JP2003317948A - Evaporation source and thin film formation device using the same - Google Patents
Evaporation source and thin film formation device using the sameInfo
- Publication number
- JP2003317948A JP2003317948A JP2002121360A JP2002121360A JP2003317948A JP 2003317948 A JP2003317948 A JP 2003317948A JP 2002121360 A JP2002121360 A JP 2002121360A JP 2002121360 A JP2002121360 A JP 2002121360A JP 2003317948 A JP2003317948 A JP 2003317948A
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- Prior art keywords
- evaporation
- evaporation source
- container
- thin film
- source
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば、有機ＬＥ
Ｄ素子の発光層に用いられる有機薄膜を蒸着によって形
成するための薄膜形成装置に関する。TECHNICAL FIELD The present invention relates to an organic LE, for example.
The present invention relates to a thin film forming apparatus for forming an organic thin film used for a light emitting layer of a D element by vapor deposition.
【０００２】[0002]
【従来の技術】近年、フルカラーフラットパネルディス
プレイ用の素子として、有機ＬＥＤ素子が注目されてい
る。有機ＬＥＤ素子は、蛍光性有機化合物を電気的に励
起して発光させる自発光型素子で、高輝度、高視野角、
面発光、薄型で多色発光が可能であり、しかも数Ｖとい
う低電圧の直流印加で発光する全固体素子で、かつ低温
においてもその特性の変化が少ないという特徴を有して
いる。2. Description of the Related Art In recent years, organic LED elements have been receiving attention as elements for full-color flat panel displays. The organic LED element is a self-luminous element that electrically excites a fluorescent organic compound to emit light, and has high brightness, a wide viewing angle,
It is a surface-emitting device, is thin, and is capable of multicolored light emission. Moreover, it is an all-solid-state device that emits light by applying a DC voltage as low as a few volts, and its characteristics are small even at low temperatures.
【０００３】図６は、従来の有機ＬＥＤ素子を作成する
ための薄膜形成装置の概略構成図である。図６に示すよ
うに、この薄膜形成装置１０１にあっては、真空槽１０
２の下部に蒸発源１０３が配設されるとともに、この蒸
発源１０３の上方に成膜対象物である基板１０４が配置
されている。そして、蒸発源１０３から蒸発される有機
材料の蒸気を、マスク１０５を介して基板１０４に蒸着
させることによって所定パターンの有機薄膜を形成する
ようになっている。FIG. 6 is a schematic configuration diagram of a thin film forming apparatus for producing a conventional organic LED element. As shown in FIG. 6, in the thin film forming apparatus 101, the vacuum chamber 10
An evaporation source 103 is disposed below the evaporation source 2, and a substrate 104 which is a film formation target is disposed above the evaporation source 103. Then, the vapor of the organic material evaporated from the evaporation source 103 is deposited on the substrate 104 through the mask 105 to form an organic thin film having a predetermined pattern.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな従来の技術においては、基板を真空槽内の上部に配
置しなければならないため（デポアップ）、マスクを機
械的に固定しなければならず、マスクが歪んでしまうと
いう問題がある。特に、近年では基板が大型化している
ので、この問題が重要になってきている。However, in such a conventional technique, since the substrate has to be arranged in the upper part of the vacuum chamber (deposition up), the mask has to be mechanically fixed, There is a problem that the mask is distorted. In particular, this problem has become important because the size of the substrate has been increased in recent years.
【０００５】また、従来技術では、撓みやすい基板に有
機薄膜を形成することが困難であるという問題もある。The conventional technique also has a problem that it is difficult to form an organic thin film on a flexible substrate.
【０００６】本発明は、このような従来の技術の課題を
解決するためになされたもので、マスクの歪みの問題を
招くことなく大型の成膜対象物又は撓みやすい成膜対象
物に対して高精度のパターンを形成しうる蒸発源及び薄
膜形成装置を提供することを目的とする。The present invention has been made in order to solve the problems of the conventional techniques as described above, and can be applied to a large-sized film-forming object or a flexible film-forming object without causing the problem of mask distortion. It is an object to provide an evaporation source and a thin film forming apparatus capable of forming a highly accurate pattern.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
になされた請求項１記載の発明は、所定の蒸発材料を収
容する蒸発容器を備え、前記蒸発容器に、水平面に対し
て９０度未満の所定の角度で前記蒸発材料の蒸気を排出
する蒸発口が設けられている蒸発源である。請求項２記
載の発明は、請求項１記載の発明において、前記蒸発口
が、鉛直下方に蒸発材料を排出するように構成されてい
るものである。請求項３記載の発明は、請求項１又は２
のいずれか１項記載の発明において、前記蒸発容器が、
細長形状に形成されているものである。請求項４記載の
発明は、請求項３記載の発明において、前記蒸発容器の
長手方向に沿って蒸発口が設けられているものである。
請求項５記載の発明は、請求項１乃至４のいずれか１項
記載の発明において、前記蒸発容器に、モニター用蒸発
口が設けられているものである。一方、請求項６記載の
発明は、真空槽と、前記真空槽内に請求項１乃至５のい
ずれか１項記載の蒸発源を備え、前記蒸発源が、成膜対
象物に対して上方に位置するように構成されている薄膜
形成装置である。請求項７記載の発明は、請求項６記載
の発明において、前記蒸発源が、成膜対象物に対して相
対的に移動するように構成されているものである。請求
項８記載の発明は、請求項７記載の発明において、細長
形状に形成された蒸発容器を有する蒸発源を備え、前記
蒸発源が、成膜対象物に対して相対的に移動するように
構成され、前記蒸発源の移動方向が、前記蒸発容器の幅
方向であるものである。In order to achieve the above object, the invention according to claim 1 is provided with an evaporation container for containing a predetermined evaporation material, and the evaporation container is less than 90 degrees with respect to a horizontal plane. Is an evaporation source provided with an evaporation port for discharging the vapor of the evaporation material at a predetermined angle. According to a second aspect of the present invention, in the first aspect of the invention, the evaporation port is configured to discharge the evaporation material vertically downward. The invention according to claim 3 is the invention according to claim 1 or 2.
In the invention according to any one of items 1 to 3,
It is formed in an elongated shape. According to a fourth aspect of the invention, in the third aspect of the invention, an evaporation port is provided along the longitudinal direction of the evaporation container.
A fifth aspect of the present invention is the invention according to any one of the first to fourth aspects, wherein the evaporation container is provided with a monitor evaporation port. On the other hand, an invention according to claim 6 is provided with a vacuum chamber and the evaporation source according to any one of claims 1 to 5 in the vacuum chamber, and the evaporation source is disposed above a film formation target. It is a thin film forming apparatus configured to be positioned. According to a seventh aspect of the present invention, in the sixth aspect of the invention, the evaporation source is configured to move relative to the film formation target. The invention according to claim 8 is the invention according to claim 7, further comprising: an evaporation source having an evaporation container formed in an elongated shape, wherein the evaporation source moves relative to a film formation target. It is configured, and the moving direction of the evaporation source is the width direction of the evaporation container.
【０００８】本発明の蒸発源においては、蒸発容器に、
水平面に対して９０度未満の所定の角度で蒸発材料の蒸
気を排出する蒸発口が設けられていることから、成膜対
象物を下にしていわゆるデポダウン状態で蒸着を行うこ
とが可能になる。In the evaporation source of the present invention, the evaporation container is
Since the evaporation port for discharging the vapor of the evaporation material is provided at a predetermined angle of less than 90 degrees with respect to the horizontal plane, it is possible to perform the evaporation in a so-called depot down state with the film formation target facing down.
【０００９】その結果、本発明によれば、成膜対象物上
にマスクを配置して蒸着を行うことができるので、従来
技術のようなマスクの歪みの問題は発生せず、大型成膜
対象物に対して高精度のパターンを形成することができ
る。As a result, according to the present invention, since the mask can be placed on the film-forming target and vapor deposition can be performed, the problem of mask distortion unlike the prior art does not occur and a large-scale film-forming target can be obtained. A highly accurate pattern can be formed on an object.
【００１０】また、成膜対象物がフィルム等の撓みやす
い場合であっても、容易に高精度のパターンを形成する
ことが可能になる。Further, even when the film-forming target is a film or the like that is easily bent, it is possible to easily form a highly accurate pattern.
【００１１】そして、本発明においては、蒸発口から、
鉛直下方に蒸発材料を排出するように構成すれば、支持
台の上に成膜対象物を配置し、さらにその上にマスクを
配置することができるため、成膜対象物及びマスクに撓
みが生じないようにすることができる。また、支持台に
冷却機構を付加することによって成膜対象物及びマスク
を冷却することができる。Further, in the present invention, from the evaporation port,
If the evaporation material is discharged vertically downward, the film formation target can be placed on the support and the mask can be placed on the support, so that the film formation target and the mask are bent. You can avoid it. Further, the film formation target and the mask can be cooled by adding a cooling mechanism to the support base.
【００１２】また、蒸発容器が、細長形状に形成されて
いる場合には、成膜対象物に対してその幅方向に相対的
に移動させることによって、大きな成膜対象物や複数の
成膜対象物に対して蒸着を行う場合に、膜厚の均一な成
膜を行うことができる。In the case where the evaporation container is formed in an elongated shape, the evaporation container is moved in the width direction relative to the film-forming target so that a large film-forming target or a plurality of film-forming targets can be formed. When vapor deposition is performed on an object, a film having a uniform film thickness can be formed.
【００１３】この場合、特に蒸発容器の長手方向に沿っ
て蒸発口が設けることによって、より膜厚の均一化を図
ることが可能になる。In this case, the film thickness can be made more uniform by providing the evaporation port particularly along the longitudinal direction of the evaporation container.
【００１４】さらに、蒸発容器にモニター用蒸発口を設
けるようにすれば、常に蒸発速度の正確な測定を行うこ
とが可能になる。Furthermore, if the evaporation port for monitoring is provided in the evaporation container, it becomes possible to always measure the evaporation rate accurately.
【００１５】[0015]
【発明の実施の形態】以下、本発明に係る蒸発源及びこ
れを用いた薄膜形成装置の実施の形態を図面を参照して
詳細に説明する。図１は、本発明に係る薄膜形成装置の
好ましい実施の形態の正面側断面図、また、図２は、同
薄膜形成装置の側面側断面図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of an evaporation source and a thin film forming apparatus using the same according to the present invention will be described below in detail with reference to the drawings. 1 is a front side sectional view of a preferred embodiment of a thin film forming apparatus according to the present invention, and FIG. 2 is a side sectional view of the same thin film forming apparatus.
【００１６】図３は、本実施の形態における蒸発源の内
部構成を示す断面図、図４（ａ）は、本実施の形態にお
ける蒸発部の配置構成を示す断面図、図４（ｂ）は、同
蒸発部の配置構成を下方から見た平面図である。FIG. 3 is a sectional view showing the internal structure of the evaporation source in the present embodiment, FIG. 4 (a) is a sectional view showing the arrangement structure of the evaporation part in the present embodiment, and FIG. 4 (b) is FIG. 3 is a plan view of the arrangement configuration of the evaporation unit as seen from below.
【００１７】図１及び図２に示すように、本実施の形態
の薄膜形成装置１は、図示しない真空排気系に接続され
た真空槽２を有し、この真空槽２の上部には後述する蒸
発部３が配設されている。As shown in FIGS. 1 and 2, the thin film forming apparatus 1 of this embodiment has a vacuum chamber 2 connected to a vacuum exhaust system (not shown), and an upper portion of this vacuum chamber 2 will be described later. The evaporation unit 3 is provided.
【００１８】この蒸発部３の下方近傍には、蒸発部３か
ら蒸発する蒸気を制御するためのシャッター（図示せ
ず）が設けられている。A shutter (not shown) for controlling vapor evaporated from the evaporator 3 is provided near the lower part of the evaporator 3.
【００１９】一方、真空槽２の下部には、例えばベルト
コンベヤ等の搬送手段４が設けられ、搬送手段４上に載
置された基板（成膜対象物）５が、水平方向に搬送され
るようになっている（搬送方向Ｘ）。On the other hand, below the vacuum chamber 2, a transfer means 4 such as a belt conveyor is provided, and a substrate (film forming object) 5 placed on the transfer means 4 is transferred in the horizontal direction. (Transfer direction X).
【００２０】この場合、基板５の搬送方向Ｘは、後述す
るホスト蒸発源３０とドーパント蒸発源３１の幅方向に
該当する。In this case, the transfer direction X of the substrate 5 corresponds to the width direction of the host evaporation source 30 and the dopant evaporation source 31 which will be described later.
【００２１】基板５の上方近傍には成膜領域を定めるた
めのマスク６が設けられ、このマスク６は、搬送手段４
によって基板５とともに搬送されるように構成されてい
る。A mask 6 for defining a film formation region is provided in the vicinity of the upper portion of the substrate 5, and the mask 6 is used as the transport means 4.
Is configured to be transported together with the substrate 5.
【００２２】他方、蒸発部３は、複数の蒸発源３０、３
１から構成されている。本実施の形態の場合は、ホスト
材料を蒸発させるためのホスト蒸発源３０と、ドーパン
ト材料を蒸発させるためのドーパント蒸発源３１とを有
している。On the other hand, the evaporation unit 3 includes a plurality of evaporation sources 30 and 3.
It is composed of 1. In the case of the present embodiment, the host evaporation source 30 for evaporating the host material and the dopant evaporation source 31 for evaporating the dopant material are included.
【００２３】ホスト蒸発源３０とドーパント蒸発源３１
は、それぞれ細長の円筒形状の蒸発容器３２、３３を有
している。Host evaporation source 30 and dopant evaporation source 31
Has elongate cylindrical evaporation containers 32 and 33, respectively.
【００２４】これら蒸発容器３２、３３は、例えば、グ
ラファイト等の熱伝導性の良い材料からなるもので、基
板５より若干長くなるようにその長さが設定されてい
る。The evaporation containers 32 and 33 are made of a material having good thermal conductivity such as graphite, and their lengths are set to be slightly longer than the substrate 5.
【００２５】ここで、各ホスト蒸発源３０の蒸発容器３
２の内部には、所定の有機系の蒸発材料（例えばＡｌｑ
３）４０が収容部３０ａに収容されており、この蒸発材
料４０は、図示しないヒータによって加熱されるように
なっている。Here, the evaporation container 3 of each host evaporation source 30
2 has a predetermined organic evaporation material (for example, Alq
3) 40 is housed in the housing portion 30a, and the evaporation material 40 is heated by a heater (not shown).
【００２６】図４（ａ）（ｂ）に示すように、各ホスト
蒸発源３０は、基板搬送方向Ｘに向けて、所定のピッチ
をおいて平行に配列されている。As shown in FIGS. 4A and 4B, the host evaporation sources 30 are arranged in parallel in the substrate transfer direction X at a predetermined pitch.
【００２７】ここで、各ホスト蒸発源３０の蒸発容器３
２の下部の中央部には、その長手方向に沿って所定の間
隔で複数の蒸発口３４が直線的に設けられている。Here, the evaporation container 3 of each host evaporation source 30
A plurality of evaporation ports 34 are linearly provided in the central portion of the lower part of 2 along the longitudinal direction at predetermined intervals.
【００２８】本実施の形態の場合、各蒸発口３４は、所
定の大きさの真円形状に形成され、蒸発容器３２の直下
において基板５と対向するように基板５の幅方向（矢印
Ｄ方向）に直線的に配列されている。In the case of the present embodiment, each evaporation port 34 is formed in a perfect circular shape of a predetermined size, and is arranged in the width direction of the substrate 5 (direction of arrow D) so as to face the substrate 5 directly below the evaporation container 32. ) Are arranged linearly.
【００２９】これにより本実施の形態においては、蒸発
材料４０の蒸気は、蒸発口３４から鉛直下方（矢印Ｙ方
向）に排出されるようになっている。As a result, in this embodiment, the vapor of the evaporation material 40 is discharged vertically downward (in the direction of arrow Y) from the evaporation port 34.
【００３０】一方、ドーパント蒸発源３１は、ホスト蒸
発源３０と隣接する位置に配設され、所定のピッチをお
いて平行に配列されている。そして、各ドーパント蒸発
源３１の蒸発容器３３の内部には、所定の有機系の蒸発
材料（例えばＤＣＪＴＢ（4-dicyanomethylene-6-cp-ju
lolidinostyryl-2-tert-butyl-4H-pyran）、ルブレン
等）４１が収容部３１ａに収容されており、この蒸発材
料４１は、図示しないヒータによって加熱されるように
なっている。On the other hand, the dopant evaporation source 31 is arranged at a position adjacent to the host evaporation source 30 and arranged in parallel at a predetermined pitch. Then, inside the evaporation container 33 of each dopant evaporation source 31, a predetermined organic evaporation material (for example, DCJTB (4-dicyanomethylene-6-cp-ju) is used.
lolidinostyryl-2-tert-butyl-4H-pyran), rubrene, etc.) 41 is housed in the housing 31a, and the evaporation material 41 is heated by a heater (not shown).
【００３１】また、各ドーパント蒸発源３１の蒸発容器
３３の下部の中央部には、その長手方向に沿って所定の
間隔で複数の蒸発口３５が直線的に設けられている。Further, a plurality of evaporation ports 35 are linearly provided at predetermined intervals along the longitudinal direction of the evaporation container 33 in the lower part of the evaporation container 33 of each dopant evaporation source 31.
【００３２】この場合、各蒸発口３５は、所定の大きさ
の真円形状に形成され、ホスト蒸発源３０の場合と同じ
く蒸発容器３３の直下において基板５と対向するように
基板５の幅方向（矢印Ｄ方向）に直線的に配列されてい
る。In this case, each evaporation port 35 is formed in a perfect circular shape of a predetermined size, and in the width direction of the substrate 5 so as to face the substrate 5 directly below the evaporation container 33 as in the case of the host evaporation source 30. They are arranged linearly (in the direction of arrow D).
【００３３】これにより、蒸発材料４１の蒸気もまた蒸
発口３４から鉛直下方（矢印Ｙ方向）に排出されるよう
になっている。As a result, the vapor of the evaporation material 41 is also discharged vertically downward (direction of arrow Y) from the evaporation port 34.
【００３４】さらに、ホスト蒸発源３０の蒸発容器３２
及び各ドーパント蒸発源３１の蒸発容器３３の上部に
は、それぞれ所定の位置にモニター用蒸発口３６、３７
が設けられている。Further, the evaporation container 32 of the host evaporation source 30
Also, on the upper part of the evaporation container 33 of each dopant evaporation source 31, the evaporation ports for monitoring 36, 37 are provided at predetermined positions, respectively.
Is provided.
【００３５】そして、各蒸発容器３２及び蒸発容器３３
のモニター用蒸発口３６、３７の上方近傍には、各蒸発
材料４０、４１の蒸発速度を測定するための膜厚センサ
３８、３９が設けられている。Then, each evaporation container 32 and evaporation container 33
Film thickness sensors 38 and 39 for measuring the evaporation rates of the evaporation materials 40 and 41 are provided near the upper portions of the monitoring evaporation ports 36 and 37.
【００３６】このような構成を有する本実施の形態にお
いて基板５上に成膜を行う場合には、真空槽２内を所定
の圧力に調整した後、図示しないシャッターを閉じた状
態で、蒸発部３のホスト蒸発源３０及びドーパント蒸発
源３１内の蒸発材料４０、４１の加熱を開始する。In the case of forming a film on the substrate 5 in the present embodiment having such a structure, after adjusting the inside of the vacuum chamber 2 to a predetermined pressure, the shutter (not shown) is closed and the evaporation unit is formed. The heating of the evaporation materials 40 and 41 in the host evaporation source 30 and the dopant evaporation source 31 of No. 3 is started.
【００３７】これにより、各ホスト蒸発源３０及びドー
パント蒸発源３１の蒸発口３４、３５から蒸発材料４
０、４１の蒸気が放出されるが、この時点では、蒸発材
料４０、４１の蒸気はシャッターによって遮られるた
め、基板５には到達しない。As a result, the evaporation material 4 is supplied from the evaporation ports 34 and 35 of the host evaporation source 30 and the dopant evaporation source 31.
The vapors of 0 and 41 are released, but at this point, the vapors of the evaporation materials 40 and 41 are blocked by the shutter and do not reach the substrate 5.
【００３８】そして、膜厚センサ３８、３９による測定
によって蒸発材料４０、４１の蒸発速度が所定の値に到
達した時点でシャッターを開かせるとともに基板５の搬
送を開始する。Then, when the evaporation rate of the evaporation material 40, 41 reaches a predetermined value as measured by the film thickness sensors 38, 39, the shutter is opened and the substrate 5 is started to be conveyed.
【００３９】図３に示すように、本実施の形態の場合
は、各蒸発容器３２、３３の直下に蒸発口３４、３５が
設けられており、蒸発材料４０、４１の蒸気は、基板５
の上方からほぼ鉛直下方に、即ちデポダウン状態で基板
５に到達する。As shown in FIG. 3, in the case of the present embodiment, evaporation ports 34 and 35 are provided immediately below the evaporation containers 32 and 33, and the vapor of the evaporation materials 40 and 41 is the substrate 5
To the substrate 5 in a substantially vertically downward direction, that is, in a depot down state.
【００４０】そして、基板５を搬送させつつ所定時間成
膜を行い、所望の膜厚が得られた時点でシャッターを閉
じて成膜を終了する。Then, the film formation is carried out for a predetermined time while the substrate 5 is being conveyed, and when the desired film thickness is obtained, the shutter is closed and the film formation is completed.
【００４１】以上述べたように本実施の形態の蒸発部３
においては、各蒸発容器３２、３３に、蒸発材料４０、
４１の蒸気を鉛直下方に排出する蒸発口３４、３５が設
けられていることから、基板５を下にしていわゆるデポ
ダウン状態で蒸着を行うことが可能になる。As described above, the evaporation unit 3 of this embodiment
In each of the evaporation containers 32 and 33, the evaporation material 40,
Since the evaporation ports 34 and 35 for discharging the vapor of 41 vertically downward are provided, it becomes possible to perform vapor deposition in a so-called depot down state with the substrate 5 facing downward.
【００４２】その結果、本実施の形態によれば、基板５
上にマスク６を配置して蒸着を行うことができるので、
従来技術のようなマスクの歪みの問題は発生せず、大型
基板に対して高精度のパターンを形成することができ
る。As a result, according to the present embodiment, the substrate 5
Since the mask 6 can be placed on top of this for vapor deposition,
The problem of mask distortion unlike the conventional technique does not occur, and a highly accurate pattern can be formed on a large substrate.
【００４３】また、基板５がフィルム等の撓みやすい場
合であっても、容易に高精度のパターンを形成すること
が可能になる。Further, even if the substrate 5 is easily bent, such as a film, a highly accurate pattern can be easily formed.
【００４４】さらに、本実施の形態においては、各蒸発
容器３２、３３が、細長形状に形成されており、基板５
に対してその幅方向に相対的に移動させることから、大
型基板や複数の基板に対して蒸着を行う場合に、膜厚の
均一な成膜を行うことができる。Further, in the present embodiment, each evaporation container 32, 33 is formed in an elongated shape, and the substrate 5
Since it is relatively moved in the width direction, it is possible to form a film having a uniform film thickness when performing vapor deposition on a large substrate or a plurality of substrates.
【００４５】特に、本実施の形態の場合は、各蒸発容器
３２、３３の長手方向に沿って蒸発口３４、３５が設け
らていることから、より膜厚の均一化を図ることができ
る。Particularly, in the case of the present embodiment, since the evaporation ports 34 and 35 are provided along the longitudinal direction of the evaporation containers 32 and 33, the film thickness can be made more uniform.
【００４６】加えて、本実施の形態においては、各蒸発
容器３２、３３にモニター用蒸発口３６、３７を設け、
膜厚センサ３８、３９によって蒸発速度を測定すること
から、常に蒸発速度の正確な測定を行うことができるも
のである。In addition, in the present embodiment, each evaporation container 32, 33 is provided with a monitor evaporation port 36, 37.
Since the evaporation rate is measured by the film thickness sensors 38 and 39, the evaporation rate can always be accurately measured.
【００４７】図５は、本発明の他の実施の形態の要部を
示す概略構成図であり、以下上記実施の形態と対応する
部分については、同一の符号付してその詳細な説明を省
略する。FIG. 5 is a schematic configuration diagram showing a main part of another embodiment of the present invention. In the following, portions corresponding to those of the above embodiment will be designated by the same reference numerals and detailed description thereof will be omitted. To do.
【００４８】図５に示すように、本実施の形態の蒸発部
３Ａの場合は、上記実施の形態と同様のホスト蒸発源３
０及びドーパント蒸発源３１が、水平方向に対して９０
度未満の所定の角度αだけ傾斜させて配設されている。As shown in FIG. 5, in the case of the evaporation unit 3A of this embodiment, the host evaporation source 3 similar to that of the above embodiment is used.
0 and the dopant evaporation source 31 are 90
It is arranged so as to be inclined by a predetermined angle α less than degrees.
【００４９】また、成膜対象物である基板５も、水平方
向に対して９０度未満の所定の角度αだけ傾斜させた搬
送手段４Ａによってマスク６とともに搬送されるように
なっている。The substrate 5 as the film-forming target is also carried together with the mask 6 by the carrying means 4A inclined by a predetermined angle α of less than 90 degrees with respect to the horizontal direction.
【００５０】この場合、基板５の搬送方向は、上述の実
施の形態の場合と同様に、ホスト蒸発源３０とドーパン
ト蒸発源３１の幅方向である。In this case, the substrate 5 is conveyed in the width direction of the host evaporation source 30 and the dopant evaporation source 31 as in the case of the above-described embodiment.
【００５１】このような構成を有する本実施の形態によ
れば、水平方向に対して９０度未満の所定の角度αだけ
傾斜させた状態で基板５に対して蒸着を行うことから、
基板５の表面にパーティクル等が付着しにくいというメ
リットがある。その他の構成及び作用効果については上
述の実施の形態と同一であるのでその詳細な説明を省略
する。According to the present embodiment having such a configuration, vapor deposition is performed on the substrate 5 in a state of being inclined by a predetermined angle α of less than 90 degrees with respect to the horizontal direction.
There is an advantage that particles and the like are less likely to adhere to the surface of the substrate 5. Other configurations and operational effects are the same as those of the above-described embodiment, and thus detailed description thereof will be omitted.
【００５２】なお、本発明は上述の実施の形態に限られ
ることなく、種々の変更を行うことができる。例えば、
上述の実施の形態においては、蒸発源に対して基板を移
動させるようにしたが、蒸発源側を移動させるように構
成することも可能である。The present invention is not limited to the above-described embodiment, but various modifications can be made. For example,
Although the substrate is moved with respect to the evaporation source in the above-described embodiment, it is also possible to move the substrate on the evaporation source side.
【００５３】また、蒸発源と基板の相対的な移動方向
は、一方向のみならず、例えば往復移動させるなど種々
の移動を行うことが可能である。Further, the relative movement direction of the evaporation source and the substrate is not limited to one direction, and various movements such as reciprocating movement can be performed.
【００５４】さらに、上記実施の形態においては、蒸発
口をホール状に形成するようにしたが、本発明はこれに
限られず、例えば、楕円形状、長円形状、多角形状、十
文字形状や、スリット形状に形成することも可能であ
る。Further, in the above embodiment, the evaporation port is formed in the shape of a hole, but the present invention is not limited to this, and for example, an elliptical shape, an oval shape, a polygonal shape, a cross shape, or a slit. It is also possible to form it into a shape.
【００５５】さらにまた、有機ＬＥＤ素子用の蒸着装置
のみならず、種々の蒸着装置に適用することができる
が、有機ＬＥＤ素子用の蒸着装置に適用した場合に最も
効果的なものである。Further, it can be applied not only to the vapor deposition apparatus for the organic LED element but also to various vapor deposition apparatuses, but it is most effective when applied to the vapor deposition apparatus for the organic LED element.
【００５６】[0056]
【発明の効果】以上述べたように本発明によれば、マス
クの歪みの問題は発生せず、大型の成膜対象物に対して
高精度のパターンを形成することができる。また、成膜
対象物がフィルム等の撓みやすい場合であっても、容易
に高精度のパターンを形成することができる。As described above, according to the present invention, the problem of mask distortion does not occur, and a highly accurate pattern can be formed on a large object to be film-formed. Further, even when the film-forming target is a film or the like that is easily bent, a highly accurate pattern can be easily formed.
【図１】本発明に係る薄膜形成装置の好ましい実施の形
態の正面側断面図FIG. 1 is a front side sectional view of a preferred embodiment of a thin film forming apparatus according to the present invention.
【図２】同薄膜形成装置の側面側断面図FIG. 2 is a side sectional view of the thin film forming apparatus.
【図３】同実施の形態における蒸発源の内部構成を示す
断面図FIG. 3 is a sectional view showing an internal configuration of an evaporation source according to the same embodiment.
【図４】（ａ）：本実施の形態における蒸発部の配置構
成を示す断面図
（ｂ）：同蒸発部の配置構成を下方から見た平面図FIG. 4A is a cross-sectional view showing the arrangement configuration of an evaporation unit in the present embodiment. FIG. 4B is a plan view of the arrangement configuration of the evaporation unit seen from below.
【図５】本発明の他の実施の形態の要部を示す概略構成
図FIG. 5 is a schematic configuration diagram showing a main part of another embodiment of the present invention.
【図６】従来の有機ＬＥＤ素子を作成するための薄膜形
成装置の概略構成図FIG. 6 is a schematic configuration diagram of a thin film forming apparatus for producing a conventional organic LED element.
１…薄膜形成装置 ２…真空槽 ３…蒸発部 ５…基板
（成膜対象物） ３０…ホスト蒸発源 ３１…ドーパン
ト蒸発源 ３２、３３…蒸発容器 ３４、３５…蒸発口
３６、３７…モニター用蒸発口 ３８、３９…膜厚セ
ンサ ４０、４１…蒸発材料DESCRIPTION OF SYMBOLS 1 ... Thin film forming apparatus 2 ... Vacuum tank 3 ... Evaporation part 5 ... Substrate (object to be film-formed) 30 ... Host evaporation source 31 ... Dopant evaporation source 32, 33 ... Evaporation container 34, 35 ... Evaporation port 36, 37 ... Monitor Evaporation port 38, 39 ... Film thickness sensor 40, 41 ... Evaporation material
───────────────────────────────────────────────────── フロントページの続き (72)発明者 菊地 博 神奈川県茅ヶ崎市萩園2500 株式会社アル バック内 Ｆターム(参考） 3K007 AB18 DB03 FA01 4K029 BA62 BC07 BD00 CA01 DB12 EA02 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Hiroshi Kikuchi 2500 Hagien, Chigasaki-shi, Kanagawa Al In the back F-term (reference) 3K007 AB18 DB03 FA01 4K029 BA62 BC07 BD00 CA01 DB12 EA02
Claims (8)
え、 前記蒸発容器に、水平面に対して９０度未満の所定の角
度で前記蒸発材料の蒸気を排出する蒸発口が設けられて
いる蒸発源。1. An evaporation container comprising a predetermined evaporation material, wherein the evaporation container is provided with an evaporation port for discharging the evaporation material vapor at a predetermined angle of less than 90 degrees with respect to a horizontal plane. source.
するように構成されている請求項１記載の蒸発源。2. The evaporation source according to claim 1, wherein the evaporation port is configured to discharge the evaporation material vertically downward.
る請求項１又は２のいずれか１項記載の蒸発源。3. The evaporation source according to claim 1, wherein the evaporation container is formed in an elongated shape.
設けられている請求項３記載の蒸発源。4. The evaporation source according to claim 3, wherein an evaporation port is provided along the longitudinal direction of the evaporation container.
られている請求項１乃至４のいずれか１項記載の蒸発
源。5. The evaporation source according to claim 1, wherein the evaporation container is provided with a monitoring evaporation port.
発源を備え、 前記蒸発源が、成膜対象物に対して上方に位置するよう
に構成されている薄膜形成装置。6. A vacuum tank, and the evaporation source according to claim 1 in the vacuum tank, wherein the evaporation source is located above a film formation target. Thin film forming apparatus.
に移動するように構成されている請求項６記載の薄膜形
成装置。7. The thin film forming apparatus according to claim 6, wherein the evaporation source is configured to move relative to an object to be film-formed.
発源を備え、 前記蒸発源が、成膜対象物に対して相対的に移動するよ
うに構成され、 前記蒸発源の移動方向が、前記蒸発容器の幅方向である
請求項７記載の薄膜形成装置。8. An evaporation source having an evaporation container formed in an elongated shape, wherein the evaporation source is configured to move relative to an object to be film-formed, and a movement direction of the evaporation source is The thin film forming apparatus according to claim 7, which is in the width direction of the evaporation container.
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| JP2002121360A JP4216522B2 (en) | 2002-04-23 | 2002-04-23 | Evaporation source and thin film forming apparatus using the same |
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