及びそれらの製造方法 | |
WO2018163944A1 (ja) | 半導体装置、半導体装置の製造方法、及び、液晶表示装置 | |
JP3265862B2 (ja) | 液晶表示装置とその製造方法 | |
KR20040026859A (ko) | 액정표시장치용 어레이기판과 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070410 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091201 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100201 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100317 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100604 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100617 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130709 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130709 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130709 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |