JP2005254637A - Water-repellent structure and its production process - Google Patents

Water-repellent structure and its production process Download PDF

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JP2005254637A
JP2005254637A JP2004069931A JP2004069931A JP2005254637A JP 2005254637 A JP2005254637 A JP 2005254637A JP 2004069931 A JP2004069931 A JP 2004069931A JP 2004069931 A JP2004069931 A JP 2004069931A JP 2005254637 A JP2005254637 A JP 2005254637A
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film
convex
water
repellent structure
support layer
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Ichiro Kono
一郎 河野
Kazuyoshi Arai
一能 新井
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Casio Computer Co Ltd
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Casio Computer Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To decrease the number of production steps of a water-repellent structure having fine irregularity form. <P>SOLUTION: When Al is deposited by 8,000-10,000 Å on the upper surface of a protrusion forming film 11 composed of SiO<SB>2</SB>by sputtering, crystal grains of Al grow greatly and the surface becomes irregular thus forming a surface irregular layer 12 having protrusions 12a. When the surface irregular layer 12 and the protrusion forming film 11 are etched continuously by anisotropic dry etching, irregularities corresponding to those on the surface of the surface irregular layer 12 are formed on the upper surface side of the etched protrusion forming film 11. In this regard, the number of production steps can be decreased as compared with that of photolithography method. When a water-repellent film is formed on the surface of the protrusions and recesses thus obtained, a water-repellent structure having fine irregularity form can be obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

この発明は撥水性構造およびその製造方法に関する。   The present invention relates to a water-repellent structure and a method for producing the same.

インクジェットプリンタや表示素子の電極表面に撥水性を持たせ、インクとの摩擦抵抗あるいは集滴性を向上する検討がなされている。基材の撥水性、親水性を示す接触角に関して成り立つヤングの式によれば、基材の表面が滑らかでなく微細な凹凸構造を有し、その実表面積が大きくなるとその大きくなった倍率に比例して接触角が増大する。このことは接触角が正（９０度以下）の場合も負（９０度以上）の場合も成立するため、親水性を示す基材はより親水性を増し、撥水性を示す基材はより撥水性を増すようになる。   Studies have been made to provide water repellency to the electrode surfaces of ink jet printers and display elements to improve frictional resistance with ink or droplet collection. According to Young's formula, which is related to the contact angle indicating the water repellency and hydrophilicity of the base material, the surface of the base material is not smooth but has a fine concavo-convex structure. The contact angle increases. This is true regardless of whether the contact angle is positive (90 degrees or less) or negative (90 degrees or more). Therefore, a hydrophilic substrate is more hydrophilic and a water-repellent substrate is more repellent. Increases aqueousness.

図７（ａ）において、基材である固体Ｓの表面が滑らかな場合、固体Ｓ上でほぼ半球状となる液滴Ｌはその接触角θが９０度程度であるが、図７（ｂ）に示すように、固体Ｓの表面に微細な凹凸が形成され、表面積がｒ倍とされた固体Ｓ上では、液滴Ｌはその接触角θが大きい、球状に近い状態となり、撥水性の大きいものとなる。このような撥水性の大きい撥水性構造を得る従来の方法として、基材の表面にフォトリソグラフィ法により凸凹を形成し、この凸凹の表面に撥水膜を形成したものがある（例えば、特許文献１参照）。   In FIG. 7A, when the surface of the solid S that is the base material is smooth, the droplet L that is substantially hemispherical on the solid S has a contact angle θ of about 90 degrees, but FIG. As shown in FIG. 4, on the solid S where the surface of the solid S has fine irregularities and the surface area is r times, the droplet L has a large contact angle θ and is in a nearly spherical state, and has a high water repellency. It will be a thing. As a conventional method for obtaining such a water-repellent structure having a large water repellency, there is a method in which irregularities are formed on the surface of a substrate by photolithography, and a water-repellent film is formed on the irregular surface (for example, Patent Documents). 1).

特開２０００−２２９４１０号公報JP 2000-229410 A

上記従来の撥水性構造では、基材の表面にフォトリソグラフィ法により凸凹を形成しているため、パターン形成用マスクを必要とする上、レジスト塗布、プリベーク、露光、現像、リンス、ポストベーク、エッチング、レジスト剥離などの工程が必要となり、製造工程数が多いという問題があった。   In the above conventional water-repellent structure, since the surface of the substrate is uneven by photolithography, a mask for pattern formation is required, and resist coating, pre-baking, exposure, development, rinsing, post-baking, and etching are required. There is a problem that a process such as resist stripping is required and the number of manufacturing processes is large.

そこで、この発明は、製造工程数を少なくすることができる撥水性構造およびその製造方法を提供することを目的とする。   Accordingly, an object of the present invention is to provide a water-repellent structure capable of reducing the number of manufacturing steps and a method for manufacturing the same.

この発明は、上記目的を達成するため、基材上に凸部形成用膜を形成し、前記凸部形成用膜上に表面に複数の凸凹部を有する表面凸凹膜を形成し、前記表面凸凹膜および前記凸部形成用膜を、異方性ドライエッチングによって連続してエッチングすることにより、前記表面凸凹膜の表面に形成された凸凹形状に応じた形状を有して、多数の凸部を有する凸部支持層を形成し、前記凸部を含む前記凸部支持層の表面に撥水膜を形成することを特徴とするものである。   In order to achieve the above object, the present invention forms a convex-forming film on a substrate, forms a surface-concave film having a plurality of convex-concave portions on the surface, and forms the convex-concave film on the surface. By continuously etching the film and the film for forming the convex part by anisotropic dry etching, the film has a shape corresponding to the concave and convex shape formed on the surface of the surface uneven film, and a large number of convex parts are formed. And a water repellent film is formed on the surface of the convex portion support layer including the convex portion.

この発明によれば、凸部形成用膜の上面に形成された表面凸凹膜および凸部形成用膜を、異方性ドライエッチングによって連続してエッチングすることにより、表面凸凹膜の表面の凸凹形状に応じた形状を有して、多数の凸部を有する凸部支持層を形成することができて、従来のフォトリソグラフィ法による場合と比較して、製造工程数を少なくすることができ、比較的容易に低コストで形成することができる。   According to the present invention, the surface irregularity film formed on the upper surface of the convexity-forming film and the convexity-forming film are continuously etched by anisotropic dry etching, so that the irregularity of the surface of the surface irregularity film is obtained. It is possible to form a convex support layer having a large number of convex portions, and to reduce the number of manufacturing steps as compared with the conventional photolithography method. It can be formed easily and at low cost.

（第１実施形態）
図１はこの発明の第１実施形態としての撥水性構造の一部の断面図を示す。この撥水性構造では、基材１の上面にＳｉＯ2からなる凸部支持層２が設けられている。凸部支持層２の上面には多数の凸部３が一体的に形成されている。この場合、凸部３はランダムに配置され、その高さは異なっている。凸部３を含む凸部支持層２の表面には撥水膜４が設けられている。 (First embodiment)
FIG. 1 shows a partial cross-sectional view of a water-repellent structure as a first embodiment of the present invention. In the water-repellent structures, protrusions supporting layer 2 made of SiO 2 is provided on the upper surface of the substrate 1. A large number of convex portions 3 are integrally formed on the upper surface of the convex portion supporting layer 2. In this case, the convex portions 3 are randomly arranged and have different heights. A water repellent film 4 is provided on the surface of the convex support layer 2 including the convex part 3.

次に、この撥水性構造の製造方法の一例について説明する。まず、図２に示すように、基材１の上面に、蒸着法、スパッタ法、ＣＶＤ法等により、ＳｉＯ2からなる凸部形成用膜１１を膜厚１０００〜１００００Åに成膜する。次に、凸部形成用膜１１の上面に、スパッタ法により、Ａｌからなる表面凸凹膜１２を形成する。ここで、凸部形成用膜１１の上面にスパッタ法により成膜されるＡｌの膜厚を８０００〜１００００Åとする。スパッタ法により成膜するＡｌの膜厚をこの程度の膜厚に比較的厚く形成すると、Ａｌの結晶粒子が大きく成長し、表面が荒れて凸凹となる。ここで、表面凸凹膜１２の表面の凸部を符号１２ａで示す。この場合、凸部１２ａはランダムに配置され、その高さは異なっている。なお、凸部支持層の材料はＳｉＯ2に限らずＳｉＮ等であってもよい。 Next, an example of a method for producing this water-repellent structure will be described. First, as shown in FIG. 2, a convex portion forming film 11 made of SiO 2 is formed on the upper surface of the base material 1 by a vapor deposition method, a sputtering method, a CVD method or the like to a film thickness of 1000 to 10,000 mm. Next, a surface uneven film 12 made of Al is formed on the upper surface of the protrusion forming film 11 by sputtering. Here, the film thickness of Al formed on the upper surface of the projection forming film 11 by sputtering is 8000 to 10,000 mm. When the film thickness of Al deposited by sputtering is made relatively large to such a film thickness, Al crystal grains grow large, and the surface becomes rough and uneven. Here, the convex part of the surface of the surface uneven film 12 is shown with the code | symbol 12a. In this case, the convex portions 12a are randomly arranged and have different heights. The material of the convex support layer is not limited to SiO 2 but may be SiN or the like.

次に、１Ｐａ以下の真空状態でＣＦ4とＯ2の混合プラズマを発生することができるヘリコン式プラズマエッチング装置を用い、凸部１２ａを含む表面凸凹膜１２をドライエッチングする。すると、Ａｌは上記プラズマで発生したＦ、Ｏ、Ｃラジカルと反応しないため、Ｆ、Ｏ、ＣイオンもしくはＦ、Ｏ、Ｃ原子との衝突によるスパッタエッチングのみが行なわれて、エッチング方向が主に垂直方向となる異方性ドライエッチングとなる。この場合、エッチングレートは比較的遅く、垂直形状（高アスペク比）の加工が可能となる。 Next, using the helicon plasma etching apparatus capable of generating a mixed plasma of CF 4 and O 2 in a vacuum state of 1 Pa or less, the surface uneven film 12 including the protrusions 12a is dry etched. Then, since Al does not react with the F, O, and C radicals generated by the plasma, only sputter etching by collision with F, O, C ions or F, O, C atoms is performed, and the etching direction is mainly used. This is anisotropic dry etching in the vertical direction. In this case, the etching rate is relatively slow, and a vertical shape (high aspect ratio) can be processed.

この結果、凸部１２ａを含む表面凸凹膜１２の表面側がその高さ方向の形状をほぼ維持した状態でほぼ均等にエッチングされる。こうして、凸部１２ａ下以外の領域における表面凸凹膜１２が完全に除去される状態までエッチングすると、図３に示すようになる。この状態では、凸部形成用膜１１の上面に図２に示す凸部１２ａに応じた凸部１２ｂが形成され、凸部１２ｂ下以外の領域における凸部形成用膜１１の上面が露出されている。   As a result, the surface of the surface irregular film 12 including the convex portion 12a is etched almost uniformly while maintaining the shape in the height direction. In this way, when etching is performed until the surface uneven film 12 in the region other than under the protrusion 12a is completely removed, the result is as shown in FIG. In this state, the convex portion 12b corresponding to the convex portion 12a shown in FIG. 2 is formed on the upper surface of the convex portion forming film 11, and the upper surface of the convex portion forming film 11 in the region other than the lower portion of the convex portion 12b is exposed. Yes.

そして、上記ドライエッチングを続行すると、凸部１２ｂおよび凸部１２ｂ下以外の領域における凸部形成用膜１１がエッチングされる。この場合、上記ヘリコン式プラズマエッチング装置では、高真空状態でプラズマを発生することができるため、原子、イオン等の平均自由行程が長くとれ、且つ、基材１側にバイアスを印加することで、プラズマ内に発生したイオンを被エッチング膜つまり凸部形成用膜１１の露出された表面に当て、その部分を改質しながらラジカルでさらにエッチングを促進するため、ＳｉＯ2からなる凸部形成用膜１１に対してＡｌからなる凸部１２ｂと比べて高速で且つ垂直形状（高アスペク比）の加工が可能となる。また、エッチングによって凸部１２ｂが完全に除去された箇所では、引き続きその下の凸部形成用膜１１がエッチングされる。 When the dry etching is continued, the convex forming film 11 in the region other than the convex portion 12b and the convex portion 12b is etched. In this case, in the helicon plasma etching apparatus, since plasma can be generated in a high vacuum state, the mean free path of atoms, ions, etc. can be taken long, and by applying a bias to the substrate 1 side, Ions generated in the plasma are applied to the film to be etched, that is, the exposed surface of the film 11 for forming the convex portion, and the film for forming the convex portion made of SiO 2 is used to further promote etching with radicals while modifying the portion. 11 can be processed at a higher speed and with a vertical shape (high aspect ratio) than the convex portion 12b made of Al. Further, at the portion where the convex portion 12b is completely removed by etching, the underlying convex portion forming film 11 is etched.

そして、更にドライエッチングを続行して、凸部形成用膜１１のエッチング量が５００〜２０００Åとなるまでエッチングする。すると、図４に示すように、基材１の上面に凸部形成用膜１１の一部からなる凸部支持層２が形成され、且つ、凸部支持層２の上面に、表面凸凹膜１２の表面の凸凹形状に応じた形状の凸凹、つまり微細で垂直形状の良好な多数の凸部３が形成される。この状態では、多数の凸部３はランダムに配置され、その高さは異なっている。また、多数の凸部３のうちの最も高い凸部３上にはＡｌが柱状突起１２ｃとして残っている。次に、この残存する柱状突起１２ｃをＮａＯＨ溶液を用いてエッチングして除去する。   Further, dry etching is further continued until the etching amount of the projection forming film 11 reaches 500 to 2000 mm. Then, as shown in FIG. 4, the convex support layer 2 composed of a part of the convex forming film 11 is formed on the upper surface of the substrate 1, and the surface irregular film 12 is formed on the upper surface of the convex support layer 2. Are formed in accordance with the uneven shape of the surface, that is, a large number of fine convex portions 3 having a fine vertical shape. In this state, a large number of convex portions 3 are arranged at random and their heights are different. In addition, Al remains as columnar protrusions 12 c on the highest protrusion 3 among the many protrusions 3. Next, the remaining columnar protrusions 12c are removed by etching using a NaOH solution.

次に、図１に示すように、凸部３を含む凸部支持層２の表面に、撥水剤をコーティングして、撥水膜４を形成する。この場合、撥水剤としてシラザンオリゴマー［ＣＦ3（ＣＥ2）7（ＣＨ2）2ＳｉＮＨ3/2］を用いると、透明で高絶縁性の撥水膜４を形成することができる。かくして、図１に示す撥水性構造が得られる。 Next, as shown in FIG. 1, a water repellent film 4 is formed by coating the surface of the convex support layer 2 including the convex portions 3 with a water repellent. In this case, when a silazane oligomer [CF 3 (CE 2 ) 7 (CH 2 ) 2 SiNH 3/2 ] is used as the water repellent, the transparent and highly insulating water repellent film 4 can be formed. Thus, the water repellent structure shown in FIG. 1 is obtained.

以上のように、上記製造方法では、凸部形成用膜１１の上面に形成された表面凸凹膜１２および凸部形成用膜１１を連続してエッチングすると、表面凸凹膜１２の表面の凸凹形状に応じた形状の凸凹つまり多数の凸部３を有する凸部支持層２を形成することができる。したがって、従来のフォトリソグラフィ法による場合と比較して、製造工程数を少なくすることができて、比較的容易に形成することができ、またパターン形成用マスク等の部材を必要としないため、製造コストを低減させることができる。   As described above, in the above manufacturing method, when the surface uneven film 12 and the film 11 for forming the convex portion formed on the upper surface of the convex forming film 11 are continuously etched, the surface of the surface uneven film 12 is formed into the uneven shape. The convex support layer 2 having irregularities corresponding to the shape, that is, a large number of convex portions 3, can be formed. Therefore, the number of manufacturing steps can be reduced compared to the case of using the conventional photolithography method, and it can be formed relatively easily, and a member such as a mask for pattern formation is not required. Cost can be reduced.

また、ＳｉＯ2からなる凸部３を含む凸部支持層２およびシラザンオリゴマーからなる撥水膜４は透明であるため、基材１をガラス等の透明な材料によって形成すると、図１に示す撥水性構造全体を透明とすることができる。 Further, since the convex support layer 2 including the convex portion 3 made of SiO 2 and the water repellent film 4 made of silazane oligomer are transparent, when the substrate 1 is formed of a transparent material such as glass, the repellent property shown in FIG. The entire aqueous structure can be transparent.

なお、図４に示すＡｌからなる柱状突起１２ｃを残したままで、柱状突起１２ｃおよび凸部３を含む凸部支持層２の表面に撥水膜４を形成するようにしてもよい。   Note that the water-repellent film 4 may be formed on the surface of the convex support layer 2 including the columnar protrusions 12c and the protrusions 3 while leaving the columnar protrusions 12c made of Al shown in FIG.

ここで、具体的な数値の一例について説明する。凸部形成用膜１１の膜厚は２０００Åとし凸部１２ａを含む表面凸凹膜１２の膜厚は８０００Åとし、上記ヘリコン式プラズマエッチング装置を用いてドライエッチングを行なった。エッチング条件は、ソースＲＦ２５０Ｗ、バイアス１５０Ｗ、プロセス圧力０．５Ｐａ、ガス流量ＣＦ4５０ｓｃｃｍ、Ｏ2１０ｓｃｃｍとした。 Here, an example of specific numerical values will be described. The thickness of the convex forming film 11 was 2000 mm, and the thickness of the surface irregular film 12 including the convex 12a was 8000 mm, and dry etching was performed using the helicon plasma etching apparatus. Etching conditions were as follows: source RF 250 W, bias 150 W, process pressure 0.5 Pa, gas flow rate CF 4 50 sccm, O 2 10 sccm.

そして、図２に示す状態から図３に示す状態までの処理時間は１３７分３０秒とした。また、図３に示す状態から図４に示す状態までの処理時間は２分３０秒とし、凸部形成用膜１１のエッチング量を１０００Åとした。また、図４に示す柱状突起１２ｃのエッチングは、ＮａＯＨ：Ｈ2Ｏ＝５ｇ：１０００ｇ、Ｐｈ１２．６４（２５．１℃）を用い、処理時間３０分とした、 The processing time from the state shown in FIG. 2 to the state shown in FIG. 3 was 137 minutes 30 seconds. Further, the processing time from the state shown in FIG. 3 to the state shown in FIG. 4 was 2 minutes and 30 seconds, and the etching amount of the projection forming film 11 was 1000 mm. Moreover, the etching of the columnar protrusion 12c shown in FIG. 4 was performed using NaOH: H 2 O = 5 g: 1000 g, Ph12.64 (25.1 ° C.), and a processing time of 30 minutes.

（第２実施形態）
図５はこの発明の第２実施形態としての撥水性構造の一部の断面図を示す。この撥水性構造では、マクスウェル応力によるインク等の流体流動に適用するため、基材１と凸部支持層２との間に電極膜２１が設けられている。この場合、電極膜２１をＩＴＯ等の透明導電材料によって形成し、基材１もガラス等の透明な材料によって形成すると、図５に示す撥水性構造全体を透明とすることができる。 (Second Embodiment)
FIG. 5 shows a partial cross-sectional view of a water-repellent structure as a second embodiment of the present invention. In this water-repellent structure, an electrode film 21 is provided between the substrate 1 and the convex support layer 2 in order to apply to fluid flow of ink or the like due to Maxwell stress. In this case, when the electrode film 21 is formed of a transparent conductive material such as ITO and the base material 1 is also formed of a transparent material such as glass, the entire water-repellent structure shown in FIG. 5 can be made transparent.

