JP2005193390A - Mold and its manufacturing method - Google Patents
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- JP2005193390A JP2005193390A JP2003434965A JP2003434965A JP2005193390A JP 2005193390 A JP2005193390 A JP 2005193390A JP 2003434965 A JP2003434965 A JP 2003434965A JP 2003434965 A JP2003434965 A JP 2003434965A JP 2005193390 A JP2005193390 A JP 2005193390A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000465 moulding Methods 0.000 claims abstract description 63
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 27
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 23
- 239000011651 chromium Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 16
- 238000001746 injection moulding Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 5
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- 239000010703 silicon Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000001962 electrophoresis Methods 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
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- 238000007493 shaping process Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 102000053602 DNA Human genes 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 108020004682 Single-Stranded DNA Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 239000011159 matrix material Substances 0.000 description 1
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- 239000002557 mineral fiber Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 102200082816 rs34868397 Human genes 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
Description
本発明は金型に関し、特に、表面の少なくとも一部にＤＬＣ被膜が形成された金型及びその製造方法に関するものである。 The present invention relates to a mold, and more particularly, to a mold having a DLC film formed on at least a part of its surface and a method for manufacturing the same.
近年、樹脂成形品の強度、摩耗性等を上げるために、樹脂にガラス、カーボン鉱物繊維等、硬い補強剤を添加して射出成形することが行われている。従って、金型の耐摩耗寿命を向上させるために金型の材質、コーティング等による金型の表面の耐摩耗性向上が要求されるようになっている。そこで、特許文献１には、ＤＬＣ(ダイヤモンドライクカーボン)被膜が表面に形成された射出成形用の金型が開示されている。この金型においては、プラズマＣＶＤ法により高硬度のＤＬＣ被膜を金属製の金型基材のうち型表面に対応する部分に形成しているため、金型の表面の耐摩耗性を向上して耐久性を高め、金型の成形可能回数を格段に延ばすことできる。また、ＤＬＣ被膜は、摩擦係数が約０.１と非常に低いため、金型から被成形品を容易に取り外すことができ、被成形品の破損を防止し、生産効率を高めることもできる。
しかし、近年、バイオ関連や光学関連などの分野において精度の高い微細な成形加工の要望が増え、それに伴って微細な成形加工が可能な金型が求められているが、特許文献１の技術では、金型基材の型表面に対応する部分にＤＬＣ被膜をプラズマＣＶＤ法により形成するだけなので、この金型により精度の高い微細な成形をすることができない。つまり、金型の型表面が平坦な部分においては膜厚が略均一なＤＬＣ被膜を形成することができるので問題ないが、被成型品の表面に凹凸を形成するためには、所望の成形形状に合わせて金属製の金型基材に凹凸を形成した後、ＤＬＣ被膜を成膜して型表面を形成しなければならないが、金属製の金型基材の表面に微細な凹凸を正確に形成することは非常に困難である。更に、この微細な凹凸部分にＤＬＣ被膜を成膜すると、金型基材に形成された凹凸の影になる部分と、それ以外の部分ではプラズマＣＶＤにより形成されるＤＬＣ被膜の厚みが異なり、型表面に形成される微細な凹凸の精度が更に低下するため、特許文献１の金型では精度の高い極めて微細な成形をすることは到底不可能である。 However, in recent years, there has been an increasing demand for fine molding with high precision in fields such as biotechnology and optics, and accordingly, there is a demand for a mold that can perform fine molding. Since the DLC film is only formed on the portion of the mold base corresponding to the mold surface by the plasma CVD method, the mold cannot be formed with high accuracy and fineness. That is, there is no problem because a DLC film having a substantially uniform film thickness can be formed on a portion where the mold surface of the mold is flat, but in order to form irregularities on the surface of the molded product, a desired molding shape is required. After forming irregularities on the metal mold base in accordance with the mold surface, the DLC film must be formed to form the mold surface. It is very difficult to form. Furthermore, when a DLC film is formed on the fine uneven part, the thickness of the DLC film formed by plasma CVD differs between the part that becomes the shadow of the uneven part formed on the mold base and the other part. Since the precision of the fine unevenness formed on the surface is further lowered, it is impossible to form an extremely fine shape with high precision with the mold of Patent Document 1.
本発明の目的は、精度の高い微細な成形が可能な金型及びその製造方法を提供しようとするものである。 An object of the present invention is to provide a mold capable of performing highly precise and fine molding and a manufacturing method thereof.
請求項１の発明は、成形キャビティを形成する型表面の少なくとも一部にＤＬＣ被膜が形成された金型において、前記ＤＬＣ被膜に成形キャビティの一部をなす１又は複数の微細な凹部を形成したことを特徴とするものである。 According to a first aspect of the present invention, in a mold in which a DLC film is formed on at least a part of a mold surface forming a molding cavity, one or a plurality of fine recesses forming a part of the molding cavity are formed in the DLC film. It is characterized by this.
この金型によれば、成形キャビティの一部をなす１又は複数の微細な凹部がＤＬＣ被膜に形成され、このＤＬＣ被膜が型表面の少なくとも一部に形成された成形キャビティの形状に合わせて被成形品が成形される。 According to this mold, one or a plurality of fine recesses forming a part of the molding cavity are formed in the DLC film, and this DLC film is covered in accordance with the shape of the molding cavity formed on at least a part of the mold surface. A molded product is formed.
請求項２の発明は、請求項１の発明において、前記金型を形成する金型基材と前記ＤＬＣ被膜との間にクロム被膜を形成したことを特徴とするものである。この金型によれば、金型を形成する金型基材とＤＬＣ被膜との間に、ＤＬＣ被膜の剥離を防止するためのクロム被膜が形成される。 The invention of claim 2 is characterized in that, in the invention of claim 1, a chromium film is formed between a mold base material forming the mold and the DLC film. According to this mold, a chromium film for preventing peeling of the DLC film is formed between the mold substrate forming the mold and the DLC film.
請求項３の発明は、請求項１又は２の発明において、前記金型は射出成形用の金型であることを特徴とするものである。この金型の成形キャビティに合成樹脂などが射出されて、被成形品が所望の成形形状に形成される。 A third aspect of the invention is characterized in that, in the first or second aspect of the invention, the mold is a mold for injection molding. A synthetic resin or the like is injected into the molding cavity of the mold, and the molded product is formed into a desired molded shape.
請求項４の発明は、前記微細な凹部は集束イオンビームによりエッチングすることによって形成されることを特徴とするものである。この金型によれば、集束イオンビームによってＤＬＣ被膜がエッチングされて、成形キャビティの一部をなす１又は複数の微細な凹部が型表面に形成される。 According to a fourth aspect of the present invention, the fine recess is formed by etching with a focused ion beam. According to this mold, the DLC film is etched by the focused ion beam, and one or a plurality of fine recesses forming a part of the molding cavity are formed on the mold surface.
請求項５の発明は、前記微細の凹部はプラズマによりエッチングすることによって形成されることを特徴とするものである。この金型によれば、酸素プラズマなどのプラズマによってＤＬＣ被膜がエッチングされて、成形キャビティの一部をなす１又は複数の微細な凹部が型表面に形成される。 The invention according to claim 5 is characterized in that the fine recess is formed by etching with plasma. According to this mold, the DLC film is etched by plasma such as oxygen plasma, and one or more fine recesses forming a part of the molding cavity are formed on the mold surface.
請求項６の発明は、金型基材のうち成形キャビティを形成する型表面の少なくとも一部にＤＬＣ被膜を形成する被膜形成工程と、前記ＤＬＣ被膜の一部をエッチングして成形キャビティの一部をなす１又は複数の微細な凹部を形成するエッチング工程とを備えたことを特徴とするものである。 The invention according to claim 6 is a film forming step of forming a DLC film on at least a part of a mold surface forming a molding cavity in the mold base, and a part of the molding cavity by etching a part of the DLC film. And an etching step for forming one or a plurality of fine recesses forming the above.
この金型の製造方法によれば、被膜形成工程において金型基材のうち成形キャビティを形成する型表面の少なくとも一部にプラズマＣＶＤなどの化学的蒸着法やスパッタリングなどの物理的蒸着法などの種々の方法によってＤＬＣ被膜が形成され、エッチング工程において所望の成形形状に合わせてＤＬＣ被膜の一部がエッチングされ、成形キャビティの一部をなす１又は複数の微細な凹部が形成されて、金型が製造される。 According to this mold manufacturing method, a chemical vapor deposition method such as plasma CVD or a physical vapor deposition method such as sputtering is applied to at least a part of the mold surface that forms the molding cavity in the mold base in the film forming process. A DLC film is formed by various methods, a part of the DLC film is etched in accordance with a desired molding shape in an etching process, and one or a plurality of fine recesses forming a part of a molding cavity are formed, and a mold is formed. Is manufactured.
請求項７の発明は、請求項６の発明において、前記エッチング工程においては、集束イオンビームによってＤＬＣ被膜をエッチングすることを特徴とするものである。この金型の製造方法によれば、集束イオンビームによってＤＬＣ被膜がエッチングされて、微細な凹部が形成される。 A seventh aspect of the invention is characterized in that, in the sixth aspect of the invention, in the etching step, the DLC film is etched by a focused ion beam. According to this mold manufacturing method, the DLC film is etched by the focused ion beam to form fine recesses.
請求項８の発明は、請求項６の発明において、前記エッチング工程においては、プラズマによってＤＬＣ被膜をエッチングすることを特徴とするものである。この金型の製造方法によれば、酸素プラズマなどのプラズマによってＤＬＣ被膜がエッチングされて、微細な凹部が形成される。 The invention of claim 8 is characterized in that, in the invention of claim 6, in the etching step, the DLC film is etched by plasma. According to this mold manufacturing method, the DLC film is etched by plasma such as oxygen plasma to form fine recesses.
請求項１の発明によれば、型表面の少なくとも一部にＤＬＣ被膜を形成することで金型の耐摩耗性を高めると共に、この高硬度のＤＬＣ被膜に成形キャビティの一部をなす１又は複数の微細な凹部を形成することで、この金型による微細成形の精度を高めることができる。特に、ＤＬＣ被膜をエッチングなどにより一部を除去して凹部を形成する場合、ＤＬＣ被膜はアモルファス構造のため、結晶構造を有する被膜とは異なって結晶方位の影響を受けることがない。 According to the first aspect of the present invention, the DLC film is formed on at least a part of the mold surface, thereby improving the wear resistance of the mold, and one or more forming part of the molding cavity in the high hardness DLC film. By forming the fine concave portions, it is possible to increase the precision of fine molding by this mold. In particular, when a recess is formed by removing a part of the DLC film by etching or the like, the DLC film is not affected by crystal orientation unlike a film having a crystal structure because of the amorphous structure.
従って、特定の方向にＤＬＣ被膜が偏って除去されることを防止することができ、所望の成形形状に合わせてＤＬＣ被膜に正確に凹部を形成することができ、この金型による微細成形の精度を更に高めると共に、エッチングされたＤＬＣ被膜の表面を滑らかにすることができる。また、ＤＬＣ被膜の表面を滑らかにすることで、金型から被成形品を取り外す際に、被成形品がＤＬＣ被膜により破損することがないので、被成形品の生産効率を高めることができる。 Accordingly, it is possible to prevent the DLC film from being biased and removed in a specific direction, and it is possible to accurately form a recess in the DLC film in accordance with a desired molding shape. And the surface of the etched DLC film can be smoothed. In addition, by smoothing the surface of the DLC film, the molded product is not damaged by the DLC film when the molded product is removed from the mold, so that the production efficiency of the molded product can be increased.
請求項２の発明によれば、金型基材とＤＬＣ被膜との間にクロム被膜を形成することでＤＬＣ被膜の剥離を防止し、一つの金型による成形可能回数を大幅に延ばすことができる。 According to the second aspect of the present invention, it is possible to prevent peeling of the DLC film by forming a chromium film between the mold base and the DLC film, and to greatly extend the number of moldings possible with one mold. .
請求項３の発明によれば、射出成形において請求項１又は２と同様の効果を奏することができる。 According to the invention of claim 3, the same effects as those of claim 1 or 2 can be obtained in the injection molding.
請求項４の発明によれば、ビーム径を数ｎｍまで集束可能な集束イオンビームによりＤＬＣ被膜をエッチングして凹部を形成するので、更に正確に微細な凹部を形成することができ、この結果、この金型により成形される被成形品の精度を高めることができると共に、エッチングされたＤＬＣ被膜の表面を滑らかにすることができる。 According to the invention of claim 4, since the concave portion is formed by etching the DLC film with the focused ion beam that can focus the beam diameter to several nm, the fine concave portion can be formed more accurately. The precision of the molded product molded by this mold can be increased, and the surface of the etched DLC film can be smoothed.
請求項５の発明によれば、プラズマによりＤＬＣ被膜をエッチングするので、全てのエッチング領域を同時並行的にエッチングすることができるので、エッチング工程に要する時間を短縮することができる。 According to the fifth aspect of the present invention, since the DLC film is etched by plasma, all the etching regions can be etched simultaneously, so that the time required for the etching process can be shortened.
請求項６の発明によれば、型表面の少なくとも一部にＤＬＣ被膜を形成することで耐摩耗性に優れた金型を製造できると共に、この高硬度のＤＬＣ被膜の一部をエッチングにより除去して成形キャビティの一部をなす微細な凹部を形成することで、金型を所望の形状に合わせて正確に形成することができ、この金型により成形される被成形品の精度を高めることができる。特に、アモルファス構造のＤＬＣ被膜は、結晶構造を有する被膜のように結晶方位の影響を受けないため、特定の結晶方位に偏ってエッチングされることがなく、凹部を正確に形成することができる。 According to the invention of claim 6, a mold having excellent wear resistance can be manufactured by forming a DLC film on at least a part of the mold surface, and a part of the high hardness DLC film is removed by etching. By forming a fine recess that forms a part of the molding cavity, the mold can be accurately formed according to the desired shape, and the precision of the molded product molded by this mold can be increased. it can. In particular, since the DLC film having an amorphous structure is not affected by the crystal orientation unlike the film having a crystal structure, the concave portion can be formed accurately without being etched in a specific crystal orientation.
請求項７の発明によれば、ビーム径を数ｎｍ程度まで集束可能な集束イオンビームによってＤＬＣ被膜をエッチングするので、凹部を正確に形成して微細成形の精度を高めると共に、エッチングされたＤＬＣ被膜の表面をも更に滑らかにすることができる。 According to the seventh aspect of the present invention, the DLC film is etched by the focused ion beam that can be focused to a beam diameter of about several nanometers. The surface can be made even smoother.
請求項８の発明によれば、プラズマによりＤＬＣ被膜をエッチングするので、全てのエッチング領域を同時並行的にエッチングすることができ、エッチング工程に要する時間を短縮することができる。 According to the invention of claim 8, since the DLC film is etched by plasma, all the etching regions can be etched simultaneously and the time required for the etching process can be shortened.
本発明は、成形キャビティを形成する型表面の少なくとも一部にＤＬＣ被膜が形成された金型において、前記ＤＬＣ被膜に成形キャビティの一部をなす１又は複数の微細な凹部を形成したことを特徴とするものであり、本願の発明はその金型とその金型の製造方法を含むものである。 The present invention is characterized in that, in a mold in which a DLC film is formed on at least a part of a mold surface forming a molding cavity, one or a plurality of fine recesses forming a part of the molding cavity are formed in the DLC film. The invention of the present application includes the mold and a method for manufacturing the mold.
以下、本発明の実施例について図面を参照して説明する。本実施例は、ＤＮＡ産物のサイズ分離用のナノチャネルに設けられるナノピラーアレーを有する電気泳動チップを製造するための射出成形用の金型において、特に、ナノピラーアレーを成形する部分に本発明を適用した一例である。まず、図１を参照して、電気泳動チップ４について簡単に説明する。この電気泳動チップ４は、材質がＰＭＭＡからなり、上面部に分離チャネル５と導入チャネル６からなる十字状の流路が形成され、上面に被せられるふたガラス部材７には両チャネル５,６の端部に対応する位置に試料導入と電極挿入のための４つの貫通孔８が形成され、各貫通孔８の周囲には液だめ用ガラス８ａが接着されている。尚、次に説明するナノピラーアレー１は分離チャンネル５の途中部に設けられている。 Embodiments of the present invention will be described below with reference to the drawings. In this example, the present invention is applied to a mold for injection molding for producing an electrophoresis chip having a nanopillar array provided in a nanochannel for size separation of DNA products, particularly to a portion for molding the nanopillar array. This is an example. First, the electrophoresis chip 4 will be briefly described with reference to FIG. The electrophoresis chip 4 is made of PMMA and has a cross-shaped flow path formed of a separation channel 5 and an introduction channel 6 on the upper surface portion. The lid glass member 7 covered on the upper surface has both the channels 5 and 6 formed thereon. Four through holes 8 for sample introduction and electrode insertion are formed at positions corresponding to the ends, and a reservoir glass 8 a is bonded around each through hole 8. The nanopillar array 1 described below is provided in the middle of the separation channel 5.
次に、図２を参照して、ナノピラーアレー１について簡単に説明する。このナノピラーアレー１は、ナノチャネルの幅約５０μｍの流路に設けられ、特定の電流を印加して、微量試料の流路内の電気浸透、電気泳動現象により試料内のＤＮＡ産物がナノピラー間の隙間を通過することで、ＤＮＡ産物のサイズ分離を高速に行うものである。図１,図２に示すように、このナノピラーアレー１は電気泳動チップ４の分離チャネル５内に形成されており、材質はＰＭＭＡ(ポリメチルメタクリレート)からなり、５０μｍ×２０ｍｍの矩形状で厚さ約１ｍｍの板部２に複数のナノピラー３が一体的に立設されたものである。各ナノピラー３は直径５００ｎｍ、高さ１μｍの円柱状に形成され、これらナノピラー３は間隔５００ｎｍで板部２の上面の全面に亙って均一にマトリックス状で配列されている。尚、ＰＭＭＡは一例であり、他の合成樹脂に適宜変更可能である。 Next, the nanopillar array 1 will be briefly described with reference to FIG. The nanopillar array 1 is provided in a channel having a nanochannel width of about 50 μm. A specific current is applied to the DNA product in the sample between the nanopillars due to electroosmosis and electrophoresis in the sample channel. By passing through the gap, the size separation of the DNA product is performed at high speed. As shown in FIGS. 1 and 2, the nanopillar array 1 is formed in a separation channel 5 of an electrophoresis chip 4 and is made of PMMA (polymethylmethacrylate) and has a rectangular shape of 50 μm × 20 mm and a thickness. A plurality of nanopillars 3 are integrally erected on a plate portion 2 of about 1 mm. Each nanopillar 3 is formed in a columnar shape having a diameter of 500 nm and a height of 1 μm, and these nanopillars 3 are arranged in a matrix form uniformly over the entire upper surface of the plate portion 2 with a spacing of 500 nm. In addition, PMMA is an example and can be suitably changed to other synthetic resins.
次に、ナノピラーアレー１を有する電気泳動チップ４を射出成形により成形する金型１０のうちの特にナノピラーアレー１を成形する部分について説明する。金型１０は、型表面１７に囲繞された成形キャビティ１１を形成する本体部１２と成形部１３とが分離可能に構成されている。本体部１２はＪＩＳ規格Ｓ４５Ｃ等のＳＣ材または、ＳＫ５等のＳＫ材または、ＳＵＳ３０３等のＳＵ材からなり、本体部１２の下端部には成形部１３を取り付けるための５０ｍｍ×３０ｍｍの矩形状の取付口１５が開口され、本体部１２の上面部にはＰＭＭＡを射出するための射出口１６が形成されている。本実施例においては射出口１６を上面部に設けているが、本体部１２の側壁に設けてもよい。 Next, the part which shape | molds especially the nano pillar array 1 among the metal mold | dies 10 which shape | mold the electrophoresis chip 4 which has the nano pillar array 1 by injection molding is demonstrated. The mold 10 is configured such that a main body portion 12 and a molding portion 13 that form a molding cavity 11 surrounded by a mold surface 17 are separable. The main body portion 12 is made of SC material such as JIS standard S45C, SK material such as SK5, or SU material such as SUS303, and the lower end portion of the main body portion 12 has a rectangular shape of 50 mm × 30 mm for attaching the molding portion 13. An attachment port 15 is opened, and an injection port 16 for injecting PMMA is formed on the upper surface of the main body 12. In the present embodiment, the injection port 16 is provided on the upper surface portion, but may be provided on the side wall of the main body portion 12.
図３に示すように、成形部１３は取付口１５と同形状の５０ｍｍ×３０ｍｍの矩形状に形成されている。図４に示すように、成形部１３の上面、つまり成形キャビティ１１を形成する型表面１７の一部を形成する面には、金型基材２０の表層部にクロム被膜２１とＤＬＣ被膜２２とを形成した構造を備えている。クロム被膜２１は、金型基材２０からＤＬＣ被膜２２が剥離するのを防ぐために、金型基材２０の表面に約０.５μｍの厚さで形成されている。 As shown in FIG. 3, the molding portion 13 is formed in a rectangular shape of 50 mm × 30 mm having the same shape as the attachment port 15. As shown in FIG. 4, the upper surface of the molding part 13, that is, the surface that forms a part of the mold surface 17 that forms the molding cavity 11, has a chromium coating 21 and a DLC coating 22 on the surface layer part of the mold base 20. Is provided. The chromium coating 21 is formed on the surface of the mold base 20 with a thickness of about 0.5 μm in order to prevent the DLC coating 22 from peeling off from the mold base 20.
ＤＬＣ被膜２２はクロム被膜２１の表面に厚さ約２μｍの厚さで形成されている。このＤＬＣ被膜２２は、シリコンを含有させているので、内部応力を緩和してひび割れを防ぐことができ、通常２０μｍ程度の厚みが限界のＤＬＣ被膜を数１００μｍまで形成することができる。また、このＤＬＣ被膜２２は、被膜形成時の水素含有量によって硬度の調整をすることができ、ＨＶ(ビッカース硬さ)を数１００からダイヤモンドのＨＶに近い８０００程度の高硬度被膜に形成することができ、本実施例では、ＨＶ２０００のＤＬＣ被膜２２が形成されている。ＤＬＣ被膜２２の摩擦係数は約０.１以下であり、耐摩耗性において非常に優れた被膜である。尚、クロム被膜２１とＤＬＣ被膜２２の厚さは一例に過ぎず、前記の値よりも大きくてもよく少なくてもよい。 The DLC film 22 is formed on the surface of the chromium film 21 with a thickness of about 2 μm. Since this DLC film 22 contains silicon, it can relieve internal stress and prevent cracks, and a DLC film whose thickness is usually about 20 μm can be formed up to several hundreds of μm. The DLC film 22 can be adjusted in hardness according to the hydrogen content at the time of film formation, and the DLC film 22 is formed into a high-hardness film having an HV (Vickers hardness) of several hundreds to about 8000, which is close to HV of diamond. In this embodiment, the HV2000 DLC film 22 is formed. The coefficient of friction of the DLC film 22 is about 0.1 or less, and is a very excellent film in wear resistance. The thicknesses of the chromium coating 21 and the DLC coating 22 are merely examples, and may be larger or smaller than the above values.
図４,図５に示すように、ＤＬＣ被膜２２には、成形キャビティ１１の一部をなす直径約５００ｎｍ,深さ約１μｍの円柱状の複数の凹部２５が約５００ｎｍ間隔で形成されている。凹部２５は、アモルファス構造のＤＬＣ被膜２２に形成されているので、結晶方位の影響を受けないため表面を滑らかに且つ所望の形状に合わせて正確に形成することができると共に、後述する極めてビーム径を小さくできる集束イオンビーム３２により形成することで更に正確に形成することができる。これら凹部２５は、射出成形の際にナノピラー３を成形するためのものである。 As shown in FIGS. 4 and 5, a plurality of cylindrical recesses 25 having a diameter of about 500 nm and a depth of about 1 μm forming a part of the molding cavity 11 are formed in the DLC film 22 at intervals of about 500 nm. Since the concave portion 25 is formed in the DLC film 22 having an amorphous structure, the surface can be formed smoothly and accurately in accordance with a desired shape because it is not affected by the crystal orientation, and an extremely small beam diameter described later. Can be formed more accurately by using the focused ion beam 32 that can reduce the size of the beam. These recesses 25 are for forming the nanopillar 3 during injection molding.
この金型１０においてＰＭＭＡを射出成形する場合には、本体部１２の取付口１５に成形部１３を組み込み、その金型１０を約８０℃に加温する。次に、約２６０℃で溶融させたＰＭＭＡを射出口１６から成形キャビティ１１内に射出して充填し、ＰＭＭＡが硬化するまで冷却する。その後、本体部１２から成形部１３を取り外し、成形部１３からナノピラーアレー１を取り外す。この際、集束イオンビーム３２により形成された凹部２５の表面は非常に滑らかなため、ナノピラー３が凹部２５の表面に引っ掛かることがない。従って、取り外し工程において、ナノピラーアレー１の成形キャビティへの抱き付きによる破損や、反り等の変形を防ぐことができる。尚、取り外しの工程おいては、金型内に成形品の取り外し機構を設け、自動的に行うようにしてもよい。また、ＰＭＭＡが硬化するまで冷却する工程においては所定時間冷却した後、しばらく放置することにしてもよい。 When PMMA is injection-molded in the mold 10, the molding part 13 is incorporated in the attachment port 15 of the main body part 12, and the mold 10 is heated to about 80 ° C. Next, PMMA melted at about 260 ° C. is injected and filled into the molding cavity 11 from the injection port 16 and cooled until the PMMA is cured. Thereafter, the molded part 13 is removed from the main body part 12, and the nanopillar array 1 is removed from the molded part 13. At this time, since the surface of the recess 25 formed by the focused ion beam 32 is very smooth, the nanopillar 3 is not caught on the surface of the recess 25. Therefore, it is possible to prevent damage due to the nanopillar array 1 being held in the molding cavity and deformation such as warpage in the removal step. In the removal process, a removal mechanism for the molded product may be provided in the mold to automatically perform the removal process. Moreover, in the process of cooling until PMMA hardens | cures, after cooling for a predetermined time, you may leave it for a while.
次に、金型１０の成形部１３の製造方法について説明する。まず、５０ｍｍ×３０ｍｍの矩形の板状に金型部材を成形し、凹凸が１０ｎｍ以下になるように板状の金型部材の表面をラップ研磨により鏡面加工して平坦化し金型基材２０を製作する。次に、この平坦化された金型基材２０をスパッタリング用のチャンバー内に導入する(図６-１)。次に、被膜形成工程において、クロムをターゲットにしたスパッタリングにより厚さ約０.５μｍのクロム被膜２１を金型基材２０の上面のうちナノピラーアレー１を成形する部分(成形キャビティ１１を形成する型表面１７の一部に相当する面)に形成する(図６-２)。 Next, a manufacturing method of the molding part 13 of the mold 10 will be described. First, a mold member is formed into a rectangular plate shape of 50 mm × 30 mm, and the surface of the plate-like mold member is mirror-finished by lapping so as to have an unevenness of 10 nm or less. To manufacture. Next, the flattened mold base 20 is introduced into a sputtering chamber (FIG. 6-1). Next, in the film forming step, a chromium film 21 having a thickness of about 0.5 μm is formed on the upper surface of the mold base 20 by the sputtering using chrome as a target (the mold for forming the molding cavity 11). It is formed on a surface corresponding to a part of the surface 17 (FIG. 6-2).
次に、クロム被膜２１が形成された金型基材２０をプラズマＣＶＤ用のチャンバー内に導入する。このチャンバー内にメタンガスを供給し、メタンガスをプラズマ化してクロム被膜２１の表面にプラズマ化されたメタンを堆積しつつ、金型基材２０にバイアス電圧を印加することでイオンを衝突させながら、堆積された被膜中の水素あるいは低い結合分子を飛ばし、水素含有量の少ない厚さ約２μｍのＤＬＣ被膜２２を成形キャビティ１１を形成する型表面１７の一部に対応する部分に成膜する(図６-３)。ＤＬＣ被膜２２を成膜する際に、ＤＬＣ被膜２２内の内部応力を緩和してＤＬＣ被膜２２のひび割れを防止するために、メタンガスと共にテトラメチルシラン(ＴＭＳ)を導入し、このテトラメチルシラン(ＴＭＳ)内のシリコンをプラズマ化させてＤＬＣ被膜２２内にシリコンを含有させる。 Next, the mold base 20 on which the chromium coating 21 is formed is introduced into a plasma CVD chamber. The methane gas is supplied into the chamber, the methane gas is turned into plasma, and the plasma methane is deposited on the surface of the chromium coating 21, while the ion is collided by applying a bias voltage to the mold base 20 and depositing. Hydrogen or low-binding molecules in the coated film are blown off, and a DLC film 22 having a small hydrogen content and a thickness of about 2 μm is formed on a portion corresponding to a part of the mold surface 17 forming the molding cavity 11 (FIG. 6). -3). When the DLC film 22 is formed, tetramethylsilane (TMS) is introduced together with methane gas in order to relieve internal stress in the DLC film 22 and prevent cracking of the DLC film 22, and this tetramethylsilane (TMS ) Is converted into plasma and silicon is contained in the DLC film 22.
次に、図７に示すように、エッチング工程において、ＤＬＣ被膜２２が形成された金型基材２０を集束イオンビーム装置３０のＸＹテーブル３１に固定し、集束イオンビーム３２によってＤＬＣ被膜２２の一部をエッチングして成形キャビティ１１の一部をなす複数の微細な凹部２５を形成する。具体的には、液体ガリウムをイオン源とし、引き出し電極３３の間に電界をかけてイオン銃３４からガリウムイオンを引き出し、このガリウムイオンを加速電圧３０ｋＶで加速してビーム電流１８７ｐＡのイオンビームとし、このイオンビームをコンデンサーレンズなど集束手段３５により集束したビーム径２３ｎｍの集束イオンビーム３２によりＤＬＣ被膜２２の表面部をエッチングしつつ、ＸＹテーブル３１と共に金型基材２０をＸＹ方向に移動させて、ナノピラーアレー１のナノピラー３に対応させた直径約５００ｎｍ、深さ約１μｍの凹部２５を、約５００ｎｍ間隔でＤＬＣ被膜２５の全面に亙って形成する。尚、金型基材２０を固定テーブルに固定した状態で、集束させた集束イオンビーム３２に電圧を印加し、この印加電圧を調整して集束イオンビーム３２をＤＬＣ被膜２２の表面で移動させつつ凹部２５を形成してもよい。 Next, as shown in FIG. 7, in the etching process, the mold base 20 on which the DLC film 22 is formed is fixed to the XY table 31 of the focused ion beam apparatus 30, and one of the DLC film 22 is formed by the focused ion beam 32. The portions are etched to form a plurality of fine recesses 25 forming a part of the molding cavity 11. Specifically, liquid gallium is used as an ion source, an electric field is applied between the extraction electrodes 33, gallium ions are extracted from the ion gun 34, and the gallium ions are accelerated at an acceleration voltage of 30 kV to form an ion beam having a beam current of 187 pA. While the surface portion of the DLC film 22 is etched by the focused ion beam 32 having a beam diameter of 23 nm focused by the focusing means 35 such as a condenser lens, the mold base 20 is moved in the XY direction together with the XY table 31, Concave portions 25 having a diameter of about 500 nm and a depth of about 1 μm corresponding to the nanopillars 3 of the nanopillar array 1 are formed over the entire surface of the DLC film 25 at intervals of about 500 nm. A voltage is applied to the focused focused ion beam 32 while the mold base 20 is fixed to a fixed table, and this applied voltage is adjusted to move the focused ion beam 32 on the surface of the DLC film 22. The recess 25 may be formed.
次に、上述した金型１０、特に、成形部１３及びその製造方法の作用及び効果について説明する。
この金型１０によれば、硬質の成形キャビティ１１を形成する成形部１３の型表面１７にＤＬＣ被膜２２を形成することで成形部１３の耐摩耗性を高めると共に、結晶方位性のないアモルファス構造のＤＬＣ被膜２２を、ビーム径を極めて小さく集束させることができる集束イオンビーム３２によりエッチングし、成形キャビティ１１の一部をなす凹部２５を形成するので、凹部２５を所望の成形形状に合わせて正確に形成することができると共に、エッチングによって形成された凹部２５の表面を滑らかにすることができる。従って、この金型１０を用いた射出成形によって精度の高いナノピラーアレー１を成形することができ、また、成形部１３からナノピラーアレー１を取り外す際に、凹部２５の表面によってナノピラーアレー１を破損することがなく、生産効率を向上させることができる。
Next, the operation and effect of the mold 10 described above, in particular, the molded portion 13 and the manufacturing method thereof will be described.
According to this mold 10, the DLC film 22 is formed on the mold surface 17 of the molding part 13 that forms the hard molding cavity 11, thereby improving the wear resistance of the molding part 13 and an amorphous structure having no crystal orientation. The DLC film 22 is etched by a focused ion beam 32 that can be focused with a very small beam diameter to form a concave portion 25 that forms a part of the molding cavity 11, so that the concave portion 25 can be accurately matched to a desired molding shape. The surface of the recess 25 formed by etching can be made smooth. Therefore, the nanopillar array 1 with high accuracy can be formed by injection molding using the mold 10, and the nanopillar array 1 is broken by the surface of the recess 25 when the nanopillar array 1 is removed from the molding portion 13. This can improve production efficiency.
金型基材２０とＤＬＣ被膜２２との間にクロム被膜２１を形成することで、金型基材２０からのＤＬＣ被膜２２の剥離を防止し、この金型１０による成形可能回数を大幅に延ばすことができる。ＤＬＣ被膜２２にシリコンを含有させているので、ＤＬＣ被膜２２の内部応力を緩和し、ＤＬＣ被膜２２のひび割れなどの破損を防ぐことができる。 By forming the chromium coating 21 between the mold base 20 and the DLC coating 22, the peeling of the DLC coating 22 from the mold base 20 is prevented, and the number of moldings possible with the mold 10 is greatly increased. be able to. Since silicon is contained in the DLC film 22, internal stress of the DLC film 22 can be relaxed, and damage such as cracking of the DLC film 22 can be prevented.
以上説明した実施例を部分的に変更した変更例について説明する。
１）集束イオンビームによりＤＬＣ被膜をエッチングする際に、凹部を形成する部分のみを露出させるための穴が形成されたマスキング部材をＤＬＣ被膜の表面に被せてエッチングしてよい。このようにマスキング部材を被せた状態でＤＬＣ被膜をエッチングすることで、金型基材を移動させるＸＹテーブルの制御を簡単化することができる。例えば、上述した円柱状の凹部を形成する場合、円形状の開口部が形成されたマスキング部材によりＤＬＣ被膜をマスキングすることで、開口部以外の領域がエッチングされることを防止できるので、円形状の開口部を含む領域で集束イオンビームを相対移動させれば円柱状の凹部が形成できる。従って、集束イオンビームを凹部に合わせて円形状に相対移動させるのではなく、円形状の開口部を含む正方形内で相対移動させることで、集束イオンビームを相対移動させるためのＸＹテーブルの制御を簡単化することができる。
A modified example in which the embodiment described above is partially modified will be described.
1) When etching a DLC film with a focused ion beam, a masking member in which a hole for exposing only a portion where a concave portion is to be formed may be placed on the surface of the DLC film for etching. By thus etching the DLC film with the masking member covered, it is possible to simplify the control of the XY table that moves the mold base. For example, when the above-described cylindrical recess is formed, masking the DLC film with a masking member having a circular opening can prevent the area other than the opening from being etched. If the focused ion beam is relatively moved in the region including the opening, a cylindrical recess can be formed. Therefore, the relative movement of the focused ion beam is relatively controlled by moving the focused ion beam in a square including a circular opening instead of moving the focused ion beam in a circular shape according to the concave portion. It can be simplified.
２）上述の実施例においては、ＤＬＣ被膜２２にシリコンを含有させたが、このシリコンは必須のものではなく、省略してもよく、また、他の金属不純物を代用してもよい。特に、ＤＬＣ被膜を２０μｍ以下の厚さで形成する場合には、ＤＬＣ被膜がひび割れすることが少ないので、シリコンを省略することができる。このようにシリコンを含まないＤＬＣ被膜を形成する場合には、クロム被膜とＤＬＣ被膜をＵＢＭスパッタリングにより連続的に形成してもよい。具体的には、まず、クロムをターゲットとするスパッタリングにより所定の膜厚のクロム被膜を形成し、その後、クロムのスパッタリングを継続しつつ、グラファイトをターゲットとするスパッタリングを同時並行して行い、クロムのスパッタ率を徐々に減らしつつグラファイトのスパッタ率を増加させることでＤＬＣ被膜をクロム被膜上に形成する。この際、テトラメチルシラン(ＴＭＳ)ガスを同時に導入して、シリコン含有のＤＬＣを形成することもできる。 2) In the above-described embodiments, silicon is contained in the DLC film 22, but this silicon is not essential and may be omitted or other metal impurities may be substituted. In particular, when the DLC film is formed with a thickness of 20 μm or less, the DLC film is rarely cracked, so that silicon can be omitted. Thus, when forming the DLC film which does not contain silicon | silicone, you may form a chromium film and a DLC film continuously by UBM sputtering. Specifically, first, a chromium film having a predetermined film thickness is formed by sputtering using chromium as a target, and then, while sputtering of chromium is continued, sputtering using graphite as a target is simultaneously performed in parallel. A DLC film is formed on the chromium film by gradually decreasing the sputtering rate and increasing the sputtering rate of graphite. At this time, tetramethylsilane (TMS) gas can be simultaneously introduced to form a silicon-containing DLC.
３）上述の実施例においてはＤＬＣ被膜２２と金型基材２０の間にクロム被膜２１を形成したが、クロム被膜の代わりにタングステン被膜、チタン被膜、シリコン被膜、ニッケル被膜などを形成してもよい。 3) In the above embodiment, the chromium film 21 is formed between the DLC film 22 and the mold base 20, but a tungsten film, a titanium film, a silicon film, a nickel film, etc. may be formed instead of the chromium film. Good.
４）上述の実施例においては、集束イオンビーム３２によってＤＬＣ被膜２２をエッチングしたが、レーザーによってＤＬＣ被膜をエッチングしてもよい。エッチング可能なレーザーとしては、フェムト秒レーザ(レーザの波長が８７０ｎｍ,パルス幅がフェムト秒)、紫外線レーザ(レーザの波長が紫外線領域。例えば、パルス幅が２０〜１００ｎｍであって、波長が３５３ｎｍのＴＨＧ−ＹＡＧレーザ,波長が２６５ｎｍのＦＨＧ−ＹＡＧレーザなどの固体レーザ)、エキシマレーザ(波長が３０８ｎｍ又は２４８ｎｍ,パルス幅が２０〜３０ｎｍ)などが考えられる。 4) In the above-described embodiment, the DLC film 22 is etched by the focused ion beam 32. However, the DLC film may be etched by a laser. Etchable lasers include femtosecond laser (laser wavelength is 870 nm, pulse width is femtosecond), ultraviolet laser (laser wavelength is in the ultraviolet region. For example, pulse width is 20 to 100 nm and wavelength is 353 nm. A THG-YAG laser, a solid-state laser such as an FHG-YAG laser having a wavelength of 265 nm), an excimer laser (wavelength of 308 nm or 248 nm, and a pulse width of 20 to 30 nm) can be considered.
５）上述の実施例においては、集束イオンビーム３２によってＤＬＣ被膜２２をエッチングしたが、ＤＬＣ被膜をプラズマによってエッチングして、凹部を形成してもよい。このようにプラズマによりエッチングする場合、まず、金型基材に成膜されたＤＬＣ被膜にレジスト膜を塗布し、このレジスト膜にＵＶ露光などによって所望の微細パターンを転写した後、エッチング部分のレジスト膜を除去する。次に、レジスト膜が塗布された金型基材をチャンバー内に導入し、このチャンバー内に供給された酸素ガスに高周波高電圧を印加し、酸素ガスを電離させてプラズマ化させると、この酸素プラズマとＤＬＣ被膜とが反応して一酸化炭素又は二酸化炭素となり、レジスト膜から露出しているＤＬＣ被膜がエッチングされる。尚、レジスト膜の代わりに、所望の部分に露出孔が形成されたマスキング部材をＤＬＣ被膜に被せ、その露出孔から露出しているＤＬＣ被膜を酸素プラズマなどにのプラズマによりエッチングしてもよい。このようにプラズマによりエッチングすることで、全ての凹部を同時並行でエッチングすることができるので、エッチング工程に要する時間を短縮することができる。 5) In the above-described embodiment, the DLC film 22 is etched by the focused ion beam 32. However, the DLC film may be etched by plasma to form a recess. When etching with plasma as described above, first, a resist film is applied to the DLC film formed on the mold base, and a desired fine pattern is transferred to the resist film by UV exposure or the like. Remove the membrane. Next, a mold base material coated with a resist film is introduced into the chamber, a high frequency high voltage is applied to the oxygen gas supplied into the chamber, and the oxygen gas is ionized to form plasma. The plasma and the DLC film react to become carbon monoxide or carbon dioxide, and the DLC film exposed from the resist film is etched. Instead of the resist film, a masking member in which an exposed hole is formed in a desired portion may be covered with a DLC film, and the DLC film exposed from the exposed hole may be etched by plasma such as oxygen plasma. By etching with plasma in this way, all the recesses can be etched in parallel, so that the time required for the etching process can be shortened.
６）上述の実施例においては、ナノピラー３が形成されたナノピラーアレー１に本発明を適用したが、他の円柱状や角柱状の突起など種々の突起部を有する被成形品を成形する金型に本発明を適用してもよい。例えば、光学部品のフォトニッククリスタル、ナノレンズアレイ、ナノフィルターアレイなどが考えられる。 6) In the above-described embodiment, the present invention is applied to the nanopillar array 1 on which the nanopillars 3 are formed. However, a mold for molding a molded article having various projections such as other columnar or prismatic projections. The present invention may be applied to. For example, a photonic crystal of an optical component, a nano lens array, a nano filter array, or the like can be considered.
７）被成形品に微細な孔を形成するための金型に本発明を適用してもよい。例えば、図８に示すように、平坦なＤＬＣ被膜４０を形成し、８個の角錐状の突起４１が２行４列に形成されるようにＤＬＣ被膜４０の一部を残して集束イオンビームによってエッチングする。図８に示すように、集束イオンビームによってエッチングされたＤＬＣ被膜４０の表面は非常に滑らかに形成される。このように形成された金型を用いて射出成形することで、突起４１に対応した複数の孔を被成形品に形成することができる。例えば、このような微細な孔を形成する被成形品としては、一本鎖ＤＮＡを一本ずつ固定化して種々の反応を行うための直径約５００ｎｍの孔が複数空いたＤＮＡセルアレイ、分析用や医療用に用いられるフィルター、微量な液滴や気体を吐出するナノノズルフィルムなどが考えられる。
８）上述の実施例においては、ナノピラーを等間隔で配設したが、異なる間隔でナノピラーを配設してもよい。
7) You may apply this invention to the metal mold | die for forming a fine hole in a to-be-molded product. For example, as shown in FIG. 8, a flat DLC film 40 is formed, and a part of the DLC film 40 is left so that eight pyramid-shaped projections 41 are formed in 2 rows and 4 columns. Etch. As shown in FIG. 8, the surface of the DLC film 40 etched by the focused ion beam is formed very smoothly. A plurality of holes corresponding to the protrusions 41 can be formed in the molded product by injection molding using the mold thus formed. For example, as a molded article that forms such fine holes, a DNA cell array having a plurality of holes of about 500 nm in diameter for immobilizing single-stranded DNA one by one and performing various reactions, A filter used for medical purposes, a nano-nozzle film that discharges a minute amount of droplets or gas, and the like are conceivable.
8) In the above-described embodiments, the nanopillars are arranged at equal intervals, but the nanopillars may be arranged at different intervals.
上述した実施例においては、射出成形によりナノピラーアレーを有する電気泳動チップを成形する金型に本発明を適用したが、種々の成形方法により成形する金型に本発明を適用することができる。更に、本発明は以上説明した実施例に限定されるものではなく、当業者であれば、本発明の趣旨を逸脱しない範囲で前記実施例に種々の変更を付加して実施することができ、本発明はそれらの変更例をも包含するものである。 In the embodiment described above, the present invention is applied to a mold for molding an electrophoresis chip having a nanopillar array by injection molding, but the present invention can be applied to a mold for molding by various molding methods. Furthermore, the present invention is not limited to the above-described embodiments, and those skilled in the art can implement various modifications to the above embodiments without departing from the spirit of the present invention. The present invention includes those modifications.
１０ 金型
１１ 成形キャビティ
１３ 成形部
１７ 型表面
２０ 金型基材
２１ クロム被膜
２２ ＤＬＣ被膜
２５ 凹部
３２ 集束イオンビーム
DESCRIPTION OF SYMBOLS 10 Mold 11 Molding cavity 13 Molding part 17 Mold surface 20 Mold base material 21 Chromium coating 22 DLC coating 25 Concavity 32 Focused ion beam
Claims (8)
前記ＤＬＣ被膜に成形キャビティの一部をなす１又は複数の微細な凹部を形成したことを特徴とする金型。 In a mold in which a DLC film is formed on at least a part of a mold surface forming a molding cavity,
A mold having one or more fine recesses forming a part of a molding cavity formed in the DLC film.
前記ＤＬＣ被膜の一部をエッチングして成形キャビティの一部をなす１又は複数の微細な凹部を形成するエッチング工程と、
を備えたことを特徴とする金型の製造方法。 A film forming step of forming a DLC film on at least a part of the mold surface forming the molding cavity of the mold base;
An etching step of etching one part of the DLC film to form one or more fine recesses forming a part of the molding cavity;
A method of manufacturing a mold, comprising:
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