JP2006009131A5 - - Google Patents
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- JP2006009131A5 JP2006009131A5 JP2004192061A JP2004192061A JP2006009131A5 JP 2006009131 A5 JP2006009131 A5 JP 2006009131A5 JP 2004192061 A JP2004192061 A JP 2004192061A JP 2004192061 A JP2004192061 A JP 2004192061A JP 2006009131 A5 JP2006009131 A5 JP 2006009131A5
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前記触媒を付与した基板表面の洗浄を、純水でリンスすることが好ましい。
請求項３に記載の発明は、前記触媒を付与した基板表面の洗浄を、キレート剤を含む薬液で洗浄し、その後純水でリンスすることによって行うことを特徴とする請求項１または２記載の基板処理方法である。
Scrubbing prior Symbol catalyst imparted to the substrate surface, it is preferable to rinse with pure water.
The invention according to claim 3 is characterized in that the cleaning of the substrate surface provided with the catalyst is performed by washing with a chemical solution containing a chelating agent and then rinsing with pure water. A substrate processing method.
請求項４に記載の発明は、前記保管容器は、内部の湿度、温度、酸素濃度及び空中に浮遊する汚染物質の少なくとも一つを制御可能であり、開閉自在な密閉容器からなることを特徴とする請求項２または３記載の基板処理方法である。
これにより、保管容器の内部を外部から遮断して、例えば銅からなる配線の表面や内部状態が変化することを有効に防止できるように制御して、めっき処理前の基板の状態を安定化または改良することができる。
The invention according to claim 4 is characterized in that the storage container is configured to be capable of controlling at least one of internal humidity, temperature, oxygen concentration and pollutant floating in the air, and is composed of an openable / closable sealed container. The substrate processing method according to claim 2 or 3 .
As a result, the inside of the storage container is blocked from the outside, and control is performed so as to effectively prevent changes in the surface and internal state of the wiring made of copper, for example, to stabilize the state of the substrate before the plating process or It can be improved.
請求項５に記載の発明は、前記触媒処理液として、触媒金属イオンを含む溶液に前記洗浄液を混合したものを使用することを特徴とする請求項１乃至４のいずれかに記載の基板処理方法である。
このように、触媒処理液として、触媒金属イオンを含む溶液に洗浄液を混合したものを使用することで、ＣＭＰ後の基板の洗浄液（薬液）による洗浄と、配線の表面への触媒処理液による触媒付与とをクロスコンタミネーションの程度を軽減しつつ、同じユニットで連続して行うことができる。
The invention according to claim 5 uses the substrate treatment method according to any one of claims 1 to 4 , wherein the catalyst treatment solution is a solution containing catalyst metal ions mixed with the cleaning solution. It is.
As described above, by using a catalyst treatment liquid in which a cleaning liquid is mixed with a solution containing catalytic metal ions, cleaning of the substrate after CMP with a cleaning liquid (chemical solution) and a catalyst with a catalyst processing liquid on the surface of the wiring are performed. Giving can be performed continuously in the same unit while reducing the degree of cross-contamination.
請求項６に記載の発明は、基板の表面に形成した埋込み配線の表面に保護膜を選択的に形成するに際し、配線の表面に予め触媒を付与した基板を無電解めっき装置の装置フレーム内に搬入し、前記装置フレーム内に搬入した基板の配線の表面に無電解めっきにより保護膜を直接形成することを特徴とする基板処理方法である。
このように、無電解めっき装置の内部で、触媒付与処理を行うことなく、基板の配線の表面に無電解めっきにより保護膜を直接形成することで、めっき処理のスループットを向上させ、しかも無電解めっき装置の内部に前処理ユニットを設置する必要をなくして、装置としてのフットプリントを小さくすることができる。
In the invention according to claim 6 , when the protective film is selectively formed on the surface of the embedded wiring formed on the surface of the substrate, the substrate in which the catalyst is previously applied to the surface of the wiring is placed in the apparatus frame of the electroless plating apparatus. The substrate processing method is characterized in that a protective film is directly formed by electroless plating on the surface of the wiring of the substrate carried in and carried into the apparatus frame.
In this way, by forming a protective film directly on the surface of the wiring of the substrate by electroless plating without carrying out the catalyst application inside the electroless plating apparatus, the throughput of the plating process is improved and the electroless It is not necessary to install a pretreatment unit inside the plating apparatus, and the footprint as the apparatus can be reduced.
請求項７に記載の発明は、前記無電解めっき装置の装置フレーム内に搬入する基板を、搬入直前に内部の雰囲気を制御した保管容器内に保管することを特徴とする請求項６記載の基板処理方法である。
請求項８に記載の発明は、保護膜を形成した基板を更に後処理して乾燥させることを特徴とする請求項６または７記載の基板処理方法である。
請求項９に記載の発明は、前記基板の後処理は、基板の非金属表面に残留する不純物を選択的に除去する薬液洗浄処理またはエッチング処理であることを特徴とする請求項８記載の基板処理方法である。
これにより、層間絶縁膜上の金属微粒子などのめっき残留物を確実に除去して、無電解めっきの選択性を一層向上させることができる。
The invention described in claim 7, the substrate according to claim 6, wherein the storing the substrates to be loaded into the device frame of an electroless plating apparatus, within a storage container having a controlled internal atmosphere carrying just before It is a processing method.
The invention according to claim 8 is the substrate processing method according to claim 6 or 7, wherein the substrate on which the protective film is formed is further post-processed and dried.
Invention according to claim 9, post-treatment of the substrate, the substrate according to claim 8, characterized in that a chemical cleaning process or etching process to selectively remove impurities remaining on the metallic surface of the substrate It is a processing method.
Thereby, plating residues such as metal fine particles on the interlayer insulating film can be reliably removed, and the selectivity of electroless plating can be further improved.
請求項１０に記載の発明は、前記基板の後処理は、基板の非金属表面に残留する不純物を選択的に除去または改質するプラズマ処理であることを特徴とする請求項８記載の基板処理方法である。 The invention according to claim 10, post-processing of the substrate, the substrate processing according to claim 8, characterized in that the plasma treatment to selectively remove or modify the impurity remaining on the metallic surface of the substrate Is the method.
前記乾燥後に、保護膜の膜厚及び膜質の少なくとも一方を測定し、この測定値と目標値とを比較して前記無電解めっき装置における無電解めっきの処理条件を調整することが好ましい。
これにより、例えば配線の表面に形成した保護膜の膜厚を測定し、この測定値と目標値との差に応じて、例えば次の基板に対するめっき処理の処理時間を調整することで、配線の表面に形成される保護膜の膜厚を制御することができる。
After pre-Symbol drying, at least one of film thickness and film quality of the protective film was measured, it is preferable to adjust the processing conditions of the electroless plating in the electroless plating apparatus by comparing the measured value and the target value.
Thereby, for example, the thickness of the protective film formed on the surface of the wiring is measured, and by adjusting the processing time of the plating process for the next substrate, for example, according to the difference between the measured value and the target value, The thickness of the protective film formed on the surface can be controlled.
請求項１１に記載の発明は、表面に配線用凹部を形成し配線材料を該配線用凹部内へ埋め込みつつ成膜した基板を用意し、該凹部内以外の余剰な配線材料を化学的機械研磨により除去して該凹部内の配線材料を配線と成し、前記研磨直後に基板の表面を洗浄液に接触させて研磨残渣と配線表面の酸化膜を除去し、前記洗浄液に接触させた基板表面を触媒処理液に接触させて前記配線の表面に触媒を付与し、前記触媒を付与した基板表面を洗浄した後、基板の前記配線の表面に無電解めっきにより保護膜を直接形成することを特徴とする基板処理方法である。 According to an eleventh aspect of the present invention, there is provided a substrate on which a concave portion for wiring is formed on a surface and a wiring film is embedded in the concave portion for wiring, and a surplus wiring material other than the concave portion is chemically mechanically polished. The wiring material in the recess is formed as wiring by removing the polishing substrate and the surface of the substrate in contact with the cleaning liquid immediately after the polishing to remove the polishing residue and the oxide film on the wiring surface, and the substrate surface in contact with the cleaning liquid is removed. A catalyst is applied to the surface of the wiring in contact with a catalyst treatment solution, and after cleaning the substrate surface to which the catalyst is applied, a protective film is directly formed on the surface of the wiring on the substrate by electroless plating. This is a substrate processing method.
前記触媒を付与した基板表面の洗浄を、純水でリンスすることが好ましい。
請求項１２に記載の発明は、前記触媒を付与した基板表面の洗浄を、キレート剤を含む薬液で洗浄し、その後純水でリンスすることを特徴とする請求項１１記載の基板処理方法である。
Scrubbing prior Symbol catalyst imparted to the substrate surface, it is preferable to rinse with pure water.
The invention according to claim 12 is the substrate processing method according to claim 11 , wherein the cleaning of the substrate surface provided with the catalyst is cleaned with a chemical solution containing a chelating agent and then rinsed with pure water. .
請求項１３に記載の発明は、前記触媒を付与し表面を洗浄した基板を、洗浄直後に乾燥させることを特徴とする請求項１１または１２記載の基板処理方法である。
請求項１４に記載の発明は、前記乾燥した基板を、配線の表面に無電解めっきにより保護膜を直接形成する直前まで内部の雰囲気を制御した保管容器内に保管することを特徴とする請求項１３記載の基板処理方法である。
A thirteenth aspect of the present invention is the substrate processing method according to the eleventh or twelfth aspect, wherein the substrate having the catalyst applied and the surface cleaned is dried immediately after the cleaning.
The invention described in claim 14 is characterized in that the dried substrate is stored in a storage container in which the internal atmosphere is controlled until immediately before the protective film is directly formed on the surface of the wiring by electroless plating. 13. The substrate processing method according to 13 .
請求項１５に記載の発明は、表面に配線用凹部を形成し配線材料を該配線用凹部内へ埋め込みつつ成膜した基板の該凹部内以外の余剰な配線材料を除去して配線を形成する化学的機械研磨ユニットと、基板の表面を洗浄液に接触させて研磨残渣と配線表面の酸化膜を除去する第１洗浄ユニットと、前記基板表面を触媒処理液に接触させて配線の表面に触媒を付与する触媒付与ユニットと、前記触媒を付与した基板表面を洗浄して触媒金属残渣を除去する第２洗浄ユニットと、前記触媒を付与し洗浄した基板表面を乾燥させるユニットを有することを特徴とする基板処理装置である。 The invention according to claim 15 forms a wiring by forming a wiring recess on the surface and removing the wiring material other than the recess of the substrate formed while embedding the wiring material in the wiring recess. A chemical mechanical polishing unit; a first cleaning unit for contacting the surface of the substrate with a cleaning solution to remove polishing residues and an oxide film on the surface of the wiring; A catalyst applying unit for applying, a second cleaning unit for cleaning the substrate surface to which the catalyst has been applied to remove catalyst metal residues, and a unit for drying the substrate surface to which the catalyst has been applied and cleaned. A substrate processing apparatus.
請求項１６に記載の発明は、前記触媒処理液として、触媒金属イオンを含む溶液に前記洗浄液を混合したものを使用することを特徴とする請求項１５記載の基板処理装置である。
前記第１洗浄ユニットと前記触媒付与ユニットを一つのユニットに統合してもよい。
前記第１洗浄ユニット、前記触媒付与ユニット及び前記第２洗浄ユニットを一つのユニットに統合してもよい。
A sixteenth aspect of the present invention is the substrate processing apparatus according to the fifteenth aspect of the present invention, wherein the catalyst processing liquid is a solution in which the cleaning liquid is mixed with a solution containing catalytic metal ions.
It may be integrated with the previous SL first cleaning unit of the catalyst application unit into one unit.
Before Symbol first cleaning unit, wherein the catalyst application unit and the second cleaning unit may be integrated into one unit a.
請求項１７に記載の発明は、異なる装置内で予め触媒を付与した配線の表面に無電解めっきにより保護膜を選択的に形成する無電解めっきユニットを有することを特徴とする基板処理装置である。
めっき後の基板の後処理を行う後処理ユニットを更に有していてもよい。
前記保護膜の膜厚及び膜質の少なくとも一方を測定する測定ユニットを更に有していてもよい。
The invention described in claim 17 is a substrate processing apparatus comprising an electroless plating unit that selectively forms a protective film on a surface of a wiring previously provided with a catalyst in a different apparatus by electroless plating. .
The post-processing unit that performs post-processing of the substrate after the order Kki may further closed.
It may further have a measuring unit for measuring at least one of film thickness and film quality of the previous SL protective film.
請求項１８に記載の発明は、表面に配線用凹部を形成し配線材料を該配線用凹部内へ埋め込みつつ成膜した基板の該凹部内以外の余剰な配線材料を除去して配線を形成する化学的機械研磨ユニットと、基板の表面を洗浄液に接触させて研磨残渣と配線表面の酸化膜を除去する第１洗浄ユニットと、前記基板表面を触媒処理液に接触させて配線の表面に触媒を付与する触媒付与ユニットと、前記触媒を付与した基板表面を洗浄して触媒金属残渣を除去する第２洗浄ユニットと、前記触媒を付与し洗浄した基板表面を乾燥させるユニットとを備えた化学的機械研磨装置と、前記触媒を付与した基板を、内部の雰囲気を制御して内部に保管し搬送する保管容器と、前記保管容器内に保管し搬送した基板の配線の表面に無電解めっきにより保護膜を選択的に形成する無電解めっきユニットを備えた無電解めっき装置を有することを特徴とする基板処理装置である。
このように、化学的機械研磨装置と無電解めっき装置との間で基板を乾燥する際、内部の雰囲気を制御した保管容器を使用することにより、めっき処理前の基板の状態の安定化または改良することができる。
The invention according to claim 18 forms a wiring by forming a recess for wiring on the surface and removing the excess wiring material other than the recess in the substrate formed while embedding the wiring material in the wiring recess. A chemical mechanical polishing unit; a first cleaning unit for contacting the surface of the substrate with a cleaning solution to remove polishing residues and an oxide film on the surface of the wiring; A chemical machine comprising: a catalyst applying unit for applying; a second cleaning unit for cleaning the substrate surface to which the catalyst has been applied to remove catalyst metal residues; and a unit for applying the catalyst and drying the cleaned substrate surface. A polishing apparatus, a storage container for storing and transporting the substrate provided with the catalyst in an internal atmosphere under control of the internal atmosphere, and a protective film by electroless plating on the surface of the wiring of the substrate stored and transported in the storage container Select A substrate processing apparatus, characterized in that it comprises an electroless plating apparatus provided with the electroless plating unit which formed.
As described above, when the substrate is dried between the chemical mechanical polishing apparatus and the electroless plating apparatus, the state of the substrate before the plating process is stabilized or improved by using the storage container in which the internal atmosphere is controlled. can do.
請求項１９に記載の発明は、表面に配線用凹部を形成し配線材料を該配線用凹部内へ埋め込みつつ成膜した基板の該凹部内以外の余剰な配線材料を除去して配線を形成する化学的機械研磨ユニットと、基板の表面を洗浄液に接触させて研磨残渣と配線表面の酸化膜を除去する第１洗浄ユニットと、前記基板表面を触媒処理液に接触させて配線の表面に触媒を付与する触媒付与ユニットと、前記触媒を付与した基板表面を洗浄して触媒金属残渣を除去する第２洗浄ユニットと、基板の配線の表面に無電解めっきにより保護膜を選択的に形成する無電解めっきユニットと、基板を乾燥させるユニットを有することを特徴とする基板処理装置である。
According to the nineteenth aspect of the present invention, a wiring recess is formed on the surface of the substrate formed while forming a wiring recess and embedding the wiring material in the wiring recess to remove excess wiring material other than the recess. A chemical mechanical polishing unit; a first cleaning unit for contacting the surface of the substrate with a cleaning solution to remove polishing residues and an oxide film on the surface of the wiring; A catalyst applying unit to be applied, a second cleaning unit for cleaning the surface of the substrate to which the catalyst has been applied to remove catalyst metal residues, and electroless to selectively form a protective film on the surface of the wiring of the substrate by electroless plating A substrate processing apparatus having a plating unit and a unit for drying a substrate.
Claims (19)
該凹部内以外の余剰な配線材料を化学的機械研磨により除去して該凹部内の配線材料を配線と成し、
前記研磨直後に基板の表面を洗浄液に接触させて研磨残渣と配線表面の酸化膜を除去し、
前記洗浄液に接触させた基板表面を触媒処理液に接触させて前記配線の表面に触媒を付与し、
前記触媒を付与した基板表面を洗浄した後、乾燥させることを特徴とする基板処理方法。 Prepare a substrate formed with a wiring recess formed on the surface and a wiring material embedded in the wiring recess,
Excess wiring material other than in the recesses is removed by chemical mechanical polishing to form the wiring material in the recesses as wiring,
Immediately after the polishing, the surface of the substrate is brought into contact with the cleaning liquid to remove the polishing residue and the oxide film on the wiring surface,
The substrate surface brought into contact with the cleaning liquid is brought into contact with a catalyst treatment liquid to give a catalyst to the surface of the wiring,
A substrate processing method, wherein the substrate surface provided with the catalyst is washed and then dried.
配線の表面に予め触媒を付与した基板を無電解めっき装置の装置フレーム内に搬入し、前記装置フレーム内に搬入した基板の配線の表面に無電解めっきにより保護膜を直接形成することを特徴とする基板処理方法。 When selectively forming a protective film on the surface of the embedded wiring formed on the surface of the substrate,
A substrate in which a catalyst is previously applied to the surface of the wiring is carried into an apparatus frame of an electroless plating apparatus, and a protective film is directly formed on the surface of the wiring of the board carried into the apparatus frame by electroless plating. Substrate processing method.
該凹部内以外の余剰な配線材料を化学的機械研磨により除去して該凹部内の配線材料を配線と成し、
前記研磨直後に基板の表面を洗浄液に接触させて研磨残渣と配線表面の酸化膜を除去し、
前記洗浄液に接触させた基板表面を触媒処理液に接触させて前記配線の表面に触媒を付与し、
前記触媒を付与した基板表面を洗浄した後、基板の前記配線の表面に無電解めっきにより保護膜を直接形成することを特徴とする基板処理方法。 Prepare a substrate formed with a wiring recess formed on the surface and a wiring material embedded in the wiring recess,
Excess wiring material other than in the recesses is removed by chemical mechanical polishing to form the wiring material in the recesses as wiring,
Immediately after the polishing, the surface of the substrate is brought into contact with the cleaning liquid to remove the polishing residue and the oxide film on the wiring surface,
The substrate surface brought into contact with the cleaning liquid is brought into contact with a catalyst treatment liquid to give a catalyst to the surface of the wiring,
A substrate processing method characterized by forming a protective film directly on the surface of the wiring of the substrate by electroless plating after cleaning the substrate surface provided with the catalyst.
基板の表面を洗浄液に接触させて研磨残渣と配線表面の酸化膜を除去する第１洗浄ユニットと、
前記基板表面を触媒処理液に接触させて配線の表面に触媒を付与する触媒付与ユニットと、
前記触媒を付与した基板表面を洗浄して触媒金属残渣を除去する第２洗浄ユニットと、
前記触媒を付与し洗浄した基板表面を乾燥させるユニットを有することを特徴とする基板処理装置。 A chemical mechanical polishing unit for forming a wiring by forming a wiring recess on the surface and removing wiring material other than the recess of the substrate formed while embedding the wiring material in the wiring recess;
A first cleaning unit for contacting the surface of the substrate with a cleaning liquid to remove polishing residues and oxide films on the wiring surface;
A catalyst imparting unit for bringing the substrate surface into contact with a catalyst treatment liquid and imparting a catalyst to the surface of the wiring;
A second cleaning unit for cleaning the substrate surface provided with the catalyst to remove catalyst metal residues;
A substrate processing apparatus, comprising: a unit that dries the surface of the substrate that has been provided with the catalyst and has been cleaned.
前記触媒を付与した基板を、内部の雰囲気を制御して内部に保管し搬送する保管容器と、
前記保管容器内に保管し搬送した基板の配線の表面に無電解めっきにより保護膜を選択的に形成する無電解めっきユニットを備えた無電解めっき装置を有することを特徴とする基板処理装置。 A chemical mechanical polishing unit for forming a wiring by forming a wiring recess on the surface and removing wiring material other than the recess of the substrate formed while embedding the wiring material in the wiring recess; A first cleaning unit for removing the polishing residue and the oxide film on the wiring surface by bringing the surface into contact with a cleaning liquid; a catalyst applying unit for bringing the substrate surface into contact with a catalyst treatment liquid and applying a catalyst to the surface of the wiring; and the catalyst A chemical mechanical polishing apparatus comprising: a second cleaning unit for cleaning the substrate surface to which the catalyst is applied to remove catalyst metal residues; and a unit for drying the substrate surface to which the catalyst has been applied and cleaned.
A storage container for storing and transporting the substrate to which the catalyst is applied, controlling the atmosphere inside,
A substrate processing apparatus comprising: an electroless plating apparatus including an electroless plating unit that selectively forms a protective film on the surface of a wiring of a substrate stored and transported in the storage container by electroless plating.
基板の表面を洗浄液に接触させて研磨残渣と配線表面の酸化膜を除去する第１洗浄ユニットと、
前記基板表面を触媒処理液に接触させて配線の表面に触媒を付与する触媒付与ユニットと、
前記触媒を付与した基板表面を洗浄して触媒金属残渣を除去する第２洗浄ユニットと、
基板の配線の表面に無電解めっきにより保護膜を選択的に形成する無電解めっきユニットと、
基板を乾燥させるユニットを有することを特徴とする基板処理装置。 A chemical mechanical polishing unit for forming a wiring by forming a wiring recess on the surface and removing wiring material other than the recess of the substrate formed while embedding the wiring material in the wiring recess;
A first cleaning unit for contacting the surface of the substrate with a cleaning liquid to remove polishing residues and oxide films on the wiring surface;
A catalyst imparting unit for bringing the substrate surface into contact with a catalyst treatment liquid and imparting a catalyst to the surface of the wiring;
A second cleaning unit for cleaning the substrate surface provided with the catalyst to remove catalyst metal residues;
An electroless plating unit that selectively forms a protective film on the surface of the wiring of the substrate by electroless plating;
A substrate processing apparatus comprising a unit for drying a substrate.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004192061A JP2006009131A (en) | 2004-06-29 | 2004-06-29 | Method and apparatus for processing substrate |
| PCT/JP2005/001167 WO2005071138A1 (en) | 2004-01-23 | 2005-01-21 | Method for processing substrate, catalyst process liquid, and substrate processing apparatus |
| EP05704220A EP1717344A4 (en) | 2004-01-23 | 2005-01-21 | Method for processing substrate, catalyst process liquid, and substrate processing apparatus |
| US11/039,967 US7285492B2 (en) | 2004-01-23 | 2005-01-24 | Method for processing substrate |
| US11/896,071 US20080000776A1 (en) | 2004-01-23 | 2007-08-29 | Method and apparatus for processing substrate |
| US12/685,820 US20100105154A1 (en) | 2004-01-23 | 2010-01-12 | Method and apparatus for processing substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004192061A JP2006009131A (en) | 2004-06-29 | 2004-06-29 | Method and apparatus for processing substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006009131A JP2006009131A (en) | 2006-01-12 |
| JP2006009131A5 true JP2006009131A5 (en) | 2007-07-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004192061A Pending JP2006009131A (en) | 2004-01-23 | 2004-06-29 | Method and apparatus for processing substrate |
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| Country | Link |
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| JP (1) | JP2006009131A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080039412A (en) * | 2006-06-26 | 2008-05-07 | 도쿄엘렉트론가부시키가이샤 | Substrate processing method and substrate processing apparatus |
| JP2008038215A (en) * | 2006-08-08 | 2008-02-21 | Ebara Corp | Substrate-treating method and substrate-treating apparatus |
| JP5143498B2 (en) | 2006-10-06 | 2013-02-13 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing apparatus, program, and recording medium |
| JP7011388B2 (en) * | 2016-12-28 | 2022-01-26 | エスアイアイ・プリンテック株式会社 | Groove structure plating method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3821709B2 (en) * | 2001-12-25 | 2006-09-13 | 株式会社荏原製作所 | Pretreatment method of electroless plating |
| JP3812891B2 (en) * | 2002-01-30 | 2006-08-23 | 株式会社荏原製作所 | Wiring formation method |
-
2004
- 2004-06-29 JP JP2004192061A patent/JP2006009131A/en active Pending
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