JP2006032387A - Led lamp - Google Patents

Led lamp Download PDF

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JP2006032387A
JP2006032387A JP2004204456A JP2004204456A JP2006032387A JP 2006032387 A JP2006032387 A JP 2006032387A JP 2004204456 A JP2004204456 A JP 2004204456A JP 2004204456 A JP2004204456 A JP 2004204456A JP 2006032387 A JP2006032387 A JP 2006032387A
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phosphor
led lamp
led
resin
resin cover
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JP4932144B2 (en
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Masuji Tazaki
益次 田崎
Akira Ichikawa
明 市川
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Asahi Rubber Inc
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Asahi Rubber Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED lamp capable of eliminating leakage light from a resin cover containing a phosphor and eliminating a variation in color tones. <P>SOLUTION: The LED lamp is formed by converting a luminescent color by passing light from an LED chip through the resin cover containing a phosphor or a wavelength absorbent has a binder layer. The LED lamp comprises a silicone-based adhesive or an epoxy-based adhesive containing the phosphor or the wavelength absorbent and inorganic particles formed between the resin cover and the light emitting diode or an enclosure enclosing the light emitting diode. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、ＬＥＤを利用したバックライト光源、ディスプレイ、照明など各種光源や光センサに利用されるＬＥＤランプに関わり、特に、ＬＥＤの発光色とは異なる発光色のＬＥＤランプを得るときの構成に関するものである。   The present invention relates to LED lamps used for various light sources such as a backlight light source, a display, and an illumination using an LED, and an optical sensor, and more particularly, to a configuration for obtaining an LED lamp having an emission color different from the emission color of the LED. Is.

発光ダイオード（ＬＥＤ：Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ）は、光を放射する半導体発光素子であり、電気エネルギーを紫外線、可視光、赤外光などに変換するもので、寿命が長く、信頼性も高く、光源として用いた場合には、その交換作業も軽減できることから、携帯通信機器、パーソナルコンピュータ周辺機器、ＯＡ機器、家庭用電気機器、オーディオ機器、各種スイッチ、バックライト用光源、掲示板等の各種表示装置などの構成部品として広く使用されている。更に、車載機器の表示部のバックライト照明用光源としてＬＥＤランプが注目され、メーター、ヒーターコントロールパネル、オーディオなどの表示部のバックライト照明に利用されており、特に白色又は青緑領域において高輝度で発光するＬＥＤランプが求められている。   A light emitting diode (LED) is a semiconductor light emitting element that emits light, and converts electrical energy into ultraviolet light, visible light, infrared light, etc., and has a long life, high reliability, and a light source. When used, the replacement work can be reduced, so that portable communication devices, personal computer peripheral devices, OA devices, household electrical devices, audio devices, various switches, backlight light sources, various display devices such as bulletin boards, etc. Widely used as a component. In addition, LED lamps are attracting attention as a backlight illumination light source for in-vehicle device displays, and are used for backlight illumination in displays such as meters, heater control panels, and audio, especially in the white or blue-green region. There is a need for LED lamps that emit light.

このようなＬＥＤランプは、各種の蛍光体粉末を、半導体発光素子を封止する透明樹脂中に含有させることにより、ＬＥＤから放射される光の色を変化させることにより得ることが可能である。例えば、青色ＬＥＤからの光を透明樹脂中の蛍光体に当て、この蛍光体の働きによって青色ＬＥＤの発光波長を白色や緑色の波長に変換して放射している。   Such an LED lamp can be obtained by changing the color of light emitted from the LED by including various phosphor powders in a transparent resin that seals the semiconductor light emitting element. For example, light from a blue LED is applied to a phosphor in a transparent resin, and the emission wavelength of the blue LED is converted into a white or green wavelength by the action of the phosphor and emitted.

このようなＬＥＤランプの構造としては、図４に示されるように、リード１、２、青色光を発光する半導体素子３、半導体発光素子３とリード２とを電気的に接続するリード細線４を、封止材５で砲弾型に封止した構造の、いわゆる砲弾タイプの発光ダイオードの半導体発光素子３上に蛍光層７を設けて半導体発光素子３等と共に封止したものが知られている。また、図５に示されるように、上面が開口した箱型の発光体収容部材６の内部に青色の光を発光する半導体発光素子３やリード細線４、４を収容し、これらを接続して、ＬＥＤ収容部材６内部を封止材５で封止した構造の、いわゆるチップ型の発光ダイオードの半導体発光素子３上に蛍光層７を設けて半導体発光素子３等とともに封止したものがある。蛍光層７を半導体発光素子３上に設ける場合、蛍光体をそのまま用いてもバインダーと共に用いてもよい。いずれにせよ、図４及び５に示されるように、蛍光層は半導体発光素子と共に封止材中に封止されることになる。   As shown in FIG. 4, the structure of such an LED lamp includes leads 1 and 2, a semiconductor element 3 that emits blue light, and a lead wire 4 that electrically connects the semiconductor light emitting element 3 and the lead 2. It is known that a fluorescent layer 7 is provided on a semiconductor light-emitting element 3 of a so-called bullet-type light emitting diode and is sealed together with the semiconductor light-emitting element 3 or the like, which is sealed in a bullet shape with a sealing material 5. Further, as shown in FIG. 5, the semiconductor light emitting element 3 that emits blue light and the lead thin wires 4 and 4 are accommodated inside the box-shaped light emitter accommodating member 6 whose upper surface is open, and these are connected. In some cases, a fluorescent layer 7 is provided on a semiconductor light emitting element 3 of a so-called chip-type light emitting diode and the LED housing member 6 is sealed together with the semiconductor light emitting element 3 or the like. When the fluorescent layer 7 is provided on the semiconductor light emitting element 3, the phosphor may be used as it is or with a binder. In any case, as shown in FIGS. 4 and 5, the fluorescent layer is sealed together with the semiconductor light emitting element in the sealing material.

