JP2005181794A - Liquid crystal display device and method for manufacturing liquid crystal display device - Google Patents

Liquid crystal display device and method for manufacturing liquid crystal display device Download PDF

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JP2005181794A
JP2005181794A JP2003424260A JP2003424260A JP2005181794A JP 2005181794 A JP2005181794 A JP 2005181794A JP 2003424260 A JP2003424260 A JP 2003424260A JP 2003424260 A JP2003424260 A JP 2003424260A JP 2005181794 A JP2005181794 A JP 2005181794A
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liquid crystal
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crystal display
alignment film
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JP4556426B2 (en
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Hisashi Kadota
久志 門田
Hitoshi Inukai
仁 犬飼
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Sony Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal display device in which defective alignment of liquid crystal molecules in the vicinity of a projecting and recessing part of a base layer of an alignment layer is more certainly prevented and thereby a bright defect is prevented, and of which the display characteristics are extremely excellent. <P>SOLUTION: In the liquid crystal display device comprising a driving substrate 1 and a counter substrate 2 placed opposite to each other wherein alignment layers 18, 23 respectively disposed on them are made to be on the inside and a liquid crystal layer 3 is disposed between them, at least the driving substrate 1 side alignment layer 18 has a laminated structure of a first layer 18a formed with oblique vapor deposition and a second layer 18b formed with oblique vapor deposition from an azimuth direction forming nearly 180° angle based on the first layer 18a. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は液晶表示装置およびその製造方法に関し、特には斜方蒸着された配向膜を有する液晶表示装置およびその製造方法に関する。   The present invention relates to a liquid crystal display device and a manufacturing method thereof, and more particularly to a liquid crystal display device having an obliquely deposited alignment film and a manufacturing method thereof.

プロジェクタ用の液晶表示装置（いわゆる液晶プロジェクタ）において、ライトバルブとして用いられている液晶パネルは、配線の微細化によるパネルサイズの小型化が進展している。一方、プロジェクタに使用される光源の光強度は増加の一途を辿っている。このため、小型化した液晶パネルに対する単位面積当たりの入射光量が飛躍的に増加している。そこで、このような液晶プロジェクタ用の液晶パネルにおいては、耐光性に劣る有機材料に換えて、酸化シリコン等の無機材料からなる配向膜（無機配向膜）を用いる構成が提案されている。無機材料からなる配向膜の形成においては、従来の有機材料からなる配向膜の形成に適用されているラビング法では十分な配向力が得られないため、基板（パネル面）の法線から角度をつけた蒸着方法（いわゆる斜方蒸着方法）が行われている。   In a liquid crystal display device for a projector (so-called liquid crystal projector), a liquid crystal panel used as a light valve has been reduced in size due to miniaturization of wiring. On the other hand, the light intensity of a light source used in a projector is constantly increasing. For this reason, the amount of incident light per unit area for a miniaturized liquid crystal panel has been dramatically increased. Therefore, in such a liquid crystal panel for a liquid crystal projector, a configuration is proposed in which an alignment film (inorganic alignment film) made of an inorganic material such as silicon oxide is used instead of an organic material having poor light resistance. In the formation of an alignment film made of an inorganic material, the rubbing method applied to the formation of an alignment film made of a conventional organic material cannot obtain a sufficient alignment force. The attached vapor deposition method (so-called oblique vapor deposition method) is performed.

ところで、上記配向膜が形成される基板のうち、特に駆動基板の表面には、画素電極やこれを駆動するスイッチング素子等による凹凸が存在している。また、液晶層の距離を規制するための柱状スペーサが形成されている側の基板表面は、最も大きな凸部が存在している。このため上述した斜方蒸着においては、蒸着方向に対して凹凸の陰になる部分は、無機材料が蒸着されない、あるいは蒸着されにくい部分となるため、蒸着ムラが生じる。そして、このような蒸着ムラが生じた部分のいては、液晶の配向が乱れ、光りぬけ等が起こり表示特性を悪化させるという問題があった。   By the way, among the substrates on which the alignment film is formed, there are irregularities due to pixel electrodes and switching elements for driving the pixel electrodes, particularly on the surface of the driving substrate. Moreover, the largest convex part exists in the board | substrate surface by which the columnar spacer for controlling the distance of a liquid-crystal layer is formed. For this reason, in the oblique vapor deposition described above, a portion that is shaded by unevenness with respect to the vapor deposition direction is a portion where the inorganic material is not vapor deposited or is difficult to vapor deposit. And in the part where such vapor deposition unevenness has occurred, there is a problem that the alignment of the liquid crystal is disturbed, and the display characteristics are deteriorated due to the occurrence of light penetration.

そこで、略９０°の異なる方位角方向から複数回の斜方蒸着を行うことにより、陰になる分部にも無機材料を蒸着させる方法が提案されている（下記特許文献１参照）。   In view of this, a method has been proposed in which an inorganic material is deposited on a shadow portion by performing oblique deposition several times from different azimuth directions of approximately 90 ° (see Patent Document 1 below).

特開２００２−２７７８７９号公報（特に、段落００２４参照）JP 2002-277879 A (refer to paragraph 0024 in particular)

しかしながら、上述したような略９０°の異なる方位角方向からの斜方蒸着では、１回目の斜方蒸着において陰となった部分に、２回目の斜方蒸着において十分に無機材料を蒸着することができるものの、２回目の斜方蒸着において陰となった部分では、１回目の斜方蒸着で形成された蒸着膜部分の影響を完全に排除することが困難である。したがって、２回目の斜方蒸着において陰になる部分においては、１回目の蒸着膜分部の影響によって液晶分子の配向の乱れが生じ易い。   However, in the oblique deposition from different azimuth directions of approximately 90 ° as described above, the inorganic material is sufficiently deposited in the second oblique deposition on the shadowed portion in the first oblique deposition. However, it is difficult to completely eliminate the influence of the deposited film portion formed by the first oblique deposition in the shaded portion in the second oblique deposition. Accordingly, in the portion that is shaded in the second oblique deposition, the orientation of the liquid crystal molecules is likely to be disturbed by the influence of the first deposited film portion.

