JP2005533292A - マイクロリソグラフパターンの製作におけるパターンの認定、パターン形成プロセス、又はパターン形成装置 - Google Patents
マイクロリソグラフパターンの製作におけるパターンの認定、パターン形成プロセス、又はパターン形成装置 Download PDFInfo
- Publication number
- JP2005533292A JP2005533292A JP2005505128A JP2005505128A JP2005533292A JP 2005533292 A JP2005533292 A JP 2005533292A JP 2005505128 A JP2005505128 A JP 2005505128A JP 2005505128 A JP2005505128 A JP 2005505128A JP 2005533292 A JP2005533292 A JP 2005533292A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- die
- different values
- defects
- inspection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 168
- 230000008569 process Effects 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000012797 qualification Methods 0.000 title description 13
- 230000007261 regionalization Effects 0.000 title description 5
- 230000007547 defect Effects 0.000 claims abstract description 115
- 238000013461 design Methods 0.000 claims abstract description 56
- 230000001052 transient effect Effects 0.000 claims abstract description 39
- 230000003252 repetitive effect Effects 0.000 claims abstract description 28
- 238000007689 inspection Methods 0.000 claims description 56
- 238000005286 illumination Methods 0.000 claims description 23
- 238000011156 evaluation Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000005856 abnormality Effects 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 7
- 239000000356 contaminant Substances 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 238000007781 pre-processing Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 60
- 238000012360 testing method Methods 0.000 description 17
- 238000013459 approach Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000002165 resonance energy transfer Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
好適な実施態様は、テストウェーハに対して入ってくるレチクルと処理条件とを認定して所与のレチクル露光ツールの組み合わせに対する利用可能な有用なプロセスウィンドウを最大にする方法である。本方法は、照明源、光近接効果補正アーチファクト、位相シフトされたイメージング、及びイメージング平面で実施される種々の光化学的処理手法の様々な構成の累積作用によって生成される画像を認定する。この手法をテストウェーハに対して実施することにより、最初のプロセス不良である空間領域と、欠陥検査及び計測を実行する候補領域とを識別することが可能となる。
Claims (26)
- 設計パターンを含むレチクルの空間画像をリソグラフ変数の1セットの要素の異なる値に対して収集する段階と、
前記異なる値の少なくとも2つに対応する前記空間画像の少なくとも1ペアを比較することによって前記設計パターン内の異常の存在を特定する段階と、
を含む方法。 - 前記異なる値の1つが基準要素値を表すことを特徴とする請求項1に記載の方法。
- 前記要素は、照明焦点、露光、部分コヒーレンスの程度、照明モード、又は開口数を含むことを特徴とする請求項1に記載の方法。
- 前記レチクルは、シングルダイのレチクル又はマルチダイのレチクルであることを特徴とする請求項1に記載の方法。
- 前記異常は設計パターン欠陥を含むことを特徴とする請求項1に記載の方法。
- 前記異常はレチクル増強手法の欠陥を含むことを特徴とする請求項1に記載の方法。
- 前記異常は異なる値の一部分だけにより印刷することになる過渡的な繰り返し欠陥を含むことを特徴とする請求項1に記載の方法。
- 前記空間画像は異なる値を有する異なる検出器を用いて収集されることを特徴とする請求項1に記載の方法。
- 前記空間画像の1つを用いて他の形式の異常について前記レチクルを検査する段階を更に含み、前記他の形式の異常はレチクルの製造エラー及び汚染物質を含むことを特徴とする請求項1に記載の方法。
- 前記検査はダイ対データベースの比較又はダイ対ダイの比較を含むことを特徴とする請求項9に記載の方法。
- 前記特定段階の前に前記空間画像の少なくとも1ペアを前処理して、その空間画像の少なくとも1ペアから比較的高輝度の値と比較的低輝度の値とを除去する段階を更に含む請求項1に記載の方法。
- 前記異常の位置に基づく評価のために前記レチクル領域を識別する段階を更に含む請求項1に記載の方法。
- 前記評価は、光学条件の変動するレベルでの空間画像評価を含むことを特徴とする請求項12に記載の方法。
- 前記設計パターン内に1つより多い異常が見つかった場合に、前記方法は前記1つより多い異常の直近のレチクル領域により1つより多い異常をビンすることを更に含む請求項1に記載の方法。
- 前記レチクルを用いて実行されることになるリソグラフ処理に対するプロセスウィンドウを特定する段階を更に含む請求項1に記載の方法。
- 前記異常のクリティカルステータスを特定する段階を更に含む請求項1に記載の方法。
- 設計パターンを含むレチクルの空間画像をリソグラフ変数の1セットの要素の異なる値に対して収集する段階と、
