JP2003306761A - Film deposition apparatus with mask positioning mechanism - Google Patents
Film deposition apparatus with mask positioning mechanismInfo
- Publication number
- JP2003306761A JP2003306761A JP2002115146A JP2002115146A JP2003306761A JP 2003306761 A JP2003306761 A JP 2003306761A JP 2002115146 A JP2002115146 A JP 2002115146A JP 2002115146 A JP2002115146 A JP 2002115146A JP 2003306761 A JP2003306761 A JP 2003306761A
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- Japan
- Prior art keywords
- substrate
- mask
- vapor deposition
- ccd
- alignment mechanism
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、マスク成膜のため
のマスク位置合せ機構を有する成膜装置に関する。成膜
方法は、真空蒸着、スパッタリングなど一般に蒸着法と
称されるものを含む。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus having a mask alignment mechanism for forming a mask. The film forming method includes what is generally called an evaporation method such as vacuum evaporation and sputtering.
【０００２】[0002]
【従来の技術】複数の蒸着源と、各蒸着源にマスクを介
して対向する成膜位置に基板搬送を行う基板搬送機構
と、回転軸回りに基板を回転する基板回転機構とを備え
る成膜装置として、従来、特開平１１−２２９１３５号
公報に示すものにより、各蒸着源による多点成膜を行う
ことが知られている。2. Description of the Related Art Film formation provided with a plurality of evaporation sources, a substrate transfer mechanism for transferring a substrate to a film formation position facing each evaporation source through a mask, and a substrate rotation mechanism for rotating a substrate around a rotation axis. As a device, a device disclosed in Japanese Patent Laid-Open No. 11-229135 has been conventionally known to perform multi-point film formation by each vapor deposition source.
【０００３】[0003]
【発明が解決しようとする課題】ところで、上記した従
来の成膜装置を用いてマスク成膜により、例えば、有機
エレクトロルミネッセンス素子用の画素蒸着などを行う
場合、複雑な幾何学的パターンを正確に形成することが
要求される。したがって、マスク成膜の際の基板とマス
クとの相対位置の制御を行う必要があり、このための基
板とマスクとの位置合せ機構は可能な限り高精度のもの
であることが望ましい。By the way, when a mask film is formed by using the above-described conventional film forming apparatus, for example, when performing pixel vapor deposition for an organic electroluminescence element, a complicated geometric pattern is accurately formed. Required to be formed. Therefore, it is necessary to control the relative position between the substrate and the mask during mask film formation, and it is desirable that the alignment mechanism between the substrate and the mask for this purpose be as accurate as possible.
【０００４】このような高い精度のマスク位置合せ機構
として、ＣＣＤカメラを用いた光学機械式位置合せ機
構、即ち、ＣＣＤアライメント機構が代表的である。Ｃ
ＣＤアライメント機構は、ＣＣＤカメラ画像中に表示さ
れる基板及びマスクのそれぞれのアライメントマークの
照準を複数点で同時に合致させることにより、基板とマ
スクとの相対位置を高い精度で位置制御することができ
る。A typical example of such a highly accurate mask alignment mechanism is an opto-mechanical alignment mechanism using a CCD camera, that is, a CCD alignment mechanism. C
The CD alignment mechanism can control the relative position of the substrate and the mask with high accuracy by simultaneously aligning the sights of the alignment marks of the substrate and the mask displayed in the CCD camera image at a plurality of points. .
【０００５】ＣＣＤアライメント機構は光学式であるた
め、ＣＣＤカメラの設置位置が装置構成上の障害物で規
制される場合には、反射部材などを適宜設置して、これ
らに反射させて基板及びマスクのアライメントマークを
カメラ画像に表示できるという利点がある。しかし、上
記したような可能な限りの高精度を得るためには、ＣＣ
Ｄカメラが、反射部材などを経由せずに、基板及びマス
クのアライメントマークを直接読み取れることが要望さ
れる。Since the CCD alignment mechanism is of an optical type, when the installation position of the CCD camera is restricted by an obstacle in the device configuration, a reflecting member or the like is appropriately installed and reflected by these members so that the substrate and the mask can be reflected. The advantage is that the alignment mark of can be displayed on the camera image. However, in order to obtain the highest possible accuracy as described above, CC
It is required that the D camera can directly read the alignment marks on the substrate and the mask without going through a reflection member or the like.
【０００６】本発明は、上記要望に鑑み、マスクの位置
合せに際し、ＣＣＤカメラによる基板及びマスクの直接
読み取りを可能として、高精度での位置合せを行うこと
ができるマスク位置合せ機構付き成膜装置を提供するこ
とを課題としている。In view of the above demands, the present invention is capable of directly reading a substrate and a mask with a CCD camera when aligning the mask, and is capable of performing highly accurate alignment with a mask alignment mechanism. The challenge is to provide.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するた
め、本発明の成膜装置は、複数の蒸着源と、これらの各
蒸着源にマスクを介して対向する成膜位置に基板搬送を
行う基板搬送機構と、回転軸回りに基板を回転する基板
回転機構と、基板に対するマスクの位置合せ機構とを備
える成膜装置において、このときのマスク位置合せ機構
を、上記した成膜位置の略直上に設置したＣＣＤカメラ
を用いたＣＣＤアライメント機構として構成する。In order to solve the above-mentioned problems, a film forming apparatus of the present invention conveys a substrate to a plurality of evaporation sources and film forming positions facing each of these evaporation sources through a mask. In a film forming apparatus including a substrate transfer mechanism, a substrate rotating mechanism that rotates a substrate around a rotation axis, and a mask alignment mechanism with respect to the substrate, the mask alignment mechanism at this time is located directly above the film formation position. It is configured as a CCD alignment mechanism using a CCD camera installed in.
【０００８】これによれば、基板搬送機構により蒸着源
に対向した成膜位置に搬送された基板に対してマスク成
膜を行う際に、成膜位置にある基板とマスクとの略直上
に設置したＣＣＤカメラで、基板とマスクとのアライメ
ントマークを直接読み取ることができる。そして、両者
のアライメントマークが合致しないときにはこれが合致
するまで、基板回転機構により基板を回転させて、これ
によりＣＣＤアライメント機構本来の高精度の位置合せ
を行う。According to this, when the mask film is formed on the substrate which has been transferred to the film formation position facing the vapor deposition source by the substrate transfer mechanism, the substrate is installed substantially directly above the mask at the film formation position. The CCD camera can directly read the alignment mark between the substrate and the mask. When the two alignment marks do not match, the substrate is rotated by the substrate rotating mechanism until they match, thereby performing the highly accurate alignment that is inherent to the CCD alignment mechanism.
【０００９】また、マスクに形成された開口部の基板に
対する相対位置を可動とすることにより、基板上の異な
った位置に種々の条件でパターン成膜が可能となる。Further, by making the relative position of the opening formed in the mask relative to the substrate movable, it becomes possible to form a pattern on different positions on the substrate under various conditions.
【００１０】さらに、それぞれ開口部の形状が異なる複
数のマスク板を用意して、この各マスク板を選択可能と
することにより、薄膜に形成する幾何学的パターンの選
択範囲を広げることができる。Further, by preparing a plurality of mask plates each having a different opening shape and making each mask plate selectable, the selection range of the geometric pattern formed on the thin film can be widened.
【００１１】[0011]
【発明の実施の形態】図１は、本発明のマスク位置合せ
機構付き２点蒸着装置を含む真空処理装置の略断面図で
ある。図１を参照して、本装置は、真空成膜装置１とグ
ローブボックス１ａに連通するロードロック室２とが仕
切りバルブ３を介して連通して構成されている。この装
置構成において、グローブボックス１ａは基板などの清
浄に効果的であり、有機エレクトロルミネッセンス素子
のように水分などの不純物混入防止が特に必要な成膜工
程に有用である。1 is a schematic cross-sectional view of a vacuum processing apparatus including a two-point vapor deposition apparatus with a mask alignment mechanism according to the present invention. With reference to FIG. 1, the present apparatus is configured such that a vacuum film forming apparatus 1 and a load lock chamber 2 that communicates with a glove box 1 a communicate with each other via a partition valve 3. In this device configuration, the glove box 1a is effective for cleaning the substrate and the like, and is useful for a film forming process in which it is necessary to prevent impurities such as water from being mixed in, such as an organic electroluminescence element.
【００１２】成膜装置１の上面には駆動機構部４とこれ
を介して対向する基板昇降機構５ａ、５ｂが設置されて
いる。駆動機構部４は、成膜装置１の略中心部の歯車６
に軸通する回転軸７を回転させる回転モータ８と、回転
軸７に嵌装して構成されるスイングアーム９の旋回軸９
ａを回転させるサーボモータ１０とを搭載している。ま
た、基板昇降機構５ａ、５ｂは伸縮可能なロッド６ａ、
６ｂをそれぞれ備えている。On the upper surface of the film forming apparatus 1, a drive mechanism section 4 and substrate elevating mechanisms 5a and 5b facing each other via the drive mechanism section 4 are installed. The drive mechanism unit 4 includes a gear 6 at a substantially central portion of the film forming apparatus 1.
A rotary motor 8 for rotating a rotary shaft 7 passing through the rotary shaft 7, and a swing shaft 9 of a swing arm 9 mounted on the rotary shaft 7.
The servo motor 10 for rotating a is mounted. In addition, the substrate elevating mechanism 5a, 5b is a retractable rod 6a,
6b respectively.
【００１３】そして、スイングアーム９の先端部には、
基板１１を保持する基板受け１２の支持ロッド１３が縣
吊されている。なお、支持ロッド１３は、スイングアー
ム９の先端部に昇降可能な状態で挿通されており、図１
に示すように、支持ロッド１３が、成膜装置１の基板昇
降機構５ａ、５ｂの直下に位置したとき、昇降ロッド６
ａ、６ｂに押圧されて、基板１１及び基板受け１２が上
下方向に昇降できる。At the tip of the swing arm 9,
The support rod 13 of the substrate receiver 12 that holds the substrate 11 is suspended. The support rod 13 is inserted through the tip of the swing arm 9 in a vertically movable state.
As shown in FIG. 5, when the support rod 13 is located immediately below the substrate elevating mechanisms 5a and 5b of the film forming apparatus 1, the elevating rod 6
The substrate 11 and the substrate receiver 12 can be vertically moved up and down by being pressed by a and 6b.
【００１４】このとき、下降する基板１１は最下端にお
いて、基板支持フレーム１４の凹部で支持されるマスク
１５ａ、１５ｂ上に載置される。また、マスク１５ａ、
１５ｂは、歯車６にそれぞれ噛合する図外のピニオンを
有し、歯車６により回転駆動されるマスクホルダ円板１
６ａ、１６ｂ上に保持されている。即ち、基板１１はマ
スク１５ａまたは１５ｂに近接または密着するので、マ
スクホルダ円板１６ａ、１６ｂはそれぞれ基板ホルダと
しても機能することになる。At this time, the descending substrate 11 is placed on the masks 15a and 15b supported by the recesses of the substrate support frame 14 at the lowermost end. Also, the mask 15a,
Reference numeral 15b has a pinion (not shown) that meshes with the gear 6, and the mask holder disk 1 is driven to rotate by the gear 6.
It is held on 6a and 16b. That is, since the substrate 11 is close to or in close contact with the mask 15a or 15b, the mask holder disks 16a and 16b also function as substrate holders, respectively.
【００１５】上記した基板昇降機構５ａ、５ｂにより、
基板１１は基板受け１２ごと昇降可能となっているが、
これに加えてスイングロッド９は、公知の機構により水
平方向にその伸縮を微調整できるように構成されてお
り、これにより基板１１の位置を水平方向に調整するこ
とも可能となっている。With the above-mentioned substrate elevating mechanism 5a, 5b,
The substrate 11 can be moved up and down together with the substrate receiver 12,
In addition to this, the swing rod 9 is configured so that the expansion and contraction thereof can be finely adjusted in the horizontal direction by a known mechanism, whereby the position of the substrate 11 can also be adjusted in the horizontal direction.
【００１６】また、基板昇降機構５ａ、５ｂのそれぞれ
には、これらを介して対向する位置に一対のＣＣＤカメ
ラ１７ａ、１７ｂ及び１８ａ、１８ｂが取り付けられ、
基板昇降機構５ａ、５ｂの直下位置で基板１１が下降す
る際に、基板１１とマスク１５ａまたは１５ｂとの位置
合せをＣＣＤアライメント機構により行えるように構成
されている。Further, a pair of CCD cameras 17a, 17b and 18a, 18b are attached to the substrate elevating mechanisms 5a, 5b at positions facing each other, respectively.
When the substrate 11 descends at a position directly below the substrate elevating mechanisms 5a and 5b, the CCD alignment mechanism can align the substrate 11 and the mask 15a or 15b.
【００１７】一方、成膜装置１の下方には一対の蒸着源
１９ａ、１９ｂが配置され、これらは、それぞれ直上に
蒸着源シャッタ２０ａ、２０ａが設けられている。On the other hand, a pair of vapor deposition sources 19a and 19b are disposed below the film forming apparatus 1, and vapor deposition source shutters 20a and 20a are provided directly above them.
【００１８】断面図として示した図１を斜視図として展
開すると図２のようになる。図面構成上省略したものが
あるが、用いた符号は図１のものと同一である。図２か
ら分るように、本発明の装置においては、ＣＣＤカメラ
１７ａ、１７ｂ及び１８ａ、１８ｂが、基板１１とマス
ク１５ａまたは１５ｂとの位置関係を直接読み取れる位
置に設置されている。When FIG. 1 shown as a sectional view is developed as a perspective view, it becomes as shown in FIG. The reference numerals used are the same as those in FIG. 1, although some are omitted in the drawing configuration. As can be seen from FIG. 2, in the apparatus of the present invention, the CCD cameras 17a, 17b and 18a, 18b are installed at positions where the positional relationship between the substrate 11 and the mask 15a or 15b can be directly read.
【００１９】成膜工程を行うに際しては、図１におい
て、最初に、グローブボックス室１ａ内で、乾燥窒素ガ
スなどの封入または流通により清浄作業を行った基板１
１をロードロック室２に搬送する。そして、その後に気
密にしたロードロック室２内を所定圧力に到達するま
で、図外の真空排気機構により真空排気を行う。一方、
成膜装置１においても所定圧力に到達させ、基板昇降機
構５ｂにより、マスク１５ｂに近接又は接触する最下端
位置に基板受け１２を位置させる。この状態で、仕切り
バルブ３を開放し、試料搬送装置２１のマニピュレータ
２２により基板１１を、基板受け１２に移送して基板１
１の受け渡しを行い、仕切りバルブ３を閉じる。In carrying out the film forming process, in FIG. 1, first, the substrate 1 which has been cleaned by enclosing or circulating dry nitrogen gas in the glove box chamber 1a.
1 is transferred to the load lock chamber 2. Then, after that, the interior of the airtight load lock chamber 2 is evacuated by a vacuum evacuation mechanism (not shown) until a predetermined pressure is reached. on the other hand,
In the film forming apparatus 1 as well, a predetermined pressure is reached, and the substrate elevating mechanism 5b positions the substrate receiver 12 at the lowermost position that is close to or in contact with the mask 15b. In this state, the partition valve 3 is opened, and the substrate 11 is transferred to the substrate receiver 12 by the manipulator 22 of the sample transfer device 21.
1 is delivered and the partition valve 3 is closed.
【００２０】このときの基板１１とマスク１５ｂとの相
対関係を図３に示す。基板やマスク部材には、通常、そ
の上下左右位置を明確にするためのアライメントマーク
が記入されている。この場合も、所望の幾何学的パター
ンを正確に形成するために、図３中、２４で示されるア
ライメントマークを適正位置に位置させる必要がある。
本発明の場合は、図１のＣＣＤカメラ１８ａ、１８ｂを
用いて精度良く位置合せを行う。即ち、ＣＣＤアライメ
ント機構により、上記のように受け渡した基板１１に位
置補正が必要と判断された場合には、基板受け１２によ
り基板１１をマスク１５ｂから一旦離間させ、基板１１
の位置を補正し、再びＣＣＤアライメント機構により位
置合せを行い、最適位置と判断された時点で基板１１を
マスク１５ｂに再び載置する。また、必要な場合は、マ
スクホルダ円板１６ｂを回転移動させてマスク位置を補
正しても良い。The relative relationship between the substrate 11 and the mask 15b at this time is shown in FIG. Alignment marks are usually written on the substrate and the mask member to clarify the vertical and horizontal positions thereof. Also in this case, in order to accurately form a desired geometric pattern, it is necessary to position the alignment mark indicated by 24 in FIG. 3 at an appropriate position.
In the case of the present invention, the CCD cameras 18a and 18b shown in FIG. That is, when the CCD alignment mechanism determines that the substrate 11 transferred as described above needs to be corrected in position, the substrate receiver 12 temporarily separates the substrate 11 from the mask 15b,
The position is corrected, the alignment is performed again by the CCD alignment mechanism, and the substrate 11 is placed on the mask 15b again when the optimum position is determined. If necessary, the mask holder disk 16b may be rotated to correct the mask position.
【００２１】このようにして、基板１１とマスク１５ｂ
との適正な相対位置を実現した後、メインシャッター２
３や蒸着源シャッタ２０ｂを開放し、マスク１５ｂを介
して基板１１に対するマスク成膜を開始する。In this way, the substrate 11 and the mask 15b
After achieving the proper relative position with the main shutter 2
3 and the vapor deposition source shutter 20b are opened, and mask film formation on the substrate 11 is started via the mask 15b.
【００２２】そして、所定の成膜を終了した後、基板昇
降機構５ｂを作動させて基板１１をマスク１５ｂから離
間し、サーボモータ１０の作動によりスイングアーム９
を半回転させ、基板昇降機構５ａの作動により、今度は
マスク１５ａ上に基板１１を載置する。このときの、基
板１１とマスク１５ａとの位置合せも、前述した場合と
同様にしてＣＣＤカメラ１７ａ、１７ｂを用いて正確に
行う必要がある。このような作動を繰り返して２点蒸着
による成膜を行うことができる。After the predetermined film formation is completed, the substrate elevating mechanism 5b is operated to separate the substrate 11 from the mask 15b, and the servo motor 10 operates to swing the swing arm 9b.
Then, the substrate 11 is placed on the mask 15a this time by operating the substrate lifting mechanism 5a. At this time, the alignment of the substrate 11 and the mask 15a also needs to be accurately performed using the CCD cameras 17a and 17b in the same manner as described above. By repeating such an operation, a film can be formed by two-point vapor deposition.
【００２３】なお、上記においては、図３においてマス
クホルダ円板１６ｂを、マスク１５ｂの適正位置への位
置合せに用いたが、図４に示す工程により１枚の基板１
１上にさまざまな条件の薄膜を複数形成することもでき
る。In the above description, the mask holder disk 16b is used for aligning the mask 15b to the proper position in FIG. 3, but one substrate 1 is formed by the process shown in FIG.
It is also possible to form a plurality of thin films under various conditions on 1.
【００２４】即ち、図４（ａ）に示すように、試料搬送
装置２１のマニピュレータ２２上に基板１１を載置した
状態で、穴パターンＰを有するマスク１５ｂの直上に基
板１１を搬送する。次に、図４（ｂ）に示すように、基
板受け１２を上昇させてこれにより基板１１を保持した
後、マニピュレータ２２のみ撤退させて、図４（ｃ）に
示す状態にする。このときにＣＣＤアライメント機構に
より位置合せを行い、基板１１とマスク１５ｂとの相対
位置が適正であれば、図４（ｄ）に示すように、基板受
け１２を下降させて、基板１１をマスク１５ｂ上に載置
する。この状態で、蒸着などにより基板１１に対してマ
スク成膜を行う。That is, as shown in FIG. 4A, with the substrate 11 placed on the manipulator 22 of the sample transport device 21, the substrate 11 is transported directly above the mask 15b having the hole pattern P. Next, as shown in FIG. 4B, the substrate receiver 12 is raised to hold the substrate 11, and then only the manipulator 22 is withdrawn to obtain the state shown in FIG. 4C. At this time, alignment is performed by the CCD alignment mechanism, and if the relative position between the substrate 11 and the mask 15b is proper, as shown in FIG. 4D, the substrate receiver 12 is lowered to place the substrate 11 on the mask 15b. Place on top. In this state, mask film formation is performed on the substrate 11 by vapor deposition or the like.
【００２５】所定のマスク成膜が終了した後に、図４
（ｅ）に示すように、基板受け１２を上昇させて基板１
１とマスク１５ｂとを離間させる。この状態で、図４
（ｆ）に示すように、次の成膜位置に到達するまで、マ
スクホルダ円板１６ｂを歯車６の回転作動により回転さ
せる。このとき、移動量の制御は歯車６の歯数により制
御するため、２回目の成膜（蒸着など）からは位置合せ
が不要となる。そして、図４（ｇ）では、図４（ｄ）と
同様に基板受け１２を下降させて基板１１をマスク１５
ｂ上に載置して、基板１１に対して次のマスク成膜を行
う。After the predetermined mask film formation is completed, FIG.
As shown in (e), the substrate receiver 12 is raised to raise the substrate 1
1 and the mask 15b are separated from each other. In this state,
As shown in (f), the mask holder disk 16b is rotated by the rotation operation of the gear 6 until the next film forming position is reached. At this time, since the control of the movement amount is controlled by the number of teeth of the gear 6, the alignment becomes unnecessary from the second film formation (vapor deposition or the like). Then, in FIG. 4G, the substrate receiver 12 is lowered to mask the substrate 11 with the mask 15 as in FIG.
Then, it is placed on the substrate b and the next mask film is formed on the substrate 11.
【００２６】この成膜工程を経ることにより、基板１１
上には種々の条件の薄膜を多数形成することができる。
このような工程は、特に、有機エレクトロルミネッセン
ス素子の画素蒸着の蒸着条件の検討に有用である。な
お、ここでは、歯車６によりマスクの位置制御を行った
が、もちろんパルスモータ等の使用によるものも可能で
ある。By passing through this film forming process, the substrate 11
A large number of thin films under various conditions can be formed on top.
Such a process is particularly useful for studying vapor deposition conditions for pixel vapor deposition of an organic electroluminescence element. Although the position of the mask is controlled by the gear 6 here, it is of course possible to use a pulse motor or the like.
【００２７】また、上記した薄膜の条件の範囲をさらに
広げるために、１枚のみならず複数の異なるマスクを選
択して用いることも有用である。このような複数マスク
の移動機構を用いた成膜装置１の概要斜視図を、本発明
の第２の態様として、図５に示す。このものは、レール
２５ａ、２５ｂ間に配置したマスク１５ｃ、１５ｄ、１
５ｅをハンドル２６の作動によりスライド可能とした移
動機構を備えている。各マスクの選択時には、前述した
ものと同様に、ＣＣＤカメラ１７ａ、１７ｂを用いて正
確に位置合せを行う。It is also useful to select and use not only one mask but also a plurality of different masks in order to further widen the range of conditions of the above-mentioned thin film. A schematic perspective view of the film forming apparatus 1 using such a mechanism for moving a plurality of masks is shown in FIG. 5 as a second aspect of the present invention. This is the mask 15c, 15d, 1 placed between the rails 25a, 25b.
5e is provided with a moving mechanism that can be slid by the operation of the handle 26. At the time of selecting each mask, the CCD cameras 17a and 17b are used to perform accurate alignment in the same manner as described above.
【００２８】この場合、マスク１５ｃ、１５ｄ、１５ｅ
に回転機構を加えることも可能であり、このようにする
ことにより、マスクによるパターンの選択と、さまざま
な条件で形成される薄膜とを組み合わせて、より広い選
択範囲の中から所望の薄膜を高精度で形成することが可
能となる。In this case, the masks 15c, 15d, 15e
It is also possible to add a rotation mechanism to this, and by doing so, by combining the selection of the pattern by the mask and the thin film formed under various conditions, the desired thin film can be raised from a wider selection range. It is possible to form with high precision.
【００２９】なお、本発明においては、成膜方法として
蒸着源１９ａ、１９ｂによる真空蒸着法を用いたが、本
発明はそれに限定されるものでなく、蒸着源の替りにス
パッタリングターゲットを用いたスパッタ法でも良く、
あるいは、それ以外にもＣＶＤ法などを採用することも
可能である。In the present invention, the vacuum vapor deposition method using the vapor deposition sources 19a and 19b was used as the film forming method, but the present invention is not limited to this, and sputtering using a sputtering target instead of the vapor deposition source is used. The law is fine,
Alternatively, a CVD method or the like can be adopted in addition to the above.
【００３０】[0030]
【発明の効果】以上の説明から明らかなように、本発明
の成膜装置は、ＣＣＤアライメント機構用のＣＣＤカメ
ラを基板及びマスクの直上に取り付けて、基板及びマス
クを直接読み取るため、ＣＣＤアライメント機構本来の
高精度で基板とマスクとの位置合せを行うことができ
る。As is apparent from the above description, in the film forming apparatus of the present invention, the CCD camera for the CCD alignment mechanism is mounted directly on the substrate and the mask, and the substrate and the mask are directly read. The substrate and the mask can be aligned with the original high precision.
【図１】本発明の成膜装置を含む真空処理装置の略断面
図FIG. 1 is a schematic sectional view of a vacuum processing apparatus including a film forming apparatus of the present invention.
【図２】本発明の成膜装置の斜視図FIG. 2 is a perspective view of a film forming apparatus of the present invention.
【図３】基板とマスクとの相対位置を示す図FIG. 3 is a diagram showing a relative position between a substrate and a mask.
【図４】（ａ）〜（ｇ）マスク成膜工程図4A to 4G are mask film formation process diagrams.
【図５】マスク移動機構を有する本発明の第２の態様FIG. 5 is a second aspect of the present invention having a mask moving mechanism.
１ 成膜装置 ７ 回転軸 ８ 回転モータ ９ スイングアーム １１ 基板 １２ 基板受け １５ａ １５ｂ １５ｃ １５ｄ １５ｅ マスク １７ａ １７ｂ １８ａ １８ｂ ＣＣＤカメラ １９ａ、１９ｂ 蒸着源 ２４ アライメントマーク Ｐ マスクの穴パターン 1 film deposition equipment 7 rotation axis 8 rotation motor 9 swing arm 11 board 12 board receiving 15a 15b 15c 15d 15e mask 17a 17b 18a 18b CCD camera 19a, 19b evaporation source 24 Alignment mark P mask hole pattern
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4K029 DB14 HA03 HA04 JA02 5F031 CA05 CA07 FA02 FA04 FA07 FA09 FA12 FA14 FA20 GA06 GA42 GA46 GA47 GA60 HA09 HA12 HA42 HA46 HA53 HA57 JA04 JA14 JA15 JA17 JA27 JA38 KA08 KA10 LA09 LA14 MA13 MA29 NA07 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 4K029 DB14 HA03 HA04 JA02 5F031 CA05 CA07 FA02 FA04 FA07 FA09 FA12 FA14 FA20 GA06 GA42 GA46 GA47 GA60 HA09 HA12 HA42 HA46 HA53 HA57 JA04 JA14 JA15 JA17 JA27 JA38 KA08 KA10 LA09 LA14 MA13 MA29 NA07
Claims (3)
介して対向する成膜位置に基板搬送を行う基板搬送機構
と、回転軸回りに基板を回転する基板回転機構と、前記
基板に対する前記マスクの位置合せ機構とを備える成膜
装置において、前記マスク位置合せ機構は、前記成膜位
置の略直上に設置したＣＣＤカメラを用いたＣＣＤアラ
イメント機構から成ることを特徴とするマスク位置合せ
機構付き成膜装置。1. A plurality of vapor deposition sources, a substrate transport mechanism for transporting the substrate to a film formation position facing each of the vapor deposition sources through a mask, a substrate rotating mechanism for rotating the substrate around a rotation axis, and the substrate. And a mask alignment mechanism for the mask, wherein the mask alignment mechanism comprises a CCD alignment mechanism using a CCD camera installed substantially directly above the film deposition position. Deposition system with mechanism.
置を可動とすることを特徴とする請求項１に記載のマス
ク位置合せ機構付き成膜装置。2. The film forming apparatus with a mask alignment mechanism according to claim 1, wherein the relative position between the opening of the mask and the substrate is movable.
数のマスク板から選択可能としたことを特徴とする請求
項１または２に記載のマスク位置合せ機構付き成膜装
置。3. The film forming apparatus with a mask alignment mechanism according to claim 1, wherein the mask can be selected from a plurality of mask plates each having a different opening.
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|---|---|---|---|
| JP2002115146A JP4187142B2 (en) | 2002-04-17 | 2002-04-17 | Film forming apparatus with mask alignment mechanism and film forming method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002115146A JP4187142B2 (en) | 2002-04-17 | 2002-04-17 | Film forming apparatus with mask alignment mechanism and film forming method |
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|---|---|
| JP2003306761A true JP2003306761A (en) | 2003-10-31 |
| JP4187142B2 JP4187142B2 (en) | 2008-11-26 |
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|---|---|---|---|
| JP2002115146A Expired - Fee Related JP4187142B2 (en) | 2002-04-17 | 2002-04-17 | Film forming apparatus with mask alignment mechanism and film forming method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006176809A (en) * | 2004-12-21 | 2006-07-06 | Ulvac Japan Ltd | Method for aligning mask with substrate, method for vapor-depositing organic thin film, and aligning device |
| JP2006260936A (en) * | 2005-03-17 | 2006-09-28 | Dainippon Printing Co Ltd | Method and device for setting metal mask |
| JP2006274396A (en) * | 2005-03-30 | 2006-10-12 | Showa Shinku:Kk | Method and apparatus for forming thin film |
| JP2006307247A (en) * | 2005-04-26 | 2006-11-09 | Ulvac Japan Ltd | Film deposition system |
| US20090015523A1 (en) * | 2007-07-12 | 2009-01-15 | Hitachi Displays, Ltd. | Organic Electroluminescence display device |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006176809A (en) * | 2004-12-21 | 2006-07-06 | Ulvac Japan Ltd | Method for aligning mask with substrate, method for vapor-depositing organic thin film, and aligning device |
| JP4510609B2 (en) * | 2004-12-21 | 2010-07-28 | 株式会社アルバック | Substrate and mask alignment method, organic thin film deposition method, and alignment apparatus |
| JP4587851B2 (en) * | 2005-03-17 | 2010-11-24 | 大日本印刷株式会社 | Metal mask setting method |
| JP2006260936A (en) * | 2005-03-17 | 2006-09-28 | Dainippon Printing Co Ltd | Method and device for setting metal mask |
| JP2006274396A (en) * | 2005-03-30 | 2006-10-12 | Showa Shinku:Kk | Method and apparatus for forming thin film |
| JP4737746B2 (en) * | 2005-03-30 | 2011-08-03 | 株式会社昭和真空 | Thin film forming method and apparatus |
| JP2006307247A (en) * | 2005-04-26 | 2006-11-09 | Ulvac Japan Ltd | Film deposition system |
| JP4701815B2 (en) * | 2005-04-26 | 2011-06-15 | 株式会社アルバック | Deposition equipment |
| US20090015523A1 (en) * | 2007-07-12 | 2009-01-15 | Hitachi Displays, Ltd. | Organic Electroluminescence display device |
| JP2016014175A (en) * | 2014-07-02 | 2016-01-28 | 株式会社アルバック | Film deposition apparatus |
| CN108103481A (en) * | 2018-01-25 | 2018-06-01 | 无锡盈芯半导体科技有限公司 | Substrate holds formula quartz boat under the arm automatically |
| CN111733382A (en) * | 2020-07-17 | 2020-10-02 | 上海微电子装备（集团）股份有限公司 | Net tensioning device and net tensioning method thereof |
| CN112331598A (en) * | 2020-10-27 | 2021-02-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer bearing device and wafer separation equipment |
| CN112331598B (en) * | 2020-10-27 | 2023-06-20 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer carrying device and wafer separating equipment |
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