JP2003334812A5 - - Google Patents
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- Publication number
- JP2003334812A5 JP2003334812A5 JP2003067281A JP2003067281A JP2003334812A5 JP 2003334812 A5 JP2003334812 A5 JP 2003334812A5 JP 2003067281 A JP2003067281 A JP 2003067281A JP 2003067281 A JP2003067281 A JP 2003067281A JP 2003334812 A5 JP2003334812 A5 JP 2003334812A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- cutting
- substrate
- workpiece
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 18
- 238000003672 processing method Methods 0.000 claims 13
- 230000001678 irradiating Effects 0.000 claims 3
- 101710027952 VEPH1 Proteins 0.000 claims 2
- 238000010521 absorption reaction Methods 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 2
- 239000000155 melt Substances 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000010128 melt processing Methods 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003067281A JP3670267B2 (ja) | 2002-03-12 | 2003-03-12 | レーザ加工方法 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-67372 | 2002-03-12 | ||
JP2002067348 | 2002-03-12 | ||
JP2002067372 | 2002-03-12 | ||
JP2002-67348 | 2002-03-12 | ||
JP2003067281A JP3670267B2 (ja) | 2002-03-12 | 2003-03-12 | レーザ加工方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004280377A Division JP4509720B2 (ja) | 2002-03-12 | 2004-09-27 | レーザ加工方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003334812A JP2003334812A (ja) | 2003-11-25 |
JP2003334812A5 true JP2003334812A5 (zh) | 2005-04-07 |
JP3670267B2 JP3670267B2 (ja) | 2005-07-13 |
Family
ID=29715898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003067281A Expired - Lifetime JP3670267B2 (ja) | 2002-03-12 | 2003-03-12 | レーザ加工方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3670267B2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8263479B2 (en) | 2002-12-03 | 2012-09-11 | Hamamatsu Photonics K.K. | Method for cutting semiconductor substrate |
US8268704B2 (en) | 2002-03-12 | 2012-09-18 | Hamamatsu Photonics K.K. | Method for dicing substrate |
US8361883B2 (en) | 2002-03-12 | 2013-01-29 | Hamamatsu Photonics K.K. | Laser processing method |
US8551817B2 (en) | 2003-09-10 | 2013-10-08 | Hamamatsu Photonics K.K. | Semiconductor substrate cutting method |
US8716110B2 (en) | 2000-09-13 | 2014-05-06 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI326626B (en) | 2002-03-12 | 2010-07-01 | Hamamatsu Photonics Kk | Laser processing method |
FR2852250B1 (fr) | 2003-03-11 | 2009-07-24 | Jean Luc Jouvin | Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau |
WO2004080643A1 (ja) | 2003-03-12 | 2004-09-23 | Hamamatsu Photonics K.K. | レーザ加工方法 |
JP2005251986A (ja) * | 2004-03-04 | 2005-09-15 | Disco Abrasive Syst Ltd | ウエーハの分離検出方法および分離検出装置 |
KR101336523B1 (ko) * | 2004-03-30 | 2013-12-03 | 하마마츠 포토닉스 가부시키가이샤 | 레이저 가공 방법 및 반도체 칩 |
SG156607A1 (en) * | 2004-07-30 | 2009-11-26 | Mitsuboshi Diamond Ind Co Ltd | Method for forming median crack in substrate and apparatus for forming median crack in substrate |
JP4781661B2 (ja) | 2004-11-12 | 2011-09-28 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP4917257B2 (ja) * | 2004-11-12 | 2012-04-18 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP2006150385A (ja) * | 2004-11-26 | 2006-06-15 | Canon Inc | レーザ割断方法 |
JP4776994B2 (ja) | 2005-07-04 | 2011-09-21 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
JP4552791B2 (ja) * | 2005-07-20 | 2010-09-29 | セイコーエプソン株式会社 | 基板分割方法 |
JP4816406B2 (ja) * | 2005-11-16 | 2011-11-16 | 株式会社デンソー | ウェハの加工方法 |
JP4816390B2 (ja) * | 2005-11-16 | 2011-11-16 | 株式会社デンソー | 半導体チップの製造方法および半導体チップ |
CN102623373B (zh) | 2007-05-25 | 2015-07-15 | 浜松光子学株式会社 | 切断用加工方法 |
JP5093922B2 (ja) * | 2007-09-27 | 2012-12-12 | シチズンファインテックミヨタ株式会社 | 圧電デバイスの製造方法 |
JP5258671B2 (ja) * | 2009-05-28 | 2013-08-07 | 三菱化学株式会社 | 窒化物系半導体素子の製造方法 |
JP6059499B2 (ja) | 2012-10-05 | 2017-01-11 | リンテック株式会社 | 表面保護シート |
JP5998968B2 (ja) * | 2013-02-04 | 2016-09-28 | 旭硝子株式会社 | ガラス基板の切断方法、ガラス基板及び近赤外線カットフィルタガラス |
KR102399356B1 (ko) * | 2017-03-10 | 2022-05-19 | 삼성전자주식회사 | 기판, 기판의 쏘잉 방법, 및 반도체 소자 |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
-
2003
- 2003-03-12 JP JP2003067281A patent/JP3670267B2/ja not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8716110B2 (en) | 2000-09-13 | 2014-05-06 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US8927900B2 (en) | 2000-09-13 | 2015-01-06 | Hamamatsu Photonics K.K. | Method of cutting a substrate, method of processing a wafer-like object, and method of manufacturing a semiconductor device |
US8933369B2 (en) | 2000-09-13 | 2015-01-13 | Hamamatsu Photonics K.K. | Method of cutting a substrate and method of manufacturing a semiconductor device |
US8268704B2 (en) | 2002-03-12 | 2012-09-18 | Hamamatsu Photonics K.K. | Method for dicing substrate |
US8304325B2 (en) | 2002-03-12 | 2012-11-06 | Hamamatsu-Photonics K.K. | Substrate dividing method |
US8361883B2 (en) | 2002-03-12 | 2013-01-29 | Hamamatsu Photonics K.K. | Laser processing method |
US8263479B2 (en) | 2002-12-03 | 2012-09-11 | Hamamatsu Photonics K.K. | Method for cutting semiconductor substrate |
US8551817B2 (en) | 2003-09-10 | 2013-10-08 | Hamamatsu Photonics K.K. | Semiconductor substrate cutting method |
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