JP2004056980A - Voltage detecting circuit of semiconductor switching element - Google Patents
Voltage detecting circuit of semiconductor switching element Download PDFInfo
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Abstract
Description
【０００１】
【発明の属する技術分野】
この発明は、半導体電力変換回路を構成する半導体スイッチング素子の電圧検出回路に関する。
【０００２】
【従来の技術】
図３は、この種の半導体スイッチング素子の電圧検出回路の従来例を示す回路構成図であり、Ｑ１は半導体スイッチング素子としてのＩＧＢＴ、Ｄ１はＩＧＢＴＱ１と逆並列に接続されるダイオード、ＧＤＵ１ａはＩＧＢＴＱ１をオン・オフさせるゲート駆動回路、Ｒ１ ，Ｒ２ は分圧抵抗、ＣＦ はフィルタコンデンサを示し、この構成ではＲ１ とＲ２ とＣＦ とで電圧検出回路を形成している。
【０００３】
図３において、ＩＧＢＴＱ１の主端子（コレクタ端子，エミッタ端子）間に印加される電圧をＥｉｎ、前記電圧検出回路の検出電圧をＥｏｕｔとし、後述のフィルタコンデンサＣＦ を影響を無視すると、下記数１式に示す関係がある。
【０００４】
【数１】
Ｅｏｕｔ＝｛Ｒ２／（Ｒ１＋Ｒ２）｝Ｅｉｎ
上記数１式において、例えば、Ｒ１ ：Ｒ２ ＝９９：１に選定することにより、ＩＧＢＴＱ１の主端子間に印加される電圧すなわちＥｉｎの［１／１００］倍の電圧がＥｏｕｔに現れ、このＥｏｕｔはゲート駆動回路ＧＤＵ１ａの端子Ｖ−端子Ｅ間に入力される。
【０００５】
このゲート駆動回路ＧＤＵ１ａでは前記Ｅｏｕｔの値を監視し、この監視した値が予め定めた値を越えたときには、ＩＧＢＴＱ１に過電圧が印加されたと判定し、この過電圧印加によるＩＧＢＴＱ１の破損を防止するために、このＩＧＢＴＱ１に対して、例えば、ゲート駆動回路ＧＤＵ１ａにより活性領域で再オンさせる動作を行い、該ＩＧＢＴに過電圧が印加されるのを阻止するようにしている。
【０００６】
また、フィルタコンデンサＣＦ は、ＩＧＢＴＱ１のスイッチング動作に伴う前記電圧検出回路の配線インダクタンスや分圧抵抗Ｒ１ ，Ｒ２ 内部のインダクタンス成分，コンデンサ成分などによる寄生振動を抑制し、該電圧検出回路が誤検出するのを防止するために設けられている。
【０００７】
【発明が解決しようとする課題】
図３に示した半導体スイッチング素子の従来の電圧検出回路によると、上述の寄生振動抑制用のフィルタコンデンサＣＦ により、前記Ｅｉｎの電圧変化に対して、前記Ｅｏｕｔの電圧変化の追従に遅れが生ずるという問題があった。
【０００８】
この発明の目的は、上記問題点を解決する半導体スイッチング素子の電圧検出回路を提供することにある。
【０００９】
【課題を解決するための手段】
この第１の発明は、半導体電力変換回路を構成する半導体スイッチング素子の主端子間に抵抗とコンデンサの並列回路を複数組直列接続してなる両端を接続すると共に、それぞれの前記並列回路の時定数をほぼ等しく設定し、前記半導体スイッチング素子のいずれか一方の主端子と前記それぞれの直列接続点のいずれか１点との間、又は前記それぞれの直列接続点のいずれか２点の間の電圧に基づく値を前記半導体スイッチング素子に印加される電圧として検出することを特徴とした半導体スイッチング素子の電圧検出回路にする。
【００１０】
また第２の発明は前記第１の発明の半導体スイッチング素子の電圧検出回路において、前記電圧検出回路が、前記半導体スイッチング素子のターンオフスナバとしての機能を兼ね備えることを特徴とする。
【００１１】
さらに第３の発明は前記第２の発明の半導体スイッチング素子の電圧検出回路において、前記電圧検出回路を形成するそれぞれのコンデンサの合計容量値を、スナバコンデンサのみで形成される前記ターンオフスナバにおける前記スナバコンデンサの容量値にほぼ等しく設定したことを特徴とする。
【００１２】
この発明によれば、半導体スイッチング素子の主端子間に抵抗とコンデンサの並列回路を複数組直列接続してなる両端を接続すると共に、それぞれの前記並列回路の時定数をほぼ等しく設定することにより、先述の寄生振動を抑制しつつ、検出遅れを解消することができる。
【００１３】
【発明の実施の形態】
図１は、この発明の半導体スイッチング素子の電圧検出回路の第１の実施例を示す回路構成図であり、図３に示し従来例回路と同様に、Ｑ１は半導体スイッチング素子としてのＩＧＢＴ、Ｄ１はＩＧＢＴＱ１と逆並列に接続されるダイオード、ＧＤＵ１ａはＩＧＢＴＱ１をオン・オフさせるゲート駆動回路であり、また、Ｒ１１，Ｒ１２は分圧抵抗、Ｃ１１，Ｃ１２はコンデンサを示し、この構成ではＲ１１，Ｒ１２とＣ１１，Ｃ１２とで電圧検出回路を形成している。
【００１４】
図１において、ＩＧＢＴＱ１の主端子（コレクタ端子，エミッタ端子）間に印加される電圧をＥｉｎ、前記電圧検出回路の検出電圧をＥｏｕｔとすると、下記数２式に示す関係がある。
【００１５】
【数２】
Ｅｏｕｔ＝｛Ｒ１２／（１＋ｊωＲ１２・Ｃ１２）｝÷｛Ｒ１１／（１＋ｊωＲ１１・Ｃ１１）＋Ｒ１２／（１＋ｊωＲ１２・Ｃ１２）｝×Ｅｉｎ
ここで、Ｒ１１・Ｃ１１＝Ｒ１２・Ｃ１２となるように、Ｒ１１，Ｒ１２の抵抗値およびＣ１１，Ｃ１２の容量値を選定すると、上記数２式は下記数３式となり、この数３式から明らかなように、コンデンサＣ１１，Ｃ１２の容量値および印加周波数に関係なく一定の分圧比で電圧検出ができることを示している。
【００１６】
【数３】
Ｅｏｕｔ＝｛Ｒ１２／（Ｒ１１＋Ｒ１２）｝Ｅｉｎ
上記数３式において、例えば、Ｒ１１：Ｒ１２＝Ｃ１２：Ｃ１１＝９９：１に選定することにより、ＩＧＢＴＱ１の主端子間に印加される電圧すなわちＥｉｎの［１／１００］倍の電圧がＥｏｕｔに現れ、このＥｏｕｔはゲート駆動回路ＧＤＵ１ａの端子Ｖ−端子Ｅ間に入力され、このゲート駆動回路ＧＤＵ１ａでは前記Ｅｏｕｔの値が予め定めた値を越えたときには、ＩＧＢＴＱ１に過電圧が印加されたと判定し、この過電圧印加によるＩＧＢＴＱ１の破損を防止するために、このＩＧＢＴＱ１に対して、例えば、ゲート駆動回路ＧＤＵ１ａにより活性領域で再オンさせる動作を行い、該ＩＧＢＴに過電圧が印加されるのを阻止するようにしている。
【００１７】
また、図１に示した構成において、Ｒ１１・Ｃ１１およびＲ１２・Ｃ１２の時定数を図３の構成におけるＲ２ ・ＣＦ とからなる時定数とほぼ等しく設定すれば、ＩＧＢＴＱ１のスイッチング動作に伴う前記電圧検出回路の配線インダクタンスや分圧抵抗Ｒ１１，Ｒ１２内部のインダクタンス成分，コンデンサ成分などによる寄生振動を抑制でき、該電圧検出回路が誤検出するのを防止することができる。
【００１８】
なお、図１に示した電圧検出回路は抵抗とコンデンサの並列回路２組を直列接続した構成であるが、例えば、抵抗とコンデンサの並列回路４組を直列接続した構成にし、ＩＧＢＴＱ１のエミッタ端子またはコレクタ端子と前記直列接続点のいずれか１点との間、又は前記直列接続点のいずれか２点の間の電圧に基づく値をＩＧＢＴＱ１に印加される電圧として検出することもでき、このような構成にすることにより、前記ＥｉｎとＥｏｕｔとの分圧比を容易に所望の値に設定することが可能となる。
【００１９】
図２（ロ）は、この発明の半導体スイッチング素子の電圧検出回路の第２の実施例を示す回路構成図であり、図３に示し従来例回路と同様に、Ｑ１は半導体スイッチング素子としてのＩＧＢＴ、Ｄ１はＩＧＢＴＱ１と逆並列に接続されるダイオード、ＧＤＵ１ａはＩＧＢＴＱ１をオン・オフさせるゲート駆動回路であり、また、Ｒ２１，Ｒ２２は分圧抵抗、ＣＳ１，ＣＳ２はスナバコンデンサを示し、この構成ではＲ２１，Ｒ２２とＣＳ１，ＣＳ２とで電圧検出回路を形成している。さらに、図２（イ）におけるＧＤＵ１はＩＧＢＴＱ１をオン・オフさせるゲート駆動回路、ＣＳ はＩＧＢＴＱ１のターンオフ時のサージ電圧を抑制するためのターンオフスナバを形成するスナバコンデンサであり、このスナバコンデンサＣＳ の容量は主として、ＩＧＢＴＱ１のターンオフ時のスイッチング動作軌跡が安全動作領域（ＲＢＳＯＡ）内に位置する値に基づいて設定される。
