JP2005183443A - Printed circuit board comprising capacitor - Google Patents
Printed circuit board comprising capacitor Download PDFInfo
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- JP2005183443A JP2005183443A JP2003417972A JP2003417972A JP2005183443A JP 2005183443 A JP2005183443 A JP 2005183443A JP 2003417972 A JP2003417972 A JP 2003417972A JP 2003417972 A JP2003417972 A JP 2003417972A JP 2005183443 A JP2005183443 A JP 2005183443A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
- H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/08—Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/10—Multiple hybrid or EDL capacitors, e.g. arrays or modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/78—Cases; Housings; Encapsulations; Mountings
- H01G11/82—Fixing or assembling a capacitive element in a housing, e.g. mounting electrodes, current collectors or terminals in containers or encapsulations
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Abstract
Description
本発明は、大容量の電気を蓄えることが可能な、カーボンナノチューブを用いた電気二重層キャパシタ、および電気二重層キャパシタを組込んだ電子回路用プリント基板並びに同キャパシタ組込みプリント基板の製造方法に関するものである。 The present invention relates to an electric double layer capacitor using carbon nanotubes capable of storing a large amount of electricity, a printed circuit board for an electronic circuit incorporating the electric double layer capacitor, and a method of manufacturing the printed circuit board incorporating the capacitor. It is.
高速動作の電子回路素子(高速動作素子)で電子回路を構成するとき、プリント基板には高速動作に必要な大電流を高速動作素子に供給しなければならない。このため同素子の近くに蓄電用のキャパシタを配置する必要がある。 When an electronic circuit is constituted by a high-speed operation electronic circuit element (high-speed operation element), a large current necessary for high-speed operation must be supplied to the high-speed operation element. For this reason, it is necessary to arrange a capacitor for storing electricity near the element.
高速動作の電子回路をプリント基板で構成するとき、上記従来技術では必要な電流の供給を補うためにキャパシタを高速動作素子の近傍に配置すると共に、高速動作素子間の配線長を可能な限り短くすることが求められる。しかし、高速動作素子の近傍にキャパシタを設置するとその設置スペースが必要である上に配線長が長くなり、上記要望と矛盾することになる。さらに電源供給ラインのインピーダンスが高くなるためにEMI(Electro Magnetic Interference)などの電磁放射も問題となっている。 When a high-speed electronic circuit is configured with a printed circuit board, the above-described conventional technology places a capacitor in the vicinity of the high-speed operation element in order to compensate for the supply of necessary current, and shortens the wiring length between the high-speed operation elements as much as possible. It is required to do. However, if a capacitor is installed in the vicinity of the high-speed operation element, the installation space is required and the wiring length becomes long, which contradicts the above-mentioned demand. Furthermore, since the impedance of the power supply line is increased, electromagnetic radiation such as EMI (Electro Magnetic Interference) is also a problem.
本発明は、上記矛盾点を解決することを課題とする。 This invention makes it a subject to solve the said contradiction.
請求項1の発明は、片面に多数のカーボンナノチューブを有する一対の電極が、セパレータを介して、一方の電極のカーボンナノチューブ群と他方の電極のカーボンナノチューブ群が対向するように配置され、カーボンナノチューブ群に電解液が含浸されてなる、電気二重層キャパシタである。 According to the first aspect of the present invention, a pair of electrodes having a large number of carbon nanotubes on one side are disposed so that a carbon nanotube group of one electrode and a carbon nanotube group of the other electrode face each other with a separator interposed therebetween. This is an electric double layer capacitor in which a group is impregnated with an electrolytic solution.
請求項2の発明は、両面に多数のカーボンナノチューブを有する1枚の内部電極が、片面に多数のカーボンナノチューブを有する一対の側部電極で、セパレータを介してサンドイッチされ、一対の側部電極は、一方の側部電極のカーボンナノチューブ群と他方の側部電極のカーボンナノチューブ群が対向するように配置され、カーボンナノチューブ群に電解液が含浸されてなる、電気二重層キャパシタである。
In the invention of
請求項3の発明は、両面に多数のカーボンナノチューブを有する複数枚の内部電極がセパレータを介して多層状に配置され、この多層内部電極群が、片面に多数のカーボンナノチューブを有する一対の側部電極で、側部セパレータを介してサンドイッチされ、一対の側部電極は、一方の側部電極のカーボンナノチューブ群と他方の側部電極のカーボンナノチューブ群が対向するように配置され、カーボンナノチューブ群に電解液が含浸されてなる、電気二重層キャパシタである。
According to the invention of
請求項4の発明は、請求項1〜3のいずれかに記載の電気二重層キャパシタが、所定パターンで多数の透孔を有する絶縁板枠の各透孔に嵌込まれ、両側に回路層が積層されてなる、キャパシタ組込みプリント基板である。 According to a fourth aspect of the present invention, the electric double layer capacitor according to any one of the first to third aspects is fitted into each through hole of an insulating plate frame having a plurality of through holes in a predetermined pattern, and circuit layers are provided on both sides. This is a printed circuit board with a built-in capacitor.
請求項5の発明は、請求項1〜3のいずれかに記載の電気二重層キャパシタを、所定パターンで多数の透孔を有する未硬化絶縁板枠の各透孔に嵌込み、次いで同絶縁板枠を硬化させ、硬化絶縁板枠の両側に回路層を積層する、キャパシタ組込みプリント基板の製造方法である。 According to a fifth aspect of the present invention, the electric double layer capacitor according to any one of the first to third aspects is fitted into each through hole of an uncured insulating plate frame having a large number of through holes in a predetermined pattern, and then the same insulating plate. This is a method for manufacturing a capacitor-embedded printed circuit board in which a frame is cured and circuit layers are laminated on both sides of a cured insulating plate frame.
請求項6の発明は、請求項1〜3のいずれかに記載の電気二重層キャパシタを、所定パターンで多数の透孔を有する硬化絶縁板枠の各透孔に嵌込み、次いで、硬化絶縁板枠の両側に回路層を積層する、キャパシタ組込みプリント基板の製造方法である。 According to a sixth aspect of the present invention, the electric double layer capacitor according to any one of the first to third aspects is fitted into each through hole of a cured insulating plate frame having a plurality of through holes in a predetermined pattern, and then the cured insulating plate. This is a method for manufacturing a printed circuit board with a built-in capacitor, in which circuit layers are laminated on both sides of a frame.
請求項1〜3の電気二重層キャパシタは、いずれも小さな面積で大きなキャパシタ容量を示す。例えば請求項1の電気二重層キャパシタは1cm2当り3mFと大きなキャパシタ容量を示す。
The electric double layer capacitors according to
絶縁板枠は、炭素繊維、ガラス繊維等の強化繊維の織物に熱硬化樹脂を含浸させてなるシート、例えばプリプレグを硬化させて構成したものであってよい。絶縁板枠(10)に設けられる透孔(9) のパターンは、図13に示すように、通常は複数の透孔(9) が縦横に並んだ碁盤目である。複数の透孔(9) は絶縁板枠(10)の全体に亘って設けられても、図14に示すように、絶縁板枠(10)の必要部分に偏在して設けられてもよい。後者の場合、複数の透孔(9) に嵌込まれた電気二重層キャパシタ(8) をカバーして1つの高速動作素子(19)を配置することができる。 The insulating plate frame may be configured by curing a sheet, for example, a prepreg, obtained by impregnating a woven fabric of reinforcing fibers such as carbon fiber and glass fiber with a thermosetting resin. As shown in FIG. 13, the pattern of the through holes (9) provided in the insulating plate frame (10) is usually a grid with a plurality of through holes (9) arranged vertically and horizontally. The plurality of through holes (9) may be provided over the entire insulating plate frame (10) or may be provided unevenly at a necessary portion of the insulating plate frame (10) as shown in FIG. In the latter case, one high-speed operation element (19) can be arranged to cover the electric double layer capacitor (8) fitted in the plurality of through holes (9).
本発明において、基本になるキャパシタのサイズをプリント基板の配線ピッチに合うようにすることにより配線層とキャパシタ層を繋ぐスルーホールの配置を簡素化することができる。複数のキャパシタを直列または並列に接続することにより所望のキャパシタ容量を実現することができる。 In the present invention, the arrangement of the through holes connecting the wiring layer and the capacitor layer can be simplified by matching the basic capacitor size with the wiring pitch of the printed circuit board. A desired capacitor capacity can be realized by connecting a plurality of capacitors in series or in parallel.
カーボンナノチューブの構造は単層すなわち単一のチューブであってもよいし、多層すなわち同心状の複数の異径チューブであってもよい。カーボンナノチューブの直径は好ましくは1〜100nmである。 The structure of the carbon nanotube may be a single layer, that is, a single tube, or may be a multilayer, that is, a plurality of different diameter tubes that are concentric. The diameter of the carbon nanotube is preferably 1 to 100 nm.
カーボンナノチューブは、カーボン原子が網目状に結合してできた穴径ナノ(1ナノは10億分の1)メートルサイズの極微細な筒(チューブ)状の物質である。通常の電解液の電解質イオン直径は約0.4〜0.6nmであるので、穴径1〜2nmのカーボンナノチューブがイオンの吸脱着に好ましい。また、カーボンナノチューブを実質上垂直に配向させることでイオンの吸脱着がさらにスムーズとなり、放電電流が増加した場合でも容量の低下が少ないため、長時間の使用が可能となる。 A carbon nanotube is an extremely fine tube (tube) substance having a hole diameter of nanometers (one nano is one billionth of a meter) formed by bonding carbon atoms in a network. Since the electrolyte ion diameter of a normal electrolytic solution is about 0.4 to 0.6 nm, carbon nanotubes having a hole diameter of 1 to 2 nm are preferable for adsorption and desorption of ions. Further, by aligning the carbon nanotubes substantially vertically, ions can be absorbed and desorbed more smoothly, and even when the discharge current is increased, the capacity is hardly lowered, so that it can be used for a long time.
電極を構成するカーボンナノチューブは、公知の方法で作製できる。例えば、シリコン基板の少なくとも片面上にFe膜をフォトリソグラフィーでパターン化し、この面にアセチレン(C2H2)ガスを用いて一般的な化学蒸着法(CVD法)を施すことにより作製できる。この方法では、直径12〜38nmのカーボンナノチューブが多層構造で基板上に実質上垂直に起毛される。こうして成長させたカーボンナノチューブをシリコン基板から接着剤を施した集電体に転写し接着する。接着層は導電性ペーストからなるものであることが好ましい。集電体は、アルミニウムのような導電材からなる。 The carbon nanotube constituting the electrode can be produced by a known method. For example, it can be produced by patterning an Fe film on at least one surface of a silicon substrate by photolithography and applying a general chemical vapor deposition method (CVD method) using acetylene (C 2 H 2 ) gas on this surface. In this method, carbon nanotubes having a diameter of 12 to 38 nm are raised in a multilayer structure substantially vertically on a substrate. The carbon nanotubes thus grown are transferred from a silicon substrate to a current collector provided with an adhesive and bonded. The adhesive layer is preferably made of a conductive paste. The current collector is made of a conductive material such as aluminum.
電気二重層キャパシタの電解液は、プロピレンカーボネート、1−ブチレンカーボネート、スルホラン、アセトニトリル、γ−ブチルラクトン、ジメチルホルムアミドなどの非プロトン性溶媒に、テトラエチルアンモニウムテトラフルオロボレートやテトラエチルアンモニウムヘキサフルオロホスファート、テトラブチルアンモニウム過塩素酸塩などの有機溶質、または、リチウム、第4級ホスホニウム等のカチオンとBF4 −、PF6 −、ClO4 −、CF2SO2 −などのアニオンからなる無機溶質を溶解したものや、ランタノイド元素の塩等を含む希硫酸などの水溶液系電解液、またはこれらに高分子物質を加えたポリマー型電解液などを使用することができる。 The electrolytic solution of the electric double layer capacitor is composed of an aprotic solvent such as propylene carbonate, 1-butylene carbonate, sulfolane, acetonitrile, γ-butyllactone, dimethylformamide, tetraethylammonium tetrafluoroborate, tetraethylammonium hexafluorophosphate, tetra An organic solute such as butylammonium perchlorate or an inorganic solute composed of a cation such as lithium or quaternary phosphonium and an anion such as BF 4 − , PF 6 − , ClO 4 − or CF 2 SO 2 − was dissolved. Or an aqueous electrolyte solution such as dilute sulfuric acid containing a salt of a lanthanoid element, or a polymer electrolyte solution obtained by adding a polymer substance to these.
本発明によれば、電気二重層キャパシタは、所定パターンで多数の透孔を有する絶縁板枠の各透孔に組み込まれているので、高速動作素子の近傍でこれを必要な容量のキャパシタと繋ぐことができる。したがって、キャパシタ設置のための特別なスペースは必要でなく、高速動作素子間の長い接続配線も必要でない。 According to the present invention, since the electric double layer capacitor is incorporated in each through hole of the insulating plate frame having a large number of through holes in a predetermined pattern, the electric double layer capacitor is connected to a capacitor having a necessary capacity in the vicinity of the high speed operation element. be able to. Therefore, a special space for installing the capacitor is not necessary, and a long connection wiring between the high-speed operation elements is not necessary.
つぎに、本発明を実施例に基づいて具体的に説明する。 Next, the present invention will be specifically described based on examples.
実施例1
請求項1の電気二重層キャパシタを示す図1において、容器(21)内にて、片面に多数のカーボンナノチューブを有する一対の電極(24)(25)が、セパレータ(26)を介して、一方の電極(24)のカーボンナノチューブ(22)と他方の電極(25)のカーボンナノチューブ(23)が対向するように配置されている。容器(21)内に電解液が注入され、カーボンナノチューブ(22)(23)に含浸されている。この電気二重層キャパシタは1cm2当り3mFと大きなキャパシタ容量を示す。
Example 1
In FIG. 1 showing the electric double layer capacitor according to
実施例2
請求項2の電気二重層キャパシタを示す図2において、容器(21)内にて、両面に多数のカーボンナノチューブ(27)を有する1枚の内部電極(28)が、片面に多数のカーボンナノチューブを有する一対の側部電極(24)(25)で、セパレータ(26)を介してサンドイッチされている。一対の側部電極(24)(25)は、一方の側部電極(24)のカーボンナノチューブ(22)と他方の側部電極(25)のカーボンナノチューブ(23)が対向するように配置されている。容器(21)内に電解液が注入され、カーボンナノチューブ(22)(23)(27)に含浸されている。
Example 2
In FIG. 2 which shows the electric double layer capacitor of
実施例3
請求項3の電気二重層キャパシタを示す図3において、容器(21)内にて、両面に多数のカーボンナノチューブ(27)を有する複数枚の内部電極(29)が内部セパレータ(26)を介して多層状に配置され、こうして構成された多層内部電極群(30)が、片面に多数のカーボンナノチューブを有する一対の側部電極(24)(25)で、セパレータ(26)を介してサンドイッチされている。一対の側部電極(24)(25)は、一方の側部電極(24)のカーボンナノチューブ(22)と他方の側部電極(25)のカーボンナノチューブ(23)が対向するように配置されている。容器(21)内に電解液が注入され、カーボンナノチューブ(22)(23)(27)に含浸されている。
Example 3
In FIG. 3 showing the electric double layer capacitor according to
実施例4
第1工程
図4において、10mm×10mm×0.5mm厚の低抵抗N型半導体シリコン基板の片面にフォトリソグラフィーでFe膜をパターン化した後、アセチレンを流量30ml/min、温度700℃で15分流して化学蒸着法により基板上に無数のカーボンナノチューブをブラシ状に成長させた。得られたカーボンナノチューブは多層構造であり、直径は12nmで、長さは50μmであった。
Example 4
First Step In FIG. 4, after patterning an Fe film by photolithography on one side of a low resistance N-type semiconductor silicon substrate having a thickness of 10 mm × 10 mm × 0.5 mm, acetylene was flowed at a flow rate of 30 ml / min and a temperature of 700 ° C. for 15 minutes. An infinite number of carbon nanotubes were grown in a brush shape on the substrate by chemical vapor deposition. The obtained carbon nanotubes had a multi-layer structure, a diameter of 12 nm, and a length of 50 μm.
こうして成長させたカーボンナノチューブをシリコン基板から、表面に導電性ペーストからなる接着層を施したアルミニウム薄板からなる集電体上に150℃/49Ncm2で加熱・加圧することで転写した。こうして片面に多数のカーボンナノチューブ(3) (4) を有する一対の電極(1) (2) を得た。 The carbon nanotubes thus grown were transferred from a silicon substrate by heating and pressurizing at 150 ° C./49 Ncm 2 onto a current collector made of an aluminum thin plate having an adhesive layer made of a conductive paste on the surface. Thus, a pair of electrodes (1) (2) having a large number of carbon nanotubes (3) (4) on one side was obtained.
第2工程
図5において、容器(6) 内で、露点下(温度−60℃、水分なし)の窒素雰囲気で、片面に多数のカーボンナノチューブを有する一対の電極(1) (2) を、セパレータ(5) を介して、一方の電極(1) のカーボンナノチューブ(3) と他方の電極(2) のカーボンナノチューブ(4) が対向するように配置し、サンドイッチ体(17)を作製した。その後、150〜200℃で24時間乾燥を行った。
Second Step In FIG. 5, a pair of electrodes (1) (2) having a number of carbon nanotubes on one side in a nitrogen atmosphere at a dew point (temperature −60 ° C., no moisture) in a container (6) Via (5), the carbon nanotube (3) of one electrode (1) and the carbon nanotube (4) of the other electrode (2) were arranged to face each other, and a sandwich body (17) was produced. Then, it dried at 150-200 degreeC for 24 hours.
第3工程
同じく図5において、乾燥窒素雰囲気下にグローブボックス内で電解液(テトラエチルアンモニウムテトラフルオロボレートのプロピレンカーボネート溶液(濃度=1mol/l))を容器(6) 内に注入し、カーボンナノチューブ(3) (4) に含浸させた。電解液の量は1cm2当たり1〜3ccとした。
その後、ポリプロピレン製ガスケットを用いて容器(6) の口部をステンレス鋼製の蓋材(7) でかしめ封口した。こうして、上側電極(1) が陽極で下側電極(2) が陰極である電気二重層キャパシタ(8) を作製した。 Thereafter, the mouth of the container (6) was caulked with a stainless steel lid (7) using a polypropylene gasket. Thus, an electric double layer capacitor (8) in which the upper electrode (1) was an anode and the lower electrode (2) was a cathode was produced.
第4工程
図6に示すように、複数の長方形の透孔(9) を有する未硬化絶縁板枠(10)を用意した。未硬化絶縁板枠(10)はプリプレグで構成されたものである。透孔(9) は、図13に示すように、複数の透孔(9) は縦横に並んだ碁盤目状のパターンをなす。
Fourth Step As shown in FIG. 6, an uncured insulating plate frame (10) having a plurality of rectangular through holes (9) was prepared. The uncured insulating plate frame (10) is composed of a prepreg. As shown in FIG. 13, the through holes (9) have a grid pattern in which the plurality of through holes (9) are arranged vertically and horizontally.
未硬化絶縁板枠(10)の各透孔(9) に前工程で得られた電気二重層キャパシタ(8) を嵌込んだ。こうしてキャパシタ組込み未硬化絶縁板枠(10)を作製した。未硬化絶縁板枠(10)の厚さは電気二重層キャパシタ(8) の厚さと同じであり、したがってキャパシタ組込み未硬化絶縁板枠(11)の両側面はそれぞれ面一となった。 The electric double layer capacitor (8) obtained in the previous step was fitted into each through hole (9) of the uncured insulating plate frame (10). In this way, an uncured insulating frame (10) with a built-in capacitor was produced. The thickness of the uncured insulating board frame (10) was the same as the thickness of the electric double layer capacitor (8). Therefore, both side surfaces of the capacitor built-in uncured insulating board frame (11) were flush with each other.
第5工程
同じく図6において、キャパシタ組込み絶縁板枠(11)の両側に、アルミニウムまたは銅製の回路(13)を有する回路層(12)を積層し、上側回路層(12)の上に電子部品設置層(14)を積層した。
第6工程
その後、図7に示すように、未硬化絶縁板枠(10)を構成するプリプレグを熱硬化させ、電気二重層キャパシタ(8) を硬化絶縁板枠(10)に固定し、キャパシタ組込み絶縁板枠(11)を得た。
Step 6 After that, as shown in FIG. 7, the prepreg constituting the uncured insulating plate frame (10) is thermally cured, and the electric double layer capacitor (8) is fixed to the cured insulating plate frame (10), and the capacitor is incorporated. An insulating plate frame (11) was obtained.
第7工程
図8に示すように、キャパシタ組込み絶縁板枠(11)、回路層(12)および電子部品設置層(14)を貫通して所要位置で回路(13)に接続するスルーホール(15)を開けた。こうしてキャパシタ組込みプリント基板(16)を作製した。電子部品設置層(14)の上に高速動作素子が配置されスルーホール(15)に接続される。
Seventh Step As shown in FIG. 8, through holes (15) that penetrate through the capacitor built-in insulating plate frame (11), the circuit layer (12), and the electronic component installation layer (14) and connect to the circuit (13) at a required position. ) Was opened. Thus, a capacitor-embedded printed circuit board (16) was produced. A high-speed operation element is disposed on the electronic component installation layer (14) and connected to the through hole (15).
なお、硬化絶縁板枠(10)と回路層(12)の接着強度を上げるために、硬化絶縁板枠(10)と回路層(12)の間に絶縁板を介在させ、回路(13)と電気二重層キャパシタ(8) を接続する構成としてもよい。 In order to increase the adhesive strength between the cured insulating frame (10) and the circuit layer (12), an insulating plate is interposed between the cured insulating frame (10) and the circuit layer (12), and the circuit (13) An electric double layer capacitor (8) may be connected.
実施例5
第1工程
実施例4の第1工程と同じ操作により片面に多数のカーボンナノチューブを有する一対の電極(1) (2) を得た。
Example 5
First Step By the same operation as in the first step of Example 4, a pair of electrodes (1) (2) having a large number of carbon nanotubes on one side was obtained.
第2工程
実施例4の第2工程と同じ操作によりサンドイッチ(17)を得た。これを図9に示す。
Second Step A sandwich (17) was obtained by the same operation as in the second step of Example 4. This is shown in FIG.
第3工程
図13に示すように、多数の長方形の透孔(1) を有する硬化絶縁板枠(20)を用意した。硬化絶縁板枠(20)はプリプレグを硬化させて構成したものであり、複数1の透孔(9) は縦横に並んだ碁盤目状のパターンをなす。
Third Step As shown in FIG. 13, a cured insulating plate frame (20) having a number of rectangular through holes (1) was prepared. The cured insulating plate frame (20) is formed by curing a prepreg, and the plurality of through holes (9) form a grid pattern arranged vertically and horizontally.
図10において、硬化絶縁板枠(20)の各透孔(9) に前工程で得られたサンドイッチ(17)を嵌込んで、キャパシタ組込み硬化絶縁板枠(18)を作製した。硬化絶縁板枠(20)の厚さはサンドイッチ(17)の厚さと同じであり、したがってキャパシタ組込み絶縁板枠(18)の両側面はそれぞれ面一となった。 In FIG. 10, the sandwich (17) obtained in the previous step was fitted into each through hole (9) of the cured insulating plate frame (20) to produce a capacitor built-in cured insulating plate frame (18). The thickness of the cured insulating plate frame (20) was the same as that of the sandwich (17), and therefore both side surfaces of the capacitor built-in insulating plate frame (18) were flush with each other.
第4工程
図11に示すように、キャパシタ組込み絶縁板枠(18)の両側に、アルミニウムまたは銅製の回路(13)を内装した回路層(12)を積層し、上側回路層(12)の上に電子部品設置層(14)を積層し、さらに、乾燥窒素雰囲気下に実施例1と同じ構成の電解液を各透孔(9) 内に注入し、カーボンナノチューブに含浸させた。電解液の量は1cm2当たり1〜3ccとした。
Fourth Step As shown in FIG. 11, a circuit layer (12) with an aluminum or copper circuit (13) is laminated on both sides of the capacitor-embedded insulating plate frame (18), and the upper circuit layer (12) is formed. Then, an electronic component installation layer (14) was laminated, and an electrolytic solution having the same structure as in Example 1 was injected into each through-hole (9) in a dry nitrogen atmosphere to impregnate the carbon nanotubes. The amount of the electrolyte was 1 to 3 cc per 1 cm 2 .
第5工程
図12に示すように、実施例4の第7工程と同じ操作によりキャパシタ組込みプリント基板(16)を作製した。
Fifth Step As shown in FIG. 12, a capacitor-embedded printed circuit board (16) was produced by the same operation as in the seventh step of Example 4.
(1) (2) (24)(25):電極
(3) (4) (22)(23)(27):カーボンナノチューブ
(5) (26):セパレータ
(6) (21):容器
(7) :蓋材
(8) :電気二重層キャパシタ
(9) :透孔
(10):未硬化絶縁板枠
(11):キャパシタ組込み未硬化絶縁板枠
(12):回路層
(13):回路
(14):電子部品設置層
(15):スルーホール
(16):プリント基板
(17):サンドイッチ体
(18):キャパシタ組込み硬化絶縁板枠
(19):高速動作素子^
(20):硬化絶縁板枠
(28)(29):内部電極
(30):多層内部電極群
(1) (2) (24) (25): Electrode
(3) (4) (22) (23) (27): Carbon nanotube
(5) (26): Separator
(6) (21): Container
(7): Cover material
(8): Electric double layer capacitor
(9): Through hole
(10): Uncured insulating frame
(11): Uncured insulating frame with built-in capacitor
(12): Circuit layer
(13): Circuit
(14): Electronic component installation layer
(15): Through hole
(16): Printed circuit board
(17): Sandwich body
(18): Hardened insulation board frame with built-in capacitor
(19): High-speed operation element
(20): Hardened insulation board frame
(28) (29): Internal electrode
(30): Multilayer internal electrode group
Claims (6)
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JP2003417972A JP2005183443A (en) | 2003-12-16 | 2003-12-16 | Printed circuit board comprising capacitor |
PCT/JP2004/018107 WO2005059934A1 (en) | 2003-12-16 | 2004-11-30 | Printed board with built-in capacitor |
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JP2003417972A JP2005183443A (en) | 2003-12-16 | 2003-12-16 | Printed circuit board comprising capacitor |
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JP2007048907A (en) * | 2005-08-09 | 2007-02-22 | National Institute For Materials Science | Electric double layer capacitor electrode and capacitor using same |
KR100714275B1 (en) | 2005-08-12 | 2007-05-04 | 한국과학기술연구원 | Embedded capacitor |
JP2009267340A (en) * | 2008-03-31 | 2009-11-12 | Nippon Chemicon Corp | Electrode for electric double layer capacitor and method for manufacturing the same |
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