JP2005064487A5 - - Google Patents
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- JP2005064487A5 JP2005064487A5 JP2004215709A JP2004215709A JP2005064487A5 JP 2005064487 A5 JP2005064487 A5 JP 2005064487A5 JP 2004215709 A JP2004215709 A JP 2004215709A JP 2004215709 A JP2004215709 A JP 2004215709A JP 2005064487 A5 JP2005064487 A5 JP 2005064487A5
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- semiconductor film
- crystal grains
- crystalline semiconductor
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- laser beam
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Claims (15)
配向性がランダムな結晶粒を有する結晶性半導体膜と、を有する
ことを特徴とする半導体装置。 By irradiating the semiconductor film with a pulse oscillation type laser beam , a crystalline semiconductor film having crystal grains provided between ridges arranged in a lattice shape and having a uniform orientation between adjacent ones;
Wherein a has a crystalline semiconductor film distribution tropism having random crystal grains, the.
配向性がランダムな結晶粒を有する結晶性半導体膜を用いた容量素子と、を有する
ことを特徴とする半導体装置。 By irradiating the semiconductor film with pulsed laser light, a thin film transistor using a crystalline semiconductor film having crystal grains that are provided between ridges aligned in a lattice shape and aligned in an adjacent manner,
Wherein a having, a capacitor element using the crystalline semiconductor film distribution tropism have random crystal grains.
配向性がランダムな結晶粒を有する結晶性半導体膜を用いた容量素子と、を有する画素部を含む
ことを特徴とする半導体装置。 By irradiating the semiconductor film with pulsed laser light, a thin film transistor using a crystalline semiconductor film having crystal grains that are provided between ridges aligned in a lattice shape and aligned in an adjacent manner,
A semiconductor device comprising a pixel portion having a capacitive element using the crystalline semiconductor film distribution tropism have random crystal grains.
前記薄膜トランジスタのチャネル形成領域は、前記リッジを有さない
ことを特徴とする半導体装置。 In claim 2 or 3 ,
The channel formation region of the thin film transistor does not have the ridge.
ことを特徴とする半導体装置。 The semiconductor device according to any one of claims 1 to 4 , wherein the size of the crystal grains is approximately equal to an oscillation wavelength of a pulsed laser applied to the semiconductor film.
前記非晶質半導体膜を加熱することにより結晶性半導体膜を形成し、
前記結晶性半導体膜にパルス発振型のレーザ光を照射することにより、格子状に整列し、
且つ隣接間で配向性が揃った結晶粒が形成されるリッジを、前記レーザ光の発振波長と同程度の間隔で整列するように形成し、
前記結晶性半導体膜を前記薄膜トランジスタのチャネル形成領域が前記配向性の揃った結晶粒からなるようにパターニングする
ことを特徴とする半導体装置の作製方法。 A metal element that promotes crystallization is selectively added to the amorphous semiconductor film,
A crystalline semiconductor film is formed by heating the amorphous semiconductor film,
By irradiating the crystalline semiconductor film with a pulse oscillation type laser beam, it is aligned in a lattice shape,
And forming ridges in which crystal grains having a uniform orientation between adjacent ones are formed so as to be aligned at intervals similar to the oscillation wavelength of the laser beam,
A method for manufacturing a semiconductor device, wherein the crystalline semiconductor film is patterned so that a channel formation region of the thin film transistor is formed of crystal grains having the same orientation.
前記非晶質半導体膜を加熱することにより結晶性半導体膜を形成し、
前記結晶性半導体膜にパルス発振型のレーザ光を照射することにより、格子状に整列し、
且つ隣接間で配向性が揃った結晶粒が形成されるリッジを、前記レーザ光の発振波長と同程度の間隔で整列するように形成し、
前記結晶性半導体膜を前記薄膜トランジスタのチャネル形成領域が前記配向性の揃った結晶粒からなり、且つ前記金属元素が添加されない半導体膜を有する容量素子を形成するようにパターニングする
ことを特徴とする半導体装置の作製方法。 A metal element that promotes crystallization is selectively added to the amorphous semiconductor film,
A crystalline semiconductor film is formed by heating the amorphous semiconductor film,
By irradiating the crystalline semiconductor film with a pulse oscillation type laser beam, it is aligned in a lattice shape,
And forming ridges in which crystal grains having a uniform orientation between adjacent ones are formed so as to be aligned at intervals similar to the oscillation wavelength of the laser beam,
A semiconductor characterized by patterning the crystalline semiconductor film so as to form a capacitor element having a semiconductor film in which a channel formation region of the thin film transistor is formed of crystal grains having the same orientation and to which the metal element is not added. Device fabrication method.
前記非晶質半導体膜に結晶化を促進する金属元素を選択的に添加し、
前記非晶質半導体膜を加熱することにより結晶性半導体膜を形成し、
前記結晶性半導体膜にパルス発振型のレーザ光を照射することにより、格子状に整列し、
且つ隣接間で配向性の揃った結晶粒が形成されるリッジを、前記レーザ光の発振波長と同程度の間隔で整列するように形成し、
前記結晶性半導体膜を前記薄膜トランジスタのチャネル形成領域が前記配向性の揃った結晶粒からなるようにパターニングする
ことを特徴とする半導体装置の作製方法。 Applying plasma treatment to the amorphous semiconductor film,
A metal element that promotes crystallization is selectively added to the amorphous semiconductor film;
A crystalline semiconductor film is formed by heating the amorphous semiconductor film,
By irradiating the crystalline semiconductor film with a pulse oscillation type laser beam, it is aligned in a lattice shape,
And forming ridges in which crystal grains having a uniform orientation between adjacent ones are formed so as to be aligned at intervals similar to the oscillation wavelength of the laser beam,
A method for manufacturing a semiconductor device, wherein the crystalline semiconductor film is patterned so that a channel formation region of the thin film transistor is formed of crystal grains having the same orientation.
前記非晶質半導体膜に結晶化を促進する金属元素を選択的に添加し、
前記非晶質半導体膜を加熱することにより結晶性半導体膜を形成し、
前記結晶性半導体膜にパルス発振型のレーザ光を照射することにより、格子状に整列し、
且つ隣接間で配向性の揃った結晶粒が形成されるリッジを、前記レーザ光の発振波長と同程度の間隔で整列するように形成し、
前記結晶性半導体膜を前記薄膜トランジスタのチャネル形成領域が前記配向性の揃った結晶粒からなり、且つ前記金属元素が添加されない半導体膜を有する容量素子を形成するようにパターニングする
ことを特徴とする半導体装置の作製方法。 Applying plasma treatment to the amorphous semiconductor film,
A metal element that promotes crystallization is selectively added to the amorphous semiconductor film;
A crystalline semiconductor film is formed by heating the amorphous semiconductor film,
By irradiating the crystalline semiconductor film with a pulse oscillation type laser beam, it is aligned in a lattice shape,
And forming ridges in which crystal grains having a uniform orientation between adjacent ones are formed so as to be aligned at intervals similar to the oscillation wavelength of the laser beam,
A semiconductor characterized by patterning the crystalline semiconductor film so as to form a capacitor element having a semiconductor film in which a channel formation region of the thin film transistor is formed of crystal grains having the same orientation and to which the metal element is not added. Device fabrication method.
希ガス元素、窒素およびアンモニアから選ばれた一種または複数種を主成分とする気体をプラズマ化した雰囲気中に、半導体膜を曝すことにより前記プラズマ処理を施す
ことを特徴とする半導体装置の作製方法。 Oite to claim 8 or 9,
A method for manufacturing a semiconductor device, wherein the plasma treatment is performed by exposing a semiconductor film in an atmosphere in which a gas mainly containing one or more kinds selected from a rare gas element, nitrogen, and ammonia is formed into a plasma .
前記薄膜トランジスタのチャネル形成領域が前記配向性の揃った結晶粒からなり、且つ前記結晶粒の結晶粒界を有さないように前記結晶性半導体膜をパターニングする
ことを特徴とする半導体装置の作製方法。 In any one of claims 6 to 10 consists grains channel formation region of the thin film transistor is uniform the orientation, and patterning the crystalline semiconductor film such that it has no crystal grain boundary of the crystal grains A method for manufacturing a semiconductor device.
前記パターニングされた結晶性半導体膜上に導電膜を形成し、
前記導電膜上に有機材料を塗布し、
前記有機材料を露光することによりマスクを形成し、
前記マスクを用いて前記導電膜をエッチングすることによりゲート電極を形成し、前記ゲート電極は隣接する前記リッジ間に形成する
ことを特徴とする半導体装置の作製方法。 In any one of Claims 6 thru | or 11 ,
Forming a conductive film on the patterned crystalline semiconductor film;
An organic material is applied on the conductive film,
Forming a mask by exposing the organic material;
The method for manufacturing a semiconductor device, wherein a gate electrode is formed by etching the conductive layer using the mask, the gate electrode is formed between the ridges adjacent.
前記導電膜をエッチングすることにより形成されたゲート電極の幅は、前記マスクの幅より細い
ことを特徴とする半導体装置の作製方法。 In claim 12 ,
A method for manufacturing a semiconductor device, wherein a width of a gate electrode formed by etching the conductive film is narrower than a width of the mask.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004215709A JP4578877B2 (en) | 2003-07-31 | 2004-07-23 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (2)
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JP2003284437 | 2003-07-31 | ||
JP2004215709A JP4578877B2 (en) | 2003-07-31 | 2004-07-23 | Semiconductor device and manufacturing method thereof |
Publications (3)
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JP2005064487A JP2005064487A (en) | 2005-03-10 |
JP2005064487A5 true JP2005064487A5 (en) | 2007-07-12 |
JP4578877B2 JP4578877B2 (en) | 2010-11-10 |
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JP2004215709A Expired - Fee Related JP4578877B2 (en) | 2003-07-31 | 2004-07-23 | Semiconductor device and manufacturing method thereof |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008135609A (en) * | 2006-11-29 | 2008-06-12 | Mitsubishi Electric Corp | Semiconductor film and thin-film transistor |
KR100982311B1 (en) | 2008-05-26 | 2010-09-15 | 삼성모바일디스플레이주식회사 | Thin film transistor, fabricating method for the same, and organic light emitting diode display device comprising the same |
JP2010157583A (en) | 2008-12-26 | 2010-07-15 | Toshiba Corp | Vertical diode and method for manufacturing same and semiconductor memory device |
KR101041141B1 (en) | 2009-03-03 | 2011-06-13 | 삼성모바일디스플레이주식회사 | organic light emitting display device and the fabricating method of the same |
KR101015849B1 (en) * | 2009-03-03 | 2011-02-23 | 삼성모바일디스플레이주식회사 | Thin film transistor, fabricating method of the thin film transistor, and organic lighting emitting diode display device comprising the same |
KR101049801B1 (en) | 2009-03-05 | 2011-07-15 | 삼성모바일디스플레이주식회사 | Method for manufacturing polycrystalline silicon layer and atomic layer deposition apparatus used therein |
KR101056428B1 (en) | 2009-03-27 | 2011-08-11 | 삼성모바일디스플레이주식회사 | Thin film transistor, manufacturing method thereof, and organic light emitting display device comprising the same |
US8247317B2 (en) * | 2009-09-16 | 2012-08-21 | Applied Materials, Inc. | Methods of solid phase recrystallization of thin film using pulse train annealing method |
KR101094295B1 (en) | 2009-11-13 | 2011-12-19 | 삼성모바일디스플레이주식회사 | Fabricating method of polysilicon, Thin film transistor, and Organic light emitting display device |
CN202661759U (en) * | 2012-05-17 | 2013-01-09 | 北京京东方光电科技有限公司 | Pixel structure, double-gate pixel structure and display device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002151410A (en) * | 2000-08-22 | 2002-05-24 | Sony Corp | Method of manufacturing crystalline semiconductor material and semiconductor device |
JP4316149B2 (en) * | 2001-02-20 | 2009-08-19 | シャープ株式会社 | Thin film transistor manufacturing method |
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2004
- 2004-07-23 JP JP2004215709A patent/JP4578877B2/en not_active Expired - Fee Related
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