JP2003282691A - Electrostatic chuck for holding wafer and wafer separating method - Google Patents
Electrostatic chuck for holding wafer and wafer separating methodInfo
- Publication number
- JP2003282691A JP2003282691A JP2002085674A JP2002085674A JP2003282691A JP 2003282691 A JP2003282691 A JP 2003282691A JP 2002085674 A JP2002085674 A JP 2002085674A JP 2002085674 A JP2002085674 A JP 2002085674A JP 2003282691 A JP2003282691 A JP 2003282691A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cooling gas
- gas
- pressure
- electrostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマ処理装置
など使用され、処理中にウェハを静電気で吸着保持する
とともにウェハの処理終了後にウェハを取り外すウェハ
保持用静電チャックおよびウェハの剥離方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck for holding a wafer which is used in a plasma processing apparatus or the like and electrostatically holds a wafer during processing and removes the wafer after the wafer is processed, and a method for peeling the wafer.
【０００２】[0002]
【従来の技術】通常、半導体製造装置であるエッチング
およびＣＶＤ装置では、半導体装置の集積度を高めるた
めプラズマを用いた処理がおこなわれている。その処理
において半導体基板であるウェハがプラズマから受ける
エネルギ−によって加熱される温度を所望の温度になる
ように冷却したり、あるいは高温に加熱しかつ温度の均
一性を保ちつつウェハを固定保持する方法として、従来
使用されてきたメカニカルクランプに代わって静電吸着
が使用されるように至った。2. Description of the Related Art Generally, in an etching and CVD apparatus which is a semiconductor manufacturing apparatus, a process using plasma is performed in order to increase the degree of integration of the semiconductor device. A method of cooling the wafer, which is a semiconductor substrate in the process, by the energy received from the plasma to a desired temperature, or heating the wafer to a high temperature and fixing and holding the wafer while maintaining the temperature uniformity. As a result, electrostatic chuck has come to be used in place of the mechanical clamp that has been used conventionally.
【０００３】この静電吸着は、導体金属製の電極板に所
望の厚さの誘電体を被せ、この誘電体にウェハを載せウ
ェハと電極板との間に電圧を印加し発生する静電力によ
りウェハを固定保持することである。また、この静電吸
着は、ウェハの全面吸着が可能であることから、大口径
ウェハの固定保持には適している。しかも、ウェハの処
理面に物理的に力が加えられないことから、処理室内の
低発塵化が図れるという利点がある。In this electrostatic adsorption, an electrode plate made of a conductive metal is covered with a dielectric having a desired thickness, a wafer is placed on the dielectric, and a voltage is applied between the wafer and the electrode plate to generate electrostatic force. To hold the wafer fixed. Further, this electrostatic adsorption is suitable for fixing and holding a large-diameter wafer because it can adsorb the entire surface of the wafer. Moreover, since no physical force is applied to the processing surface of the wafer, there is an advantage that the dust generation in the processing chamber can be reduced.
【０００４】しかしながら、この静電吸着によるウェハ
の固定保持方法にも唯一の欠点があった。それは、ウェ
ハの処理が終了し、ウェハを誘電体より取り外すのに電
極板に印加した電圧を解除しても電荷が残留し、この残
留電荷による残留吸着力が作用しウェハが誘電体より離
脱できないという問題があった。そして、リフトピンな
どにより強制的にウェハを誘電体から離脱させようとし
ても、ウェハの割れや欠けおよびスクラッチなど生じさ
せることになる。However, this method of fixing and holding the wafer by electrostatic attraction has the only drawback. This is because even after the wafer processing is completed and the voltage applied to the electrode plate to remove the wafer from the dielectric is released, the electric charge remains, and the residual adsorption force due to this residual charge acts and the wafer cannot be separated from the dielectric. There was a problem. Even if the wafer is forcibly detached from the dielectric by lift pins or the like, the wafer will be cracked, chipped, or scratched.
【０００５】かかる問題を解消する方法として、例え
ば、特開２０００−３１２５２号公報に開示されてい
る。この方法は、ウェハを処理室へ搬送途中でウェハの
裏面に施されたシリコン酸化膜に単色光を照射し、その
反射光の強度を測定することでシリコン酸化膜の厚さを
求め、その厚さに応じて二つの電極板（内側および外
側）のそれぞれに印加する電圧シ−ケンスによりウェハ
を離脱することを特徴としている。A method for solving such a problem is disclosed in, for example, Japanese Patent Application Laid-Open No. 2000-31252. This method irradiates the silicon oxide film on the back surface of the wafer with monochromatic light while the wafer is being transferred to the processing chamber, and measures the intensity of the reflected light to determine the thickness of the silicon oxide film. The wafer is separated by a voltage sequence applied to each of the two electrode plates (inner side and outer side) according to the size.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上述し
た方法では、ウェハの裏面の酸化膜における厚さによっ
て電極に電圧シ−ケンスを印加しウェハの離脱を図って
いるが、ウェハの離脱を妨げる残留吸着力は、単にウェ
ハの裏面の酸化膜の厚さだけではなく、表面の金属配線
層の厚さや処理条件の出力および圧力と電極の個体差に
よって異なる。However, in the above-mentioned method, the voltage sequence is applied to the electrodes by the thickness of the oxide film on the back surface of the wafer to separate the wafer. The adsorption force depends not only on the thickness of the oxide film on the back surface of the wafer, but also on the thickness of the metal wiring layer on the front surface, the output of processing conditions, the pressure, and the individual difference of the electrodes.
【０００７】従って、本発明の目的は、ウェハの裏面の
酸化膜の厚さや表面の金属配線層の厚さ、処理条件の出
力および圧力と電極の個体差によらずウェハの割れやス
クラッチを発生させることなくウェハを離脱させること
ができるウェハ保持用静電チャックおよびウェハの剥離
方法を提供することにある。Therefore, an object of the present invention is to generate a wafer crack or a scratch regardless of the thickness of the oxide film on the back surface of the wafer, the thickness of the metal wiring layer on the front surface, the output of the processing conditions, the pressure, and the individual difference of the electrodes. An object of the present invention is to provide an electrostatic chuck for holding a wafer and a method for peeling a wafer, which allows the wafer to be detached without causing it.
【０００８】[0008]
【課題を解決するための手段】本発明の第１の特徴は、
プラズマ処理室に収納される上部電極に対向し配置され
る下部電極に固定保持されるとともにウェハを載置面を
もつ静電ステ−ジと、前記ウェハ載置台の載置面の前記
ウェハを突き上げたり下降したりする複数のリフトピン
と、前記ウェハと前記載置面との隙間に冷却ガスを供給
するガス供給装置と、供給される前記冷却ガスの圧力を
測定する圧力計と、前記隙間から前記冷却ガスが漏れる
量を検出する漏れ検出装置と、前記ウェハ載置台に埋設
される電極に電圧を印加する直流電源と、前記冷却ガス
の圧力を調節する圧力調節弁とを備えるウェハ保持用静
電チャックである。The first feature of the present invention is to:
An electrostatic stage having a wafer mounting surface that is fixed and held by a lower electrode that faces the upper electrode housed in the plasma processing chamber, and pushes up the wafer on the mounting surface of the wafer mounting table. And a plurality of lift pins that descend and descend, a gas supply device that supplies a cooling gas to the gap between the wafer and the mounting surface, a pressure gauge that measures the pressure of the supplied cooling gas, and the gap from the gap. A wafer holding electrostatic device including a leak detection device that detects the amount of cooling gas leaked, a DC power supply that applies a voltage to an electrode embedded in the wafer mounting table, and a pressure control valve that controls the pressure of the cooling gas. It's a chuck.
【０００９】また、前記冷却ガスの分子を解離させるイ
オナイザ−を備えることが望ましい。さらに、前記冷却
ガスは、ヘリウムガスであることが望ましい。そして、
好ましくは、前記漏れ検出装置は、前記ウェハと前記の
載置面との隙間から漏れる前記冷却ガスを収集するガス
収集管と、収集した前記冷却ガスの漏れ量を測定するガ
スデテクタとを備えることである。Further, it is desirable to provide an ionizer for dissociating the molecules of the cooling gas. Further, the cooling gas is preferably helium gas. And
Preferably, the leak detection device includes a gas collection pipe that collects the cooling gas that leaks from a gap between the wafer and the mounting surface, and a gas detector that measures a leak amount of the collected cooling gas. is there.
【００１０】本発明の第２の特徴は、プラズマ処理室に
収納される上部電極に対向し配置される下部電極に固定
保持されるとともにウェハを載置面をもつ静電ステ−ジ
と、前記ウェハ載置台の載置面の前記ウェハを突き上げ
たり下降したりする複数のリフトピンと、前記ウェハと
前記載置面との隙間に冷却ガスを供給するガス供給装置
と、供給される前記冷却ガスの圧力を測定する圧力計
と、前記隙間から前記冷却ガスが漏れる量を検出する漏
れ検出装置と、前記ウェハ載置台に埋設される電極に電
圧を印加する直流電源と、前記冷却ガスの圧力を調節す
る圧力調節弁と、前記冷却ガスの分子を解離させるイオ
ナイザ−とを備えるウェハ保持用静電チャックにおい
て、前記ウェハの処理後に、前記冷却ガスのガス圧を前
記プラズマ処理室の圧力より高めに設定し、前記隙間か
ら漏れる前記冷却ガスを検知し、前記冷却ガスの分子を
解離させガスのイオンにより前記静電ステ−ジの負電荷
を中和させながら前記冷却ガスの圧力により前記ウェハ
を前記静電ステ−ジから離脱させるウェハの剥離方法で
ある。A second feature of the present invention is an electrostatic stage having a wafer mounting surface and being fixedly held by a lower electrode which is arranged so as to face an upper electrode housed in a plasma processing chamber. A plurality of lift pins that push up or lower the wafer on the mounting surface of the wafer mounting table, a gas supply device that supplies a cooling gas to the gap between the wafer and the mounting surface, and the cooling gas supplied. A pressure gauge for measuring the pressure, a leak detection device for detecting the amount of the cooling gas leaked from the gap, a DC power source for applying a voltage to an electrode embedded in the wafer mounting table, and a pressure for the cooling gas. In the electrostatic chuck for holding a wafer, which comprises a pressure control valve for controlling the temperature and an ionizer for dissociating the molecules of the cooling gas, after the processing of the wafer, the gas pressure of the cooling gas is set to the pressure of the plasma processing chamber. It is set to a higher value, the cooling gas leaking from the gap is detected, the molecules of the cooling gas are dissociated, and the negative charge of the electrostatic stage is neutralized by the ions of the gas, while the pressure of the cooling gas is used to neutralize the negative charges. It is a method of peeling a wafer that separates the wafer from the electrostatic stage.
【００１１】[0011]
【発明の実施の形態】次に、本発明について図面を参照
して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
【００１２】図１は本発明の一実施の形態におけるウェ
ハ保持用静電チャックを説明するための図である。この
ウェハ保持用静電チャックは、図１に示すように、処理
室１７に収納される上部電極１８に対向し配置される下
部電極２に固定保持されるとともにウェハ２１を載置す
る載置面をもつ静電ステ−ジ１と、ウェハ２１と静電ス
テ−ジ１との隙間に冷却ガスを供給する冷却ガス供給管
４と、ウェハ２１を静電ステ−ジ１の上に突き上げるリ
フトピン５と、静電ステ−ジ１の電極に直流電圧を印加
するＥＳＣ電源１６とを備えている。FIG. 1 is a diagram for explaining an electrostatic chuck for holding a wafer according to an embodiment of the present invention. As shown in FIG. 1, this wafer holding electrostatic chuck is fixedly held by a lower electrode 2 which is arranged so as to face an upper electrode 18 housed in a processing chamber 17, and on which a wafer 21 is placed. Of the electrostatic stage 1, a cooling gas supply pipe 4 for supplying a cooling gas to a gap between the wafer 21 and the electrostatic stage 1, and a lift pin 5 for pushing the wafer 21 onto the electrostatic stage 1. And an ESC power supply 16 for applying a DC voltage to the electrodes of the electrostatic stage 1.
【００１３】また、静電ステ−ジ１に保持されたウェハ
２１と載置面との隙間から漏れる冷却ガスを収集するリ
ング状のガス収集管３がウェハ２１の周囲に配置され、
このガス収集管３は開閉弁６を介してガスディテクタ７
と配管により接続されている。さらに、冷却ガスは分子
量の小さいヘリウムガスが望ましく、そして、ヘリウム
ガスの漏れを検知するには、ガスディテクタ７として
は、市販のヘリウムリ−クディテクタを使用することが
望ましい。市販のリ−クディテクタとしては、例えば、
日本真空技術ＫＫ製のＤＵＭＳ−ＴＰ３などがある。A ring-shaped gas collecting pipe 3 for collecting the cooling gas leaking from the gap between the wafer 21 held on the electrostatic stage 1 and the mounting surface is arranged around the wafer 21.
This gas collecting pipe 3 is connected to a gas detector 7 via an opening / closing valve 6.
And connected by piping. Further, the cooling gas is preferably helium gas having a small molecular weight, and it is desirable to use a commercially available helium leak detector as the gas detector 7 in order to detect leakage of the helium gas. Examples of commercially available leak detectors include:
There is DUMS-TP3 manufactured by Nippon Vacuum Technology KK.
【００１４】一方、冷却ガス供給管４には、管内の圧力
を測定する圧力計１１と冷却ガスを電離させるイオナイ
ザ−１０と冷却ガス供給装置９から圧送される冷却ガス
の圧力を調節する圧力調節弁８が備えられている。On the other hand, in the cooling gas supply pipe 4, a pressure gauge 11 for measuring the pressure inside the pipe, an ionizer 10 for ionizing the cooling gas, and a pressure adjustment for adjusting the pressure of the cooling gas sent from the cooling gas supply device 9 are adjusted. A valve 8 is provided.
【００１５】この静電チャックはドライエッチンブ装置
に適用したものとして説明する。このドライエッチング
装置によるウェハの処理動作を説明すると、まず、図１
に示すように、静電ステ−ジ１にウェハ２１を載せる。
そして、処理室１７を真空排気管１４を介して真空排気
する。そして、処理室１７の圧力が１０-3Ｐ程度の圧力
にする。しかる後、ガス導入口１５よりエッチングガス
を導入する。次に、圧力調整弁（図示せず）を調整し、
処理室１７のガス圧を数Ｐ程度に維持する。次に、冷却
ガス供給装置９の開閉弁１３を開きウェハ２１と静電ス
テ−ジ１との隙間に冷却ガスを供給し、冷却ガスの圧力
が１ｋＰになるように圧力調節弁８により調整する。This electrostatic chuck will be described as being applied to a dry etching apparatus. The wafer processing operation by this dry etching apparatus will be described first with reference to FIG.
The wafer 21 is placed on the electrostatic stage 1 as shown in FIG.
Then, the processing chamber 17 is evacuated through the evacuation pipe 14. Then, the pressure of the processing chamber 17 is set to about 10 −3 P. Then, an etching gas is introduced through the gas inlet 15. Next, adjust the pressure control valve (not shown),
The gas pressure in the processing chamber 17 is maintained at about several P. Next, the opening / closing valve 13 of the cooling gas supply device 9 is opened to supply the cooling gas to the gap between the wafer 21 and the electrostatic stage 1, and the pressure of the cooling gas is adjusted to 1 kP by the pressure control valve 8. .
【００１６】次に、ＥＳＣ電源１６により静電ステ−ジ
１の電極に負の電位を印加し、高周波電源１２により静
電ステ−ジ１に高周波電力を印加する。このことによ
り、ウェハ２１は静電ステ−ジ１に吸着保持され、上部
電極１８と下部電極２との間にプラズマが発生しウェハ
２１はエッチング処理される。このとき、プラズマによ
り加熱されたウェハ２１は導入された冷却ガスにより冷
却され一定の温度を保つた状態で、ウェハ２１はエッチ
ング処理される。エッチング処理が終了すると、高周波
電源１２よる高周波電力およびＥＳＣ電源１６による下
部電極２および静電ステ−ジ１の電極への電圧の印加を
中止する。また、冷却ガスの供給も停止する。Next, the ESC power supply 16 applies a negative potential to the electrode of the electrostatic stage 1, and the high frequency power supply 12 applies high frequency power to the electrostatic stage 1. As a result, the wafer 21 is adsorbed and held on the electrostatic stage 1, plasma is generated between the upper electrode 18 and the lower electrode 2, and the wafer 21 is etched. At this time, the wafer 21 heated by the plasma is cooled by the introduced cooling gas and kept at a constant temperature, and the wafer 21 is etched. When the etching process is completed, the high frequency power from the high frequency power supply 12 and the application of the voltage to the lower electrode 2 and the electrode of the electrostatic stage 1 by the ESC power supply 16 are stopped. Moreover, the supply of the cooling gas is also stopped.
【００１７】図２はウェハを静電チャックを離脱させる
動作を説明するためのフロ−チャ−トである。次に、図
１および図２を参照してウェハの脱離動作を説明する。
まず、図２のステップＡで、図１の冷却ガス供給装置９
からのヘリウムガスの圧力を処理室１７内の圧力に対し
数ｋＰ高い陽圧に設定し、開閉弁１３を開き、ウェハ２
１と静電ステ−ジ１との隙間に送り込む。これと同時
に、ステップＢで、イオナイザ−１０を動作させ、送り
込まれたヘリウムガスの分子が解離される。FIG. 2 is a flow chart for explaining the operation of separating the wafer from the electrostatic chuck. Next, the wafer detaching operation will be described with reference to FIGS.
First, in step A of FIG. 2, the cooling gas supply device 9 of FIG.
The pressure of the helium gas from is set to a positive pressure several kP higher than the pressure in the processing chamber 17, the on-off valve 13 is opened, and the wafer 2
1 and the electrostatic stage 1. At the same time, in step B, the ionizer 10 is operated to dissociate the fed helium gas molecules.
【００１８】解離されたヘリウムイオンは静電ステ−ジ
１の負電荷と結合し、一方、解離された電子はウェハ２
１の正電荷と結合し中和する。このことにより残留吸着
力を発生させるセルフバイアスによる負の電位は接地電
位に近づくことになる。The dissociated helium ions combine with the negative charge of the electrostatic stage 1, while the dissociated electrons form the wafer 2.
It combines with the positive charge of 1 and neutralizes. As a result, the negative potential due to the self-bias that generates the residual attraction force approaches the ground potential.
【００１９】次に、ステップＣで、図１の開閉弁６を開
き、ガスディテクタ７の真空ポンプによりガス収集管３
を経てウェハ２１と静電ステ−ジ１との隙間から漏れる
ヘリウムガスが吸い込まれる。もし、ガスディテクタ７
が検出するガス漏れ量が規定以上あれば、ステップＤ
で、ガス圧をやや高く再設定し、ウェハ２１と静電ステ
−ジ１との隙間に送り込む。そして、開閉弁１３を閉じ
る。このとき、必要ならば、ステップＥで、スイッチ１
９ａおよびスイッチ１９ｂによりＥＳＣ電源１６の極性
を換え、静電ステ−ジ１の電極に正電位の電圧を印加し
ても良い。Next, at step C, the on-off valve 6 shown in FIG. 1 is opened, and the gas collector 7 is opened by the vacuum pump of the gas detector 7.
The helium gas leaking through the gap between the wafer 21 and the electrostatic stage 1 through the above is sucked. If the gas detector 7
If the amount of gas leak detected by is greater than the specified amount, step D
Then, the gas pressure is reset to a slightly higher value and fed into the gap between the wafer 21 and the electrostatic stage 1. Then, the on-off valve 13 is closed. At this time, if necessary, in step E, switch 1
The polarity of the ESC power supply 16 may be changed by 9a and the switch 19b, and a positive potential voltage may be applied to the electrode of the electrostatic stage 1.
【００２０】次に、ステップＦで、供給されたヘリウム
ガスの圧力降下が数秒以下なら、ステップＧで、図１の
エアシリンダ２０を動作させリフトピン５を突き上げ、
ウェハ２１を静電ステ−ジ１から離脱させる。もし、ス
テップＣで、ガス漏れが規定量に達しなければ、ステッ
プＡに戻り、ウェハ２１と静電ステ−ジ１との隙間にさ
らにヘリウムガスを供給し、ガス漏れが規定量に達する
まで供給し続ける。同様にして、ステップＦで、ガス圧
降下に時間がかかれば、ステップＤに戻り、ガス圧を再
設定し、ウェハ２１と静電ステ−ジ１との隙間にヘリウ
ムガスを供給し、ガス圧の降下速度を測定し、降下速度
が早くなるまで繰り返してヘリウムガスの供給を続け
る。Next, if the pressure drop of the supplied helium gas is several seconds or less in step F, the air cylinder 20 of FIG. 1 is operated to push up the lift pin 5 in step G.
The wafer 21 is removed from the electrostatic stage 1. If the gas leakage does not reach the specified amount in step C, the process returns to step A, and helium gas is further supplied to the gap between the wafer 21 and the electrostatic stage 1 until the gas leakage reaches the specified amount. Keep doing Similarly, if it takes time for the gas pressure to drop in step F, the process returns to step D, the gas pressure is reset, helium gas is supplied to the gap between the wafer 21 and the electrostatic stage 1, and the gas pressure is reduced. The descent rate of is measured, and the helium gas is continuously supplied until the descent rate becomes faster.
【００２１】以上説明したように、まず、ガス、のカセ
ット２９にガラス基板３０を収納する場合も、図２で説
明したように、ウェハ２１と静電ステ−ジ１との隙間に
ガスを送り込み、ガス漏れがあれば、すなわち、ウェハ
２１と静電ステ−ジ１との隙間があることを確認し、さ
らに、ガス圧を上げ、隙間をより拡げ完全にウェハ２１
を静電ステ−ジ１より離脱させることである。As described above, first, when the glass substrate 30 is housed in the gas cassette 29, the gas is fed into the gap between the wafer 21 and the electrostatic stage 1 as described with reference to FIG. If there is a gas leak, that is, it is confirmed that there is a gap between the wafer 21 and the electrostatic stage 1, the gas pressure is further increased to further widen the gap, and the wafer 21 is completely removed.
Is to be separated from the electrostatic stage 1.
【００２２】[0022]
【発明の効果】以上説明したように本発明は、ウェハと
静電ステ−ジの残留吸着力を発生させる負電荷を中和さ
せながらウェハと静電ステ−ジとの隙間に冷却用ガスの
圧力を加えることによって、ウェハの裏面の酸化膜の厚
さや表面の金属配線層の厚さ、処理条件の出力および圧
力と電極の個体差にかかわらずウェハを静電ステ−ジか
ら離脱することができるので、ウェハの割れや欠けおよ
びスクラッチなど起こさず歩留まりが向上するという効
果がある。As described above, according to the present invention, the cooling gas is provided in the gap between the wafer and the electrostatic stage while neutralizing the negative charges that generate the residual attraction force between the wafer and the electrostatic stage. By applying pressure, the wafer can be separated from the electrostatic stage regardless of the thickness of the oxide film on the back surface of the wafer, the thickness of the metal wiring layer on the front surface, the output of processing conditions, and the individual difference in pressure and electrodes. As a result, there is an effect that the yield is improved without causing cracks, chips or scratches on the wafer.
【図１】本発明の一実施の形態におけるウェハ保持用静
電チャックを説明するための図である。FIG. 1 is a view for explaining a wafer holding electrostatic chuck according to an embodiment of the present invention.
【図２】ウェハを静電チャックを離脱させる動作を説明
するためのフロ−チャ−トであるFIG. 2 is a flow chart for explaining the operation of separating the wafer from the electrostatic chuck.
１ 静電ステ−ジ ２ 下部電極 ３ ガス収集管 ４ 冷却ガス供給管 ５ リフトピン ６,１３ 開閉弁 ７ ガスディテクタ ８ 圧力調節弁 ９ 冷却ガス供給装置 １０ イオナイザ− １１ 圧力計 １２ 高周波電源 １４ 真空排気管 １３ 上下動機構 １５ ガス導入口 １６ ＥＳＣ電源 ２１ ウェハ 1 electrostatic stage 2 Lower electrode 3 gas collection tubes 4 Cooling gas supply pipe 5 lift pins 6,13 open / close valve 7 gas detector 8 Pressure control valve 9 Cooling gas supply device 10 Ionizer 11 pressure gauge 12 High frequency power supply 14 Vacuum exhaust pipe 13 Vertical movement mechanism 15 gas inlet 16 ESC power supply 21 wafers
Claims (6)
対向し配置される下部電極に固定保持されるとともにウ
ェハを載置面をもつ静電ステ−ジと、前記ウェハ載置台
の載置面の前記ウェハを突き上げたり下降したりする複
数のリフトピンと、前記ウェハと前記載置面との隙間に
冷却ガスを供給するガス供給装置と、供給される前記冷
却ガスの圧力を測定する圧力計と、前記隙間から前記冷
却ガスが漏れる量を検出する漏れ検出装置と、前記ウェ
ハ載置台に埋設される電極に電圧を印加する直流電源
と、前記冷却ガスの圧力を調節する圧力調節弁とを備え
ることを特徴とするウェハ保持用静電チャック。1. An electrostatic stage having a wafer mounting surface fixedly held by a lower electrode arranged to face an upper electrode housed in a plasma processing chamber, and a mounting surface of the wafer mounting table. A plurality of lift pins that push up or down the wafer, a gas supply device that supplies a cooling gas to the gap between the wafer and the mounting surface, and a pressure gauge that measures the pressure of the supplied cooling gas. A leak detection device that detects the amount of the cooling gas leaked from the gap, a DC power supply that applies a voltage to an electrode embedded in the wafer mounting table, and a pressure control valve that controls the pressure of the cooling gas. An electrostatic chuck for holding a wafer, which is characterized in that
イザ−を備えることを特徴とする請求項１記載のウェハ
保持用静電チャック。2. An electrostatic chuck for holding a wafer according to claim 1, further comprising an ionizer for dissociating molecules of the cooling gas.
とを特徴とする請求項１または請求項２記載のウェハ保
持用静電チャック。3. The electrostatic chuck for holding a wafer according to claim 1, wherein the cooling gas is helium gas.
の載置面との隙間から漏れる前記冷却ガスを収集するガ
ス収集管と、収集した前記冷却ガスの漏れ量を測定する
ガスデテクタとを備えることを特徴とする請求項１また
は請求項２記載のウェハ保持用静電チャック。4. The leak detection device includes a gas collecting pipe for collecting the cooling gas leaking from a gap between the wafer and the mounting surface, and a gas detector for measuring a leak amount of the collected cooling gas. The electrostatic chuck for holding a wafer according to claim 1, wherein the electrostatic chuck is for holding a wafer.
フトピンのいずれかと接続し前記空間部に前記冷却ガス
を供給することを特徴とする請求項１、請求項２請求項
３または請求項４記載のウェハ保持用静電チャック。5. The cooling gas is supplied to the space portion by connecting to any one of the gas supply pipe of the gas supply device and the lift pin. The electrostatic chuck for holding a wafer as described above.
対向し配置される下部電極に固定保持されるとともにウ
ェハを載置面をもつ静電ステ−ジと、前記ウェハ載置台
の載置面の前記ウェハを突き上げたり下降したりする複
数のリフトピンと、前記ウェハと前記載置面との隙間に
冷却ガスを供給するガス供給装置と、供給される前記冷
却ガスの圧力を測定する圧力計と、前記隙間から前記冷
却ガスが漏れる量を検出する漏れ検出装置と、前記ウェ
ハ載置台に埋設される電極に電圧を印加する直流電源
と、前記冷却ガスの圧力を調節する圧力調節弁と、前記
冷却ガスの分子を解離させるイオナイザ−とを備えるウ
ェハ保持用静電チャックにおいて、前記ウェハの処理後
に、前記冷却ガスのガス圧を前記プラズマ処理室の圧力
より高めに設定し、前記隙間から漏れる前記冷却ガスを
検知し、前記冷却ガスの分子を解離させガスのイオンに
より前記静電ステ−ジの負電荷を中和させながら前記冷
却ガスの圧力により前記ウェハを前記静電ステ−ジから
離脱させることを特徴とするウェハの剥離方法。6. An electrostatic stage having a wafer mounting surface fixedly held by a lower electrode arranged to face an upper electrode housed in a plasma processing chamber, and a mounting surface of the wafer mounting table. A plurality of lift pins that push up or down the wafer, a gas supply device that supplies a cooling gas to the gap between the wafer and the mounting surface, and a pressure gauge that measures the pressure of the supplied cooling gas. A leak detection device that detects the amount of the cooling gas leaking from the gap, a DC power supply that applies a voltage to an electrode embedded in the wafer mounting table, a pressure control valve that controls the pressure of the cooling gas, In an electrostatic chuck for holding a wafer, which comprises an ionizer for dissociating molecules of a cooling gas, the gas pressure of the cooling gas is set higher than the pressure of the plasma processing chamber after the processing of the wafer, and The cooling gas leaking from the gap is detected, the molecules of the cooling gas are dissociated, and the negative ions of the electrostatic stage are neutralized by the ions of the gas, while the pressure of the cooling gas moves the wafer to the electrostatic stage. A method for peeling a wafer, characterized in that the wafer is peeled off.