JP2005108736A - 有機el素子および有機elパネル - Google Patents
有機el素子および有機elパネル Download PDFInfo
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- JP2005108736A JP2005108736A JP2003342663A JP2003342663A JP2005108736A JP 2005108736 A JP2005108736 A JP 2005108736A JP 2003342663 A JP2003342663 A JP 2003342663A JP 2003342663 A JP2003342663 A JP 2003342663A JP 2005108736 A JP2005108736 A JP 2005108736A
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- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 74
- 239000012044 organic layer Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 8
- 230000006866 deterioration Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 79
- 239000000758 substrate Substances 0.000 description 15
- 239000011521 glass Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000005525 hole transport Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- IAQWMWUKBQPOIY-UHFFFAOYSA-N chromium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Cr+4] IAQWMWUKBQPOIY-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
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- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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Abstract
【解決手段】有機EL素子の透明電極61の下側には、半透過膜69が配置されており、この半透過膜69の上面から反射層として機能する対向電極66の下面までの距離は、この間の空間が特定波長の光を選択する微小共振器として作用する距離に設定されている。そして、半透過膜69の下方であって、半透過膜69の周辺部分に対応する位置には遮光膜96が配置されており、光学長の変化による異なった色の光が射出されるのを防止している。
【選択図】図1
Description
Claims (6)
- 有機層を第1および第2電極間に備え、第1および第2電極間に電圧を印加することで有機層に電流が流れ発光する有機EL素子であって、
前記有機層から射出される光を所定の光学長の範囲内で繰り返し反射させ、これによって特定の波長の光を増強選択する微小共振器と、
この微小共振器の光学長が変動する部分に対応して設けられ、微小共振器から射出される光を遮光する遮光膜と、
を有することを特徴とする有機EL素子。 - 有機層を第1および第2電極間に備え、第1および第2電極間に電圧を印加することで有機層に電流を流し発光する有機EL素子を多数有する有機ELパネルであって、
前記第1電極は前記有機発光層からの光を反射する半透過層を含み、
前記第2電極は前記有機発光層からの光を反射する反射層を含み、
前記反射層と、半透過層間の距離を、所定の光学長とすることで、前記有機発光層において発生した光を前記反射層と半透過層の間で繰り返し反射させ、これによって前記反射層と、半透過層間を特定波長の光を増強選択して前記半透過膜から射出する微小共振器として機能させるとともに、
かつ前記微小共振器の光学長が変動する部分に対応して、微小共振器から射出される光を遮光する遮光膜を設けることを特徴とする有機ELパネル。 - 請求項2に記載のパネルにおいて、
前記第1電極を半透過層と透明電極の積層構造とし、前記第2電極を反射層として機能する金属電極とすることを特徴とする有機ELパネル。 - 請求項3に記載のパネルにおいて、
前記半透過層と透明電極のうち、透明電極が前記有機層側に配置されていることを特徴とする有機ELパネル。 - 請求項4に記載のパネルにおいて、
前記第1電極が陽極、前記第2電極が陰極であることを特徴とする有機ELパネル。 - 請求項2に記載のパネルにおいて、
前記第1電極を反射層として機能する金属膜と透明電極の積層構造とし、前記第2電極を半透過膜と透明電極の積層構造とすることを特徴とする有機ELパネル。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342663A JP4497881B2 (ja) | 2003-09-30 | 2003-09-30 | 有機el素子および有機elパネル |
TW093124776A TWI235015B (en) | 2003-09-30 | 2004-08-18 | Organic EL panel |
KR1020040077132A KR100782732B1 (ko) | 2003-09-30 | 2004-09-24 | 유기 el 소자 및 유기 el 패널 |
CNB2004100805416A CN100405876C (zh) | 2003-09-30 | 2004-09-28 | 有机电致发光组件及有机电致发光面板 |
US10/952,645 US7498738B2 (en) | 2003-09-30 | 2004-09-29 | Organic EL element and organic EL panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342663A JP4497881B2 (ja) | 2003-09-30 | 2003-09-30 | 有機el素子および有機elパネル |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005108736A true JP2005108736A (ja) | 2005-04-21 |
JP4497881B2 JP4497881B2 (ja) | 2010-07-07 |
Family
ID=34373508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003342663A Expired - Lifetime JP4497881B2 (ja) | 2003-09-30 | 2003-09-30 | 有機el素子および有機elパネル |
Country Status (5)
Country | Link |
---|---|
US (1) | US7498738B2 (ja) |
JP (1) | JP4497881B2 (ja) |
KR (1) | KR100782732B1 (ja) |
CN (1) | CN100405876C (ja) |
TW (1) | TWI235015B (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007250306A (ja) * | 2006-03-15 | 2007-09-27 | Seiko Epson Corp | 発光装置および電子機器 |
JP2009231093A (ja) * | 2008-03-24 | 2009-10-08 | Casio Comput Co Ltd | エレクトロルミネッセンスパネルの製造方法及びエレクトロルミネッセンスパネル |
US7663653B2 (en) | 2005-02-24 | 2010-02-16 | Seiko Epson Corporation | Optical head and image forming apparatus incorporating the same |
JP2010164983A (ja) * | 2005-11-14 | 2010-07-29 | Seiko Epson Corp | 発光装置および電子機器 |
US8487313B2 (en) | 2005-11-14 | 2013-07-16 | Seiko Epson Corporation | Emissive device and electronic apparatus |
JP2013165014A (ja) * | 2012-02-13 | 2013-08-22 | Seiko Epson Corp | 有機el装置、及び電子機器 |
US8653729B2 (en) | 2008-10-13 | 2014-02-18 | Samsung Display Co., Ltd. | Organic light emitting diode display and method for manufacturing the same |
KR101376427B1 (ko) | 2006-02-03 | 2014-03-20 | 소니 주식회사 | 표시 소자 및 표시 장치 |
JP2016167400A (ja) * | 2015-03-10 | 2016-09-15 | 株式会社ジャパンディスプレイ | 表示装置およびその製造方法 |
JP2022514563A (ja) * | 2019-05-29 | 2022-02-14 | 昆山国顕光電有限公司 | 表示パネル及びその製作方法 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4716699B2 (ja) * | 2003-09-30 | 2011-07-06 | 三洋電機株式会社 | 有機elパネル |
JP2005197009A (ja) * | 2003-12-26 | 2005-07-21 | Sanyo Electric Co Ltd | 表示装置及びその製造方法及び製造装置 |
JP4475942B2 (ja) * | 2003-12-26 | 2010-06-09 | 三洋電機株式会社 | 表示装置及びその製造方法 |
JP4439260B2 (ja) | 2003-12-26 | 2010-03-24 | 三洋電機株式会社 | 表示装置の製造方法 |
KR101087567B1 (ko) * | 2004-03-23 | 2011-11-28 | 엘지디스플레이 주식회사 | 유기전계발광 소자 및 그 제조방법 |
TWI272039B (en) | 2004-06-18 | 2007-01-21 | Sanyo Electric Co | Electroluminescence panel |
KR100573154B1 (ko) * | 2004-06-26 | 2006-04-24 | 삼성에스디아이 주식회사 | 전계 발광 디스플레이 장치 및 이의 제조 방법 |
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TWI299635B (en) | 2005-12-09 | 2008-08-01 | Au Optronics Corp | Organic electroluminescent display |
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KR100770104B1 (ko) * | 2006-09-28 | 2007-10-24 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조 방법과 이를 위한이송 장치 |
KR100740132B1 (ko) * | 2006-11-10 | 2007-07-16 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 |
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Also Published As
Publication number | Publication date |
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TWI235015B (en) | 2005-06-21 |
CN100405876C (zh) | 2008-07-23 |
KR100782732B1 (ko) | 2007-12-05 |
US7498738B2 (en) | 2009-03-03 |
KR20050031964A (ko) | 2005-04-06 |
JP4497881B2 (ja) | 2010-07-07 |
CN1604706A (zh) | 2005-04-06 |
TW200513141A (en) | 2005-04-01 |
US20050067945A1 (en) | 2005-03-31 |
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