しかしながら、このような封止材による蛍光層では、蛍光層の膜厚にばらつきがあり、ＬＥＤランプ全体からの光の色調を均一に管理することが困難である。そこで、このような封止材による蛍光層に替えて、厚さが一定の樹脂カバー中に蛍光体を含有した蛍光層を用いることも提案されている。   However, in the fluorescent layer using such a sealing material, the thickness of the fluorescent layer varies, and it is difficult to uniformly manage the color tone of light from the entire LED lamp. Therefore, it has been proposed to use a fluorescent layer containing a phosphor in a resin cover having a constant thickness, instead of the fluorescent layer made of such a sealing material.

このような樹脂カバーを用いたＬＥＤランプの構造としては、図６に示されるようなものが知られている。一方のリード１に設けられたカップ部内には、例えば青色の発光色を有するＬＥＤチップ３が設置され、他方のリード２と金線による配線が行われている。前記カップ部内には、前記ＬＥＤチップ３を覆うようにしてＹＡＧ（イットリウム−アルミニウム−ガーネット）などの蛍光体を含有する樹脂カバー８が形成され、更に前記樹脂カバー８を覆って封止樹脂によるケース９が形成されている。   As a structure of an LED lamp using such a resin cover, a structure as shown in FIG. 6 is known. In a cup portion provided on one lead 1, for example, an LED chip 3 having a blue emission color is installed, and wiring with the other lead 2 and a gold wire is performed. A resin cover 8 containing a phosphor such as YAG (yttrium-aluminum-garnet) is formed in the cup portion so as to cover the LED chip 3, and further a case made of a sealing resin covering the resin cover 8 9 is formed.

また、図７に示されるようなチップ型のＬＥＤランプにおいても同様の樹脂カバーを設置することができる。ヒートシンクに形成されたカップ部内にＬＥＤチップ３が設置され、他方のリード２と金線による配線が行われている。前記カップ部内には、前記チップを覆うようにして蛍光体を含有した樹脂カバー８が形成され、更に前記樹脂カバー８を封止樹脂により封止され、前記封止樹脂上には、樹脂で形成される光学レンズ９が配置される。   A similar resin cover can also be installed in a chip-type LED lamp as shown in FIG. The LED chip 3 is installed in a cup portion formed on the heat sink, and wiring with the other lead 2 and a gold wire is performed. A resin cover 8 containing a phosphor is formed in the cup portion so as to cover the chip, and the resin cover 8 is further sealed with a sealing resin, and formed on the sealing resin with a resin. An optical lens 9 is arranged.

最近では、図８に示されるように、ＬＥＤの電極との結合部が下向きにされ、ワイヤーボンディングなしに電極に直接ＬＥＤが接続されたフリップチップ型のＬＥＤも開発されている。この際、従来の基板は透明化されることで、全面にわたって光を取り出すことができる。このようなフリップチップ型のＬＥＤは、ワイヤーボンディングを必要としないため、小型化が可能となる。   Recently, as shown in FIG. 8, a flip chip type LED in which the coupling portion with the electrode of the LED is directed downward and the LED is directly connected to the electrode without wire bonding has been developed. At this time, the conventional substrate is made transparent so that light can be extracted over the entire surface. Such a flip-chip type LED does not require wire bonding, and thus can be miniaturized.

上記のＬＥＤランプにおいては、いずれの場合もＬＥＤチップ３からの光は理想的には全て樹脂カバー８を通過する。このとき、ＬＥＤチップからの光は樹脂カバー内の蛍光体の励起により、波長が変換されて白色光となる。したがって、ＬＥＤランプから外部に放射される光はＬＥＤチップからの光と蛍光体からの光とが混合された白色光となる。
特開２００３−３１８４４８号公報 特開２０００−１２９０９号公報 In any of the above LED lamps, ideally, all the light from the LED chip 3 passes through the resin cover 8. At this time, the wavelength of the light from the LED chip is converted into white light by the excitation of the phosphor in the resin cover. Therefore, the light emitted from the LED lamp to the outside is white light in which the light from the LED chip and the light from the phosphor are mixed.
JP 2003-318448 A JP 2000-12909 A

しかしながら、上記のような樹脂カバーを有するＬＥＤランプにおいて、ＬＥＤチップからの光の一部は樹脂カバーを通過せずに漏れてしまうことがある。特に、チップ型の場合には構造的に樹脂カバーがＬＥＤの全体を覆うことが困難であるため光漏れが発生しやすい。この光漏れは、本来、ＬＥＤチップからの光と波長変換された白色光の混合色に加えて発生するために、ＬＥＤランプの色調管理の不安定化の原因となり、生産品質の低下を招いてしまうという問題を生じている。   However, in the LED lamp having the resin cover as described above, part of the light from the LED chip may leak without passing through the resin cover. In particular, in the case of a chip type, it is difficult for the resin cover to cover the entire LED structurally, and thus light leakage is likely to occur. This light leakage originally occurs in addition to the mixed color of the light from the LED chip and the wavelength-converted white light, which causes instability of the color management of the LED lamp and causes a decrease in production quality. The problem of end.

