JP2005183417A - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- JP2005183417A JP2005183417A JP2003417508A JP2003417508A JP2005183417A JP 2005183417 A JP2005183417 A JP 2005183417A JP 2003417508 A JP2003417508 A JP 2003417508A JP 2003417508 A JP2003417508 A JP 2003417508A JP 2005183417 A JP2005183417 A JP 2005183417A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 229920005989 resin Polymers 0.000 claims abstract description 58
- 239000011347 resin Substances 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 5
- 238000010008 shearing Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 31
- 230000020169 heat generation Effects 0.000 abstract description 11
- 239000003822 epoxy resin Substances 0.000 abstract description 8
- 229920000647 polyepoxide Polymers 0.000 abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052802 copper Inorganic materials 0.000 abstract description 6
- 239000010949 copper Substances 0.000 abstract description 6
- 239000004411 aluminium Substances 0.000 abstract 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- 238000004873 anchoring Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
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- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Abstract
【解決手段】銅材等からなるリードフレームは、主回路を外部に導出する端子1aを備えている。端子1aは、内部配線用のアルミワイヤ2aを介して、フリーホイールダイオード6にボンディングポイント7aでボンディングされている。フリーホイールダイオード6は、ヒートシンク4に接触した状態で、エポキシ樹脂等からなるモールド樹脂3によりトランスファーモールドされている。アルミワイヤ2aの外側の端子1a上の領域では、モールド樹脂3の左右の端面と平行に、アンカー用の複数のアルミワイヤ2bが、ボンディングポイント7bでステッチボンディングされている。このアルミワイヤ2bは、アルミワイヤ2aと同様に、ある程度撓ませた状態でモールド樹脂3によりトランスファーモールドされている。
【選択図】図1
Description
実施の形態1に係る電力用半導体装置は、従来のアンカー穴に代えて、アンカー材としてのボンディングワイヤを用いてアンカー効果を発生させることを特徴とする。
実施の形態1に係る電力用半導体装置においては、リードフレームの端子1a上にアルミワイヤ2bをステッチボンディングすることにより、アンカー効果を発生させる。
実施の形態2に係る電力用半導体装置においては、リードフレームの端子1a上に、金属板材8を超音波接合することにより、アンカー効果を発生させる。
実施の形態3に係る電力用半導体装置においては、リードフレームの端子1aの周囲に接着剤9を環状に塗布することにより、アンカー効果を発生させる。
Claims (11)
- 半導体チップと、
リードフレームと、
前記半導体チップ及び前記リードフレームをボンディングする第一ワイヤと、
前記半導体チップ及び前記リードフレームを封止するモールド樹脂と、
前記リードフレーム表面に配置され前記リードフレームと前記モールド樹脂との間のアンカーとして機能するアンカー材と、
を備える電力用半導体装置。 - 請求項1に記載の電力用半導体装置であって、
前記アンカー材は、
前記リードフレーム表面において前記第一ワイヤがボンディングされるボンディングポイント付近に配置される
電力用半導体装置。 - 請求項1又は請求項2に記載の電力用半導体装置であって、
前記アンカー材は、
前記リードフレーム上面にステッチボンディングされた第二ワイヤ
を含む電力用半導体装置。 - 請求項3に記載の電力用半導体装置であって、
前記第二ワイヤは前記リードフレーム上に千鳥状に配置されたボンディングポイントにおいて複数本ステッチボンディングされる
電力用半導体装置。 - 請求項1又は請求項2に記載の電力用半導体装置であって、
前記アンカー材は、
前記リードフレーム上面に超音波接合された金属板
を含む電力用半導体装置。 - 請求項5に記載の電力用半導体装置であって、
前記金属板は前記リードフレームよりも広い幅を有する
電力用半導体装置。 - 請求項1又は請求項2に記載の電力用半導体装置であって、
前記アンカー材は、
前記リードフレーム上面に塗布された接着剤
を含む電力用半導体装置。 - 請求項7に記載の電力用半導体装置であって、
前記接着剤は前記リードフレームの側面および裏面にも塗布される
電力用半導体装置。 - 半導体チップと、
リードフレームと、
前記半導体チップ及び前記リードフレームをボンディングする第一ワイヤと、
前記半導体チップ及び前記リードフレームを封止するモールド樹脂と、
電流経路に平行な方向への剪断加工及び絞り加工により前記リードフレーム上に形成されたプレス加工領域と、
を備える電力用半導体装置。 - 請求項9に記載の電力用半導体装置であって、
前記プレス加工領域は、
前記リードフレーム表面において前記第一ワイヤがボンディングされるボンディングポイント付近に配置される
電力用半導体装置。 - 請求項10に記載の電力用半導体装置であって、
前記プレス加工領域は複数個形成される
電力用半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003417508A JP4030956B2 (ja) | 2003-12-16 | 2003-12-16 | 電力用半導体装置 |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003417508A JP4030956B2 (ja) | 2003-12-16 | 2003-12-16 | 電力用半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2005183417A true JP2005183417A (ja) | 2005-07-07 |
JP4030956B2 JP4030956B2 (ja) | 2008-01-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003417508A Expired - Lifetime JP4030956B2 (ja) | 2003-12-16 | 2003-12-16 | 電力用半導体装置 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009038145A (ja) * | 2007-07-31 | 2009-02-19 | Toshiba Components Co Ltd | リード端子型半導体装置 |
JP2012023233A (ja) * | 2010-07-15 | 2012-02-02 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
JP2014120679A (ja) * | 2012-12-18 | 2014-06-30 | Denso Corp | 半導体装置 |
JP2014139968A (ja) * | 2013-01-21 | 2014-07-31 | Toyota Motor Corp | 半導体装置およびその製造方法 |
JP2014203861A (ja) * | 2013-04-02 | 2014-10-27 | 三菱電機株式会社 | 半導体装置および半導体モジュール |
EP2765600A4 (en) * | 2011-09-30 | 2015-06-10 | Rohm Co Ltd | SEMICONDUCTOR COMPONENT |
US9824950B2 (en) | 2012-12-19 | 2017-11-21 | Fuji Electric Co., Ltd. | Semiconductor device |
-
2003
- 2003-12-16 JP JP2003417508A patent/JP4030956B2/ja not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009038145A (ja) * | 2007-07-31 | 2009-02-19 | Toshiba Components Co Ltd | リード端子型半導体装置 |
JP2012023233A (ja) * | 2010-07-15 | 2012-02-02 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
EP2765600A4 (en) * | 2011-09-30 | 2015-06-10 | Rohm Co Ltd | SEMICONDUCTOR COMPONENT |
US9099331B2 (en) | 2011-09-30 | 2015-08-04 | Rohm Co., Ltd. | Semiconductor device |
JP2014120679A (ja) * | 2012-12-18 | 2014-06-30 | Denso Corp | 半導体装置 |
US9824950B2 (en) | 2012-12-19 | 2017-11-21 | Fuji Electric Co., Ltd. | Semiconductor device |
JP2014139968A (ja) * | 2013-01-21 | 2014-07-31 | Toyota Motor Corp | 半導体装置およびその製造方法 |
US9035438B2 (en) | 2013-01-21 | 2015-05-19 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
JP2014203861A (ja) * | 2013-04-02 | 2014-10-27 | 三菱電機株式会社 | 半導体装置および半導体モジュール |
US9613888B2 (en) | 2013-04-02 | 2017-04-04 | Mitsubishi Electric Corporation | Semiconductor device and semiconductor module |
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Publication number | Publication date |
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JP4030956B2 (ja) | 2008-01-09 |
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