JP2006152415A - Plating apparatus and plating method - Google Patents

Plating apparatus and plating method Download PDF

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Publication number
JP2006152415A
JP2006152415A JP2004348248A JP2004348248A JP2006152415A JP 2006152415 A JP2006152415 A JP 2006152415A JP 2004348248 A JP2004348248 A JP 2004348248A JP 2004348248 A JP2004348248 A JP 2004348248A JP 2006152415 A JP2006152415 A JP 2006152415A
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plating
plating solution
plated
anode
substrate
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Nobutoshi Saito
信利 齋藤
Junichiro Yoshioka
潤一郎 吉岡
Fumio Kuriyama
文夫 栗山
Masunobu Onozawa
益信 小野澤
Takeshi Sahoda
毅 佐保田
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Ebara Corp
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Ebara Corp
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Priority to JP2004348248A priority Critical patent/JP2006152415A/en
Priority to US11/251,799 priority patent/US20060081478A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plating apparatus and a plating method which, with a relatively simple construction, can surely fill in via holes or the like with a metal film without the formation of voids in the embedded metal film even when the via holes or the like have a high aspect ratio and a deep depth. <P>SOLUTION: The plating apparatus comprises:a plating tank 186 for holding a plating solution 188; a holder 160 for holding an object W to be plated, feeding electricity to the object to be plated, and bringing a surface to be plated of the object to be plated into contact with the plating solution in the plating tank; an anode 214 disposed in the plating solution in the plating tank; a plating solution stirring section 220, 224, disposed between the anode and the object to be plated held by the holder, for stirring the plating solution in the plating tank; and a plating power source 230 for periodically applying a voltage between the object to be plated and the anode; wherein the plating solution is stirred by the plating solution stirring section when no voltage is applied between the object to be plated and the anode, whereas the stirring of the plating solution by the plating solution stirring section is stopped when the voltage is applied between the object to be plated and the anode. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、例えば基板の表面（被めっき面）にめっきを施すめっき装置及びめっき方法、特に半導体ウェーハ等の表面に設けられた微細なトレンチやビアホール等の配線用凹部に銅や銀等の導電体（配線材料）を埋込んで埋込み配線を形成するのに使用されるめっき装置及びめっき方法に関する。
本発明のめっき装置及びめっき方法は、例えば内部に上下に貫通する多数のビアプラグを有し、半導体チップ等のいわゆる３次元実装に使用されるインタポーザまたはスペーサを製造する際におけるビアの埋込みにも使用される。 The present invention relates to, for example, a plating apparatus and a plating method for plating on the surface (surface to be plated) of a substrate, in particular, a conductive portion such as copper or silver in a wiring recess such as a fine trench or a via hole provided on the surface of a semiconductor wafer or the like. The present invention relates to a plating apparatus and a plating method used for embedding a body (wiring material) to form a buried wiring.
The plating apparatus and plating method of the present invention have, for example, a large number of via plugs penetrating vertically inside and are also used for embedding vias when manufacturing interposers or spacers used for so-called three-dimensional mounting of semiconductor chips and the like. Is done.

近年、半導体基板上に配線回路を形成するための金属材料として、アルミニウムまたはアルミニウム合金に代えて、電気抵抗率が低くエレクトロマイグレーション耐性が高い銅（Ｃｕ）を用いる動きが顕著になっている。この種の銅配線は、基板の表面に設けた微細な配線用凹部の内部に銅を埋込むことによって一般に形成される。この銅配線を形成する方法としては、ＣＶＤ、スパッタリング及びめっきといった手法があるが、いずれにしても、基板のほぼ全表面に銅を成膜し、化学的機械的研磨（ＣＭＰ）により不要の銅を除去するようにしている。   In recent years, as a metal material for forming a wiring circuit on a semiconductor substrate, a movement of using copper (Cu) having a low electrical resistivity and a high electromigration resistance instead of aluminum or an aluminum alloy has become prominent. This type of copper wiring is generally formed by embedding copper in a fine wiring recess provided on the surface of the substrate. As a method of forming this copper wiring, there are methods such as CVD, sputtering, and plating. In any case, copper is formed on almost the entire surface of the substrate, and unnecessary copper is formed by chemical mechanical polishing (CMP). To be removed.

図１は、いわゆるディップ方式を採用した従来の電気めっき装置の一例を示す。この電気めっき装置は、内部にめっき液を保持するめっき槽１２ａと、基板Ｗをその周縁部を水密的にシールし表面（被めっき面）を露出させて着脱自在に保持する上下動自在な基板ホルダ１４ａを有している。めっき槽１２ａの内部には、アノード２４がアノードホルダ２６に保持されて垂直に配置され、更に基板ホルダ１４ａで保持した基板Ｗがアノード２４と対向する位置に配置された時に、このアノード２４と基板Ｗとの間に位置するように、中央孔２８ａを有する誘電体からなる調整板（レギュレーションプレート）２８が配置されている。   FIG. 1 shows an example of a conventional electroplating apparatus employing a so-called dip method. The electroplating apparatus includes a plating tank 12a for holding a plating solution therein, and a vertically movable substrate for holding the substrate W in a detachable manner by sealing the periphery of the substrate W in a watertight manner and exposing the surface (surface to be plated). It has a holder 14a. Inside the plating tank 12a, the anode 24 is held vertically by the anode holder 26, and when the substrate W held by the substrate holder 14a is placed at a position facing the anode 24, the anode 24 and the substrate are arranged. An adjustment plate (regulation plate) 28 made of a dielectric material having a central hole 28a is arranged so as to be positioned between W and W.

これにより、これらのアノード２４、基板Ｗ及び調整板２８をめっき槽１２ａ内のめっき液中に浸漬し、同時に、導線３０ａを介してアノード２４をめっき電源３２の陽極に、導線３０ｂを介して基板Ｗをめっき電源３２の陰極にそれぞれ接続することで、基板Ｗとアノード２４との電位差により、めっき液中の金属イオンが基板Ｗの表面より電子を受け取り、基板Ｗ上に金属が析出して金属膜が形成される。   As a result, the anode 24, the substrate W, and the adjusting plate 28 are immersed in the plating solution in the plating tank 12a. At the same time, the anode 24 is connected to the anode of the plating power source 32 via the conductive wire 30a and the substrate is connected via the conductive wire 30b. By connecting W to the cathode of the plating power source 32, the metal ions in the plating solution receive electrons from the surface of the substrate W due to the potential difference between the substrate W and the anode 24, and the metal is deposited on the substrate W. A film is formed.

このめっき装置によれば、アノード２４と該アノード２４と対向する位置に配置される基板Ｗとの間に、中央孔２８ａを有する調整板２８を配置し、この調整板２８でめっき槽１２ａ内の電位分布を調節することで、基板Ｗの表面に形成される金属膜の膜厚分布をある程度調節することができる。   According to this plating apparatus, the adjusting plate 28 having the central hole 28a is disposed between the anode 24 and the substrate W disposed at a position facing the anode 24, and the adjusting plate 28 is used in the plating tank 12a. By adjusting the potential distribution, the film thickness distribution of the metal film formed on the surface of the substrate W can be adjusted to some extent.

図２は、いわゆるディップ方式を採用した従来の電気めっき装置の他の例を示す。この電気めっき装置の図１に示す例と異なる点は、調整板を備えることなく、リング状の擬似陰極（擬似電極）３４を備え、基板Ｗの周囲に擬似陰極３４を配置した状態で、基板Ｗを基板ホルダ１４ａに保持し、更に、めっき処理に際に、導線３０ｃを介して、擬似陰極３４をめっき電源３２の陰極に接続するようにした点にある。
このめっき装置によれば、擬似陰極３４の電位を調節することで、基板Ｗの表面に形成される金属膜の膜厚の均一性を改善することができる。 FIG. 2 shows another example of a conventional electroplating apparatus employing a so-called dip method. The electroplating apparatus is different from the example shown in FIG. 1 in that the substrate is provided with a ring-like pseudo cathode (pseudo electrode) 34 without the adjustment plate, and the pseudo cathode 34 is disposed around the substrate W. W is held by the substrate holder 14a, and the pseudo cathode 34 is connected to the cathode of the plating power source 32 via the conductive wire 30c during the plating process.
According to this plating apparatus, the uniformity of the film thickness of the metal film formed on the surface of the substrate W can be improved by adjusting the potential of the pseudo cathode 34.

図３は、いわゆるディップ方式を採用した従来の電気めっき装置の更に他の例を示す。この電気めっき装置の図１に示す例と異なる点は、調整板を備えることなく、めっき槽１２ａの上方に位置して、基板ホルダ１４ａとアノード２４との間にパドルシャフト（攪拌機構）３６を平行に配置し、このパドルシャフト３６の下面に複数の攪拌翼としてのパドル（掻き混ぜ棒）３８をほぼ垂直に垂設して、めっき処理中に、パドルシャフト３６を介してパドル３８を基板Ｗと平行に往復動させてめっき槽１２ａ内のめっき液を攪拌するようにした点にある。   FIG. 3 shows still another example of a conventional electroplating apparatus employing a so-called dip method. The electroplating apparatus is different from the example shown in FIG. 1 in that a paddle shaft (stirring mechanism) 36 is provided between the substrate holder 14a and the anode 24, without being provided with an adjustment plate, and located above the plating tank 12a. Arranged in parallel, a plurality of paddles (stirring rods) 38 as stirring blades are vertically suspended from the lower surface of the paddle shaft 36, and the paddle 38 is placed on the substrate W via the paddle shaft 36 during the plating process. The plating solution in the plating tank 12a is stirred by reciprocating in parallel.

このめっき装置によれば、パドルシャフト３６を介してパドル３８を基板Ｗと平行に往復動させることで、基板Ｗの表面に沿っためっき液の流れを、基板Ｗの表面の全面でより均等にして（めっき液の流れの方向性をなくして）、基板Ｗの全面に亘ってより均一な膜厚のめっき膜を形成することができる。   According to this plating apparatus, the flow of the plating solution along the surface of the substrate W is made more uniform over the entire surface of the substrate W by reciprocating the paddle 38 in parallel with the substrate W via the paddle shaft 36. Thus, a plating film having a more uniform film thickness can be formed over the entire surface of the substrate W (without the direction of the flow of the plating solution).

従来のめっき装置では、例えば基板の内部に設けた、直径１０〜２０μｍ、深さ７０〜１５０μｍ程度の、アスペスト比が高く、深さの深いビアホールの内部に、内部にボイド等の欠陥が生じることを防止しつつ、めっきで金属膜を確実に埋込むのは一般にかなり困難であった。   In a conventional plating apparatus, for example, a defect such as a void is generated inside a via hole having a high depth ratio and a depth of about 10 to 20 μm and a depth of about 70 to 150 μm provided inside the substrate. In general, it has been quite difficult to reliably embed a metal film by plating while preventing the above-described problem.

例えば、アスペクト比が１以上と高く、深さが深いビアホールの内部にめっきで金属膜を埋込む場合、例えば図３に示すめっき装置を使用し、パドルを介してめっき液を強く撹拌させつつめっきを行うと、ビアホールの底部までめっき液の流れが行き届かない。このような状態で、図４に示すように、内部にビアホール４０を設けた絶縁膜４２を覆うバリア層４４の表面にめっきを行うと、ビアホール４０の開口端部付近でめっき析出が優先されて該開口端部が金属膜（めっき膜）４６で塞がれ、ビアホール４０の内部に埋込まれた金属膜４６の内部にボイド４８が生じてしまう。   For example, when a metal film is embedded in a via hole having a high aspect ratio of 1 or more and a deep depth by plating, for example, a plating apparatus shown in FIG. 3 is used, and the plating solution is vigorously stirred through a paddle. If this is done, the flow of plating solution will not reach the bottom of the via hole. In this state, as shown in FIG. 4, when plating is performed on the surface of the barrier layer 44 covering the insulating film 42 provided with the via hole 40 therein, plating deposition is given priority in the vicinity of the opening end of the via hole 40. The opening end is blocked by the metal film (plating film) 46, and a void 48 is generated inside the metal film 46 embedded in the via hole 40.

一方、装置自体が簡単な構造で、メンテナンスしやすい構造や機構が求められている。例えば、図２に示すめっき装置では、擬似電極の調整や擬似電極についためっき金属の除去という操作が必要になってくる。このような操作や管理上の煩雑性の問題が生じない、より取り扱いやすくて管理方法の簡便さが求められている。
なお、電気めっきにあっては、めっき中の電流密度を上げることでめっき速度を上げることができる。しかし、単に電流密度を上げると、めっきやけ、めっき欠陥、アノード表面の不動態化等が生じて、めっき不具合の原因となってしまう。 On the other hand, there is a demand for structures and mechanisms that are simple in structure and easy to maintain. For example, in the plating apparatus shown in FIG. 2, operations such as adjustment of the pseudo electrode and removal of the plating metal attached to the pseudo electrode are required. There is a need for a simpler management method that is easier to handle and that does not cause such operational and management problems.
In electroplating, the plating rate can be increased by increasing the current density during plating. However, simply increasing the current density causes plating burns, plating defects, passivation of the anode surface, and the like, causing plating defects.

本発明は上記事情に鑑みて為されたもので、比較的簡単な構成で、例えアスペクト比が高く、深さが深いビアホール等にあっても、金属膜を内部にボイドを発生させることなく確実に埋込むことができるようにしためっき装置及びめっき方法を提供することを目的とする。   The present invention has been made in view of the above circumstances, and it has a relatively simple configuration, and has a high aspect ratio, and even in a deep via hole or the like, the metal film can be reliably generated without generating voids therein. An object of the present invention is to provide a plating apparatus and a plating method that can be embedded in a metal.

請求項１に記載の発明は、めっき液を保持するめっき槽と、被めっき材を保持して該被めっき材に通電し、被めっき材の被めっき面を前記めっき槽内のめっき液に接触させるホルダと、前記めっき槽内のめっき液に浸漬させて配置されるアノードと、前記アノードと前記ホルダで保持した被めっき材との間に配置され、前記めっき槽内のめっき液を攪拌するめっき液攪拌部と、前記被めっき材と前記アノードとの間に電圧を周期的に印加するめっき電源を有し、前記被めっき材と前記アノードとの間に電圧が印加されてない時に前記めっき液攪拌部によるめっき液の攪拌を行い、前記被めっき材と前記アノードとの間に電圧が印加されている時に前記めっき液攪拌部によるめっき液の攪拌を停止することを特徴とするめっき装置である。   The invention according to claim 1 is a plating tank that holds a plating solution, and holds a material to be plated and energizes the material to be plated, and contacts a plating surface of the material to be plated with the plating solution in the plating tank. A plating solution that is disposed between a holder to be immersed, an anode that is immersed in a plating solution in the plating tank, and a material to be plated that is held by the anode and the holder, and agitates the plating solution in the plating tank A plating power source that periodically applies a voltage between the liquid stirring unit and the material to be plated and the anode, and the plating solution when no voltage is applied between the material to be plated and the anode A plating apparatus that stirs a plating solution by a stirring unit and stops stirring of the plating solution by the plating solution stirring unit when a voltage is applied between the material to be plated and the anode. .

被めっき材とアノードとの間に電圧が印加されてない非めっき時にめっき液攪拌部によるめっき液の攪拌を行うことで、ビアホール等の内部のめっき液を非めっき時に新たなめっき液に置換し、被めっき材とアノードとの間に電圧が印加されているめっき時にめっき液攪拌部によるめっき液の攪拌を停止することで、新たなめっき液の供給のない状態でめっきを行うことができる。これによって、ビアホール等の開口端部で金属膜（めっき膜）が優先的に析出されることを防止して、ビアホール等の内部にボイドのない金属膜を埋込むことができる。   The plating solution is stirred by the plating solution stirring unit when no voltage is applied between the material to be plated and the anode, so that the plating solution inside the via hole is replaced with a new plating solution when not plating. By stopping the agitation of the plating solution by the plating solution agitation unit at the time of plating in which a voltage is applied between the material to be plated and the anode, it is possible to perform plating without supplying a new plating solution. Accordingly, it is possible to prevent the metal film (plating film) from being preferentially deposited at the opening end portion of the via hole or the like, and to fill the inside of the via hole or the like with a void-free metal film.

請求項２に記載の発明は、前記めっき液攪拌部は、前記ホルダで保持した被めっき材の被めっき面に平行に往復動するパドルからなることを特徴とする請求項１記載のめっき装置である。
これにより、パドルを往復動させることで、被めっき材とアノードとの間のめっき液を攪拌させ、パドルの移動を停止させることで、被めっき材とアノードとの間のめっき液の攪拌を停止させることができる。 According to a second aspect of the present invention, in the plating apparatus according to the first aspect, the plating solution stirring section includes a paddle that reciprocates in parallel with the surface to be plated of the material to be plated held by the holder. is there.
As a result, the plating solution between the material to be plated and the anode is stirred by reciprocating the paddle, and the movement of the paddle is stopped by stopping the stirring of the plating solution between the material to be plated and the anode. Can be made.

請求項３に記載の発明は、前記めっき液攪拌部は、前記ホルダで保持した被めっき材の被めっき面に向けてめっき液を噴射するめっき液噴射ノズルからなることを特徴とする請求項１または２記載のめっき装置である。
これにより、被めっき材の被めっき面に向けてめっき液噴射ノズルからめっき液を噴射することで、被めっき材とアノードとの間のめっき液を攪拌させ、めっき液噴射ノズルからのめっき液に噴射を停止することで、被めっき材とアノードとの間のめっき液の攪拌を停止させることができる。
このめっき液噴射ノズルは、前記パドルに一体に設けて該パドルと一体に移動するようにしても良く、まためっき槽の内部に固定した状態で配置してもよい。 The invention as set forth in claim 3 is characterized in that the plating solution agitating portion comprises a plating solution injection nozzle for injecting a plating solution toward a surface to be plated of a material to be plated held by the holder. Or it is the plating apparatus of 2 description.
Thus, by injecting the plating solution from the plating solution spray nozzle toward the surface to be plated of the material to be plated, the plating solution between the material to be plated and the anode is stirred, and the plating solution from the plating solution injection nozzle is stirred. By stopping the injection, stirring of the plating solution between the material to be plated and the anode can be stopped.
The plating solution spray nozzle may be provided integrally with the paddle so as to move integrally with the paddle, or may be disposed in a state of being fixed inside the plating tank.

請求項４に記載の発明は、前記被めっき材と前記アノードとの間に、電流密度が０．１〜０．８Ａ／ｄｍ２となるように電圧を印加することを特徴とする請求項１乃至３のいずれかに記載のめっき装置である。
このように、比較的低い電流密度でめっきを行うことで、より高い埋込み特性が得られることが実験的に確かめられている。 The invention described in claim 4 is characterized in that a voltage is applied between the material to be plated and the anode so that a current density is 0.1 to 0.8 A / dm 2. The plating apparatus according to any one of 1 to 3.
Thus, it has been experimentally confirmed that higher embedding characteristics can be obtained by performing plating at a relatively low current density.

