JP2003323980A - Vapor deposition mask for organic el element and its manufacturing method - Google Patents
Vapor deposition mask for organic el element and its manufacturing methodInfo
- Publication number
- JP2003323980A JP2003323980A JP2002127452A JP2002127452A JP2003323980A JP 2003323980 A JP2003323980 A JP 2003323980A JP 2002127452 A JP2002127452 A JP 2002127452A JP 2002127452 A JP2002127452 A JP 2002127452A JP 2003323980 A JP2003323980 A JP 2003323980A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- mask
- resist
- organic
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 152
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000004070 electrodeposition Methods 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 31
- 238000005323 electroforming Methods 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 230000001850 reproductive effect Effects 0.000 abstract 2
- 230000003578 releasing effect Effects 0.000 abstract 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 35
- 230000002093 peripheral effect Effects 0.000 description 15
- 239000011521 glass Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910000990 Ni alloy Inorganic materials 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000002452 interceptive effect Effects 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 238000005282 brightening Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、蒸着マスク法で有
機ＥＬ素子の発光層を形成する際に用いられる有機ＥＬ
素子用蒸着マスク、およびこの有機ＥＬ素子用蒸着マス
クの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL used when forming a light emitting layer of an organic EL element by a vapor deposition mask method.
The present invention relates to a vapor deposition mask for devices and a method for manufacturing the vapor deposition mask for organic EL devices.
【０００２】[0002]
【従来の技術】ＣＲＴや液晶に替わる表示装置として、
光透過性の基板上に、有機化合物材料からなる赤
（Ｒ）、緑（Ｇ）、青（Ｂ）の３色の発光層がマトリッ
クス状やストライプ状などの各種パターンで配列された
有機ＥＬ（エレクトロルミネッセンス）表示パネルがあ
る。有機ＥＬ素子の発光層の形成方法としては、蒸着マ
スク法に代表されるドライプロセスによることが、精
度、生産性などの観点からして有利であることは広く知
られている。図２０に示すように従来例に係る蒸着マス
ク法においては、素子の基板２に発色層５１の形成パタ
ーンに対応する蒸着通孔５２を有する蒸着マスク５０を
密着させて、該通孔５２の部分のみに気化源により気化
された有機材料を蒸着させて、基板２上に発色層５１を
形成する。蒸着マスク５０は、ステンレス、鉄、ニッケ
ル合金等を素材とする。2. Description of the Related Art As a display device replacing a CRT or a liquid crystal,
An organic EL (light emitting layer of three colors of red (R), green (G), and blue (B) made of an organic compound material is arranged in various patterns such as a matrix or a stripe on a light-transmissive substrate. There is an electroluminescence display panel. It is widely known that, as a method of forming a light emitting layer of an organic EL element, a dry process represented by a vapor deposition mask method is advantageous in terms of accuracy and productivity. As shown in FIG. 20, in the vapor deposition mask method according to the conventional example, the vapor deposition mask 50 having the vapor deposition through holes 52 corresponding to the formation pattern of the color forming layer 51 is brought into close contact with the substrate 2 of the device, and the portion of the through holes 52 is formed. Then, the organic material vaporized by the vaporization source is vapor-deposited to form the coloring layer 51 on the substrate 2. The vapor deposition mask 50 is made of stainless steel, iron, nickel alloy or the like.
【０００３】[0003]
【発明が解決しようとする課題】しかし、この蒸着マス
ク５０では、有機材料が蒸着通孔５２の内周面に食い付
くために基板２に対する離型性が悪く、さらに発光層５
１の周縁がマスク５０の開口エッジ５２ａでこそぎ取ら
れて欠け５３ができやすい。このように欠け５３のある
発光層５１は、輝度にムラがあり、有機ＥＬ素子の高精
度化を図るうえで大きな障害となる。However, in this vapor deposition mask 50, since the organic material bites on the inner peripheral surface of the vapor deposition through hole 52, the releasability from the substrate 2 is poor, and further the light emitting layer 5 is used.
The peripheral edge of No. 1 is scraped off by the opening edge 52a of the mask 50, and a chip 53 is easily formed. As described above, the light emitting layer 51 having the cutout 53 has uneven brightness, which is a major obstacle in improving the accuracy of the organic EL element.
【０００４】また、現行における蒸着マスクの通孔の製
造方法としては、ウエットエッチングによる方法やレー
ザーによる方法などがあるが、ウエットエッチングによ
る方法では、精度良く形成することができない。また、
レーザーによる場合には、形成する蒸着通孔の数が多い
と製造コストが高くつき、また、形成時に熱の影響を受
けて通孔周りに熱反応による反り、すなわちうねりが生
じやすく、位置精度が低下するなどの問題もある。In addition, as a method for manufacturing the through holes of the vapor deposition mask at present, there are a wet etching method and a laser method, but the wet etching method cannot be formed accurately. Also,
In the case of using a laser, if the number of vapor deposition through holes to be formed is large, the manufacturing cost is high, and the warp due to thermal reaction around the through holes, that is, waviness is likely to occur due to the influence of heat at the time of formation, and the positional accuracy is high. There are also problems such as deterioration.
【０００５】本発明の目的は、均一な形状を有する発光
層を高精度に再現性良く形成することができ、さらに安
価に製造可能な有機ＥＬ素子用蒸着マスクとその製造方
法を得るにある。An object of the present invention is to obtain a vapor deposition mask for an organic EL device, which can form a light emitting layer having a uniform shape with high accuracy and reproducibility, and can be manufactured at low cost, and a manufacturing method thereof.
【０００６】[0006]
【課題を解決するための手段】本発明は、図１に示すご
とく電着金属からなるマスク本体３に、発光層５形成用
の蒸着通孔６が上下貫通状に多数独立して設けられてい
る有機ＥＬ素子用の蒸着マスクにおいて、蒸着マスクの
上面側、すなわち発光層５の蒸着対象である基板２との
対向面側に、該基板２に対する離型性向上用の凸部７
が、上方向に突出状に設けられていることを特徴とす
る。凸部７の突出高さ寸法ｈは、１〜１０μｍの範囲に
あることが望ましい。According to the present invention, as shown in FIG. 1, a mask main body 3 made of an electrodeposited metal is provided with a large number of vapor deposition through holes 6 for forming a light emitting layer 5 which are independently formed in a vertically penetrating manner. In the vapor deposition mask for the organic EL element, the convex portion 7 for improving the releasability of the substrate 2 is provided on the upper surface side of the vapor deposition mask, that is, on the surface side of the light emitting layer 5 facing the substrate 2 to be vapor deposited.
Is provided so as to project upward. The protruding height dimension h of the convex portion 7 is preferably in the range of 1 to 10 μm.
【０００７】具体的には、図３および図６に示すごとく
多数の蒸着通孔６を配列形成して、蒸着通孔６の列の間
に、多数独立した凸部７を分断列状に並設することがで
きる。この場合には、図７に示すごとく、各凸部７が基
板２に対して点状に接触できるような形状であることが
望ましい。Specifically, as shown in FIGS. 3 and 6, a large number of vapor deposition through holes 6 are formed in an array, and a large number of independent convex portions 7 are arranged in a row between the rows of the vapor deposition through holes 6. Can be installed. In this case, as shown in FIG. 7, it is desirable that each convex portion 7 has a shape capable of making point-like contact with the substrate 2.
【０００８】図９および図１０に示すごとく、蒸着通孔
６の列の間に、前後に長いリブ状の凸部７を設けること
もできる。As shown in FIGS. 9 and 10, long rib-shaped convex portions 7 may be provided in the front and rear between the rows of vapor deposition through holes 6.
【０００９】また、本発明は、電着金属からなるマスク
本体３に、基板２に発光層５を形成するための蒸着通孔
６が上下貫通状に多数独立して設けられている有機ＥＬ
素子用の蒸着マスクの製造方法において、図４（ｃ）に
示すごとく母型１０の表面に、レジスト体１３ａを有す
る一次パターンレジスト１３を設ける第１のパターンニ
ング工程と、図４（ｄ）に示すごとく母型１０上に電着
金属を電鋳して、一次電着層１４を形成する第１の電鋳
工程と、図５（ａ）に示すごとくレジスト体１３ａの上
面に、上記一次電着層１４の任意の位置に対応する開口
１８ｂを有する二次パターンレジスト１８を設ける第２
のパターンニング工程と、図５（ｂ）に示すごとく一次
電着層１４上の上記開口１８ｂと対応する一に電着金属
を電鋳して、該一次電着層１４と一体不可分的に二次電
着層１９を形成する第２の電鋳工程と、母型３０から一
次および二次電着層１４・１９を剥離する剥離工程と、
前記剥離工程と前後して、一次および二次パターンレジ
スト１３・１８を除去する工程とを含むことを特徴とす
る。これによれば、一次パターンレジスト１３のレジス
ト体１３ａの除去に伴い、一次電着層１４には蒸着通孔
６が形成され、二次パターンレジスト１８の開口１８ｂ
に形成された二次電着層１９が、基板２に対する離型性
向上用の凸部７となる。パターンレジスト１３・１８
は、フォトレジスト等を使用したリソグラフィー法その
他の任意の方法で形成でき、パターンレジスト１３・１
８の形成手段は問わない。Further, according to the present invention, a large number of vapor deposition through holes 6 for forming the light emitting layer 5 on the substrate 2 are independently provided in the mask body 3 made of an electrodeposited metal in a vertically penetrating manner.
In the method of manufacturing a vapor deposition mask for a device, as shown in FIG. 4 (c), a first patterning step of providing a primary pattern resist 13 having a resist body 13a on the surface of a mother die 10 and FIG. 4 (d). As shown in the first electroforming step of electroforming an electro-deposited metal on the mother die 10 to form the primary electro-deposited layer 14, and as shown in FIG. A second pattern resist 18 having an opening 18b corresponding to an arbitrary position of the adhesion layer 14 is provided.
And the electrodeposition metal corresponding to the opening 18b on the primary electrodeposition layer 14 as shown in FIG. A second electroforming step of forming the next electrodeposition layer 19, and a peeling step of peeling the primary and secondary electrodeposition layers 14 and 19 from the matrix 30.
Before and after the peeling step, a step of removing the primary and secondary pattern resists 13 and 18 is included. According to this, as the resist body 13a of the primary pattern resist 13 is removed, the vapor deposition through holes 6 are formed in the primary electrodeposition layer 14, and the openings 18b of the secondary pattern resist 18 are formed.
The secondary electrodeposition layer 19 formed on the substrate 2 becomes the convex portion 7 for improving the releasability from the substrate 2. Pattern resist 13 ・ 18
Can be formed by a lithographic method or another method using a photoresist or the like.
