JP2005033774A - 金属膜の内部応力を用いた薄膜バルク音響共振器の製造方法および共振器 - Google Patents
金属膜の内部応力を用いた薄膜バルク音響共振器の製造方法および共振器 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 239000010408 film Substances 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 30
- 239000002184 metal Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 238000000059 patterning Methods 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims description 30
- 238000005452 bending Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 19
- 230000037303 wrinkles Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 8
- 230000002265 prevention Effects 0.000 claims description 6
- 244000126211 Hericium coralloides Species 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 11
- 239000000126 substance Substances 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 description 9
- 238000010897 surface acoustic wave method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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Abstract
【解決手段】半導体基板の上面に犠牲層110を積層するステップ(a)、犠牲層の所定領域を取り除くステップ(b)、犠牲層の上面に金属膜を蒸着し、パターニングを行って下部電極層120を形成するステップ(c)、下部電極層の上面に圧電物質を蒸着しパターニングを行って圧電層130を形成するステップ(d)、圧電層の上面に金属膜を蒸着しパターニングを行って上部電極層140を形成するステップ(e)、を含む。上部および下部電極用の金属膜の蒸着時に所定の上方向の応力が発するように蒸着圧力および蒸着パワーのうち少なくともいずれか1つを調整する。支持体を必要としないのでこれを製造するための工程が簡単になる。
【選択図】 図4E
Description
・半導体基板の上面に第1層を積層するステップ、
・前記第1層の所定領域を取り除くステップ、
・前記所定の領域が取り除かれた第1層の上面に第1金属膜を蒸着し、前記第1層の形状に基づいた第1金属膜によるパターニングを行って前記下部電極層を形成するステップ、
・前記下部電極層の上面に圧電物質を蒸着し、前記下部電極層の形状に基づいた圧電物質に対するパターニングを行って圧電層を形成するステップ、
・前記圧電層の上面に第2金属膜を蒸着し、前記圧電層の形状に基づいた第2金属膜に対するパターニングを行って上部電極層を形成するステップ。
・前記上部電極層の前記圧電層に対応する部位に所定の第1曲げ防止凹溝を形成するステップと、
・前記第1曲げ防止凹溝の形成に先立ち、前記下部電極層をパターニングして第2曲げ防止凹溝を形成するステップと、
をさらに含む薄膜バルク音響共振器の製造方法を提供する。
・半導体基板、
・第1領域は前記半導体基板の信号ラインと電気的に接触し、第2領域は前記半導体基板と所定の高さで離隔するように形成された下部電極層、
・前記下部電極層の第2領域の上面に前記下部電極層の形状に基づいて形成された圧電層、
・前記圧電層の上面に前記圧電層の形状に基づいて形成された上部電極層。
110 犠牲層
120 下部電極層
130 圧電層
140 上部電極層
150 圧電共振構造物
A 伝導領域
B 支持領域
C 共振領域
360a、360b、360c 曲げ防止凹溝
Claims (11)
- 半導体基板の上面に第1層を積層するステップと、
前記第1層の所定領域を取り除くステップと、
前記所定の領域が取り除かれた前記第1層の上面に第1金属膜を蒸着し、前記第1層の形状に基づいた第1金属膜によるパターニングを行って下部電極層を形成するステップと、
前記下部電極層の上面に圧電物質を蒸着し、前記下部電極層の形状に基づいた圧電物質に対するパターニングを行って圧電層を形成するステップと、
前記圧電層の上面に第2金属膜を蒸着し、前記圧電層の形状に基づいた第2金属膜に対するパターニングを行って上部電極層を形成するステップと、を含み、
前記下部電極用の第1金属膜と前記上部電極用の第2金属膜の蒸着時に所定の上方向の応力が発生するように、蒸着圧力および蒸着パワーのうち少なくともいずれか1つを調整することを特徴とする、薄膜バルク音響共振器の製造方法。 - 前記第1層において、前記第1層が取り除かれた第1領域および前記圧電層が積層される第2領域との間にある第3領域をパターニングし、所定のしわを形成するステップをさらに含むことを特徴とする、請求項1に記載の薄膜バルク音響共振器の製造方法。
- 前記所定のしわの断面形状は、櫛の歯状および/または連続する半球状であることを特徴とする、請求項2に記載の薄膜バルク音響共振器の製造方法。
- 前記上部電極層の前記圧電層に対応する部位に所定の第1曲げ防止凹溝を形成するステップと、
前記第1曲げ防止凹溝の形成に先立ち、前記下部電極層をパターニングして第2曲げ防止凹溝を形成するステップと、
をさらに含むことを特徴とする、請求項1に記載の薄膜バルク音響共振器の製造方法。 - 前記下部電極層の形成後に前記第1層を取り除くステップを更に含むことを特徴とする、請求項1に記載の薄膜バルク音響共振器の製造方法。
- 半導体基板と、
第1領域は前記半導体基板の信号ラインと電気的に接触し、第2領域は前記半導体基板から所定の高さで離隔するように形成された下部電極層と、
前記下部電極層の第2領域の上面に前記下部電極層の形状に基づいて形成された圧電層と、
前記圧電層の上面に前記圧電層の形状に基づいて形成された上部電極層と、を含むことを特徴とする薄膜バルク音響共振器。 - 前記下部電極層において、前記第1領域と前記圧電層が積層される第2領域との間にある第3領域には、所定のしわが形成されていることを特徴とする、請求項6に記載の薄膜バルク音響共振器。
- 前記所定のしわの断面形状は、櫛の歯状および/または連続する半球状であることを特徴とする請求項7に記載の薄膜バルク音響共振器。
- 前記上部電極層の前記圧電層に対応する部位に所定の第1曲げ防止凹溝が形成されていることを特徴とする、請求項6に記載の薄膜バルク音響共振器。
- 前記下部電極層の前記圧電層に対応する部位に、所定の第2曲げ防止凹溝が形成されていることを特徴とする、請求項6に記載の薄膜バルク音響共振器。
- 前記下部電極層は片持ち梁状であることを特徴とする請求項6に記載の薄膜バルク音響共振器。
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JPH0878735A (ja) | 1994-09-01 | 1996-03-22 | Matsushita Electric Ind Co Ltd | 強誘電体薄膜装置 |
JP3514207B2 (ja) | 2000-03-15 | 2004-03-31 | 株式会社村田製作所 | 強誘電体薄膜素子ならびにセンサ、および強誘電体薄膜素子の製造方法 |
US6709776B2 (en) * | 2000-04-27 | 2004-03-23 | Tdk Corporation | Multilayer thin film and its fabrication process as well as electron device |
US6392524B1 (en) * | 2000-06-09 | 2002-05-21 | Xerox Corporation | Photolithographically-patterned out-of-plane coil structures and method of making |
US6515558B1 (en) * | 2000-11-06 | 2003-02-04 | Nokia Mobile Phones Ltd | Thin-film bulk acoustic resonator with enhanced power handling capacity |
US6521100B2 (en) * | 2001-02-02 | 2003-02-18 | Nokia Mobile Phones Ltd | Method of producing a piezoelectric thin film and bulk acoustic wave resonator fabricated according to the method |
WO2002093740A1 (fr) * | 2001-05-11 | 2002-11-21 | Ube Electronics, Ltd. | Resonateur d'onde acoustique en volume a couche mince |
JP2003017964A (ja) | 2001-07-04 | 2003-01-17 | Hitachi Ltd | 弾性波素子の製造方法 |
US6794737B2 (en) * | 2001-10-12 | 2004-09-21 | Xerox Corporation | Spring structure with stress-balancing layer |
WO2004013893A2 (en) * | 2002-08-01 | 2004-02-12 | Georgia Tech Research Corporation | Piezo electric on seminconductor on- insulator resonator |
KR100599083B1 (ko) * | 2003-04-22 | 2006-07-12 | 삼성전자주식회사 | 캔틸레버 형태의 압전 박막 공진 소자 및 그 제조방법 |
US7492241B2 (en) * | 2005-06-02 | 2009-02-17 | The Regents Of The University Of California | Contour-mode piezoelectric micromechanical resonators |
-
2003
- 2003-05-22 KR KR10-2003-0032651A patent/KR100470708B1/ko active IP Right Grant
-
2004
- 2004-04-08 DE DE602004023997T patent/DE602004023997D1/de not_active Expired - Lifetime
- 2004-04-08 EP EP04252122A patent/EP1480335B1/en not_active Expired - Lifetime
- 2004-05-05 US US10/838,326 patent/US7671427B2/en active Active
- 2004-05-24 JP JP2004153486A patent/JP3985965B2/ja not_active Expired - Lifetime
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2010
- 2010-01-08 US US12/684,454 patent/US7939356B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2008084578A1 (ja) * | 2006-12-25 | 2010-04-30 | 株式会社村田製作所 | 圧電薄膜共振子 |
JP4853523B2 (ja) * | 2006-12-25 | 2012-01-11 | 株式会社村田製作所 | 圧電薄膜共振子 |
Also Published As
Publication number | Publication date |
---|---|
KR100470708B1 (ko) | 2005-03-10 |
US7671427B2 (en) | 2010-03-02 |
EP1480335A3 (en) | 2004-12-01 |
EP1480335B1 (en) | 2009-11-11 |
US20100132174A1 (en) | 2010-06-03 |
DE602004023997D1 (de) | 2009-12-24 |
KR20040100348A (ko) | 2004-12-02 |
EP1480335A2 (en) | 2004-11-24 |
US7939356B2 (en) | 2011-05-10 |
US20050001274A1 (en) | 2005-01-06 |
JP3985965B2 (ja) | 2007-10-03 |
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