前記異なる値の少なくとも2つに対応する前記空間画像の少なくとも1ペアを比較する段階と、
前記レチクルを用いるリソグラフィプロセスが前記比較段階の結果に基づく障害の影響を最も受けやすい前記レチクルの領域を特定する段階と、
を含む方法。 - 前記異なる値の1つが基準要素の値を表すことを特徴とする請求項17に記載の方法。
- 前記領域は、前記基準要素の値で収集されない前記空間画像の少なくとも1ペアに共通する異常と、前記基準要素の値で収集された前記空間画像に共通しない異常とを含むことを特徴とする請求項18に記載の方法。
- 非過渡的な欠陥について設計パターンを含むレチクルを検査する段階と、
リソグラフィ変数のセットの要素の異なる値に対する前記レチクルの空間画像を収集する段階と、
前記空間画像から前記非過渡的な欠陥を減算し、且つ前記異なる値の少なくとも2つに対応する前記空間画像の少なくとも1つのペアを比較することによって、前記レチクル上の過渡的な繰り返し欠陥の存在を特定する段階と、
を含む方法。 - 前記検査段階と前記収集段階とが、実質的に同時に実行されることを特徴とする請求項20に記載の方法。
- 前記検査段階が、前記リソグラフ変数のセットの基準要素の値での前記レチクルを空間イメージングする段階を含む請求項20に記載の方法。
- 前記検査段階が、非空間イメージングレチクル検査システムを使用して実行されることを特徴とする請求項20に記載の方法。
- 前記検査は、ダイ対データベースの比較又はダイ対ダイの比較を含むことを特徴とする請求項20に記載の方法。
- 前記過渡的な繰り返し欠陥に基づいて、前記レチクルを使用して実行されることになるリソグラフィプロセスに対するプロセスウィンドウを特定する段階を更に含む請求項20に記載の方法。
- 前記非過渡的な欠陥は、前記レチクル上にレチクル製造エラー又は汚染物質を含むことを特徴とする請求項20に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US39619702P | 2002-07-15 | 2002-07-15 | |
US48523303P | 2003-07-07 | 2003-07-07 | |
PCT/US2003/021907 WO2004008244A2 (en) | 2002-07-15 | 2003-07-15 | Defect inspection methods that include acquiring aerial images of a reticle for different lithographic process variables |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005533292A true JP2005533292A (ja) | 2005-11-04 |
JP4597859B2 JP4597859B2 (ja) | 2010-12-15 |
Family
ID=30118572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005505128A Expired - Lifetime JP4597859B2 (ja) | 2002-07-15 | 2003-07-15 | マイクロリソグラフパターンの製作におけるパターンの認定、パターン形成プロセス、又はパターン形成装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7418124B2 (ja) |
EP (1) | EP1523696B1 (ja) |
JP (1) | JP4597859B2 (ja) |
KR (1) | KR100979484B1 (ja) |
AU (1) | AU2003247868A1 (ja) |
WO (1) | WO2004008244A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007041600A (ja) * | 2005-08-02 | 2007-02-15 | Kla Tencor Technologies Corp | レティクル設計パターン内の欠陥を検出するための方法および装置 |
JP2008523395A (ja) * | 2004-12-07 | 2008-07-03 | ケイエルエイ−テンコー・テクノロジーズ・コーポレーション | レティクルの設計パターンにおける欠陥を検出し、かつ(あるいは)ソートするためのコンピュータに実装された方法 |
JP2008262148A (ja) * | 2007-03-15 | 2008-10-30 | Kla-Tencor Technologies Corp | リソグラフィマスク用の検査方法及び装置 |
JP2010534408A (ja) * | 2007-07-20 | 2010-11-04 | ケーエルエー−テンカー・コーポレーション | 標準参照ダイ比較検査に用いるための標準参照ダイを生成する方法及びウエハーを検査するための方法 |
Families Citing this family (87)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1416326B1 (en) * | 2002-10-28 | 2008-06-11 | ASML Netherlands B.V. | Method, inspection system, computer program and reference substrate for detecting mask defects |
TWI245169B (en) | 2002-10-28 | 2005-12-11 | Asml Netherlands Bv | Method for detecting defect in mask, computer program, and reference substrate |
CN101778222B (zh) | 2002-12-27 | 2012-06-13 | 株式会社尼康 | 图像处理装置 |
US20050234684A1 (en) * | 2004-04-19 | 2005-10-20 | Mentor Graphics Corp. | Design for manufacturability |
TWI225674B (en) * | 2003-09-03 | 2004-12-21 | Powerchip Semiconductor Corp | Method of defect root cause analysis |
US7234128B2 (en) * | 2003-10-03 | 2007-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for improving the critical dimension uniformity of patterned features on wafers |
US6967709B2 (en) * | 2003-11-26 | 2005-11-22 | International Business Machines Corporation | Overlay and CD process window structure |
US7646906B2 (en) | 2004-01-29 | 2010-01-12 | Kla-Tencor Technologies Corp. | Computer-implemented methods for detecting defects in reticle design data |
US7269804B2 (en) * | 2004-04-02 | 2007-09-11 | Advanced Micro Devices, Inc. | System and method for integrated circuit device design and manufacture using optical rule checking to screen resolution enhancement techniques |
EP1747520B1 (en) | 2004-05-07 | 2018-10-24 | Mentor Graphics Corporation | Integrated circuit layout design methodology with process variation bands |
US20060069958A1 (en) * | 2004-05-09 | 2006-03-30 | Sawicki Joseph D | Defect location identification for microdevice manufacturing and test |
US7620930B2 (en) | 2004-08-24 | 2009-11-17 | Asml Masktools B.V. | Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography |
JP4904034B2 (ja) | 2004-09-14 | 2012-03-28 | ケーエルエー−テンカー コーポレイション | レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体 |
DE102005032601A1 (de) * | 2005-01-07 | 2006-07-20 | Heidelberger Druckmaschinen Ag | Druckmaschine |
DE102005009536A1 (de) | 2005-02-25 | 2006-08-31 | Carl Zeiss Sms Gmbh | Verfahren zur Maskeninspektion im Rahmen des Maskendesigns und der Maskenherstellung |
US7297453B2 (en) * | 2005-04-13 | 2007-11-20 | Kla-Tencor Technologies Corporation | Systems and methods for mitigating variances on a patterned wafer using a prediction model |
US7300729B2 (en) * | 2005-04-13 | 2007-11-27 | Kla-Tencor Technologies Corporation | Method for monitoring a reticle |
US7303842B2 (en) * | 2005-04-13 | 2007-12-04 | Kla-Tencor Technologies Corporation | Systems and methods for modifying a reticle's optical properties |
US7300725B2 (en) * | 2005-04-13 | 2007-11-27 | Kla-Tencor Technologies Corporation | Method for determining and correcting reticle variations |
KR100674973B1 (ko) * | 2005-05-25 | 2007-01-29 | 삼성전자주식회사 | 투과율이 다른 복수의 다이들을 갖는 포토마스크의 결함검사 방법 |
US9037280B2 (en) * | 2005-06-06 | 2015-05-19 | Kla-Tencor Technologies Corp. | Computer-implemented methods for performing one or more defect-related functions |
US8041103B2 (en) | 2005-11-18 | 2011-10-18 | Kla-Tencor Technologies Corp. | Methods and systems for determining a position of inspection data in design data space |
US7570796B2 (en) | 2005-11-18 | 2009-08-04 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
US7676077B2 (en) | 2005-11-18 | 2010-03-09 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
US7570800B2 (en) * | 2005-12-14 | 2009-08-04 | Kla-Tencor Technologies Corp. | Methods and systems for binning defects detected on a specimen |
WO2007093193A1 (en) * | 2006-02-16 | 2007-08-23 | Freescale Semiconductor, Inc. | Method of detecting defects in an integrated circuit |
US7711177B2 (en) * | 2006-06-08 | 2010-05-04 | Kla-Tencor Technologies Corp. | Methods and systems for detecting defects on a specimen using a combination of bright field channel data and dark field channel data |
US8102408B2 (en) * | 2006-06-29 | 2012-01-24 | Kla-Tencor Technologies Corp. | Computer-implemented methods and systems for determining different process windows for a wafer printing process for different reticle designs |
US8213024B2 (en) * | 2006-08-01 | 2012-07-03 | Applied Materials Israel, Ltd. | Method and system for aerial imaging of a reticle |
US8056022B2 (en) | 2006-11-09 | 2011-11-08 | Mentor Graphics Corporation | Analysis optimizer |
US7904845B2 (en) * | 2006-12-06 | 2011-03-08 | Kla-Tencor Corp. | Determining locations on a wafer to be reviewed during defect review |
US7877722B2 (en) | 2006-12-19 | 2011-01-25 | Kla-Tencor Corp. | Systems and methods for creating inspection recipes |
US8194968B2 (en) | 2007-01-05 | 2012-06-05 | Kla-Tencor Corp. | Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions |
KR100867634B1 (ko) * | 2007-03-09 | 2008-11-10 | 삼성전자주식회사 | 웨이퍼 시료 분석 방법 |
US7962863B2 (en) | 2007-05-07 | 2011-06-14 | Kla-Tencor Corp. | Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer |
US7738093B2 (en) | 2007-05-07 | 2010-06-15 | Kla-Tencor Corp. | Methods for detecting and classifying defects on a reticle |
US8213704B2 (en) | 2007-05-09 | 2012-07-03 | Kla-Tencor Corp. | Methods and systems for detecting defects in a reticle design pattern |
JP5064116B2 (ja) * | 2007-05-30 | 2012-10-31 | Hoya株式会社 | フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法 |
US7711514B2 (en) | 2007-08-10 | 2010-05-04 | Kla-Tencor Technologies Corp. | Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan |
TWI469235B (zh) | 2007-08-20 | 2015-01-11 | Kla Tencor Corp | 決定實際缺陷是潛在系統性缺陷或潛在隨機缺陷之由電腦實施之方法 |
US8139844B2 (en) | 2008-04-14 | 2012-03-20 | Kla-Tencor Corp. | Methods and systems for determining a defect criticality index for defects on wafers |
US9710903B2 (en) | 2008-06-11 | 2017-07-18 | Kla-Tencor Corp. | System and method for detecting design and process defects on a wafer using process monitoring features |
WO2010014609A2 (en) | 2008-07-28 | 2010-02-04 | Kla-Tencor Corporation | Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer |
US8775101B2 (en) | 2009-02-13 | 2014-07-08 | Kla-Tencor Corp. | Detecting defects on a wafer |
US8204297B1 (en) | 2009-02-27 | 2012-06-19 | Kla-Tencor Corp. | Methods and systems for classifying defects detected on a reticle |
US8112241B2 (en) | 2009-03-13 | 2012-02-07 | Kla-Tencor Corp. | Methods and systems for generating an inspection process for a wafer |
US8781781B2 (en) | 2010-07-30 | 2014-07-15 | Kla-Tencor Corp. | Dynamic care areas |
US9170211B2 (en) | 2011-03-25 | 2015-10-27 | Kla-Tencor Corp. | Design-based inspection using repeating structures |
US9087367B2 (en) | 2011-09-13 | 2015-07-21 | Kla-Tencor Corp. | Determining design coordinates for wafer defects |
US8831334B2 (en) | 2012-01-20 | 2014-09-09 | Kla-Tencor Corp. | Segmentation for wafer inspection |
US8826200B2 (en) | 2012-05-25 | 2014-09-02 | Kla-Tencor Corp. | Alteration for wafer inspection |
US8948495B2 (en) | 2012-08-01 | 2015-02-03 | Kla-Tencor Corp. | Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer |
US9189844B2 (en) | 2012-10-15 | 2015-11-17 | Kla-Tencor Corp. | Detecting defects on a wafer using defect-specific information |