（第３実施形態）
図６はこの発明の第３実施形態としての撥水性構造の一部の断面図を示す。マクスウェル応力によるインク等の流体流動では、対向する電極間に電場を印加するが、電池反応を抑えるため、電極を絶縁する必要がある。その際、ＳｉＯ2からなる凸部支持層２のみでは、絶縁性が弱い。そこで、図６に示す撥水性構造では、凸部支持層２と電極膜２１との間に絶縁膜２２が設けられている。この場合、絶縁膜２２をＡｌ2Ｏ3等の透明絶縁材料によって形成し、基材１もガラス等の透明な材料によって形成すると、図６に示す撥水性構造全体を透明とすることができる。Ａｌ2Ｏ3からなる絶縁膜２２の場合には、その膜厚は１０００〜１００００Åである。 (Third embodiment)
FIG. 6 shows a partial cross-sectional view of a water-repellent structure as a third embodiment of the present invention. In fluid flow of ink or the like due to Maxwell stress, an electric field is applied between opposing electrodes, but it is necessary to insulate the electrodes in order to suppress the battery reaction. At that time, the insulating property is weak only with the convex support layer 2 made of SiO 2 . Therefore, in the water-repellent structure shown in FIG. 6, the insulating film 22 is provided between the convex support layer 2 and the electrode film 21. In this case, if the insulating film 22 is formed of a transparent insulating material such as Al 2 O 3 and the substrate 1 is also formed of a transparent material such as glass, the entire water-repellent structure shown in FIG. 6 can be made transparent. In the case of the insulating film 22 made of Al 2 O 3 , the film thickness is 1000 to 10,000 mm.

（その他の実施形態）
撥水膜を形成するための材料は、シラザンオリゴマーに限らず、長鎖アルキルトリエトキシシラン、フルオルアルキルトリメトキシシラン（ＦＡＳ）等であってもよく、特に、臨界表面張力が２０ｄｙｎ／ｃｍ2以下の撥水剤が好ましい。また、撥水膜は、蒸着法によって形成された撥水膜（有機化合物トリアジンの単重合または共重合処理）であってもよい。 (Other embodiments)
The material for forming the water repellent film is not limited to a silazane oligomer, but may be a long-chain alkyltriethoxysilane, fluoroalkyltrimethoxysilane (FAS), or the like, and in particular, the critical surface tension is 20 dyn / cm 2. The following water repellents are preferred. Further, the water repellent film may be a water repellent film (monopolymerization or copolymerization treatment of an organic compound triazine) formed by a vapor deposition method.

この発明の第１実施形態としての撥水性構造の一部の断面図。1 is a partial cross-sectional view of a water-repellent structure as a first embodiment of the present invention. 図１に示す撥水性構造の製造に際し、当初の工程の断面図。FIG. 2 is a cross-sectional view of an initial process in manufacturing the water-repellent structure shown in FIG. 1. 図２に続く工程の断面図。Sectional drawing of the process following FIG. 図３に続く工程の断面図。Sectional drawing of the process following FIG. この発明の第２実施形態としての撥水性構造の一部の断面図。Sectional drawing of a part of water-repellent structure as 2nd Embodiment of this invention. この発明の第３実施形態としての撥水性構造の一部の断面図。Sectional drawing of a part of water-repellent structure as 3rd Embodiment of this invention. （ａ）および（ｂ）は、滑らかな表面および微細な凹凸が形成された表面を有する基材上に搭載された液滴の接触角の変化を説明するための概念図。(A) And (b) is a conceptual diagram for demonstrating the change of the contact angle of the droplet mounted on the base material which has the surface where the smooth surface and the fine unevenness | corrugation were formed.

