JP2003347599A - Display element - Google Patents
Display elementInfo
- Publication number
- JP2003347599A JP2003347599A JP2002152502A JP2002152502A JP2003347599A JP 2003347599 A JP2003347599 A JP 2003347599A JP 2002152502 A JP2002152502 A JP 2002152502A JP 2002152502 A JP2002152502 A JP 2002152502A JP 2003347599 A JP2003347599 A JP 2003347599A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- conductive
- conductive layer
- led
- display element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Illuminated Signs And Luminous Advertising (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電極の配置が異な
る複数の発光ダイオード（以下、ＬＥＤという）を備え
た放熱性及び発光効率が優れた表示素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device having a plurality of light emitting diodes (hereinafter, referred to as LEDs) having different electrode arrangements and having excellent heat dissipation and luminous efficiency.
【０００２】[0002]
【従来の技術】ＬＥＤを用いた表示素子は、赤色、緑
色、及び青色の光を発光するＬＥＤを組み合わせること
により、フルカラー表現が可能となり文字情報のみなら
ず映像情報を表示する様々な用途に利用されてきてい
る。ＬＥＤは、小型、薄型、低消費電力及び長寿命等の
特徴を持つため、ＬＥＤを用いた表示素子は放電灯に替
わる表示素子として量産されるようになってきた。2. Description of the Related Art A display element using an LED is capable of full color expression by combining LEDs emitting red, green, and blue light, and is used for various purposes of displaying not only character information but also video information. Have been. Since LEDs have characteristics such as small size, thin shape, low power consumption, and long life, display elements using LEDs have been mass-produced as display elements replacing discharge lamps.
【０００３】通常、ＬＥＤはガラスエポキシ製の合成樹
脂基板に実装することにより、表示装置等の表示素子と
して用いられる。しかし、ＬＥＤは発光効率が消費電力
に対して２０％程度であり、約８０％を熱エネルギーと
して放出するため、合成樹脂基板では、この熱エネルギ
ーを十分放熱することができずＬＥＤの発光強度を低下
させる。[0003] Usually, LEDs are used as display elements such as display devices by mounting them on a synthetic resin substrate made of glass epoxy. However, the luminous efficiency of the LED is about 20% of the power consumption, and about 80% is emitted as heat energy. Lower.
【０００４】そこで、放熱性が優れたアルミニウムから
なる金属基板上にＬＥＤを実装することにより、ＬＥＤ
が放出する熱エネルギーを拡散し、発光強度の低下を抑
制した表示素子が実用化されている。Therefore, by mounting the LED on a metal substrate made of aluminum having excellent heat dissipation, the LED is mounted.
A display element has been put to practical use in which the thermal energy emitted by the LED is diffused and the decrease in the emission intensity is suppressed.
【０００５】図４は、従来の表示素子を示す構造断面図
である。アルミニウム製の基板８０上に、第１絶縁層８
１が設けられている。第１絶縁層８１上には、アルミニ
ウム薄膜をエッチング処理により所定の配線パターンと
した導電層８２が設けられている。FIG. 4 is a structural sectional view showing a conventional display element. A first insulating layer 8 is formed on an aluminum substrate 80.
1 is provided. On the first insulating layer 81, a conductive layer 82 having a predetermined wiring pattern formed by etching an aluminum thin film is provided.
【０００６】導電層８２上には、これと電気的に接続さ
れた複数のアルミニウム製のＬＥＤ搭載部８４，８４，
…，８４が適長離隔して設けられている。またＬＥＤ搭
載部８４，８４，…，８４と電気的に非接続である複数
のアルミニウム製のパッド８５，８５，…，８５が適長
離隔して設けられている。更にＬＥＤ搭載部８４，８
４，…，８４、及びパッド８５，８５，…，８５を設け
た以外の導電層８２上には第２絶縁層８３が設けられて
いる。[0006] On the conductive layer 82, a plurality of aluminum LED mounting portions 84, 84, 84, electrically connected thereto.
, 84 are provided at an appropriate distance. Also, a plurality of aluminum pads 85, 85,... 85 that are not electrically connected to the LED mounting portions 84, 84,. Further, LED mounting parts 84, 8
, 84 and pads 85, 85,..., 85 are provided with a second insulating layer 83 on the conductive layer 82.
【０００７】ＬＥＤ搭載部８４，８４，…，８４上に
は、一面に一電極を有し前記一面の反対の面に他の電極
を有する略直方体のＬＥＤ（以下、チップ型ＬＥＤとい
う）１０，１０，…，１０が設けられ、チップ型ＬＥＤ
１０のアノード電極１１とＬＥＤ搭載部８４とが導電ペ
ーストにより各々接続されている。また、チップ型ＬＥ
Ｄ１０のカソード電極１２は、金線９０によりパッド８
５と各々接続されている。On the LED mounting portions 84, 84,..., 84, a substantially rectangular parallelepiped LED (hereinafter, referred to as a chip type LED) 10, which has one electrode on one surface and another electrode on the surface opposite to the one surface. 10, ..., 10 are provided, and a chip type LED is provided.
The ten anode electrodes 11 and the LED mounting parts 84 are respectively connected by conductive paste. In addition, chip type LE
The cathode electrode 12 of D10 is connected to the pad 8 by a gold wire 90.
5 respectively.
【０００８】これにより、チップ型ＬＥＤ１０，１０，
…，１０の各電極はＬＥＤ搭載部８４，８４，…，８４
及びパッド８５，８５，…，８５を介して配線パターン
が形成された導電層８２と接続されることになる。Accordingly, the chip type LEDs 10, 10,
, 10 are LED mounting portions 84, 84,.
, 85, and the conductive layer 82 on which the wiring pattern is formed.
【０００９】[0009]
【発明が解決しようとする課題】チップ型ＬＥＤを放熱
性が優れた導電性の基板上に実装する場合には、熱エネ
ルギーによる発光強度の低下を抑制することはできる
が、上述したように基板上に２層の絶縁層と配線パター
ンを有する導電層とを形成する必要があり、材料費及び
加工費が増加し高価になるという問題があった。When a chip-type LED is mounted on a conductive substrate having excellent heat dissipation, it is possible to suppress a decrease in luminous intensity due to thermal energy. It is necessary to form a two-layer insulating layer and a conductive layer having a wiring pattern thereon, and there is a problem that material costs and processing costs increase and the cost increases.
【００１０】本発明は斯かる事情に鑑みてなされたもの
であり、配線パターンを有する導電層を基板に形成する
ことなく、チップ型ＬＥＤと一面に一対の電極を有する
ＬＥＤ（以下、ランプ型ＬＥＤという）とを導電性の基
板上に配置できる放熱性が優れた安価な表示素子の提供
を主たる目的とする。[0010] The present invention has been made in view of the above circumstances, and without forming a conductive layer having a wiring pattern on a substrate, a chip-type LED and an LED having a pair of electrodes on one surface (hereinafter, a lamp-type LED). The main object of the present invention is to provide an inexpensive display element having excellent heat dissipation that can be disposed on a conductive substrate.
【００１１】また本発明は、各ＬＥＤを電気的に直列接
続することにより、各ＬＥＤの電流値を同一にさせＬＥ
Ｄの順方向電圧の相違に起因する電流値差異により発生
する発光強度のばらつきを防止した表示素子の提供を目
的とする。Also, according to the present invention, by electrically connecting each LED in series, the current value of each LED is made the same, and
It is an object of the present invention to provide a display element in which a variation in light emission intensity caused by a difference in current value caused by a difference in forward voltage of D is prevented.
【００１２】更に本発明は、各ＬＥＤを光反射性が優れ
た材質からなる基板に配置することにより、基板方向へ
のＬＥＤ光を表示素子の出射方向に反射することがで
き、同一消費電力で発光強度を高めたり、発光強度を維
持しながら消費電力を下げることができる発光効率が優
れた表示素子の提供を目的とする。Further, according to the present invention, by arranging each LED on a substrate made of a material having excellent light reflectivity, it is possible to reflect the LED light in the direction of the substrate in the emission direction of the display element, thereby achieving the same power consumption. It is an object of the present invention to provide a display element with high luminous efficiency, which can increase luminous intensity or reduce power consumption while maintaining luminous intensity.
【００１３】[0013]
【課題を解決するための手段】請求項１に係る表示素子
は、複数の発光ダイオードが導電性の基板上に配置され
た表示素子において、前記基板上に絶縁層と、一面に一
対の電極を有し、前記一面の反対の面を前記基板に対向
した発光ダイオードとが離隔して配置され、前記絶縁層
上に導電層が配置され、該導電層上に一面に一電極を有
し前記一面の反対の面に他の電極を有する発光ダイオー
ドが、該発光ダイオードの一電極と前記導電層とが電気
的に接続されて配置されていることを特徴とする。According to a first aspect of the present invention, there is provided a display element having a plurality of light emitting diodes disposed on a conductive substrate, wherein the display element comprises an insulating layer on the substrate and a pair of electrodes on one surface. A light-emitting diode opposed to the substrate on a surface opposite to the one surface; a conductive layer is disposed on the insulating layer; and the one surface has one electrode on the conductive layer. A light-emitting diode having another electrode on the opposite surface of the light-emitting diode is arranged such that one electrode of the light-emitting diode and the conductive layer are electrically connected to each other.
【００１４】請求項２に係る表示素子は、上述の発明に
おいて、前記二つの発光ダイオードが電気的に直列接続
されていることを特徴とする。According to a second aspect of the present invention, in the above-mentioned invention, the two light emitting diodes are electrically connected in series.
【００１５】請求項３に係る表示素子は、上述の両発明
において、前記基板が可視光領域において光反射率が９
０％以上であることを特徴とする。According to a third aspect of the present invention, in the above two aspects, the substrate has a light reflectance of 9 in a visible light region.
0% or more.
【００１６】請求項１の発明にあっては、導電性基板と
導電層との間には絶縁層が設けられているため、基板を
介して導電層上に設けたＬＥＤは短絡することがないの
で、放熱性が優れた導電性の基板を用いることができ
る。また、特定の配線パターンを有する導電層を基板に
形成することなく、チップ型ＬＥＤとランプ型ＬＥＤと
を配置することができる。According to the first aspect of the present invention, since the insulating layer is provided between the conductive substrate and the conductive layer, the LED provided on the conductive layer via the substrate does not short-circuit. Therefore, a conductive substrate having excellent heat dissipation can be used. Further, the chip-type LED and the lamp-type LED can be arranged without forming a conductive layer having a specific wiring pattern on the substrate.
【００１７】請求項２の発明にあっては、ＬＥＤの順方
向電圧の相違に起因する電流値差異により発生する発光
強度のばらつきを防止することができる。According to the second aspect of the present invention, it is possible to prevent a variation in light emission intensity caused by a difference in a current value caused by a difference in a forward voltage of an LED.
【００１８】請求項３の発明にあっては、ＬＥＤが前記
基板側に発光した可視光を表示素子の光出射側に反射す
ることができるので、表示素子の発光効率を高めること
ができる。According to the third aspect of the present invention, since the LED can reflect the visible light emitted on the substrate side to the light emission side of the display element, the luminous efficiency of the display element can be improved.
【００１９】[0019]
【発明の実施の形態】以下、本発明の表示素子をその実
施の形態を示す図面に基づいて詳述する。図１は、本発
明の実施の形態に係る表示素子を示す平面図であり、図
２は、図１のII―II線における構造断面図である。図中
５０は、アルミニウム又は銅等からなる平面視が略長方
形の基板である。基板側に発光したＬＥＤ光を表示素子
の光出射側に反射することができるよう、可視光領域
（３８０ｎｍ〜７７０ｎｍ）における光反射率が９０％
以上のものを用いるのが好ましい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a display device of the present invention will be described in detail with reference to the drawings showing embodiments thereof. FIG. 1 is a plan view showing a display element according to an embodiment of the present invention, and FIG. 2 is a structural sectional view taken along line II-II in FIG. In the figure, reference numeral 50 denotes a substrate made of aluminum, copper, or the like and having a substantially rectangular shape in plan view. The light reflectance in the visible light region (380 nm to 770 nm) is 90% so that the LED light emitted on the substrate side can be reflected to the light emission side of the display element.
It is preferable to use the above.
【００２０】基板５０上の長手方向の両端部には、サフ
ァイア若しくは石英等の絶縁板、又は酸化膜若しくは窒
化膜等の絶縁膜等からなる平面視が略正方形の絶縁層４
１，４２が接着剤により固定されている。また絶縁層４
１の近傍には、平面視が略長方形の絶縁層４０が、絶縁
層４０の長辺方向を基板５０の長手方向に一致させて、
絶縁層４１と適長離隔して接着剤により固定されてい
る。更に絶縁層４０及び絶縁層４２間の基板５０上に
は、略直方体のランプ型ＬＥＤ２０，ランプ型ＬＥＤ２
５が、両電極を有さない面を基板５０に対向し、絶縁層
４０，４２と各々適長離隔して接着剤により固定されて
いる。On both ends in the longitudinal direction of the substrate 50, an insulating layer 4 made of an insulating plate such as sapphire or quartz, or an insulating film such as an oxide film or a nitride film and having a substantially square shape in plan view.
Reference numerals 1 and 42 are fixed by an adhesive. Insulating layer 4
In the vicinity of 1, an insulating layer 40 having a substantially rectangular shape in a plan view matches the long side direction of the insulating layer 40 with the longitudinal direction of the substrate 50,
It is fixed by an adhesive at an appropriate distance from the insulating layer 41. Further, on the substrate 50 between the insulating layer 40 and the insulating layer 42, a substantially rectangular parallelepiped lamp type LED 20, a lamp type LED 2
5 is opposed to the substrate 50 on the side having neither electrode, and is fixed to the insulating layers 40 and 42 by an adhesive at an appropriate distance from each other.
【００２１】絶縁層４０，４１，及び４２上の各々に
は、該絶縁層より僅かに小さいアルミニウム又は銅等の
導電材料からなる導電層３０，３１，及び３２が接着剤
により固定されている。On each of the insulating layers 40, 41, and 42, conductive layers 30, 31, and 32 made of a conductive material such as aluminum or copper slightly smaller than the insulating layers are fixed by an adhesive.
【００２２】導電層３０上には、略直方体のチップ型Ｌ
ＥＤ１０が、アノード電極１１を有する面を導電層３０
に対向して導電ペーストにより固定されている。またチ
ップ型ＬＥＤ１０のカソード電極１２は、金線又は銅線
等の導電線６０により導電層３１と接続されている。A substantially rectangular parallelepiped chip type L is formed on the conductive layer 30.
The ED 10 has a surface having the anode electrode 11 on the conductive layer 30.
And is fixed by a conductive paste. The cathode electrode 12 of the chip LED 10 is connected to the conductive layer 31 by a conductive line 60 such as a gold wire or a copper wire.
【００２３】ランプ型ＬＥＤ２０のアノード電極２１と
ランプ型ＬＥＤ２５のカソード電極２７とが、導電線６
２により接続されている。ランプ型ＬＥＤ２０のカソー
ド電極２２は、導電線６１により導電層３０と接続され
ている。ランプ型ＬＥＤ２５のアノード電極２６は、導
電線６３により導電層３２と接続されている。従って、
導電層３１及び導線層３２は、チップ型ＬＥＤ１０、ラ
ンプ型ＬＥＤ２０、及びランプ型ＬＥＤ２５が直列接続
された本実施形態の表示素子の電極端子となる。The anode electrode 21 of the lamp type LED 20 and the cathode electrode 27 of the lamp type LED 25 are connected to the conductive wire 6.
2 are connected. The cathode electrode 22 of the lamp type LED 20 is connected to the conductive layer 30 by a conductive line 61. The anode electrode 26 of the lamp type LED 25 is connected to the conductive layer 32 by a conductive line 63. Therefore,
The conductive layer 31 and the conductive layer 32 serve as electrode terminals of the display element of the present embodiment in which the chip LED 10, the lamp LED 20, and the lamp LED 25 are connected in series.
【００２４】チップ型ＬＥＤ１０，ランプ型ＬＥＤ２
０，及びランプ型ＬＥＤ２５の電極を導電線６１，６
２，及び６３により直接接続したが、これの他に基板上
に設けた配線中継用パッドを介して接続してもよい。図
３は、基板上に配線中継用パッドを形成した本発明の他
の実施の形態に係る表示素子を示す平面図である。基板
５０上には、略円形の絶縁層４３，４４が、ランプ型Ｌ
ＥＤ２０，ランプ型ＬＥＤ２５を配置した位置から基板
５０の短手方向に適長離隔して接着剤により各々固定さ
れている。絶縁層４３，４４上の各々には、該絶縁層よ
り僅かに小さい略円形の導電層３３，３４が接着剤によ
り固定されている。導電層３３，３４を配線中継用パッ
ドとして、チップ型ＬＥＤ１０，ランプ型ＬＥＤ２０，
及びランプ型ＬＥＤ２５が導電線６４，６５，６６，及
び６７により接続されている。その他の構成は図１と同
様であるので、対応する部分には同一の符号を付してそ
の詳細な説明を省略する。Chip type LED 10, Lamp type LED 2
0 and the electrodes of the lamp type LED 25 are connected to the conductive lines 61 and 6.
Although the connection is made directly by the lines 2 and 63, the connection may be made via a wiring relay pad provided on the substrate. FIG. 3 is a plan view showing a display element according to another embodiment of the present invention in which wiring relay pads are formed on a substrate. On the substrate 50, substantially circular insulating layers 43, 44
The ED 20 and the lamp-type LED 25 are fixed by an adhesive at an appropriate distance from the position where the ED 20 and the lamp-type LED 25 are arranged in the short direction of the substrate 50. On each of the insulating layers 43 and 44, substantially circular conductive layers 33 and 34 slightly smaller than the insulating layers are fixed by an adhesive. The chip type LED 10, the lamp type LED 20,
And the lamp-type LED 25 are connected by conductive lines 64, 65, 66, and 67. Since other configurations are the same as those in FIG. 1, the corresponding portions are denoted by the same reference numerals and detailed description thereof will be omitted.
【００２５】なお上述の両実施の形態においては、基板
上にチップ型ＬＥＤが１個配置され、ランプ型ＬＥＤが
２個配置された場合について説明したが、チップ型ＬＥ
Ｄが１個配置され、ランプ型ＬＥＤが１個配置された場
合、チップ型ＬＥＤが２個配置され、ランプ型ＬＥＤが
１個配置された場合等々、各ＬＥＤの配置数はこれに限
定されるものではない。In both of the above embodiments, the case where one chip-type LED and two lamp-type LEDs are arranged on the substrate has been described.
When one D is arranged and one lamp-type LED is arranged, when two chip-type LEDs are arranged and one lamp-type LED is arranged, the number of each LED is limited to this. Not something.
【００２６】[0026]
【発明の効果】以上詳述した如く本発明に係る表示素子
によれば、表示素子の構造が非常に簡単であり必要最小
限の導電層及び絶縁層を用いることで、導電層及び絶縁
層の材料費を削減できる。また、特定の配線パターンを
基板に形成する必要がないので導電層の加工費を大幅に
削減できる。更に、所望の位置に所望のＬＥＤを配置し
た後に配線することができるので、多種多様な表示素子
を製造できる汎用性を有する。更にまた、放熱性が優れ
た導電性基板にチップ型ＬＥＤとランプ型ＬＥＤとを実
装することができるので、熱エネルギーによるＬＥＤの
発光強度低下を抑制することができる。As described in detail above, according to the display element of the present invention, the structure of the display element is very simple, and the minimum number of conductive layers and insulating layers is used. Material costs can be reduced. Further, since it is not necessary to form a specific wiring pattern on the substrate, the processing cost of the conductive layer can be significantly reduced. Furthermore, since wiring can be performed after a desired LED is arranged at a desired position, it has versatility to manufacture a variety of display elements. Furthermore, since the chip-type LED and the lamp-type LED can be mounted on a conductive substrate having excellent heat dissipation, a decrease in the emission intensity of the LED due to heat energy can be suppressed.
【００２７】また本発明に係る表示素子によれば、ＬＥ
Ｄを電気的に直列接続した場合には、各ＬＥＤに流れる
電流値が同一となるため、電流値の相違に起因する発光
強度のばらつきを抑えた表示品質が優れた表示素子を提
供することができる。According to the display element of the present invention, the LE
When D is electrically connected in series, the current value flowing through each LED is the same, so that it is possible to provide a display element with excellent display quality in which variation in light emission intensity caused by a difference in current value is suppressed. it can.
【００２８】更に本発明に係る表示素子によれば、可視
光領域における光反射率が９０％以上の材質からなる基
板を用いることにより、表示素子の発光効率を高めるこ
とができ、同一消費電力で発光強度を高めたり、発光強
度を維持しながら消費電力を下げることができる等、優
れた効果を奏する。Further, according to the display element of the present invention, the luminous efficiency of the display element can be increased by using a substrate having a light reflectance of 90% or more in the visible light region, and the same power consumption can be obtained. Excellent effects are achieved, such as being able to increase the light emission intensity and reduce power consumption while maintaining the light emission intensity.
【図１】本発明の実施の形態に係る表示素子を示す平面
図である。FIG. 1 is a plan view showing a display element according to an embodiment of the present invention.
【図２】図１のII―II線における構造断面図である。FIG. 2 is a structural sectional view taken along line II-II in FIG.
【図３】本発明の他の実施の形態に係る表示素子を示す
平面図である。FIG. 3 is a plan view showing a display element according to another embodiment of the present invention.
【図４】従来の表示素子を示す構造断面図である。FIG. 4 is a structural sectional view showing a conventional display element.
１０ チップ型ＬＥＤ
２０，２５ ランプ型ＬＥＤ
３０，３１，３２，３３，３４ 導電層
４０，４１，４２，４３，４４ 絶縁層
５０ 基板
６０，６１，６２，６３，６４，６５，６６，６７ 導
電線Reference Signs List 10 chip type LED 20, 25 lamp type LED 30, 31, 32, 33, 34 conductive layer 40, 41, 42, 43, 44 insulating layer 50 substrate 60, 61, 62, 63, 64, 65, 66, 67 conductive line
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5C096 AA16 AA27 BA04 BB45 CC06 5F041 AA33 DA07 DA14 DA19 DA20 DA33 DA36 ────────────────────────────────────────────────── ─── Continuation of front page F term (reference) 5C096 AA16 AA27 BA04 BB45 CC06 5F041 AA33 DA07 DA14 DA19 DA20 DA33 DA36
Claims (3)
に配置された表示素子において、 前記基板上に絶縁層と、一面に一対の電極を有し、前記
一面の反対の面を前記基板に対向した発光ダイオードと
が離隔して配置され、 前記絶縁層上に導電層が配置され、 該導電層上に一面に一電極を有し前記一面の反対の面に
他の電極を有する発光ダイオードが、該発光ダイオード
の一電極と前記導電層とが電気的に接続されて配置され
ていることを特徴とする表示素子。1. A display element in which a plurality of light emitting diodes are arranged on a conductive substrate, the display element having an insulating layer on the substrate, a pair of electrodes on one surface, and a surface opposite to the one surface on the substrate. An opposing light emitting diode is disposed apart from the light emitting diode, a conductive layer is disposed on the insulating layer, and a light emitting diode having one electrode on one surface and another electrode on the surface opposite to the one surface is provided on the conductive layer. A display element, wherein one electrode of the light emitting diode and the conductive layer are electrically connected to each other.
直列接続されていることを特徴とする請求項１に記載の
表示素子。2. The display device according to claim 1, wherein the two light emitting diodes are electrically connected in series.
率が９０％以上であることを特徴とする請求項１又は請
求項２に記載の表示素子。3. The display device according to claim 1, wherein the substrate has a light reflectance of 90% or more in a visible light region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002152502A JP2003347599A (en) | 2002-05-27 | 2002-05-27 | Display element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002152502A JP2003347599A (en) | 2002-05-27 | 2002-05-27 | Display element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003347599A true JP2003347599A (en) | 2003-12-05 |
Family
ID=29769821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002152502A Pending JP2003347599A (en) | 2002-05-27 | 2002-05-27 | Display element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003347599A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008508706A (en) * | 2004-07-27 | 2008-03-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Light emitting diode assembly |
| JP2008078401A (en) * | 2006-09-21 | 2008-04-03 | Toshiba Lighting & Technology Corp | Lighting device |
| JP2011049608A (en) * | 2010-12-07 | 2011-03-10 | Hitachi Chem Co Ltd | Substrate for mounting light emitting element and manufacturing method of the same |
| JP2014504373A (en) * | 2010-12-02 | 2014-02-20 | ミレ エルイーディ カンパニー リミテッド | Signboard lighting system using LED module and reflector |
-
2002
- 2002-05-27 JP JP2002152502A patent/JP2003347599A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008508706A (en) * | 2004-07-27 | 2008-03-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Light emitting diode assembly |
| JP2008078401A (en) * | 2006-09-21 | 2008-04-03 | Toshiba Lighting & Technology Corp | Lighting device |
| JP2014504373A (en) * | 2010-12-02 | 2014-02-20 | ミレ エルイーディ カンパニー リミテッド | Signboard lighting system using LED module and reflector |
| JP2011049608A (en) * | 2010-12-07 | 2011-03-10 | Hitachi Chem Co Ltd | Substrate for mounting light emitting element and manufacturing method of the same |
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