JP2001148368A - High frequency applying electrode and plasma processing system - Google Patents
High frequency applying electrode and plasma processing systemInfo
- Publication number
- JP2001148368A JP2001148368A JP32889599A JP32889599A JP2001148368A JP 2001148368 A JP2001148368 A JP 2001148368A JP 32889599 A JP32889599 A JP 32889599A JP 32889599 A JP32889599 A JP 32889599A JP 2001148368 A JP2001148368 A JP 2001148368A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- frequency
- electrode body
- plasma
- auxiliary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高周波印加電極と
この電極を用いたプラズマプロセス装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency application electrode and a plasma processing apparatus using this electrode.
【０００２】[0002]
【従来の技術】従来より、半導体ウエハや液晶表示装置
用のガラス基板の加工処理には、ドライエッチング装置
やＣＶＤ装置等のプラズマプロセス装置が使用されてい
る。図２は、従来のプラズマプロセス装置を示す。真空
容器２の内部には、グランド端子７に接続された上部電
極８と、高周波電源６に接続された下部電極１とが対向
して配置されている。2. Description of the Related Art Conventionally, plasma processing apparatuses such as dry etching apparatuses and CVD apparatuses have been used for processing semiconductor wafers and glass substrates for liquid crystal display devices. FIG. 2 shows a conventional plasma processing apparatus. Inside the vacuum vessel 2, an upper electrode 8 connected to a ground terminal 7 and a lower electrode 1 connected to a high-frequency power supply 6 are arranged to face each other.
【０００３】下部電極１に半導体ウエハやガラス基板な
どの被処理物が載置されると、真空ポンプ５によって真
空容器２の内部が排気されて減圧され、プロセス処理に
必要な反応ガスがガス供給部４より供給されて、真空容
器３の内部が一定の圧力に保たれる。この状態で高周波
電源６により下部電極８に高周波電力が印加されると、
プラズマが発生して被処理物に加工処理が施される。When an object to be processed, such as a semiconductor wafer or a glass substrate, is placed on the lower electrode 1, the inside of the vacuum vessel 2 is evacuated and decompressed by a vacuum pump 5, and a reaction gas required for the process is supplied. Supplied from the section 4, the inside of the vacuum vessel 3 is maintained at a constant pressure. When high-frequency power is applied to the lower electrode 8 by the high-frequency power supply 6 in this state,
Plasma is generated and processing is performed on the object.
【０００４】上記のように構成されたプラズマプロセス
装置で加工処理される被処理物は、近年、その大型化が
急速に進んでおり、それに伴なって下部電極８の大型化
が要求されている。具体的には、半導体ウエハでは、そ
の径が２００ｍｍから３００ｍｍへと大型化しており、
ガラス基板では、液晶表示装置の大画面化に伴なって６
５０ｍｍ角から将来的には１０００ｍｍ角のものへと大
型化が進められている。The size of the object to be processed by the plasma processing apparatus configured as described above has been rapidly increasing in recent years, and accordingly, the size of the lower electrode 8 has been required to be increased. . Specifically, in semiconductor wafers, the diameter has increased from 200 mm to 300 mm,
For glass substrates, 6
Increasing the size from 50 mm square to 1000 mm square in the future is being promoted.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、被処理
物として例えば２００ｍｍ径の半導体ウエハを処理する
場合には、上記のプラズマプロセス装置でも、下部電極
８で発生するプラズマの密度にさほど大きなばらつきが
無いためほぼ均一なプラズマ処理が行えるが、半導体ウ
エハが３００ｍｍ径まで大きくなった場合には、下部電
極８で発生するプラズマは高周波電流の表皮効果によっ
てプラズマ密度の分布に大きなばらつきが生じ、均一な
加工処理が困難となる。However, when a semiconductor wafer having a diameter of, for example, 200 mm is processed as an object to be processed, even in the above-described plasma processing apparatus, the density of plasma generated at the lower electrode 8 does not vary much. Therefore, almost uniform plasma processing can be performed. However, when the semiconductor wafer is enlarged to a diameter of 300 mm, the plasma generated at the lower electrode 8 has a large variation in the distribution of the plasma density due to the skin effect of the high-frequency current, and the uniform processing is performed. Processing becomes difficult.
【０００６】表皮効果とは、高周波電流が導体を流れる
ときに導体の中心部よりも導体の表面側を流れるという
物理現象であり、下部電極８を一種の導体と考えると、
従来より使用されている小さい電極を使用する場合には
表皮効果による影響が小さくあまり考慮する必要はない
が、被処理物の大型化により下部電極８が大きくなった
場合には表皮効果の影響が大きくなる。The skin effect is a physical phenomenon in which a high-frequency current flows on the surface of the conductor rather than the center of the conductor when flowing through the conductor. When the lower electrode 8 is considered as a kind of conductor,
When using a conventionally used small electrode, the influence of the skin effect is small and need not be considered so much. However, when the lower electrode 8 becomes large due to the enlargement of the object to be processed, the influence of the skin effect is reduced. growing.
【０００７】すなわち、高周波電流が下部電極８の外周
部に集中して中央部に流れにくくなり、仮想線ａ２で示
すように、下部電極８の外周部でプラズマ密度が高くな
り、中央部とのプラズマ密度の差ｈ２が大きくなる。こ
のように表皮効果の影響が大きくなると、その影響が無
視できなくなり、被処理物に均一な加工処理を施すこと
が困難となり、製造工程の歩留まりが悪化する。That is, the high-frequency current is concentrated on the outer peripheral portion of the lower electrode 8 and hardly flows to the central portion. As shown by the imaginary line a2, the plasma density increases at the outer peripheral portion of the lower electrode 8, and the The difference h2 in the plasma density increases. When the influence of the skin effect becomes large in this way, the influence cannot be ignored, and it becomes difficult to perform uniform processing on the object to be processed, and the yield of the manufacturing process is deteriorated.
【０００８】本発明は前記問題点を解決し、電極周辺部
への高周波電流の集中を防ぎ、プラズマの均一性を高め
ることができる高周波印加電極とプラズマプロセス装置
を提供することを目的とする。It is an object of the present invention to provide a high-frequency applying electrode and a plasma processing apparatus which can solve the above-mentioned problems, prevent high-frequency current from concentrating around the electrode, and improve the uniformity of plasma.
【０００９】[0009]
【課題を解決するための手段】本発明の高周波印加電極
は、電極本体とこの電極本体よりも低い高周波抵抗の補
助電極とからなることを特徴とする。この本発明による
と、補助電極の大きさを変えることでプラズマ密度のピ
ーク位置を可変することができ、所望の位置のプラズマ
密度を制御でき、電極周辺部における高周波電流の集中
を防ぐことができる。According to the present invention, there is provided a high frequency applying electrode comprising an electrode body and an auxiliary electrode having a high frequency resistance lower than that of the electrode body. According to the present invention, the peak position of the plasma density can be varied by changing the size of the auxiliary electrode, the plasma density at a desired position can be controlled, and the concentration of high-frequency current in the peripheral portion of the electrode can be prevented. .
【００１０】本発明のプラズマプロセス装置は、電極本
体と補助電極とからなる高周波印加電極を用いることを
特徴とする。この本発明によると、被処理物に均一なプ
ラズマ処理を施すことができ、製造工程の歩留まりの向
上が図れる。[0010] The plasma processing apparatus according to the present invention is characterized in that a high-frequency applying electrode comprising an electrode body and an auxiliary electrode is used. According to the present invention, uniform plasma processing can be performed on an object to be processed, and the yield of the manufacturing process can be improved.
【００１１】[0011]
【発明の実施の形態】本発明の請求項１記載の高周波印
加電極は、外部より反応ガスが供給される真空容器内に
対向して配置され、高周波電圧が印加されて前記真空容
器内にプラズマを発生する高周波印加電極であって、少
なくとも一方の側の電極を、電極本体と、前記高周波電
圧が印加され前記電極本体によって表面が被覆されると
ともに前記電極本体よりも高周波抵抗の低い補助電極と
から構成したことを特徴とする。DESCRIPTION OF THE PREFERRED EMBODIMENTS The high-frequency applying electrode according to the first aspect of the present invention is disposed to face a vacuum vessel to which a reaction gas is supplied from the outside, and a high-frequency voltage is applied to generate a plasma in the vacuum vessel. A high-frequency application electrode generating at least one of the electrodes, an electrode body, and an auxiliary electrode having a high-frequency resistance lower than the electrode body, the surface of which is coated with the high-frequency voltage and the electrode body is applied. It is characterized by comprising.