US8948494B2 (en) | 2012-11-12 | 2015-02-03 | Kla-Tencor Corp. | Unbiased wafer defect samples |
US9053527B2 (en) | 2013-01-02 | 2015-06-09 | Kla-Tencor Corp. | Detecting defects on a wafer |
US9134254B2 (en) | 2013-01-07 | 2015-09-15 | Kla-Tencor Corp. | Determining a position of inspection system output in design data space |
US9311698B2 (en) | 2013-01-09 | 2016-04-12 | Kla-Tencor Corp. | Detecting defects on a wafer using template image matching |
WO2014149197A1 (en) | 2013-02-01 | 2014-09-25 | Kla-Tencor Corporation | Detecting defects on a wafer using defect-specific and multi-channel information |
US9865512B2 (en) | 2013-04-08 | 2018-01-09 | Kla-Tencor Corp. | Dynamic design attributes for wafer inspection |
US9310320B2 (en) | 2013-04-15 | 2016-04-12 | Kla-Tencor Corp. | Based sampling and binning for yield critical defects |
US9612541B2 (en) * | 2013-08-20 | 2017-04-04 | Kla-Tencor Corporation | Qualifying patterns for microlithography |
US9536299B2 (en) | 2014-01-16 | 2017-01-03 | Kla-Tencor Corp. | Pattern failure discovery by leveraging nominal characteristics of alternating failure modes |
US9547892B2 (en) | 2014-05-06 | 2017-01-17 | Kla-Tencor Corporation | Apparatus and methods for predicting wafer-level defect printability |
US9478019B2 (en) | 2014-05-06 | 2016-10-25 | Kla-Tencor Corp. | Reticle inspection using near-field recovery |
US9400865B2 (en) | 2014-06-13 | 2016-07-26 | Kla-Tencor Corp. | Extracting comprehensive design guidance for in-line process control tools and methods |
US10074036B2 (en) * | 2014-10-21 | 2018-09-11 | Kla-Tencor Corporation | Critical dimension uniformity enhancement techniques and apparatus |
US10483081B2 (en) | 2014-10-22 | 2019-11-19 | Kla-Tencor Corp. | Self directed metrology and pattern classification |
US10267746B2 (en) | 2014-10-22 | 2019-04-23 | Kla-Tencor Corp. | Automated pattern fidelity measurement plan generation |
US10062012B1 (en) | 2014-10-22 | 2018-08-28 | Kla-Tencor Corp. | Finding patterns in a design based on the patterns and their surroundings |
US9891538B2 (en) | 2015-03-16 | 2018-02-13 | Kla-Tencor Corp. | Adaptive sampling for process window determination |
US10012599B2 (en) | 2015-04-03 | 2018-07-03 | Kla-Tencor Corp. | Optical die to database inspection |
US10062543B2 (en) | 2015-06-23 | 2018-08-28 | Kla-Tencor Corp. | Determining multi-patterning step overlay error |
WO2017027366A1 (en) | 2015-08-10 | 2017-02-16 | Kla-Tencor Corporation | Apparatus and methods for predicting wafer-level defect printability |
US10395361B2 (en) | 2015-08-10 | 2019-08-27 | Kla-Tencor Corporation | Apparatus and methods for inspecting reticles |
US10359371B2 (en) | 2015-08-24 | 2019-07-23 | Kla-Tencor Corp. | Determining one or more characteristics of a pattern of interest on a specimen |
US10186026B2 (en) | 2015-11-17 | 2019-01-22 | Kla-Tencor Corp. | Single image detection |
US11580375B2 (en) | 2015-12-31 | 2023-02-14 | Kla-Tencor Corp. | Accelerated training of a machine learning based model for semiconductor applications |
EP3398123A4 (en) | 2015-12-31 | 2019-08-28 | KLA - Tencor Corporation | ACCELERATED TRAINING OF A MODEL BASED ON AUTOMATIC LEARNING FOR SEMICONDUCTOR APPLICATIONS |
US9916965B2 (en) | 2015-12-31 | 2018-03-13 | Kla-Tencor Corp. | Hybrid inspectors |
US9915625B2 (en) | 2016-01-04 | 2018-03-13 | Kla-Tencor Corp. | Optical die to database inspection |
US10043261B2 (en) | 2016-01-11 | 2018-08-07 | Kla-Tencor Corp. | Generating simulated output for a specimen |
US9940705B2 (en) | 2016-05-04 | 2018-04-10 | Kla-Tencor Corporation | System, method and computer program product for detecting defects in a fabricated target component using consistent modulation for the target and reference components |
US10551827B2 (en) | 2017-07-25 | 2020-02-04 | Kla-Tencor Corporation | Hybrid inspection system for efficient process window discovery |
US10503078B2 (en) | 2017-09-01 | 2019-12-10 | Kla-Tencor Corporation | Criticality analysis augmented process window qualification sampling |
WO2019121486A1 (en) * | 2017-12-22 | 2019-06-27 | Asml Netherlands B.V. | Process window based on defect probability |
US10599951B2 (en) | 2018-03-28 | 2020-03-24 | Kla-Tencor Corp. | Training a neural network for defect detection in low resolution images |
US11551348B2 (en) | 2019-04-09 | 2023-01-10 | KLA Corp. | Learnable defect detection for semiconductor applications |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10123062A (ja) * | 1996-10-10 | 1998-05-15 | Samsung Electron Co Ltd | 透過光及び反射光を用いたエアリアルイメージ測定装置及びこれを用いた測定方法 |
JP2000305246A (ja) * | 1999-04-16 | 2000-11-02 | Nec Corp | パターン線幅予測方法及びそれを用いたマスクパターン修正方法 |
JP2001159810A (ja) * | 1999-09-03 | 2001-06-12 | Applied Materials Inc | フォトリソグラフィシミュレーションによるレティクル検査方法及びシステム |
JP2001235853A (ja) * | 1999-10-13 | 2001-08-31 | Applied Materials Inc | 空中画像を使用するレチクル検査のための方法及び装置 |
WO2002044699A2 (de) * | 2000-11-30 | 2002-06-06 | Sigma-C Gmbh | Verfahren und vorrichtung zur bestimmung von eigenschaften einer integrierten schaltung |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4340808A (en) * | 1979-03-09 | 1982-07-20 | Donohoo Dan J | Time logging apparatus |
US4578810A (en) * | 1983-08-08 | 1986-03-25 | Itek Corporation | System for printed circuit board defect detection |
US5046109A (en) * | 1986-03-12 | 1991-09-03 | Nikon Corporation | Pattern inspection apparatus |
US4872210A (en) * | 1988-03-25 | 1989-10-03 | Alexander Benages | Curbside mailbox signal |
USD315821S (en) * | 1988-08-26 | 1991-03-26 | Lorenzi Josepha E | Mailbox |
JP3212389B2 (ja) * | 1992-10-26 | 2001-09-25 | 株式会社キリンテクノシステム | 固体上の異物検査方法 |
US5377908A (en) * | 1993-08-04 | 1995-01-03 | Bobrick Washroom Equipment, Inc. | Dual sanitary napkin disposal |
US6091846A (en) * | 1996-05-31 | 2000-07-18 | Texas Instruments Incorporated | Method and system for anomaly detection |
US5664728A (en) * | 1996-06-10 | 1997-09-09 | Jones; Lea | Mail box signal device |
US5954264A (en) * | 1996-08-09 | 1999-09-21 | Keller; Louis D. | Rural mailbox with remote door opener |
US5917411A (en) * | 1997-06-23 | 1999-06-29 | Baggarly; James H. | Electronic mailbox with keypad alarm system |
US6757645B2 (en) * | 1997-09-17 | 2004-06-29 | Numerical Technologies, Inc. | Visual inspection and verification system |
