JP2006245229A - 磁気検出素子及びその製造方法 - Google Patents
磁気検出素子及びその製造方法 Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 294
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 139
- 239000000956 alloy Substances 0.000 claims abstract description 139
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims abstract description 94
- 239000000463 material Substances 0.000 claims abstract description 58
- 239000000203 mixture Substances 0.000 claims description 86
- 229910003321 CoFe Inorganic materials 0.000 claims description 35
- 238000009792 diffusion process Methods 0.000 claims description 31
- 230000005415 magnetization Effects 0.000 claims description 29
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 28
- 238000001514 detection method Methods 0.000 claims description 25
- 230000007423 decrease Effects 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 20
- 230000001629 suppression Effects 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 229910052735 hafnium Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- 229910052726 zirconium Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 239000000696 magnetic material Substances 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 2
- 230000002829 reductive effect Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 465
- 239000010408 film Substances 0.000 description 79
- 239000010949 copper Substances 0.000 description 72
- 239000010409 thin film Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 10
- 230000009977 dual effect Effects 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 5
- 229910002546 FeCo Inorganic materials 0.000 description 4
- 239000002885 antiferromagnetic material Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005293 ferrimagnetic effect Effects 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000001603 reducing effect Effects 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052702 rhenium Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910019233 CoFeNi Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 229910017060 Fe Cr Inorganic materials 0.000 description 1
- 229910002544 Fe-Cr Inorganic materials 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- DTJAVSFDAWLDHQ-UHFFFAOYSA-N [Cr].[Co].[Pt] Chemical compound [Cr].[Co].[Pt] DTJAVSFDAWLDHQ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005316 antiferromagnetic exchange Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 1
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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Abstract
【解決手段】 前記フリー磁性層6にNiFeX合金層6bを形成する。前記元素Xは例えばCuである。前記フリー磁性層6に前記NiFeX合金層6bを形成することで、前記NiFeX合金層6bが形成された領域をNiFe合金で形成する場合に比べて、高ΔRAを維持しつつフリー磁性層6の磁歪を低減することが可能になる。
【選択図】図1
Description
磁化方向が固定される固定磁性層と、前記固定磁性層に非磁性材料層を介して形成され、外部磁界により磁化方向が変動するフリー磁性層、を有する磁気検出素子において、
前記フリー磁性層の少なくとも一部は、NiFeX(元素Xは、Cu,Sc,Ti,Zn,Zr,Hf,Au,Ag,Mn,Alから選ばれる一種または二種以上の元素)合金層で形成され、
前記元素Xの平均組成比は、5原子%以上で20原子%以下の範囲内であることを特徴とするものである。