符号の説明Explanation of symbols

１ 基材
２ 凸部支持層
３ 凸部
４ 撥水膜
１１ 凸部形成用膜
１２ 表面凸凹膜
２１ 電極膜
２２ 絶縁膜 DESCRIPTION OF SYMBOLS 1 Base material 2 Convex part support layer 3 Convex part 4 Water-repellent film 11 Convex part formation film 12 Surface uneven film 21 Electrode film 22 Insulating film

Claims (19)

上面に高さが異なる多数の凸部が一体的に形成された凸部支持層と、前記凸部を含む前記凸部支持層の表面に設けられた撥水膜とを具備することを特徴とする撥水性構造。   A convex support layer integrally formed with a plurality of convex portions having different heights on the upper surface; and a water repellent film provided on the surface of the convex support layer including the convex portions. Water repellent structure. 請求項１に記載の発明において、前記凸部を含む前記凸部支持層および前記撥水膜は透明な材料からなることを特徴とする撥水性構造。   The water repellent structure according to claim 1, wherein the convex support layer including the convex and the water repellent film are made of a transparent material. 請求項１に記載の発明において、前記凸部を含む前記凸部支持層および前記撥水膜は絶縁性材料からなることを特徴とする撥水性構造。   The water repellent structure according to claim 1, wherein the convex support layer including the convex and the water repellent film are made of an insulating material. 請求項１に記載の発明において、前記凸部を含む前記凸部支持層はＳｉＯ２またはＳｉＮからなることを特徴とする撥水性構造。   The water repellent structure according to claim 1, wherein the convex support layer including the convex is made of SiO 2 or SiN. 請求項１に記載の発明において、前記凸部支持層は基材上に設けられていることを特徴とする撥水性構造。   The water repellent structure according to claim 1, wherein the convex support layer is provided on a base material. 請求項５に記載の発明において、前記凸部支持層と前記基材との間に電極膜が設けられていることを特徴とする撥水性構造。   6. The water repellent structure according to claim 5, wherein an electrode film is provided between the convex support layer and the base material. 請求項６に記載の発明において、前記電極膜はＩＴＯからなることを特徴とする撥水性構造。   7. The water repellent structure according to claim 6, wherein the electrode film is made of ITO. 請求項６に記載の発明において、前記凸部支持層と前記電極膜との間に絶縁膜が設けられていることを特徴とする撥水性構造。   The water repellent structure according to claim 6, wherein an insulating film is provided between the convex support layer and the electrode film. 請求項８に記載の発明において、前記絶縁膜はＡｌ2Ｏ3からなることを特徴とする撥水性構造。 9. The water repellent structure according to claim 8, wherein the insulating film is made of Al 2 O 3 . 基材上部に凸部形成用膜を形成し、
前記凸部形成用膜上に、表面に複数の凸凹部を有する表面凸凹膜を形成し、
前記表面凸凹膜の表面を、異方性ドライエッチングにより前記基材に直交する方向にエッチングし、前記表面凸凹膜の凹部に対応した領域を除去して、前記凸部形成用膜を露出させ、
次いで、前記表面凸凹膜の残部および前記凸部形成用膜を、前記異方性ドライエッチングにより同時にエッチングして、前記凸部形成用膜により、前記表面凸凹膜の表面の凸凹形状に応じた形状を有して、多数の凸部を有する凸部支持層を形成し、
前記凸部を含む前記凸部支持層の表面に撥水膜を形成することを特徴とする撥水性構造の製造方法。 Forming a convex forming film on the base material,
On the convex forming film, a surface irregular film having a plurality of convex concaves on the surface is formed,
Etching the surface of the surface uneven film in a direction perpendicular to the substrate by anisotropic dry etching, removing a region corresponding to the recess of the surface uneven film, exposing the protrusion forming film,
Next, the remaining portion of the surface uneven film and the film for forming the convex portion are simultaneously etched by the anisotropic dry etching, and the shape corresponding to the uneven shape of the surface of the surface uneven film is formed by the film for forming the convex portion. And forming a convex support layer having a large number of convex parts,