そこで本発明は、配向膜の下地層の凹凸部近傍においての液晶分子の配向不良をより確実に防止することが可能で、これにより表示特性が極めて良好な液晶表示装置を提供すること、およびこのような液晶表示装置の製造方法を提供することを目的とする。   Therefore, the present invention can more reliably prevent liquid crystal molecule alignment defects in the vicinity of the concavo-convex portion of the underlayer of the alignment film, thereby providing a liquid crystal display device with extremely good display characteristics, and this An object of the present invention is to provide a method for manufacturing such a liquid crystal display device.

このような目的を達成するための本発明の液晶表示装置は、それぞれに設けられた配向膜を内側にして対向配置された一対の基板と、当該一対の基板間に狭持された液晶層とを備えた液晶表示装置において、配向膜の少なくとも一方が積層構造であることを特徴としている。この積層構造は、斜方蒸着によって形成された第１層と、当該第１層に対して略１８０°をなす方位角方向からの斜方蒸着によって形成された第２層とからなる。   In order to achieve such an object, a liquid crystal display device of the present invention includes a pair of substrates opposed to each other with an alignment film provided inside, a liquid crystal layer sandwiched between the pair of substrates, In the liquid crystal display device including the above, at least one of the alignment films has a stacked structure. This laminated structure is composed of a first layer formed by oblique vapor deposition and a second layer formed by oblique vapor deposition from an azimuth angle direction of approximately 180 ° with respect to the first layer.

また、本発明は、このような液晶表示装置の製造方法でもあり、上述した積層構造の配向膜の形成においては、斜方蒸着によって第１層を形成する工程と、前記第１層の斜方蒸着に対して略１８０°をなす方位角方向からの斜方蒸着によって当該第１層上に第２層を形成する工程とを行うことを特徴としている。   The present invention is also a method for manufacturing such a liquid crystal display device. In the formation of the alignment film having the above-described laminated structure, the step of forming the first layer by oblique vapor deposition, and the oblique formation of the first layer are performed. And a step of forming a second layer on the first layer by oblique vapor deposition from an azimuth angle direction of approximately 180 ° with respect to the vapor deposition.

このような構成の液晶表示装置では、第１層とその上層の第２層とが、１８０°をなす方位角方向からの斜方蒸着によって形成されている。このため、第１層と第２層とは、互いに１８０°をなす方位角方向に所定のプレチルト角で液晶分子を配向させる表面形状を有することになる。ここで、配向膜の下地が凹凸を有している場合、第２層を形成する際の斜方蒸着において陰となり十分な蒸着がなされない第２層の蒸着ムラ部分が生じる。このような第２層の蒸着ムラ部分では、第１層の表面形状が液晶分子の配向に対して影響を及ぼし易くなる。このため、第２層が十分に成膜されている部分の液晶分子の配向に対して、第２層の蒸着ムラ部分における液晶分子の配向は１８０°をなす方位角方向となり易い。しかしながら、周囲の配向方向に対して１８０°の方位角方向に保たれた液晶分子は、他の方位角方向に配向した液晶分子と比較して、その配向状態が周囲の液晶分子の配向状態に揃い易い。特に、配向膜が液晶分子を略垂直のプレチルト角で配向させる構成である場合にこのような傾向が顕著に見られる。このため、上述したような積層構造の配向膜においては、下地の凹凸に影響されることなく、第２層の全面（すなわち配向膜の全面）において液晶分子の配向が揃いやすくなる。   In the liquid crystal display device having such a configuration, the first layer and the second layer above the first layer are formed by oblique vapor deposition from the azimuth direction forming 180 °. For this reason, the first layer and the second layer have a surface shape in which liquid crystal molecules are aligned at a predetermined pretilt angle in an azimuth angle direction of 180 °. Here, when the underlayer of the alignment film has irregularities, the uneven deposition portion of the second layer which is shaded in the oblique deposition when forming the second layer and is not sufficiently deposited occurs. In such an uneven deposition portion of the second layer, the surface shape of the first layer tends to affect the alignment of the liquid crystal molecules. For this reason, the orientation of the liquid crystal molecules in the uneven deposition portion of the second layer tends to be in the azimuth direction of 180 ° with respect to the orientation of the liquid crystal molecules in the portion where the second layer is sufficiently formed. However, the liquid crystal molecules maintained in the azimuth angle direction of 180 ° with respect to the surrounding orientation direction are in the alignment state of the surrounding liquid crystal molecules as compared with the liquid crystal molecules oriented in other azimuth directions. Easy to align. Such a tendency is particularly noticeable when the alignment film has a configuration in which liquid crystal molecules are aligned at a substantially vertical pretilt angle. For this reason, in the alignment film having the laminated structure as described above, the alignment of the liquid crystal molecules is easily aligned on the entire surface of the second layer (that is, the entire surface of the alignment film) without being affected by the unevenness of the base.

以上説明したように、本発明の液晶表示装置およびその製造方法によれば、下地の凹凸に影響されること無く配向膜の全面において液晶分子の配向を揃い易くすることができるため、液晶分子の部分的な配向不良による光抜けを防止して表示特性の向上を図ることが可能になる。   As described above, according to the liquid crystal display device and the manufacturing method thereof of the present invention, the alignment of the liquid crystal molecules can be easily aligned on the entire surface of the alignment film without being affected by the unevenness of the base. It is possible to improve display characteristics by preventing light leakage due to partial alignment failure.

以下、本発明の実施の形態を説明する。ここでは、先ず、液晶表示装置の製造方法の実施形態を説明し、次にこの製造方法によって得られる液晶表示装置の構成を説明する。尚、ここでは、投射型の液晶表示装置のライトバルブとして好適に用いられる液晶パネルに本発明を適用した実施の形態を説明するが、本発明は投射型の液晶表示装置への適用に限定されるものではなく、斜方蒸着によって形成される配向膜を有する液晶表示装置に広く適用可能である。   Embodiments of the present invention will be described below. Here, first, an embodiment of a manufacturing method of a liquid crystal display device will be described, and then a configuration of the liquid crystal display device obtained by this manufacturing method will be described. Although an embodiment in which the present invention is applied to a liquid crystal panel that is suitably used as a light valve of a projection type liquid crystal display device will be described here, the present invention is limited to application to a projection type liquid crystal display device. However, the present invention can be widely applied to liquid crystal display devices having an alignment film formed by oblique deposition.

図１には、ここで形成する液晶表示装置の要部である液晶パネルの概略構成図を示す。この図に示す液晶パネルＡは、本発明を適用した液晶パネルであり、駆動基板１と対向基板２との間に液晶層３を狭持してなる。この様な構成の液晶パネルＡを作製する場合、先ず、以下に示す通常の手順により、駆動基板１側に画素電極および柱状スペーサの形成までを行う。   FIG. 1 shows a schematic configuration diagram of a liquid crystal panel which is a main part of the liquid crystal display device formed here. A liquid crystal panel A shown in this figure is a liquid crystal panel to which the present invention is applied, and has a liquid crystal layer 3 sandwiched between a driving substrate 1 and a counter substrate 2. When the liquid crystal panel A having such a configuration is manufactured, first, the pixel electrode and the columnar spacer are formed on the drive substrate 1 side by the following normal procedure.

すなわち、ガラス基板４上にスイッチング素子の活性層となる半導体層５をパターン形成する。この際、先ず、多結晶シリコン膜をＣＶＤ法により１０〜１００ｎｍの厚みで成膜する。その後、必要に応じてイオン・インプランテーション法により、一旦多結晶シリコン膜中のシリコン結晶を砕いた後、６００〜７５０℃の温度でアニールにて再結晶化処理を行う。次に、この多結晶シリコン膜を所定形状にパターニングすることにより、半導体層５を形成する。   That is, the semiconductor layer 5 serving as the active layer of the switching element is formed on the glass substrate 4 in a pattern. At this time, a polycrystalline silicon film is first formed with a thickness of 10 to 100 nm by a CVD method. Thereafter, if necessary, the silicon crystal in the polycrystalline silicon film is once crushed by an ion implantation method, and then recrystallized by annealing at a temperature of 600 to 750 ° C. Next, the semiconductor layer 5 is formed by patterning the polycrystalline silicon film into a predetermined shape.

次に、熱酸化法あるいはＬＰＣＶＤ法等の手段によって、半導体層５を覆うゲート絶縁膜６を１０〜１００ｎｍの厚みで成膜する。   Next, a gate insulating film 6 covering the semiconductor layer 5 is formed to a thickness of 10 to 100 nm by means such as thermal oxidation or LPCVD.

次いで、半導体層５の上部に、ゲート絶縁膜６を介してゲート電極７を形成する。この際、先ず、多結晶シリコンあるいはＭｏＳｉ、ＷＳｉ、Ａｌ、Ｔａ、Ｍｏ／Ｔａ、Ｍｏ、Ｗ、Ｔｉ、Ｃｒ等の金属からなる導電膜を成膜し、この導電膜を所定形状にパターニグすることによりゲート電極７を形状する。尚、ゲート電極７として多結晶シリコンを用いた場合は低抵抗化を図るためにリン（Ｐ）等の不純物を熱拡散する工程を行っても良い。   Next, a gate electrode 7 is formed on the semiconductor layer 5 through a gate insulating film 6. In this case, first, a conductive film made of polycrystalline silicon or a metal such as MoSi, WSi, Al, Ta, Mo / Ta, Mo, W, Ti, or Cr is formed, and this conductive film is patterned into a predetermined shape. Thus, the gate electrode 7 is formed. When polycrystalline silicon is used as the gate electrode 7, a step of thermally diffusing impurities such as phosphorus (P) may be performed in order to reduce the resistance.

以上の後、ゲート電極７をマスクとして、イオン・インプランテーション法、あるいはイオンドーピング法等により、半導体層５に不純物イオンを打ち込み、当該半導体層５内にソース領域およびドレイン領域を形成し、薄膜トランジスタ（thin film transistor：ＴＦＴ）からなるスイッチング素子を形成する。   After the above, impurity ions are implanted into the semiconductor layer 5 by the ion implantation method or the ion doping method using the gate electrode 7 as a mask to form a source region and a drain region in the semiconductor layer 5, and a thin film transistor ( A switching element made of a thin film transistor (TFT) is formed.

続いて、ＣＶＤ法によりＰＳＧ、ＮＳＧ等を４００〜８００ｎｍの厚みで成膜して第１層間絶縁膜８とする。そして、この第１層間絶縁膜８に半導体層５のソース領域およびドレイン領域に連通する第１コンタクトホール９Ｓ，９Ｄを開口する。   Subsequently, PSG, NSG or the like is formed to a thickness of 400 to 800 nm by the CVD method to form the first interlayer insulating film 8. Then, first contact holes 9S and 9D communicating with the source region and the drain region of the semiconductor layer 5 are opened in the first interlayer insulating film 8.