【００１２】本発明の請求項２記載の高周波印加電極
は、請求項１において、電極本体と補助電極との間に前
記補助電極の高周波抵抗よりも低い高周波抵抗の電極を
介装したことを特徴とする。本発明の請求項３記載の高
周波印加電極は、請求項１において、電極本体がアルミ
ニウムであり、補助電極が銅であることを特徴とする。According to a second aspect of the present invention, in the high frequency applying electrode according to the first aspect, an electrode having a high frequency resistance lower than the high frequency resistance of the auxiliary electrode is interposed between the electrode body and the auxiliary electrode. And According to a third aspect of the present invention, in the high frequency applying electrode according to the first aspect, the electrode body is made of aluminum and the auxiliary electrode is made of copper.
【００１３】本発明の請求項４記載の高周波印加電極
は、請求項１〜請求項３のいずれかにおいて、電極本体
の上面の面積に対する補助電極の上面の面積が４０％〜
９５％の範囲であり、前記電極本体の厚みに対する補助
電極の厚みが１０％〜９０％の範囲であることを特徴と
する。本発明の請求項５記載のプラズマプロセス装置
は、外部より反応ガスが供給される真空容器内に対向し
て配置された電極に高周波電圧を印加して前記真空容器
内にプラズマを発生させるプラズマプロセス装置であっ
て、少なくとも一方の側の電極に、電極本体と、前記高
周波電圧が印加され前記電極本体によって表面が被覆さ
れるとともに前記電極本体よりも高周波抵抗の低い補助
電極とからなる高周波印加電極を用い、前記補助電極を
介して電極本体に電圧を印加し、前記補助電極の外周部
と電極本体との接合部に高周波電流が集中して流れるよ
うに構成したことを特徴とする。According to a fourth aspect of the present invention, in the high frequency applying electrode according to any one of the first to third aspects, the area of the upper surface of the auxiliary electrode with respect to the area of the upper surface of the electrode body is 40% to 40%.
The thickness of the auxiliary electrode is in the range of 10% to 90% with respect to the thickness of the electrode body. The plasma processing apparatus according to claim 5, wherein a high-frequency voltage is applied to an electrode disposed opposite to a vacuum vessel to which a reaction gas is supplied from the outside to generate plasma in the vacuum vessel. A high-frequency application electrode, comprising: an electrode body; and an auxiliary electrode having a high-frequency resistance lower than that of the electrode body, the surface of which is covered with the electrode body, wherein the high-frequency voltage is applied to at least one of the electrodes. And applying a voltage to the electrode body via the auxiliary electrode, so that a high-frequency current flows intensively at a junction between the outer peripheral portion of the auxiliary electrode and the electrode body.
【００１４】以下、本発明の具体的な実施の形態を、図
１を用いて説明する。なお、従来例を示す図２と同様の
作用をなすものについては、同一の符号をつけて説明す
る。 （実施の形態）図１に示すように、プラズマプロセス装
置は、外部に設けられたガス供給部４より反応ガスが供
給される真空容器３内に、従来と同様に、グランド端子
７に接続された上部電極２と高周波電源６に接続された
下部電極１とが対向して配置されている。Hereinafter, a specific embodiment of the present invention will be described with reference to FIG. The components having the same functions as those of the conventional example shown in FIG. 2 are described with the same reference numerals. (Embodiment) As shown in FIG. 1, a plasma processing apparatus is connected to a ground terminal 7 in a vacuum vessel 3 to which a reaction gas is supplied from a gas supply unit 4 provided outside, as in the prior art. The upper electrode 2 and the lower electrode 1 connected to the high-frequency power supply 6 are arranged to face each other.
【００１５】下部電極１は、アルミニウムからなる電極
本体１ａとこの電極本体１ａによって表面が被覆された
アルミニウムよりも高周波抵抗の低い銅からなる補助電
極１ｂとからなる高周波印加電極であり、補助電極１ｂ
を介して電極本体１ａに高周波電圧を印加し、補助電極
１ｂの外周部と電極本体１ａとの接合部に高周波電流が
集中して流れるように構成されている。The lower electrode 1 is a high-frequency application electrode composed of an electrode body 1a made of aluminum and an auxiliary electrode 1b made of copper whose surface is covered with the electrode body 1a and having a high-frequency resistance lower than that of aluminum.
A high-frequency voltage is applied to the electrode main body 1a through the electrode, and the high-frequency current flows intensively at the junction between the outer peripheral portion of the auxiliary electrode 1b and the electrode main body 1a.
【００１６】この高周波印加電極としての下部電極１
は、例えば、直径Ｒ１，厚みｔ１の円筒形状の電極本体
１ａの底部に凹部を穿設し、次いで、直径Ｒ２，厚みｔ
２の円筒形状の補助電極１ｂを作成して、前記凹部と前
記補助電極１ｂの表面に境面仕上げを施して、前記凹部
に補助電極１ｂをはめ込むことで形成される。このと
き、電極本体１ａの上面の面積に対する補助電極１ｂの
上面の面積が４０％〜９５％の範囲にあることが好まし
い。また、電極本体１ａの厚みｔ１に対する補助電極１
ｂの厚みｔ２は、１０％〜９０％の範囲にあることが好
ましい。The lower electrode 1 as the high frequency applying electrode
For example, a recess is formed in the bottom of a cylindrical electrode body 1a having a diameter R1 and a thickness t1, and then a diameter R2 and a thickness t1 are formed.
The auxiliary electrode 1b is formed by preparing the cylindrical auxiliary electrode 1b, finishing the boundary between the concave portion and the surface of the auxiliary electrode 1b, and fitting the auxiliary electrode 1b into the concave portion. At this time, the area of the upper surface of the auxiliary electrode 1b with respect to the area of the upper surface of the electrode body 1a is preferably in the range of 40% to 95%. The auxiliary electrode 1 with respect to the thickness t1 of the electrode body 1a
The thickness t2 of b is preferably in the range of 10% to 90%.
【００１７】この数値範囲は、現在使用されている半導
体ウエハの径（２００ｍｍ）と大型化された半導体ウエ
ハの径（３００ｍｍ）とから求めた値であり、Ｒ１を３
００ｍｍ，Ｒ２を２００ｍｍとした場合に電極本体１ａ
の上面の面積に対する補助電極１ｂの上面の面積が４
４．４％となる。そして、Ｒ１に対するＲ２の値を大き
くしていき、機械加工できる上限となったときの電極本
体１ａの上面の面積に対する補助電極１ｂの上面の面積
が９５％となる。This numerical range is a value obtained from the diameter (200 mm) of the semiconductor wafer currently used and the diameter (300 mm) of the enlarged semiconductor wafer.
The electrode body 1a when 00 mm and R2 are 200 mm
The area of the upper surface of the auxiliary electrode 1b with respect to the area of the upper surface of
It becomes 4.4%. Then, the value of R2 with respect to R1 is increased, and the area of the upper surface of the auxiliary electrode 1b with respect to the area of the upper surface of the electrode body 1a when the upper limit of the mechanical processing is reached is 95%.
【００１８】従って、電極本体１ａの上面の面積に対す
る補助電極１ｂの上面の面積が４０％より小さくなる
と、十分な表皮効果の改善が得られず、９５％を超える
と電極本体１ａと補助電極１ｂとからなる高周波印加電
極の作成が困難となる。また、補助電極１ｂの厚みｔ１
の電極本体１ａの厚みｔ２に対する割合は、１０％〜９
０％の範囲にあることが好ましい。ｔ１のｔ２に対する
割合が１０％よりも小さいと、同様に十分な表皮効果の
改善が得られず、９０％を超えると２種類の異なった金
属からなる高周波印加電極の作成が困難となる。Therefore, if the area of the upper surface of the auxiliary electrode 1b with respect to the area of the upper surface of the electrode body 1a is smaller than 40%, a sufficient improvement of the skin effect cannot be obtained, and if it exceeds 95%, the electrode body 1a and the auxiliary electrode 1b will not be improved. It becomes difficult to create a high-frequency application electrode consisting of Also, the thickness t1 of the auxiliary electrode 1b
Of the electrode body 1a to the thickness t2 is 10% to 9%.
It is preferably in the range of 0%. If the ratio of t1 to t2 is less than 10%, the skin effect cannot be sufficiently improved, and if it exceeds 90%, it becomes difficult to produce a high-frequency application electrode made of two different metals.
【００１９】このように構成されたプラズマプロセス装
置では、下部電極１の裏面中心の印加点Ａに高周波電源
６より高周波電力が印加されると、補助電極１ｂを介し
て電極本体１ａに高周波電流が流れる。高周波電流は、
印加点Ａを中心に補助電極１ｂの中を放射状に広がって
いくが、電極本体１ａとの接合部からは電極本体１ａの
中を放射状には広がらずに、補助電極１ｂの外周部と電
極本体１ａとの接合界面を伝わって高周波電流が流れ
る。その後、電極本体１の表面に達した高周波電流によ
って、仮想線ａ１で示すようなプラズマ密度を有するプ
ラズマが発生する。In the plasma processing apparatus thus configured, when high-frequency power is applied from the high-frequency power source 6 to the application point A at the center of the back surface of the lower electrode 1, a high-frequency current is applied to the electrode body 1a via the auxiliary electrode 1b. Flows. The high frequency current is
The radially spread inside the auxiliary electrode 1b around the application point A, but does not spread radially inside the electrode main body 1a from the junction with the electrode main body 1a, but the outer peripheral portion of the auxiliary electrode 1b and the electrode main body 1a A high-frequency current flows along the junction interface with the first la. Thereafter, a plasma having a plasma density as indicated by a virtual line a1 is generated by the high-frequency current reaching the surface of the electrode body 1.
【００２０】このプラズマのプラズマ密度ａ１は、表皮
効果が生じるものの、補助電極１ｂの高周波抵抗が電極
本体１ａの高周波抵抗よりも低くなっているため、矢印
Ｑで示す電極本体１ａの外周部だけでなく、矢印Ｐで示
す補助電極１ｂの外周部と電極本体１ａとの接合部の付
近にもピークが形成される。従って、電極本体１ａの中
央部と外周部とのプラズマ密度のばらつきｈ１は、上記
従来例におけるプラズマ密度のばらつきｈ２よりも小さ
くなり、電極周辺部のプラズマ密度のばらつきを抑える
ことができる。Although the plasma density a1 of this plasma has a skin effect, the high-frequency resistance of the auxiliary electrode 1b is lower than the high-frequency resistance of the electrode body 1a. Instead, a peak is also formed near the joint between the outer peripheral portion of the auxiliary electrode 1b indicated by the arrow P and the electrode main body 1a. Accordingly, the variation h1 in the plasma density between the central portion and the outer peripheral portion of the electrode body 1a is smaller than the variation h2 in the plasma density in the above-described conventional example, and the variation in the plasma density in the peripheral portion of the electrode can be suppressed.
【００２１】このプラズマ密度ａ１の制御は、補助電極
１ｂの大きさを変えることで、所望の位置のプラズマ密
度を制御できる。なお、上記説明では、下部電極１を、
アルミニウムからなる電極本体１ａと銅からなる補助電
極１ｂとから構成したが、補助電極１ｂを電極本体１ａ
よりも低い高周波抵抗の材料にて形成すればその組み合
わせは特に限定されるものではない。In controlling the plasma density a1, the plasma density at a desired position can be controlled by changing the size of the auxiliary electrode 1b. In the above description, the lower electrode 1 is
The electrode body 1a made of aluminum and the auxiliary electrode 1b made of copper were used.
The combination is not particularly limited as long as it is formed of a material having a lower high-frequency resistance.
【００２２】また、上記説明では、アルミニウムからな
る電極本体１ａと銅からなる補助電極１ｂとの２層構造
の高周波印加電極を例に挙げて説明したが、本発明はこ
れに限定されるものではなく、補助電極１ｂを複数の材
質にて形成し、３層以上の構造としてもよい。このよう
なものとしては、例えば、電極本体１ａをアルミニウム
で形成し、補助電極１ｂとして銅を用い、この銅の裏面
に凹部を形成して銅よりも高周波抵抗の低い銀を嵌め込
んだものが考えられる。In the above description, a high-frequency application electrode having a two-layer structure of an electrode body 1a made of aluminum and an auxiliary electrode 1b made of copper has been described as an example, but the present invention is not limited to this. Instead, the auxiliary electrode 1b may be formed of a plurality of materials to have a structure of three or more layers. For example, the electrode body 1a is formed of aluminum, the auxiliary electrode 1b is formed of copper, and a concave portion is formed on the back surface of the copper, and silver having lower high-frequency resistance than copper is fitted therein. Conceivable.
【００２３】あるいは、電極本体１ａと補助電極１ｂと
の間に補助電極１ｂの高周波抵抗よりも低い高周波抵抗
の電極を介装したもの、具体的には電極本体１ａとして
のアルミニウムと補助電極１ｂとしての銅との間に銀を
介装したものでも同様の効果が得られる。また、上記説
明では、下部電極１に本発明の高周波印加電極を用いた
が、本発明はこれに限定されるものではなく、上部電極
２として使用することもできる。Alternatively, an electrode having a high-frequency resistance lower than the high-frequency resistance of the auxiliary electrode 1b is interposed between the electrode main body 1a and the auxiliary electrode 1b, specifically, aluminum as the electrode main body 1a and the auxiliary electrode 1b. The same effect can be obtained even if silver is interposed between the copper and the copper. In the above description, the high-frequency application electrode of the present invention is used for the lower electrode 1, but the present invention is not limited to this, and the lower electrode 1 can be used as the upper electrode 2.
【００２４】また、上記説明では、高周波印加電極とし
て半導体ウエハを加工する円筒形状のものを例に挙げて
説明したが、本発明はこれに限定されるものではなく、
液晶表示装置用のガラス基板を加工する際の矩形状の高
周波印加電極にも同様に適用できる。また、本発明の高
周波印加電極に、例えば半導体ウエハや液晶表示装置用
のガラス基板などを保持するチャッキング装置等の基板
支持部を組み込むことも可能である。具体的には、チャ
ッキング装置として静電吸着機構が挙げられる。In the above description, the high-frequency application electrode has been described by taking as an example a cylindrical electrode for processing a semiconductor wafer, but the present invention is not limited to this.
The present invention can be similarly applied to a rectangular high-frequency application electrode when processing a glass substrate for a liquid crystal display device. Further, it is also possible to incorporate a substrate supporting portion such as a chucking device for holding a semiconductor wafer, a glass substrate for a liquid crystal display device, or the like into the high frequency applying electrode of the present invention. Specifically, an electrostatic suction mechanism is used as the chucking device.
【００２５】[0025]
【発明の効果】以上のように、本発明の高周波印加電極
によると、外部より反応ガスが供給される真空容器内に
対向して配置され、高周波電圧が印加されて前記真空容
器内にプラズマを発生する高周波印加電極であって、少
なくとも一方の側の電極を、電極本体と、前記高周波電
圧が印加され前記電極本体によって表面が被覆されると
ともに前記電極本体よりも高周波抵抗の低い補助電極と
から構成することで、補助電極の大きさを変えることで
プラズマ密度のピーク位置を可変することができ、所望
の位置のプラズマ密度を制御できるため、電極周辺部に
おける高周波電流の集中を防ぐことができる。従って、
被処理物に均一な加工処理を施すことができ、製造工程
の歩留まりの向上が図れる。As described above, according to the high-frequency application electrode of the present invention, the high-frequency voltage is applied and plasma is generated in the vacuum container when the high-frequency voltage is applied to the vacuum container to which the reaction gas is supplied from the outside. A high-frequency application electrode to be generated, wherein at least one electrode is formed from an electrode body and an auxiliary electrode having a high-frequency resistance lower than that of the electrode body, the surface of which is covered with the electrode body when the high-frequency voltage is applied. With this configuration, the peak position of the plasma density can be changed by changing the size of the auxiliary electrode, and the plasma density at a desired position can be controlled, so that the concentration of the high-frequency current in the peripheral portion of the electrode can be prevented. . Therefore,
A uniform processing can be performed on the object to be processed, and the yield of the manufacturing process can be improved.
【図１】本発明の実施の形態におけるプラズマプロセス
装置の構成を示す図FIG. 1 is a diagram illustrating a configuration of a plasma processing apparatus according to an embodiment of the present invention.
【図２】従来のプラズマプロセス装置の構成を示す図FIG. 2 is a diagram showing a configuration of a conventional plasma processing apparatus.
１ 下部電極 １ａ 電極本体 １ｂ 補助電極 ａ１ プラズマ密度 Reference Signs List 1 lower electrode 1a electrode body 1b auxiliary electrode a1 plasma density
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｈ 1/46 Ｈ０１Ｌ 21/302 Ｃ Ｆターム(参考） 4K030 FA03 KA19 KA30 KA46 LA15 LA18 4K057 DA16 DB06 DD01 DG20 DM03 DM06 DM09 DN01 5F004 AA01 BA06 BB22 BD04 CA09 DB01 5F045 AA08 AF03 AF07 AF11 BB02 DP03 EH04 EH08 EH14 Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat II (Reference) H05H 1/46 H01L 21/302 CF term (Reference) 4K030 FA03 KA19 KA30 KA46 LA15 LA18 4K057 DA16 DB06 DD01 DG20 DM03 DM06 DM09 DN01 5F004 AA01 BA06 BB22 BD04 CA09 DB01 5F045 AA08 AF03 AF07 AF11 BB02 DP03 EH04 EH08 EH14
Claims (5)
に対向して配置され、高周波電圧が印加されて前記真空
容器内にプラズマを発生する高周波印加電極であって、 少なくとも一方の側の電極を、電極本体と、前記高周波
電圧が印加され前記電極本体によって表面が被覆される
とともに前記電極本体よりも高周波抵抗の低い補助電極
とから構成した高周波印加電極。1. A high-frequency application electrode, which is disposed opposite to a vacuum vessel to which a reaction gas is supplied from the outside and generates a plasma in the vacuum vessel when a high-frequency voltage is applied, wherein at least one of the electrodes is provided. A high-frequency application electrode comprising: an electrode body; and an auxiliary electrode having a surface covered by the electrode body to which the high-frequency voltage is applied and having a lower high-frequency resistance than the electrode body.
よりも低い高周波抵抗の電極を介装した請求項１記載の
高周波印加電極。2. The high-frequency applying electrode according to claim 1, wherein an electrode having a high-frequency resistance lower than that of the auxiliary electrode is interposed between the electrode body and the auxiliary electrode.
が銅である請求項１記載の高周波印加電極。3. The high frequency application electrode according to claim 1, wherein the electrode body is aluminum and the auxiliary electrode is copper.
上面の面積が４０％〜９５％の範囲であり、前記電極本
体の厚みに対する補助電極の厚みが１０％〜９０％の範
囲である請求項１〜請求項３のいずれかに記載の高周波
印加電極。4. The area of the upper surface of the auxiliary electrode with respect to the area of the upper surface of the electrode body is in a range of 40% to 95%, and the thickness of the auxiliary electrode is in a range of 10% to 90% with respect to the thickness of the electrode body. The high-frequency application electrode according to any one of claims 1 to 3.
に対向して配置された電極に高周波電圧を印加して前記
真空容器内にプラズマを発生させるプラズマプロセス装
置であって、 少なくとも一方の側の電極に、電極本体と、前記高周波
電圧が印加され前記電極本体によって表面が被覆される
とともに前記電極本体よりも高周波抵抗の低い補助電極
とからなる高周波印加電極を用い、 前記補助電極を介して電極本体に電圧を印加し、前記補
助電極の外周部と電極本体との接合部に高周波電流が集
中して流れるように構成したプラズマプロセス装置。5. A plasma processing apparatus for generating a plasma in a vacuum vessel by applying a high-frequency voltage to an electrode disposed in a vacuum vessel to which a reaction gas is supplied from the outside, the plasma processing apparatus comprising: The electrode on the side uses an electrode body and a high-frequency application electrode composed of an auxiliary electrode having a high-frequency resistance applied to the electrode body and a surface covered by the electrode body and having a lower high-frequency resistance than the electrode body. A plasma process apparatus configured to apply a voltage to the electrode body to cause a high-frequency current to flow intensively at a junction between the outer peripheral portion of the auxiliary electrode and the electrode body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32889599A JP2001148368A (en) | 1999-11-19 | 1999-11-19 | High frequency applying electrode and plasma processing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32889599A JP2001148368A (en) | 1999-11-19 | 1999-11-19 | High frequency applying electrode and plasma processing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001148368A true JP2001148368A (en) | 2001-05-29 |
Family
ID=18215301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32889599A Pending JP2001148368A (en) | 1999-11-19 | 1999-11-19 | High frequency applying electrode and plasma processing system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001148368A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004070808A1 (en) * | 2003-02-03 | 2004-08-19 | Octec Inc. | Plasma treating device, and plasma treating device electrode plate, and electrode plate producing method |
| JP2007250860A (en) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | Plasma processor and electrode assembly therefor |
| CN100341120C (en) * | 2002-07-16 | 2007-10-03 | 东京毅力科创株式会社 | Plasma processing device and method thereof |
| JP2020025074A (en) * | 2018-07-30 | 2020-02-13 | Toto株式会社 | Electrostatic chuck |
| JP2021040110A (en) * | 2019-09-05 | 2021-03-11 | Toto株式会社 | Electrostatic chuck |
| JP2021040109A (en) * | 2019-09-05 | 2021-03-11 | Toto株式会社 | Electrostatic chuck |
-
1999
- 1999-11-19 JP JP32889599A patent/JP2001148368A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100341120C (en) * | 2002-07-16 | 2007-10-03 | 东京毅力科创株式会社 | Plasma processing device and method thereof |
| WO2004070808A1 (en) * | 2003-02-03 | 2004-08-19 | Octec Inc. | Plasma treating device, and plasma treating device electrode plate, and electrode plate producing method |
| US7585386B2 (en) | 2003-02-03 | 2009-09-08 | Octec Inc. | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
| US7922862B2 (en) | 2003-02-03 | 2011-04-12 | Octec Inc. | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
| JP2007250860A (en) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | Plasma processor and electrode assembly therefor |
| JP4615464B2 (en) * | 2006-03-16 | 2011-01-19 | 東京エレクトロン株式会社 | Electrode assembly for plasma processing apparatus and plasma processing apparatus |
| JP2020025074A (en) * | 2018-07-30 | 2020-02-13 | Toto株式会社 | Electrostatic chuck |
| JP7232404B2 (en) | 2018-07-30 | 2023-03-03 | Toto株式会社 | electrostatic chuck |
| JP2021040110A (en) * | 2019-09-05 | 2021-03-11 | Toto株式会社 | Electrostatic chuck |
| JP2021040109A (en) * | 2019-09-05 | 2021-03-11 | Toto株式会社 | Electrostatic chuck |
| JP7362030B2 (en) | 2019-09-05 | 2023-10-17 | Toto株式会社 | electrostatic chuck |
| JP7408958B2 (en) | 2019-09-05 | 2024-01-09 | Toto株式会社 | electrostatic chuck |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2501948B2 (en) | Plasma processing method and plasma processing apparatus | |
| JP5294669B2 (en) | Plasma processing equipment | |
| KR101677239B1 (en) | Plasma processing apparatus and plasma processing method | |
| US8152925B2 (en) | Baffle plate and substrate processing apparatus | |
| US5246532A (en) | Plasma processing apparatus | |
| TWI750396B (en) | Thermal spraying method of component for plasma processing apparatus and component for plasma processing apparatus | |
| JPH0625899A (en) | Electroplating device | |
| JP3292270B2 (en) | Electrostatic suction device | |
| JP5361119B2 (en) | Reduction of electrostatic charge by roughening the susceptor | |
| JP2007150012A (en) | Device and method for processing plasma | |
| JP2898635B2 (en) | Method and apparatus for reducing sputtering of a second electrode | |
| JP2021128956A (en) | Mounting table, plasma processing device, and cleaning processing method | |
| US11462430B2 (en) | Ceramic-circuit composite structure and method for making the same | |
| US20220336193A1 (en) | Plasma processing apparatus and plasma processing method | |
| JP2001148368A (en) | High frequency applying electrode and plasma processing system | |
| JP3225850B2 (en) | Electrostatic attraction electrode and method of manufacturing the same | |
| JP4123428B2 (en) | Etching method | |
| JP2000252261A (en) | Plasma process equipment | |
| JP2007246983A (en) | Film deposition apparatus | |
| JPH10326772A (en) | Dry etching device | |
| JPH0437124A (en) | Plasma processor | |
| JP3969907B2 (en) | Plasma processing equipment | |
| JPH11111830A (en) | Electrostatic sucking device and method, and method and device for treatment apparatus using them | |
| US6030510A (en) | Hot reflow sputtering method and apparatus | |
| US20240038507A1 (en) | Substrate support and plasma processing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080726 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110726 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20140726 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |