JP2006013457A5 - - Google Patents
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- JP2006013457A5 JP2006013457A5 JP2005142323A JP2005142323A JP2006013457A5 JP 2006013457 A5 JP2006013457 A5 JP 2006013457A5 JP 2005142323 A JP2005142323 A JP 2005142323A JP 2005142323 A JP2005142323 A JP 2005142323A JP 2006013457 A5 JP2006013457 A5 JP 2006013457A5
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- insulating layer
- light emitting
- emitting device
- gate
- layer formed
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Claims (10)
前記基板上に形成された第１の絶縁層と、
前記第１の絶縁層上に形成された第２の絶縁層と、
前記第２の絶縁層上に形成された半導体層と、
前記第２の絶縁層及び前記半導体層を覆って形成されたゲート絶縁層と、
前記ゲート絶縁層上に形成されたゲート電極と、
前記ゲート絶縁層及びゲート電極を覆って形成された第１の層間絶縁層と、
前記第１の層間絶縁層、前記ゲート絶縁層及び前記第２の絶縁層に形成された開口部と、
前記第１の絶縁層及び前記開口部を覆って形成された第２の層間絶縁層と、
前記開口部上に形成された発光素子を有し、
前記開口部は前記発光素子からの発光が発光装置外に射出する際の光路に対応して形成されることを特徴とする発光装置。 A substrate,
A first insulating layer formed on the substrate;
A second insulating layer formed on the first insulating layer;
A semiconductor layer formed on the second insulating layer;
A gate insulating layer formed to cover the second insulating layer and the semiconductor layer;
A gate electrode formed on the gate insulating layer;
A first interlayer insulating layer formed to cover the gate insulating layer and the gate electrode;
Openings formed in the first interlayer insulating layer, the gate insulating layer, and the second insulating layer;
A second interlayer insulating layer formed to cover the first insulating layer and the opening;
Having a light emitting element formed on the opening;
The light emitting device, wherein the opening is formed corresponding to an optical path when light emitted from the light emitting element is emitted to the outside of the light emitting device.
前記基板上に形成された第１の絶縁層と、
前記第１の絶縁層上に形成された第２の絶縁層と、
前記第２の絶縁層上に形成された半導体層と、
前記第２の絶縁層及び前記半導体層を覆って形成されたゲート絶縁層と、
前記ゲート絶縁層上に形成されたゲート電極と、
前記ゲート絶縁層及びゲート電極を覆って形成された第３の絶縁層と、
前記第３の絶縁層を覆って形成された第１の層間絶縁層と、
前記第１の層間絶縁層、前記第３の絶縁層、前記ゲート絶縁層及び前記第２の絶縁層を貫通して形成された開口部と、
前記第１の絶縁層及び前記開口部を覆って形成された第２の層間絶縁層と、
前記開口部上に形成された発光素子を有し、
前記開口部は前記発光素子からの発光が発光装置外に射出する際の光路に対応して形成されることを特徴とする発光装置。 A substrate,
A first insulating layer formed on the substrate;
A second insulating layer formed on the first insulating layer;
A semiconductor layer formed on the second insulating layer;
A gate insulating layer formed to cover the second insulating layer and the semiconductor layer;
A gate electrode formed on the gate insulating layer;
A third insulating layer formed to cover the gate insulating layer and the gate electrode;
A first interlayer insulating layer formed over the third insulating layer;
An opening formed through the first interlayer insulating layer, the third insulating layer, the gate insulating layer, and the second insulating layer;
A second interlayer insulating layer formed to cover the first insulating layer and the opening;
Having a light emitting element formed on the opening;
The light emitting device, wherein the opening is formed corresponding to an optical path when light emitted from the light emitting element is emitted to the outside of the light emitting device.
前記第１の領域は、The first region is
前記基板上に形成された第１の絶縁層と、A first insulating layer formed on the substrate;
前記第１の絶縁層上に形成された第２の絶縁層と、A second insulating layer formed on the first insulating layer;
前記第２の絶縁層上に形成された半導体層と、A semiconductor layer formed on the second insulating layer;
前記第２の絶縁層及び前記半導体層を覆って形成されたゲート絶縁層と、A gate insulating layer formed to cover the second insulating layer and the semiconductor layer;
前記ゲート絶縁層上に形成されたゲート電極と、A gate electrode formed on the gate insulating layer;
前記ゲート絶縁層及びゲート電極を覆って形成された第１の層間絶縁層と、A first interlayer insulating layer formed to cover the gate insulating layer and the gate electrode;
前記第１の層間絶縁層上に形成された第２の層間絶縁層と、A second interlayer insulating layer formed on the first interlayer insulating layer;
を有し、Have
前記第２の領域は、The second region is
前記基板上に形成された前記第１の絶縁層と、The first insulating layer formed on the substrate;
前記第１の絶縁層上に形成された前記第２の層間絶縁層と、The second interlayer insulating layer formed on the first insulating layer;
前記第２の層間絶縁層上に形成された発光素子と、A light emitting device formed on the second interlayer insulating layer;
を有し、Have
前記第２の領域は前記発光素子からの発光が発光装置外に射出する際の光路に対応して形成されることを特徴とする発光装置。The light emitting device, wherein the second region is formed corresponding to an optical path when light emitted from the light emitting element is emitted outside the light emitting device.
前記第１の領域は、The first region is
前記基板上に形成された第１の絶縁層と、A first insulating layer formed on the substrate;
前記第１の絶縁層上に形成された第２の絶縁層と、A second insulating layer formed on the first insulating layer;
前記第２の絶縁層上に形成された半導体層と、A semiconductor layer formed on the second insulating layer;
前記第２の絶縁層及び前記半導体層を覆って形成されたゲート絶縁層と、A gate insulating layer formed to cover the second insulating layer and the semiconductor layer;
前記ゲート絶縁層上に形成されたゲート電極と、A gate electrode formed on the gate insulating layer;
前記ゲート絶縁層及びゲート電極を覆って形成された第３の絶縁層と、A third insulating layer formed to cover the gate insulating layer and the gate electrode;
前記第３の絶縁層を覆って形成された第１の層間絶縁層と、A first interlayer insulating layer formed over the third insulating layer;
前記第１の層間絶縁層上に形成された第２の層間絶縁層と、A second interlayer insulating layer formed on the first interlayer insulating layer;
を有し、Have
前記第２の領域は、The second region is
前記基板上に形成された前記第１の絶縁層と、The first insulating layer formed on the substrate;
前記第１の絶縁層上に形成された前記第２の層間絶縁層と、The second interlayer insulating layer formed on the first insulating layer;
前記第２の層間絶縁層上に形成された発光素子と、A light emitting device formed on the second interlayer insulating layer;
を有し、Have
前記第２の領域は前記発光素子からの発光が発光装置外に射出する際の光路に対応して形成されることを特徴とする発光装置。The light emitting device, wherein the second region is formed corresponding to an optical path when light emitted from the light emitting element is emitted outside the light emitting device.
In any one of claims 1 to 9, wherein the first insulating layer is material composed mainly of silicon nitride, the second insulating layer is formed of a material mainly composed of silicon oxide A light emitting device characterized by that.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005142323A JP4809627B2 (en) | 2004-05-21 | 2005-05-16 | Light emitting device and manufacturing method thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004152522 | 2004-05-21 | ||
| JP2004152522 | 2004-05-21 | ||
| JP2005142323A JP4809627B2 (en) | 2004-05-21 | 2005-05-16 | Light emitting device and manufacturing method thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006013457A JP2006013457A (en) | 2006-01-12 |
| JP2006013457A5 true JP2006013457A5 (en) | 2008-06-26 |
| JP4809627B2 JP4809627B2 (en) | 2011-11-09 |
Family
ID=35780263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005142323A Expired - Fee Related JP4809627B2 (en) | 2004-05-21 | 2005-05-16 | Light emitting device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4809627B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101361861B1 (en) * | 2006-11-08 | 2014-02-12 | 엘지디스플레이 주식회사 | Organic light emitting diodes and method of manufacturing the same |
| JP5153366B2 (en) * | 2008-01-31 | 2013-02-27 | 株式会社豊田中央研究所 | Light-emitting element evaluation method and evaluation apparatus |
| KR101782557B1 (en) | 2010-10-25 | 2017-09-28 | 삼성디스플레이 주식회사 | Organic light emitting display device and manufacturing method of the same |
| KR102566630B1 (en) * | 2015-12-30 | 2023-08-16 | 엘지디스플레이 주식회사 | Organic Light Emitting Display Device |
| CN109103224A (en) * | 2018-08-20 | 2018-12-28 | 云谷（固安）科技有限公司 | TFT substrate and display panel |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3744766B2 (en) * | 1999-12-27 | 2006-02-15 | 三洋電機株式会社 | ORGANIC LIGHT-EMITTING ELEMENT, ITS MANUFACTURING METHOD, DISPLAY DEVICE AND ITS MANUFACTURING METHOD |
| JP2001242803A (en) * | 2000-02-29 | 2001-09-07 | Sony Corp | Display device and method of manufacturing the same |
| JP2001305583A (en) * | 2000-04-24 | 2001-10-31 | Sharp Corp | Liquid crystal display device |
| JP4223218B2 (en) * | 2001-02-19 | 2009-02-12 | 株式会社半導体エネルギー研究所 | Light emitting device |
| JP4454262B2 (en) * | 2002-07-25 | 2010-04-21 | 三洋電機株式会社 | Electroluminescence display device |
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2005
- 2005-05-16 JP JP2005142323A patent/JP4809627B2/en not_active Expired - Fee Related
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