本発明は、上述した課題を解決するために、ＬＥＤチップからの光を蛍光体又は波長吸収材を含む樹脂カバーを通過させることで発光色を変換して成るＬＥＤランプにおいて、前記樹脂カバーとＬＥＤチップ又はＬＥＤチップを封止する封止樹脂との間に蛍光体又は波長吸収材を混合したバインダー層を形成することにより、光漏れを防ぐものである。これにより、光漏れを原因とするＬＥＤランプの色調の不安定化を原因とする品質低下という問題を解決することができる。   In order to solve the above-described problems, the present invention provides an LED lamp in which light emitted from an LED chip is converted through a resin cover containing a phosphor or a wavelength absorbing material to change the emission color. By forming a binder layer in which a phosphor or a wavelength absorbing material is mixed with a sealing resin for sealing the chip or the LED chip, light leakage is prevented. Thereby, it is possible to solve the problem of quality degradation caused by instability of the color tone of the LED lamp caused by light leakage.

特に、フリップチップ型のＬＥＤにおいては、ワイヤーボンディングが必要とされないため、本発明のバインダー層及び蛍光体入り樹脂キャップによりＬＥＤ近傍に蛍光体を配置する反射板内での光の散乱を抑制することができる。これによって、従来よりも、極めて薄型の白色ＬＥＤランプを提供することができる。   In particular, since flip-chip type LEDs do not require wire bonding, the binder layer and phosphor-containing resin cap of the present invention suppress light scattering in a reflector plate in which phosphors are arranged near the LEDs. Can do. As a result, it is possible to provide a white LED lamp that is much thinner than before.

本発明の具体的構成は以下のとおりである。
（１）ＬＥＤチップからの光を蛍光体又は波長吸収剤を含む樹脂カバーを通過させることで発光色を変換して成るＬＥＤランプにおいて、前記樹脂カバーと発光ダイオードまたは発光ダイオードを封止する封止体の間に蛍光体又は波長吸収剤を含有するバインダー層が形成されていることを特徴とするＬＥＤランプ。
（２）前記バインダー層は、シリコーン系接着剤、エポキシ系接着剤及び無機微粒子から選ばれる結着剤並びに蛍光体又は波長吸収剤を含むことを特徴とする上記（１）に記載のＬＥＤランプ。
（３）前記ＬＥＤはフリップチップ型発光ダイオードであることを特徴とする上記（１）又は（２）に記載のＬＥＤランプ。
（４）前記樹脂カバーは、透明樹脂に蛍光体又は波長吸収剤を添加してキャップ状に形成されたものであることを特徴とする上記（１）ないし（３）のいずれかに記載のＬＥＤランプ。
（５）前記樹脂カバーの外側に樹脂により形成されたレンズ部を有する上記（１）ないし（４）のいずれかに記載のＬＥＤランプ。 The specific configuration of the present invention is as follows.
(1) In an LED lamp formed by converting light emission color by passing light from an LED chip through a resin cover containing a phosphor or a wavelength absorber, sealing the resin cover and the light emitting diode or light emitting diode An LED lamp, wherein a binder layer containing a phosphor or a wavelength absorber is formed between bodies.
(2) The LED lamp according to (1), wherein the binder layer includes a binder selected from a silicone-based adhesive, an epoxy-based adhesive, and inorganic fine particles, and a phosphor or a wavelength absorber.
(3) The LED lamp according to (1) or (2), wherein the LED is a flip-chip type light emitting diode.
(4) The LED according to any one of (1) to (3), wherein the resin cover is formed in a cap shape by adding a phosphor or a wavelength absorber to a transparent resin. lamp.
(5) The LED lamp according to any one of the above (1) to (4), which has a lens portion formed of resin on the outside of the resin cover.

次に、本発明の実施形態を図面に基づいて詳細に説明する。図１に示されるように、本発明のＬＥＤランプ１はリードフレーム２，３とＬＥＤチップ４と、樹脂カバー５と樹脂レンズ６が設けられるものであり、前記ＬＥＤチップ４を覆う樹脂カバー５によって、ＬＥＤチップ４の本来の発光色を白色光に変換する。   Next, embodiments of the present invention will be described in detail with reference to the drawings. As shown in FIG. 1, the LED lamp 1 of the present invention is provided with lead frames 2 and 3, an LED chip 4, a resin cover 5 and a resin lens 6, and the resin cover 5 that covers the LED chip 4 is provided. The original emission color of the LED chip 4 is converted into white light.

本発明の樹脂カバーは、射出成形、ポッティング成形などで予め適宜な形状として成形することができる。樹脂基材としては、透光性のポリエステル樹脂、アクリル樹脂、ウレタン、ナイロン、シリコーン樹脂、塩化ビニル、ポリスチロール、ベークライト等樹脂やシリコーンゴム等の透明性ゴムを用いることができる。   The resin cover of the present invention can be molded into an appropriate shape in advance by injection molding, potting molding or the like. As the resin base material, translucent polyester resin, acrylic resin, urethane, nylon, silicone resin, vinyl chloride, polystyrene, bakelite and other transparent rubber such as silicone rubber can be used.