【００２０】
すなわち図２（ロ）の構成において、Ｒ２１・ＣＳ１＝Ｒ２２・ＣＳ２となるように、Ｒ２１，Ｒ２２の抵抗値およびＣＳ１，ＣＳ２の容量値を選定すると、前記ＥｉｎとＥｏｕｔの関係は上記数３式と同形となり、さらに、スナバコンデンサＣＳ１およびＣＳ２の合成容量値を、図２（イ）に示したスナバコンデンサＣＳ の容量値にほぼ等しく設定すれば、この電圧検出回路は前記ターンオフスナバとしての機能を兼ね備えることができる。
【００２１】
【発明の効果】
この発明の半導体スイッチング素子の電圧検出回路によれば、該半導体スイッチング素子の印加される電圧を遅滞なく検出することが可能となる。また、この電圧検出回路は前記半導体スイッチング素子のターンオフスナバの機能を兼ねることができ、該半導体スイッチング素子の過電圧印加およびそれに基づく素子破壊を防止することができる。
【図面の簡単な説明】
【図１】
この発明の第１の実施例を示す回路構成図
【図２】
この発明の第２の実施例を説明する回路構成図
【図３】
従来例を示す回路構成図
【符号の説明】
Ｑ１…ＩＧＢＴ、Ｄ１…ダイオード、ＧＤＵ１…ゲート駆動回路、ＧＤＵ１ａ…ゲート駆動回路、Ｒ１ ，Ｒ２ ，Ｒ１１，Ｒ１２，Ｒ２１，Ｒ２２…分圧抵抗、ＣＦ …フィルタコンデンサ、Ｃ１１，Ｃ１２…コンデンサ、ＣＳ ，ＣＳ１，ＣＳ２…スナバコンデンサ。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a voltage detection circuit for a semiconductor switching element included in a semiconductor power conversion circuit.
[0002]
[Prior art]
FIG. 3 is a circuit configuration diagram showing a conventional example of a voltage detection circuit of a semiconductor switching element of this type, wherein Q1 is an IGBT as a semiconductor switching element, D1 is a diode connected in antiparallel to the IGBT Q1, and GDU1a is an IGBT Q1. gate drive circuit that turns on and off, R 1, R 2 are voltage dividing resistors, C F denotes a filter capacitor, in this configuration form a voltage detecting circuit in R 1 and R 2 and C F.
[0003]
3, the main terminal (collector terminal, an emitter terminal) of IGBTQ1 When a voltage applied between Ein, the detection voltage of the voltage detection circuit and Eout, ignoring the effects of the filter capacitor C F will be described later, the number below 1 There is a relationship shown in the equation.
[0004]
(Equation 1)
Eout = {R 2 / (R 1 + R 2)} Ein
In the above equation (1), for example, by selecting R 1 : R 2 = 99: 1, a voltage applied between the main terminals of the
[0005]
The gate drive circuit GDU1a monitors the value of Eout. If the monitored value exceeds a predetermined value, it is determined that an overvoltage has been applied to the IGBT Q1, and in order to prevent the IGBT Q1 from being damaged due to the overvoltage application. The IGBT Q1 is turned on again in the active region by, for example, the gate drive circuit GDU1a to prevent application of an overvoltage to the IGBT.
[0006]
Also, filter capacitor C F is the wiring inductance and the voltage dividing resistors R 1, R 2 internal inductance component of the voltage detection circuit due to the switching operation of the IGBT Q1, to suppress parasitic oscillations due capacitor component, the voltage detection circuit It is provided to prevent erroneous detection.
[0007]
[Problems to be solved by the invention]
According to the conventional voltage detection circuit of the semiconductor switching element shown in FIG. 3, the filter capacitor C F for parasitic oscillation suppression described above, the voltage change of the Ein, delay occurs in tracking of the voltage change of the Eout There was a problem.
[0008]
An object of the present invention is to provide a voltage detection circuit for a semiconductor switching element that solves the above-mentioned problems.
[0009]
[Means for Solving the Problems]
According to the first invention, both ends of a plurality of series-connected parallel circuits of resistors and capacitors are connected between main terminals of a semiconductor switching element constituting a semiconductor power conversion circuit, and a time constant of each of the parallel circuits is connected. Are set substantially equal to each other, and the voltage between any one of the main terminals of the semiconductor switching element and any one of the series connection points or the voltage between any two of the series connection points is set to A voltage detection circuit for a semiconductor switching element is characterized in that a value based on the voltage is detected as a voltage applied to the semiconductor switching element.
[0010]
According to a second invention, in the voltage detection circuit for a semiconductor switching element according to the first invention, the voltage detection circuit also has a function as a turn-off snubber of the semiconductor switching element.
[0011]
In a third aspect of the present invention, in the voltage detection circuit for a semiconductor switching element according to the second aspect of the present invention, the total capacitance value of each capacitor forming the voltage detection circuit is changed by the snubber in the turn-off snubber formed only by a snubber capacitor. It is characterized in that the capacitance value is set substantially equal to the capacitance value of the capacitor.
[0012]
According to the present invention, by connecting both ends of a plurality of series-connected parallel circuits of resistors and capacitors between the main terminals of the semiconductor switching element, and by setting the time constants of the respective parallel circuits to be substantially equal, The detection delay can be eliminated while suppressing the above-described parasitic vibration.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a circuit diagram showing a first embodiment of a voltage detection circuit of a semiconductor switching element according to the present invention. As in the conventional circuit shown in FIG. 3, Q1 is an IGBT as a semiconductor switching element, and D1 is A diode connected in anti-parallel to the IGBT Q1, a GDU1a is a gate drive circuit for turning on / off the IGBT Q1, R 11 and R 12 are voltage dividing resistors, C 11 and C 12 are capacitors, and in this configuration, R 11 and C 12 are capacitors. forming a voltage detection circuit with a 11, R 12 and C 11, C 12.
[0014]
In FIG. 1, when a voltage applied between the main terminals (collector terminal and emitter terminal) of the IGBT Q1 is Ein, and a detection voltage of the voltage detection circuit is Eout, the following equation is established.
[0015]
(Equation 2)
Eout = {R 12 / (1 + jωR 12 · C 12)} ÷ {R 11 / (1 + jωR 11 · C 11) + R 12 / (1 + jωR 12 · C 12)} × Ein
Here, when the resistance values of R 11 and R 12 and the capacitance values of C 11 and C 12 are selected such that R 11 · C 11 = R 12 · C 12 , the above equation 2 becomes the following equation 3. As is apparent from the equation (3), it is shown that the voltage can be detected at a constant voltage dividing ratio regardless of the capacitance values of the capacitors C 11 and C 12 and the applied frequency.
[0016]
[Equation 3]
Eout = {R 12 / (R 11 + R 12)} Ein
In the above equation (3), for example, by selecting R 11 : R 12 = C 12 : C 11 = 99: 1, the voltage applied between the main terminals of the IGBT Q1, that is, the voltage [1/100] times Ein Appears in Eout, and this Eout is input between the terminal V and the terminal E of the gate drive circuit GDU1a. In the gate drive circuit GDU1a, when the value of the Eout exceeds a predetermined value, it is determined that an overvoltage is applied to the IGBT Q1. In order to prevent the damage of the IGBT Q1 due to the application of the overvoltage, the IGBT Q1 is turned on again in the active region by, for example, the gate drive circuit GDU1a to prevent the overvoltage from being applied to the IGBT Q1. I am trying to do it.
[0017]
Also, in the configuration shown in FIG. 1, if the time constants of R 11 · C 11 and R 12 · C 12 are set to be substantially equal to the time constant consisting of R 2 · C F in the configuration of FIG. 3, the switching of IGBT Q1 can be performed. It is possible to suppress the parasitic oscillation due to the wiring inductance of the voltage detection circuit, the inductance components inside the voltage dividing resistors R 11 and R 12 , the capacitor component, and the like accompanying the operation, and prevent the voltage detection circuit from erroneously detecting.
[0018]
The voltage detection circuit shown in FIG. 1 has a configuration in which two sets of parallel circuits of resistors and capacitors are connected in series. For example, a configuration in which four sets of parallel circuits of resistors and capacitors are connected in series, and the emitter terminal of the IGBT Q1 or A value based on a voltage between a collector terminal and any one of the series connection points or a voltage between any two points of the series connection point can be detected as a voltage applied to the IGBT Q1. With this configuration, the partial pressure ratio between Ein and Eout can be easily set to a desired value.
[0019]
FIG. 2B is a circuit diagram showing a second embodiment of the voltage detection circuit of the semiconductor switching element according to the present invention. As in the conventional circuit shown in FIG. 3, Q1 is an IGBT as a semiconductor switching element. , D1 denotes a diode connected in antiparallel with the IGBT Q1, GDU1a denotes a gate drive circuit to turn on and off the IGBT Q1, also, R 21, R 22 are voltage dividing resistors, C S1, C S2 denotes a snubber capacitor, In this configuration, a voltage detection circuit is formed by R 21 and R 22 and C S1 and C S2 . Further, the gate drive circuit GDU1 is to turn on and off the IGBT Q1 in FIG. 2 (b), C S is the snubber capacitor to form a turn-off snubber for suppressing a surge voltage at the turn-off time of IGBT Q1, the snubber capacitor C S Is mainly set based on a value in which the switching operation trajectory at the time of turning off the IGBT Q1 is located within the safe operation area (RBSOA).
[0020]
That is, in the configuration of FIG. 2B, when the resistance values of R 21 and R 22 and the capacitance values of C S1 and C S2 are selected so that R 21 · C S1 = R 22 · C S2 , the above-mentioned Ein and relationship Eout becomes the equation (3) the same shape, further, the combined capacitance value of the snubber capacitor C S1 and C S2, if substantially equal to the capacitance of the snubber capacitor C S shown in FIG. 2 (b), the The voltage detection circuit can also have a function as the turn-off snubber.
[0021]
【The invention's effect】
According to the semiconductor switching element voltage detection circuit of the present invention, it is possible to detect the voltage applied to the semiconductor switching element without delay. Further, this voltage detection circuit can also function as a turn-off snubber of the semiconductor switching element, and can prevent application of an overvoltage to the semiconductor switching element and element destruction based thereon.
[Brief description of the drawings]
FIG.
FIG. 2 is a circuit diagram showing a first embodiment of the present invention.
FIG. 3 is a circuit diagram illustrating a second embodiment of the present invention.
Circuit configuration diagram showing a conventional example [Description of symbols]
Q1 IGBT, D1 diode, GDU1 gate drive circuit, GDU1a gate drive circuit, R 1 , R 2 , R 11 , R 12 , R 21 , R 22 , voltage dividing resistor, C F, filter capacitor, C 11, C12 ... capacitor, C S, C S1, C S2 ... snubber capacitor.
Claims (3)
前記半導体スイッチング素子のいずれか一方の主端子と前記それぞれの直列接続点のいずれか１点との間、又は前記それぞれの直列接続点のいずれか２点の間の電圧に基づく値を前記半導体スイッチング素子に印加される電圧として検出することを特徴とする半導体スイッチング素子の電圧検出回路。Connect both ends of a series connection of a plurality of parallel circuits of resistors and capacitors between the main terminals of the semiconductor switching elements constituting the semiconductor power conversion circuit, and set the time constants of the respective parallel circuits to be substantially equal,
A value based on a voltage between any one main terminal of the semiconductor switching element and any one of the respective series connection points, or a voltage between any two of the respective series connection points, is used as the semiconductor switching element. A voltage detecting circuit for a semiconductor switching element, wherein the voltage is detected as a voltage applied to the element.
前記電圧検出回路が、前記半導体スイッチング素子のターンオフスナバとしての機能を兼ね備えることを特徴とする半導体スイッチング素子の電圧検出回路。The voltage detection circuit of a semiconductor switching element according to claim 1,
The voltage detection circuit for a semiconductor switching element, wherein the voltage detection circuit also has a function as a turn-off snubber of the semiconductor switching element.
前記電圧検出回路を形成するそれぞれのコンデンサの合成容量値を、スナバコンデンサのみで形成される前記ターンオフスナバにおける前記スナバコンデンサの容量値にほぼ等しく設定したことを特徴とする半導体スイッチング素子の電圧検出回路。The voltage detection circuit for a semiconductor switching element according to claim 2,
A voltage detection circuit for a semiconductor switching element, wherein a combined capacitance value of each capacitor forming the voltage detection circuit is set substantially equal to a capacitance value of the snubber capacitor in the turn-off snubber formed only by a snubber capacitor. .
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| JP2002215078A JP2004056980A (en) | 2002-07-24 | 2002-07-24 | Voltage detecting circuit of semiconductor switching element |
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| EP1615341A2 (en) | 2004-07-09 | 2006-01-11 | Alstom | Drive circuit for a power switching semiconductor and method of driving the same |
| JP2007089335A (en) * | 2005-09-22 | 2007-04-05 | Toshiba Mitsubishi-Electric Industrial System Corp | Voltage detection method of power switching element and power conversion device using this |
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| WO2011086685A1 (en) * | 2010-01-15 | 2011-07-21 | トヨタ自動車株式会社 | Voltage detection apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1615341A3 (en) * | 2004-07-09 | 2006-11-08 | Alstom | Drive circuit for a power switching semiconductor and method of driving the same |
| EP1615341A2 (en) | 2004-07-09 | 2006-01-11 | Alstom | Drive circuit for a power switching semiconductor and method of driving the same |
| JP2007089335A (en) * | 2005-09-22 | 2007-04-05 | Toshiba Mitsubishi-Electric Industrial System Corp | Voltage detection method of power switching element and power conversion device using this |
| JP2009153257A (en) * | 2007-12-19 | 2009-07-09 | Fuji Electric Systems Co Ltd | Short circuit protection circuit of power converter |
| JPWO2011086685A1 (en) * | 2010-01-15 | 2013-05-16 | トヨタ自動車株式会社 | Voltage detector |
| WO2011086685A1 (en) * | 2010-01-15 | 2011-07-21 | トヨタ自動車株式会社 | Voltage detection apparatus |
| CN102725643A (en) * | 2010-01-15 | 2012-10-10 | 丰田自动车株式会社 | Voltage detection apparatus |
| JP2013207552A (en) * | 2012-03-28 | 2013-10-07 | Denso Corp | Semiconductor device |
| JP2013207553A (en) * | 2012-03-28 | 2013-10-07 | Denso Corp | Semiconductor device |
| CN103018540A (en) * | 2012-11-20 | 2013-04-03 | 山西省电力公司阳泉供电公司 | Zero-sequence voltage detection device of 6-10 KV circuit |
| CN106569007A (en) * | 2016-11-11 | 2017-04-19 | 中国人民解放军海军工程大学 | IGBT turn-off voltage and on-voltage integrated measurement circuit |
| CN106569007B (en) * | 2016-11-11 | 2019-05-03 | 中国人民解放军海军工程大学 | The measuring circuit that IGBT turns off voltage and conducting voltage integrates |
| CN114417765A (en) * | 2022-01-18 | 2022-04-29 | 南昌航空大学 | Method and system for calculating RC buffer absorption circuit parameters |
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