JP2005136415A - III−V族GaN系化合物半導体及びそれに適用されるp型電極 - Google Patents
III−V族GaN系化合物半導体及びそれに適用されるp型電極 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 150000001875 compounds Chemical class 0.000 title claims abstract description 20
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 13
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 13
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 13
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 13
- 229910052742 iron Inorganic materials 0.000 claims abstract description 13
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 13
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 13
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 13
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 13
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 13
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 13
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 13
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 13
- 229910052713 technetium Inorganic materials 0.000 claims abstract description 13
- 229910052718 tin Inorganic materials 0.000 claims abstract description 13
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 13
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 13
- 229910052737 gold Inorganic materials 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 30
- 229910045601 alloy Inorganic materials 0.000 claims description 27
- 239000000956 alloy Substances 0.000 claims description 27
- 239000006104 solid solution Substances 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 8
- -1 nitride compound Chemical class 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 46
- 239000010931 gold Substances 0.000 description 38
- 239000011701 zinc Substances 0.000 description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 25
- 229910007567 Zn-Ni Inorganic materials 0.000 description 16
- 229910007614 Zn—Ni Inorganic materials 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 14
- 239000007772 electrode material Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000005253 cladding Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 229910009369 Zn Mg Inorganic materials 0.000 description 4
- 229910007573 Zn-Mg Inorganic materials 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910000480 nickel oxide Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910019080 Mg-H Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
【解決手段】III−V族窒化物半導体層に形成されるものであって、Znに溶質元素が含まれるZn系物質による第1層と、前記第1層上部に積層されるものとしてAu、Co、Pd、Pt、Ru、Rh、Ir、Ta、Cr、Mn、Mo、Tc、W、Re、Fe、Sc、Ti、Sn、Ge、Sb、Al、ITO、ZnOで構成される群から選択された少なくとも1つの物質による第2層と、を含むp−電極。これにより、Zn系p型電極は優れた電気、光学及び熱的特性を示す。
【選択図】図2A
Description
1)p型半導体層を含むGaN系半導体結晶層が形成された基板(試料)をトリクロロエチレン、アセトン、メタノール、蒸留水で超音波洗浄器の中で60℃にそれぞれ5分ずつ表面洗浄した後、試料に残っている水分を除去するために100℃で10分間ハードベーキングをする。
1)前記実施例1の1)から4)段階と同一方法で行う。
1)前記実施例1の1)から4)段階と同一方法で行う。
6 n−電極
41 第1電極層
42 第2電極層。
Claims (18)
- III−V族窒化物の半導体層上に形成されるものであって、Znに溶質元素が含まれるZn系物質による第1層と、
前記第1層上部に積層されるものとして{Au、Co、Pd、Pt、Ru、Rh、Ir、Ta、Cr、Mn、Mo、Tc、W、Re、Fe、Sc、Ti、Sn、Ge、Sb、Al、ITO、ZITO、ZIO、GIO、ZTO、FTO、AZO、GZO、In4Sn3O12およびZn1−xMgxO(0≦x≦1)}で構成される群から選択された少なくとも1つの物質による第2層と、を含むことを特徴とするIII−V族GaN系化合物半導体の電極。 - 第1層のZn系物質は合金及び固溶体のうち何れか1つであることを特徴とする請求項1に記載のIII−V族GaN系化合物半導体の電極。