本発明の樹脂カバーに配合される蛍光体としては、無機蛍光体、顔料、有機蛍光染料、擬似顔料などが挙げられ、無機蛍光体としては、Ｙ3−XＧａXＡl5Ｏ12：Ｃｅ（０≦ｘ≦３）、ＢａＭｇＡｌ16Ｏ27：Ｅｕ、（Ｓｒ，Ｃａ，Ｂａ）5（ＰＯ4）3Ｃｌ：Ｅｕ、ＢａＭｇＡｌ16Ｏ27：Ｅｕ、Ｍｎ、Ｚｎ2ＧｅＯ4：Ｍｎ、Ｙ2Ｏ2Ｓ：Ｅｕ、３．５ＭｇＯ・０．５ＭｇＦ2・ＧｅＯ2：Ｍｎ、Ｌａ2Ｏ2Ｓ：Ｅｕ、ＣａＳ：Ｅｕ、ＬｉＥｕＷ2Ｏ8など、顔料としてはフタロシアニン系、アゾ系、イソインドリノン系、キナクリドン系、レーキ顔料などの有機顔料やコバルトブルー、群青、酸化鉄などの無機顔料、有機蛍光染料としてはペリレン系、ナフタルイミド系、クマリン系、シアニン系、フラビン系、ローダミン系など、擬似顔料としてはプラスチックの粉末を蛍光性のある染料で着色した蛍光顔料などを好適に用いることができる。 Examples of the phosphor blended in the resin cover of the present invention include inorganic phosphors, pigments, organic fluorescent dyes, pseudo-pigments, and the like, and examples of the inorganic phosphor include Y 3 —X Ga X Al 5 O 12 : Ce ( 0 ≦ x ≦ 3), BaMgAl 16 O 27 : Eu, (Sr, Ca, Ba) 5 (PO 4 ) 3 Cl: Eu, BaMgAl 16 O 27 : Eu, Mn, Zn 2 GeO 4 : Mn, Y 2 O 2 S: Eu, 3.5MgO.0.5MgF 2 .GeO 2 : Mn, La 2 O 2 S: Eu, CaS: Eu, LiEuW 2 O 8 and the like, phthalocyanine, azo, and isoindolinone as pigments Organic pigments such as quinacridone and lake pigments, inorganic pigments such as cobalt blue, ultramarine, and iron oxide, and organic fluorescent dyes such as perylene, naphthalimide, coumarin, cyanine, flavin, and rhodamine As the pigment, a fluorescent pigment obtained by coloring a plastic powder with a fluorescent dye can be preferably used.

本発明で用いられる蛍光体の粒径は１０μｍ〜５０μｍの範囲が好ましく、より好ましくは２０μｍ〜３０μｍである。粒子が小さすぎると、相互に凝集しやすく、光の透過を妨げる傾向にある。   The particle size of the phosphor used in the present invention is preferably in the range of 10 μm to 50 μm, more preferably 20 μm to 30 μm. If the particles are too small, they tend to aggregate with each other and tend to hinder light transmission.

本発明のカバーとＬＥＤチップ又はＬＥＤチップを封止する封止体の間には、蛍光体又は波長吸収剤が配合されたバインダー層が形成される。   Between the cover of the present invention and the LED chip or the sealing body that seals the LED chip, a binder layer containing a phosphor or a wavelength absorber is formed.

このようなバインダー層は、シリコーン系接着剤、エポキシ系接着剤などの既製の接着剤に蛍光体又は波長吸収剤を配合して形成することができる。このような既成の接着剤に蛍光体を配合することによって、極めて簡易にバインダー層を形成することができる。   Such a binder layer can be formed by blending a phosphor or a wavelength absorber with a ready-made adhesive such as a silicone-based adhesive or an epoxy-based adhesive. A binder layer can be formed very easily by blending a phosphor with such an existing adhesive.

また、シリカ微粒子、アルミナ微粒子、低融点ガラス粒子、アルカリ土類金属のピロリン酸塩又は正りん酸塩粒子などを結合剤として、蛍光体又は波長吸収剤を配合してバインダー層を形成することができる。このような無機粒子の結合剤によってバインダー層を形成する場合は、結合効果を高めるために、スラリー状にして、蛍光物質を含めた液状物質として、ＬＥＤ又はＬＥＤを封止する封止体表面に塗布することによって形成することができる。塗布後、加熱してバインダー層に蛍光物質を固着するが、この加熱は、樹脂カバーを装着した状態で一体的に行うか、又は、加熱後バインダー層を固定した後樹脂カバーを装着する。加熱温度は、結合剤の種類によって、１５０〜３５０℃の間で適宜選択される。   In addition, a binder layer may be formed by blending phosphor or wavelength absorber with silica fine particles, alumina fine particles, low melting point glass particles, alkaline earth metal pyrophosphate or orthophosphate particles as a binder. it can. In the case of forming a binder layer with a binder of such inorganic particles, in order to enhance the binding effect, it is made into a slurry and is a liquid material including a fluorescent material on the surface of the sealing body that seals the LED or LED. It can be formed by coating. After application, the fluorescent material is fixed to the binder layer by heating, and this heating is performed integrally with the resin cover mounted, or the resin cover is mounted after fixing the binder layer after heating. The heating temperature is appropriately selected between 150 and 350 ° C. depending on the type of binder.

バインダー層には、蛍光体及び結合剤のほかに、拡散剤及び充填剤などを配合することができる。拡散剤は、粒径１ｎｍ以上５μｍ未満の粒子で、発光素子からの光を乱反射させ、色むらを防止する効果があり、また、充填剤としては粒径５μｍ以上１００μｍ以下の粒子である。これらの材料としては、酸化チタン、酸化アルミニウム、酸化ケイ素、チタン酸バリウム等が使用できる。   In addition to the phosphor and the binder, a diffusing agent and a filler can be blended in the binder layer. The diffusing agent is a particle having a particle size of 1 nm or more and less than 5 μm, and has an effect of irregularly reflecting light from the light emitting element to prevent color unevenness. The filler is a particle having a particle size of 5 μm or more and 100 μm or less. As these materials, titanium oxide, aluminum oxide, silicon oxide, barium titanate and the like can be used.

接着剤又は結合剤中への蛍光体の配合量としては、３０〜７０重量％が好ましいが、特に好ましくは、４０〜６０重量％がよい。本発明の樹脂カバーの形状は例えばキャップ状など前記ＬＥＤチップを覆う形状とするのが好ましい。   The blending amount of the phosphor in the adhesive or binder is preferably 30 to 70% by weight, particularly preferably 40 to 60% by weight. The resin cover of the present invention preferably has a shape that covers the LED chip, such as a cap.

本発明のＬＥＤランプは、必要に応じて、樹脂カバー又は樹脂カバーを封止する封止材の外側に集光機能を付するため樹脂レンズを備えることができる。このような樹脂レンズは、例えば、シリコーン樹脂組成物を硬化させることにより得ることができる。シリコーン樹脂組成物としては、特に、液状の付加反応硬化型のシリコーン樹脂組成物が好ましい。上記付加反応型のシリコーン樹脂組成物としては、熱硬化により透明なシリコーン樹脂を形成するものであれば特に制限されないが、例えば、オルガノポリシロキサンをベースポリマーとし、オルガノハイドロジェンポリシロキサン及び白金系触媒等の重金属系触媒を含むものが挙げられる。上記シリコーン樹脂組成物としては、信越化学工業株式会社製 ＫＥ１９３５（Ａ／Ｂ）、ＧＥ東芝シリコーン株式会社製 ＸＥ１４−０６２、ＸＥ１４−９０７、東レ・ダウ・コーニング・シリコーン株式会社製 ＳＨ６１０３、ＤＸ−３５−５４７等の市販品を用いることができる。   The LED lamp of this invention can be equipped with the resin lens in order to attach a condensing function to the outer side of the sealing material which seals a resin cover or a resin cover as needed. Such a resin lens can be obtained, for example, by curing a silicone resin composition. As the silicone resin composition, a liquid addition reaction curable silicone resin composition is particularly preferable. The addition reaction type silicone resin composition is not particularly limited as long as it forms a transparent silicone resin by heat curing. And those containing heavy metal catalysts such as Examples of the silicone resin composition include KE1935 (A / B) manufactured by Shin-Etsu Chemical Co., Ltd., XE14-062 and XE14-907 manufactured by GE Toshiba Silicone Co., Ltd., SH6103 and DX-35 manufactured by Toray Dow Corning Silicone Co., Ltd. Commercial products such as -547 can be used.

このような樹脂レンズとしては、フルネルレンズを用いれば、薄型の装置が提供できる。フルネルレンズとは、通常の凸レンズと同じ機能を有する細かい凹凸部を有する薄型のレンズである。   As such a resin lens, a thin device can be provided by using a fullnel lens. A fullnel lens is a thin lens having fine irregularities having the same function as a normal convex lens.

本発明の光学装置によれば、ＬＥＤチップからの光は、樹脂カバーとＬＥＤチップ又ＬＥＤチップを封止する封止体の間に、蛍光体を含有するバインダー層を形成することにより光の通路が完全に封止されるので、光漏れを防止することができる。したがって、ＬＥＤランプの色調管理を安定化することができ、生産品質の低下を防止することができる。   According to the optical device of the present invention, the light from the LED chip passes through the resin cover and the LED chip or a sealing body for sealing the LED chip by forming a binder layer containing a phosphor. Is completely sealed, so that light leakage can be prevented. Therefore, the color tone management of the LED lamp can be stabilized, and the production quality can be prevented from being lowered.

特に、フリップチップ型のＬＥＤにおいては、ワイヤーボンディングが必要とされないため、本発明のバインダー層及び蛍光体入り樹脂キャップによりＬＥＤ近傍に蛍光体を配置する反射板内での光の散乱を抑制することができる。これによって、光の利用効率を３０％以上高めることができるため、レンズの厚みを薄くすることができるなど、従来よりも、１／４〜１／５の薄型の白色ＬＥＤランプを提供することができる。   In particular, since flip-chip type LEDs do not require wire bonding, the binder layer and phosphor-containing resin cap of the present invention suppress light scattering in a reflector plate in which phosphors are arranged near the LEDs. Can do. As a result, the light utilization efficiency can be increased by 30% or more, and the thickness of the lens can be reduced. For example, it is possible to provide a white LED lamp that is 1/4 to 1/5 thinner than conventional ones. it can.

本発明の効果を具体的実施例に基づいて説明する。本発明は、これらの実施例によって限定されるものではない。   The effect of this invention is demonstrated based on a specific Example. The present invention is not limited by these examples.

［実施例１］
図１に示されるように、平坦なリード１、２両方にＬＥＤチップ３の電極面を金バンプ１０で直接実装されたフリップチップ型ＬＥＤランプを用意した。 [Example 1]
As shown in FIG. 1, a flip chip type LED lamp was prepared in which the electrode surface of the LED chip 3 was directly mounted on the flat leads 1 and 2 with gold bumps 10.

シリコーン樹脂（信越化学工業ＫＥ９６１Ｔ−Ｕ）に加硫剤０．５％及び蛍光体としてＹＡＧ蛍光体４０％を添加し分散させ、金型を用いてＬＥＤチップの形状に合わせ１ｍｍ角厚み０．２ｍｍのキャップ形状により１７０℃で１０分成形し、樹脂カバー７を得た。   Add 0.5% vulcanizing agent and 40% YAG phosphor as phosphor to silicone resin (Shin-Etsu Chemical KE961T-U), disperse, and match the shape of LED chip using a mold, 1mm square thickness 0.2mm The resin cover 7 was obtained by molding at 170 ° C. for 10 minutes according to the cap shape.

次に、室温硬化タイプシリコーン系接着剤にＹＡＧ蛍光体１０％を分散してバインダーを作成し、ＬＥＤチップに塗布した。上記で作成した蛍光体入り樹脂カバーをＬＥＤチップの上部からかぶせたところ、余分な接着剤がＬＥＤチップの下からはみ出し、樹脂カバーとＬＥＤチップの基板との隙間を封止した。接着剤を硬化させこれによって、極めて薄型の白色ＬＥＤランプを得ることができた。   Next, a binder was prepared by dispersing 10% of YAG phosphor in a room temperature curing type silicone adhesive and applied to the LED chip. When the phosphor-containing resin cover prepared above was covered from the top of the LED chip, excess adhesive protruded from the bottom of the LED chip, and the gap between the resin cover and the substrate of the LED chip was sealed. By curing the adhesive, an extremely thin white LED lamp could be obtained.

このＬＥＤランプに通電して色調を観察したところ、キャップ下部と基板の隙間から漏れていた青色の光が接着剤中のＹＡＧ蛍光体により波長変換され、均一でむらの無い色調が得られていることを確認した。   When this LED lamp was energized and the color tone was observed, the blue light leaking from the gap between the lower part of the cap and the substrate was wavelength-converted by the YAG phosphor in the adhesive, and a uniform and non-uniform color tone was obtained. It was confirmed.

［実施例２］
図２に示されるように、平坦なリード１上にＬＥＤチップ３が設置され、他方のリード２と金線４による配線が行われているチップ型ＬＥＤランプを用意した。 [Example 2]
As shown in FIG. 2, a chip-type LED lamp was prepared in which an LED chip 3 was installed on a flat lead 1 and wiring with the other lead 2 and gold wire 4 was performed.

また、シリコーン樹脂（信越化学工業ＫＥ９６１Ｔ−Ｕ）に加硫剤０．５％及び蛍光体としてＹＡＧ蛍光体４０％を添加し分散させ、厚み０．２ｍｍの皿型形状の樹脂カバー７を成形した。   Further, 0.5% vulcanizing agent and 40% YAG phosphor as a phosphor were added and dispersed in silicone resin (Shin-Etsu Chemical KE961T-U) to form a dish-shaped resin cover 7 having a thickness of 0.2 mm. .

次に、ニトロセルロース８０ｗｔ％とアルミナ２０ｗｔ％からなるスラリーに、蛍光体としてペリレン系集光性蛍光染料である「Ｌｕｍｏｇｅｎ Ｙｅｌｌｏｗ Ｆ」（ＢＡＳＦ製）を４０％含有させ、前記エポキシ封止体表面に塗布した後、前記樹脂カバー７をのせ、２１０℃で３０分間加熱硬化させた。これによって、ＬＥＤ全体が蛍光体を含有するバインダー及び上記樹脂カバー７によって覆うことができた。   Next, a slurry composed of 80 wt% of nitrocellulose and 20 wt% of alumina contains 40% of “Lumogen Yellow F” (manufactured by BASF), which is a perylene-based condensing fluorescent dye, as a phosphor. After coating, the resin cover 7 was placed and cured by heating at 210 ° C. for 30 minutes. As a result, the entire LED could be covered with the binder containing the phosphor and the resin cover 7.

次いで、カバーの上側を透光性のエポキシ樹脂封止材５によって封止し、さらにその上にシリコーン系の樹脂で形成したレンズを接着剤により装着した。   Next, the upper side of the cover was sealed with a translucent epoxy resin sealing material 5, and a lens formed of a silicone-based resin was further mounted thereon with an adhesive.

この発光ダイオードを通電して、色調を観察したところ、均一でむらのない色調が得られていることを確認した。   When this light emitting diode was energized and the color tone was observed, it was confirmed that a uniform and uniform color tone was obtained.

［実施例３］
実施例２と同様のチップ型ＬＥＤを用意した。 [Example 3]
A chip-type LED similar to that of Example 2 was prepared.

次に、ニトロセルロース８０ｗｔ％とアルミナ２０ｗｔ％からなるスラリーに、蛍光体としてペリレン系集光性蛍光染料である「Ｌｕｍｏｇｅｎ Ｙｅｌｌｏｗ Ｆ」（ＢＡＳＦ製）を４０％含有させ、ＬＥＤに塗布してバインダー層を形成した。   Next, a slurry composed of 80 wt% nitrocellulose and 20 wt% alumina contains 40% of “Lumogen Yellow F” (BASF), which is a perylene-based condensing fluorescent dye, as a phosphor, and is applied to an LED to form a binder layer. Formed.

次いで、蛍光体入り樹脂カバーの代わりに、シリコーン系樹脂（ダウコーニングシリコーン株式会社製ＳＲ７０１０）にＹＡＧ蛍光体１５％を配合して、上記のバインダー層上にチップ表面が平坦になるまで（図２の７及び５の部分まで）塗布した。   Next, instead of the phosphor-containing resin cover, 15% of YAG phosphor is blended with silicone resin (SR7010 manufactured by Dow Corning Silicone Co., Ltd.) until the chip surface becomes flat on the binder layer (FIG. 2). (Up to 7 and 5).

この発光ダイオードを通電して、色調を観察したところ、均一でむらのない色調が得られていることを確認した。   When this light emitting diode was energized and the color tone was observed, it was confirmed that a uniform and uniform color tone was obtained.

［実施例４］
実施例１と同様に、フリップチップ型ＬＥＤランプ及びシリコーン樹脂からなる蛍光体入り樹脂カバー７を用意した。 [Example 4]
Similarly to Example 1, a phosphor-containing resin cover 7 made of a flip-chip type LED lamp and a silicone resin was prepared.

次に、ＹＡＧ蛍光体、シラノール（Ｓｉ（ＯＥｔ）3ＯＨ）及びエタノールを１：１：１の割合で混合し、スラリーを調整した。このスラリーをノズルからＬＥＤチップの表面に撒布した後、３００℃にて３時間加熱して、蛍光体が分散したシリカからなるバインダー層８が形成された。このバインダー層に蛍光体入りキャップ７を接着剤により被着した。 Next, a YAG phosphor, silanol (Si (OEt) 3 OH) and ethanol were mixed at a ratio of 1: 1: 1 to prepare a slurry. This slurry was distributed from the nozzle to the surface of the LED chip, and then heated at 300 ° C. for 3 hours to form a binder layer 8 made of silica in which the phosphor was dispersed. A phosphor-containing cap 7 was adhered to the binder layer with an adhesive.

この発光ダイオードを通電して、色調を観察したところ、均一でむらのない色調が得られていることを確認した。   When this light emitting diode was energized and the color tone was observed, it was confirmed that a uniform and uniform color tone was obtained.

［実施例５］
実施例２と同様に、ＬＥＤランプ及びシリコーンゴムからなる樹脂カバー７を用意した。 [Example 5]
In the same manner as in Example 2, a resin cover 7 made of an LED lamp and silicone rubber was prepared.

次に、ＹＡＧ蛍光体とゾル状メチルシリケートとエチレングリコールのシリカを１：１の割合で混合し、スラリーを調整した。このスラリーをノズルからＬＥＤチップの表面に撒布した後、２６０℃にて３時間加熱して、蛍光体が分散したシリカからなるバインダー層８が形成された。このバインダー層に樹脂カバー７を接着剤により被着した。   Next, a YAG phosphor, sol-form methyl silicate, and silica of ethylene glycol were mixed at a ratio of 1: 1 to prepare a slurry. This slurry was distributed from the nozzle to the surface of the LED chip, and then heated at 260 ° C. for 3 hours to form a binder layer 8 made of silica in which the phosphor was dispersed. The resin cover 7 was adhered to the binder layer with an adhesive.

この発光ダイオードを通電して、色調を観察したところ、均一でむらのない色調が得られていることを確認した。   When this light emitting diode was energized and the color tone was observed, it was confirmed that a uniform and uniform color tone was obtained.

［実施例６］
図３に示されるように、ヒートシンクに形成されたカップ部内にＬＥＤチップが設置され、他方のリードと金線による配線が行われているチップ型ＬＥＤランプを用意した。前記ＬＥＤチップは透光性のエポキシ樹脂封止材５によって封止した。 [Example 6]
As shown in FIG. 3, a chip-type LED lamp was prepared in which an LED chip was installed in a cup portion formed on a heat sink, and wiring with the other lead and a gold wire was performed. The LED chip was sealed with a translucent epoxy resin sealing material 5.

シリコーン材料（信越化学工業社製ＫＥ−９６１Ｔ−Ｕ）に加硫剤０．５％及び蛍光体としてＹＡＧ蛍光体（イットリウム２８．０ｗｔ％、アルミニウム１３．６ｗｔ％、ガドリニウム５６．６２ｗｔ％、セリウム１．２３ｗｔ％）を４０％添加し、金型に適量し、１７０℃で１０分間保持、プレスすることにより、シリコーンゴムからなる肉厚０．３ｍｍの樹脂カバーを成形した。   Silicone material (KE-961T-U manufactured by Shin-Etsu Chemical Co., Ltd.) 0.5% vulcanizing agent and YAG phosphor as phosphor (yttrium 28.0 wt%, aluminum 13.6 wt%, gadolinium 56.62 wt%, cerium 1 .23 wt%) was added in an amount of 40%, an appropriate amount was added to the mold, and a resin cover having a thickness of 0.3 mm made of silicone rubber was molded by holding and pressing at 170 ° C. for 10 minutes.

次に、シリコーン系接着剤に蛍光体として前記ＹＡＧ蛍光体を５０％添加して、蛍光体含有接着剤を作製し、これをＬＥＤチップに塗布した。上記で作成した蛍光体入り樹脂カバーをＬＥＤチップの上部からかぶせたところ、余分な接着剤がＬＥＤチップの下からはみ出し、樹脂カバーとＬＥＤチップの基板との隙間を封止した。接着剤を硬化させこれによって、極めて薄型の白色ＬＥＤランプを得ることができた。   Next, 50% of the YAG phosphor was added as a phosphor to the silicone-based adhesive to produce a phosphor-containing adhesive, which was applied to the LED chip. When the phosphor-containing resin cover prepared above was covered from the top of the LED chip, excess adhesive protruded from the bottom of the LED chip, and the gap between the resin cover and the substrate of the LED chip was sealed. By curing the adhesive, an extremely thin white LED lamp could be obtained.

前記樹脂カバー７を含めて、発光体収容部材の内側全体を透光性のエポキシ樹脂封止材５によって封止し、前記封止材の頂部がレンズ形状となる発光ダイオードを得た。   The entire inside of the light emitter housing member including the resin cover 7 was sealed with a translucent epoxy resin sealing material 5 to obtain a light emitting diode in which the top of the sealing material had a lens shape.

この発光ダイオードを通電して、色調を観察したところ、均一でむらのない色調が得られていることを確認した。   When this light emitting diode was energized and the color tone was observed, it was confirmed that a uniform and uniform color tone was obtained.

本発明のチップ型ＬＥＤランプの概略図を示す。The schematic of the chip type LED lamp of this invention is shown. 本発明のフラップチップ型ＬＥＤランプの概略図を示す。The schematic of the flap chip type LED lamp of this invention is shown. 本発明の砲弾タイプのＬＥＤランプの概略図を示す。The schematic of the cannonball type LED lamp of this invention is shown. 従来の砲弾タイプのＬＥＤランプの概略図を示す。The schematic of the conventional bullet-type LED lamp is shown. 従来のチップタイプのＬＥＤランプの概略図を示す。The schematic of the conventional chip type LED lamp is shown. 従来の樹脂カバーを用いたＬＥＤランプの概略図を示す。The schematic of the LED lamp using the conventional resin cover is shown. 従来の樹脂カバー及び樹脂レンズを用いたＬＥＤランプの概略図を示す。The schematic of the LED lamp using the conventional resin cover and resin lens is shown. 従来のフリップチップタイプのＬＥＤランプの概略図を示す。The schematic of the conventional flip chip type LED lamp is shown.

符号の説明Explanation of symbols

１ リード
２ リード
３ ＬＥＤチップ
４ リード細線
５ 封止材
６ ＬＥＤ収容部材
７ 蛍光体入り樹脂カバー
８ バインダー層
９ 樹脂レンズ
１０ 金バンプ DESCRIPTION OF SYMBOLS 1 Lead 2 Lead 3 LED chip 4 Lead thin wire 5 Sealing material 6 LED accommodating member 7 Phosphor-containing resin cover 8 Binder layer 9 Resin lens 10 Gold bump

Claims (6)

ＬＥＤチップからの光を蛍光体又は波長吸収剤を含む樹脂カバーを通過させることで発光色を変換して成るＬＥＤランプにおいて、前記樹脂カバーと発光ダイオードまたは発光ダイオードを封止する封止体の間に蛍光体又は波長吸収剤を含有するバインダー層が形成されていることを特徴とするＬＥＤランプ。 In an LED lamp in which light emitted from an LED chip is converted by changing the emission color by passing a phosphor or a resin cover containing a wavelength absorber, between the resin cover and the sealing body for sealing the light emitting diode or the light emitting diode An LED lamp, wherein a binder layer containing a phosphor or a wavelength absorber is formed on the LED lamp. 前記バインダー層は、シリコーン系接着剤、エポキシ系接着剤及び無機微粒子から選ばれる結着剤並びに蛍光体又は波長吸収剤を含むことを特徴とする請求項１に記載のＬＥＤランプ。 2. The LED lamp according to claim 1, wherein the binder layer includes a binder selected from a silicone-based adhesive, an epoxy-based adhesive, and inorganic fine particles, and a phosphor or a wavelength absorber. 前記ＬＥＤはフリップチップ型発光ダイオードであることを特徴とする請求項１又は２に記載のＬＥＤランプ。 The LED lamp according to claim 1, wherein the LED is a flip-chip type light emitting diode. 前記樹脂カバーは、透明樹脂に蛍光体又は波長吸収剤を添加してキャップ状に形成されたものであることを特徴とする請求項１ないし３のいずれかに記載のＬＥＤランプ。 4. The LED lamp according to claim 1, wherein the resin cover is formed into a cap shape by adding a phosphor or a wavelength absorber to a transparent resin. 前記樹脂カバーの外側に樹脂により形成されたレンズ部を有する請求項１ないし４のいずれかに記載のＬＥＤランプ。 The LED lamp according to claim 1, further comprising a lens portion formed of a resin on an outer side of the resin cover. 前記レンズ部はフレネルレンズである請求項５に記載のＬＥＤランプ。 The LED lamp according to claim 5, wherein the lens unit is a Fresnel lens.
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