請求項５に記載の発明は、めっき槽内のめっき液中に被めっき材とアノードとを互いに対峙させて配置し、前記被めっき材と前記アノードとの間に電圧を周期的に印加し、前記被めっき材と前記アノードとの間に電圧が印加されてない時に前記被めっき材と前記アノードとの間のめっき液を攪拌し、前記被めっき材と前記アノードとの間に電圧が印加されている時に前記被めっき材と前記アノードとの間のめっき液の攪拌を停止することを特徴とするめっき方法である。   The invention according to claim 5 arranges the material to be plated and the anode so as to face each other in the plating solution in the plating tank, and periodically applies a voltage between the material to be plated and the anode, When a voltage is not applied between the material to be plated and the anode, the plating solution between the material to be plated and the anode is stirred, and a voltage is applied between the material to be plated and the anode. In the plating method, stirring of the plating solution between the material to be plated and the anode is stopped.

請求項６に記載の発明は、前記被めっき材と前記アノードとの間に配置したパドルを該被めっき材と平行に往復動させてめっき液を攪拌し、該パドルの移動を停止させてめっき液の攪拌を停止することを特徴とする請求項５記載のめっき方法である。
請求項７に記載の発明は、前記被めっき材と前記アノードとの間に配置しためっき液噴射ノズルから該被めっき材に向けてめっき液を噴射してめっき液を攪拌し、該めっき液噴射ノズルからのめっき液の噴射を停止してめっき液の攪拌を停止することを特徴とする請求項５または６記載のめっき方法である。 In the invention according to claim 6, the paddle disposed between the material to be plated and the anode is reciprocated in parallel with the material to be plated, the plating solution is stirred, and the movement of the paddle is stopped to perform plating. 6. The plating method according to claim 5, wherein stirring of the liquid is stopped.
In the invention according to claim 7, the plating solution is jetted from the plating solution spray nozzle arranged between the material to be plated and the anode toward the material to be plated, and the plating solution is stirred. 7. The plating method according to claim 5, wherein the spraying of the plating solution from the nozzle is stopped to stop the stirring of the plating solution.

請求項８に記載の発明は、前記被めっき材と前記アノードとの間に、電流密度が０．１〜０．８Ａ／ｄｍ２となるように電圧を印加することを特徴とする請求項５乃至７のいずれかに記載のめっき方法である。 The invention according to claim 8 is characterized in that a voltage is applied between the material to be plated and the anode so that a current density is 0.1 to 0.8 A / dm 2. It is the plating method in any one of thru | or 7.

本発明によれば、ビアホール等の開口端部で金属膜（めっき膜）が優先的に析出されることを防止して、アスペスト比が高く、埋込み深さの深いビアホール等であっても、金属膜を内部にボイドを発生させることなく確実に埋込むことができる。   According to the present invention, a metal film (plating film) is prevented from preferentially precipitating at the opening end of a via hole or the like, and even if the via hole has a high aspect ratio and a deep embedding depth, The film can be reliably embedded without generating voids inside.

以下、本発明の実施の形態を図面を参照して説明する。なお、以下の実施の形態では、被めっき材として半導体ウェーハ等の基板を使用した例を示す。
図５は、本発明の実施の形態におけるめっき装置を備えためっき処理設備の全体配置図を示す。このめっき処理設備は、基板の前処理、めっき処理及びめっきの後処理のめっき全工程を連続して自動的に行うようにしたもので、外装パネルを取付けた装置フレーム１１０の内部は、仕切板１１２によって、基板のめっき処理及びめっき液が付着した基板の処理を行うめっき空間１１６と、それ以外の処理、すなわちめっき液に直接には関わらない処理を行う清浄空間１１４に区分されている。そして、めっき空間１１６と清浄空間１１４とを仕切る仕切板１１２で仕切られた仕切り部には、基板ホルダ１６０（図６参照）を２枚並列に配置して、この各基板ホルダ１６０との間で基板の脱着を行う、基板受渡し部としての基板脱着台１６２が備えられている。清浄空間１１４には、基板を収納した基板カセットを載置搭載するロード・アンロードポート１２０が接続され、更に、装置フレーム１１０には、操作パネル１２１が備えられている。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiment, an example in which a substrate such as a semiconductor wafer is used as a material to be plated will be described.
FIG. 5 shows an overall layout diagram of the plating processing equipment provided with the plating apparatus in the embodiment of the present invention. This plating processing equipment is configured to automatically and continuously perform all steps of substrate pre-treatment, plating treatment and post-plating treatment. The interior of the apparatus frame 110 to which the exterior panel is attached is a partition plate. 112 is divided into a plating space 116 for performing the plating process on the substrate and the substrate to which the plating solution adheres, and a clean space 114 for performing other processes, that is, a process not directly related to the plating solution. Then, two substrate holders 160 (see FIG. 6) are arranged in parallel in the partition portion partitioned by the partition plate 112 that partitions the plating space 116 and the clean space 114, and between the substrate holders 160. A substrate detachment table 162 is provided as a substrate delivery unit for detaching the substrate. The clean space 114 is connected to a load / unload port 120 on which a substrate cassette containing substrates is placed and mounted, and the apparatus frame 110 is provided with an operation panel 121.

清浄空間１１４の内部には、基板のオリフラやノッチなどの位置を所定方向に合わせるアライナ１２２と、めっき処理後の基板を洗浄し高速回転させてスピン乾燥させる２台の洗浄・乾燥装置１２４と、基板の前処理、この例では、基板の表面（被めっき面）に向けて純水を吹きかけることで、基板表面を純水で洗浄するとともに、純水で濡らして親水性を良くする水洗前処理を行う前処理装置１２６が、その四隅に位置して配置されている。更に、これらの各処理装置、つまりアライナ１２２、洗浄・乾燥装置１２４及び前処理装置１２６のほぼ中心に位置して、これらの各処理装置１２２，１２４，１２６、前記基板脱着台１６２及び前記ロード・アンロードポート１２０に搭載した基板カセットとの間で基板の搬送と受渡しを行う第１搬送ロボット１２８が配置されている。   Inside the clean space 114, an aligner 122 for aligning the orientation flat or notch of the substrate in a predetermined direction, two cleaning / drying devices 124 for cleaning the substrate after plating and rotating it at high speed for spin drying, Pre-treatment of the substrate, in this example, spraying pure water toward the surface of the substrate (surface to be plated) to clean the substrate surface with pure water and also wet with pure water to improve hydrophilicity The pre-processing device 126 that performs is arranged at the four corners. Further, these processing devices, that is, the aligner 122, the cleaning / drying device 124, and the pre-processing device 126 are positioned substantially at the center, and the processing devices 122, 124, 126, the substrate detachment table 162, and the load A first transfer robot 128 that transfers and transfers the substrate to and from the substrate cassette mounted on the unload port 120 is disposed.

清浄空間１１４内に配置されたアライナ１２２、洗浄・乾燥装置１２４及び前処理装置１２６は、表面を上向きにした水平姿勢で基板を保持して処理する。搬送ロボット１２８は、表面を上向きにした水平姿勢で基板を保持して基板の搬送及び受渡しを行う。   The aligner 122, the cleaning / drying device 124, and the pretreatment device 126 arranged in the clean space 114 hold and process the substrate in a horizontal posture with the surface facing upward. The transfer robot 128 holds the substrate in a horizontal posture with the surface facing upward, and transfers and delivers the substrate.

めっき空間１１６内には、仕切板１１２側から順に、基板ホルダ１６０の保管及び一時仮置きを行うストッカ１６４、例えば基板の表面に形成したシード層表面の電気抵抗の大きい酸化膜を硫酸や塩酸などの薬液でエッチング除去する活性化処理装置１６６、基板の表面を純水で水洗する第１水洗装置１６８ａ、めっき処理を行うめっき装置１７０、第２水洗装置１６８ｂ及びめっき処理後の基板の水切りを行うブロー装置１７２が順に配置されている。そして、これらの装置の側方に位置して、２台の第２搬送ロボット１７４ａ，１７４ｂがレール１７６に沿って走行自在に配置されている。この一方の第２搬送ロボット１７４ａは、基板脱着台１６２とストッカ１６４との間で基板ホルダ１６０の搬送を行う。他方の第２搬送ロボット１７４ｂは、ストッカ１６４、活性化処理装置１６６、第１水洗装置１６８ａ、めっき装置１７０、第２水洗装置１６８ｂ及びブロー装置１７２の間で基板ホルダ１６０の搬送を行う。   In the plating space 116, in order from the partition plate 112 side, a stocker 164 for storing and temporarily placing the substrate holder 160, for example, an oxide film having a high electrical resistance on the surface of the seed layer formed on the surface of the substrate is sulfuric acid, hydrochloric acid, or the like. Activation treatment apparatus 166 for etching away with the chemical solution, first water washing apparatus 168a for washing the surface of the substrate with pure water, plating apparatus 170 for performing plating treatment, second water washing apparatus 168b, and draining of the substrate after the plating treatment. Blow devices 172 are arranged in order. Two second transfer robots 174 a and 174 b are disposed along the rails 176 so as to be located on the side of these devices. The one second transfer robot 174 a transfers the substrate holder 160 between the substrate attaching / detaching table 162 and the stocker 164. The other second transport robot 174 b transports the substrate holder 160 among the stocker 164, the activation processing device 166, the first water washing device 168 a, the plating device 170, the second water washing device 168 b, and the blow device 172.

