JP2003298004A - High-frequency module of inter-device interference radio wave shielding type, and electronic device - Google Patents
High-frequency module of inter-device interference radio wave shielding type, and electronic deviceInfo
- Publication number
- JP2003298004A JP2003298004A JP2002102214A JP2002102214A JP2003298004A JP 2003298004 A JP2003298004 A JP 2003298004A JP 2002102214 A JP2002102214 A JP 2002102214A JP 2002102214 A JP2002102214 A JP 2002102214A JP 2003298004 A JP2003298004 A JP 2003298004A
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- Prior art keywords
- frequency module
- high frequency
- inter
- radio wave
- metal particles
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は素子間干渉電波シー
ルド型高周波モジュール及び電子装置に関するものであ
り、特に、デバイス相互の電磁波干渉が問題となってく
る２０ＧＨｚ以上のマイクロ波、ミリ波帯域高周波無線
機器等に実装する複数の能動素子を搭載した回路基板上
における素子間の電磁波干渉を抑える簡易型シールド構
造に特徴のある素子間干渉電波シールド型高周波モジュ
ール及び電子装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inter-element interference radio wave shield type high frequency module and an electronic device, and more particularly to microwave and millimeter wave band high frequency radio waves of 20 GHz or more where electromagnetic wave interference between devices becomes a problem. The present invention relates to an inter-element interference radio wave shield type high frequency module and an electronic device, which are characterized by a simple shield structure for suppressing electromagnetic wave interference between elements on a circuit board on which a plurality of active elements mounted in equipment or the like are mounted.
【０００２】[0002]
【従来の技術】近年、携帯電話、無線ＬＡＮ、或いは、
自動車レーダなどが広く普及しているが、この様な高周
波無線機器にはＭＭＩＣ（モノリシックマイクロ波Ｉ
Ｃ）等の高周波電子デバイスを高密度に実装するＭＣＭ
（Ｍｕｌｔｉ Ｃｈｉｐ Ｍｏｄｕｌｅ）型高周波回路
基板が搭載されている。2. Description of the Related Art In recent years, mobile phones, wireless LANs, or
Automotive radar and the like are widely used, but MMIC (monolithic microwave I
MCM for high-density mounting of high-frequency electronic devices such as C)
A (Multi Chip Module) type high frequency circuit board is mounted.
【０００３】従来、この様な高周波ＭＭＩＣの実装とし
ては、ＭＭＩＣをセラミック基板上にワイヤボンドある
いはフリップチップにより接続し、その上にセラミック
キャップを被せ、気密封止構造にし、キャップ内側に金
属箔や電波吸収体シートを貼り付けることで、干渉電波
をシールドする性質を併せ持ったシングルチップパッケ
ージが一般的であるので、ここで、図４を参照して従来
のシングルチップパッケージを説明する。Conventionally, in the mounting of such a high frequency MMIC, the MMIC is connected to a ceramic substrate by wire bonding or flip chip, and a ceramic cap is put on the MMIC to form an airtightly sealed structure, and a metal foil or a metal foil is formed inside the cap. Since a single-chip package that also has a property of shielding an interference radio wave by attaching an electromagnetic wave absorber sheet is general, a conventional single-chip package will be described here with reference to FIG.
【０００４】図４参照図４は、従来のシングルチップパ
ッケージの概略的断面図であり、表面配線４３及び裏面
配線層４４を設けるとともに、両者をビア４２によって
導通させたセラミック基板４１上に、ＭＭＩＣチップ３
１に設けたバンプ電極３２によってフリップチップボン
ディングしたのち、内側に電磁波シールド膜４６を設け
たセラミックキャップ４５を用いて気密封止したもので
ある。FIG. 4 is a schematic cross-sectional view of a conventional single-chip package, in which a front surface wiring 43 and a back surface wiring layer 44 are provided, and a MMIC is mounted on a ceramic substrate 41 which is electrically connected by a via 42. Chip 3
1 is flip-chip bonded by the bump electrode 32 provided on the first electrode and then hermetically sealed by using a ceramic cap 45 provided with an electromagnetic wave shielding film 46 inside.
【０００５】このシングルチップパッケージをコプレー
ナ線路を形成したアルミナ基板上に固定し、各シングル
チップパッケージ間をリボン等で相互接続することによ
って高周波モジュールを構成していた。A high-frequency module is constructed by fixing the single chip package on an alumina substrate having a coplanar line and interconnecting the single chip packages with a ribbon or the like.
【０００６】このような構造のシングルチップパッケー
ジを使用した高周波モジュールはコストがかなり高いた
め、最近では低コストな簡易封止型ＭＣＭ、即ち、樹脂
封止型ＭＣＭによるモジュール化が求められている。Since a high frequency module using a single chip package having such a structure has a considerably high cost, recently, a low cost simple sealing type MCM, that is, a resin sealing type MCM has been demanded to be modularized.
【０００７】[0007]
【発明が解決しようとする課題】しかし、樹脂封止型Ｍ
ＣＭにおいては、樹脂封止されたＭＭＩＣチップのシー
ルド対策、即ち、電磁波干渉（ＥＭＩ：Ｅｌｅｃｔｒｏ
ｍａｇｎｅｔｉｃ Ｉｎｔｅｒｆｅｒｅｎｃｅ）対策が
必要になる。However, the resin-sealed type M
In CM, measures for shielding the resin-sealed MMIC chip, that is, electromagnetic interference (EMI: Electro)
Measures against magnetic interference are required.
【０００８】したがって、本発明は、ＭＣＭ型回路基板
上に簡易封止して実装されたチップ間の電磁波干渉を抑
えることを目的とする。Therefore, an object of the present invention is to suppress electromagnetic wave interference between chips that are simply sealed and mounted on an MCM type circuit board.
【０００９】[0009]
【課題を解決するための手段】図１は、本発明の原理的
構成の説明図であり、ここで、図１を参照して本発明に
おける課題を解決するための手段を説明する。
図１参照
上記の課題を解決するために、本発明は、複数の能動素
子チップ３を配線２を設けた回路基板１上に搭載した高
周波モジュールにおいて、前記複数の能動素子チップ３
の内のミリ波以上の高周波帯域で作動する能動素子チッ
プ３を、前記能動素子チップ３の動作周波数帯域に電磁
波吸収効果のある金属粒子８を分散させた絶縁樹脂層６
によって封止したことを特徴とする。FIG. 1 is an explanatory view of the principle configuration of the present invention. Here, the means for solving the problems in the present invention will be described with reference to FIG. In order to solve the above problems, the present invention provides a high-frequency module in which a plurality of active element chips 3 are mounted on a circuit board 1 provided with wirings 2.
Of the active element chip 3 that operates in a high frequency band of a millimeter wave or higher, and an insulating resin layer 6 in which metal particles 8 having an electromagnetic wave absorbing effect are dispersed in the operating frequency band of the active element chip
It is characterized by being sealed by.
【００１０】この様に、絶縁樹脂層６中に金属粒子８を
分散させた電磁波吸収能を有する被覆樹脂層５を用い
て、必要な箇所だけ被覆することによって、回路基板１
上の配線２に被覆樹脂層５が接触しても隣の配線２とシ
ョートしない絶縁性と電磁波吸収性能を両立させること
ができ、この様な電磁波シールド構造によって、これま
で適用が困難であった高周波デバイスの簡易封止型ＭＣ
Ｍ実装が可能になる。なお、本発明における「能動素子
チップ」とは、チップに能動素子を含んだ半導体チップ
を意味するものであり、その他にどの様な素子が含まれ
ていても構わないものである。As described above, the circuit board 1 is coated with the coating resin layer 5 in which the metal particles 8 are dispersed in the insulating resin layer 6 and which has an electromagnetic wave absorbing ability, so as to cover only a necessary portion.
Even if the coating resin layer 5 comes into contact with the upper wiring 2, it is possible to achieve both the insulating property and the electromagnetic wave absorbing performance that do not cause a short circuit with the adjacent wiring 2, and such an electromagnetic wave shielding structure has been difficult to apply until now. Simple sealed MC for high frequency devices
M implementation becomes possible. The "active element chip" in the present invention means a semiconductor chip including an active element in the chip, and any element other than the above may be included.
【００１１】また、この様な絶縁樹脂層６中に金属粒子
８を分散させた電磁波吸収能を有する被覆樹脂層５を用
いて全ての能動素子チップ３を被覆するようにモールド
して良いものである。Further, all the active element chips 3 may be molded by using the coating resin layer 5 having the electromagnetic wave absorbing ability in which the metal particles 8 are dispersed in the insulating resin layer 6 as described above. is there.
【００１２】いずれの場合にも、１０10Ωｃｍ以上の絶
縁性樹脂６中に金属粒子８を分散させることによって、
被覆絶縁層５の絶縁性を確保して短絡を防止することが
できる。In any case, by dispersing the metal particles 8 in the insulating resin 6 of 10 10 Ωcm or more,
The insulating property of the covering insulating layer 5 can be ensured and a short circuit can be prevented.
【００１３】また、この場合の金属粒子８は、直径が１
０〜３０μｍの金属粒子８が望ましく、特に、ミリ波帯
電波に吸収域のあるＮｉ或いはＡｇのいずれかからなる
金属粒子８が望ましく、この金属粒子８に樹脂コート層
９を設けてマイクロカプセル化したマイクロカプセル型
金属粒子７とすることによって、回路基板１上の配線２
と被覆絶縁層５との短絡防止を確実に行うことができ
る。The metal particles 8 in this case have a diameter of 1
The metal particles 8 having a thickness of 0 to 30 μm are desirable, and particularly, the metal particles 8 made of either Ni or Ag having an absorption region for millimeter-wave charge waves are desirable. By using the microcapsule type metal particles 7 formed as described above, the wiring 2 on the circuit board 1
It is possible to reliably prevent short circuit between the insulating layer 5 and the insulating layer 5.
【００１４】上述の各電磁波シールド構造は、２０ＧＨ
ｚ〜６０ＧＨｚのマイクロ波、ミリ波帯高周波デバイス
に対して特に有効であり、この様な素子間干渉電波シー
ルド型高周波モジュールを搭載することによって、高周
波無線機器等の電子装置の信頼性が向上する。Each of the electromagnetic wave shield structures described above has a 20 GH
It is particularly effective for microwave and millimeter wave band high frequency devices of z to 60 GHz, and by mounting such an inter-element interference radio wave shield type high frequency module, the reliability of electronic devices such as high frequency radio equipment is improved. .
【００１５】[0015]
【発明の実施の形態】ここで、図２を参照して、本発明
の第１の実施の形態の高周波モジュールの製造工程を説
明するが、各図はそれぞれ概略的要部断面図である。
図２（ａ）参照
まず、コプレーナ線路１２をパターニングした、例え
ば、１０ｍｍ角で、厚さが０．４ｍｍのアルミナ基板１
１上に、４０ＧＨｚ２段アンプ構成の３×３ｍｍの２個
のＭＭＩＣチップ１３をＭＭＩＣチップ１３に設けたバ
ンプ電極１４を用いて、１ｍｍの間隔をあけてフリップ
チップボンディングする。BEST MODE FOR CARRYING OUT THE INVENTION Here, referring to FIG. 2, a manufacturing process of a high-frequency module according to a first embodiment of the present invention will be described. Each drawing is a schematic cross-sectional view of an essential part. 2A, first, the coplanar line 12 is patterned, for example, an alumina substrate 1 having a 10 mm square and a thickness of 0.4 mm.
Two 3 × 3 mm MMIC chips 13 each having a 40 GHz two-stage amplifier structure are flip-chip bonded onto the substrate 1 at intervals of 1 mm by using bump electrodes 14 provided on the MMIC chips 13.
【００１６】図２（ｂ）参照
次いで、お互いの樹脂が接触しないよう仕切りを置い
て、各ＭＭＩＣチップ１３の下部近傍にエポキシ樹脂を
注入し、例えば、９０〜１００℃に加熱して流動性を高
めることによって、ＭＭＩＣチップ１３の下部を埋め込
むエポキシ樹脂アンダーフィル層１５を形成する。Next, as shown in FIG. 2 (b), a partition is placed so that the resins do not come into contact with each other, and epoxy resin is injected near the bottom of each MMIC chip 13 and heated to, for example, 90 to 100.degree. By increasing the height, the epoxy resin underfill layer 15 filling the lower part of the MMIC chip 13 is formed.
【００１７】図２（ｃ）参照
次いで、マイクロカプセル型金属粒子１７を分散させた
エポキシ系合成樹脂２０をポッティングすることによっ
て、ＭＭＩＣチップ１３を覆う電磁波吸収ポッティング
層１６を形成する。Next, as shown in FIG. 2C, the electromagnetic wave absorption potting layer 16 covering the MMIC chip 13 is formed by potting the epoxy synthetic resin 20 in which the microcapsule type metal particles 17 are dispersed.
【００１８】この場合、マイクロカプセル型金属粒子１
７は、粒径が１０〜３０μｍのＮｉ粒子からなる金属粒
子１８を厚さが０．１〜１μｍの変成ポリエステル樹脂
からなる樹脂コート層１９を設けて絶縁化したものを用
いる。なお、電磁波吸収ポッティング層１６における金
属粒子１８の含有量は、例えば、４０重量％であり、残
りの６０重量％が母材樹脂である。In this case, the microcapsule type metal particles 1
For No. 7, metal particles 18 made of Ni particles having a particle diameter of 10 to 30 μm are insulated by providing a resin coat layer 19 made of a modified polyester resin having a thickness of 0.1 to 1 μm. The content of the metal particles 18 in the electromagnetic wave absorption potting layer 16 is, for example, 40% by weight, and the remaining 60% by weight is the base material resin.
【００１９】この様にして製造した高周波モジュールに
おけるアイソレーション特性Ｓ12をネットワークアナラ
イザによって測定すると同時に、フリップチップボンデ
ィングしただけ（アンダーフィル、ポッティング、電磁
波吸収塗料なし）の比較サンプルのアイソレーション特
性も測定し、両者を比較した。The isolation characteristic S 12 of the high-frequency module manufactured in this manner is measured by a network analyzer, and at the same time, the isolation characteristic of a comparative sample which is only flip-chip bonded (without underfill, potting, electromagnetic wave absorbing paint) is also measured. Then, the two were compared.
【００２０】その結果、フリップチップボンディングし
ただけの比較サンプルのアイソレーション特性が−２５
ｄＢであったのに対し、本発明の第１の実施の形態の高
周波モジュールのアイソレーション特性は−４０ｄＢで
あり、十分な電磁シールド効果が認められた。As a result, the isolation characteristic of the comparative sample just flip-chip bonded was -25.
While it was dB, the isolation characteristic of the high-frequency module of the first embodiment of the present invention was -40 dB, and a sufficient electromagnetic shielding effect was confirmed.
【００２１】この様に、本発明はマイクロカプセル型金
属粒子を分散させた樹脂を用いて電磁波シールド構造を
構成しているので、簡単な構成で樹脂封止した２０ＧＨ
ｚ以上の高周波デバイスに対して、優れた電磁波シール
ド特性と絶縁特性を両立することができる。As described above, according to the present invention, since the electromagnetic wave shield structure is constructed by using the resin in which the microcapsule type metal particles are dispersed, the resin-sealed 20GH is simple.
Excellent electromagnetic wave shielding properties and insulating properties can be compatible with high-frequency devices of z or higher.
【００２２】即ち、Ｎｉ粒子はミリ波帯電波に吸収域が
あるので、２０ＧＨｚ以上の高周波を効果的にシールド
することができ、また、導電性を有するＮｉ粒子を樹脂
コートすることによって絶縁化しているので、このＮｉ
粒子を含んだ樹脂層がコプレーナ線路１２に接しても、
グランド配線との間で短絡を起こすことがない。That is, since the Ni particles have an absorption region for millimeter-wave charged waves, it is possible to effectively shield a high frequency of 20 GHz or more, and the Ni particles having conductivity are coated with resin to be insulated. Since this is Ni
Even if the resin layer containing particles contacts the coplanar line 12,
No short circuit will occur with the ground wiring.
【００２３】次に、図３を参照して、本発明の第２の実
施の形態の高周波モジュールの製工程を説明するが、こ
の場合も各図は概略的要部断面図である。
図３（ａ）参照
まず、上記の第１の実施の形態と全く同様にして、コプ
レーナ線路１２をパターニングした、例えば、１０ｍｍ
角で、厚さが０．４ｍｍのアルミナ基板１１上に、４０
ＧＨｚ２段アンプ構成の３×３ｍｍの２個のＭＭＩＣチ
ップ１３をＭＭＩＣチップ１３に設けたバンプ電極１４
を用いて、１ｍｍの間隔をあけてフリップチップボンデ
ィングする。Next, the manufacturing process of the high frequency module according to the second embodiment of the present invention will be described with reference to FIG. 3. In this case as well, each drawing is a schematic cross-sectional view of a main part. Referring to FIG. 3A, the coplanar line 12 is patterned in the same manner as in the first embodiment, for example, 10 mm.
40 mm on the alumina substrate 11 with a thickness of 0.4 mm
Bump electrode 14 in which two 3 × 3 mm MMIC chips 13 each having a GHz two-stage amplifier configuration are provided on the MMIC chip 13.
Flip chip bonding is performed with a space of 1 mm.
【００２４】図３（ｂ）参照
次いで、お互いの樹脂が接触しないよう仕切りを置い
て、各ＭＭＩＣチップ１３の下部近傍にエポキシ樹脂を
注入し、例えば、９０〜１００℃に加熱して流動性を高
めることによって、ＭＭＩＣチップ１３の下部を埋め込
むエポキシ樹脂アンダーフィル層１５を形成する。Next, referring to FIG. 3 (b), a partition is placed so that the resins do not come into contact with each other, and epoxy resin is injected into the vicinity of the lower part of each MMIC chip 13. By increasing the height, the epoxy resin underfill layer 15 filling the lower part of the MMIC chip 13 is formed.
【００２５】図３（ｃ）参照
次いで、マイクロカプセル型金属粒子１７を分散させた
モールド用の比較的硬度の高いエポキシ系合成樹脂２２
を金型を用いてＭＭＩＣチップ１３全体をモールドする
ことによって電磁波吸収モールディング層２１を形成す
る。Next, referring to FIG. 3 (c), an epoxy-based synthetic resin 22 having a relatively high hardness for molding, in which the microcapsule type metal particles 17 are dispersed.
The electromagnetic wave absorption molding layer 21 is formed by molding the entire MMIC chip 13 using a mold.
【００２６】この場合も、マイクロカプセル型金属粒子
１７は、粒径が１０〜３０μｍのＮｉ粒子からなる金属
粒子１８を厚さが０．１〜１μｍの変成ポリエステル樹
脂からなる樹脂コート層１９を設けて絶縁化したものを
用いる。なお、電磁波吸収モールディング層１６におけ
る金属粒子１８の含有量は、例えば、４０重量％であ
り、残りの６０重量％が母材樹脂である。Also in this case, the microcapsule type metal particles 17 are provided with metal particles 18 made of Ni particles having a particle diameter of 10 to 30 μm and a resin coating layer 19 made of a modified polyester resin having a thickness of 0.1 to 1 μm. Use an insulated product. The content of the metal particles 18 in the electromagnetic wave absorption molding layer 16 is, for example, 40% by weight, and the remaining 60% by weight is the base material resin.
【００２７】この本発明の第２の実施の形態において
も、上記の第１の実施の形態の素子間干渉電波シールド
型高周波モジュールと全く同様の効果が得られる。Also in the second embodiment of the present invention, the same effect as that of the inter-element interference radio wave shield type high frequency module of the first embodiment can be obtained.
【００２８】以上、本発明の各実施の形態を説明してき
たが、本発明は各実施の形態に記載した構成に限られる
ものではなく、各種の変更が可能である。例えば、上記
各実施の形態の説明においては、実装する能動素子チッ
プを４０ＧＨｚのＭＭＩＣとしているが、周波数は任意
であり、２０ＧＨｚ以上の高周波、特に、２０ＧＨｚ〜
６０ＧＨｚの高周波に対して本発明の構成は特に有効で
あるが、２０ＧＨｚ以下或いは６０ＧＨｚ以上のデバイ
スに適用することを妨げるものではない。Although the respective embodiments of the present invention have been described above, the present invention is not limited to the configurations described in the respective embodiments, and various modifications can be made. For example, in the description of each of the above embodiments, the active element chip to be mounted is a 40 GHz MMIC, but the frequency is arbitrary, and a high frequency of 20 GHz or higher, particularly 20 GHz to
The configuration of the present invention is particularly effective for a high frequency of 60 GHz, but it does not prevent application to a device of 20 GHz or less or 60 GHz or more.
【００２９】また、上記の各実施の形態においては、図
示を簡単にするために基板に２個のＭＭＩＣを搭載した
場合を説明しているが、２個以上の多数の半導体チップ
を搭載しても良いことは言うまでもないことであり、第
１の実施の形態のようにポッティングを用いる場合に
は、２０ＧＨｚ以上の高周波帯で動作するＭＭＩＣのみ
をポッティングしても良いし、或いは、その他のチップ
も同時にポッティングしても良いものである。なお、上
記の第２の実施の形態のようにモールディングを用いる
場合には、基板全体をモールディングすることになる。Further, in each of the above-described embodiments, the case where two MMICs are mounted on the substrate has been described for the sake of simplicity of illustration, but a large number of semiconductor chips of two or more are mounted. Needless to say, when potting is used as in the first embodiment, only MMICs operating in a high frequency band of 20 GHz or higher may be potted, or other chips may be used. It is also possible to pot at the same time. When the molding is used as in the second embodiment, the entire substrate is molded.
【００３０】また、上記の各実施の形態においては、電
磁波吸収体層に分散する金属粒子をＮｉ粒子としている
が、Ｎｉ粒子に限られるものではなく、Ｎｉ粒子と同様
にミリ波帯電波に吸収領域を有するＡｇ粒子を用いても
良いものである。Further, in each of the above-described embodiments, the metal particles dispersed in the electromagnetic wave absorber layer are Ni particles, but the particles are not limited to Ni particles, and like the Ni particles, they are absorbed by a millimeter wave charged wave. It is also possible to use Ag particles having a region.
【００３１】さらには、シールド対象となる高周波の波
長に応じて、その波長域に吸収域を有する金属材料から
なる粒子を分散させても良いものである。Further, particles made of a metal material having an absorption region in the wavelength range may be dispersed according to the wavelength of the high frequency wave to be shielded.
【００３２】また、上記の各実施の形態においては言及
していないが、アンダーフィル層及びポッティング層を
構成するエポキシ樹脂中にシリカフィラーを混合して、
熱膨張系数等を調整しても良いものである。Although not mentioned in each of the above embodiments, a silica filler is mixed in the epoxy resin forming the underfill layer and the potting layer,
The coefficient of thermal expansion and the like may be adjusted.
【００３３】ここで、再び図１を参照して、改めて本発
明の詳細な特徴を説明する。再び、図１参照
（付記１） 複数の能動素子チップ３を配線２を設けた
回路基板１上に搭載した高周波モジュールにおいて、前
記複数の能動素子チップ３の内のミリ波以上の高周波帯
域で作動する能動素子チップ３を、前記能動素子チップ
３の動作周波数帯域に電磁波吸収効果のある金属粒子８
を分散させた絶縁樹脂層６によって封止したことを特徴
とする素子間干渉電波シールド型高周波モジュール。
（付記２） 複数の能動素子チップ３を配線２を設けた
回路基板１上に搭載した高周波モジュールにおいて、前
記複数の能動素子チップ３を、前記能動素子チップ３の
動作周波数帯域に電磁波吸収効果のある金属粒子８を分
散させた絶縁樹脂層６によってモールドしたことを特徴
とする素子間干渉電波シールド型高周波モジュール。
（付記３） 上記絶縁樹脂層６の絶縁抵抗が、１０10Ω
ｃｍ以上であることを特徴とする付記１または２に記載
の素子間干渉電波シールド型高周波モジュール。
（付記４） 上記金属粒子８の直径が、１０〜３０μｍ
であることを特徴とする付記１乃至３のいずれか１に記
載の素子間干渉電波シールド型高周波モジュール。
（付記５） 上記金属粒子８が、Ｎｉ或いはＡｇのいず
れかからなり、且つ、その表面に樹脂コート層９が設け
られたマイクロカプセル型金属粒子７であることを特徴
とする付記１乃至４のいずれか１に記載の素子間干渉電
波シールド型高周波モジュール。
（付記６） 上記能動素子チップ３と回路基板１１との
間に下部樹脂層４が設けられていることを特徴とする付
記１乃至５のいずれか１に記載の素子間干渉電波シール
ド型高周波モジュール。
（付記７） 上記能動素子チップ３が、少なくとも２０
ＧＨｚ〜６０ＧＨｚの高周波で動作する高周波素子を含
んでいることを特徴とする付記１乃至６のいずれか１に
記載の素子間干渉電波シールド型高周波モジュール。
（付記８） 付記１乃至７のいずれか１に記載の素子間
干渉電波シールド型高周波モジュールを搭載したことを
特徴とする電子装置。Here, the detailed features of the present invention will be described again with reference to FIG. Again, refer to FIG. 1 (Appendix 1) In a high frequency module in which a plurality of active element chips 3 are mounted on a circuit board 1 provided with wirings 2, the active element chips 3 operate in a high frequency band equal to or higher than a millimeter wave. The active element chip 3 is provided with metal particles 8 having an electromagnetic wave absorbing effect in the operating frequency band of the active element chip 3.
An inter-element interference radio wave shield type high-frequency module, characterized in that it is sealed by an insulating resin layer 6 in which is dispersed. (Supplementary Note 2) In a high-frequency module in which a plurality of active element chips 3 are mounted on a circuit board 1 provided with wiring 2, the plurality of active element chips 3 are provided with an electromagnetic wave absorption effect in an operating frequency band of the active element chips 3. An inter-element interference radio wave shield type high frequency module characterized by being molded by an insulating resin layer 6 in which certain metal particles 8 are dispersed. (Appendix 3) The insulation resistance of the insulating resin layer 6 is 10 10 Ω.
3. The inter-element interference radio wave shield type high frequency module according to appendix 1 or 2, wherein the high frequency module has a height of at least cm. (Supplementary Note 4) The diameter of the metal particles 8 is 10 to 30 μm.
5. The inter-element interference radio wave shield type high frequency module according to any one of appendices 1 to 3, characterized in that (Supplementary Note 5) The above-mentioned metal particles 8 are microcapsule type metal particles 7 made of either Ni or Ag and having a resin coating layer 9 provided on the surface thereof. An inter-element interference radio wave shield type high frequency module according to any one of the above. (Additional remark 6) The lower resin layer 4 is provided between the active element chip 3 and the circuit board 11, and the inter-element interference radio wave shield type high frequency module according to any one of additional remarks 1 to 5 is provided. . (Supplementary Note 7) The active element chip 3 has at least 20
7. The inter-element interference radio wave shield type high frequency module according to any one of appendices 1 to 6, which includes a high frequency element that operates at a high frequency of GHz to 60 GHz. (Supplementary Note 8) An electronic device, comprising the inter-element interference radio wave shield type high frequency module according to any one of Supplementary Notes 1 to 7.
【００３４】[0034]
【発明の効果】本発明によれば、マイクロカプセル型金
属粒子を含んだ樹脂からなるポッテキング層或いはモー
ルディング層のみからなる簡単な構造で電磁シールド構
造を形成しているので、高周波デバイスの簡易封止型Ｍ
ＣＭにおけるチップ間干渉ノイズのシールドが可能にな
り、それによって、高周波無線機器等に用いられる低コ
ストな実装基板の実現に寄与するところが大きい。According to the present invention, since the electromagnetic shield structure is formed by a simple structure consisting only of a potting layer or a molding layer made of a resin containing microcapsule type metal particles, a simple encapsulation of a high frequency device is achieved. Type M
Inter-chip interference noise in the CM can be shielded, which largely contributes to the realization of a low-cost mounting board used for high-frequency wireless devices and the like.
【図１】本発明の原理的構成の説明図である。FIG. 1 is an explanatory diagram of a principle configuration of the present invention.
【図２】本発明の第１の実施の形態の高周波モジュール
の製造工程の説明図である。FIG. 2 is an explanatory diagram of a manufacturing process of the high-frequency module according to the first embodiment of the present invention.
【図３】本発明の第２の実施の形態の高周波モジュール
の製造工程の説明図である。FIG. 3 is an explanatory diagram of a manufacturing process of the high-frequency module according to the second embodiment of the present invention.
【図４】従来のシングルチップパッケージの概略的断面
図である。FIG. 4 is a schematic cross-sectional view of a conventional single chip package.
１ 回路基板 ２ 配線 ３ 能動素子チップ ４ 下部樹脂層 ５ 被覆樹脂層 ６ 絶縁樹脂層 ７ マイクロカプセル型金属粒子 ８ 金属粒子 ９ 樹脂コート層 １１ アルミナ基板 １２ コプレーナ線路 １３ ＭＭＩＣチップ １４ バンプ電極 １５ エポキシ樹脂アンダーフィル層 １６ 電磁波吸収ポッティング層 １７ マイクロカプセル型金属粒子 １８ 金属粒子 １９ 樹脂コート層 ２０ エポキシ系合成樹脂 ２１ 電磁波吸収モールディング層 ２２ エポキシ系合成樹脂 ３１ ＭＭＩＣチップ ３２ バンプ電極 ４１ セラミック基板 ４２ ビア ４３ 表面配線層 ４４ 裏面配線層 ４５ セラミックキャップ ４６ 電磁波シールド膜 1 circuit board 2 wiring 3 Active element chip 4 Lower resin layer 5 Coating resin layer 6 Insulating resin layer 7 Microcapsule type metal particles 8 metal particles 9 Resin coat layer 11 Alumina substrate 12 coplanar tracks 13 MMIC chip 14 bump electrode 15 Epoxy resin underfill layer 16 Electromagnetic wave absorption potting layer 17 Microcapsule type metal particles 18 metal particles 19 Resin coat layer 20 Epoxy synthetic resin 21 Electromagnetic wave absorption molding layer 22 Epoxy synthetic resin 31 MMIC chip 32 bump electrode 41 Ceramic substrate 42 via 43 Surface wiring layer 44 Backside wiring layer 45 ceramic cap 46 Electromagnetic wave shield film
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4M109 AA01 EE07 5E321 AA22 BB32 BB60 GG05 GG11 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 4M109 AA01 EE07 5E321 AA22 BB32 BB60 GG05 GG11
Claims (5)
路基板上に搭載した高周波モジュールにおいて、前記複
数の能動素子チップの内のミリ波以上の高周波帯域で作
動する能動素子チップを、前記能動素子チップの動作周
波数帯域に電磁波吸収効果のある金属粒子を分散させた
絶縁樹脂層によって封止したことを特徴とする素子間干
渉電波シールド型高周波モジュール。1. A high frequency module having a plurality of active element chips mounted on a circuit board provided with wiring, wherein an active element chip that operates in a high frequency band of a millimeter wave or higher among the plurality of active element chips is An inter-element interference radio wave shield type high frequency module characterized by being sealed by an insulating resin layer in which metal particles having an electromagnetic wave absorbing effect are dispersed in the operating frequency band of the element chip.
路基板上に搭載した高周波モジュールにおいて、前記複
数の能動素子チップを、前記能動素子チップの動作周波
数帯域に電磁波吸収効果のある金属粒子を分散させた絶
縁樹脂層によってモールドしたことを特徴とする素子間
干渉電波シールド型高周波モジュール。2. A high-frequency module having a plurality of active element chips mounted on a circuit board provided with wiring, wherein the plurality of active element chips are made of metal particles having an electromagnetic wave absorbing effect in an operating frequency band of the active element chips. An inter-element interference radio wave shield type high frequency module characterized by being molded by a dispersed insulating resin layer.
ｃｍ以上であることを特徴とする請求項１または２に記
載の素子間干渉電波シールド型高周波モジュール。3. The insulation resistance of the insulating resin layer is 10 10 Ω.
The inter-element interference radio wave shield type high frequency module according to claim 1 or 2, wherein the high frequency module has an inter-element interference radio wave.
れかからなり、且つ、その表面に樹脂コート層が設けら
れたマイクロカプセル型金属粒子であることを特徴とす
る請求項１乃至３のいずれか１項に記載の素子間干渉電
波シールド型高周波モジュール。4. The microcapsule type metal particles, wherein the metal particles are made of Ni or Ag, and a resin coating layer is provided on the surface of the metal particles. 2. An inter-element interference radio wave shield type high frequency module according to item 1.
素子間干渉電波シールド型高周波モジュールを搭載した
ことを特徴とする電子装置。5. An electronic device comprising the inter-element interference radio wave shield type high frequency module according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002102214A JP2003298004A (en) | 2002-04-04 | 2002-04-04 | High-frequency module of inter-device interference radio wave shielding type, and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002102214A JP2003298004A (en) | 2002-04-04 | 2002-04-04 | High-frequency module of inter-device interference radio wave shielding type, and electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003298004A true JP2003298004A (en) | 2003-10-17 |
Family
ID=29388868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002102214A Pending JP2003298004A (en) | 2002-04-04 | 2002-04-04 | High-frequency module of inter-device interference radio wave shielding type, and electronic device |
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| Country | Link |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005051047A (en) * | 2003-07-29 | 2005-02-24 | Takenaka Komuten Co Ltd | Coated conductor and artificial dielectric |
| JP2006186299A (en) * | 2004-12-01 | 2006-07-13 | Ricoh Co Ltd | Electronic-component mounting device, protection circuit module for secondary battery and battery pack using the same |
| DE112007000081T5 (en) | 2006-05-16 | 2009-04-23 | Kabushiki Kaisha Toshiba | High frequency device module and manufacturing method thereof |
| US10373917B2 (en) | 2017-12-05 | 2019-08-06 | Tdk Corporation | Electronic circuit package using conductive sealing material |
| WO2019188113A1 (en) * | 2018-03-30 | 2019-10-03 | 日本電信電話株式会社 | High-frequency module |
-
2002
- 2002-04-04 JP JP2002102214A patent/JP2003298004A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005051047A (en) * | 2003-07-29 | 2005-02-24 | Takenaka Komuten Co Ltd | Coated conductor and artificial dielectric |
| JP2006186299A (en) * | 2004-12-01 | 2006-07-13 | Ricoh Co Ltd | Electronic-component mounting device, protection circuit module for secondary battery and battery pack using the same |
| DE112007000081T5 (en) | 2006-05-16 | 2009-04-23 | Kabushiki Kaisha Toshiba | High frequency device module and manufacturing method thereof |
| US7635918B2 (en) | 2006-05-16 | 2009-12-22 | Kabushiki Kaisha Toshiba | High frequency device module and manufacturing method thereof |
| US10373917B2 (en) | 2017-12-05 | 2019-08-06 | Tdk Corporation | Electronic circuit package using conductive sealing material |
| WO2019188113A1 (en) * | 2018-03-30 | 2019-10-03 | 日本電信電話株式会社 | High-frequency module |
| US11490549B2 (en) | 2018-03-30 | 2022-11-01 | Nippon Telegraph And Telephone Corporation | High-frequency module |
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