また本発明では、前記フリー磁性層は、NiFeX合金層の上下に、磁性材料の拡散抑制層が形成された積層構造であり、前記拡散防止層が前記非磁性材料層との界面に接して形成されていることが好ましく、具体的には、前記拡散抑制層はCoFe合金で形成されることが好ましい。これにより前記NiFeX合金層が前記非磁性材料層に拡散することを適切に抑制することが出来る。
磁化方向が固定される固定磁性層と、前記固定磁性層に非磁性材料層を介して形成され、外部磁界により磁化方向が変動するフリー磁性層、を有する磁気検出素子の製造方法において、
前記フリー磁性層の少なくとも一部を、NiFeX(元素Xは、Cu,Sc,Ti,Zn,Zr,Hf,Au,Ag,Mn,Alから選ばれる一種または二種以上の元素)合金層で形成し、
前記元素Xの平均組成比を、5原子%以上で20原子%以下の範囲内とすることを特徴とするものである。これにより、ΔRAを高い値に維持しつつ磁歪も低減できる磁気検出素子を容易に製造することが出来る。
前記フリー磁性層6は、NiFeX合金層6bのみで構成されていてもよい。
基本膜構成は、下地層1;Ta(30)/シード層2;NiFeCr(50)/下側反強磁性層3;IrMn(70)/下側固定磁性層4[第1磁性層4a;FeCo(30)/非磁性中間層4b;Ru(9.1)/非磁性中間層側磁性層4c2;FeCo(10)/非磁性材料層側磁性層4c1;CoMnGe(40)/非磁性材料層5;Cu(43)/フリー磁性層6/非磁性材料層7;Cu(43)/上側固定磁性層8[非磁性材料層側磁性層8c1;CoMnGe(40)/非磁性中間層側磁性層8c2;FeCo(10)/非磁性中間層8b;Ru(9.1)/第1固定磁性層8a;FeCo(30)]/上側反強磁性層9;IrMn(70)/保護層10;Ta(200)であった。なお括弧内の数値は膜厚を示し単位はÅである。
CoFe(5)/[NiFe(8)]×8/CoFe(5)
CoFe(5)/[Cu(1)/NiFe(8)]×8/Cu(1)/CoFe(5)
CoFe(5)/[Cu(2)/NiFe(8)]×8/Cu(2)/CoFe(5)
次に、各サンプルの上記基本構成を積層したときの(熱処理前)、フリー磁性層6中に形成された個々のCu膜厚と、熱処理後において測定したΔRAとの関係を調べた。その実験結果を図9に示す。
次に、各サンプルの上記基本構成を積層したときの(熱処理前)、NiFe合金中に占めるNi組成比と、熱処理後において測定したΔRAとの関係を調べた。その実験結果を図11に示す。また図11には、フリー磁性層6をCuとNiFe合金層とのラミネート構成で形成しない場合、すなわちフリー磁性層6をCoFe(5)/NiFe(8)×8/CoFe(5)の積層構成で形成し、NiFe合金中に占めるNi組成比を上記サンプルと同じように変化させたときのΔRA(比較例)も載せてある。
CoFe(5)/[NiFe(8)]×8/CoFe(5)
CoFe(5)/[Cu(1)/NiFe(8)]×8/Cu(1)/CoFe(5)
CoFe(5)/[Cu(2)/NiFe(8)]×8/Cu(2)/CoFe(5)
CoFe(5)/[Cu(0.5)/NiFe(4)]×16/Cu(0.5)/CoFe(5)
CoFe(5)/[Cu(1)/NiFe(4)]×16/Cu(1)/CoFe(5)
CoFe(5)/[Cu(1)/NiFe(8)]×12/Cu(1)/CoFe(5)
2 シード層
3、9 反強磁性層
4、8 固定磁性層
5、7 非磁性材料層
6 フリー磁性層
6a、6b 拡散抑制層
6b NiFeX合金層
10 保護層
40 元素X層
41 NiFe合金層
Claims (18)
- 磁化方向が固定される固定磁性層と、前記固定磁性層に非磁性材料層を介して形成され、外部磁界により磁化方向が変動するフリー磁性層、を有する磁気検出素子において、
前記フリー磁性層の少なくとも一部は、NiFeX(元素Xは、Cu,Sc,Ti,Zn,Zr,Hf,Au,Ag,Mn,Alから選ばれる一種または二種以上の元素)合金層で形成され、
前記元素Xの平均組成比は、5原子%以上で20原子%以下の範囲内であることを特徴とする磁気検出素子。 - 前記元素Xは、前記NiFeX合金層の下面から上面にわたって拡散されている請求項1記載の磁気検出素子。
- 前記NiFeX合金層の下面から上面に向けて、元素Xの組成比が増加する領域と、減少する領域とが交互に現われる請求項1記載の磁気検出素子。
- [Niの平均組成比/(Niの平均組成比+Feの平均組成比)]×100は、60以上で80以下の範囲内である請求項1ないし3のいずれかに記載の磁気検出素子。
- 元素XはCuである請求項1ないし4のいずれかに記載の磁気検出素子。
- 前記フリー磁性層は、NiFeX合金層の上下に、磁性材料の拡散抑制層が形成された積層構造であり、前記拡散防止層が前記非磁性材料層との界面に接して形成されている請求項1ないし5のいずれかに記載の磁気検出素子。
- 前記拡散抑制層はCoFe合金で形成される請求項6記載の磁気検出素子。
- 反強磁性層と、この反強磁性層と接して形成され、前記反強磁性層との交換異方性磁界により磁化方向が固定される前記固定磁性層と、前記固定磁性層に前記非磁性材料層を介して形成された前記フリー磁性層とを有する請求項1ないし7のいずれかに記載の磁気検出素子。
- 前記フリー磁性層の上下に積層された非磁性材料層と、一方の前記非磁性材料層の上および他方の前記非磁性材料層の下に位置する前記固定磁性層を有する請求項1ないし7のいずれかに記載の磁気検出素子。
- 一方の前記固定磁性層の上および他方の前記固定磁性層の下に位置して、交換異方性磁界によりそれぞれの前記固定磁性層の磁化方向を一定の方向に固定する反強磁性層を有する請求項9記載の磁気検出素子。
- 前記固定磁性層、非磁性材料層、及びフリー磁性層の膜面に対して垂直方向にセンス電流が流される請求項1ないし10のいずれかに記載の磁気検出素子。
- 磁化方向が固定される固定磁性層と、前記固定磁性層に非磁性材料層を介して形成され、外部磁界により磁化方向が変動するフリー磁性層、を有する磁気検出素子の製造方法において、
前記フリー磁性層の少なくとも一部を、NiFeX(元素Xは、Cu,Sc,Ti,Zn,Zr,Hf,Au,Ag,Mn,Alから選ばれる一種または二種以上の元素)合金層で形成し、
前記元素Xの平均組成比を、5原子%以上で20原子%以下の範囲内とすることを特徴とする磁気検出素子の製造方法。 - 前記NiFeX合金層を、NiFe合金層と、元素Xからなる元素X層とを交互に積層して形成する請求項12記載の磁気検出素子の製造方法。
- 前記元素X層とNiFe合金層とを一回ずつ積層した積層構成を一単位とし、この一単位に占める前記元素X層の膜厚比率を、[元素X層の膜厚/(NiFe合金層の膜厚+元素X層の膜厚)と表したとき、前記元素X層の膜厚比率を、5〜20の範囲内とする請求項13記載の磁気検出素子の製造方法。
- 個々の前記元素X層の膜厚を、0Åよりも大きく5Å以下の範囲内とする請求項12ないし14のいずれかに記載の磁気検出素子の製造方法。
- 個々の前記NiFe合金層の膜厚を、5Å以上で10Å以下の範囲内とする請求項12ないし15のいずれかに記載の磁気検出素子の製造方法。
- 個々の前記NiFe合金層のNiの平均組成比を、60原子%以上で80原子%以下の範囲内とする請求項12ないし16のいずれかに記載の磁気検出素子の製造方法。
- 前記磁気検出素子を形成したのち、前記磁気検出素子に対し熱処理を施す請求項12ないし17のいずれかに記載の磁気検出素子の製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008034857A (ja) * | 2006-07-31 | 2008-02-14 | Magic Technologies Inc | 磁気トンネル接合素子およびその形成方法 |
JP2008103728A (ja) * | 2006-10-17 | 2008-05-01 | Magic Technologies Inc | 磁気トンネル接合素子およびその製造方法 |
DE112007002127T5 (de) | 2006-09-11 | 2009-07-23 | Panasonic Corp., Kadoma | System zum Montieren elektronischer Bauteile und Verfahren zum Montieren elektronischer Bauteile |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6778358B1 (en) | 2002-05-01 | 2004-08-17 | Western Digital (Fremont), Inc. | Magnetically soft, high saturation magnetization laminates of iron-cobalt-nitrogen and iron-nickel |
US7522377B1 (en) * | 2002-05-01 | 2009-04-21 | Western Digital (Fremont), Llc | Magnetic write head with high moment magnetic thin film formed over seed layer |
JP2007088415A (ja) * | 2005-08-25 | 2007-04-05 | Fujitsu Ltd | 磁気抵抗効果素子、磁気ヘッド、磁気記憶装置、および磁気メモリ装置 |
JP2007273504A (ja) * | 2006-03-30 | 2007-10-18 | Fujitsu Ltd | 磁気抵抗効果素子、磁気ヘッド、磁気記録装置、磁気ランダムアクセスメモリ |
US8786036B2 (en) * | 2011-01-19 | 2014-07-22 | Headway Technologies, Inc. | Magnetic tunnel junction for MRAM applications |
JP5869405B2 (ja) * | 2012-03-30 | 2016-02-24 | アルプス電気株式会社 | 磁気検出素子及びそれを用いた磁気センサ |
US10573447B2 (en) * | 2015-03-31 | 2020-02-25 | Panasonic Intellectual Property Management Co., Ltd. | Thin film magnet and method for manufacturing thin film magnet |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US6767655B2 (en) | 2000-08-21 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistive element |
JP4024499B2 (ja) * | 2001-08-15 | 2007-12-19 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
JP3908557B2 (ja) * | 2001-10-09 | 2007-04-25 | アルプス電気株式会社 | 磁気検出素子の製造方法 |
JP2003298139A (ja) * | 2002-03-29 | 2003-10-17 | Alps Electric Co Ltd | 磁気検出素子 |
JP2004031545A (ja) | 2002-06-25 | 2004-01-29 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
JP2004095584A (ja) | 2002-08-29 | 2004-03-25 | Alps Electric Co Ltd | 磁気検出素子 |
JP2004095587A (ja) | 2002-08-29 | 2004-03-25 | Alps Electric Co Ltd | 磁気検出素子 |
US6998150B2 (en) | 2003-03-12 | 2006-02-14 | Headway Technologies, Inc. | Method of adjusting CoFe free layer magnetostriction |
US7230802B2 (en) * | 2003-11-12 | 2007-06-12 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device |
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JP2008034857A (ja) * | 2006-07-31 | 2008-02-14 | Magic Technologies Inc | 磁気トンネル接合素子およびその形成方法 |
DE112007002127T5 (de) | 2006-09-11 | 2009-07-23 | Panasonic Corp., Kadoma | System zum Montieren elektronischer Bauteile und Verfahren zum Montieren elektronischer Bauteile |
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