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002085674A JP2003282691A (en) | 2002-03-26 | 2002-03-26 | Electrostatic chuck for holding wafer and wafer separating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002085674A JP2003282691A (en) | 2002-03-26 | 2002-03-26 | Electrostatic chuck for holding wafer and wafer separating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003282691A true JP2003282691A (en) | 2003-10-03 |
Family
ID=29232548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002085674A Pending JP2003282691A (en) | 2002-03-26 | 2002-03-26 | Electrostatic chuck for holding wafer and wafer separating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003282691A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007311462A (en) * | 2006-05-17 | 2007-11-29 | Disco Abrasive Syst Ltd | Electrostatic chuck table mechanism |
| JP2010010477A (en) * | 2008-06-27 | 2010-01-14 | Sumitomo Heavy Ind Ltd | Dechucking mechanism, vacuum device, dechucking method, and component for dechucking |
| JP2010021405A (en) * | 2008-07-11 | 2010-01-28 | Hitachi High-Technologies Corp | Plasma processing apparatus |
| WO2014042174A1 (en) * | 2012-09-12 | 2014-03-20 | 東京エレクトロン株式会社 | Detachment control method and plasma processing device |
| JP2015216390A (en) * | 2009-01-16 | 2015-12-03 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Substrate support with gas introduction opening |
| JP2015225890A (en) * | 2014-05-26 | 2015-12-14 | パナソニックＩｐマネジメント株式会社 | Plasma processing apparatus and method |
| JP2018186179A (en) * | 2017-04-25 | 2018-11-22 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate removal method |
| CN111006515A (en) * | 2019-11-22 | 2020-04-14 | 北京北方华创微电子装备有限公司 | Electrode assembly and high-temperature vacuum furnace |
| US10896843B2 (en) | 2017-03-24 | 2021-01-19 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Wafer holding device and wafer chucking and dechucking method |
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2002
- 2002-03-26 JP JP2002085674A patent/JP2003282691A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007311462A (en) * | 2006-05-17 | 2007-11-29 | Disco Abrasive Syst Ltd | Electrostatic chuck table mechanism |
| JP2010010477A (en) * | 2008-06-27 | 2010-01-14 | Sumitomo Heavy Ind Ltd | Dechucking mechanism, vacuum device, dechucking method, and component for dechucking |
| JP2010021405A (en) * | 2008-07-11 | 2010-01-28 | Hitachi High-Technologies Corp | Plasma processing apparatus |
| JP2015216390A (en) * | 2009-01-16 | 2015-12-03 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Substrate support with gas introduction opening |
| WO2014042174A1 (en) * | 2012-09-12 | 2014-03-20 | 東京エレクトロン株式会社 | Detachment control method and plasma processing device |
| US9966291B2 (en) | 2012-09-12 | 2018-05-08 | Tokyo Electron Limited | De-chuck control method and plasma processing apparatus |
| JP2015225890A (en) * | 2014-05-26 | 2015-12-14 | パナソニックＩｐマネジメント株式会社 | Plasma processing apparatus and method |
| US10896843B2 (en) | 2017-03-24 | 2021-01-19 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Wafer holding device and wafer chucking and dechucking method |
| JP2018186179A (en) * | 2017-04-25 | 2018-11-22 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate removal method |
| US10651071B2 (en) | 2017-04-25 | 2020-05-12 | Tokyo Electron Limited | Substrate processing apparatus and substrate removing method |
| CN111006515A (en) * | 2019-11-22 | 2020-04-14 | 北京北方华创微电子装备有限公司 | Electrode assembly and high-temperature vacuum furnace |
| CN111006515B (en) * | 2019-11-22 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Electrode assembly and high-temperature vacuum furnace |
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