- 前記Zn系物質はNi、Mg、Co、Pd、Pt、Ru、Rh、Ir、Ta、Cr、Mn、Mo、Tc、W、Re、Fe、Sc、Ti、Sn、Ge、SbおよびAgよりなる群から選択された少なくとも1つの溶質元素を含むことを特徴とする請求項1または2に記載のIII−V族GaN系化合物半導体の電極。
- 前記第1層と第2層との間にCo、Pd、Pt、Ru、Rh、Ir、Ta、Cr、Mn、Mo、Tc、W、Re、Fe、Sc、Ti、Sn、GeおよびSbよりなる群から選択された少なくとも1つの物質による中間層が介在することを特徴とする請求項1〜3のいずれか1項に記載のIII−V族GaN系化合物半導体の電極。
- 前記Zn系物質に含まれる溶質元素の成分の量は0.1〜49.9原子%であることを特徴とする請求項1〜4のいずれか1項に記載のIII−V族GaN系化合物半導体の電極。
- 第1層及び第2層は0.1nm〜100nmの厚さを有することを特徴とする請求項1または2に記載のIII−V族GaN系化合物半導体の電極。
- 第1及び第2層及びこれら間の中間層は0.1nm〜100nmの厚さを有することを特徴とする請求項4に記載のIII−V族GaN系化合物半導体の電極。
- 前記半導体層はGaNまたはAlxInyGazN(0<x+y+z≦1)であることを特徴とする請求項1または2に記載のIII−V族GaN系化合物半導体の電極。
- 前記第1層及び第2層が少なくとも酸素を含む雰囲気で熱処理されてなることを特徴とする請求項1に記載の化合物半導体の電極。
- 発光のための活性層を含む多重積層によるGaN系化合物半導体層と、
前記GaN系化合物半導体層上に形成されたp型半導体層と、
前記p型半導体層上に形成されたp型電極層と、を含むIII−V族GaN系化合物半導体において、
前記電極層は、
前記p型半導体層上に形成されるものであって、Znに溶質元素が含まれるZn系物質による第1層と、
前記第1層上部に積層されるものであって、{Au、Co、Pd、Pt、Ru、Rh、Ir、Ta、Cr、Mn、Mo、Tc、W、Re、Fe、Sc、Ti、Sn、Ge、Sb、Al、ITO、ZITO、ZIO、GIO、ZTO、FTO、AZO、GZO、In4Sn3O12およびZn1−xMgxO(0≦x≦1)}で構成される群から選択された少なくとも1つの物質による第2層とを含むことを特徴とするIII−V族GaN系化合物半導体。 - 前記第1層のZn系物質は合金及び固溶体のうち何れか1つであることを特徴とする請求項10に記載のIII−V族GaN系化合物半導体。
- 前記Zn系物質はNi、Mg、Co、Pd、Pt、Ru、Rh、Ir、Ta、Cr、Mn、Mo、Tc、W、Re、Fe、Sc、Ti、Sn、Ge、SbおよびAgよりなる群から選択された少なくとも1つの溶質元素を含むことを特徴とする請求項10または11に記載のIII−V族GaN系化合物半導体。
- 前記第1層と第2層との間にCo、Pd、Pt、Ru、Rh、Ir、Ta、Cr、Mn、Mo、Tc、W、Re、Fe、Sc、Ti、Sn、GeおよびSbよりなる群から選択された少なくとも1つの物質による中間層が介在することを特徴とする請求項10〜12のいずれ化1項に記載のIII−V族GaN系化合物半導体。
- 前記Zn系物質に含まれる溶質元素の成分の量は0.1〜49.9原子%であることを特徴とする請求項10〜13のいずれか1項に記載のIII−V族GaN系化合物半導体。
- 第1層及び第2層は0.1nm〜100nmの厚さを有することを特徴とする請求項13に記載のIII−V族GaN系化合物半導体。
- 第1及び第2層及びこれらの間の中間層は0.1nm〜100nmの厚さを有することを特徴とする請求項14に記載のIII−V族GaN系化合物半導体。
- 前記半導体層はGaNまたはAlxInyGazN(0<x+y+z≦1)であることを特徴とする請求項10または11に記載のIII−V族GaN系化合物半導体。
- 前記電極層は少なくとも酸素を含む雰囲気で熱処理されてなることを特徴とする請求項10に記載のIII−V族GaN化合物半導体。
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KR1020030075219A KR100647278B1 (ko) | 2003-10-27 | 2003-10-27 | III - V 족 GaN 계 화합물 반도체 및 이에적용되는 p-형 전극 |
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Cited By (6)
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WO2007123239A1 (ja) | 2006-04-24 | 2007-11-01 | Asahi Glass Company, Limited | 発光装置 |
WO2007135754A1 (ja) | 2006-05-18 | 2007-11-29 | Asahi Glass Company, Limited | 発光装置の製造方法および発光装置 |
US7964424B2 (en) | 2007-11-20 | 2011-06-21 | Mitsubishi Electric Corporation | Method for manufacturing nitride semiconductor light-emitting element |
JP2012070016A (ja) * | 2010-04-01 | 2012-04-05 | Panasonic Corp | 窒化物系半導体素子およびその製造方法 |
US8895419B2 (en) | 2011-07-06 | 2014-11-25 | Panasonic Corporation | Nitride semiconductor light-emitting element and method for fabricating the same |
JPWO2016125344A1 (ja) * | 2015-02-03 | 2017-11-09 | ソニー株式会社 | 発光ダイオード |
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US20050087758A1 (en) | 2005-04-28 |
US7285857B2 (en) | 2007-10-23 |
JP5128755B2 (ja) | 2013-01-23 |
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EP1536481A2 (en) | 2005-06-01 |
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