JP2005252089A - Semiconductor fabrication apparatus - Google Patents
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Abstract
Description
本発明は、半導体製造装置に関し、詳しくは、被処理物の表面をプロセスガスで処理する半導体処理装置に関する。 The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor processing apparatus that processes a surface of an object to be processed with a process gas.
従来、例えば図２に示すように、基板５を載置したサセプタ６を搬送機構４で搬送し、処理ガスを吹き付ける処理ヘッド２の下を通過させることにより、エッチングなどを行う半導体製造装置１が提供されている。このような装置において、例えば図３に示すように、基板５のエッチング量が、搬送方向（すなわち、相対移動方向）の前後で減少し、処理が不均一になることがある。 2. Description of the Related Art Conventionally, as shown in FIG. 2, for example, a semiconductor manufacturing apparatus 1 that performs etching or the like by transporting a susceptor 6 on which a substrate 5 is placed by a transport mechanism 4 and passing under a processing head 2 that blows processing gas. Is provided. In such an apparatus, for example, as shown in FIG. 3, the etching amount of the substrate 5 may decrease before and after the transport direction (that is, the relative movement direction), and the processing may become uneven.
特許文献１には、多数の基板が配列された加熱板の上を、反応ガスを供給するノズルが移動するＣＶＤ（化学気相成長）装置において、加熱板に凹部を形成し、基板を埋没して支持することにより、堆積膜厚の面内均一性を向上することが、提案されている。 In Patent Document 1, a CVD (Chemical Vapor Deposition) apparatus in which a nozzle for supplying a reactive gas moves on a heating plate on which a large number of substrates are arranged, forms a recess in the heating plate, and embeds the substrate. It has been proposed to improve the in-plane uniformity of the deposited film thickness.
特許文献２には、常圧ＣＶＤ装置において、反応ガスを吹き付けるヘッドの他に、冷却ガスを吹き付けるヘッドを設けることにより、ウエハの温度を一定にし、厚み方向の膜質が均一な薄膜を形成することが、提案されている。 In Patent Document 2, in the atmospheric pressure CVD apparatus, a head for blowing a cooling gas is provided in addition to a head for blowing a reactive gas, thereby forming a thin film having a uniform wafer quality and a uniform film quality in the thickness direction. Has been proposed.
特許文献３には、ＣＶＤ装置において、サセプタに収納された基板の温度と、サセプタの基板以外の部分の表面温度とを同一に保つことにより、基板の中心部分と周辺部分とで雰囲気ガスの濃度差が生じないようにして、均一なＣＶＤ層を形成することが、提案されている。
本発明は、かかる実情に鑑み、被処理物を相対移動方向に均一に処理することができる半導体製造装置を提供しようとするものである。 In view of such circumstances, the present invention intends to provide a semiconductor manufacturing apparatus capable of uniformly processing an object to be processed in a relative movement direction.
本発明は、上記課題を解決するため、以下のように構成した半導体製造装置を提供する。 In order to solve the above-described problems, the present invention provides a semiconductor manufacturing apparatus configured as follows.
半導体処理装置は、被処理物が載置された保持板と処理ヘッドとが相対的に移動し、相対移動中に上記保持板と上記処理ヘッドとが対向し、上記処理ヘッドは対向する上記保持板に向けてプロセスガスを吹き付けるタイプのものである。半導体処理装置は、上記保持板の相対移動方向一方側であって上記処理ヘッドとの対向を開始する側に隙間なく配置された前板、又は上記保持板の相対移動方向他方側であって上記処理ヘッドとの対向を終了する側に隙間なく配置された後板の少なくとも一方を備える。上記保持板と上記前板又は上記後板の少なくとも一方とは、上記処理ヘッドに対向する側のそれぞれの面が同一面となる。 In the semiconductor processing apparatus, the holding plate on which an object to be processed is placed and the processing head relatively move, the holding plate and the processing head face each other during the relative movement, and the processing head faces the holding. This is a type in which process gas is blown toward the plate. The semiconductor processing apparatus is a front plate arranged without a gap on one side in the relative movement direction of the holding plate and starting to face the processing head, or the other side in the relative movement direction of the holding plate. At least one of the rear plates arranged without a gap is provided on the side where the facing of the processing head is finished. The holding plate and at least one of the front plate and the rear plate have the same surface on the side facing the processing head.
上記構成によれば、保持板と前板と後板とは、処理ヘッドに対向する側のそれぞれの面が同一面となるので、処理ヘッドが前板、保持板、後板と順に対向する間、処理ヘッドから吹き付けたプロセスガスの流れの状態を略一定に保つことができる。保持板に載置された被処理物は、この略一定状態のプロセスガスの流れの中を通過するので、相対移動方向のどの部分も、プロセスガスの流れを受けた履歴が等しくなる。したがって、被処理物を相対移動方向に均一に処理することができる。特に、中圧から大気圧近傍下での処理において効果的である。ここで言う、中圧から大気圧近傍下の圧力とは、例えば１．０１３×１０４〜５０．６６３×１０４Ｐａの範囲を言い、圧力調整の容易化や装置構成の簡略化を考慮すると、１．３３３×１０４〜１０．６６４×１０４Ｐａが好ましく、９．３３１×１０４〜１０．３９７×１０４Ｐａがより好ましい。 According to the above configuration, since the holding plate, the front plate, and the rear plate have the same surface facing the processing head, the processing head is opposed to the front plate, the holding plate, and the rear plate in this order. The flow state of the process gas sprayed from the processing head can be kept substantially constant. Since the workpiece placed on the holding plate passes through the flow of the process gas in a substantially constant state, the history of receiving the flow of the process gas is equal in any part in the relative movement direction. Therefore, the workpiece can be processed uniformly in the relative movement direction. In particular, it is effective in the treatment under intermediate pressure to near atmospheric pressure. Here, the pressure from the intermediate pressure to the vicinity of the atmospheric pressure means, for example, a range of 1.013 × 10 4 to 50.663 × 10 4 Pa, and considering the ease of pressure adjustment and the simplification of the apparatus configuration. 1.333 × 10 4 to 10.664 × 10 4 Pa are preferable, and 9.331 × 10 4 to 10.9797 × 10 4 Pa are more preferable.
なお、保持板は複数備えるようにしてもよい。この場合には、複数の保持板は、相対移動方向に隙間なく配置される。 A plurality of holding plates may be provided. In this case, the plurality of holding plates are arranged without gaps in the relative movement direction.
好ましくは、上記前板又は上記後板の少なくとも一方の相対移動方向の寸法は、上記処理ヘッドの相対移動方向の寸法よりも大きい。 Preferably, the relative movement direction dimension of at least one of the front plate and the rear plate is larger than the dimension of the processing head in the relative movement direction.
前板の相対移動方向の寸法が、処理ヘッドの相対方向の寸法よりも大きい場合、前板が処理ヘッドに完全に対向した後に、保持板は処理ヘッドに対向する。前板が処理ヘッドに完全に対向した後には、プロセスガスの流れの状態は略一定になるので、保持板に載置された被処理物の少なくとも対向開始側部分は、その略一定状態のプロセスガスの流れの中を通過する。 When the dimension of the front plate in the relative movement direction is larger than the dimension of the processing head in the relative direction, the holding plate faces the processing head after the front plate completely faces the processing head. After the front plate completely faces the processing head, the flow state of the process gas becomes substantially constant. Therefore, at least the facing start side portion of the workpiece placed on the holding plate is in the substantially constant state process. Pass through the gas flow.
また、後板の相対移動方向の寸法が、処理ヘッドの相対移動方向の寸法よりも大きい場合、後板が処理ヘッドに完全に対向する前に、保持板は処理ヘッドを通過してしまう。後板が処理ヘッドに完全に対向するまでは、プロセスガスの流れの状態は略一定であるので、保持板に載置された被処理物の少なくとも対向終了側部分は、その略一定状態のプロセスガスの流れ中を通過する。 Further, when the size of the rear plate in the relative movement direction is larger than the size of the processing head in the relative movement direction, the holding plate passes through the processing head before the rear plate completely faces the processing head. Until the rear plate completely faces the processing head, the flow state of the process gas is substantially constant. Therefore, at least the facing end side portion of the workpiece placed on the holding plate is in the process in the substantially constant state. Passes through the gas flow.
したがって、被処理物を相対移動方向に均一に処理することができる。 Therefore, the workpiece can be processed uniformly in the relative movement direction.
ところで、処理ヘッドに、プロセスガスを吹き出す吹き出し口と、プロセスガスを吸い込む吸い込み口とを設けた場合、プロセスガスは、吹き出し口から吸い込み口まで、処理ヘッドに沿って流れる。吸い込み口がなく、吹き出し口だけの場合には、プロセスガスは、処理ヘッドに沿って処理ヘッドの周囲へと流れる。 By the way, when the process head is provided with a blow-out port for blowing out process gas and a suction port for sucking in process gas, the process gas flows along the process head from the blow-out port to the suction port. If there is no suction port and only a blow-out port, the process gas flows along the processing head to the periphery of the processing head.
厳密には、前板及び後板の相対移動方向の寸法は、処理ヘッドに沿ってプロセスガスが流れる領域の相対移動方向の寸法よりも大きければよい。 Strictly speaking, the size of the front plate and the rear plate in the relative movement direction may be larger than the size of the region in which the process gas flows along the processing head in the relative movement direction.
この条件を満たせば、処理ヘッドに前板が対向した後、後板が対向するまでの間、プロセスガスの流れを略一定状態に保ち、被処理物を均一に処理することができる。処理ヘッドに沿ってプロセスガスが流れる領域の相対移動方向の寸法が、処理ヘッドの相対移動方向の寸法よりも小さいときには、前板及び後板を、より小さくすることが可能である。 If this condition is satisfied, the flow of the process gas can be kept substantially constant until the rear plate faces after the front plate faces the processing head, and the object to be processed can be processed uniformly. When the dimension in the relative movement direction of the region where the process gas flows along the processing head is smaller than the dimension in the relative movement direction of the processing head, the front plate and the rear plate can be made smaller.
好ましくは、上記前板又は上記後板の少なくとも一方は、上記保持板に載置された上記被処理物と略同等の材質である。 Preferably, at least one of the front plate or the rear plate is made of a material that is substantially equivalent to the object to be processed placed on the holding plate.
上記構成によれば、被処理物が処理ヘッドを通過する間、プロセスガスの状態（プロセスガスの成分濃度や流れ方、温度や流速など）を一定に保つことができる。これにより、被処理物の相対移動方向の処理を、より均一にすることができる。 According to the above configuration, the state of the process gas (the component concentration and flow of the process gas, the temperature and the flow rate, etc.) can be kept constant while the workpiece passes through the processing head. Thereby, the process of the relative movement direction of a to-be-processed object can be made more uniform.
好ましくは、上記処理ヘッドは、プラズマ化された上記プロセスガスを吹き付ける。 Preferably, the processing head sprays the plasma-processed process gas.
プラズマ化されたプロセスガスは、被処理物に対する流れの影響が大きく、わずかな差によっても、被処理物の処理状態が大きく変化する。上記各構成は、プロセスガスの状態を一定に保つことができるので、プラズマ化された上記プロセスガスを吹き付ける場合に、特に好適である。 The process gas that has been converted to plasma has a great influence of the flow on the object to be processed, and the processing state of the object to be processed changes greatly even with a slight difference. Each of the above-described configurations is particularly suitable for spraying the plasma-processed process gas because the state of the process gas can be kept constant.
本発明の半導体製造装置は、被処理物を相対移動方向に均一に処理することができる。 The semiconductor manufacturing apparatus of the present invention can uniformly process an object to be processed in the relative movement direction.
以下、本発明の実施の形態について、図１を参照して説明する。 Hereinafter, an embodiment of the present invention will be described with reference to FIG.
半導体製造装置１０は、処理ヘッド１２と、被搬送物２０を搬送する搬送機構１４とを備える。 The semiconductor manufacturing apparatus 10 includes a processing head 12 and a transport mechanism 14 that transports the transported object 20.
搬送機構１４は、矢印１８で示すように被搬送物２０を搬送する。被搬送物２０は、搬送経路の途中において、処理ヘッド１２と対向するようになっている。処理ヘッド１２は互いに平行となるように配置した電極対を備え、電極対間いわゆる放電空間に送られたプロセスガスをプラズマ化（励起、活性化）し、対向した被搬送物２０に向けてプロセスガスを吹き付けるようになっている。搬送機構１４は、ベルトコンベアやスライドテーブルなどのように、処理ヘッド１２が被搬送物２０に対向しないときにプロセスガスが通り抜けないものであっても、ローラコンベアやチェーンコンベアなどのように、プロセスガスが通り抜けるものであってもよい。 The transport mechanism 14 transports the transported object 20 as indicated by an arrow 18. The transported object 20 is opposed to the processing head 12 in the middle of the transport path. The processing head 12 includes electrode pairs arranged so as to be parallel to each other. The process gas sent to a so-called discharge space between the electrode pairs is turned into plasma (excited, activated) and processed toward the object to be conveyed 20 facing the process head 12. Gas is blown. Even if the process gas does not pass through when the processing head 12 does not face the object to be transported 20 such as a belt conveyor or a slide table, the transport mechanism 14 does not pass through the process like a roller conveyor or a chain conveyor. Gas may pass through.
被搬送物２０は、被処理物１５を載置する保持板２２と、保持板２２の搬送方向前後に隙間なく配置される前板２４および後板２６とを含む。保持板２２、前板２４および後板２６は、処理ヘッド１２に対向する側のそれぞれの面が同一面となる。必要ならば、保持板２２に、ホットプレートなどの温度調節器２３を設け、被処理物１５の温度を制御するようにしてもよい。 The object to be conveyed 20 includes a holding plate 22 on which the object to be processed 15 is placed, and a front plate 24 and a rear plate 26 that are arranged without a gap before and after the holding plate 22 in the conveying direction. The holding plate 22, the front plate 24, and the rear plate 26 have the same surface on the side facing the processing head 12. If necessary, the holding plate 22 may be provided with a temperature controller 23 such as a hot plate to control the temperature of the workpiece 15.
なお、保持板２２は複数個であってもよい。その場合、前板２４は、最も搬送方向前側の保持板の搬送方向前側に配置する。後板２６は、最も搬送方向後側の保持板の搬送方向後側に配置する。複数の保持板２２と前板及２４び後板２６とは、処理ヘッド１２に対向する側のそれぞれの面が同一面となり、互いに隙間がないように搬送機構１４に配置する。 A plurality of holding plates 22 may be provided. In that case, the front plate 24 is disposed on the front side in the transport direction of the holding plate on the front side in the transport direction. The rear plate 26 is disposed on the rear side in the transport direction of the holding plate on the rearmost side in the transport direction. The plurality of holding plates 22 and the front plate 24 and the rear plate 26 are arranged on the transport mechanism 14 so that the surfaces facing the processing head 12 are the same surface and there is no gap between them.
次に、半導体製造装置１０の動作について、説明する。 Next, the operation of the semiconductor manufacturing apparatus 10 will be described.
被搬送物２０は、搬送機構１４により、例えば一方向に搬送されて、処理ヘッド１２の下を通過する。被搬送物２０が処理ヘッド１２に対向すると、処理ヘッド１２から吹き出すプロセスガスは、処理ヘッド１２に沿って流れる。すなわち、処理ヘッド１２と被搬送物２０との間の空間を流れる。搬送に伴い、保持板２２に載置された被処理物１５に沿ってプロセスガスが流れ、被処理物１５の表面がプロセスガスにより処理される。 The transported object 20 is transported, for example, in one direction by the transport mechanism 14 and passes under the processing head 12. When the transported object 20 faces the processing head 12, the process gas blown from the processing head 12 flows along the processing head 12. That is, it flows through the space between the processing head 12 and the conveyed object 20. Along with the conveyance, the process gas flows along the workpiece 15 placed on the holding plate 22, and the surface of the workpiece 15 is treated with the process gas.
例えば、前板２４の搬送方向の寸法（長さ）２１を、処理ヘッド１２の搬送方向の寸法（長さ）１３よりも大きくしておけば、前板２４が処理ヘッド１２に完全に対向したときに、処理ヘッド１２と前板２４との間のプロセスガスの流れが一定となる。前板２４と保持板２２とが隙間なく同一面となっているので、この一定状態のプロセスガスの流れは、保持板２２が処理ヘッド１２の下を通過する少なくとも前半の過程において、保たれる。したがって、被処理物１５の前側部分１６の処理を均一にすることができる。 For example, if the dimension (length) 21 in the transport direction of the front plate 24 is set larger than the dimension (length) 13 in the transport direction of the processing head 12, the front plate 24 completely faces the processing head 12. Sometimes, the process gas flow between the processing head 12 and the front plate 24 becomes constant. Since the front plate 24 and the holding plate 22 are flush with each other, this constant process gas flow is maintained at least in the first half of the process when the holding plate 22 passes under the processing head 12. . Therefore, the processing of the front side portion 16 of the workpiece 15 can be made uniform.
同様に、後板２６の搬送方向の長さを、処理ヘッド１２の搬送方向の長さ１３よりも大きくしておけば、保持板２２が処理ヘッド１２の下を完全に通過するまでの後半の過程において、プロセスガスの流れは、後板２６によって一定に保たれる。したがって、被処理物１５の後側部分１７の処理を均一にすることができる。 Similarly, if the length of the rear plate 26 in the transport direction is set to be longer than the length 13 of the processing head 12 in the transport direction, the latter half until the holding plate 22 completely passes under the processing head 12. In the process, the flow of process gas is kept constant by the back plate 26. Therefore, the processing of the rear portion 17 of the workpiece 15 can be made uniform.
つまり、前板２４及び後板２６の搬送方向の寸法を処理ヘッド１２の搬送方向の寸法よりも大きくすれば、被処理物１５を搬送方向に均一に処理することができる。 That is, if the dimension of the front plate 24 and the rear plate 26 in the transport direction is made larger than the dimension of the processing head 12 in the transport direction, the workpiece 15 can be processed uniformly in the transport direction.
ところで、処理ヘッド１２は種々の構成とすることができ、処理ヘッド１２が被搬送物２０に対向する面（対向面）に、被搬送物２０に吹き付けるプロセスガスを吹き出す１又は２以上の吹き出し口のみを設ける構成に限らない。例えば、処理ヘッド１２の対向面に、吹き出し口のほかに、吹き出し口から吹き出したプロセスガスを吸い込む吸い込み口を設ける構成としてもよい。この構成においては、プロセスガスの流れは、吸い込み口によって、処理ヘッドの対向面の長さよりも小さくすることが可能である。被処理物を搬送方向に均一に処理するためには、被処理物１５に沿ってプロセスガスが流れる間、プロセスガスの状態を一定すればよい。 By the way, the processing head 12 can have various configurations, and one or two or more outlets for blowing the process gas sprayed on the transported object 20 to the surface (opposing surface) of the processing head 12 facing the transported object 20. It is not restricted to the structure which provides only. For example, in addition to the blowout port, a suction port for sucking in the process gas blown out from the blowout port may be provided on the opposite surface of the processing head 12. In this configuration, the flow of the process gas can be made smaller than the length of the opposing surface of the processing head by the suction port. In order to process the object to be processed uniformly in the transport direction, the state of the process gas may be constant while the process gas flows along the object to be processed 15.
したがって、前板２４および後板２６の搬送方向の寸法は、少なくとも、処理ヘッド１２に沿ってプロセスガスが流れる領域の搬送方向の寸法よりも大きければ、被処理物１５を搬送方向に均一に処理することができる。 Therefore, if the dimension of the front plate 24 and the rear plate 26 in the transport direction is at least larger than the dimension in the transport direction of the region where the process gas flows along the processing head 12, the workpiece 15 is processed uniformly in the transport direction. can do.
前板２４及び後板２６（特に、前板２４）は、被処理物１５と略同等の材料であることが好ましい。例えば、前板２４や後板２６がプロセスガスと反応し、プロセスガスの成分濃度や温度などが変化すると、被処理物１５の処理が不均一となる。したがって、前板２４と後板２６とは、プロセスガスに対する反応特性が、被処理物１５のプロセスガスに対する反応特性と略同等であることが、好ましい。 The front plate 24 and the rear plate 26 (particularly, the front plate 24) are preferably made of substantially the same material as the workpiece 15. For example, when the front plate 24 or the rear plate 26 reacts with the process gas and the component concentration or temperature of the process gas changes, the processing of the workpiece 15 becomes non-uniform. Therefore, it is preferable that the reaction characteristics of the front plate 24 and the rear plate 26 are substantially equal to the reaction characteristics of the workpiece 15 with respect to the process gas.
次に、実施例及び比較例について説明する。 Next, examples and comparative examples will be described.
（実施例）
被処理物１５として、α−Ｓｉ膜が形成された基板を、コロを用いた搬送機構１４により、１８００ｍｍ／ｍｉｎの速度で搬送し、エッチングする。
(Example)
The substrate on which the α-Si film is formed as the object to be processed 15 is transported and etched at a speed of 1800 mm / min by the transport mechanism 14 using a roller.
処理ヘッド１２は、パルス電圧の印加によりグロー放電が起きた電極対の間にプロセスガスを流し、プラズマ化（励起・活性化）されたプロセスガスを吹き付ける。プロセスガスには、ＣＦ４を０．６Ｌ／ｍｉｍ（リットル／分）、Ｏ２を２．４Ｌ／ｍｉｎで用いる。雰囲気は大気圧である。処理ヘッド１２に前板２４が対向したときから、電極対にパルス電圧を印加し、放電する。 The processing head 12 causes a process gas to flow between a pair of electrodes in which glow discharge has occurred due to the application of a pulse voltage, and sprays the process gas that has been turned into plasma (excited / activated). As the process gas, CF 4 is used at 0.6 L / min (liter / minute), and O 2 is used at 2.4 L / min. The atmosphere is atmospheric pressure. When the front plate 24 faces the processing head 12, a pulse voltage is applied to the electrode pair to discharge.
処理後、被処理物１５の３５０ｍｍ×４５０ｍｍの処理領域について処理量（エッチングの深さ）を測定し、次式（１）により、平均処理量に対するばらつきの程度を示す「処理均一性（±＿％）」を算出する。
処理均一性＝｛（最大処理量−最小処理量）／平均処理量）｝×（１／２）×１００・・・（１）
After the processing, the processing amount (etching depth) is measured for a processing area of 350 mm × 450 mm of the workpiece 15, and “processing uniformity (± _) indicating the degree of variation with respect to the average processing amount is expressed by the following equation (1). %) ".
Processing uniformity = {(maximum processing amount−minimum processing amount) / average processing amount)} × (1/2) × 100 (1)
（比較例１）
予備放電時間を６０ｓとした以外は、実施例と同じである。
(Comparative Example 1)
The same as the embodiment except that the preliminary discharge time was set to 60 s.
（比較例２）
前板２４及び後板２６にステンレス板を用いた以外は、実施例と同じである。
(Comparative Example 2)
Except for using stainless steel plates for the front plate 24 and the rear plate 26, the same as the embodiment.
（比較例３）
前板２４及び後板２６を配置しない点以外は、実施例と同じである。
(Comparative Example 3)
The present embodiment is the same as the embodiment except that the front plate 24 and the rear plate 26 are not arranged.
以上の試験結果をまとめると、次の表１のようになる。
表１から、前板２４及び後板２６を用いると、被処理物１５の処理の均一性が向上することが分かる。また、前板２４及び後板２６は、被処理物１５と同等の材質であることが好ましいことが分かる。さらに、プロセスガスの状態は、被処理物１５を処理する前に、被処理物１５を処理するときと同じ状態にしておくと、均一な処理となることが分かる。 From Table 1, it can be seen that when the front plate 24 and the rear plate 26 are used, the processing uniformity of the workpiece 15 is improved. It can also be seen that the front plate 24 and the rear plate 26 are preferably made of the same material as the workpiece 15. Further, it can be seen that if the state of the process gas is the same as when the object 15 is processed before the object 15 is processed, the process gas becomes uniform.
なお、本発明は、上記実施形態に限定されるものではなく、その他種々の態様で実施可能である。 In addition, this invention is not limited to the said embodiment, It can implement in another various aspect.
例えば、被搬送物１５の搬送は、往復してもよい。処理ヘッド１２は、プラズマに限らず、オゾンアッシャーにおけるオゾン吹き出し口、熱ＣＶＤにおけるプロセスガス吹き出し口（例えばディスパージョンヘッド）などであってもよい。 For example, the transport of the transported object 15 may reciprocate. The processing head 12 is not limited to plasma, but may be an ozone outlet in an ozone asher, a process gas outlet (for example, a dispersion head) in thermal CVD, or the like.
前板２４及び後板２６は、保持板２２と同一寸法であると取り扱いが容易となるが、異なる寸法であってもよい。保持板２２、前板２４及び後板２６は、別個独立の部品に限定されず、一部品として一体に構成してもよい。すなわち、搬送方向前後に延長し、中央部分に保持板２２として被処理物１５を載置し、搬送方向前後に延長した部分が前板２４及び後板２６として機能するようにしてもよい。また、搬送機構１４（搬送手段）に、前板２４及び後板２６として機能する部分を予め設けておき、この前板２４及び後板２６として機能する部分の間に、保持板２２を着脱するようにしてもよい。さらには、保持板２２として機能する部分も搬送機構１４（搬送手段）に予め設け、被処理物１５を着脱するようにしてもよい。 The front plate 24 and the rear plate 26 are easy to handle if they have the same dimensions as the holding plate 22, but may have different dimensions. The holding plate 22, the front plate 24, and the rear plate 26 are not limited to separate and independent components, and may be integrally formed as one component. In other words, the workpiece 15 may be extended as front and rear in the transport direction, the workpiece 15 may be placed as the holding plate 22 in the central portion, and the portions extended in the front and rear in the transport direction may function as the front plate 24 and the rear plate 26. Further, a portion that functions as the front plate 24 and the rear plate 26 is provided in advance in the transport mechanism 14 (transport means), and the holding plate 22 is attached and detached between the portions that function as the front plate 24 and the rear plate 26. You may do it. Furthermore, a part that functions as the holding plate 22 may be provided in advance in the transport mechanism 14 (transport means), and the workpiece 15 may be attached and detached.
また、処理ヘッドと、保持板、前板及び後板とは、相対的に移動すればよい。したがって、処理ヘッドを移動し、保持板、前板及び後板を固定するようにしても、処理ヘッドも、保持板、前板及び後板も移動するようにしてもよい。 Further, the processing head, the holding plate, the front plate, and the rear plate may be relatively moved. Therefore, the processing head may be moved to fix the holding plate, the front plate, and the rear plate, or the processing head, the holding plate, the front plate, and the rear plate may be moved.
本発明の半導体製造装置は、被処理物の表面処理全般に用いることができ、例えば、ＣＶＤ、表面改質、アッシング、洗浄などに適用可能である。 The semiconductor manufacturing apparatus of the present invention can be used for the entire surface treatment of an object to be processed, and can be applied to, for example, CVD, surface modification, ashing, and cleaning.
１０ 半導体製造装置
１２ 処理ヘッド
１４ 搬送機構
１５ 被処理物
２２ 保持板
２４ 前板
２６ 後板
DESCRIPTION OF SYMBOLS 10 Semiconductor manufacturing apparatus 12 Processing head 14 Conveyance mechanism 15 To-be-processed object 22 Holding plate 24 Front plate 26 Rear plate
Claims (3)
上記保持板の相対移動方向一方側であって上記処理ヘッドとの対向を開始する側に隙間なく配置された前板、又は上記保持板の相対移動方向他方側であって上記処理ヘッドとの対向を終了する側に隙間なく配置された後板の少なくとも一方を備え、
上記保持板と上記前板又は上記後板の少なくとも一方とは、上記処理ヘッドに対向する側のそれぞれの面が同一面となることを特徴とする、半導体製造装置。 The holding plate on which the object to be processed is placed and the processing head relatively move, the holding plate and the processing head face each other during the relative movement, and the processing head faces the holding plate facing the process. In semiconductor processing equipment that blows gas,
The front plate disposed on the one side of the holding plate in the relative movement direction and starting to face the processing head without any gap, or the other side of the holding plate in the relative movement direction and facing the processing head. Comprising at least one of the rear plates arranged without gaps on the side to finish,
The semiconductor manufacturing apparatus, wherein the holding plate and at least one of the front plate and the rear plate have the same surface facing the processing head.
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| KR20140017100A (en) * | 2012-07-30 | 2014-02-11 | 주식회사 원익아이피에스 | Shuttle and substrate processing apparatus having the same |
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