JP2005082833A - 薄膜堆積用分子線源セル - Google Patents
薄膜堆積用分子線源セル Download PDFInfo
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- JP2005082833A JP2005082833A JP2003314231A JP2003314231A JP2005082833A JP 2005082833 A JP2005082833 A JP 2005082833A JP 2003314231 A JP2003314231 A JP 2003314231A JP 2003314231 A JP2003314231 A JP 2003314231A JP 2005082833 A JP2005082833 A JP 2005082833A
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Abstract
【解決手段】 薄膜堆積用分子線源セルは、坩堝10内に収納した蒸発材料をヒータ15、16で加熱して蒸発し、蒸発材料の分子を坩堝10の分子放出口14から放出し、この放出した分子を固体表面の成膜面上に堆積させて薄膜を形成する。この分子線源セルは、坩堝10の蒸発材料を収納するボトムに近い側の蒸発材料収納部11を加熱する第一のヒータ15と、分子放出口14に近い分子放出部12を加熱する第二のヒータ16とを有し、これら第一のヒータ15と第二のヒータ16とを加熱する単一の加熱電源21を備えると共に、一方のヒータ15または16に供給される加熱電源21の出力がパルス幅可変チョッパ25により電力制御される。
【選択図】 図1
Description
以下、このような本発明の実施例について、図面を参照しながら具体例を挙げて詳細に説明する。
坩堝10は、PBN(パイロリティック・ボロン・ナイトライド)等からなる容器状のもので、前述した蒸発材料aを収納する有底の円筒形の蒸発材料収納部11と、坩堝10の上端の放出口14を含む分子放出部12とを有する。この分子放出部12では、その中間部が括れている。すなわち、蒸発材料収納部11から放出口14に至る間に内径が狭くなるようなテーパが形成され、さらにこの内径が最小となった括れた部分から分子放出口14に向けて内径が次第に増大するテーパが形成されている。この放出口14に向けて内径が増大する先端側のテーパ部分はテーパガイド部13である。
なお、これらのヒータ15、16として線状のヒータ以外に面状ヒータを使用してもよい。
また、上記実施例においては加熱電源21内部の電力供給源23は可変電圧源として説明したが、電力供給源は可変電圧源、可変電流源、可変電力源の何れであってもよい。
14 坩堝の分子放出口
11 坩堝の蒸発材料収納部
12 坩堝の近い分子放出部
15 第一のヒータ
16 第二のヒータ
21 加熱電源
25 パルス幅可変チョッパ
27 可変器27
Claims (2)
- 坩堝(10)内に収納した蒸発材料をヒータ(15)、(16)で加熱して蒸発し、蒸発材料の分子を坩堝(10)の分子放出口(14)から放出し、この放出した分子を固体表面の成膜面上に堆積させて薄膜を形成する薄膜堆積用分子線源セルにおいて、坩堝(10)の蒸発材料を収納するボトムに近い側の蒸発材料収納部(11)を加熱する第一のヒータ(15)と、分子放出口(14)に近い分子放出部(12)を加熱する第二のヒータ(16)とを有し、これら第一のヒータ(15)と第二のヒータ(16)とを加熱する単一の加熱電源(21)を備えると共に、一方のヒータ(15)または(16)に供給される加熱電源(21)の出力がパルス幅可変チョッパ(25)により電力制御されることを特徴とする薄膜堆積用分子線源セル。
- パルス幅可変チョッパ(25)は、そのチョッピングするパルス幅が可変器(27)により可変、設定され、そのパルス幅により、一方のヒータ(15)または(16)に供給される加熱電力が、他方のヒータ(16)または(15)に供給される加熱電力に対して任意の割合に可変、設定されることを特徴とする請求項1に記載の薄膜堆積用分子線源セル。
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JP2005082833A true JP2005082833A (ja) | 2005-03-31 |
JP4268847B2 JP4268847B2 (ja) | 2009-05-27 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100711886B1 (ko) | 2005-08-31 | 2007-04-25 | 삼성에스디아이 주식회사 | 무기 증착원 및 이의 가열원 제어방법 |
KR100805531B1 (ko) * | 2006-06-13 | 2008-02-20 | 삼성에스디아이 주식회사 | 증발원 |
KR101006952B1 (ko) | 2008-04-25 | 2011-01-12 | (주)알파플러스 | 박막 제조용 진공 증발원 장치 |
KR101489366B1 (ko) * | 2012-12-11 | 2015-02-03 | (주)알파플러스 | 진공 증발원 |
-
2003
- 2003-09-05 JP JP2003314231A patent/JP4268847B2/ja not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100711886B1 (ko) | 2005-08-31 | 2007-04-25 | 삼성에스디아이 주식회사 | 무기 증착원 및 이의 가열원 제어방법 |
KR100805531B1 (ko) * | 2006-06-13 | 2008-02-20 | 삼성에스디아이 주식회사 | 증발원 |
US8574367B2 (en) | 2006-06-13 | 2013-11-05 | Samsung Display Co., Ltd. | Evaporation source |
KR101006952B1 (ko) | 2008-04-25 | 2011-01-12 | (주)알파플러스 | 박막 제조용 진공 증발원 장치 |
KR101489366B1 (ko) * | 2012-12-11 | 2015-02-03 | (주)알파플러스 | 진공 증발원 |
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