JP2005244128A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
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- JP2005244128A JP2005244128A JP2004055421A JP2004055421A JP2005244128A JP 2005244128 A JP2005244128 A JP 2005244128A JP 2004055421 A JP2004055421 A JP 2004055421A JP 2004055421 A JP2004055421 A JP 2004055421A JP 2005244128 A JP2005244128 A JP 2005244128A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 221
- 239000001301 oxygen Substances 0.000 claims abstract description 63
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 63
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052718 tin Inorganic materials 0.000 claims abstract description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011777 magnesium Substances 0.000 claims abstract description 18
- 229910052738 indium Inorganic materials 0.000 claims abstract description 12
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 9
- 239000011701 zinc Substances 0.000 claims abstract description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000004767 nitrides Chemical group 0.000 claims description 29
- 239000011573 trace mineral Substances 0.000 claims description 22
- 235000013619 trace mineral Nutrition 0.000 claims description 22
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 253
- 239000010410 layer Substances 0.000 description 239
- 229910002601 GaN Inorganic materials 0.000 description 48
- 238000000034 method Methods 0.000 description 37
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- 238000004544 sputter deposition Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 19
- 239000000758 substrate Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000010948 rhodium Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910001882 dioxygen Inorganic materials 0.000 description 8
- 229910006404 SnO 2 Inorganic materials 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
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- 238000001771 vacuum deposition Methods 0.000 description 6
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- 239000010980 sapphire Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- -1 ITO Substances 0.000 description 3
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- 230000008859 change Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
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- 238000009826 distribution Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
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- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
【解決手段】半導体発光素子は、第1の元素Aを含む半導体層が表面にある半導体積層構造をもつ。この半導体発光素子は表面に、少なくとも亜鉛、インジウム、スズ及びマグネシウムよりなる群から選択された少なくとも一種の元素Cを含む酸化物よりなる導電性酸化物膜と、第2の元素Bを含む酸化物膜とを有し、導電性酸化物膜は、第2の元素Bを含む酸化物膜との界面近傍における膜中酸素濃度が、導電性酸化物膜の他の部分の膜中酸素濃度よりも高い。
【選択図】図1
Description
<半導体層の形成>
<エッチング>
<ITO膜の形成>
<パッド電極の形成>
<ITO膜の形成>
2 n型半導体層
3 活性層
4 p型半導体層
5 透光性電極
5a 領域
5b 領域
6 パッド電極
7 n電極
8 絶縁性酸化物膜
10 半導体発光素子
Claims (12)
- 第1の元素Aを含む半導体層が表面に位置する半導体積層構造を備える半導体発光素子であって、
前記半導体層の表面に、少なくとも亜鉛、インジウム、スズ及びマグネシウムよりなる群から選択された少なくとも一種の元素Cを含む酸化物よりなる導電性酸化物膜と、第2の元素Bを含む酸化物膜とを有し、
前記導電性酸化物膜は、第2の元素Bを含む酸化物膜との界面近傍における膜中酸素濃度が、前記導電性酸化物膜の他の部分の膜中酸素濃度よりも高くしてなることを特徴とする半導体発光素子。 - 請求項1に記載の半導体発光素子であって、前記第2の元素Bを含む酸化物膜は、絶縁性酸化物膜であることを特徴とする半導体発光素子。
- 請求項1又は2に記載の半導体発光素子であって、前記第2の元素Bは、電気陰性度を示すPauling値が前記元素Cよりも大きいことを特徴とする半導体発光素子。
- 請求項1から3のいずれかに記載の半導体発光素子であって、前記第2の元素Bは、電気陰性度を示すPauling値が前記第1の元素Aよりも大きいことを特徴とする半導体発光素子。
- 請求項1から4のいずれかに記載の半導体発光素子であって、前記第1の元素Aは、ガリウムであることを特徴とする半導体発光素子。
- 請求項1から5のいずれかに記載の半導体発光素子であって、前記半導体層は、ガリウムを含む窒化物半導体層であることを特徴とする半導体発光素子。
- 請求項1から6のいずれかに記載の半導体発光素子であって、前記導電性酸化物膜は元素Cに加えて、微量元素Dを含むことを特徴とする半導体発光素子。
- 請求項7に記載の半導体発光素子であって、前記微量元素Dは、スズ、亜鉛、ガリウム、アルミニウムから選択される少なくとも1種の元素であることを特徴とする半導体発光素子。
- 請求項8に記載の半導体発光素子であって、前記導電性酸化物膜は、前記半導体層との界面近傍における前記微量元素Dが、前記導電性酸化物膜の他の部分の膜中微量元素Dの濃度よりも高いことを特徴とする半導体発光素子。
- 請求項1から9のいずれかに記載の半導体発光素子であって、前記導電性酸化物膜はITOであることを特徴とする半導体発光素子。
- 請求項1から10のいずれかに記載の半導体発光素子であって、前記第2の元素Bは、ケイ素又はスズのいずれかであることを特徴とする半導体発光素子。
- 請求項1から11のいずれかに記載の半導体発光素子であって、前記導電性酸化物膜の膜中酸素濃度が、第2の元素Bを含む酸化物膜との界面から前記半導体層との界面に向かって徐々に低下することを特徴とする半導体発光素子。
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JP2005244128A true JP2005244128A (ja) | 2005-09-08 |
JP2005244128A5 JP2005244128A5 (ja) | 2007-04-12 |
JP4543700B2 JP4543700B2 (ja) | 2010-09-15 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007069651A1 (ja) * | 2005-12-14 | 2007-06-21 | Showa Denko K.K. | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
JP2007165611A (ja) * | 2005-12-14 | 2007-06-28 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
JP2007165612A (ja) * | 2005-12-14 | 2007-06-28 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
WO2007108531A1 (ja) * | 2006-03-23 | 2007-09-27 | Showa Denko K.K. | 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体発光素子及びそれを用いたランプ |
WO2007125860A1 (ja) * | 2006-04-24 | 2007-11-08 | Showa Denko K.K. | 窒化ガリウム系化合物半導体発光素子の製造方法及び窒化ガリウム系化合物半導体発光素子、並びにランプ |
WO2009001596A1 (ja) * | 2007-06-28 | 2008-12-31 | Kyocera Corporation | 発光素子及び照明装置 |
JP2009510738A (ja) * | 2005-09-27 | 2009-03-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 電流拡大層を有するオプトエレクトロニクス半導体構造素子 |
WO2009142246A1 (ja) * | 2008-05-20 | 2009-11-26 | 昭和電工株式会社 | 半導体発光素子及びその製造方法、ランプ |
WO2010073883A1 (ja) * | 2008-12-25 | 2010-07-01 | 株式会社 東芝 | 半導体発光素子 |
KR20190014127A (ko) * | 2009-10-16 | 2019-02-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
JP2019207925A (ja) * | 2018-05-29 | 2019-12-05 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10173222A (ja) * | 1996-12-06 | 1998-06-26 | Rohm Co Ltd | 半導体発光素子の製法 |
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