JP2005191391A - Atmospheric pressure cvd device and exhaust gas flow control method therefor - Google Patents

Atmospheric pressure cvd device and exhaust gas flow control method therefor Download PDF

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JP2005191391A
JP2005191391A JP2003432901A JP2003432901A JP2005191391A JP 2005191391 A JP2005191391 A JP 2005191391A JP 2003432901 A JP2003432901 A JP 2003432901A JP 2003432901 A JP2003432901 A JP 2003432901A JP 2005191391 A JP2005191391 A JP 2005191391A
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Tatsusaburo Yamakawa
達三朗 山川
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Sekisui Chemical Co Ltd
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<P>PROBLEM TO BE SOLVED: To provide an atmospheric pressure CVD device for stably controlling the flow rate of exhaust gas, and for stably maintaining the flow of raw material gas in a film formation chamber and the exhaust gas flow control method of the atmospheric CVD device. <P>SOLUTION: A film formation chamber is provided with a film forming head 2 having a raw material gas supplying part 7 which supplies raw material gas to a substrate 4 conveyed downward by a substrate conveying mechanism to form a thin film, and a gas discharging part 7 arranged adjacently to the raw material gas supplying part 7 for discharging unreacted raw material gas and reacted products. This atmospheric pressure CVD device is provided with a blower 10 which discharges exhaust gas from the gas discharging part 7 through exhaust pipelines 9a and 9b to the outside. The exhaust pipeline 9a is arranged with a fine differential pressure gage MG, and connected with an exhaust gas dilution pipeline 9c in which dilution gas flows. This atmospheric pressure CVD device is also provided with a gas flow controlling means 11 for controlling the inflow of the dilution gas from the exhaust gas dilution pipeline 9c so that the detected differential pressure of the fine differential pressure gage MG can be maintained at a predetermined target value. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、半導体ウエハ、光ディスク、液晶表示装置などの基材の表面に薄膜を成膜するためのＣＶＤ装置に関し、詳述すると、基材搬送機構により下方に搬送された基材に原料ガスを供給して前記基材に薄膜を成膜する原料ガス供給部と、前記原料ガス供給部に隣接して未反応の原料ガス及び反応生成物を排気するガス排気部を備えた成膜ヘッドを設け、前記ガス排気部からの排ガスを排気管路を介して外部に排気するブロワーを備えてなる常圧ＣＶＤ装置及び常圧ＣＶＤ装置の排ガス流制御方法に関する。   The present invention relates to a CVD apparatus for forming a thin film on the surface of a substrate such as a semiconductor wafer, an optical disk, or a liquid crystal display device. More specifically, the present invention relates to a source gas applied to a substrate conveyed downward by a substrate conveyance mechanism. A film forming head provided with a source gas supply unit for supplying and forming a thin film on the substrate and a gas exhaust unit for exhausting unreacted source gas and reaction products adjacent to the source gas supply unit is provided. The present invention relates to an atmospheric pressure CVD apparatus including a blower for exhausting exhaust gas from the gas exhaust section to the outside through an exhaust pipe, and an exhaust gas flow control method for the atmospheric pressure CVD apparatus.

一般にＣＶＤ装置では、薄膜の膜厚分布が所定の厚さで均一に成膜されるように、成膜チャンバー内での原料ガスの流れを安定に維持することが重要で、減圧ＣＶＤ装置においては半導体製造プロセスのモニタリングおよび自動制御を行うＡＰＣ装置（Advanced Process Control）により、成膜チャンバー内の検出圧力に基づいて排気管路からの排気量を制御することで、成膜チャンバー内の圧力を一定に維持して原料ガスの流れを安定化させている。   In general, in a CVD apparatus, it is important to stably maintain the flow of the source gas in the film formation chamber so that the film thickness distribution of the thin film is uniformly formed at a predetermined thickness. The pressure inside the deposition chamber is kept constant by controlling the amount of exhaust from the exhaust line based on the detected pressure inside the deposition chamber using an advanced process control (APC) that monitors and automatically controls the semiconductor manufacturing process. To stabilize the flow of the raw material gas.

