JP2004273690A - Led element for minimum optical source, and its manufacturing method - Google Patents

Led element for minimum optical source, and its manufacturing method Download PDF

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Publication number
JP2004273690A
JP2004273690A JP2003061364A JP2003061364A JP2004273690A JP 2004273690 A JP2004273690 A JP 2004273690A JP 2003061364 A JP2003061364 A JP 2003061364A JP 2003061364 A JP2003061364 A JP 2003061364A JP 2004273690 A JP2004273690 A JP 2004273690A
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Japan
Prior art keywords
silicon case
led chip
case
wiring hole
led
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JP2003061364A
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Japanese (ja)
Inventor
Kenichi Kondo
健一 近藤
Yoshiaki Yasuda
喜昭 安田
Masanao Tani
雅直 谷
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Priority to JP2003061364A priority Critical patent/JP2004273690A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problems that the entire arrangement of a conventional LED element is voluminous, and that a light beam emitted outside is thick and lacks in sharpness, resulting in disenabling, for example, clear reading in scanning. <P>SOLUTION: Using a substrate 10 as a material, a lower silicon case 2 and an upper silicon case 3 are formed with microprocessing technology, which are then subjected to anode bonding with an LED chip 4 being sealed therein. Thus, an LED element 1 for a minimum light source is provided, wherein light is emitted from a hole 3b for taking out light formed in the upper silicon case 3 with the same microprocessing technology. Thus, the volume of the entire element is reduced and an emitted light beam is sharpened. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は発光ダイオードとも称されているＬＥＤ素子に関するものであり、詳細には高精度な位置検出、或いは、信号の読みとりなどを可能とするべく、発光面積を微細化すると共に、発光ビームの放射角も狭く設定し、それに伴い、製品寸法も微細化したＬＥＤ素子の構成に係るものである。
【０００２】
【従来の技術】
従来のこの種のＬＥＤ素子の構成としては、例えばガラス−エポキシ基材としたプリント基板で、取付端子、素子取付パッド、配線パッドなどを形成したＬＥＤ基板を形成しておき、前記素子取付パッド上にＬＥＤチップをマウントし、このＬＥＤチップと配線パッド間を金線でワイヤーボンドした後に、前記ＬＥＤチップを透明エポキシ樹脂のケースで覆い密閉したものがある。（例えば、特許文献１参照。）。
【０００３】
【特許文献１】
特開２０００−２１６４４０号公報（図１、図２）
【０００４】
【発明が解決しようとする課題】
しかしながら、上記した従来のＬＥＤ素子においては、ＬＥＤチップそのものが比較的に広い角度で光を放射するものであるので、前記した透明エポキシ樹脂のケースから外部に放出される時点では既に広い範囲に放散され、例えばバーコードの読み取り用光源として採用する際にはコントラストの低下などを生じやすく、これによりバーコードの一層の微細化を図るときには、読み取り精度が不足する、若しくは、読み取り不能となるなどの問題点を生じるものとなっていた。また、位置制御用エンコーダーとして採用する際においても、この光源と同一平面上に隣接して設置される受光素子に光モレを生じるものとなって、Ｓ／Ｎ比を低下させ、測定精度が低下するなどの問題点も生じている。