The forming means of 8 does not matter.
【００１０】図３に示すような有機ＥＬ素子用蒸着マス
クを製造するには、二次パターンレジスト１８に、各蒸
着通孔６間に隣接対応させて多数独立の開口１８ｂ（四
角形状）を設けて、これら開口１８ｂに、多数独立の凸
部７を電鋳形成すればよい。In order to manufacture a vapor deposition mask for an organic EL device as shown in FIG. 3, a large number of independent openings 18b (rectangular shape) are provided in the secondary pattern resist 18 so as to be adjacent between the vapor deposition through holes 6. Then, a large number of independent protrusions 7 may be electroformed in these openings 18b.
【００１１】図６に示すような有機ＥＬ素子用蒸着マス
クを製造するには、先の図５（ａ）および図５（ｂ）の
工程に替えて、図８（ａ）に示すごとく、一次電着層１
４上に、先の開口１８ｂの形状とは異なる円形の開口を
備えた二次パターンレジスト１８を例えば１〜３μｍの
範囲で薄く設ける第２のパターンニング工程と、図８
（ｂ）に示すごとく、レジスト体１８ａの高さを超え
て、これをオーバーハングするように一次電着層１４上
に電着金属を電鋳して、該一次電着層１４と一体不可分
的に二次電着層１９を形成する第２の電鋳工程とを採れ
ばよい。これによっても一次パターンレジスト１３のレ
ジスト体１３ａの除去に伴い、一次電着層１４には蒸着
通孔６が形成され、二次パターンレジスト１８の開口１
８ｂに、基板２に対する離型性向上用の凸部７を形成す
ることができる。In order to manufacture a vapor deposition mask for an organic EL device as shown in FIG. 6, the primary process is performed as shown in FIG. 8A instead of the steps shown in FIGS. 5A and 5B. Electrodeposited layer 1
8, a second patterning step of thinly forming a secondary pattern resist 18 having a circular opening different from the shape of the opening 18b on the surface of 4 in a range of 1 to 3 μm, for example.
As shown in (b), an electrodeposited metal is electroformed on the primary electrodeposition layer 14 so as to exceed the height of the resist body 18a and overhang it, and is inseparable integrally with the primary electrodeposition layer 14. The second electroforming step of forming the secondary electrodeposition layer 19 may be adopted. With this, as the resist body 13a of the primary pattern resist 13 is removed, the vapor deposition through holes 6 are formed in the primary electrodeposition layer 14, and the openings 1 of the secondary pattern resist 18 are formed.
The protrusion 7 for improving the releasability of the substrate 2 can be formed on 8b.
【００１２】図９に示すような有機ＥＬ素子用蒸着マス
クを製造するには、多数独立の開口１８ｂを有する二次
パターンレジスト１８に替えて、前後方向に長い列状の
開口１８ｂがストライプ状に設けてある二次パターンレ
ジスト１８を用いればよく、これにて、開口１８ｂに対
応して、前後に長いリブ状の凸部７を電鋳形成すること
ができる。In order to manufacture the vapor deposition mask for an organic EL device as shown in FIG. 9, instead of the secondary pattern resist 18 having a large number of independent openings 18b, openings 18b arranged in rows in the front-rear direction are formed in stripes. It is only necessary to use the provided secondary pattern resist 18, and by this, the rib-shaped convex portions 7 which are long in the front and rear direction can be electroformed corresponding to the openings 18b.
【００１３】さらに、図９に示すような有機ＥＬ素子用
蒸着マスクは、図１１および図１２に示すような手順に
よっても製造できる。つまり、図１１（ａ）に示すごと
く母型３０上に、前後方向に長い列状のレジスト体３１
ａを有するエッチングレジスト３１を設ける第１のパタ
ーンニング工程と、図１１（ｂ）に示すごとくレジスト
体３１ａの左右方向の間隙にかかる母型３０の表面をエ
ッチングして、凹溝３２を形成するエッチング工程と、
図１１（ｃ）に示すごとく凹溝３２を埋めるようにエッ
チングレジストを再コートしてから、図１２（ａ）に示
すごとく多数独立のレジスト体３４ａを有するパターン
レジスト３４を設ける第２のパターンニング工程と、図
１２（ｂ）に示すごとくレジスト体３４ａを除く、母型
３０上に電着金属を電鋳して、電着層３５を形成する電
鋳工程と、レジスト体３４ａを除去するレジスト除去工
程と、母型３０から電着層３５を剥離する剥離工程とを
含むような製造方法を採ってもよい。これによれば、レ
ジスト体３４ａの除去に伴い、電着層３５に蒸着通孔６
が形成される。また、母型３０の凹溝３２内に電鋳形成
された電着層３５の部分が、基板２に対する剥離性向上
用の凸部７となる。Further, the vapor deposition mask for an organic EL device as shown in FIG. 9 can be manufactured by the procedure as shown in FIGS. 11 and 12. That is, as shown in FIG. 11A, a resist body 31 in a long line in the front-rear direction is formed on the mother die 30.
A first patterning step of providing an etching resist 31 having a and, as shown in FIG. 11 (b), the surface of the mother die 30 in the lateral gap of the resist body 31 a is etched to form a groove 32. Etching process,
Second patterning in which the etching resist is recoated so as to fill the concave groove 32 as shown in FIG. 11C, and then the pattern resist 34 having a plurality of independent resist bodies 34a is provided as shown in FIG. 12A. Steps, an electroforming step of forming an electrodeposition layer 35 by electroforming an electrodeposited metal on the mother die 30 excluding the resist body 34a as shown in FIG. 12B, and a resist removing the resist body 34a. A manufacturing method including a removing step and a peeling step of peeling the electrodeposition layer 35 from the mother die 30 may be adopted. According to this, as the resist body 34a is removed, the vapor deposition through holes 6 are formed in the electrodeposition layer 35.
Is formed. Further, the portion of the electrodeposition layer 35 formed by electroforming in the concave groove 32 of the mother die 30 becomes the convex portion 7 for improving the peeling property with respect to the substrate 2.
【００１４】また、マスク本体３の周縁に、金属製の枠
体４を貼り付ける枠貼り付け工程を含ませることができ
る。この場合には、当該枠貼り付け工程を、剥離工程に
先立って行うようにすることが好ましい。A frame attaching step of attaching the metal frame 4 to the periphery of the mask body 3 can be included. In this case, it is preferable that the frame attaching step is performed before the peeling step.
【００１５】[0015]
【発明の作用効果】図２０に示すように、基板２と蒸着
マスク５０とが密着するような姿勢で蒸着作業を行う
と、蒸着作業後の基板２に対する蒸着マスク５０の離版
時に、基板２上に蒸着された発光層５１の周縁がマスク
５０の開口エッジ５２ａでこそぎ取られて、欠け５３が
生じる不具合がある。この点、本発明に係る有機ＥＬ素
子用蒸着マスクによれば、図１に示すごとく蒸着マスク
１の上面側、すなわち発光層５の蒸着対象である基板２
との対向面側に、凸部７を上方向に突出状に設けたの
で、該凸部７の上端のみが基板２に接触するような姿勢
で蒸着作業を進めて、当該作業終了後は発光層５に干渉
することなく蒸着マスク１をガラス基板２から離間させ
ることができる。従って、マスク本体３を基板２と密着
させた場合に不可避の発光層５の欠けを効果的に防い
で、均一な形状を有する発光層５を高精度に再現性良く
形成できる。As shown in FIG. 20, when the vapor deposition work is performed in such a posture that the substrate 2 and the vapor deposition mask 50 are in close contact with each other, the substrate 2 is removed when the vapor deposition mask 50 is separated from the substrate 2 after the vapor deposition work. There is a problem that the peripheral edge of the light emitting layer 51 vapor-deposited thereon is scraped off by the opening edge 52a of the mask 50, and a chip 53 is generated. In this respect, according to the vapor deposition mask for an organic EL element of the present invention, as shown in FIG. 1, the upper surface side of the vapor deposition mask 1, that is, the substrate 2 which is the vapor deposition target of the light emitting layer 5 is formed.
Since the convex portion 7 is provided so as to project upward on the surface facing the and, the vapor deposition work is advanced in such a posture that only the upper end of the convex portion 7 comes into contact with the substrate 2, and light is emitted after the work is completed. The vapor deposition mask 1 can be separated from the glass substrate 2 without interfering with the layer 5. Therefore, it is possible to effectively prevent the inevitable chipping of the light emitting layer 5 when the mask body 3 is brought into close contact with the substrate 2, and to form the light emitting layer 5 having a uniform shape with high accuracy and reproducibility.
【００１６】また、凸部７の存在により、マスク本体３
全体が補強されるため、蒸着マスク１の全体強度が増
し、自重によって撓みにくくできる。従って、蒸着装置
内での位置合せ精度にバラツキが生じるような不具合が
一切生じず、発光層５の位置精度や再現性の向上を図る
ことができる。Further, due to the presence of the convex portion 7, the mask body 3
Since the whole is reinforced, the overall strength of the vapor deposition mask 1 is increased, and it is possible to prevent the vapor deposition mask 1 from bending due to its own weight. Therefore, no inconvenience such as variation in the alignment accuracy in the vapor deposition device occurs, and the position accuracy and reproducibility of the light emitting layer 5 can be improved.
【００１７】本発明においては、図１に示すように凸部
７の突出高さ寸法を、１〜１０μｍの範囲に設定する。
凸部７の高さ寸法が１μｍ未満であると、離型性の向上
効果が得られにくく、高さ寸法が１０μｍを超えると、
マスク１の裏面に蒸着物質が回り込んで、蒸着領域と非
蒸着領域との境界に滲みが生じて、発光層５の周縁が不
明瞭になる不具合がある。In the present invention, as shown in FIG. 1, the protrusion height dimension of the convex portion 7 is set in the range of 1 to 10 μm.
When the height dimension of the convex portion 7 is less than 1 μm, it is difficult to obtain the effect of improving the releasability, and when the height dimension exceeds 10 μm,
There is a problem that the vapor deposition material wraps around the back surface of the mask 1 and bleeds at the boundary between the vapor deposition region and the non-vapor deposition region, so that the peripheral edge of the light emitting layer 5 becomes unclear.
【００１８】図３に示すごとく、蒸着通孔６の列の間に
多数独立した凸部７を分断列状に並設したのは、基板２
との接触面積を小さくして、離型性の向上を図るためで
ある。さらに、図６および図７に示すごとく各凸部７を
周縁から中央に行くに従って漸次厚みが増す先窄まりの
テーパー状としてあると、凸部７は基板２に対して点状
に接触するので、より密着性と離型性が向上する。As shown in FIG. 3, the substrate 2 is formed by arranging a large number of independent convex portions 7 in a row between the rows of the vapor deposition through holes 6.