一方、常圧ＣＶＤ装置では反応部が常圧であるために、ブロワーの手前の排気管路内にオリフィスを設け、このオリフィスの入側と出側の圧力差を検出し、この検出信号に基づいて、静圧が一定に保たれるようにブロワーの駆動をインバーターで制御することにより成膜チャンバー内でのガスの流れを維持する静圧制御方式が採用されている。
特開２００１−１５４７３９号公報 On the other hand, since the reaction part is at normal pressure in the atmospheric pressure CVD apparatus, an orifice is provided in the exhaust pipe before the blower, and the pressure difference between the inlet side and the outlet side of this orifice is detected, and this detection signal is used. Thus, a static pressure control system is employed in which the flow of the blower is controlled by an inverter so that the static pressure is kept constant, thereby maintaining the gas flow in the film forming chamber.
Japanese Patent Laid-Open No. 2001-154739

しかし、上述した従来の静圧制御方式を採用する常圧ＣＶＤ装置によれば、成膜の膜厚均一性のため極微少の排気流量で成膜するものであり、検出される微差圧値の変動が極めて小さく、且つ、非常に不安定なため、ブロワーに対してフィードバック制御を行なうとチャタリングが発生し、その結果、排気流量が大きく変動する虞があるという問題があった。   However, according to the atmospheric pressure CVD apparatus adopting the conventional static pressure control method described above, the film is formed with a very small exhaust flow rate for the film thickness uniformity of the film formation, and the detected differential pressure value Is very unstable and very unstable. Therefore, when feedback control is performed on the blower, chattering occurs, and as a result, the exhaust flow rate may fluctuate greatly.

本発明は、上述の従来欠点に鑑み、排気流量を安定的に制御可能で、成膜チャンバー内での原料ガスの流れを安定に維持可能な常圧ＣＶＤ装置及び常圧ＣＶＤ装置の排ガス流制御方法を提供する点にある。   In view of the above-mentioned conventional drawbacks, the present invention can control the exhaust flow rate stably, and can control the source gas flow in the film forming chamber stably, and the exhaust gas flow control of the atmospheric pressure CVD device. The point is to provide a method.

上述の目的を達成するため、本発明による常圧ＣＶＤ装置の特徴構成は、特許請求の範囲の書類の請求項１に記載した通り、成膜チャンバーに、基材搬送機構により搬送された基材に原料ガスを供給して薄膜を成膜する原料ガス供給部と、前記原料ガス供給部に隣接して未反応の原料ガス及び反応生成物を排気するガス排気部を備えた成膜ヘッドを設け、前記ガス排気部からの排ガスを排気管路を介して外部に排気するブロワーを備えてなる常圧ＣＶＤ装置であって、前記排気管路に、微差圧計を配置するとともに希釈ガスを流入させる排ガス希釈管路を接続し、前記微差圧計による検出差圧が所定の目標値に維持されるように前記排ガス希釈管路からの希釈ガス流入量をフィードバック制御するガス流制御手段を設けてある点にある。   In order to achieve the above-described object, the atmospheric pressure CVD apparatus according to the present invention is characterized in that the base material transported to the film forming chamber by the base material transport mechanism as described in claim 1 of the claims. A film forming head is provided that includes a source gas supply unit that supplies a source gas to a thin film to form a thin film, and a gas exhaust unit that exhausts unreacted source gas and reaction products adjacent to the source gas supply unit. An atmospheric pressure CVD apparatus comprising a blower for exhausting the exhaust gas from the gas exhaust section to the outside through an exhaust pipe, wherein a fine differential pressure gauge is disposed in the exhaust pipe and a dilution gas is caused to flow A gas flow control means is provided for connecting the exhaust gas dilution pipe and feedback-controlling the dilution gas inflow from the exhaust gas dilution pipe so that the differential pressure detected by the fine differential pressure gauge is maintained at a predetermined target value. In the point.

また、本発明による常圧ＣＶＤ装置の特徴構成は、同請求項２に記載した通り、成膜チャンバーに、基材搬送機構により搬送された基材に原料ガスを供給して薄膜を成膜する原
料ガス供給部と、前記原料ガス供給部に隣接して未反応の原料ガス及び反応生成物を排気するガス排気部を備えた成膜ヘッドを設け、前記ガス排気部からの排ガスを排気管路を介して外部に排気するブロワーを備え、前記ガス排気部からの排ガス流を制御することにより前記原料ガス供給部から前記基材への原料ガスの供給量を調整する常圧ＣＶＤ装置の排ガス流制御方法であって、前記排気管路に配置された微差圧計による検出差圧が所定の目標値に維持されるように、前記排気管路に接続された排ガス希釈管路からの希釈ガス流入量をフィードバック制御する点にある。 Further, the atmospheric pressure CVD apparatus according to the present invention is characterized in that, as described in claim 2, a thin film is formed by supplying a raw material gas to a base material transported by a base material transport mechanism into a film forming chamber. A film forming head having a source gas supply unit and a gas exhaust unit for exhausting unreacted source gas and reaction products adjacent to the source gas supply unit is provided, and exhaust gas from the gas exhaust unit is exhausted The exhaust gas flow of the atmospheric pressure CVD apparatus is provided with a blower that exhausts to the outside via the gas, and controls the exhaust gas flow from the gas exhaust unit to adjust the supply amount of the raw material gas from the raw material gas supply unit to the base material In a control method, dilution gas inflow from an exhaust gas dilution pipe connected to the exhaust pipe so that a differential pressure detected by a micro differential pressure gauge disposed in the exhaust pipe is maintained at a predetermined target value. Point for feedback control of quantity A.

本発明によれば、ブロワーによる誘引量を所定量に維持しながらも、ガス排気部から排気される未反応の原料ガス及び反応生成物に微量の希釈ガス流入量を調整することにより微差圧計による検出差圧を目標値に迅速に収束するように制御できるので、ブロワーによる誘引量をフィードバック制御することによるオーバーシュートの問題が生じることなく、原料ガスの流れを安定的に調整できるようになるのである。   According to the present invention, the fine differential pressure gauge is adjusted by adjusting a small amount of diluted gas inflow to the unreacted source gas and reaction product exhausted from the gas exhaust section while maintaining the amount of attraction by the blower at a predetermined amount. Since the detection differential pressure due to can be controlled to quickly converge to the target value, the flow of the source gas can be stably adjusted without causing an overshoot problem due to feedback control of the attracting amount by the blower. It is.

従って、本発明により、排気流量を安定的に制御可能で、成膜チャンバー内での原料ガスの流れを安定に維持可能な常圧ＣＶＤ装置及び常圧ＣＶＤ装置の排ガス流制御方法を提供することができるようになった。   Therefore, according to the present invention, there are provided an atmospheric pressure CVD apparatus and an exhaust gas flow control method for an atmospheric pressure CVD apparatus capable of stably controlling the exhaust gas flow rate and stably maintaining the flow of the source gas in the film forming chamber. Can now.

以下に本発明による常圧ＣＶＤ装置の実施の形態を説明する。図１に示すように、常圧ＣＶＤ装置１は、成膜チャンバー（図示せず）内に、成膜ヘッド２と、トレイ３に載置された基材４としての半導体ウエハを前記成膜ヘッド２の下方に搬送する基材搬送機構５と、トレイ３上の基材を加熱する加熱装置６などを備えて構成される。   Embodiments of an atmospheric pressure CVD apparatus according to the present invention will be described below. As shown in FIG. 1, the atmospheric pressure CVD apparatus 1 includes a film formation head 2 and a semiconductor wafer as a substrate 4 placed on a tray 3 in a film formation chamber (not shown). 2, a substrate transport mechanism 5 that transports the substrate 2 below, a heating device 6 that heats the substrate on the tray 3, and the like.

前記基材搬送機構５は一対のエンドレスチェーン５ａにトレイホルダを介して所定間隔に配置されたトレイ３を駆動装置（図示せず）により回転させて前記成膜ヘッド２の下方に搬送するもので、本実施形態では各トレイ３に２枚の基材４がロボットアームにより自動載置されて順次搬送されるものである。   The base material transport mechanism 5 transports a tray 3 arranged at a predetermined interval to a pair of endless chains 5a via a tray holder by a driving device (not shown) and transports it below the film forming head 2. In this embodiment, two substrates 4 are automatically placed on each tray 3 by a robot arm and sequentially conveyed.

図２に示すように、前記成膜ヘッド２は、直下に搬送された基材４に原料ガスを供給して薄膜を成膜する原料ガス供給部７と、前記原料ガス供給部７に隣接して未反応の原料ガス及び反応生成物を排気するガス排気部８を備えて構成される。原料ガス供給部７は複数枚の矩形の金属プレート７ａが基材の搬送方向に対して直交する方向に互いに平行に且つ所定の間隔で配列され、原料ガス供給口７ｂから供給された原料ガスが夫々の金属プレート７ａの間隙から基材４に吹き付けられるように構成されている。前記ガス排気部８は、前記原料ガス供給部７の外側に隣接して配置され、前記原料ガス供給部７から供給された原料ガスのうち未反応の原料ガスや反応生成物が排気管路９ａ，９ｂを介してブロワー１０により排気されるように構成され、前記排気管路９ａ，９ｂからの排ガスは不図示の除害装置などにより無害化処理された後に大気開放される。   As shown in FIG. 2, the film formation head 2 is adjacent to the source gas supply unit 7 for supplying a source gas to the substrate 4 conveyed immediately below to form a thin film to form a thin film. And a gas exhaust unit 8 for exhausting unreacted source gas and reaction products. The source gas supply unit 7 includes a plurality of rectangular metal plates 7a arranged in parallel to each other at a predetermined interval in a direction orthogonal to the transport direction of the base material, and the source gas supplied from the source gas supply port 7b It is comprised so that it may spray on the base material 4 from the clearance gap between each metal plate 7a. The gas exhaust unit 8 is disposed adjacent to the outside of the source gas supply unit 7, and unreacted source gas and reaction products out of the source gas supplied from the source gas supply unit 7 are exhaust pipes 9a. 9b, the exhaust gas is exhausted by the blower 10, and the exhaust gas from the exhaust pipes 9a, 9b is detoxified by a decontamination device (not shown) and then released to the atmosphere.

一例として原料ガス供給口７ｂから夫々単独で供給されたＴＥＯＳ、シランガス（ＳｉＨ４）、アルシン、ホスフィンなどの原料ガスが前記原料ガス供給部７で混合され、さらに微量の空気と反応させることにより、加熱装置６で所定温度に加熱された基材表面にガラス膜などが成膜される。 As an example, source gases such as TEOS, silane gas (SiH 4 ), arsine, and phosphine supplied independently from the source gas supply port 7b are mixed in the source gas supply unit 7 and further reacted with a small amount of air. A glass film or the like is formed on the surface of the substrate heated to a predetermined temperature by the heating device 6.

このとき成膜チャンバー内は常圧であるため、成膜ガスと空気の比率を一定に保ちながら安定して原料ガスが基材表面に供給されるように前記ガス排気部８からの排ガス流を安定に調整する必要がある。そのため、前記ブロワー１０による排風圧力を一定に保ちながら、前記排気管路９ａにオリフィスを設けてオリフィスの入側と出側の圧力差を検出する
微差圧計ＭＧを配置するとともに、微差圧計ＭＧの上流側に希釈ガスを流入させる排ガス希釈管路９ｃを接続し、前記微差圧計ＭＧによる検出差圧が所定の目標値に維持されるように前記排ガス希釈管路９ｃからの希釈ガス流入量をフィードバック制御するガス流制御手段１１を設けてあり、前記ガス流量制御手段１１による制御出力が流量制御装置ＭＦＣに入力されて前記排ガス希釈管路９ｃからの希釈ガス流入量が調整されるように構成してある。このような構成により、微差圧計ＭＧにより検出される微差圧値の変動が極めて小さく、且つ、不安定であっても、微量の希釈ガス流入量を調整することにより原料ガスの流れを安定的に調整できるようになる。ここで、希釈ガスとしては、排気管路９ａ，９ｂへの原料ガスとの反応生成物の付着堆積を防止する観点から窒素ガスなどの不活性ガスを用いることが好ましい。 At this time, since the inside of the film forming chamber is at a normal pressure, the exhaust gas flow from the gas exhaust unit 8 is flown so that the source gas is stably supplied to the substrate surface while keeping the ratio of the film forming gas and air constant. It needs to be adjusted stably. Therefore, while maintaining the exhaust pressure by the blower 10 constant, an orifice is provided in the exhaust pipe 9a to dispose a fine differential pressure gauge MG for detecting the pressure difference between the inlet side and the outlet side of the orifice, and the fine differential pressure gauge. An exhaust gas dilution pipe 9c that allows dilution gas to flow into the upstream side of the MG is connected, and the dilution gas flows from the exhaust gas dilution pipe 9c so that the differential pressure detected by the micro differential pressure gauge MG is maintained at a predetermined target value. Gas flow control means 11 for feedback control of the amount is provided, and the control output from the gas flow rate control means 11 is input to the flow rate control device MFC so that the dilution gas inflow amount from the exhaust gas dilution pipe 9c is adjusted. It is configured. With such a configuration, even if the fluctuation of the fine differential pressure value detected by the fine differential pressure gauge MG is extremely small and unstable, the flow of the raw material gas can be stabilized by adjusting a small amount of diluted gas inflow. Can be adjusted. Here, as the dilution gas, it is preferable to use an inert gas such as nitrogen gas from the viewpoint of preventing the deposition of reaction products with the raw material gas on the exhaust pipes 9a and 9b.

上述した実施形態では、前記微差圧計ＭＧを排気管路９ａに配置するものを説明したが、排気管路９ｂに配置するものであってもよい。また、前記ガス流量制御手段１１を、排気管路や除害装置のフィルタなどの目詰まりによる圧損を検出してブロワー１０の排風圧力を調整するように構成してもよい。   In the above-described embodiment, the fine differential pressure gauge MG is disposed in the exhaust pipe line 9a. However, it may be disposed in the exhaust pipe line 9b. Further, the gas flow rate control means 11 may be configured to detect the pressure loss due to clogging of the exhaust pipe or the filter of the abatement apparatus and adjust the exhaust air pressure of the blower 10.

上述した実施形態では、ヘッドフレーム２４内に一組の放電電極２ａ，２ｂと、原料ガス供給部２１と、ガス排気部２２と、シールドガス供給部２３を備えてなる成膜ヘッド２を有するＣＶＤ装置を説明したが、成膜ヘッド２としてはこのような構成に限定されるものではなく、例えば、ヘッドフレーム２４内に複数組の放電電極２ａ，２ｂと、原料ガス供給部２１と、ガス排気部２２と、シールドガス供給部２３を備えて構成されるものであってもよい。   In the above-described embodiment, the CVD having the film forming head 2 including the pair of discharge electrodes 2 a and 2 b, the source gas supply unit 21, the gas exhaust unit 22, and the shield gas supply unit 23 in the head frame 24. Although the apparatus has been described, the film forming head 2 is not limited to such a configuration. For example, a plurality of sets of discharge electrodes 2 a and 2 b, a source gas supply unit 21, and gas exhaust are provided in the head frame 24. The unit 22 and the shield gas supply unit 23 may be provided.

上述した実施形態では、基材に原料ガスを供給して薄膜を成膜する原料ガス供給部と、前記原料ガス供給部に隣接して未反応の原料ガス及び反応生成物を排気するガス排気部を備えた成膜ヘッドを有する常圧ＣＶＤ装置について説明したが、本発明は、一対の放電電極２ａ，２ｂを備えた常圧プラズマＣＶＤ装置にも適用可能である。   In the above-described embodiment, a raw material gas supply unit that supplies a raw material gas to a substrate to form a thin film, and a gas exhaust unit that exhausts unreacted raw material gas and reaction products adjacent to the raw material gas supply unit Although the atmospheric pressure CVD apparatus having the film forming head provided with the above has been described, the present invention can also be applied to an atmospheric pressure plasma CVD apparatus including a pair of discharge electrodes 2a and 2b.

常圧ＣＶＤ装置の要部の斜視図Perspective view of main part of atmospheric pressure CVD equipment 図１におけるＡ−Ａ線断面図AA line sectional view in FIG.

符号の説明Explanation of symbols

１：常圧プラズマＣＶＤ装置
２：成膜ヘッド
３：トレイ
４：基材
５：基材搬送機構
６：加熱装置
９，９ａ，９ｂ：排気管路
９ｃ：排ガス希釈管路
１０：ブロワー
１１：ガス流制御手段
ＭＦＣ：流量制御装置
ＭＧ：微差圧計
1: atmospheric pressure plasma CVD apparatus 2: film forming head 3: tray 4: base material 5: base material transport mechanism 6: heating devices 9, 9a, 9b: exhaust pipe 9c: exhaust gas dilution pipe 10: blower 11: gas Flow control means MFC: flow rate control device MG: slight differential pressure gauge

Claims (2)

成膜チャンバーに、基材搬送機構により搬送された基材に原料ガスを供給して薄膜を成膜する原料ガス供給部と、前記原料ガス供給部に隣接して未反応の原料ガス及び反応生成物を排気するガス排気部を備えた成膜ヘッドを設け、前記ガス排気部からの排ガスを排気管路を介して外部に排気するブロワーを備えてなる常圧ＣＶＤ装置であって、
前記排気管路に、微差圧計を配置するとともに希釈ガスを流入させる排ガス希釈管路を接続し、前記微差圧計による検出差圧が所定の目標値に維持されるように前記排ガス希釈管路からの希釈ガス流入量をフィードバック制御するガス流制御手段を設けてある常圧ＣＶＤ装置。 A raw material gas supply unit for forming a thin film by supplying a raw material gas to the base material transported by the base material transport mechanism into the film forming chamber, and an unreacted raw material gas and reaction generation adjacent to the raw material gas supply unit An atmospheric pressure CVD apparatus provided with a film forming head provided with a gas exhaust part for exhausting an object, and provided with a blower for exhausting exhaust gas from the gas exhaust part to the outside through an exhaust pipe line,
A fine differential pressure gauge is disposed in the exhaust pipe and an exhaust gas dilution pipe through which dilution gas flows is connected, and the exhaust gas dilution pipe is maintained so that the differential pressure detected by the fine differential pressure gauge is maintained at a predetermined target value. An atmospheric pressure CVD apparatus provided with a gas flow control means for feedback control of the amount of diluted gas flowing in. 成膜チャンバーに、基材搬送機構により搬送された基材に原料ガスを供給して薄膜を成膜する原料ガス供給部と、前記原料ガス供給部に隣接して未反応の原料ガス及び反応生成物を排気するガス排気部を備えた成膜ヘッドを設け、前記ガス排気部からの排ガスを排気管路を介して外部に排気するブロワーを備え、前記ガス排気部からの排ガス流を制御することにより前記原料ガス供給部から前記基材への原料ガスの供給量を調整する常圧ＣＶＤ装置の排ガス流制御方法であって、
前記排気管路に配置された微差圧計による検出差圧が所定の目標値に維持されるように、前記排気管路に接続された排ガス希釈管路からの希釈ガス流入量をフィードバック制御する常圧ＣＶＤ装置の排ガス流制御方法。 A raw material gas supply unit for forming a thin film by supplying a raw material gas to the base material transported by the base material transport mechanism into the film forming chamber, and an unreacted raw material gas and reaction generation adjacent to the raw material gas supply unit A film forming head provided with a gas exhaust unit for exhausting an object, a blower for exhausting exhaust gas from the gas exhaust unit to the outside through an exhaust pipe, and controlling an exhaust gas flow from the gas exhaust unit An atmospheric pressure CVD apparatus exhaust gas flow control method for adjusting the supply amount of the raw material gas from the raw material gas supply unit to the substrate,
The dilution gas inflow from the exhaust gas dilution pipe connected to the exhaust pipe is normally feedback-controlled so that the differential pressure detected by the micro differential pressure gauge disposed in the exhaust pipe is maintained at a predetermined target value. Exhaust gas flow control method for pressure CVD equipment.
JP2003432901A 2003-12-26 2003-12-26 Atmospheric pressure cvd device and exhaust gas flow control method therefor Pending JP2005191391A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015204461A (en) * 2014-04-14 2015-11-16 アイクストロン、エスイー Device and method for exhaust gas purification in cvd reactor
KR101881289B1 (en) * 2018-06-12 2018-08-27 (주)코셉솔루션 exhaust gas dilution device
CN110277333A (en) * 2018-03-15 2019-09-24 株式会社斯库林集团 Substrate board treatment and substrate processing method using same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015204461A (en) * 2014-04-14 2015-11-16 アイクストロン、エスイー Device and method for exhaust gas purification in cvd reactor
CN110277333A (en) * 2018-03-15 2019-09-24 株式会社斯库林集团 Substrate board treatment and substrate processing method using same
CN110277333B (en) * 2018-03-15 2023-06-16 株式会社斯库林集团 Substrate processing apparatus and substrate processing method
KR101881289B1 (en) * 2018-06-12 2018-08-27 (주)코셉솔루션 exhaust gas dilution device

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