第２搬送ロボット１７４ａ，１７４ｂは、図６に示すように、鉛直方向に延びるボディ１７８と、このボディ１７８に沿って上下動自在でかつ軸心を中心に回転自在なアーム１８０を備えており、このアーム１８０に、基板ホルダ１６０を着脱自在に保持する基板ホルダ保持部１８２が２個並列に備えられている。基板ホルダ１６０は、表面を露出させ周縁部をシールした状態で基板Ｗを着脱自在に保持するように構成されている。   As shown in FIG. 6, the second transfer robots 174 a and 174 b include a body 178 extending in the vertical direction, and an arm 180 that can move up and down along the body 178 and can rotate about the axis. The arm 180 is provided with two substrate holder holding portions 182 that detachably hold the substrate holder 160 in parallel. The substrate holder 160 is configured to detachably hold the substrate W with the surface exposed and the peripheral edge sealed.

ストッカ１６４、活性化処理装置１６６、水洗装置１６８ａ，１６８ｂ及びめっき装置１７０は、基板ホルダ１６０の両端部に設けた外方に突出する突出部１６０ａを上端部に引っ掛けて、基板ホルダ１６０を鉛直方向に吊り下げた状態で支持する。活性化処理装置１６６には、内部に薬液を保持する２個の活性化処理槽１８３が備えられ、図６に示すように、基板Ｗを装着した基板ホルダ１６０を鉛直状態で保持した第２搬送ロボット１７４ｂのアーム１８０を下降させ、基板ホルダ１６０を活性化処理槽１８３の上端部に引っ掛けて吊下げ支持することで、基板ホルダ１６０を基板Ｗごと活性化処理槽１８３内の薬液に浸漬させて活性化処理を行うように構成されている。   The stocker 164, the activation processing device 166, the rinsing devices 168 a and 168 b, and the plating device 170 hook the protrusions 160 a projecting outwardly provided at both ends of the substrate holder 160 to the upper end portion, and the substrate holder 160 is moved in the vertical direction. Support in a suspended state. The activation processing apparatus 166 is provided with two activation processing tanks 183 for holding a chemical solution therein, and as shown in FIG. 6, the second transfer holding the substrate holder 160 with the substrate W mounted in a vertical state. The arm 180 of the robot 174b is lowered, and the substrate holder 160 is hooked on the upper end portion of the activation treatment tank 183 and supported by being suspended, so that the substrate holder 160 and the substrate W are immersed in the chemical solution in the activation treatment tank 183. An activation process is performed.

同様に、水洗装置１６８ａ，１６８ｂには、内部に純水を保持した各２個の水洗槽１８４ａ，１８４ｂが、めっき装置１７０には、内部にめっき液を保持した複数のめっき槽１８６がそれぞれ備えられ、前述と同様に、基板ホルダ１６０を基板Ｗごとこれらの水洗槽１８４ａ，１８４ｂ内の純水またはめっき槽１８６内のめっき液に浸漬させることで、水洗処理やめっき処理が行われるように構成されている。またブロー装置１７２は、基板Ｗを装着した基板ホルダ１６０を鉛直状態で保持した第２搬送ロボット１７４ｂのアーム１８０を下降させ、この基板ホルダ１６０に装着した基板Ｗにエアーや不活性ガスを吹きかけることで、基板のブロー処理を行うように構成されている。   Similarly, each of the water washing apparatuses 168a and 168b includes two washing tanks 184a and 184b each holding pure water therein, and the plating apparatus 170 includes a plurality of plating tanks 186 each holding a plating solution therein. In the same manner as described above, the substrate holder 160 and the substrate W are immersed in pure water in the water washing tanks 184a and 184b or in a plating solution in the plating tank 186 so that the water washing process and the plating process are performed. Has been. The blower 172 lowers the arm 180 of the second transfer robot 174b that holds the substrate holder 160 with the substrate W mounted thereon in a vertical state, and blows air or an inert gas onto the substrate W mounted on the substrate holder 160. Thus, the substrate is blown.

めっき装置１７０の各めっき槽１８６は、図７に示すように、内部に一定量のめっき液１８８を保持するように構成され、このめっき液１８８中に、基板ホルダ１６０で周縁部を水密的にシールし表面（被めっき面）を露出させて保持した基板Ｗを浸漬させて配置するようになっている。   As shown in FIG. 7, each plating tank 186 of the plating apparatus 170 is configured to hold a certain amount of plating solution 188 therein, and the peripheral portion of the plating solution 188 is watertight with the substrate holder 160. The substrate W that is sealed and held with its surface (surface to be plated) exposed is immersed and arranged.

めっき槽１８６の底部には、図８に示すように、この例では２つのめっき液排出ライン１９０が連結されている。そして、この各めっき液排出ライン１９０は、それぞれ２つのめっき液供給ライン１９２に分岐し、この各めっき液供給ライン１９２の内部に、ポンプ１９４、流量計１９６及び流量調整バルブ１９８が介装されている。更に、１つのめっき液供給ライン１９２は、ポンプ１９４と流量計１９６との間で、めっき槽１８６の底部に接続された戻りライン２００に分岐し、この戻りライン２００に流量調整バルブ２０２及びフィルタ２０４が介装されている。めっき槽１８６の側部には、内部に流量調整バルブ２０６、ポンプ２０８及び冷却器（チラー）２１０を介装しためっき液循環ライン２１２が設けられている。   As shown in FIG. 8, two plating solution discharge lines 190 are connected to the bottom of the plating tank 186 in this example. Each plating solution discharge line 190 branches into two plating solution supply lines 192, and a pump 194, a flow meter 196, and a flow rate adjustment valve 198 are provided inside each plating solution supply line 192. Yes. Further, one plating solution supply line 192 branches between a pump 194 and a flow meter 196 into a return line 200 connected to the bottom of the plating tank 186, and the flow rate adjusting valve 202 and the filter 204 are connected to the return line 200. Is intervening. A plating solution circulation line 212 having a flow rate adjusting valve 206, a pump 208, and a cooler (chiller) 210 provided therein is provided at the side of the plating tank 186.

これによって、めっき槽１８６内のめっき液１８８は、各めっき液供給ライン１９２に備えられたポンプ１９４の駆動に伴って循環し、しかも、各めっき液供給ライン１９２に沿って流れるめっき液１８８の流量が流量調整バルブ１９８で調節される。また、めっき液１８８の一部は、戻りライン２００からフィルタ２０４を通過してめっき槽１８６の内部に戻される。更に、めっき槽１８６内のめっき液１８８は、めっき液循環ライン２１２に備えられたポンプ２０８の駆動に伴って循環し、冷却器２１０によって所定の温度に冷却される。   As a result, the plating solution 188 in the plating tank 186 circulates with the drive of the pump 194 provided in each plating solution supply line 192, and the flow rate of the plating solution 188 flowing along each plating solution supply line 192. Is adjusted by the flow rate adjusting valve 198. Further, a part of the plating solution 188 passes through the filter 204 from the return line 200 and is returned to the inside of the plating tank 186. Further, the plating solution 188 in the plating tank 186 circulates as the pump 208 provided in the plating solution circulation line 212 is driven, and is cooled to a predetermined temperature by the cooler 210.

めっき槽１８６の内部には、図７に示すように、基板Ｗの形状に沿った円板状のアノード２１４がアノードホルダ２１６に保持されて垂直に設置されている。このアノード２１４は、めっき槽１８６内にめっき液１８８を満たした時に、このめっき液１８８中に浸漬され、基板ホルダ１６０で保持してめっき槽１８６内の所定の位置に配置される基板Ｗと対面する。更に、めっき槽１８６の内部には、アノード２１４とめっき槽１８６内の所定の位置に配置される基板ホルダ１６０との間に位置して、内部に中央孔２１８ａを有する誘電体からなり、めっき槽１８６内の電位分布を調整する調整板（レギュレーションプレート）２１８が配置されている。   Inside the plating tank 186, as shown in FIG. 7, a disc-shaped anode 214 along the shape of the substrate W is held by an anode holder 216 and installed vertically. When the plating solution 188 is filled in the plating tank 186, the anode 214 is immersed in the plating solution 188, held by the substrate holder 160, and faces the substrate W disposed at a predetermined position in the plating tank 186. To do. Further, the inside of the plating tank 186 is made of a dielectric that is located between the anode 214 and the substrate holder 160 disposed at a predetermined position in the plating tank 186 and has a central hole 218a inside, and is provided in the plating tank. An adjustment plate (regulation plate) 218 for adjusting the potential distribution in 186 is disposed.

めっき槽１８６の内部には、めっき槽１８６内の所定の位置に配置される基板ホルダ１６０と調整板２１８との間に位置して、めっき液供給ライン１９２と同数（合計４つ）の鉛直方向に延びるパドル２２０が等ピッチで配置されている。このパドル２２０は、めっき液攪拌部を構成する。めっき槽１８６の上方に位置して、基板ホルダ１６０で保持した基板Ｗと平行に延び、軸方向に往復動自在なパドルシャフト２２２が配置され、このパドルシャフト２２２にパドル（めっき液攪拌部）２２０の上端が連結されている。   Inside the plating tank 186 is located between the substrate holder 160 disposed at a predetermined position in the plating tank 186 and the adjustment plate 218, and has the same number (four in total) as the plating solution supply lines 192 in the vertical direction. Paddles 220 extending in the same manner are arranged at an equal pitch. The paddle 220 constitutes a plating solution stirring unit. A paddle shaft 222 that is located above the plating tank 186 and extends in parallel with the substrate W held by the substrate holder 160 and is capable of reciprocating in the axial direction is disposed on the paddle shaft 222. Are connected at the top.

これによって、図９に示すように、パドルシャフト２２２の往復動に伴って、パドル２２０が基板ホルダ１６０で保持した基板Ｗと平行に該基板Ｗの前面を往復動する。このように、パドル２２０を往復動させてめっき槽１８６内のめっき液１８８を攪拌し、往復動を停止させることでめっき槽１８６内のめっき液１８８の攪拌を停止させる。   As a result, as shown in FIG. 9, as the paddle shaft 222 reciprocates, the paddle 220 reciprocates the front surface of the substrate W in parallel with the substrate W held by the substrate holder 160. Thus, the paddle 220 is reciprocated to stir the plating solution 188 in the plating tank 186, and the reciprocation is stopped to stop the stirring of the plating liquid 188 in the plating tank 186.

各パドル２２０には、その長さ方向に沿った所定のピッチで、めっき液攪拌部としての多数のめっき液噴射ノズル２２４が、基板ホルダ１６０で保持した基板Ｗに向けて設けられている。そして、この各パドル２２０の上部には、めっき液供給ライン１９２が個別に接続されて、めっき液供給ノズル（めっき液攪拌部）２２４とめっき液供給ライン１９２がパドル２２０の内部に形成した流路を介して互いに連通するようになっている。   Each paddle 220 is provided with a large number of plating solution injection nozzles 224 as plating solution stirring portions toward the substrate W held by the substrate holder 160 at a predetermined pitch along the length direction. A plating solution supply line 192 is individually connected to the upper part of each paddle 220, and a flow path formed by the plating solution supply nozzle (plating solution stirring unit) 224 and the plating solution supply line 192 inside the paddle 220. They are in communication with each other.

これによって、めっき液供給ライン１９２に備えられたポンプ１９４の駆動に伴って該めっき液供給ライン１９２に沿って流れためっき液１８８は、めっき液噴射ノズル２２４から基板ホルダ１６０で保持した基板Ｗに向けて噴射されて循環する。このように、めっき液１８８を基板Ｗに向けて噴射することで、めっき槽１８６内のめっき液１８８を攪拌しながら循環させ、このめっき液１８８の噴射を停止することで、めっき槽１８６内のめっき液１８８の攪拌を停止させる。   As a result, the plating solution 188 that flows along the plating solution supply line 192 when the pump 194 provided in the plating solution supply line 192 is driven is applied to the substrate W held by the substrate holder 160 from the plating solution injection nozzle 224. It is jetted toward and circulates. Thus, by spraying the plating solution 188 toward the substrate W, the plating solution 188 in the plating tank 186 is circulated while stirring, and by stopping the spraying of the plating solution 188, the plating liquid 188 in the plating tank 186 is stopped. Agitation of the plating solution 188 is stopped.

パドル２２０及びめっき液噴射ノズル２２４は、例えば、ＰＶＣ，ＰＰ，ＰＥＥＫ，ＰＥＳ，ＨＴ−ＰＶＣ，ＰＦＡ，ＰＴＦＥ，その他の樹脂系材料からなる誘電体から構成されていることが好ましい。これによって、これらの存在によって、めっき槽１８６内の電界分布が乱されてしまうことを防止することができる。   The paddle 220 and the plating solution injection nozzle 224 are preferably made of a dielectric made of, for example, PVC, PP, PEEK, PES, HT-PVC, PFA, PTFE, or other resin materials. Thereby, it is possible to prevent the electric field distribution in the plating tank 186 from being disturbed due to the presence thereof.

めっき装置１７０には、めっき時に陽極が導線２２８ａを介してアノード２１４に、陰極が導線２２８ｂを介して基板Ｗにそれぞれ接続されるめっき電源２３０が備えられている。このめっき電源２３０は、制御部２５０に接続され、この制御部２５０からの信号に基づいて、アノード２１４と基板Ｗとの間に、図１０に示すように、電圧Ｖ１と電圧０（電圧の印加停止）を周期的に繰返すパルス電圧を印加するように構成されている。つまり、例えば所定時間（〜ｔ１）経過した後、アノード２１４と基板Ｗとの間に電圧Ｖ１を所定時間Ｔ１印加し、この電圧の印加を所定時間Ｔ２停止すること周期的に繰返すようにしている。この電圧Ｖ１のパルス幅（時間）Ｔ１は、例えば１０〜１６０秒、好ましくは２０〜１２０秒、更に好ましくは４０〜８０秒である。また、電圧０のパルス幅（電圧の停止時間）Ｔ２は、例えば５〜１２０秒、好ましくは１５〜１００秒、更に好ましくは３０〜８０秒である。 The plating apparatus 170 is provided with a plating power source 230 in which the anode is connected to the anode 214 via the conductor 228a and the cathode is connected to the substrate W via the conductor 228b during plating. The plating power source 230 is connected to the control unit 250, based on a signal from the control unit 250, between the anode 214 and the substrate W, as shown in FIG. 10, the voltage V 1 and the voltage 0 (voltage It is configured to apply a pulse voltage that periodically repeats application stop. That is, for example, after a predetermined time (˜t 1 ) has elapsed, the voltage V 1 is applied between the anode 214 and the substrate W for a predetermined time T 1 , and this voltage application is periodically stopped for a predetermined time T 2. I am doing so. The pulse width (time) T 1 of the voltage V 1 is, for example, 10 to 160 seconds, preferably 20 to 120 seconds, and more preferably 40 to 80 seconds. Further, (stop time of the voltage) T 2 pulse width of the voltage zero, for example 5 to 120 seconds, preferably 15 to 100 seconds, more preferably 30 to 80 seconds.

基板Ｗとアノード２１４との間に周期的に印加する電圧Ｖ１は、一般的には、電流密度が０．１〜０．８Ａ／ｄｍ２となるような電圧である。このように、比較的低い電流密度でめっきを行うことで、より高い埋込み特性が得られることが実験的に確かめられている。この電圧Ｖ１は、電流密度が０．２〜０．６Ａ／ｄｍ２となるような電圧であることが好ましく、電流密度が０．２５〜０．４Ａ／ｄｍ２となるような電圧であることが更に好ましい。 The voltage V 1 that is periodically applied between the substrate W and the anode 214 is generally such that the current density is 0.1 to 0.8 A / dm 2 . Thus, it has been experimentally confirmed that higher embedding characteristics can be obtained by performing plating at a relatively low current density. The voltages V 1, it is preferably a voltage in which the current density is 0.25~0.4A / dm 2 current density is a voltage such that 0.2~0.6A / dm 2 More preferably.

制御部２５０は、アノード２１４と基板Ｗとの間への周期的な電圧の印加に同期して、めっき液攪拌部としてのパドル２２０の動き、及びめっき液噴射ノズル２２４からのめっき液の噴射を制御する。つまり、基板Ｗとアノード２１４との間に電圧が印加されてない時間Ｔ２にパドル２２０を往復動させるとともに、めっき液噴射ノズル２２４からめっき液１８８の噴射してめっき液１８８の攪拌を行う。そして、基板Ｗとアノード２１４との間に電圧Ｖ１が印加されている時間Ｔ１にパドル２２０の往復動及びめっき液噴射ノズル２２４からのめっき液１８８の噴射を停止させてめっき液１８８の攪拌を停止させる。 The control unit 250 synchronizes with the application of a periodic voltage between the anode 214 and the substrate W, and moves the paddle 220 as the plating solution stirring unit and sprays the plating solution from the plating solution spray nozzle 224. Control. That is, the paddle 220 is reciprocated at a time T 2 when no voltage is applied between the substrate W and the anode 214, and the plating solution 188 is jetted from the plating solution jet nozzle 224 to stir the plating solution 188. Then, the reciprocation of the paddle 220 and the spraying of the plating solution 188 from the plating solution spray nozzle 224 are stopped at the time T 1 when the voltage V 1 is applied between the substrate W and the anode 214, and the plating solution 188 is stirred. Stop.

このように、基板Ｗとアノード２１４との間に電圧が印加されてない非めっき時にめっき液１８８の攪拌を行うことで、ビアホール等の内部のめっき液を非めっき時に新たなめっき液に置換し、基板Ｗとアノード２１４との間に電圧が印加されているめっき時にめっき液１８８の攪拌を停止することで、新たなめっき液の供給のない状態でめっきを行うことができる。これによって、ビアホール等の開口端部で金属膜（めっき膜）が優先的に析出されることを防止して、ビアホール等の内部にボイドのない金属膜を埋込むことができる。   In this way, by stirring the plating solution 188 during non-plating when no voltage is applied between the substrate W and the anode 214, the internal plating solution such as a via hole is replaced with a new plating solution during non-plating. By stopping the stirring of the plating solution 188 during plating in which a voltage is applied between the substrate W and the anode 214, plating can be performed without supplying a new plating solution. Accordingly, it is possible to prevent the metal film (plating film) from being preferentially deposited at the opening end portion of the via hole or the like, and to fill the inside of the via hole or the like with a void-free metal film.

このめっき装置１７０によれば、先ず、めっき槽１８６の内部に所定量のめっき液１８８を満たしておく。そして、基板Ｗを保持した基板ホルダ１６０を下降させて、基板Ｗをめっき槽１８６内のめっき液１８８に浸漬した所定の位置に配置する。この状態で、めっき液供給ライン１９２のポンプ１９４を駆動してめっき液噴射ノズル２２４からめっき液１８８を基板Ｗの表面に向けて噴射し、これによって、めっき槽１８６内のめっき液１８８を循環させる。同時に、パドルシャフト２２２を介してパドル２２０を往復動させる。また、必要に応じてめっき液循環ライン２１２のポンプ２０８を駆動して、めっき槽１８６内のめっき液１８８を循環させつつ冷却して所定の温度に維持する。   According to this plating apparatus 170, first, a predetermined amount of plating solution 188 is filled in the plating tank 186. Then, the substrate holder 160 holding the substrate W is lowered, and the substrate W is disposed at a predetermined position immersed in the plating solution 188 in the plating tank 186. In this state, the pump 194 of the plating solution supply line 192 is driven to inject the plating solution 188 from the plating solution injection nozzle 224 toward the surface of the substrate W, thereby circulating the plating solution 188 in the plating tank 186. . At the same time, the paddle 220 is reciprocated through the paddle shaft 222. Further, if necessary, the pump 208 of the plating solution circulation line 212 is driven, and the plating solution 188 in the plating tank 186 is circulated to be cooled and maintained at a predetermined temperature.

そして、所定時間経過した後、アノード２１４と基板Ｗとの間に、電圧Ｖ１と電圧０（電圧の印加停止）を周期的に繰返すパルス電圧を印加する。これによって、アノード２１４と基板Ｗとの間に電圧Ｖ１を印加してめっきを行う操作と、アノード２１４と基板Ｗとの間に電圧を印加することなくめっきを行わない操作を繰返す。これに同期して、基板Ｗとアノード２１４との間に電圧Ｖ１が印加されてない非めっき時にパドル２２０を往復動させるとともに、めっき液噴射ノズル２２４からのめっき液１８８を基板Ｗに向けて噴射してめっき液１８８の攪拌を行い、基板Ｗとアノード２１４との間に電圧Ｖ１が印加されているめっき時にパドル２２０の往復動及びめっき液噴射ノズル２２４からのめっき液１８８の噴射を停止させてめっき液１８８の攪拌を停止させる。 After a predetermined time has elapsed, a pulse voltage that periodically repeats voltage V 1 and voltage 0 (voltage application stop) is applied between the anode 214 and the substrate W. As a result, the operation of applying the voltage V 1 between the anode 214 and the substrate W and performing the plating and the operation of performing the plating without applying the voltage between the anode 214 and the substrate W are repeated. In synchronization with this, the paddle 220 is reciprocated during non-plating when the voltage V 1 is not applied between the substrate W and the anode 214, and the plating solution 188 from the plating solution injection nozzle 224 is directed toward the substrate W. The plating solution 188 is agitated and the plating solution 188 is stirred, and the reciprocation of the paddle 220 and the injection of the plating solution 188 from the plating solution injection nozzle 224 are stopped at the time of plating in which the voltage V 1 is applied between the substrate W and the anode 214. The stirring of the plating solution 188 is stopped.

そして、所定時間経過後、アノード２１４と基板Ｗとの間への電圧の周期的な印加を停止し、パドル２２０の往復動及びめっき液噴射ノズル２２４からのめっき液１８８の噴射を停止させてめっきを終了する。   Then, after a predetermined time has elapsed, the periodic application of the voltage between the anode 214 and the substrate W is stopped, and the reciprocation of the paddle 220 and the injection of the plating solution 188 from the plating solution injection nozzle 224 are stopped to perform plating. Exit.

このように構成しためっき処理設備によって、銅配線を形成する一連のめっき処理を、図１１を更に参照して説明する。先ず、図１１（ａ）に示すように、半導体素子を形成した半導体基材１上の導電層１ａの上にＳｉＯ２からなる酸化膜やＬｏｗ−ｋ材膜等の絶縁膜２を堆積し、この絶縁膜２の内部に、リソグラフィ・エッチング技術により、配線用凹部としてのビアホール３とトレンチ４を形成し、その上にＴａ，ＴａＮ，ＴｉＮ，ＷＮ，ＳｉＴｉＮ，ＣｏＷＰまたはＣｏＷＢ等からなるバリア層５、更にその上に電解めっきの給電層としてシード層（導電層）７を形成した基板Ｗを用意する。そして、この基板Ｗをその表面（被めっき面）を上にした状態で基板カセットに収容し、この基板カセットをロード・アンロードポート１２０に搭載する。 A series of plating processes for forming the copper wiring by the plating processing equipment configured as described above will be described with further reference to FIG. First, as shown in FIG. 11A, an insulating film 2 such as an oxide film made of SiO 2 or a low-k material film is deposited on a conductive layer 1a on a semiconductor substrate 1 on which a semiconductor element is formed, Via holes 3 and trenches 4 are formed as recesses for wiring inside the insulating film 2 by lithography / etching technique, and a barrier layer 5 made of Ta, TaN, TiN, WN, SiTiN, CoWP, CoWB or the like is formed thereon. Further, a substrate W on which a seed layer (conductive layer) 7 is formed as a power feeding layer for electrolytic plating is prepared. Then, this substrate W is accommodated in a substrate cassette with its surface (surface to be plated) facing up, and this substrate cassette is mounted on the load / unload port 120.

このロード・アンロードポート１２０に搭載した基板カセットから、第１搬送ロボット１２８で基板Ｗを１枚取出し、アライナ１２２に載せてオリフラやノッチなどの位置を所定の方向に合わせる。このアライナ１２２で方向を合わせた基板Ｗを第１搬送ロボット１２８で前処理装置１２６に搬送する。そして、この前処理装置１２６で、前処理液に純水を使用した前処理（水洗前処理）を施す。一方、ストッカ１６４内に鉛直姿勢で保管されていた基板ホルダ１６０を第２搬送ロボット１７４ａで取出し、これを９０゜回転させた水平状態にして基板脱着台１６２に２個並列に載置する。   One substrate W is taken out from the substrate cassette mounted on the load / unload port 120 by the first transfer robot 128 and placed on the aligner 122 so that the orientation flat, notch, etc. are aligned in a predetermined direction. The substrate W whose direction is adjusted by the aligner 122 is transferred to the pretreatment apparatus 126 by the first transfer robot 128. Then, in this pretreatment device 126, pretreatment using pure water (pretreatment with water washing) is performed on the pretreatment liquid. On the other hand, the substrate holder 160 stored in the vertical position in the stocker 164 is taken out by the second transfer robot 174a, and the substrate holder 160 is rotated 90.degree. And placed in parallel on the substrate attachment / detachment table 162.

そして、前述の前処理（水洗前処理）を施した基板Ｗをこの基板脱着台１６２に載置された基板ホルダ１６０に周縁部をシールして装着する。そして、この基板Ｗを装着した基板ホルダ１６０を第２搬送ロボット１７４ａで２基同時に把持し、上昇させた後、ストッカ１６４まで搬送し、９０゜回転させて基板ホルダ１６０を垂直な状態となし、しかる後、下降させ、これによって、２基の基板ホルダ１６０をストッカ１６４に吊下げ保持（仮置き）する。これを順次繰返して、ストッカ１６４内に収容された基板ホルダ１６０に順次基板を装着し、ストッカ１６４の所定の位置に順次吊り下げ保持（仮置き）する。   Then, the substrate W that has been subjected to the above-described pretreatment (pretreatment with water washing) is mounted on the substrate holder 160 placed on the substrate detachment table 162 with its peripheral edge sealed. Then, the two substrate holders 160 loaded with the substrate W are simultaneously gripped by the second transport robot 174a, lifted, transported to the stocker 164, and rotated 90 ° to bring the substrate holder 160 into a vertical state. Thereafter, it is lowered, and the two substrate holders 160 are suspended and held (temporarily placed) on the stocker 164. This is repeated sequentially, and the substrate is sequentially mounted on the substrate holder 160 housed in the stocker 164, and is suspended and temporarily held (temporarily placed) at a predetermined position of the stocker 164.

一方、第２搬送ロボット１７４ｂにあっては、基板を装着しストッカ１６４に仮置きした基板ホルダ１６０を２基同時に把持し、上昇させた後、活性化処理装置１６６に搬送し、活性化処理槽１８３に入れた硫酸や塩酸などの薬液に基板を浸漬させてシード層表面の電気抵抗の大きい酸化膜をエッチングし、清浄な金属面を露出させる。更に、この基板を装着した基板ホルダ１６０を、前記と同様にして、第１水洗装置１６８ａに搬送し、この水洗槽１８４ａに入れた純水で基板の表面を水洗する。   On the other hand, in the second transfer robot 174b, two substrate holders 160, which are mounted with substrates and temporarily placed on the stocker 164, are simultaneously gripped and raised, and then transferred to the activation processing device 166 to be activated. The substrate is immersed in a chemical solution such as sulfuric acid or hydrochloric acid placed in 183 to etch the oxide film having a large electrical resistance on the surface of the seed layer, thereby exposing a clean metal surface. Further, the substrate holder 160 mounted with the substrate is transported to the first water washing device 168a in the same manner as described above, and the surface of the substrate is washed with pure water placed in the water washing tank 184a.

水洗が終了した基板を装着した基板ホルダ１６０を、前記と同様にしてめっき装置１７０に搬送し、めっき槽１８６内のめっき液１８８に浸漬させた状態でめっき槽１８６に吊り下げ支持することで、基板Ｗの表面にめっき処理を施す。そして、所定時間経過後、基板を装着した基板ホルダ１６０を第２搬送ロボット１７４ｂで再度保持してめっき槽１８６から引き上げてめっき処理を終了する。   In the same manner as described above, the substrate holder 160 mounted with the substrate that has been washed with water is transported to the plating apparatus 170 and suspended and supported in the plating tank 186 while being immersed in the plating solution 188 in the plating tank 186. The surface of the substrate W is plated. Then, after a predetermined time has elapsed, the substrate holder 160 with the substrate mounted thereon is held again by the second transfer robot 174b and pulled up from the plating tank 186, and the plating process is completed.

そして、前述と同様にして、基板ホルダ１６０を第２水洗装置１６８ｂまで搬送し、この水洗槽１８４ｂに入れた純水に浸漬させて基板の表面を純水洗浄する。しかる後、この基板を装着した基板ホルダ１６０を、前記と同様にして、ブロー装置１７２に搬送し、ここで、不活性ガスやエアーを基板に向けて吹き付けて、基板ホルダ１６０に付着しためっき液や水滴を除去する。しかる後、この基板を装着した基板ホルダ１６０を、前記と同様にして、ストッカ１６４の所定の位置に戻して吊下げ保持する。   Then, in the same manner as described above, the substrate holder 160 is transported to the second water washing device 168b and immersed in pure water placed in the water washing tank 184b to clean the surface of the substrate with pure water. Thereafter, the substrate holder 160 mounted with the substrate is transported to the blower 172 in the same manner as described above, and here, an inert gas or air is blown toward the substrate to adhere the plating solution attached to the substrate holder 160. Remove water drops. Thereafter, the substrate holder 160 with the substrate mounted thereon is returned to a predetermined position of the stocker 164 and held in the same manner as described above.

第２搬送ロボット１７４ｂは、上記作業を順次繰り返し、めっきが終了した基板を装着した基板ホルダ１６０を順次ストッカ１６４の所定の位置に戻して吊下げ保持する。
一方、第２搬送ロボット１７４ａにあっては、めっき処理後の基板を装着しストッカ１６４に戻した基板ホルダ１６０を２基同時に把持し、前記と同様にして、基板脱着台１６２上に載置する。 The second transfer robot 174b sequentially repeats the above operations, and returns the substrate holder 160, on which the plated substrate is mounted, to the predetermined position of the stocker 164 in a suspended manner.
On the other hand, in the second transfer robot 174a, the two substrate holders 160 to which the plated substrate is mounted and returned to the stocker 164 are simultaneously grasped and placed on the substrate detachment table 162 in the same manner as described above. .

そして、清浄空間１１４内に配置された第１搬送ロボット１２８は、この基板脱着台１６２上に載置された基板ホルダ１６０から基板を取出し、いずれかの洗浄・乾燥装置１２４に搬送する。そして、この洗浄・乾燥装置１２４で、表面を上向きにして水平に保持した基板を、純水等で洗浄し、高速回転させてスピン乾燥させた後、この基板を第１搬送ロボット１２８でロード・アンロードポート１２０に搭載した基板カセットに戻して、一連のめっき処理を完了する。これにより、図１１（ｂ）に示すように、ビアホール３及びトレンチ４内に銅を充填するとともに、絶縁膜２上に銅膜６を堆積させた基板Ｗが得られる。   Then, the first transfer robot 128 disposed in the clean space 114 takes out the substrate from the substrate holder 160 placed on the substrate attachment / detachment table 162 and transfers it to one of the cleaning / drying devices 124. Then, the substrate held horizontally with the cleaning / drying device 124 is cleaned with pure water or the like, spin-dried by high-speed rotation, and then loaded / removed by the first transfer robot 128. Returning to the substrate cassette mounted on the unload port 120, a series of plating processes is completed. As a result, as shown in FIG. 11B, a substrate W is obtained in which the via hole 3 and the trench 4 are filled with copper and the copper film 6 is deposited on the insulating film 2.

そして、前述のようにしてスピン乾燥させた基板Ｗを、その後、化学的機械的研磨（ＣＭＰ）装置に搬送し、化学的機械的研磨（ＣＭＰ）により、絶縁膜２上の銅膜６、シード層７及びバリア層５を除去して、ビアホール３及びトレンチ４に充填させた銅膜６の表面と絶縁膜２の表面とをほぼ同一平面にする。これにより、図１１（ｃ）に示すように、銅膜６からなる配線を形成する。   The substrate W spin-dried as described above is then transferred to a chemical mechanical polishing (CMP) apparatus, and the copper film 6 and seeds on the insulating film 2 are seeded by chemical mechanical polishing (CMP). The layer 7 and the barrier layer 5 are removed so that the surface of the copper film 6 filled in the via hole 3 and the trench 4 and the surface of the insulating film 2 are substantially flush with each other. As a result, as shown in FIG. 11C, a wiring made of the copper film 6 is formed.

次に、図１２を参照して、内部に上下に貫通する複数の銅からなるビアプラグを有するインタポーザまたはスペーサの製造例を説明する。図１２（ａ）に示すように、シリコン等からなる基材５１０の表面にＳｉＯ２等からなる絶縁膜５１２を堆積し、例えばリソグラフィ・エッチング技術により、内部に上方に開口する複数のビアホール５１４を形成した基板Ｗを用意する。このビアホール５１４の直径ｄは、例えば１０〜２０μｍで、深さｈは、例えば７０〜１５０μｍである。そして、図１２（ｂ）に示すように、この基板Ｗの表面にＴａＮ等からなるバリア層５１６、該バリア層５１６の表面に電気めっきの給電層としての（銅）シード層５１８をスパッタリング等で形成する。 Next, an example of manufacturing an interposer or spacer having a plurality of copper via plugs penetrating vertically inside and below will be described with reference to FIG. As shown in FIG. 12A, an insulating film 512 made of SiO 2 or the like is deposited on the surface of a substrate 510 made of silicon or the like, and a plurality of via holes 514 opened upward are formed therein by, for example, lithography / etching technology. A formed substrate W is prepared. The diameter d of the via hole 514 is, for example, 10 to 20 μm, and the depth h is, for example, 70 to 150 μm. Then, as shown in FIG. 12B, a barrier layer 516 made of TaN or the like is formed on the surface of the substrate W, and a (copper) seed layer 518 as a power feeding layer for electroplating is formed on the surface of the barrier layer 516 by sputtering or the like. Form.

そして、前述と同様にして、基板Ｗの表面に銅めっきを施すことで、図１２（ｃ）に示すように、基板Ｗのビアホール５１４内に銅（めっき膜）を充填するとともに、絶縁膜５１２の表面に銅膜５２０を堆積させる。   Then, in the same manner as described above, copper plating is applied to the surface of the substrate W, so that the via hole 514 of the substrate W is filled with copper (plating film) as shown in FIG. A copper film 520 is deposited on the surface.

その後、図１２（ｄ）に示すように、化学的機械的研磨（ＣＭＰ）等により、絶縁膜５１２上の余剰な銅膜５２０，シード層５１８及びバリア層５１６を除去し、同時に、ビアホール５１４内に充填した銅の底面が外部に露出するまで基材５１０の裏面側を研磨除去する。これによって、上下に貫通する銅からなる複数のビアプラグ５２２を内部に有するインタポーザまたはスペーサを完成させる。   Thereafter, as shown in FIG. 12D, the excess copper film 520, seed layer 518 and barrier layer 516 on the insulating film 512 are removed by chemical mechanical polishing (CMP) or the like, and at the same time, in the via hole 514. The back side of the substrate 510 is polished and removed until the bottom surface of the copper filled in is exposed to the outside. Thus, an interposer or spacer having a plurality of via plugs 522 made of copper penetrating vertically is completed.

本発明のめっき装置を使用した銅めっきを行うことで、例えば直径ｄが１０〜２０μｍで、深さｈが７０〜１５０μｍ程度の、アスペスト比が高く、深さが深いビアホールにあっても、例えば５時間程度で、ボイド等の欠陥のない、銅（めっき膜）の埋込みが行えることが確かめられている。   By performing copper plating using the plating apparatus of the present invention, for example, even in a via hole having a high aspect ratio and a deep depth of about 10 to 20 μm in diameter d and about 70 to 150 μm in depth h, It has been confirmed that copper (plating film) can be embedded without defects such as voids in about 5 hours.

この例によれば、めっき空間１１６内での基板の受渡しをめっき空間１１６内に配置した第２搬送ロボット１７４ａ，１７４ｂで、清浄空間１１４内での基板の受渡しを該清浄空間１１４内に配置した第１搬送ロボット１２８でそれぞれ行うことで、基板の前処理、めっき処理及びめっきの後処理の全めっき工程を連続して行うめっき処理装置の内部における基板周りの清浄度を向上させるとともに、めっき処理装置としてのスループットを向上させ、更にめっき処理装置の付帯設備の負荷を軽減して、めっき処理装置としてのより小型化を図ることができる。   According to this example, the second transfer robots 174a and 174b in which the delivery of the substrate in the plating space 116 is arranged in the plating space 116, the delivery of the substrate in the clean space 114 is arranged in the clean space 114. By performing each with the 1st conveyance robot 128, while improving the cleanliness around the board | substrate in the inside of the plating processing apparatus which performs all the plating processes of pre-processing of a board | substrate, a plating process, and the post-process of plating, and a plating process It is possible to improve the throughput as the apparatus and further reduce the load of the incidental equipment of the plating processing apparatus, thereby further downsizing the plating processing apparatus.

この例にあっては、めっき処理を行うめっき装置１７０として、フットプリントの小さいめっき槽１８６を有するものを使用することで、多数のめっき槽１８６を有するめっき装置の更なる小型化を図るとともに、工場付帯設備負荷をより軽減することができる。なお、図５において２台設置されている洗浄・乾燥装置１２４の一方を、前処理装置に置換てもよい。   In this example, as the plating apparatus 170 for performing the plating process, by using the one having the plating tank 186 with a small footprint, the plating apparatus having a large number of plating tanks 186 is further miniaturized, It is possible to further reduce the load on factory facilities. Note that one of the two cleaning / drying devices 124 installed in FIG. 5 may be replaced with a pretreatment device.

図１３は、本発明の他の実施の形態のめっき装置を示す。このめっき装置にあっては、パドル２２０としてめっき液噴射ノズルを有さないものを使用し、めっき液噴射ノズルを備えることに伴って必要となる、めっき液供給ライン等の設備を省略している。その他の構成は、図７乃至図９に示す例と同様である。これにより、構造の簡素化を図ることができる。   FIG. 13 shows a plating apparatus according to another embodiment of the present invention. In this plating apparatus, a paddle 220 that does not have a plating solution injection nozzle is used, and facilities such as a plating solution supply line that are required when the plating solution injection nozzle is provided are omitted. . Other configurations are the same as those shown in FIGS. Thereby, simplification of a structure can be achieved.

従来のめっき装置の一例を示す概略斜視図である。It is a schematic perspective view which shows an example of the conventional plating apparatus. 従来のめっき装置の他の例を示す概略斜視図である。It is a schematic perspective view which shows the other example of the conventional plating apparatus. 従来のめっき装置の更に他の例を示す概略斜視図である。It is a schematic perspective view which shows the other example of the conventional plating apparatus. 従来のめっき装置でめっきを行った時における金属膜の埋込み状態の概要を示す図である。It is a figure which shows the outline | summary of the embedding state of the metal film when plating with the conventional plating apparatus. 本発明の実施の形態のめっき装置を備えためっき処理設備の全体配置図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an overall layout diagram of a plating processing facility provided with a plating apparatus according to an embodiment of the present invention. 図５に示すめっき処理設備のめっき空間内に備えられている搬送ロボットの概要図である。FIG. 6 is a schematic diagram of a transfer robot provided in the plating space of the plating processing facility shown in FIG. 5. 図５に示すめっき処理設備に備えられているめっき装置の概略断面図である。It is a schematic sectional drawing of the plating apparatus with which the plating processing equipment shown in FIG. 5 is equipped. 図７に示すめっき装置のめっき槽の周辺における配管を示す図である。It is a figure which shows the piping in the periphery of the plating tank of the plating apparatus shown in FIG. 図７に示すめっき装置における基板、パドル、調整板及びカソードの関係を示す平面図である。It is a top view which shows the relationship between the board | substrate in the plating apparatus shown in FIG. 7, a paddle, an adjustment board, and a cathode. 図５に示すめっき装置のアノードと基板との間に印加する電圧の例を示すグラフである。It is a graph which shows the example of the voltage applied between the anode of the plating apparatus shown in FIG. 5, and a board | substrate. 銅配線基板Ｗの一製造例を工程順に示す図である。It is a figure which shows one manufacture example of the copper wiring board W in order of a process. 内部に上下に貫通する複数の銅からなるビアプラグを有するインタポーザまたはスペーサの製造例を工程順に示す図である。It is a figure which shows the manufacture example of the interposer or spacer which has a via plug which consists of several copper penetrated up and down inside in order of a process. 本発明の他の実施の形態のめっき装置の概略断面図である。It is a schematic sectional drawing of the plating apparatus of other embodiment of this invention.

符号の説明Explanation of symbols

１１４ 清浄空間
１１６ めっき空間
１２０ ロード・アンロードポート
１２２ アライナ
１２４ 洗浄・乾燥装置
１２６ 前処理装置
１２８ 搬送ロボット
１６０ 基板ホルダ
１６２ 基板脱着台
１６４ ストッカ
１６６ 活性化処理装置
１６８ａ，１６８ｂ 水洗装置
１７０ めっき装置
１７２ ブロー装置
１７４ａ，１７４ｂ 搬送ロボット
１８０ アーム
１８２ 基板ホルダ保持部
１８３ 活性化処理槽
１８４ａ，１８４ｂ 水洗槽
１８６ めっき槽
１８８ めっき液
１９０ めっき液排出ライン
１９２ めっき液供給ライン
１９４，２０８ ポンプ
１９６ 流量計
１９８，２０２，２０６ 流量調整バルブ
２０４ フィルタ
２１０ 冷却器
２１２ めっき液循環ライン
２１４ アノード
２１６ アノードホルダ
２１８ 調整板
２２０ パドル（めっき液攪拌部）
２２２ パドルシャフト
２２４ めっき液噴射ノズル（めっき液攪拌部）
２３０ めっき電源
２５０ 制御部 114 Clean space 116 Plating space 120 Load / unload port 122 Aligner 124 Cleaning / drying device 126 Pre-processing device 128 Transfer robot 160 Substrate holder 162 Substrate demounting table 164 Stocker 166 Activation processing devices 168a and 168b Washing device 170 Plating device 172 Blow Apparatus 174a, 174b Transfer robot 180 Arm 182 Substrate holder holding part 183 Activation treatment tank 184a, 184b Washing tank 186 Plating tank 188 Plating solution 190 Plating solution discharge line 192 Plating solution supply line 194, 208 Pump 196 Flowmeters 198, 202, 206 Flow rate adjustment valve 204 Filter 210 Cooler 212 Plating solution circulation line 214 Anode 216 Anode holder 218 Adjustment plate 220 Paddle (Plating solution stirring part)
222 Paddle shaft 224 Plating solution injection nozzle (Plating solution stirring section)
230 Plating power supply 250 Control unit

Claims (8)

めっき液を保持するめっき槽と、
被めっき材を保持して該被めっき材に通電し、被めっき材の被めっき面を前記めっき槽内のめっき液に接触させるホルダと、
前記めっき槽内のめっき液に浸漬させて配置されるアノードと、
前記アノードと前記ホルダで保持した被めっき材との間に配置され、前記めっき槽内のめっき液を攪拌するめっき液攪拌部と、
前記被めっき材と前記アノードとの間に電圧を周期的に印加するめっき電源を有し、
前記被めっき材と前記アノードとの間に電圧が印加されていない時に前記めっき液攪拌部によるめっき液の攪拌を行い、前記被めっき材と前記アノードとの間に電圧が印加されている時に前記めっき液攪拌部によるめっき液の攪拌を停止することを特徴とするめっき装置。 A plating tank for holding a plating solution;
A holder for holding the material to be plated and energizing the material to be plated, and bringing the surface to be plated into contact with the plating solution in the plating tank;
An anode disposed by being immersed in a plating solution in the plating tank;
A plating solution stirring unit that is disposed between the anode and the material to be plated held by the holder and stirs the plating solution in the plating tank;
A plating power source for periodically applying a voltage between the material to be plated and the anode;
The plating solution is stirred by the plating solution stirring unit when no voltage is applied between the material to be plated and the anode, and the voltage is applied when the voltage is applied between the material to be plated and the anode. A plating apparatus, wherein stirring of the plating solution by the plating solution stirring unit is stopped. 前記めっき液攪拌部は、前記ホルダで保持した被めっき材の被めっき面に平行に往復動するパドルからなることを特徴とする請求項１記載のめっき装置。   The plating apparatus according to claim 1, wherein the plating solution agitating unit is composed of a paddle that reciprocates in parallel with a surface to be plated of a material to be plated held by the holder. 前記めっき液攪拌部は、前記ホルダで保持した被めっき材の被めっき面に向けてめっき液を噴射するめっき液噴射ノズルからなることを特徴とする請求項１または２記載のめっき装置。   The plating apparatus according to claim 1, wherein the plating solution stirring unit includes a plating solution spray nozzle that sprays a plating solution toward a surface to be plated of a material to be plated held by the holder. 前記被めっき材と前記アノードとの間に、電流密度が０．１〜０．８Ａ／ｄｍ２となるように電圧を印加することを特徴とする請求項１乃至３のいずれかに記載のめっき装置。 Wherein between the anode and the material to be plated, the plating according to any one of claims 1 to 3, characterized in that current density is applied a voltage such that the 0.1~0.8A / dm 2 apparatus. めっき槽内のめっき液中に被めっき材とアノードとを互いに対峙させて配置し、
前記被めっき材と前記アノードとの間に電圧を周期的に印加し、
前記被めっき材と前記アノードとの間に電圧が印加されてない時に前記被めっき材と前記アノードとの間のめっき液を攪拌し、前記被めっき材と前記アノードとの間に電圧が印加されている時に前記被めっき材と前記アノードとの間のめっき液の攪拌を停止することを特徴とするめっき方法。 Place the material to be plated and the anode facing each other in the plating solution in the plating tank,
A voltage is periodically applied between the material to be plated and the anode,
When a voltage is not applied between the material to be plated and the anode, the plating solution between the material to be plated and the anode is stirred, and a voltage is applied between the material to be plated and the anode. The plating method is characterized in that stirring of the plating solution between the material to be plated and the anode is stopped during 前記被めっき材と前記アノードとの間に配置したパドルを該被めっき材と平行に往復動させてめっき液を攪拌し、該パドルの移動を停止させてめっき液の攪拌を停止することを特徴とする請求項５記載のめっき方法。   A paddle disposed between the material to be plated and the anode is reciprocated in parallel with the material to be plated to stir the plating solution, and stops the movement of the paddle to stop the stirring of the plating solution. The plating method according to claim 5. 前記被めっき材と前記アノードとの間に配置しためっき液噴射ノズルから該被めっき材に向けてめっき液を噴射してめっき液を攪拌し、該めっき液噴射ノズルからのめっき液の噴射を停止してめっき液の攪拌を停止することを特徴とする請求項５または６記載のめっき方法。   The plating solution is sprayed from the plating solution spray nozzle arranged between the material to be plated and the anode toward the material to be plated to stir the plating solution, and the spray of the plating solution from the plating solution spray nozzle is stopped. The plating method according to claim 5 or 6, wherein stirring of the plating solution is stopped. 前記被めっき材と前記アノードとの間に、電流密度が０．１〜０．８Ａ／ｄｍ２となるように電圧を印加することを特徴とする請求項５乃至７のいずれかに記載のめっき方法。 The plating according to claim 5, wherein a voltage is applied between the material to be plated and the anode so that a current density is 0.1 to 0.8 A / dm 2. Method.
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CN115244226A (en) * 2021-12-06 2022-10-25 株式会社荏原制作所 Plating method and plating apparatus
WO2023105561A1 (en) * 2021-12-06 2023-06-15 株式会社荏原製作所 Plating method and plating apparatus

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