【０００５】
【課題を解決するための手段】
本発明は、前記した従来の課題を解決するための具体的手段として、下部シリコンケースと上部シリコンケースとＬＥＤチップとから成り、前記下部シリコンケースまたは上部シリコンケースの少なくとも一方には前記ＬＥＤチップを収納する凹部が設けられると共に、前記下部シリコンケースには前記ＬＥＤチップがマウントされる下側搭載部から前記上部シリコンケースとの接合面にかけてベース端子を敷設し、前記下部シリコンケースの下側搭載部に相対する位置には上側搭載部と前記ＬＥＤチップの発光面に対応する位置に光取出し穴と前記ＬＥＤチップの前記発光面側に設けられるリード端子に対応する位置に設けられるリード配線穴と前記ベース端子の前記接合面に延設された位置に対応するベース配線穴とが設けられた上部シリコンケースが被着され陽極接合で接合され前記光取出し穴はレンズ若しくは透明部材で封止され、前記リード配線穴と前記ベース配線穴とには導電性部材が注入されて封止と電気的接続が行われていることを特徴とする極小光源用ＬＥＤ素子およびその製造方法を提供することで課題を解決するものである。
【０００６】
【発明の実施の形態】
つぎに、本発明を図に示す実施形態に基づいて詳細に説明する。図１〜図２に符号１で示すものは本発明に係る極小光源用ＬＥＤ素子であり、この極小光源用ＬＥＤ素子１は、下部シリコンケース２と、上部シリコンケース３と、底面と上面とに電極を有するＬＥＤチップ４とからで構成されている。尚、前記ＬＥＤチップ４においては発光色などの設定は自在である。
【０００７】
前記下部シリコンケース２、および、上部シリコンケース３の形成に当たっては、ホトリソ法など、トランジスタ、ＩＣなどをシリコン基板上に形成するときと同様な微細加工技術を採用するものであり、例えば、前記下部シリコンケース２の形成に当たっては、前記したシリコン基板へのレジスト膜の形成と、弗酸などによるエッチングとが行われ、図１に示すように下側凹部２ａが形成されている。この下側凹部２ａはＬＥＤチップ４がマウントされる下側搭載部となるものである。
【０００８】
前記下側凹部２ａが形成された後には、この下側凹部２ａの底面から下部シリコンケース２の上面に渡りアルミ電極２ｂが設けられ、更に、このアルミ電極２ｂの電気的接触が行われる部分を除いては酸化シリコン（ＳｉＯ２）などによる絶縁膜２ｃがＣＶＤ法などにより２０００〜３０００Åの膜厚に設けられ、例えば、後に説明する上部シリコンケース３との接合時に電気的に漏洩が生じるのを防止している。
【０００９】
そして、前記下側凹部２ａの底面に敷設されたアルミ電極２ｂ上には、銀ペーストなどによりＬＥＤチップ４がダイボンディングされている。このときに、前記ＬＥＤチップ４の上面側の電極にはハンダなどによりバンプ４ａが形成され、後に説明する上部シリコンケース３の取り付けに備えられている。
【００１０】
前記上部シリコンケース３は、前記下部シリコンケース２と同様に、シリコン基板により形成されるものであり、その形成されるときの手法も下部シリコンケース２と同様にホトリソ法など、半導体を形成するときとほぼ同様な微細加工技術が採用される。
【００１１】
前記上部シリコンケース３には、下部シリコンケース２の下側凹部２ａに対応する位置に上側凹部３ａが設けられ、この上側凹部３ａも下側凹部２ａと同様にホトリソ法、エッチング法などにより形成され、加えて、この上部シリコンケース３に対しては、光取り出し穴３ｂ、ＬＥＤ下面電極接続穴３ｃ、ＬＥＤ上面電極接続穴３ｄが設けられている。なお、上側凹部３ａは前記ＬＥＤチップ４がマウントされる下側搭載部に相対する位置に設けられる上側搭載部となるものである。
【００１２】
前記光取り出し穴３ｂ、ＬＥＤ下面電極接続穴３ｃ、ＬＥＤ上面電極接続穴３ｄも、下側凹部２ａ、上側凹部３ａなどと同様な微細加工技術で形成されるものであり、図２にも示すように、前記光取り出し穴３ｂは下側凹部２ａ内にダイマウントされたＬＥＤチップ４の、発光を行う部位に対応する位置に設けられている。
【００１３】
また、前記ＬＥＤ下面電極接続穴３ｃは、前記下部シリコンケース２の上面に敷設されているアルミ電極２ｂの絶縁膜２ｃが設けられていない部分に対応して設けられ、前記ＬＥＤ上面電極接続穴３ｄは、前記ＬＥＤチップ４のバンプ４ａの位置に対応して設けられている。
【００１４】
このようにして、各部が加工された前記上部シリコンケース３は前記下部シリコンケース２に所定位置として重ね合わされ（図３参照）、例えば３００〜５００℃に加熱し、両シリコンケース２、３に１ｋＶ程度の電圧を印可したときの静電引力で界面結合させる陽極接合で接合が行われる。しかる後に、前記光取り出し穴にはレンズ５が貼着など適宜な手段により取付けられ、ＬＥＤチップ４からの光を、例えば平行光などとして外部に取り出す。
【００１５】
また、前記ＬＥＤ下面電極接続穴３ｃとＬＥＤ上面電極接続穴３ｄとには、例えば銀ペースト６が充填され、更に、前記銀ペースト６中にはリード線７が埋め込まれて、下部シリコンケース２と上部シリコンケース３とで密閉されたＬＥＤチップ４に外部から給電可能としている。
【００１６】
図４は、前記上部シリコンケース３をシリコン基板１０により形成するときの工程の例を示すものであり、まず、上記にも説明したように上側凹部３ａをホトリソ法、ドライエッチング法などによりシリコン基板１０上にマトリックス状の配置などとして複数を形成する。
【００１７】
その後に、前記上側凹部３ａに対し適正となる位置に、前記光取り出し穴３ｂ、ＬＥＤ下面電極接続穴３ｃ、ＬＥＤ上面電極接続穴３ｄを上記と同様にホトリソ法、ドライエッチング法などにより形成し、その後にダイシングマシンなどにより切断し、個別に分離を行えば、所望の構成とした上部シリコンケース３が得られるものとなる。
【００１８】
次いで、上記の構成とした本発明の極小光源用ＬＥＤ素子１の作用、効果について説明する。本発明によりＬＥＤチップ４を収納するケースを下部シリコンケース２、上部シリコンケース３のようにシリコン基板１０に対する微細加工技術で形成したことで、ＬＥＤチップ４の寸法に極めて近い寸法のケースの形成を可能とし、更に、光取り出し穴３ｂにおいても、高精度で且つ小径のものの実現を可能とするものである。
【００１９】
よって、ＬＥＤ素子全体の寸法が小型化すると共に、光取り出し穴３ｂ、および、レンズ５を介して得られる光線もビーム径の細いものとすることができ、例えばバーコードの読みとり、或いは、原稿の走査などの用途においても一層に精細な精度が得られるものとなる。
【００２０】
なお、上記実施形態においては、下部シリコンケース２と上部シリコンケース３の双方に凹部を設けてＬＥＤチップ４を収納する構成としたが、本発明はこれを限定するものではなく、何れか一方のケースにのみ凹部を設け、他方のケースを平板状とすることも可能である。この場合、凹部に相対する平坦な位置は搭載部とされるものであり、この搭載部に相当する下部シリコンケース２、或いは、上部シリコンケース３には、上記に説明した実施形態の下側凹部２ａに設けられていたアルミ電極２ｂ、或いは、上側凹部３ａに設けられていた光取り出し穴３ｂ、ＬＥＤ下面電極接続穴３ｃなどが形成されて同様な構成とされている。
【００２１】
【発明の効果】
以上に説明したように本発明により、下部シリコンケースと上部シリコンケースとＬＥＤチップとから成り、前記下部シリコンケースまたは上部シリコンケースの少なくとも一方には前記ＬＥＤチップを収納する凹部が設けられると共に、前記下部シリコンケースには前記ＬＥＤチップがマウントされる下部搭載部から前記上部シリコンケースとの接合面にかけてベース端子を敷設し、前記下部シリコンケースの下側搭載部に相対する位置には上側搭載部と前記ＬＥＤチップの発光面に対応する位置に光取出し穴と前記ＬＥＤチップの前記発光面側に設けられるリード端子に対応するリード端子に対応する位置に設けられるリード配線穴と前記ベース端子の前記接合面に延設された位置に対応するベース配線穴とが設けられた上部シリコンケースが被着され陽極接合で接合され前記光取出し穴はレンズ若しくは透明部材で封止され、前記リード配線穴と前記ベース配線穴とには導電性部材が注入されて封止と電気的接合とが行われている極小光源用ＬＥＤ素子としたことで、ＬＥＤ素子全体が小型化されると共に、得られる光のビームも細かく先鋭で且つ、横方向への光モレのない光源とできるので、バーコードリーダやエンコーダとしての読み取り精度を格段に向上させるという極めて優れた効果を奏するものとなる。更に、完全に封止された構造とできるので、湿度、有害ガスなどの外部環境に対する耐性も向上し信頼性も確保できるものとなる。
【図面の簡単な説明】
【図１】本発明に係る極小光源用ＬＥＤ素子のケース取り付けに係る製造工程を示す説明図である。
【図２】同じく本発明に係る極小光源用ＬＥＤ素子を示す平面図である。
【図３】図２のＡ−Ａ線に沿う断面図である。
【図４】上部シリコンケースの製造工程を示す説明図である。
【符号の説明】
１……極小光源用ＬＥＤ素子
２……下部シリコンケース
２ａ……下側凹部（下側搭載部）
２ｂ……アルミ電極
２ｃ……絶縁膜
３……上部シリコンケース
３ａ……上側凹部（上側搭載部）
３ｂ……光取り出し穴
３ｃ……ＬＥＤ下面電極接続穴
３ｄ……ＬＥＤ上面電極接続穴
４……ＬＥＤチップ
４ａ……バンプ
５……レンズ
６……銀ペースト
７……リード線
１０……シリコン基板[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an LED element, also called a light emitting diode. Specifically, the present invention relates to an LED element which has a small light emitting area and emits a light emitting beam in order to enable highly accurate position detection or signal reading. The present invention relates to a configuration of an LED element in which the corners are set to be narrow and the product dimensions are also reduced accordingly.
[0002]
[Prior art]
As a configuration of a conventional LED element of this type, for example, an LED board on which a mounting terminal, an element mounting pad, a wiring pad, and the like are formed on a printed board made of a glass-epoxy base material is formed, After mounting an LED chip on the LED chip and wire bonding between the LED chip and the wiring pad with a gold wire, the LED chip is covered with a transparent epoxy resin case and sealed. (For example, refer to Patent Document 1).
[0003]
[Patent Document 1]
JP-A-2000-216440 (FIGS. 1 and 2)
[0004]
[Problems to be solved by the invention]
However, in the above-mentioned conventional LED element, since the LED chip itself emits light at a relatively wide angle, the light is already radiated to a wide range at the time of emission from the transparent epoxy resin case to the outside. For example, when adopted as a bar code reading light source, the contrast is likely to decrease, and when further miniaturizing the bar code, reading accuracy becomes insufficient or reading becomes impossible. This was causing problems. In addition, even when employed as an encoder for position control, the light receiving element installed adjacent to the same light source on the same plane causes light leakage, which lowers the S / N ratio and lowers the measurement accuracy. There are also problems such as doing so.
[0005]
[Means for Solving the Problems]
The present invention includes a lower silicon case, an upper silicon case, and an LED chip as specific means for solving the conventional problem described above, and the LED chip is provided in at least one of the lower silicon case and the upper silicon case. The lower silicon case is provided with a concave terminal, and a base terminal is laid on the lower silicon case from a lower mounting portion on which the LED chip is mounted to a joint surface with the upper silicon case, and a lower mounting portion of the lower silicon case is provided. A light extraction hole is provided at a position corresponding to the upper mounting portion and a light emitting surface of the LED chip, and a lead wiring hole provided at a position corresponding to a lead terminal provided on the light emitting surface side of the LED chip. An upper shell provided with a base wiring hole corresponding to a position extended from the joint surface of the base terminal. A case is attached and joined by anodic bonding, the light extraction hole is sealed with a lens or a transparent member, and a conductive material is injected into the lead wiring hole and the base wiring hole to be sealed and electrically connected. The problem is solved by providing an LED element for a minimal light source and a method for manufacturing the same, characterized in that the method described above is performed.
[0006]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, the present invention will be described in detail based on an embodiment shown in the drawings. 1 and 2 is an LED element for a minimum light source according to the present invention. The LED element 1 for a minimum light source includes a lower silicon case 2, an upper silicon case 3, a bottom surface and an upper surface. And an LED chip 4 having electrodes. In the LED chip 4, the setting of the emission color and the like can be freely set.
[0007]
In forming the lower silicon case 2 and the upper silicon case 3, the same fine processing technology as that used when forming transistors, ICs, and the like on a silicon substrate, such as a photolithography method, is employed. In forming the silicon case 2, the formation of the resist film on the silicon substrate and the etching with hydrofluoric acid or the like are performed to form the lower recess 2a as shown in FIG. The lower recess 2a serves as a lower mounting portion on which the LED chip 4 is mounted.
[0008]
After the lower concave portion 2a is formed, an aluminum electrode 2b is provided from the bottom surface of the lower concave portion 2a to the upper surface of the lower silicon case 2, and a portion where the aluminum electrode 2b makes electrical contact is formed. Except for this, an insulating film 2c made of silicon oxide (SiO 2 ) or the like is provided to a thickness of 2000 to 3000 ° by a CVD method or the like, for example, to prevent electric leakage at the time of joining with an upper silicon case 3 described later. It is preventing.
[0009]
The LED chip 4 is die-bonded with a silver paste or the like on the aluminum electrode 2b laid on the bottom surface of the lower recess 2a. At this time, bumps 4a are formed on the electrodes on the upper surface side of the LED chip 4 by soldering or the like, and are provided for mounting the upper silicon case 3 described later.
[0010]
The upper silicon case 3 is formed of a silicon substrate as in the case of the lower silicon case 2, and the method of forming the upper silicon case 3 is the same as that of the lower silicon case 2 when forming a semiconductor such as a photolithography method. Micro-fabrication technology similar to that described above is adopted.
[0011]
The upper silicon case 3 is provided with an upper concave portion 3a at a position corresponding to the lower concave portion 2a of the lower silicon case 2, and the upper concave portion 3a is also formed by a photolithography method, an etching method or the like similarly to the lower concave portion 2a. In addition, the upper silicon case 3 is provided with a light extraction hole 3b, an LED lower electrode connection hole 3c, and an LED upper electrode connection hole 3d. The upper concave portion 3a is an upper mounting portion provided at a position opposite to a lower mounting portion on which the LED chip 4 is mounted.
[0012]
The light extraction hole 3b, the LED lower electrode connection hole 3c, and the LED upper electrode connection hole 3d are also formed by the same fine processing technology as the lower concave portion 2a and the upper concave portion 3a, as shown in FIG. In addition, the light extraction hole 3b is provided at a position corresponding to a light-emitting portion of the LED chip 4 die-mounted in the lower concave portion 2a.
[0013]
The LED lower electrode connection hole 3c is provided corresponding to a portion of the aluminum electrode 2b laid on the upper surface of the lower silicon case 2 where the insulating film 2c is not provided, and the LED upper electrode connection hole 3d is provided. Are provided corresponding to the positions of the bumps 4a of the LED chip 4.
[0014]
In this way, the upper silicon case 3 whose parts have been processed is overlapped with the lower silicon case 2 as a predetermined position (see FIG. 3), and heated to, for example, 300 to 500 ° C., and 1 kV is applied to both silicon cases 2 and 3. Bonding is performed by anodic bonding in which the surfaces are bonded by electrostatic attraction when a voltage of the order of magnitude is applied. Thereafter, a lens 5 is attached to the light extraction hole by an appropriate means such as sticking, and the light from the LED chip 4 is extracted to the outside as, for example, parallel light.
[0015]
The LED lower electrode connection hole 3c and the LED upper electrode connection hole 3d are filled with, for example, a silver paste 6, and a lead wire 7 is buried in the silver paste 6, so that the lower silicon case 2 The LED chip 4 sealed with the upper silicon case 3 can be supplied with power from the outside.
[0016]
FIG. 4 shows an example of a process when the upper silicon case 3 is formed from the silicon substrate 10. First, as described above, the upper concave portion 3a is formed on the silicon substrate by photolithography, dry etching, or the like. A plurality is formed on the substrate 10 as a matrix arrangement or the like.
[0017]
Thereafter, the light extraction hole 3b, the LED lower electrode connection hole 3c, and the LED upper electrode connection hole 3d are formed at appropriate positions with respect to the upper concave portion 3a by a photolithography method, a dry etching method, or the like as described above. After that, if it is cut by a dicing machine or the like and separated individually, an upper silicon case 3 having a desired configuration can be obtained.
[0018]
Next, the operation and effect of the LED element 1 for a minimal light source of the present invention having the above-described configuration will be described. By forming the case accommodating the LED chip 4 according to the present invention by the fine processing technique for the silicon substrate 10 like the lower silicon case 2 and the upper silicon case 3, it is possible to form a case having a size very close to the size of the LED chip 4. Further, it is possible to realize a highly accurate and small diameter light extraction hole 3b.
[0019]
Therefore, the size of the entire LED element can be reduced, and the light beam obtained through the light extraction hole 3b and the lens 5 can have a small beam diameter. For example, a bar code can be read or a document can be read. Even in applications such as scanning, higher precision can be obtained.
[0020]
In the above embodiment, the lower silicon case 2 and the upper silicon case 3 are both provided with recesses for accommodating the LED chips 4, but the present invention is not limited to this, and any one of them may be used. It is also possible to provide a recess only in the case and make the other case a flat plate. In this case, the flat position facing the concave portion is a mounting portion, and the lower silicon case 2 or the upper silicon case 3 corresponding to the mounting portion is provided with the lower concave portion of the embodiment described above. Aluminum electrode 2b provided in 2a, light extraction hole 3b provided in upper concave portion 3a, LED lower electrode connection hole 3c, and the like are formed to have the same configuration.
[0021]
【The invention's effect】
As described above, according to the present invention, a lower silicon case, an upper silicon case, and an LED chip are provided, and at least one of the lower silicon case and the upper silicon case is provided with a recess for accommodating the LED chip. In the lower silicon case, base terminals are laid from a lower mounting portion on which the LED chip is mounted to a joint surface with the upper silicon case, and an upper mounting portion is provided at a position corresponding to the lower mounting portion of the lower silicon case. A light extraction hole at a position corresponding to a light emitting surface of the LED chip, and a bonding between the base terminal and a lead wiring hole provided at a position corresponding to a lead terminal corresponding to a lead terminal provided on the light emitting surface of the LED chip; The upper silicon cable provided with a base wiring hole corresponding to the position extended on the surface The light extraction hole is sealed with a lens or a transparent member, and a conductive member is injected into the lead wiring hole and the base wiring hole, and sealing and electrical bonding are performed. Since the LED element for an extremely small light source is performed, the overall size of the LED element can be reduced, and the obtained light beam can be a fine and sharp light source without light leakage in the lateral direction. An extremely excellent effect of remarkably improving the reading accuracy as a code reader or an encoder is obtained. Furthermore, since the structure can be completely sealed, the resistance to the external environment such as humidity and harmful gas is improved, and the reliability can be secured.
[Brief description of the drawings]
FIG. 1 is an explanatory view showing a manufacturing process for attaching a case for an LED element for a minimal light source according to the present invention.
FIG. 2 is a plan view showing an LED element for a minimum light source according to the present invention.
FIG. 3 is a sectional view taken along line AA of FIG. 2;
FIG. 4 is an explanatory view showing a manufacturing process of the upper silicon case.
[Explanation of symbols]
1 ... LED element for minimal light source 2 ... Lower silicon case 2a ... Lower concave part (lower mounting part)
2b ... aluminum electrode 2c ... insulating film 3 ... upper silicon case 3a ... upper concave part (upper mounting part)
3b ... light extraction hole 3c ... LED lower electrode connection hole 3d ... LED upper electrode connection hole 4 ... LED chip 4a ... bump 5 ... lens 6 ... silver paste 7 ... lead wire 10 ... silicon substrate

Claims (3)

下部シリコンケースと上部シリコンケースとＬＥＤチップとから成り、前記下部シリコンケースまたは上部シリコンケースの少なくとも一方には前記ＬＥＤチップを収納する凹部を設けると共に、前記下部シリコンケースには前記ＬＥＤチップがマウントされる下側搭載部から前記上部シリコンケースとの接合面にかけてベース端子を敷設し、前記上部シリコンケースには前記下部シリコンケースの下側搭載部に相対する位置に上側搭載部を設け、前記上側搭載部には前記ＬＥＤチップの発光面に対応する位置に光取出し穴を設けると共に、前記ＬＥＤチップの前記発光面側に設けられるリード端子に対応する位置にリード配線穴を設け、前記上部ケースには前記ベース端子の前記接合面に延設された位置に対応する位置にベース配線穴を設けて、この上部シリコンケースを前記下部シリコンケースに被着し陽極接合し、前記光取出し穴をレンズ若しくは透明部材で封止し、前記リード配線穴と前記ベース配線穴とには導電性部材が注入されて封止と電気的接続が行われる工程としたことを特徴とする極小光源用ＬＥＤ素子の製造方法。A lower silicon case, an upper silicon case, and an LED chip, and at least one of the lower silicon case and the upper silicon case is provided with a recess for accommodating the LED chip, and the LED chip is mounted on the lower silicon case. Base terminals are laid from the lower mounting portion to the joint surface with the upper silicon case, and the upper silicon case is provided with an upper mounting portion at a position corresponding to the lower mounting portion of the lower silicon case. In the portion, a light extraction hole is provided at a position corresponding to the light emitting surface of the LED chip, and a lead wiring hole is provided at a position corresponding to a lead terminal provided on the light emitting surface side of the LED chip. A base wiring hole is provided at a position corresponding to the position of the base terminal extending to the joint surface. Then, the upper silicon case is attached to the lower silicon case and anodically bonded, the light extraction hole is sealed with a lens or a transparent member, and a conductive member is injected into the lead wiring hole and the base wiring hole. A method for manufacturing an LED element for an extremely small light source, wherein the sealing and electrical connection are performed. 下部シリコンケースと上部シリコンケースとＬＥＤチップとから成り、前記下部シリコンケースまたは上部シリコンケースの少なくとも一方には前記ＬＥＤチップを収納する凹部が設けられると共に、前記下部シリコンケースには前記ＬＥＤチップがマウントされる下側搭載部から前記上部シリコンケースとの接合面にかけてベース端子を敷設し、前記下部シリコンケースの下側搭載部に相対する位置には上側搭載部と前記ＬＥＤチップの発光面に対応する位置に光取出し穴と前記ＬＥＤチップの前記発光面側に設けられるリード端子に対応する位置に設けられるリード配線穴と前記ベース端子の前記接合面に延設された位置に対応するベース配線穴とが設けられた上部シリコンケースが被着され陽極接合で接合され前記光取出し穴はレンズ若しくは透明部材で封止され、前記リード配線穴と前記ベース配線穴とには導電性部材が注入されて封止と電気的接続が行われていることを特徴とする極小光源用ＬＥＤ素子。A lower silicon case, an upper silicon case, and an LED chip, at least one of the lower silicon case and the upper silicon case is provided with a recess for accommodating the LED chip, and the LED chip is mounted on the lower silicon case. A base terminal is laid from the lower mounting portion to the joint surface with the upper silicon case, and a position corresponding to the lower mounting portion of the lower silicon case corresponds to the upper mounting portion and the light emitting surface of the LED chip. A light extraction hole at a position, a lead wiring hole provided at a position corresponding to a lead terminal provided at the light emitting surface side of the LED chip, and a base wiring hole corresponding to a position extended at the bonding surface of the base terminal. The upper silicon case provided with is attached and joined by anodic bonding, and the light extraction hole is a lens. Properly it is sealed by a transparent member, the lead wire hole and the base wiring hole and the injected conductive member is in sealing an LED element for minimum light source, wherein the electrical connection is made. 前記下部シリコンケースには前記ＬＥＤチップ用の集積回路が形成されており、該集積回路に対する配線穴も前記リード配線穴、ベース配線穴と同様な手段で形成されていることを特徴とする請求項１に記載の極小光源用ＬＥＤ素子。The integrated circuit for the LED chip is formed in the lower silicon case, and a wiring hole for the integrated circuit is formed by the same means as the lead wiring hole and the base wiring hole. 2. The LED element for a minimal light source according to 1.
JP2003061364A 2003-03-07 2003-03-07 Led element for minimum optical source, and its manufacturing method Pending JP2004273690A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1786043A1 (en) * 2005-11-14 2007-05-16 Shinko Electric Industries Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
DE102006005299A1 (en) * 2006-02-06 2007-08-09 Osram Opto Semiconductors Gmbh Housing for a light-emitting diode component and light-emitting diode component
KR100765469B1 (en) * 2006-07-28 2007-10-09 한국광기술원 Led package for optical efficiency
JP2008034748A (en) * 2006-07-31 2008-02-14 Matsushita Electric Works Ltd Light-emitting apparatus
JP2008130934A (en) * 2006-11-22 2008-06-05 Shinko Electric Ind Co Ltd Electronic component, and manufacturing method thereof
KR20200075201A (en) * 2018-12-17 2020-06-26 삼성전자주식회사 Light source package

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1786043A1 (en) * 2005-11-14 2007-05-16 Shinko Electric Industries Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US7750358B2 (en) 2005-11-14 2010-07-06 Shinko Electric Industries Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
DE102006005299A1 (en) * 2006-02-06 2007-08-09 Osram Opto Semiconductors Gmbh Housing for a light-emitting diode component and light-emitting diode component
KR100765469B1 (en) * 2006-07-28 2007-10-09 한국광기술원 Led package for optical efficiency
JP2008034748A (en) * 2006-07-31 2008-02-14 Matsushita Electric Works Ltd Light-emitting apparatus
JP2008130934A (en) * 2006-11-22 2008-06-05 Shinko Electric Ind Co Ltd Electronic component, and manufacturing method thereof
KR20200075201A (en) * 2018-12-17 2020-06-26 삼성전자주식회사 Light source package
KR102614775B1 (en) * 2018-12-17 2023-12-19 삼성전자주식회사 Light source package

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