This is to reduce the contact area with and improve the releasability. Further, as shown in FIGS. 6 and 7, when each convex portion 7 has a tapered shape in which the thickness gradually increases from the peripheral edge toward the center, the convex portion 7 contacts the substrate 2 in a dot shape. Further, the adhesiveness and releasability are improved.
【００１９】図９に示すごとく、前後に長いリブ状の凸
部７を設けてあると、先の図３および図６のような多数
独立の凸部７を備える形態と比べて、マスク本体３の裏
打ち部分が大きくなるので、マスク１はより撓みにくい
形態となり、従って、発光層５の位置精度や再現性に優
れた蒸着マスク１が得られる。As shown in FIG. 9, when the long rib-shaped convex portions 7 are provided in the front and rear, the mask main body 3 is different from the above-described configuration having a large number of independent convex portions 7 as shown in FIGS. Since the lining portion of is large, the mask 1 has a shape that is less likely to bend. Therefore, the vapor deposition mask 1 having excellent positional accuracy and reproducibility of the light emitting layer 5 can be obtained.
【００２０】本発明に係る有機ＥＬ素子用蒸着マスクの
製造方法によれば、電鋳方法により一次電着層１４すな
わち蒸着通孔６を有するマスク本体３を形成したので、
エッチング加工により蒸着通孔６などを形成する形式に
比べて、高精度にしかも生産性を確保してつくれる利点
を有する。レーザー加工する形式に比べて、製造コスト
が安価であることや、熱反応によるうねりが一切生じ
ず、高精度につくれる点でも有利である。According to the method of manufacturing a vapor deposition mask for an organic EL device of the present invention, the mask body 3 having the primary electrodeposition layer 14, that is, the vapor deposition through hole 6 is formed by the electroforming method.
Compared to the method of forming the vapor deposition through holes 6 and the like by etching, it has an advantage that it can be manufactured with high accuracy and with high productivity. It is also advantageous in that the manufacturing cost is lower than that of the laser processing type, and that undulation due to thermal reaction does not occur at all and it can be manufactured with high accuracy.
【００２１】枠４の取り付け作業を、母型に付いた状態
で行うようにしてあると、マスク本体３の位置ズレが生
じにくく、寸法安定性を確保できる利点がある。When the frame 4 is attached to the mother die, the mask body 3 is less likely to be misaligned, and dimensional stability can be ensured.
【００２２】[0022]
【発明の実施の形態】（第１実施例） 図１ないし図３
に、本発明の第１実施例に係る有機ＥＬ素子用蒸着マス
クを示す。図１は、発光層５の蒸着対象であるガラス製
の基板２の下方に、当該マスク１を配置させた状態を示
している。ここで示されるマスク１は、赤色（Ｒ）の発
光層５を形成するためのマスクである。マスク１は、ニ
ッケルやニッケルコバルト等のニッケル合金、その他の
電着金属を素材として、電鋳方法により形成されたマス
ク本体３と、これの周縁に貼り付けられたステンレスや
アルミニウム等の金属製の枠体４（図２）とからなる。
マスク本体３には、発光層５形成用の蒸着通孔６が多数
独立して設けられている。マスク本体３の厚みは、好ま
しくは１０〜１００μｍの範囲とし、本実施例において
は、１０μｍに設定する。なお、図１において、ガラス
基板２と発光層５との間には、透明電極やバッファ層等
が形成されているが、ここでは図示を省略する。DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIGS. 1 to 3
FIG. 3 shows a vapor deposition mask for organic EL devices according to the first embodiment of the present invention. FIG. 1 shows a state in which the mask 1 is arranged below a glass substrate 2 on which the light emitting layer 5 is vapor-deposited. The mask 1 shown here is a mask for forming the red (R) light emitting layer 5. The mask 1 is made of a nickel alloy such as nickel or nickel-cobalt, or other electrodeposited metal, and is formed by an electroforming method. The frame 4 (FIG. 2).
A large number of vapor deposition through holes 6 for forming the light emitting layer 5 are independently provided in the mask body 3. The thickness of the mask body 3 is preferably in the range of 10 to 100 μm, and is set to 10 μm in this embodiment. In FIG. 1, a transparent electrode, a buffer layer and the like are formed between the glass substrate 2 and the light emitting layer 5, but the illustration thereof is omitted here.
【００２３】図３に示すごとく、蒸着通孔６は、平面視
で前後の長さ寸法が２００μｍ、左右幅寸法が３０〜８
０μｍの四角形状を有している。蒸着通孔６は、前後方
向に直線的に並ぶ複数個の通孔群を列とし、複数個の列
が左右方向に並列状に配設されたマトリクス状に形成さ
れている。互いに隣接する蒸着通孔６の列の間には、図
３において仮想線で示すように、緑（Ｇ）と青（Ｂ）の
二つの発光層が形成される。このため、左右方向におけ
る隣接する蒸着通孔６の開口間隔は、これら二色の発光
層の形成領域ぶんだけ大きく設定されている。図１に示
すように、各蒸着通孔６の内周面は、ストレート状であ
る。As shown in FIG. 3, the vapor deposition through hole 6 has a front-rear length dimension of 200 μm and a left-right width dimension of 30 to 8 in plan view.
It has a square shape of 0 μm. The vapor deposition through-holes 6 are formed in a matrix in which a plurality of through-hole groups linearly arranged in the front-rear direction are arranged in rows, and the plurality of rows are arranged in parallel in the left-right direction. Two light emitting layers of green (G) and blue (B) are formed between the rows of the vapor deposition through holes 6 adjacent to each other, as indicated by a virtual line in FIG. Therefore, the opening interval between the adjacent vapor deposition through holes 6 in the left-right direction is set to be as large as the formation region of these two-color light emitting layers. As shown in FIG. 1, the inner peripheral surface of each vapor deposition through hole 6 is straight.
【００２４】図１に示すように、マスク１の上面側、す
なわち基板２との対向面側には、基板２に対する離型性
向上用の凸部７が、上方向に突出状に設けられている。
図３に示すように、各凸部７は、平面視で左右に長い四
角形状を呈しており、前後方向に並ぶ蒸着通孔６の間に
配設されている。本実施例では、凸部７の前後の幅寸法
は、１０μｍ、左右幅寸法は１００μｍと設定してあ
る。図１に示すように、各凸部７は、好ましくは縦断側
面視で端部の厚みが薄く、中央部が厚い蒲鉾形状であ
り、中央部が線接触状にガラス基板２と接触する。As shown in FIG. 1, on the upper surface side of the mask 1, that is, on the side facing the substrate 2, a convex portion 7 for improving releasability from the substrate 2 is provided in a protruding shape in an upward direction. There is.
As shown in FIG. 3, each convex portion 7 has a rectangular shape that is long in the left and right in a plan view, and is arranged between the vapor deposition through holes 6 arranged in the front-rear direction. In this embodiment, the front and rear width dimensions of the convex portion 7 are set to 10 μm, and the left and right width dimensions thereof are set to 100 μm. As shown in FIG. 1, each convex portion 7 is preferably a semi-cylindrical shape with a thin end portion and a thick central portion when viewed in a longitudinal side view, and the central portion contacts the glass substrate 2 in a line contact manner.
【００２５】凸部７の突出寸法ｈ、すなわち凸部７の中
央部における厚み寸法は、１〜１０μｍとする。凸部７
の突出寸法ｈが１μｍ未満であると、離型性の向上効果
が得られにくい。突出寸法ｈが１０μｍを超えると、マ
スク１の裏面に蒸着物質が回り込んで、蒸着領域と非蒸
着領域との境界に滲みが生じやすく、発光層５の周縁の
形状が不均一となり易い。The protruding dimension h of the convex portion 7, that is, the thickness dimension of the central portion of the convex portion 7 is set to 1 to 10 μm. Convex part 7
If the protrusion dimension h of is less than 1 μm, it is difficult to obtain the effect of improving the releasability. When the protrusion dimension h exceeds 10 μm, the vapor deposition substance wraps around the back surface of the mask 1 and bleeding easily occurs at the boundary between the vapor deposition region and the non-vapor deposition region, and the peripheral shape of the light emitting layer 5 tends to be nonuniform.
【００２６】図４および図５は本実施例に係る有機ＥＬ
素子用電着マスクの製造方法を示す。まず、図４（ａ）
に示すごとく、導電性を有する例えばステンレスや真ち
ゅう鋼製の母型１０の表面にフォトレジスト層１１を形
成する。このフォトレジスト層１１は、ネガタイプの感
光性ドライフィルムレジストを、所定の高さに合わせて
一枚ないし数枚ラミネートして熱圧着により形成した。4 and 5 show the organic EL device according to this embodiment.
The manufacturing method of the electrodeposition mask for elements is shown. First, FIG. 4 (a)
As shown in FIG. 3, a photoresist layer 11 is formed on the surface of a mother mold 10 made of, for example, stainless steel or brass steel having conductivity. The photoresist layer 11 was formed by thermocompression bonding by laminating one or several negative type photosensitive dry film resists at a predetermined height.
【００２７】次いで、図４（ｂ）に示すごとくフォトレ
ジスト層１１の上に、前記蒸着通孔６に対応する透光孔
１２ａを有するパターンフィルム１２（ガラスマスク）
を密着させたのち、紫外光ランプで紫外線光を照射して
露光を行い、現像、乾燥の各処理を行って、未露光部分
を溶解除去することにより、図４（ｃ）に示すごとく、
前記蒸着通孔６に対応するストレート状のレジスト体１
３ａを有する一次パターンレジスト１３を母型１０上に
形成した。Next, as shown in FIG. 4B, a pattern film 12 (glass mask) having a light transmitting hole 12a corresponding to the vapor deposition through hole 6 on the photoresist layer 11.
After adhering to each other, exposure is performed by irradiating with ultraviolet light from an ultraviolet lamp, and each process of development and drying is performed to dissolve and remove the unexposed portion, as shown in FIG. 4 (c).
A straight resist body 1 corresponding to the vapor deposition through hole 6
A primary pattern resist 13 having 3a was formed on the master 10.
【００２８】続いて、上記母型１０を所定の条件に建浴
した電鋳槽に入れ、図４（ｄ）に示すごとく先のレジス
ト体１３ａの高さの範囲内で、母型１０のレジスト体１
３ａで覆われていない表面にニッケルやニッケル合金等
の電着金属を好ましくは１０〜１００μｍ厚の範囲、本
実施例では５０μｍ厚で一次電鋳して、一次電着層１
４、すなわち前記マスク本体３となる層を形成した。次
に、一次電着層１４の表面を研磨して平滑化した後、図
５（ａ）に示すごとく、感光性のレジスト等を用いて、
レジスト体１８ａを有する二次パターンレジスト１８を
一次電着層１４上に形成した。ここでは、３〜５μｍ厚
の範囲となるように、レジスト体１８ａを形成した。二
次パターンレジスト１８は、凸部７に対応する四角形状
の開口１８ｂを有する。レジスト体１８ａの一部は、一
次電着層１４上に被さっている。Subsequently, the mother die 10 is placed in an electroforming tank prepared under a predetermined condition, and the resist of the mother die 10 is set within the height range of the resist body 13a as shown in FIG. 4 (d). Body 1
The electrodeposited metal such as nickel or nickel alloy is preferably electroplated on the surface not covered with 3a in a thickness range of 10 to 100 μm, in this embodiment 50 μm, to form a primary electrodeposited layer 1
4, that is, a layer to be the mask body 3 was formed. Next, after the surface of the primary electrodeposition layer 14 is polished and smoothed, a photosensitive resist or the like is used as shown in FIG.
The secondary pattern resist 18 having the resist body 18 a was formed on the primary electrodeposition layer 14. Here, the resist body 18a was formed to have a thickness of 3 to 5 μm. The secondary pattern resist 18 has a rectangular opening 18 b corresponding to the convex portion 7. Part of the resist body 18 a covers the primary electrodeposition layer 14.
【００２９】次に図５（ｂ）に示すごとく、一次電着層
１４の二次パターンレジスト１８で覆われていない開口
１８ｂの表面に、ニッケルやニッケル合金等の電着金属
を好ましくは、１〜１０μｍ厚の範囲、本実施例では３
μｍ厚で電鋳し、二次電着層１９すなわち凸部７となる
層を形成した。かくして、一次電着層１４上に二次電着
層１９が一体不可分的に形成されたマスク本体３を得
た。最後に、一次および二次パターンレジスト１３・１
８を溶解除去してから、マスク本体３の周縁に、アルミ
やステンレス製などからなる枠体４を取り付け、母型１
０から一次および二次電着層１４・１９を剥離すること
により、図５（ｃ）に示すように、多数の蒸着通孔６を
有するマスク本体３の上面側に多数独立の凸部７を備え
る有機ＥＬ素子用蒸着マスク１を得た。図５（ｂ）に示
す二次電鋳工程においては、電鋳槽にブチンジオールな
どの第２種光沢剤を建浴して、光沢メッキを行った。こ
れにて、図１に示すごとく、縦断側面視で前後端部の厚
みが薄く、中央部が厚い蒲鉾形状の凸部７が得られた。Next, as shown in FIG. 5B, an electrodeposited metal such as nickel or nickel alloy is preferably formed on the surface of the opening 18b of the primary electrodeposited layer 14 which is not covered with the secondary pattern resist 18, preferably 1 10 μm thick range, 3 in this example
By electroforming with a thickness of μm, a secondary electrodeposition layer 19, that is, a layer to be the convex portion 7 was formed. Thus, the mask main body 3 in which the secondary electrodeposition layer 19 was integrally and inseparably formed on the primary electrodeposition layer 14 was obtained. Finally, the primary and secondary pattern resist 13.1
After dissolving and removing 8, the frame body 4 made of aluminum or stainless steel is attached to the peripheral edge of the mask body 3 to form the mother die 1.
By peeling the primary and secondary electrodeposition layers 14 and 19 from 0, as shown in FIG. 5C, a large number of independent convex portions 7 are formed on the upper surface side of the mask main body 3 having a large number of vapor deposition through holes 6. A vapor deposition mask 1 for an organic EL device provided was obtained. In the secondary electroforming step shown in FIG. 5 (b), a second type brightening agent such as butynediol was applied to the electroforming tank to perform bright plating. As a result, as shown in FIG. 1, a kamaboko-shaped convex portion 7 having thin front and rear end portions and a thick central portion was obtained in a longitudinal side view.
【００３０】以上のように本実施例に係る有機ＥＬ素子
用蒸着マスク１では、マスク本体３の上面側に多数独立
の凸部７を設けたので、基板２に発光層５を形成する蒸
着工程においては、これら凸部７の上端のみが基板２に
接触するような姿勢で作業を進めることができる。つま
り、マスク本体３が、基板２から僅かに浮いた姿勢で蒸
着作業を進めることができる。従って、当該作業終了後
は各蒸着通孔６の周縁エッジが発光層５に干渉すること
なく、蒸着マスク１をガラス基板２から離間させること
が可能で、マスク本体３を基板２と密着させた場合に不
可避の発光層５の欠けを効果的に防いで、均一な形状を
有する発光層５を高精度に再現性良く形成できる。ま
た、実質的にマスク１をマスク本体３と凸部７との二層
構造としたので、マスク１の全体強度が増す点でも有利
である。As described above, in the vapor deposition mask 1 for an organic EL element according to this embodiment, since a large number of independent convex portions 7 are provided on the upper surface side of the mask body 3, the vapor deposition step of forming the light emitting layer 5 on the substrate 2 is performed. In the above, the work can be carried out in such a posture that only the upper ends of the convex portions 7 come into contact with the substrate 2. That is, the vapor deposition work can be performed with the mask body 3 slightly floating from the substrate 2. Therefore, after the work is completed, the vapor deposition mask 1 can be separated from the glass substrate 2 without the peripheral edge of each vapor deposition through hole 6 interfering with the light emitting layer 5, and the mask body 3 is brought into close contact with the substrate 2. In this case, it is possible to effectively prevent the unavoidable chipping of the light emitting layer 5 and form the light emitting layer 5 having a uniform shape with high accuracy and good reproducibility. Further, since the mask 1 is substantially of a two-layer structure of the mask body 3 and the convex portion 7, it is also advantageous in that the overall strength of the mask 1 is increased.
【００３１】凸部７が、前後端部の厚みが薄く、中央部
に向かって漸次厚みが増すような、縦断面視で蒲鉾形状
としてあると、中央部のみが基板２と線状に接触するた
め、図１に示すごとく、凸部７の上端の全面が基板２と
接触する形態と比べて密着性及び離型性に優れる。ま
た、凸部７を蒸着通孔６の近くに形成した場合には、当
該凸部７自身が発光層５に接触して、発光層５の周縁が
こそぎ取られるおそれがあるが、凸部７の前後端部の厚
みを薄くしてあると、発光層５との接触確率を低く抑え
て、この点でも発光層５が欠けるのを効果的に阻止でき
る。If the convex portion 7 has a semi-cylindrical shape in a longitudinal sectional view such that the front and rear end portions are thin and the thickness gradually increases toward the central portion, only the central portion linearly contacts the substrate 2. Therefore, as shown in FIG. 1, the adhesiveness and releasability are excellent as compared with the configuration in which the entire upper surface of the convex portion 7 contacts the substrate 2. Further, when the convex portion 7 is formed near the vapor deposition through hole 6, the convex portion 7 itself may contact the light emitting layer 5 and the peripheral edge of the light emitting layer 5 may be scraped off. If the thickness of the front and rear end portions of 7 is thin, the probability of contact with the light emitting layer 5 can be suppressed to be low, and in this respect also, chipping of the light emitting layer 5 can be effectively prevented.
【００３２】凸部７の突出寸法ｈを、１〜１０μｍと低
く設定してあるので、マスク１の裏面に蒸着物質が回り
込んで、蒸着領域と非蒸着領域との境界に滲みが生じ
て、形状が不均一となる不具合が少ない。従って、この
点でも素子の高精度化に寄与できる。Since the protruding dimension h of the convex portion 7 is set to a low value of 1 to 10 μm, the vapor deposition substance wraps around the back surface of the mask 1 to cause bleeding at the boundary between the vapor deposition region and the non-vapor deposition region, There are few problems that the shape is not uniform. Therefore, also in this respect, it is possible to contribute to the high precision of the element.
【００３３】蒸着通孔６は、図３に示すごとく前後方向
に直線的に並べるほかに、図１６に示すように斜め方向
に並べることができる。この図１６に示す形態において
は、凸部７の左右方向の長さ寸法は、二つの蒸着通孔６
の左右方向に係る開口幅寸法よりも僅かに大きく設定し
てある。それ以外の構成、および作用効果は、図１ない
し図３と同様であるので、ここでは説明を省略する。The vapor deposition through-holes 6 can be arranged linearly in the front-rear direction as shown in FIG. 3 or can be arranged obliquely as shown in FIG. In the embodiment shown in FIG. 16, the length of the convex portion 7 in the left-right direction is determined by the two vapor deposition through holes 6
It is set to be slightly larger than the opening width dimension in the left-right direction. The other configurations and effects are the same as those in FIGS. 1 to 3, and therefore description thereof will be omitted here.
【００３４】（第２実施例） 図６および図７に、本発
明の第２実施例に係る有機ＥＬ素子用蒸着マスクを示
す。この実施例に係るマスク１では、多数独立の凸部７
が、マスク本体３の上面に上方向に突出状に形成されて
おり、各凸部７が平面視で円形状を有している点が、先
の第１実施例と相違する。図７に示すように、各凸部７
は、周縁から中央に行くに従って漸次厚みが増す先窄ま
りのテーパー状を呈しており、上端部が基板２（図１参
照）と点状に接触する。(Second Embodiment) FIGS. 6 and 7 show a vapor deposition mask for an organic EL device according to a second embodiment of the present invention. In the mask 1 according to this embodiment, a large number of independent convex portions 7
However, this is different from the first embodiment in that it is formed on the upper surface of the mask main body 3 so as to project upward, and each convex portion 7 has a circular shape in a plan view. As shown in FIG. 7, each convex portion 7
Has a tapered shape in which the thickness gradually increases from the peripheral edge toward the center, and the upper end thereof makes point contact with the substrate 2 (see FIG. 1).
【００３５】第２実施例に係る有機ＥＬ素子用蒸着マス
クの製造方法を図４および図８を使って説明する。ま
ず、図４（ａ）に示すごとく、導電性を有するステンレ
スや真ちゅう鋼製の母型１０の表面にフォトレジスト層
１１を形成した。次に、図４（ｂ）に示すごとく、フォ
トレジスト層１１の上に、蒸着通孔６に対応する透光孔
１２ａを持つパターンフィルム１２（ガラスマスク）を
密着させたのち、紫外線ランプで紫外線を照射して露光
を行い、現像・乾燥の各処理を行って、未露光部分を溶
解除去することにより、図４（ｃ）に示すごとく、蒸着
通孔６に対応するストレート状のレジスト体１３ａを有
する一次パターンレジスト１３を母型１０上に形成し
た。続いて、図４（ｄ）に示すごとく、先のレジスト体
１３ａの高さの範囲内で、母型１０のレジスト体１３ａ
で覆われていない表面にニッケル合金等の電着金属を好
ましくは５〜１００μｍ厚の範囲で、本実施例では１０
μｍ厚で一次電鋳して、一次電着層１４すなわちマスク
本体３となる層を形成した。以上の工程は第１実施例と
同様である。A method of manufacturing a vapor deposition mask for an organic EL device according to the second embodiment will be described with reference to FIGS. First, as shown in FIG. 4A, a photoresist layer 11 was formed on the surface of a master mold 10 made of conductive stainless steel or brass steel. Next, as shown in FIG. 4 (b), a pattern film 12 (glass mask) having a light transmitting hole 12a corresponding to the vapor deposition through hole 6 is adhered on the photoresist layer 11, and then an ultraviolet light is emitted from an ultraviolet lamp. Is exposed to light to perform exposure / development / drying, and the unexposed portion is dissolved and removed. As shown in FIG. 4C, the straight resist body 13a corresponding to the vapor deposition through hole 6 is formed. A primary pattern resist 13 having the above was formed on the matrix 10. Then, as shown in FIG. 4D, the resist body 13a of the mother die 10 is formed within the height range of the resist body 13a.
An electrodeposited metal, such as a nickel alloy, is preferably coated on the surface not covered with the electrode with a thickness of 5 to 100 μm, and in the present embodiment, 10
Primary electroforming was performed to a thickness of μm to form a primary electrodeposition layer 14, that is, a layer to be the mask body 3. The above steps are the same as in the first embodiment.
【００３６】次に、一次電着層１４の表面研磨後、図８
（ａ）に示すごとく、感光性の液状レジスト等を用い
て、レジスト体１８ａを有する二次パターンレジスト１
８を一次電着層１４上に薄く形成した。ここでは、１〜
２μｍ厚の範囲となるように、レジスト体１８ａを形成
した。レジスト体１８ａで覆われていない部分は、凸部
７（図６参照）に対応する円形状の開口１８ｂとなって
いる。Next, after polishing the surface of the primary electrodeposition layer 14, FIG.
As shown in (a), a secondary pattern resist 1 having a resist body 18a is formed by using a photosensitive liquid resist or the like.
8 was thinly formed on the primary electrodeposition layer 14. Here, 1
The resist body 18a was formed to have a thickness of 2 μm. The portion not covered with the resist body 18a is a circular opening 18b corresponding to the convex portion 7 (see FIG. 6).
【００３７】次に、図８（ｂ）に示すごとく一次電着層
１４の二次パターンレジスト１８で覆われていない開口
１８ｂの表面に、光沢剤を多く含有するニッケル−コバ
ルト等の電着金属を電鋳して、二次電着層１９、すなわ
ち凸部７を形成した。ここでは、レジスト体１８ａの高
さを超えて電着金属を電鋳させて、凸部７がレジスト体
１８ａの縁部に被さるようにオーバーハングさせた。具
体的には、３〜５μｍ厚の範囲で、本実施例では４μｍ
厚で電鋳して、凸部７を形成した。Next, as shown in FIG. 8B, on the surface of the opening 18b of the primary electrodeposition layer 14 which is not covered with the secondary pattern resist 18, an electrodeposited metal such as nickel-cobalt containing a large amount of a brightening agent. Was electroformed to form the secondary electrodeposition layer 19, that is, the convex portion 7. Here, the electrodeposited metal was electroformed so as to exceed the height of the resist body 18a, and was overhanged so that the convex portion 7 covered the edge portion of the resist body 18a. Specifically, in the range of 3 to 5 μm, 4 μm in this embodiment.
The projection 7 was formed by thick electroforming.
【００３８】最後に、一次及び二次パターンレジスト１
３・１８を溶解除去してから、マスク本体３の周縁に枠
体４（図２参照）を取り付け、母型１０から一次および
二次電着層１４・１９を剥離することにより、図８
（ｃ）に示すごとく、マスク本体３に凸部７を多数備え
る有機ＥＬ素子用蒸着マスク１を得た。Finally, the primary and secondary pattern resist 1
After melting and removing 3.18, the frame body 4 (see FIG. 2) is attached to the peripheral edge of the mask main body 3 and the primary and secondary electrodeposition layers 14 and 19 are peeled off from the mother die 10.
As shown in (c), a vapor deposition mask 1 for an organic EL device having a large number of convex portions 7 on the mask body 3 was obtained.
【００３９】以上のようにして得られた有機ＥＬ素子用
蒸着マスク１の凸部７は、図６および図７のように、平
面視で円形状、縦断側面視で先窄まりのテーパー状とな
る。凸部７は、前後方向に隣り合う蒸着通孔６の間に位
置し、マスク本体３から上方向に突出状に多数独立して
設けられる。二次パターンレジスト１８を溶解除去する
ことにより、凸部７とマスク本体３との接合部分には、
微細な凹入部２５が形成される。As shown in FIGS. 6 and 7, the convex portion 7 of the vapor deposition mask 1 for an organic EL element obtained as described above has a circular shape in a plan view and a tapered shape with a tapered end in a longitudinal side view. Become. The convex portions 7 are located between the vapor deposition through holes 6 that are adjacent to each other in the front-rear direction, and are provided independently from each other so as to project upward from the mask body 3. By dissolving and removing the secondary pattern resist 18, the joint portion between the convex portion 7 and the mask body 3 is
A fine recess 25 is formed.
【００４０】本実施例に係るマスク１によれば、マスク
本体３の上面側に多数独立の凸部７を設けたので、基板
２に発光層５を形成する蒸着工程においては、これら凸
部７の上端のみが基板２に点接触するような姿勢で作業
を進めることができる。従って、当該作業終了後は各蒸
着通孔６の周縁エッジが、発光層５に干渉することなく
蒸着マスク１をガラス基板２から離間させることが可能
で、マスク本体３を基板２と密着させた場合に不可避の
発光層５の欠けを効果的に防いで、均一な形状を有する
発光層５を高精度に再現性良く形成できる。特に、凸部
７を先窄まりのテーパー状として、基板２に対して点状
に接触するようにしてあるので、マスク１が優れた密着
性と離型性を発揮する点で有利となる。According to the mask 1 of this embodiment, since a large number of independent convex portions 7 are provided on the upper surface side of the mask body 3, these convex portions 7 are formed in the vapor deposition process for forming the light emitting layer 5 on the substrate 2. It is possible to proceed with the work in such a posture that only the upper end of the point contact the substrate 2. Therefore, after the completion of the work, the peripheral edge of each vapor deposition through hole 6 can separate the vapor deposition mask 1 from the glass substrate 2 without interfering with the light emitting layer 5, and the mask body 3 is brought into close contact with the substrate 2. In this case, it is possible to effectively prevent the unavoidable chipping of the light emitting layer 5 and form the light emitting layer 5 having a uniform shape with high accuracy and good reproducibility. In particular, since the convex portion 7 has a tapered taper shape and is in point contact with the substrate 2, it is advantageous in that the mask 1 exhibits excellent adhesion and releasability.
【００４１】（第３実施例） 図９および図１０に、本
発明の第３実施例に係る有機ＥＬ素子用蒸着マスクを示
す。本実施例に係るマスク１においては、各凸部７を左
右に長い連続したリブ状としてある点が、先の第１およ
び第２実施例と相違する。各凸部７は、縦断面視で前後
端部の厚みが薄く、中央部に向かって漸次厚みが増す蒲
鉾形状としてあり、中央部が基板２（図１参照）と、線
状に接触するようにしてある。(Third Embodiment) FIGS. 9 and 10 show a vapor deposition mask for an organic EL device according to a third embodiment of the present invention. The mask 1 according to the present embodiment differs from the first and second embodiments described above in that each convex portion 7 has a continuous rib shape that is long in the left and right directions. Each of the protrusions 7 has a semi-cylindrical shape in which the thickness of the front and rear ends is thin and the thickness is gradually increased toward the center in a longitudinal sectional view, and the center is in linear contact with the substrate 2 (see FIG. 1). I am doing it.
【００４２】図１１および図１２は本実施例に係る有機
ＥＬ素子用蒸着マスクの製造方法を示す。まず、図１１
（ａ）に示すごとく、導電性を有するステンレス製の母
型３０の表面に、左右方向に長いレジスト体３１ａを有
するエッチングレジスト３１をストライプ状に形成し
た。次に、図１１（ｂ）に示すごとく、母型３０のレジ
スト体３１ａで覆われていない表面をエッチング処理し
て、左右方向に長い凹溝３２を形成した。ここでは、化
学エッチングを行い、３μｍの深みを有する断面蒲鉾状
の凹溝３２を形成した。11 and 12 show a method of manufacturing a vapor deposition mask for an organic EL device according to this embodiment. First, FIG.
As shown in (a), an etching resist 31 having a resist body 31a that is long in the left-right direction was formed in a stripe shape on the surface of a stainless steel mold 30 having conductivity. Next, as shown in FIG. 11B, the surface of the mother die 30 which was not covered with the resist body 31a was subjected to an etching treatment to form a groove 32 long in the left-right direction. Here, chemical etching was performed to form a concave groove 32 having a semi-cylindrical shape having a depth of 3 μm.
【００４３】次に、図１１（ｃ）に示すごとく、凹溝３
２を埋めるようにレジストを再コートして、母型３０の
表面全体をエッチングレジスト３１で覆ってから、パタ
ーン焼付処理、現像処理、不要なレジストの除去処理を
行って、図１２（ａ）に示すごとく蒸着通孔６に対応す
る多数独立のレジスト体３４ａを有するパターンレジス
ト３４を形成した。続いて、図１２（ｂ）に示すごとく
レジスト体３４ａで覆われていない母型３０の表面に、
ニッケルコバルト等の電着金属を電鋳して、マスク本体
３と凸部７とが一体不可分に形成された電着層３５を得
た。ここでは、マスク本体３に係る電着層３５の厚み
は、３０μｍ厚とした。Next, as shown in FIG. 11 (c), the concave groove 3 is formed.
2 is filled up with a resist to cover the entire surface of the master mold 30 with an etching resist 31, and then a pattern baking process, a developing process, and an unnecessary resist removing process are performed. As shown, a pattern resist 34 having a large number of independent resist bodies 34a corresponding to the vapor deposition through holes 6 was formed. Then, as shown in FIG. 12B, on the surface of the mother die 30 not covered with the resist body 34a,
Electrodeposited metal such as nickel-cobalt was electroformed to obtain an electrodeposited layer 35 in which the mask body 3 and the protrusions 7 were inseparably formed. Here, the thickness of the electrodeposition layer 35 related to the mask body 3 was 30 μm.
【００４４】レジスト体３４ａを溶解除去して、蒸着通
孔６を形成してから、マスク本体３の周縁に枠体４（図
１０参照）を取り付け、最後に母型３０から電着層を剥
離することにより、図１２（ｃ）に示すような左右方向
に長い連続したリブ状の凸部７を有する有機ＥＬ素子用
蒸着マスク１を得た。After the resist body 34a is dissolved and removed to form the vapor deposition through holes 6, the frame body 4 (see FIG. 10) is attached to the peripheral edge of the mask body 3, and finally the electrodeposition layer is peeled off from the mother die 30. By doing so, the vapor deposition mask 1 for an organic EL device having a continuous rib-shaped convex portion 7 long in the left-right direction as shown in FIG. 12C was obtained.
【００４５】本実施に係る有機ＥＬ素子用蒸着マスクに
よれば、マスク本体３の上面側に多数の連続したリブ状
の凸部７を設けたので、基板２に発光層５を形成する蒸
着工程においては、これら凸部７の上端のみが基板２に
接触するような姿勢で作業を進めて、当該作業終了後は
蒸着通孔６の開口エッジが発光層５に干渉することなく
蒸着マスク１をガラス基板２から離間させることができ
る。従って、マスク本体３を基板２と密着させた場合に
不可避の発光層５の欠けを効果的に防いで、均一な形状
を有する発光層５を高精度に再現性良く形成できる。According to the vapor deposition mask for an organic EL device of the present embodiment, since a large number of continuous rib-shaped convex portions 7 are provided on the upper surface side of the mask body 3, the vapor deposition step of forming the light emitting layer 5 on the substrate 2 is performed. In the above, the work is advanced in such a posture that only the upper ends of the convex portions 7 come into contact with the substrate 2, and after the work is finished, the vapor deposition mask 1 is removed without the opening edge of the vapor deposition through hole 6 interfering with the light emitting layer 5. It can be separated from the glass substrate 2. Therefore, it is possible to effectively prevent the inevitable chipping of the light emitting layer 5 when the mask body 3 is brought into close contact with the substrate 2, and to form the light emitting layer 5 having a uniform shape with high accuracy and reproducibility.
【００４６】左右に長い連続したリブ状の凸部７を設け
てあると、マスク本体３の裏打ち部分を大きくして、マ
スク１の自重による撓み変形を効果的に阻止できる。従
って、本実施例に係るマスク１は、発光層５の位置精度
や再現性に優れたものとなる。When the rib-shaped convex portions 7 which are long and continuous to the left and right are provided, the backing portion of the mask main body 3 can be enlarged and the flexural deformation of the mask 1 due to its own weight can be effectively prevented. Therefore, the mask 1 according to this example has excellent positional accuracy and reproducibility of the light emitting layer 5.
【００４７】（第４実施例） 本実施例に係る有機ＥＬ
素子用蒸着マスク１は、図１３に示すごとく基板２側に
設けられた上段層４１と、この上段層４１の下面側、す
なわち気化源４３からの飛来方向に形成された下段層４
２とからなる。蒸着通孔６は、気化源４３からの気化物
の飛来方向に外広がり状に形成された断面段付き形状を
なしている。具体的には、各蒸着通孔６は、上段層４１
に内周面がストレート状に設けられた小孔部４４と、こ
の小孔部４４に連通して該小孔部４４よりも大きな開口
寸法で内周面がストレート状に下段層４２側に設けられ
た大孔部４５とからなる。図１４は、本実施例に係る有
機ＥＬ素子用蒸着マスク１を下方向から見た平面図であ
り、このマスク１では、四角形状の小孔部４４の周縁を
囲むように、下段層４２に四角形状の大孔部４５が凹み
形成されている。(Fourth Embodiment) Organic EL according to the present embodiment
As shown in FIG. 13, the element vapor deposition mask 1 includes an upper layer 41 provided on the substrate 2 side and a lower layer 4 formed on the lower surface side of the upper layer 41, that is, in the direction of flight from the vaporization source 43.
It consists of 2. The vapor deposition through hole 6 has a stepped shape in cross section that is formed in an outwardly spreading shape in the direction in which the vaporized material from the vaporization source 43 flies. Specifically, each vapor deposition through hole 6 has an upper layer 41.
A small hole portion 44 having a straight inner peripheral surface, and a straight inner hole surface communicating with the small hole portion 44 and having a larger opening size than the small hole portion 44 on the lower layer 42 side. And a large hole portion 45 formed therein. FIG. 14 is a plan view of the organic EL device vapor deposition mask 1 according to the present embodiment as seen from below. In this mask 1, the lower layer 42 is formed so as to surround the periphery of the rectangular small hole portion 44. A rectangular large hole portion 45 is formed in a recess.
【００４８】図２１に示すごとく、マスク本体３の板厚
が厚いと、蒸着通孔６の開口上端縁６ａによる影ができ
て、得られた発光層５は歪な形状となる。この点、図１
３に示すごとく、マスク本体３を下段層４２と上段層４
１の２層構造として、蒸着通孔６を上段層４１側の小孔
部４４と下段層４２側の大孔部４５からなる下広がり状
の断面段付き形状としてあると、広い角度から気化源４
３からの気化物を受け入れることが可能となる。従っ
て、先の開口上端縁による影をなくして、均一な高さ寸
法を有する断面形状の発光層５が得られる利点がある。
また、下段層４２の存在による補強効果で蒸着マスク１
自体の変形、撓み性等をより一層防止できる。かくし
て、離型性向上用の凸部７を設けたことと相まって、発
光層５を高精度に再現性良く形成することが可能とな
る。As shown in FIG. 21, when the plate thickness of the mask body 3 is thick, a shadow is formed by the opening upper edge 6a of the vapor deposition through hole 6, and the obtained light emitting layer 5 has a distorted shape. This point, Figure 1
As shown in FIG. 3, the mask body 3 is provided with a lower layer 42 and an upper layer 4
In the two-layer structure of No. 1, when the vapor deposition through-hole 6 has a downward widening cross-sectional stepped shape including a small hole portion 44 on the upper layer 41 side and a large hole portion 45 on the lower layer 42 side, the vaporization source from a wide angle. Four
It is possible to receive the vaporized substance from No. 3. Therefore, there is an advantage that the light emitting layer 5 having a uniform cross-sectional shape can be obtained by eliminating the shadow due to the upper edge of the opening.
In addition, the vapor deposition mask 1 has a reinforcing effect due to the presence of the lower layer 42.
It is possible to further prevent deformation and flexibility of itself. Thus, it becomes possible to form the light emitting layer 5 with high accuracy and reproducibility together with the provision of the convex portion 7 for improving the releasability.
【００４９】図１５（ａ）に示すように、下段層４２を
蒸着通孔６の左右両端に沿ってライン状に長く形成し
て、これら下段層４２・４２に囲まれた凹み部分を、小
孔部４４に通じる大孔部４５とすることができる。ま
た、図１５（ｂ）に示すように、下段層４２を分断列状
としてもよい。これらの形態によっても、先の図１３お
よび図１４に示したマスク１と同様の作用効果を得るこ
とができる。As shown in FIG. 15 (a), the lower layer 42 is formed linearly along the left and right ends of the vapor deposition through hole 6, and the recessed portion surrounded by these lower layers 42, 42 is made small. It can be a large hole 45 communicating with the hole 44. Further, as shown in FIG. 15B, the lower layer 42 may be in a divided row. With these configurations, the same operational effects as those of the mask 1 shown in FIGS. 13 and 14 can be obtained.
【００５０】上記実施例以外に、本発明に係る有機ＥＬ
素子用蒸着マスク１は、図１７および図１８に示すよう
な形態とすることができる。まず、図１７（ａ）では、
蒸着通孔６を前後に長い直線状としてあり、そのうえ
で、該蒸着通孔６の左右縁に沿って、前後に長い分断列
状の凸部７を配列してある。図１７（ｂ）に示すよう
に、凸部７を前後に長い列状としてもよい。図１７
（ｃ）に示すように、前後に長い直線状の蒸着通孔６の
左右縁に沿って、平面視で円形状の凸部７を等間隔に配
置してもよい。In addition to the above examples, the organic EL device according to the present invention
The element vapor deposition mask 1 can be configured as shown in FIGS. 17 and 18. First, in FIG. 17 (a),
The vapor deposition through-holes 6 are formed in a straight line that is long in the front-rear direction, and further, along the left and right edges of the vapor-deposition through-holes 6, the long and divided convex portions 7 are arranged in the front-rear direction. As shown in FIG. 17 (b), the convex portions 7 may be arranged in a long line in the front and rear direction. FIG. 17
As shown in (c), the convex portions 7 having a circular shape in plan view may be arranged at equal intervals along the left and right edges of the linear vapor deposition through hole 6 which is long in the front-rear direction.
【００５１】図１８（ａ）〜（ｃ）に示すごとく、Ｒ、
Ｇ、Ｂの三色の発光層のマスク１は、全く異なる形態で
あってもよい。つまり、図１８（ａ）・（ｂ）示すＲ用
とＧ用のマスクでは、凸部７は蒸着通孔６の左右の一端
側に沿う前後方向に長い列状である。これに対して、図
１８（ｃ）に示すＢ用のマスクでは、凸部７は左右方向
に長い列状である。As shown in FIGS. 18A to 18C, R,
The masks 1 for the three-color light emitting layers of G and B may have completely different forms. That is, in the R and G masks shown in FIGS. 18A and 18B, the protrusions 7 are in the form of long rows in the front-rear direction along the left and right one end sides of the vapor deposition through holes 6. On the other hand, in the B mask shown in FIG. 18C, the protrusions 7 are arranged in rows that are long in the left-right direction.
【００５２】上記の各実施例においては、凸部７は蒲鉾
形状や先窄まりのテーパー状としていたが、図１９に示
すごとく、上端面が平坦な断面四角形状であってもよ
い。In each of the above-mentioned embodiments, the convex portion 7 has a semi-cylindrical shape or a tapered tapered shape, but as shown in FIG. 19, the upper end surface may have a flat rectangular cross section.
【図１】本発明の第１実施例に係る有機ＥＬ素子用蒸着
マスクの縦断側面図FIG. 1 is a vertical sectional side view of a vapor deposition mask for an organic EL device according to a first embodiment of the present invention.
【図２】本発明の第１実施例に係る有機ＥＬ素子用蒸着
マスクの一部拡大斜視図FIG. 2 is a partially enlarged perspective view of a vapor deposition mask for an organic EL device according to a first embodiment of the present invention.
【図３】本発明の第１実施例に係る有機ＥＬ素子用蒸着
マスクの平面図FIG. 3 is a plan view of a vapor deposition mask for an organic EL device according to the first embodiment of the present invention.
【図４】本発明の第１実施例に係る有機ＥＬ素子用蒸着
マスクの製造過程の工程説明図FIG. 4 is a process explanatory view of the manufacturing process of the vapor deposition mask for the organic EL device according to the first embodiment of the present invention.
【図５】本発明の第１実施例に係る有機ＥＬ素子用蒸着
マスクの製造過程の工程説明図FIG. 5 is a process explanatory view of the manufacturing process of the vapor deposition mask for the organic EL device according to the first embodiment of the present invention.
【図６】本発明の第２実施例に係る有機ＥＬ素子用蒸着
マスクの平面図FIG. 6 is a plan view of a vapor deposition mask for an organic EL device according to a second embodiment of the present invention.
【図７】本発明の第２実施例に係る有機ＥＬ素子用蒸着
マスクの縦断側面図FIG. 7 is a vertical sectional side view of a vapor deposition mask for an organic EL device according to a second embodiment of the present invention.
【図８】本発明の第２実施例に係る有機ＥＬ素子用蒸着
マスクの製造過程の工程説明図FIG. 8 is a process explanatory view of the manufacturing process of the vapor deposition mask for the organic EL device according to the second embodiment of the present invention.
【図９】本発明の第３実施例に係る有機ＥＬ素子用蒸着
マスクの平面図FIG. 9 is a plan view of a vapor deposition mask for an organic EL device according to a third embodiment of the present invention.
【図１０】本発明の第２実施例に係る有機ＥＬ素子用蒸
着マスクの一部拡大斜視図FIG. 10 is a partially enlarged perspective view of a vapor deposition mask for an organic EL device according to a second embodiment of the present invention.
【図１１】本発明の第３実施例に係る有機ＥＬ素子用蒸
着マスクの製造過程の工程説明図FIG. 11 is a process explanatory view of the manufacturing process of the vapor deposition mask for the organic EL device according to the third embodiment of the present invention.
【図１２】本発明の第３実施例に係る有機ＥＬ素子用蒸
着マスクの製造過程の工程説明図FIG. 12 is a process explanatory view of the manufacturing process of the vapor deposition mask for the organic EL device according to the third embodiment of the present invention.
【図１３】本発明の第４実施例に係る有機ＥＬ素子用蒸
着マスクを示す縦断面図FIG. 13 is a vertical sectional view showing a vapor deposition mask for an organic EL device according to a fourth embodiment of the invention.
【図１４】本発明の第４実施例に係る有機ＥＬ素子用蒸
着マスクを下方向から見た平面図FIG. 14 is a plan view of a vapor deposition mask for an organic EL device according to a fourth embodiment of the present invention viewed from below.
【図１５】（ａ）・（ｂ）は、第４実施例に係る有機Ｅ
Ｌ素子用蒸着マスクの別実施例形態を示す図であり、該
マスクを下方向から見た平面図である。15 (a) and 15 (b) are organic E according to a fourth embodiment.
It is a figure which shows another embodiment of the vapor deposition mask for L elements, and is the top view which looked at this mask from the downward direction.
【図１６】本発明に係る有機ＥＬ素子用蒸着マスクの別
実施形態を示す平面図FIG. 16 is a plan view showing another embodiment of the vapor deposition mask for an organic EL device according to the present invention.
【図１７】（ａ）・（ｂ）・（ｃ）は、本発明に係る有
機ＥＬ素子用蒸着マスクの別実施形態を示す平面図17 (a), (b) and (c) are plan views showing another embodiment of the vapor deposition mask for an organic EL device according to the present invention.
【図１８】（ａ）・（ｂ）は、本発明に係る有機ＥＬ素
子用蒸着マスクの別実施形態を示す平面図18 (a) and (b) are plan views showing another embodiment of the vapor deposition mask for an organic EL device according to the present invention.
【図１９】本発明に係る有機ＥＬ素子用蒸着マスクの別
実施形態を示す縦断面図FIG. 19 is a vertical sectional view showing another embodiment of the vapor deposition mask for an organic EL device according to the present invention.
【図２０】従来例の有機ＥＬ素子用蒸着マスクを示す縦
断面図FIG. 20 is a vertical sectional view showing a vapor deposition mask for an organic EL element of a conventional example.
【図２１】従来の有機ＥＬ素子用蒸着マスクの問題点を
説明するための図FIG. 21 is a view for explaining the problems of the conventional vapor deposition mask for organic EL elements.
１ マスク ２ 基板 ３ マスク本体 ４ 枠体 ５ 発光層 ６ 蒸着通孔 ７ 凸部 １０ 母型 １３ 一次パターンレジスト １３ａ レジスト体 １４ 一次電着層 １８ 二次パターンレジスト １８ｂ 開口 １９ 二次電着層 ３０ 母型 ３１ エッチングレジスト ３１ａ レジスト体 ３２ 凹溝 ３４ パターンレジスト ３４ａ レジスト体 ３５ 電着層 1 mask 2 substrates 3 mask body 4 frame 5 Light emitting layer 6 Vapor deposition through holes 7 convex 10 mother type 13 Primary pattern resist 13a resist body 14 Primary electrodeposition layer 18 Secondary pattern resist 18b opening 19 Secondary electrodeposition layer 30 matrix 31 Etching resist 31a Resist body 32 groove 34 pattern resist 34a resist body 35 Electrodeposition layer
Claims (9)
層５形成用の蒸着通孔６が上下貫通状に多数独立して設
けられている有機ＥＬ素子用の蒸着マスクであって、 蒸着マスクの上面側、すなわち発光層５の蒸着対象であ
る基板２との対向面側に、該基板２に対する離型性向上
用の凸部７が、上方向に突出状に設けられていることを
特徴とする有機ＥＬ素子用蒸着マスク。1. A vapor deposition mask for an organic EL device, wherein a large number of vapor deposition through holes 6 for forming a light emitting layer 5 are independently provided in a vertically penetrating manner in a mask body 3 made of an electrodeposited metal. On the upper surface side of the mask, that is, on the surface side of the light emitting layer 5 facing the substrate 2 to be vapor-deposited, the convex portion 7 for improving the releasability of the substrate 2 is provided so as to project upward. A characteristic evaporation mask for organic EL devices.
ｍの範囲にあるように設定してある請求項１記載の有機
ＥＬ素子用蒸着マスク。2. The protruding dimension h of the convex portion 7 is 1 to 10 μm.
The vapor deposition mask for an organic EL device according to claim 1, wherein the vapor deposition mask is set to be in a range of m.
り、 蒸着通孔６の列の間に、多数独立した凸部７を分断列状
に並設してある請求項１又は２記載の有機ＥＬ素子用蒸
着マスク。3. A plurality of vapor deposition through-holes 6 are formed in an array, and a large number of independent convex portions 7 are provided in parallel in a divided row between the rows of vapor deposition through-holes 6. Vapor deposition mask for organic EL device.
うにしてある請求項３記載の有機ＥＬ素子用蒸着マス
ク。4. The vapor deposition mask for an organic EL device according to claim 3, wherein the protrusions 7 are in point contact with the substrate 2.
り、 蒸着通孔６の列の間に、前後に長いリブ状の凸部７を設
けてある請求項１又は２記載の有機ＥＬ素子用蒸着マス
ク。5. The organic EL device according to claim 1, wherein a large number of vapor deposition through holes 6 are formed in an array, and long rib-shaped convex portions 7 are provided in front and back between the rows of the vapor deposition through holes 6. Vapor deposition mask for devices.
２に発光層５を形成するための蒸着通孔６が上下貫通状
に多数独立して設けられている有機ＥＬ素子用の蒸着マ
スクの製造方法であって、 母型１０の表面に、レジスト体１３ａを有する一次パタ
ーンレジスト１３を設ける第１のパターンニング工程
と、 母型１０上に電着金属を電鋳して、一次電着層１４を形
成する第１の電鋳工程と、 レジスト体１３ａの上面に、開口１８ｂを有する二次パ
ターンレジスト１８を設ける第２のパターンニング工程
と、 一次電着層１４上に電着金属を電鋳して、該一次電着層
１４と一体不可分的に、二次電着層１９を形成する第２
の電鋳工程と、 母型３０から一次および二次電着層１４・１９を剥離す
る剥離工程と、 前記剥離工程と前後して、一次および二次パターンレジ
スト１３・１８を除去する工程とを含み、 一次パターンレジスト１３のレジスト体１３ａの除去に
伴い、一次電着層１４には蒸着通孔６が形成され、 二次パターンレジスト１８の開口１８ｂに形成された二
次電着層１９が、基板２に対する離型性向上用の凸部７
となるようにしてあることを特徴とする有機ＥＬ素子用
蒸着マスクの製造方法。6. A vapor deposition mask for an organic EL device, wherein a plurality of vapor deposition through holes 6 for forming a light emitting layer 5 on a substrate 2 are independently provided in a vertically penetrating manner in a mask body 3 made of an electrodeposited metal. A first patterning step of providing a primary pattern resist 13 having a resist body 13a on the surface of the master die 10, and electroforming an electrodeposited metal on the master die 10 to perform the primary electrodeposition. A first electroforming step of forming the layer 14, a second patterning step of providing a secondary pattern resist 18 having an opening 18b on the upper surface of the resist body 13a, and an electrodeposition metal on the primary electrodeposition layer 14. Second by electroforming to form a secondary electrodeposition layer 19 integrally with the primary electrodeposition layer 14
Of the electroforming step, a peeling step of peeling the primary and secondary electrodeposition layers 14 and 19 from the mother die 30, and a step of removing the primary and secondary pattern resists 13 and 18 before and after the peeling step. In addition, with the removal of the resist body 13a of the primary pattern resist 13, the vapor deposition through holes 6 are formed in the primary electrodeposition layer 14, and the secondary electrodeposition layer 19 formed in the opening 18b of the secondary pattern resist 18 is formed. Convex portion 7 for improving releasability from substrate 2
A method for manufacturing a vapor deposition mask for an organic EL device, characterized in that:
の開口１８ｂを設けてあり、 これら開口１８ｂに対応して、多数独立の凸部７が電鋳
形成されるようにしてある請求項６記載の有機ＥＬ素子
用蒸着マスクの製造方法。7. The secondary pattern resist 18 is provided with a plurality of independent openings 18b, and the plurality of independent projections 7 are formed by electroforming in correspondence with these openings 18b. 2. A method for manufacturing a vapor deposition mask for an organic EL device according to claim 1.
２上に発光層５を形成するための蒸着通孔６が上下貫通
状に多数独立して設けられている有機ＥＬ素子用の蒸着
マスクの製造方法であって、 母型３０上に、前後方向に長い列状のレジスト体３１ａ
を有するエッチングレジスト３１を設ける第１のパター
ンニング工程と、 レジスト体３１ａの間隙にかかる母型３０の表面をエッ
チングして、凹溝３２を形成するエッチング工程と、 凹溝３２を埋めるようにエッチングレジストを再コート
してから、多数独立のレジスト体３４ａを有するパター
ンレジスト３４を設ける第２のパターンニング工程と、 レジスト体３４ａを除く、母型３０上に電着金属を電鋳
して、電着層３５を形成する電鋳工程と、 レジスト体３４ａを除去するレジスト除去工程と、 母型３０から電着層３５を剥離する剥離工程とを含み、 レジスト体３４ａの除去に伴い、電着層３５に蒸着通孔
６が形成され、 母型３０の凹溝３２内に電鋳形成された電着層３５の部
分が、基板２に対する離型性向上用の凸部７となるよう
にしてあることを特徴とする有機ＥＬ素子用蒸着マスク
の製造方法。8. A vapor deposition for an organic EL device in which a large number of vapor deposition through holes 6 for forming a light emitting layer 5 on a substrate 2 are independently provided in a vertically penetrating manner in a mask body 3 made of an electrodeposited metal. A method of manufacturing a mask, comprising: a resist body 31a in a row extending in the front-rear direction on a mother die 30.
A first patterning step of providing an etching resist 31 having a groove, an etching step of forming a groove 32 by etching the surface of the mother die 30 in the gap of the resist body 31a, and an etching step of filling the groove 32. After the resist is recoated, a second patterning step of providing a pattern resist 34 having a large number of independent resist bodies 34a, and electroforming of an electrodeposited metal on the mother die 30 excluding the resist body 34a, The method includes an electroforming step of forming the electrodeposition layer 35, a resist removal step of removing the resist body 34a, and a peeling step of peeling the electrodeposition layer 35 from the mother die 30. The vapor deposition through-hole 6 is formed in 35, and the portion of the electrodeposition layer 35 electroformed in the concave groove 32 of the master die 30 becomes the convex portion 7 for improving the releasability of the substrate 2. A method for manufacturing a vapor deposition mask for an organic EL device, wherein
を貼り付ける枠貼り付け工程を含み、 枠貼り付け工程を、剥離工程に先立って行うようにして
ある請求項６又は７又は８記載の有機ＥＬ素子用蒸着マ
スクの製造方法。9. A frame 4 made of metal is provided around the periphery of the mask body 3.
9. The method for manufacturing a vapor deposition mask for an organic EL device according to claim 6, wherein the frame attaching step is performed prior to the peeling step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002127452A JP4046268B2 (en) | 2002-04-26 | 2002-04-26 | Vapor deposition mask for organic EL device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002127452A JP4046268B2 (en) | 2002-04-26 | 2002-04-26 | Vapor deposition mask for organic EL device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003323980A true JP2003323980A (en) | 2003-11-14 |
| JP4046268B2 JP4046268B2 (en) | 2008-02-13 |
Family
ID=29541557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002127452A Expired - Fee Related JP4046268B2 (en) | 2002-04-26 | 2002-04-26 | Vapor deposition mask for organic EL device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4046268B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006009103A1 (en) * | 2004-07-16 | 2006-01-26 | Kabushiki Kaisha Toyota Jidoshokki | Method for manufacturing organic electroluminescence element |
| JP2007005189A (en) * | 2005-06-24 | 2007-01-11 | Tokki Corp | Mask for forming organic film, sealing film forming device, as well as forming method of sealing film |
| KR101076432B1 (en) | 2004-11-11 | 2011-10-25 | 엘지디스플레이 주식회사 | Masking apparatus and method for fabricating organic electro luminescence display device using the same |
| JP2012015163A (en) * | 2010-06-29 | 2012-01-19 | Hitachi High-Technologies Corp | Optical cvd device |
| US10711338B2 (en) | 2017-01-26 | 2020-07-14 | Sharp Kabushiki Kaisha | Vapor deposition mask and manufacturing method for organic EL display device |
| JP2021107584A (en) * | 2019-09-27 | 2021-07-29 | マクセルホールディングス株式会社 | Mask and method for manufacturing the same |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5976559U (en) * | 1982-11-12 | 1984-05-24 | 株式会社日立製作所 | High frequency spatuta mask jig |
| JPH1050478A (en) * | 1996-04-19 | 1998-02-20 | Toray Ind Inc | Organic field emission element and manufacture thereof |
| JP2000192224A (en) * | 1998-12-24 | 2000-07-11 | Rohm Co Ltd | Mask for vapor deposition and selective vapor deposition method |
| JP2000355788A (en) * | 1993-06-03 | 2000-12-26 | Kyushu Hitachi Maxell Ltd | Nickel laminated body and its production |
| JP2001023773A (en) * | 1999-07-08 | 2001-01-26 | Hokuriku Electric Ind Co Ltd | Manufacture of organic el element and device therefor |
| JP2001237072A (en) * | 2000-02-24 | 2001-08-31 | Tohoku Pioneer Corp | Metal mask and manufacturing method of the same |
| JP2002038254A (en) * | 2000-07-24 | 2002-02-06 | Toray Ind Inc | Mask for patterning electro-conductive film |
-
2002
- 2002-04-26 JP JP2002127452A patent/JP4046268B2/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5976559U (en) * | 1982-11-12 | 1984-05-24 | 株式会社日立製作所 | High frequency spatuta mask jig |
| JP2000355788A (en) * | 1993-06-03 | 2000-12-26 | Kyushu Hitachi Maxell Ltd | Nickel laminated body and its production |
| JPH1050478A (en) * | 1996-04-19 | 1998-02-20 | Toray Ind Inc | Organic field emission element and manufacture thereof |
| JP2000192224A (en) * | 1998-12-24 | 2000-07-11 | Rohm Co Ltd | Mask for vapor deposition and selective vapor deposition method |
| JP2001023773A (en) * | 1999-07-08 | 2001-01-26 | Hokuriku Electric Ind Co Ltd | Manufacture of organic el element and device therefor |
| JP2001237072A (en) * | 2000-02-24 | 2001-08-31 | Tohoku Pioneer Corp | Metal mask and manufacturing method of the same |
| JP2002038254A (en) * | 2000-07-24 | 2002-02-06 | Toray Ind Inc | Mask for patterning electro-conductive film |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006009103A1 (en) * | 2004-07-16 | 2006-01-26 | Kabushiki Kaisha Toyota Jidoshokki | Method for manufacturing organic electroluminescence element |
| KR101076432B1 (en) | 2004-11-11 | 2011-10-25 | 엘지디스플레이 주식회사 | Masking apparatus and method for fabricating organic electro luminescence display device using the same |
| JP2007005189A (en) * | 2005-06-24 | 2007-01-11 | Tokki Corp | Mask for forming organic film, sealing film forming device, as well as forming method of sealing film |
| JP2012015163A (en) * | 2010-06-29 | 2012-01-19 | Hitachi High-Technologies Corp | Optical cvd device |
| US10711338B2 (en) | 2017-01-26 | 2020-07-14 | Sharp Kabushiki Kaisha | Vapor deposition mask and manufacturing method for organic EL display device |
| JP2021107584A (en) * | 2019-09-27 | 2021-07-29 | マクセルホールディングス株式会社 | Mask and method for manufacturing the same |
| JP7203887B2 (en) | 2019-09-27 | 2023-01-13 | マクセル株式会社 | Mask and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4046268B2 (en) | 2008-02-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4046269B2 (en) | Vapor deposition mask for organic EL element and method for producing vapor deposition mask for organic EL element | |
| KR102474454B1 (en) | Deposition mask manufacturing method and deposition mask | |
| KR20190089074A (en) | Deposition mask apparatus and method of manufacturing deposition mask apparatus | |
| CN213232465U (en) | Vapor deposition mask, vapor deposition mask device, and intermediate body | |
| JP2006152396A (en) | Method for manufacturing metal mask, mask of artwork master for electroforming and artwork master | |
| JP2004218034A (en) | Method of producing metal mask, and metal mask | |
| KR101126128B1 (en) | Jig-integrated mask and fabricating method the same | |
| JP2015036436A (en) | Method of producing vapor deposition mask and vapor deposition mask | |
| CN114086220B (en) | Manufacturing method of metal mask and electroformed mother board | |
| JP2003323980A (en) | Vapor deposition mask for organic el element and its manufacturing method | |
| CN108374147A (en) | The manufacturing method of mask assembly | |
| TWI825368B (en) | Method of manufacturing metal mask | |
| JP2001237072A (en) | Metal mask and manufacturing method of the same | |
| EP3690078A1 (en) | Vapor deposition mask | |
| JP6599103B2 (en) | Vapor deposition mask and manufacturing method thereof | |
| JP7421617B2 (en) | vapor deposition mask | |
| JP2001237071A (en) | Metal mask and manufacturing method of the same | |
| JP2004214015A (en) | Deposition mask, deposition method, manufacturing method of organic el panel, and organic el display panel | |
| JP3939785B2 (en) | Electroformed thin metal plate and manufacturing method thereof | |
| KR20060001472A (en) | Shadow mask and the method of its fabrication for oled | |
| JP2023106977A (en) | Vapor deposition mask and manufacturing method of the same | |
| KR20030044664A (en) | A shadow mask for a large size OELD and forming method of thereof | |
| TWI833876B (en) | Evaporation cover and its manufacturing method, evaporation cover device and its manufacturing method, intermediates, evaporation method, and organic EL display device manufacturing method | |
| JP2000305283A (en) | Production of transfer plate and transfer plate | |
| KR100923080B1 (en) | Mask for deposition of display and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050425 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20061123 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070713 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070807 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20070813 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071005 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071114 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071116 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101130 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101130 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111130 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111130 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121130 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121130 Year of fee payment: 5 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121130 Year of fee payment: 5 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |