JP2005536064A - High−k金属シリケートの原子層堆積 - Google Patents
High−k金属シリケートの原子層堆積 Download PDFInfo
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- JP2005536064A JP2005536064A JP2004529512A JP2004529512A JP2005536064A JP 2005536064 A JP2005536064 A JP 2005536064A JP 2004529512 A JP2004529512 A JP 2004529512A JP 2004529512 A JP2004529512 A JP 2004529512A JP 2005536064 A JP2005536064 A JP 2005536064A
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- precursor
- metal
- organosilicon
- silicon
- organometallic
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- 229910052914 metal silicate Inorganic materials 0.000 title claims abstract description 31
- 238000000231 atomic layer deposition Methods 0.000 title abstract description 36
- 239000002243 precursor Substances 0.000 claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 125000002524 organometallic group Chemical group 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 19
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 24
- 238000010926 purge Methods 0.000 claims description 20
- 239000003990 capacitor Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 239000011368 organic material Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 2
- 150000003950 cyclic amides Chemical class 0.000 claims 2
- 150000004703 alkoxides Chemical class 0.000 claims 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 33
- 201000011452 Adrenoleukodystrophy Diseases 0.000 description 26
- 208000010796 X-linked adrenoleukodystrophy Diseases 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- -1 alkyl metals Chemical class 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 11
- 238000011109 contamination Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000007800 oxidant agent Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical group O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 150000001343 alkyl silanes Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical group 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 150000004760 silicates Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000012686 silicon precursor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BGGIUGXMWNKMCP-UHFFFAOYSA-N 2-methylpropan-2-olate;zirconium(4+) Chemical compound CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C BGGIUGXMWNKMCP-UHFFFAOYSA-N 0.000 description 1
- QCRDVHGVAXWBFQ-UHFFFAOYSA-N C(C)[N-]C.C(C)[N-]C.C(C)[N-]C.C(C)[N-]C.[Si+4] Chemical group C(C)[N-]C.C(C)[N-]C.C(C)[N-]C.C(C)[N-]C.[Si+4] QCRDVHGVAXWBFQ-UHFFFAOYSA-N 0.000 description 1
- PGGUBXZUXKCJBF-UHFFFAOYSA-N C(C)[N-]CC.C(C)[N-]CC.C(C)[N-]CC.C(C)[N-]CC.[Si+4] Chemical compound C(C)[N-]CC.C(C)[N-]CC.C(C)[N-]CC.C(C)[N-]CC.[Si+4] PGGUBXZUXKCJBF-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- JJNJWXLJIKIHDC-UHFFFAOYSA-N [Si+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] Chemical compound [Si+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] JJNJWXLJIKIHDC-UHFFFAOYSA-N 0.000 description 1
- GNKTZDSRQHMHLZ-UHFFFAOYSA-N [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] Chemical compound [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] GNKTZDSRQHMHLZ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- ZLWHXGXVIRUNGU-UHFFFAOYSA-N dimethylazanide silicon(4+) Chemical compound C[N-]C.C[N-]C.C[N-]C.C[N-]C.[Si+4] ZLWHXGXVIRUNGU-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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Abstract
Description
本出願は、引用によりその全体が本明細書に組み込まれる、「Atomic Layer Deposition of Metal Silicates for High−k Gate and Capacitor Dielectrics」の名称で2002年8月18日に出願された米国特許仮出願番号第60/404,371号の関連出願であり、これに対する優先権を主張する。また本出願は、引用により本明細書に組み込まれる、「Atomic Layer Deposition of High−k Dielectric Films」の名称で2002年7月19日に出願された米国特許仮出願番号第60/396,723号の関連出願である。
有機金属前駆体は任意の金属供与有機材料とすることができる。好適な有機金属前駆体はアルキル金属、アルコキシド金属、及び金属アルキルアミドを含む。有機金属前駆体は金属アルキルアミドであるのが好ましい。更により好ましい有機金属前駆体はエチルメチルアミドリガンドを包含する金属アルキルアミドである。このような前駆体は、結果として得られる金属シリケート膜で少ない炭素汚染を示す。
本発明は、ゲート及び/又はキャパシタ誘電体用途において二酸化ケイ素に代わるhigh−k金属シリケートを形成するためのALDプロセスを提供する。本プロセスに従って形成される好適な金属シリケートはハフニウムシリケートである。ハフニウムシリケートは、卓越した熱安定性を示すので、他のシリケートと比較して界面での二酸化ケイ素の成長がより少なくなる。
M(NR1R2)n
式中、「M」は金属、「R1」及び「R2」は、置換された又は置換されない線形の分岐及び環状アルキルから構成される群から別個に選択され、「n」は金属の原子価に対応する数である。好ましくは「M」は、第4族(Ti、Zr、Hf)の金属である(第4族とは、旧IUPAC方式のIVA族及びCAS方式でのIVB族に相当する新しい周期律表の表記である)。理想的には金属はハフニウムである。好ましくは「R1」及び「R2」はそれぞれ、リガンドが結果として得られる膜の炭素汚染を低減するので、メチル及びエチルなどのC1−C6アルキルである。更に好ましくは、「R1」及び「R2」は、それぞれエチルとメチルグループである。エチルメチルアミドのリガンドを備えた金属アルキルアミドを使用すると、金属シリケート膜の炭素汚染がより少ない。例えば、Hf−TEMAは、Hf−TDMA及びハフニウムテトラメチルアミド(「Hf−TDEA」)などの関連する化合物よりも炭素汚染が少ない。
Si(NR1R2)4
式中、「R1」及び「R2」はそれぞれ、置換された又は置換されない線形の分岐及び環状アルキルから構成される群から別個に選択される。好ましくは「R1」及び「R2」は、メチル及びエチルなどのC1−C6アルキルである。更に好ましくは、シリコンアルキルアミドは、シリコンテトラキス(エチルメチルアミド)(「Si−TEMA」)である。これは、この化合物が、シリコンテトラキス(ジエチルアミド)(「Si−TDEA」)やシリコンテトラキス(ジメチルアミド)(「Si−TDMA」)などの同様の化合物と比較した場合でさえも、金属シリケート膜でより少ない炭素汚染をもたらす。
110 pドープされたシリコン基板
120 チャネル領域
130 nドープシリコン・ソース
140 nドープシリコン・ドレン
150 ゲート電極
160 ゲート誘電体
Claims (25)
- 原子層を堆積することによって基板上に金属シリケート膜を成長させる方法であって、
(i)有機金属前駆体と有機シリコン前駆体とを基板を収容する反応チャンバに導入し、
(ii)前記反応チャンバをパージし、
(iii)前記反応チャンバにオゾンを導入し、
(iv)前記反応チャンバをパージし、
(v)前記基板上で目標厚さの膜が達成されるまで前記段階(i)、(ii)、(iii)、及び(iv)を繰り返す、
ことを含む方法。 - 前記基板はシリコンである請求項1に記載の方法。
- 前記有機金属前駆体の金属は第4族の金属である請求項1に記載の方法。
- 前記有機金属前駆体の金属はハフニウムである請求項1に記載の方法。
- 前記有機金属前駆体は線形の分岐及び環状アルキルである請求項1に記載の方法。
- 前記有機金属前駆体は金属アルキルアミドである請求項1に記載の方法。
- 前記有機シリコン前駆体はシリコンアルキルアミドである請求項1に記載の方法。
- 前記有機金属前駆体は金属アルコキシドである請求項1に記載の方法。
- 前記有機金属前駆体及び前記有機シリコン前駆体は、混合され、揮発されて、混合ガスとして前記チャンバに導入されることを特徴とする請求項1に記載の方法。
- 前記有機金属前駆体及び前記有機シリコン前駆体は、個別に揮発されて、同時に前記チャンバに導入されることを特徴とする請求項1に記載の方法。
- 前記有機金属前駆体及び前記有機シリコン前駆体は、個別に揮発されて、連続してチャンバに導入されることを特徴とする請求項1に記載の方法。
- トランジスタのゲートを形成する方法であって、
(i)有機金属前駆体と有機シリコン前駆体とを基板を収容する反応チャンバ内に導入し、
(ii)前記反応チャンバをパージし、
(iii)前記反応チャンバにオゾンを導入し、
(iv)前記反応チャンバをパージし、
(v)前記基板上に目標厚さの誘電体膜が達成されるまで前記段階(i)、(ii)、(iii)、及び(iv)を繰り返し、
(vi)前記誘電体膜上に導電性膜を配置する、
ことを含む方法。 - 前記基板はシリコンである請求項12に記載の方法。
- 前記有機金属前駆体は第4族金属の線形の分岐及び環状アミドであり、前記有機シリコン前駆体はシリコン供与有機材料である請求項12に記載の方法。
- 前記有機金属前駆体は第4族金属の金属アルキルアミドであり、前記有機シリコン前駆体はシリコンアルキルアミドである請求項12に記載の方法。
- 前記有機金属前駆体及び前記有機シリコン前駆体は、混合され、揮発されて、混合ガスとして前記チャンバに導入されることを特徴とする請求項12に記載の方法。
- 前記有機金属前駆体及び前記有機シリコン前駆体は、個別に揮発されて、同時に前記チャンバに導入されることを特徴とする請求項12に記載の方法。
- 前記の有機金属前駆体及び前記有機シリコン前駆体は、個別に揮発されて、連続して前記チャンバに導入されることを特徴とする請求項12に記載の方法。
- キャパシタを形成する方法であって、
(i)有機金属前駆体と有機シリコン前駆体とを基板を収容する反応チャンバ内に導入し、
(ii)前記反応チャンバをパージし、
(iii)前記反応チャンバにオゾンを導入し、
(iv)前記反応チャンバをパージし、
(v)前記基板上に目標厚さの誘電体膜が達成されるまで前記段階(i)、(ii)、(iii)、及び(iv)を繰り返し、
(vi)2つの電極間に前記膜を位置付ける、
ことを含む方法。 - 前記基板は2つの電極の一方である請求項19に記載の方法。
- 前記有機金属前駆体は、第4族金属の線形の分岐及び環状アミドであり、前記有機シリコン前駆体はシリコン供与有機材料である請求項19に記載の方法。
- 前記有機金属前駆体は第4族金属の金属アルキルアミドであり、前記有機シリコン前駆体はシリコンアルキルアミドである請求項19に記載の方法。
- 前記の有機金属前駆体及び前記有機シリコン前駆体は、混合され、揮発されて、混合ガスとして前記チャンバに導入されることを特徴とする請求項19に記載の方法。
- 前記の有機金属前駆体及び前記有機シリコン前駆体は、個別に揮発されて、同時に前記チャンバに導入されることを特徴とする請求項19に記載の方法。
- 前記の有機金属前駆体及び前記有機シリコン前駆体は、個別に揮発されて、連続して前記チャンバに導入されることを特徴とする請求項19に記載の方法。
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US40437102P | 2002-08-18 | 2002-08-18 | |
PCT/US2003/025739 WO2004017378A2 (en) | 2002-08-18 | 2003-08-18 | Atomic layer deposition of high k metal silicates |
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US (1) | US20060228888A1 (ja) |
EP (1) | EP1535320A4 (ja) |
JP (1) | JP2005536064A (ja) |
KR (1) | KR20050059077A (ja) |
CN (1) | CN1902738A (ja) |
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- 2003-08-15 TW TW092122538A patent/TW200408015A/zh unknown
- 2003-08-18 KR KR1020057002824A patent/KR20050059077A/ko active IP Right Grant
- 2003-08-18 JP JP2004529512A patent/JP2005536064A/ja active Pending
- 2003-08-18 WO PCT/US2003/025739 patent/WO2004017378A2/en active Application Filing
- 2003-08-18 CN CNA038257971A patent/CN1902738A/zh active Pending
- 2003-08-18 AU AU2003259879A patent/AU2003259879A1/en not_active Abandoned
- 2003-08-18 US US10/525,122 patent/US20060228888A1/en not_active Abandoned
- 2003-08-18 EP EP03788581A patent/EP1535320A4/en not_active Withdrawn
Cited By (4)
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JP2011071528A (ja) * | 2006-06-02 | 2011-04-07 | L'air Liquide-Sa Pour L'etude & L'exploitation Des Procedes Georges Claude | 誘電体フィルムを形成する方法、新規前駆体および半導体製造におけるそれらの使用 |
US8399056B2 (en) | 2006-06-02 | 2013-03-19 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing |
US8853075B2 (en) | 2008-02-27 | 2014-10-07 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process |
US9234275B2 (en) | 2012-12-11 | 2016-01-12 | Tokyo Electron Limited | Method and apparatus of forming metal compound film, and electronic product |
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WO2004017378A3 (en) | 2004-05-06 |
AU2003259879A1 (en) | 2004-03-03 |
EP1535320A4 (en) | 2006-11-15 |
US20060228888A1 (en) | 2006-10-12 |
AU2003259879A8 (en) | 2004-03-03 |
EP1535320A2 (en) | 2005-06-01 |
WO2004017378A2 (en) | 2004-02-26 |
KR20050059077A (ko) | 2005-06-17 |
CN1902738A (zh) | 2007-01-24 |
TW200408015A (en) | 2004-05-16 |
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