JP2005049184A - Current sensor and overcurrent determination device - Google Patents

Current sensor and overcurrent determination device Download PDF

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JP2005049184A
JP2005049184A JP2003280561A JP2003280561A JP2005049184A JP 2005049184 A JP2005049184 A JP 2005049184A JP 2003280561 A JP2003280561 A JP 2003280561A JP 2003280561 A JP2003280561 A JP 2003280561A JP 2005049184 A JP2005049184 A JP 2005049184A
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current
bias
circuit
overcurrent
overcurrent determination
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Nobuhiko Tsuji
伸彦 辻
Takahiro Kudo
高裕 工藤
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Fuji Electric FA Components and Systems Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To set a threshold value of an overcurrent with high accuracy without damaging measuring resolution even if measuring range is wide. <P>SOLUTION: This current sensor is driven at a high frequency by an oscillation circuit 3, and a bias current is supplied through a bias coil 2. Output of a magnetic impedance element 1 outputting according to a measured current Im is fetched through a detection circuit 6, an amplifier circuit 7, which is converted into a digital value in an AD conversion circuit 8, compared with a set value from a setting circuit 10 in a determination circuit 9, and overcurrent determination is performed. Current sources 51,52 can be selected according to a measuring current region. Thereby, the measuring resolution of a low current region is especially enhanced since current measurement sensitivity changes by a bias magnetic field. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

この発明は、被測定電流が発生する磁界中に磁気インピーダンス素子(MI素子)を置き、このMI素子に高周波信号を印加することにより、MI素子から被測定電流に対応した測定値を得る電流センサ、およびその測定値から過電流判定を行なう過電流判定装置に関する。   The present invention provides a current sensor that obtains a measured value corresponding to a current to be measured from the MI element by placing a magneto-impedance element (MI element) in a magnetic field generated by the current to be measured and applying a high frequency signal to the MI element. And an overcurrent determination device that performs an overcurrent determination from the measured value.

被測定電流が発生する磁界の強さを検出することにより、被測定電流の大きさを非接触式に検出するMI素子として、例えば特開平06−281712号公報に開示されているアモルファスワイヤや、特開平08−330645号公報に開示されている薄膜形状のものがある。
また、MI素子を用いた電流センサとしては、例えば特許文献1に示すものがある。図4にこのような電流センサを用いた過電流判定装置の例を示す。なお、過電流判定装置は一般に、工場設備,工作機械のモータなどで過負荷保護のために用いられる。
As an MI element that detects the magnitude of the current to be measured in a non-contact manner by detecting the strength of the magnetic field generated by the current to be measured, for example, an amorphous wire disclosed in Japanese Patent Laid-Open No. 06-281712, There exists a thing of the thin film shape currently disclosed by Unexamined-Japanese-Patent No. 08-330645.
Moreover, as a current sensor using an MI element, for example, there is one shown in Patent Document 1. FIG. 4 shows an example of an overcurrent determination device using such a current sensor. Note that the overcurrent determination device is generally used for overload protection in factory equipment, machine tool motors, and the like.

図4において、1はMI素子で、その出力電圧が後述の検波回路6および増幅回路7を経て電流測定信号(電流検出値)Vmとなる。2はバイアスコイルであり、図5(a)に示すようなバイアス磁界Hbを発生することにより、導体12に流れる被測定電流Imが発生する磁界Hmに対し、一定のオフセットを与えるものである。3は数MHz程度の高周波パルスを供給する発振回路、4は固定抵抗、5はバイアスコイル2に所定の電流を注入するバイアス電流源である。6は検波回路で、一般的にダイオードおよびコンデンサからなるピークホールド回路と、電圧フォロアとから構成される。7は所定の信号増幅度を有する増幅回路である。   In FIG. 4, reference numeral 1 denotes an MI element, and its output voltage becomes a current measurement signal (current detection value) Vm through a detection circuit 6 and an amplification circuit 7 described later. Reference numeral 2 denotes a bias coil, which gives a certain offset to the magnetic field Hm generated by the measured current Im flowing through the conductor 12 by generating a bias magnetic field Hb as shown in FIG. 3 is an oscillation circuit for supplying a high frequency pulse of several MHz, 4 is a fixed resistor, and 5 is a bias current source for injecting a predetermined current into the bias coil 2. Reference numeral 6 denotes a detection circuit, which generally includes a peak hold circuit composed of a diode and a capacitor, and a voltage follower. Reference numeral 7 denotes an amplifier circuit having a predetermined signal amplification degree.

以上までが、特許文献1と等価な電流センサの構成である。図5を参照してその動作を説明する。
図5(a)は、MI素子の基本特性を示している。一般に、MI素子はこの図5(a)のように、測定電流に応じてインピーダンスZが変化する(ここでは、電流の増加とともにインピーダンスが低下している)。また、所定のバイアス磁界Hbを与えた場合、被測定電流±Imによる磁界Hmと、Hbとの合成磁界に相当するΔZ(±Hm)の変化となる。このインピーダンスZの変化を図4の抵抗4,検波回路6および増幅回路7により電圧信号に変換すると、その出力信号Vmは図5(b)のように、電流Imに比例する特性となる。
The above is the configuration of the current sensor equivalent to Patent Document 1. The operation will be described with reference to FIG.
FIG. 5A shows the basic characteristics of the MI element. In general, as shown in FIG. 5A, the impedance of the MI element changes according to the measurement current (here, the impedance decreases as the current increases). In addition, when a predetermined bias magnetic field Hb is applied, a change in ΔZ (± Hm) corresponding to a magnetic field Hm generated by the currents to be measured ± Im and a combined magnetic field of Hb occurs. When the change of the impedance Z is converted into a voltage signal by the resistor 4, the detection circuit 6 and the amplifier circuit 7 in FIG. 4, the output signal Vm has a characteristic proportional to the current Im as shown in FIG. 5B.

次に、過電流判定装置の構成と動作について、同じ図4,図5を参照して説明する。
図4において、8は電流測定信号Vmをデジタル量に変換するAD(アナログ・デジタル)変換回路、10は過電流判定のしきい値(Ith)を与える設定回路、
9はAD変換回路8と設定回路10の各出力を比較し、過電流の有無および過電流に応じた遮断時間を判定する判定回路、11は判定回路10からの遮断時間に応じて遮断信号を出力する時限回路である。つまり、過電流判定装置はこのような回路等を、先の電流センサに付加して構成される。
Next, the configuration and operation of the overcurrent determination device will be described with reference to FIGS. 4 and 5.
In FIG. 4, 8 is an AD (analog / digital) conversion circuit that converts the current measurement signal Vm into a digital quantity, 10 is a setting circuit that provides a threshold value (Ith) for overcurrent determination,
9 is a determination circuit that compares the outputs of the AD conversion circuit 8 and the setting circuit 10 to determine the presence / absence of overcurrent and a cutoff time according to the overcurrent, and 11 is a cutoff signal according to the cutoff time from the determination circuit 10. It is a timed circuit that outputs. That is, the overcurrent determination device is configured by adding such a circuit or the like to the previous current sensor.

過電流判定装置における測定電流,AD変換値および過電流判定値等の具体例を図5(c)に示す。
横軸の測定電流範囲の0〜1000%と、縦軸のAD変換レンジの0〜1000%および過電流判定範囲の0〜1000%が1対1の関係になっている。ここで、過電流のしきい値Ithは通常、定格電流(100%)付近に或る幅を持って設定される。この例では、105〜120%に設定されている。
このしきい値Ithを超えた場合、判定回路9および時限回路11はその電流値に応じて、例えば低い過電流の場合はしばらくして遮断信号を出力し、また高い過電流の場合は速やかに遮断信号を出力する動作をする。これにより、モータを過負荷などから保護する。
Specific examples of the measured current, AD conversion value, overcurrent determination value, and the like in the overcurrent determination device are shown in FIG.
0 to 1000% of the measured current range on the horizontal axis, 0 to 1000% of the AD conversion range on the vertical axis, and 0 to 1000% of the overcurrent determination range have a one-to-one relationship. Here, the overcurrent threshold value Ith is usually set with a certain width in the vicinity of the rated current (100%). In this example, it is set to 105 to 120%.
When this threshold value Ith is exceeded, the determination circuit 9 and the time limit circuit 11 output a cut-off signal after a while, for example, in the case of a low overcurrent, or promptly in the case of a high overcurrent, depending on the current value. Operates to output a shut-off signal. This protects the motor from overload and the like.

特開2001−116773号公報(第5−6頁、図5,6)Japanese Patent Laid-Open No. 2001-116773 (page 5-6, FIGS. 5 and 6)

上記のような構成では、電流測定範囲を広くすると測定分解能が低下すると言う問題がある。その結果、過電流判定装置では判定しきい値Ithの設定が困難になったり、ノイズなどの影響で電流測定信号(電流検出値)Vmが変動した場合に、過電流判定を誤るというおそれがあるだけでなく、過電流に応じた細やかな遮断時間の設定が困難になるという問題がある。
したがって、この発明の課題は、広い電流測定範囲でもその測定分解能を損なわない電流センサおよび過電流判定装置を提供することにある。
In the configuration as described above, there is a problem that the measurement resolution decreases when the current measurement range is widened. As a result, the overcurrent determination device may make it difficult to set the determination threshold value Ith, or may cause erroneous overcurrent determination when the current measurement signal (current detection value) Vm fluctuates due to noise or the like. In addition, there is a problem that it is difficult to set a fine cutoff time according to overcurrent.
Therefore, an object of the present invention is to provide a current sensor and an overcurrent determination device that do not impair the measurement resolution even in a wide current measurement range.

このような課題を解決するため、請求項1の発明では、磁気インピーダンス素子にバイアスコイルを巻回し、被測定電流が発生する磁界に応じて変化する前記磁気インピーダンス素子のインピーダンス変化から電流を検出する電流センサにおいて、前記バイアスコイルに複数の異なるバイアス電流を選択的に供給するバイアス手段を設け、検出した電流値に応じてバイアス電流を変更することを特徴とする。   In order to solve such a problem, according to the first aspect of the present invention, a bias coil is wound around the magnetic impedance element, and the current is detected from the impedance change of the magnetic impedance element that changes according to the magnetic field generated by the current to be measured. In the current sensor, bias means for selectively supplying a plurality of different bias currents to the bias coil is provided, and the bias current is changed according to the detected current value.

請求項2の発明では、磁気インピーダンス素子にバイアスコイルを巻回し、被測定電流が発生する磁界に応じて変化する前記磁気インピーダンス素子のインピーダンス変化から電流を検出する電流センサを有し、この電流センサによる検出電流値を所定値と比較して過電流判定を行なう過電流判定装置において、前記バイアスコイルに複数の異なるバイアス電流を選択的に供給するバイアス手段を設け、前記電流センサの検出電流値に応じてバイアス電流を変更することを特徴とする。   According to a second aspect of the present invention, there is provided a current sensor in which a bias coil is wound around a magnetic impedance element, and a current is detected from an impedance change of the magnetic impedance element that changes according to a magnetic field generated by a current to be measured. In the overcurrent determination device that performs an overcurrent determination by comparing the detected current value with a predetermined value, a bias unit that selectively supplies a plurality of different bias currents to the bias coil is provided, and the detected current value of the current sensor The bias current is changed accordingly.

すなわち、電流センサを構成するMI素子は、バイアス磁界により電流測定感度が変わることに着目し、測定電流領域に応じて複数の異なるバイアス電流によりバイアスコイルを駆動することで、特に低電流領域の測定分解能を高める。その結果、過電流のしきい値を高精度に設定できるだけでなく、ノイズなどの影響による誤った過電流の判定を無くすことができる。   In other words, the MI element that constitutes the current sensor pays attention to the fact that the current measurement sensitivity changes depending on the bias magnetic field, and the bias coil is driven by a plurality of different bias currents depending on the measurement current region, so that the measurement in the low current region is particularly effective. Increase resolution. As a result, it is possible not only to set the overcurrent threshold value with high accuracy, but also to eliminate erroneous overcurrent determination due to the influence of noise or the like.

この発明によれば、電流センサの測定感度を複数バイアス電流源で調整可能としたので、広い測定範囲でも測定分解能を損なうことがない。その結果、過電流のしきい値を高精度に設定できるとともに、ノイズなどの影響による誤った過電流判定を無くすことができる。   According to the present invention, since the measurement sensitivity of the current sensor can be adjusted by a plurality of bias current sources, the measurement resolution is not impaired even in a wide measurement range. As a result, the overcurrent threshold can be set with high accuracy, and erroneous overcurrent determination due to the influence of noise or the like can be eliminated.

図1はこの発明の実施の形態を示す構成図、図2はその動作説明図である。
図1からも明らかなように、これは図4に示すものに対し切換回路13およびバイアス電流源51,52を付加して構成されている。切換回路13は判定回路9の指示に従い、低バイアス電流源51および高バイアス電流源52の出力を切り換え、バイアスコイル2に与える。
バイアス電流源51,52は例えば図2(a)に示すように、異なる2つのバイアス磁界Hb1,Hb2を発生させる。これらのバイアス磁界下での、測定電流に対するMI素子のインピーダンス変化はΔZ1とΔZ2であるが、低バイアス磁界Hb1による変化の方が大きい、つまり測定感度が高いことになる。なお、インピーダンス変化を従来と同じく電圧信号に変換すると、図2(b)のようになる。
FIG. 1 is a block diagram showing an embodiment of the present invention, and FIG.
As is apparent from FIG. 1, this is configured by adding a switching circuit 13 and bias current sources 51 and 52 to that shown in FIG. The switching circuit 13 switches the outputs of the low bias current source 51 and the high bias current source 52 according to the instruction of the determination circuit 9 and supplies the output to the bias coil 2.
For example, as shown in FIG. 2A, the bias current sources 51 and 52 generate two different bias magnetic fields Hb1 and Hb2. Under these bias magnetic fields, the impedance change of the MI element with respect to the measurement current is ΔZ1 and ΔZ2, but the change due to the low bias magnetic field Hb1 is larger, that is, the measurement sensitivity is higher. When the impedance change is converted into a voltage signal as in the prior art, the result is as shown in FIG.

測定電流,AD変換値および過電流判定値等の具体例を図2(c)に示す。
バイアスコイル2への電流供給は、例えば判定回路9により測定電流0〜500%の範囲で低バイアス電流源51を選択し、測定電流500〜1000%の範囲で高バイアス電流源52を選択するものとする。この操作により、AD変換レンジの0〜1000%に対し、測定電流範囲が0〜500%、過電流判定範囲が0〜500%の関係になり、従来に比べて低電流領域の測定感度が上がる。
Specific examples of the measured current, AD conversion value, overcurrent determination value, etc. are shown in FIG.
For supplying the current to the bias coil 2, for example, the determination circuit 9 selects the low bias current source 51 in the range of the measured current 0 to 500% and selects the high bias current source 52 in the range of the measured current 500 to 1000%. And By this operation, the measurement current range is 0 to 500% and the overcurrent determination range is 0 to 500% with respect to 0 to 1000% of the AD conversion range, and the measurement sensitivity in the low current region is increased compared to the conventional case. .

したがって、従来に比べ電流測定信号VmのAD変換の分解能が上がる。よって、過電流のしきい値の設定が高精度にできるだけでなく、細やかな遮断時間の設定が可能となる。
図1,図2では2つのバイアス電流の場合について説明したが、図3のようにバイアス電流を3種類、またはそれ以上にすることができ、複数のバイアス電流を選択可能とすることで測定電流の分解能を上げることが可能となる。
Therefore, the AD conversion resolution of the current measurement signal Vm is increased as compared with the conventional case. Therefore, not only the overcurrent threshold value can be set with high accuracy, but also a fine cutoff time can be set.
1 and 2, the case of two bias currents has been described. However, as shown in FIG. 3, three or more bias currents can be used, and a plurality of bias currents can be selected to measure current. It is possible to increase the resolution.

この発明の実施の形態を示す構成図Configuration diagram showing an embodiment of the present invention 図1の動作説明図FIG. 1 is an explanatory diagram of the operation. 図1でバイアス電流源が3つの場合の動作説明図FIG. 1 is a diagram for explaining the operation when there are three bias current sources. 従来例を示す構成図Configuration diagram showing a conventional example 図4の動作説明図Operation explanatory diagram of FIG.

符号の説明Explanation of symbols

1…MI素子、2…バイアスコイル、3…発振回路、4…抵抗、5…バイアス電流源、51…低バイアス電流源、52…高バイアス電流源、6…検波回路、7…増幅回路、8…AD変換回路、9…判定回路、10…設定回路、11…時限回路、12…導体、13…切換回路。
DESCRIPTION OF SYMBOLS 1 ... MI element, 2 ... Bias coil, 3 ... Oscillator circuit, 4 ... Resistance, 5 ... Bias current source, 51 ... Low bias current source, 52 ... High bias current source, 6 ... Detection circuit, 7 ... Amplifier circuit, 8 ... AD converter circuit, 9 ... judgment circuit, 10 ... setting circuit, 11 ... time limit circuit, 12 ... conductor, 13 ... switching circuit.

Claims (2)

磁気インピーダンス素子にバイアスコイルを巻回し、被測定電流が発生する磁界に応じて変化する前記磁気インピーダンス素子のインピーダンス変化から電流を検出する電流センサにおいて、
前記バイアスコイルに複数の異なるバイアス電流を選択的に供給するバイアス手段を設け、検出した電流値に応じてバイアス電流を変更することを特徴とする電流センサ。
In a current sensor that winds a bias coil around a magnetic impedance element and detects a current from an impedance change of the magnetic impedance element that changes according to a magnetic field generated by a current to be measured.
A current sensor characterized in that bias means is provided for selectively supplying a plurality of different bias currents to the bias coil, and the bias current is changed according to the detected current value.
磁気インピーダンス素子にバイアスコイルを巻回し、被測定電流が発生する磁界に応じて変化する前記磁気インピーダンス素子のインピーダンス変化から電流を検出する電流センサを有し、この電流センサによる検出電流値を所定値と比較して過電流判定を行なう過電流判定装置において、
前記バイアスコイルに複数の異なるバイアス電流を選択的に供給するバイアス手段を設け、前記電流センサの検出電流値に応じてバイアス電流を変更することを特徴とする過電流判定装置。
A bias coil is wound around the magnetic impedance element, and a current sensor is provided for detecting current from the impedance change of the magnetic impedance element that changes according to the magnetic field generated by the current to be measured. In the overcurrent determination device that performs overcurrent determination in comparison with
An overcurrent determination device, characterized in that bias means is provided for selectively supplying a plurality of different bias currents to the bias coil, and the bias current is changed according to the detected current value of the current sensor.
JP2003280561A 2003-07-28 2003-07-28 Current sensor and overcurrent determination device Pending JP2005049184A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105510686A (en) * 2015-12-11 2016-04-20 谭焕玲 Current measurement apparatus and method
US9638767B2 (en) 2011-09-19 2017-05-02 Denso Corporation Current sensor and attachment structure of the same
WO2020059898A1 (en) * 2018-09-18 2020-03-26 전자부품연구원 Magnetic sensor-based current sensor using variable bias power supply for smart grid

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9638767B2 (en) 2011-09-19 2017-05-02 Denso Corporation Current sensor and attachment structure of the same
CN105510686A (en) * 2015-12-11 2016-04-20 谭焕玲 Current measurement apparatus and method
WO2020059898A1 (en) * 2018-09-18 2020-03-26 전자부품연구원 Magnetic sensor-based current sensor using variable bias power supply for smart grid

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