JP2004531884A - シリコンセンサの製造方法及びシリコンセンサ - Google Patents

シリコンセンサの製造方法及びシリコンセンサ Download PDF

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Publication number
JP2004531884A
JP2004531884A JP2002579819A JP2002579819A JP2004531884A JP 2004531884 A JP2004531884 A JP 2004531884A JP 2002579819 A JP2002579819 A JP 2002579819A JP 2002579819 A JP2002579819 A JP 2002579819A JP 2004531884 A JP2004531884 A JP 2004531884A
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JP
Japan
Prior art keywords
spring element
etching
silicon
crystal
wafer
Prior art date
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Pending
Application number
JP2002579819A
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English (en)
Japanese (ja)
Inventor
クイスマ ヘイッキ
ラフデンペラ ユハ
ムティカイネン リスト
Original Assignee
ヴェーテーイー テクノロジーズ オサケユキチュア
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヴェーテーイー テクノロジーズ オサケユキチュア filed Critical ヴェーテーイー テクノロジーズ オサケユキチュア
Publication of JP2004531884A publication Critical patent/JP2004531884A/ja
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0817—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for pivoting movement of the mass, e.g. in-plane pendulum

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP2002579819A 2001-03-21 2002-03-21 シリコンセンサの製造方法及びシリコンセンサ Pending JP2004531884A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20010582A FI113704B (fi) 2001-03-21 2001-03-21 Menetelmä piianturin valmistamiseksi sekä piianturi
PCT/FI2002/000241 WO2002082100A1 (en) 2001-03-21 2002-03-21 Method for manufacturing a silicon sensor and a silicon sensor

Publications (1)

Publication Number Publication Date
JP2004531884A true JP2004531884A (ja) 2004-10-14

Family

ID=8560806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002579819A Pending JP2004531884A (ja) 2001-03-21 2002-03-21 シリコンセンサの製造方法及びシリコンセンサ

Country Status (7)

Country Link
US (2) US6998059B2 (ko)
EP (1) EP1390765A1 (ko)
JP (1) JP2004531884A (ko)
KR (1) KR20040008143A (ko)
CN (1) CN1511259A (ko)
FI (1) FI113704B (ko)
WO (1) WO2002082100A1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006177771A (ja) * 2004-12-22 2006-07-06 Oki Electric Ind Co Ltd 加速度センサの構造及びその製造方法
JP2007125693A (ja) * 2005-11-04 2007-05-24 Infineon Technologies Sensonor As マイクロメカニカルデバイス、共鳴構造、およびマイクロメカニカルデバイスの励起方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6939475B2 (en) * 2001-08-31 2005-09-06 Daishinku Corporation Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same
JP2005033173A (ja) * 2003-06-16 2005-02-03 Renesas Technology Corp 半導体集積回路装置の製造方法
FI116544B (fi) * 2004-12-31 2005-12-15 Vti Technologies Oy Värähtelevä mikromekaaninen kulmanopeusanturi
US7279114B1 (en) * 2006-05-08 2007-10-09 Macronix International Co., Ltd. Method for stabilizing etching performance
DE102006052630A1 (de) * 2006-10-19 2008-04-24 Robert Bosch Gmbh Mikromechanisches Bauelement mit monolithisch integrierter Schaltung und Verfahren zur Herstellung eines Bauelements
DE102008041757B4 (de) * 2008-09-02 2019-01-03 Robert Bosch Gmbh Herstellungsverfahren für eine Rotationssensorvorrichtung und Rotationssensorvorrichtung
DE102014200380A1 (de) * 2014-01-13 2015-07-16 Robert Bosch Gmbh Herstellungsverfahren für ein mikromechanisches Bauteil und mikromechanisches Bauteil
US10777839B2 (en) * 2014-03-28 2020-09-15 Infineon Technologies Ag Method for forming a battery element, a battery element and a battery
CN106871885A (zh) * 2015-12-10 2017-06-20 上海矽睿科技有限公司 用于mems传感器的折叠弹簧组以及mems传感器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922756A (en) * 1988-06-20 1990-05-08 Triton Technologies, Inc. Micro-machined accelerometer
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
US5484073A (en) 1994-03-28 1996-01-16 I/O Sensors, Inc. Method for fabricating suspension members for micromachined sensors
US5834864A (en) 1995-09-13 1998-11-10 Hewlett Packard Company Magnetic micro-mover
DE19603829A1 (de) * 1996-02-02 1997-08-07 Daimler Benz Ag Verfahren zur Herstellung von mikromechanischen Strukturen aus Silizium
JP3301334B2 (ja) * 1997-01-31 2002-07-15 三菱電機株式会社 センサ素子及びその製造方法
FR2763694B1 (fr) * 1997-05-23 1999-07-30 Sextant Avionique Micro-accelerometre a resonateur capacitif
EP1312943A1 (en) * 2001-11-14 2003-05-21 STMicroelectronics S.r.l. Method for the manufacture of electromagnetic radiation reflecting devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006177771A (ja) * 2004-12-22 2006-07-06 Oki Electric Ind Co Ltd 加速度センサの構造及びその製造方法
JP4540467B2 (ja) * 2004-12-22 2010-09-08 Ｏｋｉセミコンダクタ株式会社 加速度センサの構造及びその製造方法
JP2007125693A (ja) * 2005-11-04 2007-05-24 Infineon Technologies Sensonor As マイクロメカニカルデバイス、共鳴構造、およびマイクロメカニカルデバイスの励起方法

Also Published As

Publication number Publication date
WO2002082100A1 (en) 2002-10-17
FI20010582A (fi) 2002-09-22
FI20010582A0 (fi) 2001-03-21
FI113704B (fi) 2004-05-31
US20060046329A1 (en) 2006-03-02
US6998059B2 (en) 2006-02-14
EP1390765A1 (en) 2004-02-25
US20040074301A1 (en) 2004-04-22
KR20040008143A (ko) 2004-01-28
CN1511259A (zh) 2004-07-07

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