次いで、Ａｌ等の導電性薄膜をスパッタ等により３００〜７００ｎｍの厚みで成膜する。これを所定の形状にパターニングし、第１コンタクトホール９Ｓ，９Ｄを介して半導体層５のソース領域およびドレイン領域に接続されたソース電極１０Ｓ、ドレイン電極１０Ｄに加工する。その後、例えば常圧ＣＶＤ法により、ＰＳＧ等を３００〜２０００ｎｍの厚みで成膜して第２層間絶縁膜１１とする。必要があれば、ＣＭＰ法などを用いて第２層間絶縁膜１１の表面処理を施し、平坦化を行ってもよい。   Next, a conductive thin film such as Al is formed to a thickness of 300 to 700 nm by sputtering or the like. This is patterned into a predetermined shape and processed into a source electrode 10S and a drain electrode 10D connected to the source and drain regions of the semiconductor layer 5 through the first contact holes 9S and 9D. Thereafter, PSG or the like is formed to a thickness of 300 to 2000 nm to form the second interlayer insulating film 11 by, for example, atmospheric pressure CVD. If necessary, planarization may be performed by performing a surface treatment of the second interlayer insulating film 11 using a CMP method or the like.

次に、ドレイン電極１０Ｄとの電気接続をとるための第２コンタクトホール１２を第２層間絶縁膜１１に開口する。この上に、必要であればブラックマスクを兼ねる遮光膜１３を形成しても良い。この遮光膜１３は、例えばスパッタ等の方法によって、Ｔｉ、Ａｌ、Ｍｏ、Ｃｒ、Ｗ、ＴｉＮｘ、またはこれらの金属のシリサイド等を５０〜５００ｎｍ程度の厚みで成膜し、所定の形状にパターニングすることによって形成する。そして、図示したように、遮光膜１３を形成した場合には、この遮光膜１３を覆う第３層間絶縁膜１４を成膜し、さらにこの遮光膜１３を介してドレイン電極１０Ｄとの電気接続をとるための第３コンタクトホール１５を第３層間絶縁膜１４に形成する。   Next, a second contact hole 12 for establishing electrical connection with the drain electrode 10D is opened in the second interlayer insulating film 11. A light shielding film 13 that also serves as a black mask may be formed thereon if necessary. The light shielding film 13 is formed by depositing Ti, Al, Mo, Cr, W, TiNx, or a silicide of these metals with a thickness of about 50 to 500 nm by a method such as sputtering, and patterning the film into a predetermined shape. By forming. As shown in the figure, when the light shielding film 13 is formed, a third interlayer insulating film 14 covering the light shielding film 13 is formed, and further, the electrical connection with the drain electrode 10D is made through the light shielding film 13. A third contact hole 15 to be taken is formed in the third interlayer insulating film 14.

その後、第３層間絶縁膜１４上に、ドレイン電極１０Ｄと接続させた画素電極１６を形成する。ここでは、例えばＩＴＯのような金属酸化物からなる透明導電膜を３０〜３００ｎｍ程度の厚みで成膜し、この透明導電膜を所定の形状にパターニングすることにより画素電極１６を形成する。その後、必要であれば２００〜４００℃程度のアニールを行ってもよい。   Thereafter, the pixel electrode 16 connected to the drain electrode 10 </ b> D is formed on the third interlayer insulating film 14. Here, the pixel electrode 16 is formed by forming a transparent conductive film made of a metal oxide such as ITO with a thickness of about 30 to 300 nm and patterning the transparent conductive film into a predetermined shape. Thereafter, if necessary, annealing at about 200 to 400 ° C. may be performed.

次に、駆動基板１と、対向基板２との間に挟持される液晶層３の厚み（セルギャップという）をより制度よくコントロールするために、駆動基板１上の画質に影響を与えないような所望の位置に柱状スペーサ１７を形成する。ここでは先ず、アクリル製の感光性樹脂膜を２〜６μｍ程度の厚みになるようスピンコート法等によって塗布成膜し、フォトリソグラフィー技術により感光性樹脂膜をパターニングする。その後、パターニングされた感光性樹脂膜を１５０〜２５０℃で焼成することにより、柱状スペーサ１７を得る。   Next, in order to control the thickness (referred to as a cell gap) of the liquid crystal layer 3 sandwiched between the driving substrate 1 and the counter substrate 2 more systematically, the image quality on the driving substrate 1 is not affected. Columnar spacers 17 are formed at desired positions. Here, first, an acrylic photosensitive resin film is applied and formed by spin coating or the like so as to have a thickness of about 2 to 6 μm, and the photosensitive resin film is patterned by a photolithography technique. Then, the columnar spacer 17 is obtained by baking the patterned photosensitive resin film at 150-250 degreeC.

以上までは、従来と同様の工程で行って良い。そして、以降の工程、すなわち以上のように画素電極１６および柱状スペーサ１７の形成までを行った駆動基板１上に配向膜１８を形成する工程が、本発明に特徴的な工程となる。以下、この工程を、図２〜図４に基づいて説明する。   Up to the above, the steps may be performed in the same manner as in the prior art. The subsequent process, that is, the process of forming the alignment film 18 on the drive substrate 1 that has been performed up to the formation of the pixel electrode 16 and the columnar spacer 17 as described above is a characteristic process of the present invention. Hereinafter, this process will be described with reference to FIGS.

先ず、この配向膜１８の形成には、図２に示す斜方蒸着装置を用いる。この斜方蒸着装置は、真空チャンバー１０１内に、蒸着材料を蒸発させるための蒸着源１０２を備えている。そして、蒸着源１０２の上方には、所定の距離をおいて基板Ｗを保持する機構（図示省略が設けられている。ここで基板Ｗは、基板Ｗの中心と蒸着源２とを結ぶ線と、基板Ｗにおける被蒸着面Ｗａの法線Ｌとがなす角度、すなわち蒸着角度θが自在に保持される。さらに、基板Ｗは、蒸着源１０２から蒸発させた蒸着材料Ｇが入射する方位角方向が調整可能なように回転自在に保持されることとする。ここで方位角方向とは、基板Ｗの被蒸着面Ｗａに対して所定の蒸着角度θから照射される蒸着材料Ｇが、被蒸着面Ｗａに対して照射される方向である。   First, the oblique deposition apparatus shown in FIG. 2 is used to form the alignment film 18. The oblique vapor deposition apparatus includes a vapor deposition source 102 for evaporating a vapor deposition material in a vacuum chamber 101. A mechanism for holding the substrate W at a predetermined distance (not shown) is provided above the vapor deposition source 102. Here, the substrate W is a line connecting the center of the substrate W and the vapor deposition source 2. The angle formed by the normal line L of the deposition surface Wa on the substrate W, that is, the vapor deposition angle θ, is freely maintained, and the substrate W has an azimuth angle direction into which the vapor deposition material G evaporated from the vapor deposition source 102 is incident. Here, the azimuth angle direction means that the vapor deposition material G irradiated from the predetermined vapor deposition angle θ to the vapor deposition surface Wa of the substrate W is vapor deposition. It is a direction irradiated with respect to the surface Wa.

このような斜方蒸着装置を用いた配向膜の形成は、先ず、図３（１）に示すように、上述のような柱状スペーサ１７の形成までを行った駆動基板１（基板Ｗ）に対して、所定の蒸着角度θ１から無機材料（蒸着材料Ｇ）を斜方蒸着させる。この際、図２に示した真空チャンバー１０１内の蒸着源１０２に無機材料を投入し、基板Ｗとして駆動基板１を所定で収納設置する。その後、真空チャンバー１０１内を所定の真空度にまで真空引きした後、蒸着源１０２を電子ビーム等により加熱することで、無機材料を蒸着材料Ｇとして蒸発させ、駆動基板１の表面に斜方蒸着させる。この第１回目の斜方蒸着により、柱状構造の無機材料を斜方蒸着してなる第１層１８ａを成膜する。尚、無機材料としては、例えばＳｉＯxが好適に用いられる。 First, as shown in FIG. 3A, the alignment film is formed on the driving substrate 1 (substrate W) on which the columnar spacers 17 are formed as described above. Then, an inorganic material (vapor deposition material G) is obliquely deposited from a predetermined vapor deposition angle θ1. At this time, an inorganic material is put into the vapor deposition source 102 in the vacuum chamber 101 shown in FIG. Thereafter, the inside of the vacuum chamber 101 is evacuated to a predetermined degree of vacuum, and then the vapor deposition source 102 is heated by an electron beam or the like to evaporate the inorganic material as the vapor deposition material G and obliquely deposit on the surface of the driving substrate 1. Let By this first oblique deposition, a first layer 18a is formed by oblique deposition of an inorganic material having a columnar structure. For example, SiO x is suitably used as the inorganic material.

次いで、図３（２）に示すように、第１層１８ａが成膜された駆動基板１（基板Ｗ）に対して、所定の蒸着角度θ２から無機材料（蒸着材料Ｇ）を斜方蒸着させる。この第２回目の斜方蒸着においては、図４に示すように、第１層１８ａの斜方蒸着における方位角方向に対して略１８０°をなす方位角方向から無機材料（蒸着材料Ｇ）を斜方蒸着させる。このため、図２を用いた斜方蒸着装置において、基板Ｗにおける被蒸着面Ｗａの向きをそのままの状態に保って、当該基板Ｗを略１８０°回転させ、第１回目の斜方蒸着と同様の手順で第２回目の斜方蒸着を行う。   Next, as shown in FIG. 3B, an inorganic material (vapor deposition material G) is obliquely deposited from a predetermined vapor deposition angle θ2 on the drive substrate 1 (substrate W) on which the first layer 18a is formed. . In the second oblique vapor deposition, as shown in FIG. 4, the inorganic material (deposition material G) is applied from the azimuth angle direction which is approximately 180 ° with respect to the azimuth angle direction in the oblique vapor deposition of the first layer 18a. Diagonal evaporation. For this reason, in the oblique deposition apparatus using FIG. 2, the direction of the deposition surface Wa on the substrate W is maintained as it is, and the substrate W is rotated by approximately 180 °, which is the same as the first oblique deposition. The second oblique deposition is performed by the following procedure.

これにより、図３（２）に示したように、第１回目の斜方蒸着における方位角方向に対して略１８０°をなす方位角方向から無機材料を斜方蒸着してなる第２層１８ｂを成膜する。この際の無機材料（蒸着材料Ｇ）としては、第１層１８ａと同様の材料を用いて良く、第１層１８ａよりも厚膜となるように第２層１８ｂを形成することが好ましい。   As a result, as shown in FIG. 3B, the second layer 18b is formed by obliquely depositing the inorganic material from the azimuth angle direction which is approximately 180 ° with respect to the azimuth angle direction in the first oblique deposition. Is deposited. In this case, as the inorganic material (vapor deposition material G), the same material as the first layer 18a may be used, and it is preferable to form the second layer 18b so as to be thicker than the first layer 18a.

尚、基板Ｗの回転、すなわち、第１回目の斜方蒸着における方位角方向と第２回目の斜方蒸着の方位角方向とのなす角度、すなわち略１８０°とは、１８０°±２０°程度の範囲であり、好ましくは１８０°±３°の範囲であることとする。また、第１層１８ａの蒸着角度θ１および膜厚、さらに第２層１８ａの蒸着角度θ２および膜厚は、これらの積層膜からなる配向膜１８の平坦部において、液晶分子ｍが所定のプレチルト角（基板表面と液晶分子とのなす角度）で略垂直に配向するように設定されることとする。ただし、液晶分子ｍの配向は配向膜１８の最表面の形状により規制されるため、下地となる第１層１８ａの表面形状の影響を受けにくくするため、第２層１８ｂの膜厚をより厚くすることが好ましい。また、第１層１８ａを形成する際の蒸着角度θ１と第２層１８ｂを形成する際の蒸着角度θ２とは、同一角度であっても良い。   Note that the rotation of the substrate W, that is, the angle formed between the azimuth angle direction in the first oblique deposition and the azimuth direction in the second oblique deposition, that is, approximately 180 ° is about 180 ° ± 20 °. The range is preferably 180 ° ± 3 °. Further, the vapor deposition angle θ1 and the film thickness of the first layer 18a, and the vapor deposition angle θ2 and the film thickness of the second layer 18a are such that the liquid crystal molecules m have a predetermined pretilt angle in the flat portion of the alignment film 18 composed of these laminated films. It is set to be aligned substantially perpendicularly (angle formed by the substrate surface and liquid crystal molecules). However, since the orientation of the liquid crystal molecules m is regulated by the shape of the outermost surface of the alignment film 18, the thickness of the second layer 18b is made thicker in order to make it less susceptible to the surface shape of the first layer 18a serving as the base. It is preferable to do. The vapor deposition angle θ1 when forming the first layer 18a and the vapor deposition angle θ2 when forming the second layer 18b may be the same angle.

以上のようにして第１層１８ａ上に第２層１８ｂを積層してなる配向膜１８を得る。またこれにより、駆動基板１側の作製工程を終了させる。   As described above, the alignment film 18 formed by laminating the second layer 18b on the first layer 18a is obtained. Thereby, the manufacturing process on the drive substrate 1 side is completed.

一方、図１に示す対向基板２を作製する場合には、ガラス基板２１上に対向電極２２を形成し、この対向電極２２上に配向膜２３を形成する。この配向膜２３の形成は、上述した駆動基板１側の配向膜１８の形成と同様の手順で行っても良く、また１回の斜方蒸着によって形成しても良い。ただし、この配向膜２３は、液晶分子が所定のプレチルト角度で略垂直に配向するように斜方蒸着されることとする。尚、配向膜２３が形成される下地面、すなわち斜方蒸着が行われる被蒸着面が凹凸を有している場合には、駆動基板１側の配向膜１８の形成と同様の２回の斜方蒸着によって配向膜２３を形成することが好ましい。   On the other hand, when the counter substrate 2 shown in FIG. 1 is manufactured, the counter electrode 22 is formed on the glass substrate 21, and the alignment film 23 is formed on the counter electrode 22. The alignment film 23 may be formed by the same procedure as the formation of the alignment film 18 on the drive substrate 1 side described above, or may be formed by one oblique deposition. However, the alignment film 23 is obliquely deposited so that liquid crystal molecules are aligned substantially vertically at a predetermined pretilt angle. In the case where the base surface on which the alignment film 23 is formed, that is, the surface on which the oblique deposition is performed has irregularities, the oblique surface is formed twice as in the formation of the alignment film 18 on the drive substrate 1 side. It is preferable to form the alignment film 23 by side evaporation.

そして、以上のように配向膜１８，２３が形成された駆動基板１および対向基板２を作製した後には、配向膜１８，２３を内側にして駆動基板１と対向基板２とを対向配置し、これらの基板１，２間に液晶層３を充填して封止し、液晶パネルＡを完成させる。   Then, after the drive substrate 1 and the counter substrate 2 on which the alignment films 18 and 23 are formed as described above, the drive substrate 1 and the counter substrate 2 are arranged to face each other with the alignment films 18 and 23 inside. The liquid crystal layer 3 is filled and sealed between the substrates 1 and 2 to complete the liquid crystal panel A.

図５には、以上のようにして作製された液晶パネルＡを用いた液晶表示装置の一例を示す。この図に示す液晶表示装置は、投射型の液晶表示装置（いわゆる液晶プロジェクタ）であり、光ｈを発する光源５１と、光源５１から出射された光ｈを赤（Ｒ）、緑（Ｇ）、青（Ｂ）の各色に分離するための全反射ミラー５２およびダイクロックミラー５３，５４とを有している。そして、これらのミラー５２，５３，５４によって３色に分割された光の各光路上には、それぞれ２枚の直交する偏光板（図示省略）に挟まれた状態で液晶パネルＡが配置され、さらに各液晶パネルＡを透過した光を合成するためのダイクロックプリズム５５が設けられている。また、ダイクロックプリズム５５で合成された光の光路上には、投射レンズ５６が配置され、この投射レンズ５６から画像が投影される。   FIG. 5 shows an example of a liquid crystal display device using the liquid crystal panel A manufactured as described above. The liquid crystal display device shown in this figure is a projection-type liquid crystal display device (so-called liquid crystal projector), and a light source 51 that emits light h, and light h emitted from the light source 51 is converted into red (R), green (G), A total reflection mirror 52 and dichroic mirrors 53 and 54 for separating each color of blue (B) are provided. Then, on each optical path of the light divided into three colors by these mirrors 52, 53, 54, a liquid crystal panel A is disposed in a state sandwiched between two orthogonal polarizing plates (not shown), Further, a dichroic prism 55 for synthesizing light transmitted through each liquid crystal panel A is provided. A projection lens 56 is disposed on the optical path of the light synthesized by the dichroic prism 55, and an image is projected from the projection lens 56.

以上のようにして得られた液晶表示装置においては、特に図３（２）に示されるように、液晶パネルにおける駆動基板１側の配向膜１８を構成する第１層１８ａとその上層の第２層１８ｂとが、１８０°をなす方位角方向からの斜方蒸着によって形成されている。このため、第１層１８ａの表面形状と、第２層１８ｂの表面形状とは、互いに１８０°をなす方位角方向に所定のプレチルト角で液晶分子を配向させる構成となる。   In the liquid crystal display device obtained as described above, as shown in FIG. 3 (2) in particular, the first layer 18a constituting the alignment film 18 on the drive substrate 1 side in the liquid crystal panel and the second layer on the first layer 18a. The layer 18b is formed by oblique vapor deposition from an azimuth angle direction of 180 °. Therefore, the surface shape of the first layer 18a and the surface shape of the second layer 18b are configured such that liquid crystal molecules are aligned at a predetermined pretilt angle in the azimuth angle direction that is 180 °.

ここで、配向膜１８の下地には、柱状スペーサ１７や画素電極１６、さらにスイッチング素子となるＴＦＴ等の形成に由来する凹凸が存在している。このため、第２層１８ｂには、これを形成する際の斜方蒸着において陰となり十分な蒸着がなされない蒸着ムラ部分ａが生じる。このような第２層１８ｂの蒸着ムラ部分ａでは、第１層１８ａの表面形状が液晶分子ｍの配向に対して影響を及ぼし易くなる。このため、通常は、第２層１８ｂが十分に成膜されている部分の液晶分子ｍの配向に対して、第２層１８ｂの蒸着ムラ部分ａにおける液晶分子ｍの配向は１８０°をなす方位角方向となり易い。しかしながら、周囲の配向方向に対して１８０°の方位角方向に保たれた液晶分子ｍは、他の方位角方向に配向した液晶分子と比較して、その配向状態が周囲の液晶分子ｍの配向状態に揃い易い。特に、この配向膜１８は、液晶分子ｍを略垂直のプレチルト角で配向させる構成であるため、このような傾向が顕著に見られる。したがって、このような積層構造の配向膜１８においては、下地の凹凸に影響されることなく、第２層１８ｂの全面（すなわち配向膜１８の全面）において液晶分子ｍの配向が揃い易くなる。   Here, under the alignment film 18, there are irregularities resulting from the formation of columnar spacers 17, pixel electrodes 16, TFTs that serve as switching elements, and the like. For this reason, in the second layer 18b, there is an uneven deposition portion a which becomes a shadow in oblique vapor deposition when it is formed and is not sufficiently vapor deposited. In such a vapor deposition uneven portion a of the second layer 18b, the surface shape of the first layer 18a tends to affect the alignment of the liquid crystal molecules m. Therefore, normally, the orientation of the liquid crystal molecules m in the vapor deposition unevenness portion a of the second layer 18b is 180 ° with respect to the orientation of the liquid crystal molecules m in the portion where the second layer 18b is sufficiently formed. It tends to be in the angular direction. However, the liquid crystal molecules m maintained in the azimuth direction of 180 ° with respect to the surrounding orientation direction are aligned in the orientation state of the surrounding liquid crystal molecules m as compared with the liquid crystal molecules oriented in other azimuth directions. It is easy to match the condition. In particular, since the alignment film 18 is configured to align the liquid crystal molecules m with a substantially vertical pretilt angle, such a tendency is noticeable. Therefore, in the alignment film 18 having such a laminated structure, the alignment of the liquid crystal molecules m is easily aligned on the entire surface of the second layer 18b (that is, the entire surface of the alignment film 18) without being affected by the unevenness of the base.

以上の結果、このようにして得られた上記構成の液晶パネルを有する液晶表示装置においては、下地の凹凸に影響されること無く配向膜１８の全面において液晶分子ｍの配向を揃い易くすることができるため、液晶分子ｍの部分的な配向不良による光抜けを防止して表示特性の向上を図ることが可能になる。   As a result, in the liquid crystal display device having the liquid crystal panel having the above-described configuration obtained as described above, the alignment of the liquid crystal molecules m can be easily aligned over the entire surface of the alignment film 18 without being affected by the unevenness of the base. Therefore, it is possible to prevent light leakage due to partial alignment failure of the liquid crystal molecules m and improve display characteristics.

以上説明した実施形態においては、特に、配向膜が無機材料からなる液晶パネルを用いた投射型の液晶表示装置を例に取り、これに適する液晶パネルの構成を説明した。しかしながら、本発明は、斜方蒸着によって配向膜が形成される液晶パネルを有するものであれば、例えばパネル面を直視する反射型の液晶表示装置や透過型の液晶表示装置にも適用可能であり、同様の効果を得ることができる。   In the embodiment described above, a projection type liquid crystal display device using a liquid crystal panel whose alignment film is made of an inorganic material is taken as an example, and the configuration of a liquid crystal panel suitable for this is described. However, the present invention can be applied to, for example, a reflective liquid crystal display device or a transmissive liquid crystal display device in which a panel surface is directly viewed as long as the liquid crystal panel has an alignment film formed by oblique deposition. The same effect can be obtained.

また、以上の実施形態においては、特に配向膜の下地の凹凸が大きい駆動基板１側の配向膜１８を積層構造とし、対向基板２側の配向膜２３も同様の積層構造としても良いとした。しかしながら、例えば対向基板２側に柱状スペーサが設けられていて大きな凹凸が有り、駆動基板１側の凹凸が少ない場合には、対向基板２側の配向膜２３のみを上述した積層構造としても良い。   Further, in the above embodiment, the alignment film 18 on the side of the drive substrate 1 where the unevenness of the underlying layer of the alignment film is particularly large may have a laminated structure, and the alignment film 23 on the counter substrate 2 side may have a similar laminated structure. However, for example, when a columnar spacer is provided on the counter substrate 2 side and there are large irregularities, and there are few irregularities on the drive substrate 1 side, only the alignment film 23 on the counter substrate 2 side may have the above-described laminated structure.

液晶表示装置の要部を構成する液晶パネルの拡大断面図である。It is an expanded sectional view of the liquid crystal panel which comprises the principal part of a liquid crystal display device. 液晶パネルの配向膜の形成に用いられる斜方蒸着装置である。This is an oblique deposition apparatus used for forming an alignment film of a liquid crystal panel. 配向膜の形成手順を示す断面工程図である。It is sectional process drawing which shows the formation procedure of alignment film. 配向膜形成の際の斜方蒸着の方位角方向を説明する斜視図である。It is a perspective view explaining the azimuth angle direction of oblique vapor deposition in the case of alignment film formation. 液晶パネルを用いた投射型の液晶表示装置の構成図である。It is a block diagram of a projection-type liquid crystal display device using a liquid crystal panel.

符号の説明Explanation of symbols

１…駆動基板、２…対向基板、３…液晶層、１６…画素電極、１７…柱状スペーサ、１８，２３…配向膜、１８ａ…第１層、１８ｂ…第２層、ＴＦＴ…スイッチング素子、５１…光源（光学系）、５２…全反射ミラー、５３，５４…ダイクロックミラー、Ａ…液晶パネル、ｍ…液晶分子   DESCRIPTION OF SYMBOLS 1 ... Driving substrate, 2 ... Counter substrate, 3 ... Liquid crystal layer, 16 ... Pixel electrode, 17 ... Columnar spacer, 18, 23 ... Alignment film, 18a ... 1st layer, 18b ... 2nd layer, TFT ... Switching element, 51 ... light source (optical system), 52 ... total reflection mirror, 53, 54 ... dichroic mirror, A ... liquid crystal panel, m ... liquid crystal molecule

Claims (8)

それぞれに設けられた配向膜を内側にして対向配置された一対の基板と、当該一対の基板間に狭持された液晶層とを備えた液晶表示装置において、
前記配向膜の少なくとも一方は、斜方蒸着によって形成された第１層と、当該第１層に対して略１８０°をなす方位角方向からの斜方蒸着によって形成された第２層との積層構造からなる
ことを特徴とする液晶表示装置。 In a liquid crystal display device comprising a pair of substrates disposed facing each other with the alignment film provided inside, and a liquid crystal layer sandwiched between the pair of substrates,
At least one of the alignment films is a laminate of a first layer formed by oblique vapor deposition and a second layer formed by oblique vapor deposition from an azimuthal direction that forms approximately 180 ° with respect to the first layer. A liquid crystal display device characterized by comprising a structure. 請求項１記載の液晶表示装置において、
前記積層構造の配向膜の下方には、画素電極と共に当該画素電極のスイッチング素子がマトリックス状に配置されている
ことを特徴とする液晶表示装置。 The liquid crystal display device according to claim 1.
Below the alignment film having the laminated structure, switching elements of the pixel electrodes are arranged in a matrix together with the pixel electrodes. 請求項１記載の液晶表示装置において、
前記積層構造の配向膜の下方には、前記一対の基板間の間隔を規制するための柱状スペーサが設けられている
ことを特徴とする液晶表示装置。 The liquid crystal display device according to claim 1.
A columnar spacer for regulating a distance between the pair of substrates is provided below the alignment film having the stacked structure. 請求項１記載の液晶表示装置において、
前記積層構造の配向膜は、前記第１層よりも当該第１層上に形成された第２層の膜厚が厚い
ことを特徴とする液晶表示装置。 The liquid crystal display device according to claim 1.
The liquid crystal display device, wherein the alignment film having the stacked structure has a thickness of a second layer formed on the first layer larger than that of the first layer. 請求項１記載の液晶表示装置において、
前記配向膜は無機材料で構成されている
ことを特徴とする液晶表示装置。 The liquid crystal display device according to claim 1.
The liquid crystal display device, wherein the alignment film is made of an inorganic material. 請求項５記載の液晶表示装置において、
前記一対の基板を対向配置してなるパネルに、当該パネルを透過させる光を照射する光学系を備えた
ことを特徴とする液晶表示装置。 The liquid crystal display device according to claim 5.
A liquid crystal display device comprising: a panel formed by opposingly arranging the pair of substrates; and an optical system for irradiating light transmitted through the panel. 請求項１記載の液晶表示装置において、
前記液晶層を構成する液晶分子は、当該液晶層に対して電界無印加時に垂直配向する
ことを特徴とする液晶表示装置。 The liquid crystal display device according to claim 1.
A liquid crystal display device, wherein the liquid crystal molecules constituting the liquid crystal layer are vertically aligned when no electric field is applied to the liquid crystal layer. それぞれに設けられた配向膜を内側にして対向配置された一対の基板と、当該一対の基板間に狭持された液晶層とを備えた液晶表示装置の製造方法であって、
前記一対の基板の少なくとも一方における前記配向膜の形成においては、
斜方蒸着によって第１層を形成する工程と、
前記第１層の斜方蒸着に対して略１８０°をなす方位角方向からの斜方蒸着によって、当該第１層上に第２層を形成する工程とが行われる
ことを特徴とする液晶表示装置の製造方法。


A method for manufacturing a liquid crystal display device, comprising: a pair of substrates opposed to each other with an alignment film provided inside; and a liquid crystal layer sandwiched between the pair of substrates,
In the formation of the alignment film on at least one of the pair of substrates,
Forming a first layer by oblique deposition;
And a step of forming a second layer on the first layer by oblique vapor deposition from an azimuth angle direction that forms approximately 180 ° with respect to the oblique vapor deposition of the first layer. Device manufacturing method.


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US7755733B2 (en) 2005-11-14 2010-07-13 Samsung Electronics Co., Ltd. Method of forming vertical inorganic alignment layer and liquid crystal display apparatus having the same
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JP2007171942A (en) * 2005-11-24 2007-07-05 Semiconductor Energy Lab Co Ltd Method for manufacturing liquid crystal display device
JP2008152007A (en) * 2006-12-18 2008-07-03 Seiko Epson Corp Liquid crystal device and method for manufacturing the same, and electronic apparatus equipped with the same
JP2009093097A (en) * 2007-10-12 2009-04-30 Citizen Finetech Miyota Co Ltd Liquid crystal display element and manufacturing method therefor
US8164725B2 (en) 2008-03-18 2012-04-24 Seiko Epson Corporation Liquid crystal device and electronic apparatus
JP2010134180A (en) * 2008-12-04 2010-06-17 Seiko Epson Corp Liquid crystal device and electronic apparatus
JP2013235129A (en) * 2012-05-09 2013-11-21 Seiko Epson Corp Liquid crystal device and electronic apparatus
JP2013117744A (en) * 2013-03-18 2013-06-13 Sony Corp Liquid crystal display element and projection liquid crystal display device
KR20150030026A (en) * 2013-09-11 2015-03-19 삼성디스플레이 주식회사 Liquid crystal display panel and mathod for fabricating the same
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