A method for producing a water-repellent structure, comprising forming a water-repellent film on the surface of the convex support layer including the convex. 請求項１０に記載の発明において、前記凸部を有する前記凸部支持層を形成した後に、前記凸部支持層の前記複数の凸部上の一部に残存する前記表面凸凹膜をエッチングして除去することを特徴とする撥水性構造の製造方法。   In the invention according to claim 10, after forming the convex support layer having the convex portions, the surface uneven film remaining on a part of the plurality of convex portions of the convex support layer is etched. A method for producing a water-repellent structure, comprising removing the water-repellent structure. 請求項１０に記載の発明において、前記凸部形成用膜はＳｉＯ2またはＳｉＮのいずれかからなり、前記基材上への形成は、蒸着法、スパッタ法、ＣＶＤ法のいずれかによる成膜によって行うことを特徴とする撥水性構造の製造方法。 In the invention according to claim 10, the film for forming a convex portion is made of either SiO 2 or SiN, and the formation on the substrate is performed by film formation by any one of an evaporation method, a sputtering method, and a CVD method. A method for producing a water-repellent structure, comprising: 請求項１０に記載の発明において、前記表面凸凹膜はＡｌからなり、前記凸部形成用膜上への形成はスパッタ法によって行うことを特徴とする撥水性構造の製造方法。   11. The method for producing a water-repellent structure according to claim 10, wherein the surface uneven film is made of Al, and the formation on the protrusion forming film is performed by a sputtering method. 請求項１３に記載の発明において、前記表面凸凹膜の膜厚を８０００〜１００００Åとすることを特徴とする撥水性構造の製造方法。   14. The method for producing a water-repellent structure according to claim 13, wherein the thickness of the surface uneven film is 8000 to 10,000 mm. 請求項１０に記載の発明において、前記異方性ドライエッチングは、１Ｐａ以下の真空状態でＣＦ4とＯ2の混合プラズマを発生することができるヘリコン式プラズマエッチング装置を用いて行なうことを特徴とする撥水性構造の製造方法。 The invention according to claim 10, wherein the anisotropic dry etching is performed using a helicon plasma etching apparatus capable of generating a mixed plasma of CF 4 and O 2 in a vacuum state of 1 Pa or less. A method for producing a water-repellent structure. 請求項１０に記載の発明において、前記基材上に電極膜を形成し、前記電極膜上に前記凸部形成用膜を形成することを特徴とする撥水性構造の製造方法。   The method of manufacturing a water-repellent structure according to claim 10, wherein an electrode film is formed on the base material, and the projection forming film is formed on the electrode film. 請求項１６に記載の発明において、前記電極膜膜上に絶縁膜を形成し、前記絶縁膜上に前記凸部形成用膜を形成することを特徴とする撥水性構造の製造方法。   17. The method of manufacturing a water repellent structure according to claim 16, wherein an insulating film is formed on the electrode film, and the projection forming film is formed on the insulating film. 請求項１６及び請求項１７に記載の発明において、前記電極膜はＩＴＯからなることを特徴とする撥水性構造の製造方法。   18. The method for manufacturing a water-repellent structure according to claim 16, wherein the electrode film is made of ITO. 請求項１７に記載の発明において、前記絶縁膜はＡｌ2Ｏ3からなることを特徴とする撥水性構造の製造方法。
18. The method for manufacturing a water-repellent structure according to claim 17, wherein the insulating film is made of Al 2 O 3 .
JP2004069931A 2004-03-12 2004-03-12 Water-repellent structure and its production process Pending JP2005254637A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014051355A1 (en) * 2012-09-27 2014-04-03 한국생산기술연구원 Method for forming fine pattern, and fine pattern formed using same
US8794548B2 (en) 2009-03-05 2014-08-05 Denso Corporation Formation method of water repellent layer and injector having water repellent layer
JP2019005951A (en) * 2017-06-22 2019-01-17 セイコーエプソン株式会社 Nozzle plate, liquid jetting head and liquid jetting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8794548B2 (en) 2009-03-05 2014-08-05 Denso Corporation Formation method of water repellent layer and injector having water repellent layer
WO2014051355A1 (en) * 2012-09-27 2014-04-03 한국생산기술연구원 Method for forming fine pattern, and fine pattern formed using same
US9637815B2 (en) 2012-09-27 2017-05-02 Korea Institute Of Industrial Technology Method for forming fine pattern, and fine pattern formed using same
JP2019005951A (en) * 2017-06-22 2019-01-17 セイコーエプソン株式会社 Nozzle plate, liquid jetting head and liquid jetting device

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