US5965306A (en) | 1997-10-15 | 1999-10-12 | International Business Machines Corporation | Method of determining the printability of photomask defects |
US6171737B1 (en) | 1998-02-03 | 2001-01-09 | Advanced Micro Devices, Inc. | Low cost application of oxide test wafer for defect monitor in photolithography process |
US5932377A (en) * | 1998-02-24 | 1999-08-03 | International Business Machines Corporation | Exact transmission balanced alternating phase-shifting mask for photolithography |
US6529621B1 (en) | 1998-12-17 | 2003-03-04 | Kla-Tencor | Mechanisms for making and inspecting reticles |
US6373975B1 (en) | 1999-01-25 | 2002-04-16 | International Business Machines Corporation | Error checking of simulated printed images with process window effects included |
US7106895B1 (en) | 1999-05-05 | 2006-09-12 | Kla-Tencor | Method and apparatus for inspecting reticles implementing parallel processing |
US6701004B1 (en) * | 1999-12-22 | 2004-03-02 | Intel Corporation | Detecting defects on photomasks |
US6665065B1 (en) * | 2001-04-09 | 2003-12-16 | Advanced Micro Devices, Inc. | Defect detection in pellicized reticles via exposure at short wavelengths |
JP4038356B2 (ja) * | 2001-04-10 | 2008-01-23 | 株式会社日立製作所 | 欠陥データ解析方法及びその装置並びにレビューシステム |
US6902855B2 (en) | 2002-07-15 | 2005-06-07 | Kla-Tencor Technologies | Qualifying patterns, patterning processes, or patterning apparatus in the fabrication of microlithographic patterns |
-
2003
- 2003-07-15 AU AU2003247868A patent/AU2003247868A1/en not_active Abandoned
- 2003-07-15 JP JP2005505128A patent/JP4597859B2/ja not_active Expired - Lifetime
- 2003-07-15 KR KR1020057000790A patent/KR100979484B1/ko active IP Right Grant
- 2003-07-15 EP EP03764592.6A patent/EP1523696B1/en not_active Expired - Lifetime
- 2003-07-15 US US10/619,943 patent/US7418124B2/en active Active
- 2003-07-15 WO PCT/US2003/021907 patent/WO2004008244A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10123062A (ja) * | 1996-10-10 | 1998-05-15 | Samsung Electron Co Ltd | 透過光及び反射光を用いたエアリアルイメージ測定装置及びこれを用いた測定方法 |
JP2000305246A (ja) * | 1999-04-16 | 2000-11-02 | Nec Corp | パターン線幅予測方法及びそれを用いたマスクパターン修正方法 |
JP2001159810A (ja) * | 1999-09-03 | 2001-06-12 | Applied Materials Inc | フォトリソグラフィシミュレーションによるレティクル検査方法及びシステム |
JP2001235853A (ja) * | 1999-10-13 | 2001-08-31 | Applied Materials Inc | 空中画像を使用するレチクル検査のための方法及び装置 |
WO2002044699A2 (de) * | 2000-11-30 | 2002-06-06 | Sigma-C Gmbh | Verfahren und vorrichtung zur bestimmung von eigenschaften einer integrierten schaltung |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008523395A (ja) * | 2004-12-07 | 2008-07-03 | ケイエルエイ−テンコー・テクノロジーズ・コーポレーション | レティクルの設計パターンにおける欠陥を検出し、かつ(あるいは)ソートするためのコンピュータに実装された方法 |
JP2012015529A (ja) * | 2004-12-07 | 2012-01-19 | Kla-Encor Corp | レティクルの設計パターンにおける欠陥を検出し、かつ(あるいは)ソートするためのコンピュータに実装された方法 |
JP2007041600A (ja) * | 2005-08-02 | 2007-02-15 | Kla Tencor Technologies Corp | レティクル設計パターン内の欠陥を検出するための方法および装置 |
JP2008262148A (ja) * | 2007-03-15 | 2008-10-30 | Kla-Tencor Technologies Corp | リソグラフィマスク用の検査方法及び装置 |
JP2010534408A (ja) * | 2007-07-20 | 2010-11-04 | ケーエルエー−テンカー・コーポレーション | 標準参照ダイ比較検査に用いるための標準参照ダイを生成する方法及びウエハーを検査するための方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4597859B2 (ja) | 2010-12-15 |
KR100979484B1 (ko) | 2010-09-02 |
WO2004008244A2 (en) | 2004-01-22 |
EP1523696A2 (en) | 2005-04-20 |
EP1523696B1 (en) | 2016-12-21 |
US7418124B2 (en) | 2008-08-26 |
KR20050048587A (ko) | 2005-05-24 |
WO2004008244A3 (en) | 2004-07-29 |
US20040091142A1 (en) | 2004-05-13 |
AU2003247868A8 (en) | 2004-02-02 |
AU2003247868A1 (en) | 2004-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4597859B2 (ja) | マイクロリソグラフパターンの製作におけるパターンの認定、パターン形成プロセス、又はパターン形成装置 | |
US6902855B2 (en) | Qualifying patterns, patterning processes, or patterning apparatus in the fabrication of microlithographic patterns | |
US7769225B2 (en) | Methods and systems for detecting defects in a reticle design pattern | |
US8213704B2 (en) | Methods and systems for detecting defects in a reticle design pattern | |
KR102329153B1 (ko) | 두 개의 포토마스크의 비교에 의한 포토마스크의 검사 | |
JP5602146B2 (ja) | レチクル上の欠陥を検出する方法及びシステム | |
US7379175B1 (en) | Methods and systems for reticle inspection and defect review using aerial imaging | |
KR101345030B1 (ko) | 레티클의 설계 패턴에서의 결함들을 검출 및/또는 분류하기 위한 컴퓨터 구현 방법들 | |
US7027143B1 (en) | Methods and systems for inspecting reticles using aerial imaging at off-stepper wavelengths | |
US7123356B1 (en) | Methods and systems for inspecting reticles using aerial imaging and die-to-database detection | |
JP4940056B2 (ja) | リソグラフィマスク用の検査方法及び装置 | |
JP6594876B2 (ja) | フォトリソグラフィレチクル認定方法及びシステム | |
US10401305B2 (en) | Time-varying intensity map generation for reticles | |
JP2015508513A (ja) | データベース支援再適格性レチクル検査の方法および装置 | |
US20020087943A1 (en) | Exposure method, exposure system and recording medium | |
TWI766127B (zh) | 優化微影對焦參數的方法 | |
KR100755049B1 (ko) | 포토마스크의 결함 분석방법 | |
CN117546093A (zh) | 工艺窗鉴定调制布局 | |
KR20010003507A (ko) | 포토마스크 검사방법 | |
Seo et al. | Evaluation of litho printability of DRAM contact hole patterns with various programmed defects |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060619 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090526 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090826 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090902 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090928 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091005 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20091026 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100202 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100506 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100513 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100602 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100609 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100624 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100831 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100922 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4597859 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131001 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |