JP2005135611A - 複合型荷電粒子ビーム装置 - Google Patents
複合型荷電粒子ビーム装置 Download PDFInfo
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- JP2005135611A JP2005135611A JP2003367445A JP2003367445A JP2005135611A JP 2005135611 A JP2005135611 A JP 2005135611A JP 2003367445 A JP2003367445 A JP 2003367445A JP 2003367445 A JP2003367445 A JP 2003367445A JP 2005135611 A JP2005135611 A JP 2005135611A
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Abstract
【解決手段】 本発明の複合型荷電粒子ビーム装置は、二次イオン検出器2と二次電子検出器1を併設する複合型荷電粒子ビーム装置であって、二次イオン検出器2と二次電子検出器1の信号を同時にバランスよく得られるように二次イオン検出器2と二次電子検出器1の検出信号レベルを検知する手段と、二次イオン検出器2と二次電子検出器1の引き込み電極3n、3pには印加電圧可変手段6が設けられると共に、前記検出信号レベルに基づいて印加電圧可変手段6を制御する手段とを備えるものとした。
【選択図】 図1
Description
2 二次イオン検出器 6 印加電圧可変手段
3p,3n 引き込み電極
4 レベル検出器
Claims (5)
- 二次イオン検出器と二次電子検出器を併設する複合型荷電粒子ビーム装置であって、前記二次イオン検出器と二次電子検出器の検出信号レベルを検知する手段と、前記二次イオン検出器及び二次電子検出器の引き込み電極と試料表面間には電界調整手段が設けられると共に、前記検出信号レベルに基づいて前記電界調整手段を制御する手段とを備え、前記二次イオン検出器と二次電子検出器と試料表面間の電界を調整して両検出信号を同時にバランスよく得られるようにしたことを特徴とする複合型荷電粒子ビーム装置。
- 二次イオン検出器と二次電子検出器の引き込み電極と試料表面間に設けられた電界調整手段は、二次イオン検出器と二次電子検出器の引き込み電極に印加電圧可変手段が設けられたものである請求項1に記載の複合型荷電粒子ビーム装置。
- 二次イオン検出器及び二次電子検出器の引き込み電極と試料表面間に設けられた電界調整手段は、二次イオン検出器と二次電子検出器の前段に別途設けられた引き込み電極に印加電圧可変手段が設けられたものである請求項1に記載の複合型荷電粒子ビーム装置。
- 二次イオン検出器及び二次電子検出器の引き込み電極と試料表面間に設けられた電界調整手段は、試料表面の電位を調整するように試料ステージに印加電圧可変手段が設けられたものである請求項1に記載の複合型荷電粒子ビーム装置。
- 二次イオン検出器の信号は走査型イオン顕微鏡像として、また、二次電子検出器の信号は走査型電子顕微鏡像として用いられるものである請求項1から4のいずれかに記載の複合型荷電粒子ビーム装置。
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JP2003367445A JP4291109B2 (ja) | 2003-10-28 | 2003-10-28 | 複合型荷電粒子ビーム装置 |
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JP2003367445A JP4291109B2 (ja) | 2003-10-28 | 2003-10-28 | 複合型荷電粒子ビーム装置 |
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JP2005135611A true JP2005135611A (ja) | 2005-05-26 |
JP4291109B2 JP4291109B2 (ja) | 2009-07-08 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007018928A (ja) * | 2005-07-08 | 2007-01-25 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
JP2008078142A (ja) * | 2006-09-23 | 2008-04-03 | Carl Zeiss Smt Ltd | 荷電粒子ビーム器具および荷電粒子を検出する方法 |
JP2011233249A (ja) * | 2010-04-23 | 2011-11-17 | Tokyo Institute Of Technology | イオンビーム照射位置決め装置 |
KR101321049B1 (ko) * | 2013-02-22 | 2013-10-23 | 한국기계연구원 | 전자 검출기 |
JP2014132598A (ja) * | 2007-06-18 | 2014-07-17 | Fei Co | チャンバ内電子検出器 |
-
2003
- 2003-10-28 JP JP2003367445A patent/JP4291109B2/ja not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007018928A (ja) * | 2005-07-08 | 2007-01-25 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
JP2008078142A (ja) * | 2006-09-23 | 2008-04-03 | Carl Zeiss Smt Ltd | 荷電粒子ビーム器具および荷電粒子を検出する方法 |
JP2014132598A (ja) * | 2007-06-18 | 2014-07-17 | Fei Co | チャンバ内電子検出器 |
JP2011233249A (ja) * | 2010-04-23 | 2011-11-17 | Tokyo Institute Of Technology | イオンビーム照射位置決め装置 |
KR101321049B1 (ko) * | 2013-02-22 | 2013-10-23 | 한국기계연구원 | 전자 검출기 |
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