JP2005005321A5 - - Google Patents
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- JP2005005321A5 JP2005005321A5 JP2003164085A JP2003164085A JP2005005321A5 JP 2005005321 A5 JP2005005321 A5 JP 2005005321A5 JP 2003164085 A JP2003164085 A JP 2003164085A JP 2003164085 A JP2003164085 A JP 2003164085A JP 2005005321 A5 JP2005005321 A5 JP 2005005321A5
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003164085A JP4371710B2 (ja) | 2003-06-09 | 2003-06-09 | 半導体基体、半導体装置及びこれらの製造方法 |
| TW093115344A TWI242232B (en) | 2003-06-09 | 2004-05-28 | Semiconductor substrate, semiconductor device, and method of manufacturing the same |
| US10/857,881 US7164183B2 (en) | 2003-06-09 | 2004-06-02 | Semiconductor substrate, semiconductor device, and method of manufacturing the same |
| EP04013491A EP1487007A2 (en) | 2003-06-09 | 2004-06-08 | Semiconductor substrate, semiconductor device, and method of manufacturing the same |
| KR1020040042219A KR20040105627A (ko) | 2003-06-09 | 2004-06-09 | 반도체기판, 반도체디바이스 및 이들의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003164085A JP4371710B2 (ja) | 2003-06-09 | 2003-06-09 | 半導体基体、半導体装置及びこれらの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005005321A JP2005005321A (ja) | 2005-01-06 |
| JP2005005321A5 true JP2005005321A5 (ja) | 2006-07-06 |
| JP4371710B2 JP4371710B2 (ja) | 2009-11-25 |
Family
ID=34090994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003164085A Expired - Fee Related JP4371710B2 (ja) | 2003-06-09 | 2003-06-09 | 半導体基体、半導体装置及びこれらの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4371710B2 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7019380B2 (en) | 2003-06-20 | 2006-03-28 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US7759739B2 (en) * | 2005-10-27 | 2010-07-20 | International Business Machines Corporation | Transistor with dielectric stressor elements |
| US7476938B2 (en) * | 2005-11-21 | 2009-01-13 | International Business Machines Corporation | Transistor having dielectric stressor elements at different depths from a semiconductor surface for applying shear stress |
| JP4677331B2 (ja) | 2005-11-30 | 2011-04-27 | エルピーダメモリ株式会社 | 島状の分散構造を備えた半導体チップおよびその製造方法 |
| US20240088157A1 (en) * | 2022-09-12 | 2024-03-14 | Globalfoundries U.S. Inc. | Semiconductor device structures isolated by porous semiconductor material |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4849370A (en) * | 1987-12-21 | 1989-07-18 | Texas Instruments Incorporated | Anodizable strain layer for SOI semiconductor structures |
| JPH098047A (ja) * | 1995-06-26 | 1997-01-10 | Toshiba Corp | 半導体装置 |
| JP3676910B2 (ja) * | 1997-07-30 | 2005-07-27 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体装置及び半導体アイランドの形成方法 |
| JP2000150634A (ja) * | 1998-11-13 | 2000-05-30 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2000307112A (ja) * | 1999-04-26 | 2000-11-02 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US6476445B1 (en) * | 1999-04-30 | 2002-11-05 | International Business Machines Corporation | Method and structures for dual depth oxygen layers in silicon-on-insulator processes |
| KR100304713B1 (ko) * | 1999-10-12 | 2001-11-02 | 윤종용 | 부분적인 ｓｏｉ 구조를 갖는 반도체소자 및 그 제조방법 |
| JP4698793B2 (ja) * | 2000-04-03 | 2011-06-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2002217410A (ja) * | 2001-01-16 | 2002-08-02 | Hitachi Ltd | 半導体装置 |
| JP5073136B2 (ja) * | 2001-08-24 | 2012-11-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4173658B2 (ja) * | 2001-11-26 | 2008-10-29 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| JP2004103613A (ja) * | 2002-09-04 | 2004-04-02 | Toshiba Corp | 半導体装置とその製造方法 |
| JP4289864B2 (ja) * | 2002-10-22 | 2009-07-01 | シャープ株式会社 | 半導体装置及び半導体装置製造方法 |
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2003
- 2003-06-09 JP JP2003164085A patent/JP4371710B2/ja not_active Expired - Fee Related