JP2003282683A - Semiconductor production device - Google Patents
Semiconductor production deviceInfo
- Publication number
- JP2003282683A JP2003282683A JP2003008037A JP2003008037A JP2003282683A JP 2003282683 A JP2003282683 A JP 2003282683A JP 2003008037 A JP2003008037 A JP 2003008037A JP 2003008037 A JP2003008037 A JP 2003008037A JP 2003282683 A JP2003282683 A JP 2003282683A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- substrate holder
- substrate
- processed
- tweezers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体製造装置に関し、
詳しくは、各種半導体装置を製造する際に行われる酸
化、拡散、ＣＶＤなど各種熱処理を、処理時に発生する
熱応力とウエーハ自身の自重によって生ずる応力による
スリップ（転位）や、ウエーハと基板ホルダ（ウエーハ
保持治具）との接触によって発生するパーティクルやス
クラッチなどの障害を、効果的に抑制して行うことがで
きるとともに、上記基板ホルダ上へのウエハの載置およ
び上記ホルダ上からのウエーハの取り出しを、容易に行
うことができる半導体製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus,
More specifically, various heat treatments such as oxidation, diffusion, and CVD that are performed when manufacturing various semiconductor devices are subjected to slip (dislocation) due to thermal stress generated at the time of processing and stress generated by the weight of the wafer itself, and wafer and substrate holder (wafer). It is possible to effectively suppress the obstacles such as particles and scratches caused by the contact with the holding jig), and to place the wafer on the substrate holder and remove the wafer from the holder. , A semiconductor manufacturing apparatus that can be easily performed.
【０００２】[0002]
【特許文献１】特開平９−２５１９６１号公報[Patent Document 1] Japanese Unexamined Patent Publication No. 9-251961
【特許文献２】特開平６−１６３４４０号公報[Patent Document 2] JP-A-6-163440
【特許文献３】特開平１０−５０６２６号公報[Patent Document 3] Japanese Unexamined Patent Publication No. 10-50626
【特許文献４】特開平１０−２３７７８１号公報半導体
装置の形成においては、例えば酸化、拡散およびＣＶＤ
など、各種熱処理が行われる。このような熱処理を行う
ための熱処理装置としては、多数のウエーハ（被処理基
板）を、上下方向に適当な間隔でボート内に積層して配
置して所要の熱処理を行う、縦型熱処理装置が多く用い
られるようになった。この縦型熱処理装置においては、
上記多数のウエーハが、内部に所定の間隔で上下方向に
積層されたボートを反応管内に配置し、熱処理の目的に
応じて選択されたガスを、前記反応管内に流しながら所
望加熱手段を用いて加熱を行って、前記ボート内のウエ
ーハに所要熱処理を行うものである。When forming a semiconductor device, for example, oxidation, diffusion, and CVD are performed.
Various heat treatments are performed. As a heat treatment apparatus for performing such heat treatment, a vertical heat treatment apparatus that performs a required heat treatment by stacking a large number of wafers (substrates to be processed) in a boat at appropriate intervals in the vertical direction It has become popular. In this vertical heat treatment device,
A large number of the above wafers are arranged in a reaction tube in which boats that are vertically stacked at predetermined intervals are placed inside the reaction tube, and a gas selected according to the purpose of heat treatment is flown into the reaction tube by using a desired heating means. By heating, the wafer in the boat is subjected to required heat treatment.
【０００３】このような縦型熱処理装置用として用いら
れる従来のボートは、図７に示したように、天板１０、
底板１１およびこれらの天板１０と底板１１によって保
持された支柱１２より構成されている。図７に示したよ
うに、支柱１２には多数の溝１３が設けられており、ウ
エーハ４は、これら多くの支柱１２に形成された前記溝
１３によって保持される。なお、図７においては支柱１
２の上端部および下端部の近傍に形成された溝のみが示
され、他の部分に形成された溝は図示が省略されてい
る。As shown in FIG. 7, a conventional boat used for such a vertical heat treatment apparatus has a top plate 10,
It is composed of a bottom plate 11, a top plate 10 and columns 12 held by the bottom plate 11. As shown in FIG. 7, the pillar 12 is provided with a large number of grooves 13, and the wafer 4 is held by the grooves 13 formed in the large number of pillars 12. In addition, in FIG.
Only the grooves formed in the vicinity of the upper end portion and the lower end portion of 2 are shown, and the grooves formed in the other portions are not shown.
【０００４】また、前記特許文献１には、前記支柱に設
けた溝に傾斜面や曲面を設けること、およびリング状
（環状）のサセプタの上に処理すべきウエーハを置くこ
とが提案されており、前記特許文献２、特許文献３およ
び特許文献４には、リング状の基板ホルダの使用が提案
されている。Further, Japanese Patent Application Laid-Open No. 2004-242242 proposes to provide an inclined surface or a curved surface in a groove provided in the support, and to place a wafer to be processed on a ring-shaped (annular) susceptor. In the above-mentioned Patent Documents 2, 3, and 4, it is proposed to use a ring-shaped substrate holder.
【０００５】[0005]
【発明が解決しようとする課題】しかし、処理すべきウ
エーハを、ボートの支持柱に設けた溝によって保持する
場合は、図８から明らかなように、ウエーハ４を保持す
るための支柱１２に設けられた溝とウエーハ４との接触
部分が少ないため（図８の場合は３ケ所）、熱とウエー
ハ４の自重によって生じた応力を緩和できず、スリップ
が発生する。また、支柱１２に設けられた溝１３の鋭角
部分がウエーハ４に局所的に接触するため、熱によって
軟化されたウエーハにスクラッチが発生した。さらに
は、保持部の表面粗さが大きいため、その凸部とウエー
ハとの接触によってスクラッチが発生してしまう。前記
溝に傾斜面や曲面を形成しても、溝とウエーハ４との接
触部分が少なく、両者の接触面積も小さいため、前記ス
リップの発生は防止できない。However, when the wafer to be processed is held by the groove provided in the support column of the boat, as shown in FIG. 8, it is provided on the column 12 for holding the wafer 4. Since the contact portion between the groove and the wafer 4 is small (three places in the case of FIG. 8), the stress generated by the heat and the weight of the wafer 4 cannot be relaxed, and slip occurs. Further, since the acute angle portion of the groove 13 provided on the support column 12 locally contacts the wafer 4, scratches are generated on the wafer softened by heat. Further, since the surface roughness of the holding portion is large, scratches are generated due to the contact between the convex portion and the wafer. Even if the groove is formed with an inclined surface or a curved surface, the occurrence of the slip cannot be prevented because the contact area between the groove and the wafer 4 is small and the contact area between the both is small.
【０００６】また、前記リング状の基板ホルダ(サセプ
タ)の使用についても、前記各従来例には、基板ホルダ
上へのウエーハの載置や基板ホルダからのウエ−ハの取
り出しについては記載がなく、実用化のためにはさらに
検討が必要である。Also, regarding the use of the ring-shaped substrate holder (susceptor), there is no description in the above-mentioned conventional examples about placing the wafer on the substrate holder or taking out the wafer from the substrate holder. However, further study is necessary for practical application.
【０００７】本発明の目的は、従来技術の有する前記問
題を解決し、高温（８００℃以上）の熱処理のプロセス
においても、スリップ、パーティクルおよびスクラッチ
の発生を効果的に防止することのできる半導体製造装置
を提供することにある。An object of the present invention is to solve the above problems of the prior art and to effectively prevent the occurrence of slips, particles and scratches even in a high temperature (800 ° C. or higher) heat treatment process. To provide a device.
【０００８】本発明の他の目的は、前記リング状の基板
ホルダ上へのウエーハの載置や基板ホルダ上からのウエ
ーハの取り出しを、極めて容易、迅速かつ正確に行うこ
とのできる半導体製造装置を提供することである。Another object of the present invention is to provide a semiconductor manufacturing apparatus capable of mounting a wafer on the ring-shaped substrate holder and taking out the wafer from the substrate holder extremely easily, quickly and accurately. Is to provide.
【０００９】[0009]
【課題を解決するための手段】前記目的を達成するため
の本発明の半導体製造装置は、被処理基板を載置する円
環状の基板ホルダと、当該基板ホルダ上に載置された前
記被処理基板を処理する基板処理室を具備し、前記基板
ホルダは、前記被処理基板の縁部をその上に支持する支
持部と、当該支持部が互いに離間する部分に当該支持部
の端部に接して設けられた前記支持部の表面より低い表
面を有する接続部を有し、前記支持部上に載置された前
記被処理基板を、前記基板処理室に収容して所定の処理
を行うことを特徴とする。To achieve the above object, a semiconductor manufacturing apparatus of the present invention comprises an annular substrate holder on which a substrate to be processed is placed, and the object to be processed placed on the substrate holder. The substrate holder includes a substrate processing chamber for processing a substrate, and the substrate holder is in contact with an end portion of the support portion at a portion where the support portion supports the edge portion of the substrate to be processed thereon and the support portion. A connecting part having a surface lower than the surface of the supporting part provided thereon, and the substrate to be processed placed on the supporting part is accommodated in the substrate processing chamber to perform a predetermined process. Characterize.
【００１０】すなわち、本発明において用いられる基板
ホルダは円環状（リング状）であり、このような円環状
の基板ホルダを用いることにより、ウエーハ（被処理基
板）を支持柱の溝によって直接支持する従来の場合より
も、ウエーハ支持部との接触面積がはるかに大きく、支
柱の溝によってウエーハを直接支持した際に生ずる前記
問題は効果的に解決される。That is, the substrate holder used in the present invention has an annular shape (ring shape), and by using such an annular substrate holder, the wafer (substrate to be processed) is directly supported by the groove of the supporting column. The contact area with the wafer supporting portion is much larger than in the conventional case, and the above-mentioned problems that occur when the wafer is directly supported by the grooves of the columns are effectively solved.
【００１１】熱処理の際におけるウエーハの昇降温およ
び熱処理中における高温によって、ウエーハは変形す
る。しかし、前記のように、円環状の基板ホルダを用い
ることにより、ウエーハを支持柱の溝に直接保持した場
合よりも、ウエーハ保持部の面積がはるかに広くなり、
ウエーハが無理なく支持されるため、ウエーハが変形し
ても、スリップの発生は効果的に防止される。また、基
板ホルダが円環状であるため、ヒータからの熱は基板ホ
ルダによって吸収されて、ウエーハ面内の温度差が緩和
され、熱処理の均一性が向上する。基板ホルダの外径が
ウエーハより大きければ、このような効果はさらに大き
くなる。The wafer is deformed by the temperature rise and fall of the wafer during the heat treatment and the high temperature during the heat treatment. However, as described above, by using the annular substrate holder, the area of the wafer holding portion becomes much wider than when the wafer is directly held in the groove of the supporting column,
Since the wafer is supported reasonably, even if the wafer is deformed, the occurrence of slip is effectively prevented. Further, since the substrate holder has an annular shape, the heat from the heater is absorbed by the substrate holder, the temperature difference in the wafer surface is reduced, and the uniformity of the heat treatment is improved. If the outer diameter of the substrate holder is larger than that of the wafer, such an effect is further enhanced.
【００１２】しかも、例えば図３に示したように、本発
明において用いられる円環状の基板ホルダ１は、表面が
高い円弧状の部分である支持部２と、この支持部２の端
部に接して形成された円弧状の凹部（支持部２の表面よ
り表面が低い部分）である接続部３を有しており、図１
に示したように、前記支持部２の上に処理すべきウエー
ハ４が載置される。前記接続部３は、ウエーハ移載機の
ツイーザよりも広い幅を有しており、この接続部３に前
記ツイーザを抜き差しさせることによって、前記支持部
２上へのウエーハ４の載置、および前記支持部２上から
ツイーザ上へのウエーハ４の取り出しを、極めて容易に
行うことができる。Further, as shown in FIG. 3, for example, the annular substrate holder 1 used in the present invention is in contact with the support portion 2 which is a high-arc-shaped portion and the end portion of the support portion 2. 1 has a connecting portion 3 which is an arcuate concave portion (a portion whose surface is lower than the surface of the supporting portion 2) formed by
As shown in FIG. 3, the wafer 4 to be processed is placed on the support 2. The connecting portion 3 has a width wider than that of the tweezers of the wafer transfer machine. By inserting or removing the tweezers into or from the connecting portion 3, the wafer 4 is placed on the supporting portion 2, and The wafer 4 can be taken out from the support portion 2 onto the tweezers very easily.
【００１３】すなわち、処理すべきウエーハを載せたツ
イーザ（図示されていない）を、図１に示した矢印１３
の方向に、前記接続部３上を移動させると、前記のよう
に、前記接続部３はツイーザより広い幅を有し、ツイー
ザが接続部３を通過できるので、ツイーザは基板ホルダ
１内に入る。ツイーザ上のウエーハ４が、基板ホルダ１
とほぼ同心の位置に到達すると、ツイーザは停止し、そ
の位置でツイーザを下降させる。このようにすれば、基
板ホルダ１の高い部分である支持部２によってウエーハ
４の縁部が支持されて、基板ホルダ１上に載置され、ウ
エーハ４はツイーザから分離される。この状態でツイー
ザを前記矢印１３とは逆の方向に動かせば、ウエーハ４
は支持部２の上に残り、ツイーザを次の工程に供するこ
とができる。That is, a tweezer (not shown) on which a wafer to be processed is placed is indicated by an arrow 13 shown in FIG.
When the connecting portion 3 is moved in the direction of, the connecting portion 3 has a width wider than that of the tweezers and the tweezers can pass through the connecting portion 3 as described above, so that the tweezers enter the substrate holder 1. . The wafer 4 on the tweezer is the substrate holder 1
When the tweezers reach a position almost concentric with, the tweezers stop, and the tweezers are lowered at that position. In this way, the edge of the wafer 4 is supported by the supporting portion 2 which is a high portion of the substrate holder 1 and placed on the substrate holder 1, and the wafer 4 is separated from the tweezers. In this state, if the tweezers are moved in the direction opposite to the arrow 13, the wafer 4
Remain on the support 2 and the tweezers can be used in the next step.
【００１４】基板ホルダ１の支持部２上からウエーハ４
を取り出す場合は、まず、ツイーザを前記矢印１３の方
向に動かして、基板ホルダ１内に入れた後、ツイーザを
上昇させる。このようにすれば、ウエーハ４は支持部２
の上からツイーザの上に移るから、その状態で、ツイー
ザを前記矢印１３とは逆の方向に動かして、基板ホルダ
１の外部へ引き出せば、ウエーハ４はツイーザと共に基
板ホルダ１の外部に移される。From the supporting portion 2 of the substrate holder 1 to the wafer 4
In the case of taking out, the tweezers are first moved in the direction of the arrow 13 to be put in the substrate holder 1, and then the tweezers are raised. By doing so, the wafer 4 is supported by the supporting portion 2
Since it moves from above to the tweezers, in that state, if the tweezers are moved in the direction opposite to the arrow 13 and pulled out to the outside of the substrate holder 1, the wafer 4 is moved to the outside of the substrate holder 1 together with the tweezers. .
【００１５】このように、その上にウエーハ４を載せる
支持部２と、ウエーハ移載機のツイーザが通過し得る寸
法を持った凹部である接続部３を有する円環状の基板ホ
ルダ１を用いることにより、基板ホルダ１上へのウエー
ハ４の載置および基板ホルダ１上からのウエーハ４の取
り出しを、極めて容易に行うことが可能になった。As described above, using the annular substrate holder 1 having the supporting portion 2 on which the wafer 4 is placed and the connecting portion 3 which is a concave portion having a size through which the tweezers of the wafer transfer machine can pass. This makes it possible to mount the wafer 4 on the substrate holder 1 and take out the wafer 4 from the substrate holder 1 very easily.
【００１６】図１（ｂ）における端部１４を拡大して図
２に示した。図２に示したように、前記支持部２のウエ
ーハ４との接触面には、ウエーハ中心に向かうように、
テーパや曲面を設けることができる。このようにすれ
ば、ウエーハ４の端部が前記接触面と接触するから、基
板ホルダ１の鋭角な部分がウエーハ４と接触することは
なく、スクラッチが発生する恐れはない。さらに、基板
ホルダ１の表面粗さを小さくすることによって、基板ホ
ルダ１の表面のミクロな突起物は極度に減少し、ウエー
ハ表面におけるスクラッチの発生は防止されて、スクラ
ッチに起因するスリップも抑制される。基板ホルダ１の
表面粗さは小さいほど好ましいが、従来の約１／５から
１／１０程度（Ｒａ０．５〜０．１μｍ）とすれば、十
分に好ましい結果が得られる。The end portion 14 in FIG. 1 (b) is enlarged and shown in FIG. As shown in FIG. 2, on the contact surface of the support portion 2 with the wafer 4, the surface of the support portion 2 is directed toward the center of the wafer.
A taper or a curved surface can be provided. In this way, since the end portion of the wafer 4 comes into contact with the contact surface, the acute-angled portion of the substrate holder 1 does not come into contact with the wafer 4 and scratches do not occur. Further, by reducing the surface roughness of the substrate holder 1, the microscopic protrusions on the surface of the substrate holder 1 are extremely reduced, the occurrence of scratches on the wafer surface is prevented, and the slip caused by scratches is suppressed. It The smaller the surface roughness of the substrate holder 1, the more preferable it is. However, if it is about 1/5 to 1/10 of the conventional one (Ra 0.5 to 0.1 μm), a sufficiently preferable result can be obtained.
【００１７】複数の前記基板ホルダを、所定の間隔を介
して表面と裏面を対向させて積層するようボートの支柱
に支持し、前記被処理基板を前記基板ホルダ上にそれぞ
れ載置した後、前記処理室に収容して、前記被処理基板
に所望の処理が行われる。このようにすることによっ
て、基板を支持している基板ホルダが支柱に直接保持さ
れるので、ボートの製作は簡略化され、容易になる。前
記支柱に溝を設けて、前記基板ホルダをこの溝に挿入す
るようにすれば、基板ホルダは極めて容易に支柱に支持
される。A plurality of the substrate holders are supported on a column of a boat so that the front surface and the back surface face each other with a predetermined gap therebetween, and the substrates to be processed are placed on the substrate holders, respectively. The substrate to be processed is housed in the processing chamber and desired processing is performed on the substrate. By doing so, the substrate holder supporting the substrate is directly held by the column, so that the boat is simplified and facilitated. If a groove is provided in the pillar and the substrate holder is inserted into the groove, the substrate holder can be very easily supported by the pillar.
【００１８】前記基板ホルダおよび前記支柱としてはＳ
ｉＣ、単結晶シリコンまたはポリシリコンを用いて形成
することができ、前記支柱に形成された前記溝に基板ホ
ルダを抜き差し可能に配置される。本発明において用い
られる円環状の基板ホルダ１は、図１から明らかなよう
に、支持部２と接続部３のみからなる、一体化された極
めて簡単な構造を有しているので、ＳｉＣ、単結晶シリ
コンまたはポリシリコンを用いても容易に形成できる。
これらＳｉＣ、単結晶シリコンおよびポリシリコンは、
耐熱性および耐薬品性が極めて高く、１，２００〜１，
３００℃でも変形しないというすぐれた性質を有してお
り、ホルダやボートの材料として好ましいが、その反
面、溶接加工が困難であるという問題があるため、複雑
な形状のものは製作が困難である。The substrate holder and the column are S
It can be formed using iC, single crystal silicon, or polysilicon, and is arranged such that the substrate holder can be inserted into and removed from the groove formed in the pillar. As is clear from FIG. 1, the annular substrate holder 1 used in the present invention has an integrated and extremely simple structure composed of only the supporting portion 2 and the connecting portion 3. It can be easily formed by using crystalline silicon or polysilicon.
These SiC, single crystal silicon and polysilicon are
Extremely high heat resistance and chemical resistance, 1,200-1,
It has excellent properties that it does not deform even at 300 ° C and is preferable as a material for holders and boats, but on the other hand, there is a problem that welding processing is difficult, so that it is difficult to manufacture a complicated shape. .
【００１９】しかし、前記のように、本発明において用
いられる円環状の基板ホルダ１の形状は極めてシンプル
であるため、ＳｉＣ、単結晶シリコン、またはポリシリ
コンによって形成し、ボートの支柱に形成された溝と嵌
合させて、基板ホルダ１を溝によって保持することは容
易である。これらの材料を比較すると、ＳｉＣが単結晶
およびポリシリコンより耐熱性および耐薬品性がすぐれ
ており、酸化に対しても充分安定なので、基板ホルダや
支柱の材質としてＳｉＣが最も好ましい。However, as described above, since the annular substrate holder 1 used in the present invention has an extremely simple shape, it is formed of SiC, single crystal silicon, or polysilicon, and is formed on the support of the boat. It is easy to fit the groove into the groove and hold the substrate holder 1 by the groove. Comparing these materials, SiC has the better heat resistance and chemical resistance than single crystal and polysilicon, and is sufficiently stable against oxidation. Therefore, SiC is most preferable as the material for the substrate holder and the support.
【００２０】従来、基板ホルダを接続可能なように二つ
に分割して、一方を支柱に熔着させ、その上にウエーハ
を置いた後、他方を前記一方に接続させることによっ
て、基板ホルダ上にウエーハを載置する方法が提案され
ている。しかし、ＳｉＣは融点が極めて高いため、この
ような基板ホルダをＳｉＣから形成すると、前記基板ホ
ルダの一方を支柱の所定の位置に、正確にに熔着させる
ことは困難であり、ＳｉＣによって基板ホルダを構成す
るのは困難である。また、熔着ではなく、溝への差し込
みによって基板ホルダを保持すると、基板ホルダが二分
割されているために脱落し易く、しかも、前記基板ホル
ダの一方を左右対称に差し込むことは困難である。しか
し、本発明における基板ホルダ１においては、高い部分
である支持部２と凹部である接続部３は一体化されて形
成され、２分割されていないので、基板ホルダを前記溝
と嵌合させて支持柱に保持することは極めて容易であ
る。Conventionally, a substrate holder is divided into two parts so that they can be connected to each other, one of them is welded to a support, a wafer is placed on the support, and the other is connected to the one. A method of mounting a wafer on the wafer has been proposed. However, since SiC has an extremely high melting point, if such a substrate holder is made of SiC, it is difficult to accurately weld one of the substrate holders to a predetermined position of the support pillar, and the substrate holder is made of SiC. Is difficult to construct. Further, when the substrate holder is held not by welding but by being inserted into a groove, the substrate holder is divided into two parts, so that the substrate holder is easily dropped off, and it is difficult to insert one of the substrate holders symmetrically. However, in the substrate holder 1 according to the present invention, the supporting portion 2 which is a high portion and the connecting portion 3 which is a concave portion are integrally formed and are not divided into two, so that the substrate holder is fitted into the groove. It is extremely easy to hold it on the support column.
【００２１】前記支持部２の端部と接して形成された凹
部である接続部３は、基板移載器のツイーザが、出入し
得る大きさを有している。そのため、処理すべきウエハ
がその上に戴置されたツイーザは、接続部３を容易に出
入りすることができ、基板ホルダ１への処理すべきウエ
ハの出し入れは極めて容易である。The connecting portion 3, which is a concave portion formed in contact with the end portion of the supporting portion 2, has such a size that the tweezers of the substrate transfer device can move in and out. Therefore, the tweezers on which the wafers to be processed are placed can easily move in and out the connecting portion 3, and the wafers to be processed in and out of the substrate holder 1 are very easy.
【００２２】前記基板ホルダは、一つ若しくは二つの前
記接続部を有することができる。接続部の数が２の場合
は、例えば図５に示した位置決め部８、８´を有するツ
イーザ６を、所定の位置に停止させて、支持部２上への
ウエハの戴置が行われる。また、接続部の数が１の場合
は、このような位置決め部８´を一つ有しているツイー
ザ用いることができる。図３および図１０に、接続部３
の数がそれぞれ２および１である基板ホルダ１を示し
た。The substrate holder may have one or two connecting portions. When the number of connecting portions is two, for example, the tweezers 6 having the positioning portions 8 and 8 ′ shown in FIG. 5 are stopped at a predetermined position, and the wafer is placed on the supporting portion 2. When the number of connecting portions is 1, a tweezer having one such positioning portion 8'can be used. 3 and 10, the connecting portion 3
Substrate holder 1 is shown in which the numbers are 2 and 1, respectively.
【００２３】[0023]
【発明の実施の形態】実施例１
図１および図３を用いて本発明の一実施例を説明する。
図３において、図３（ａ）は本発明に用いる基板ホルダ
の一例を示す平面図、図３（ｂ）は正面図、図３（ｃ）
は図３（ｂ）におけるＤ部を示した図、図３（ｄ）は図
３（ａ）におけるＡ−Ａ断面における上端部の断面形状
を示した図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1 An embodiment of the present invention will be described with reference to FIGS.
3, FIG. 3 (a) is a plan view showing an example of the substrate holder used in the present invention, FIG. 3 (b) is a front view, and FIG. 3 (c).
3D is a diagram showing a portion D in FIG. 3B, and FIG. 3D is a diagram showing a cross-sectional shape of an upper end portion in a cross section AA in FIG. 3A.
【００２４】図３（ａ）に示したように、本発明におい
てウエーハ４を保持するための基板ホルダ１は円環状で
あり、表面が高い部分（厚い部分）である支持部２と、
当該支持部２の表面より表面が低い凹部（薄い部分）で
ある接続部３からなっている。前記支持部２の上には処
理すべきウエーハ４が置かれ、ウエーハ４の縁部が支持
部２によって支持される。接続部３は、ウエーハ移載機
のツイーザ（図示されていない）を抜き差しするために
設けられたもので、前記ツイーザの幅より大きな幅と、
接続部３内にツイーザを挿入し、かつ、挿入されたツイ
ーザを下降させることができる深さを有している。前記
基板ホルダ１は、図１に示したように、ボートの有する
ボート支柱５に形成された段部に挿入されて、ボート支
柱５に支持される。As shown in FIG. 3A, the substrate holder 1 for holding the wafer 4 in the present invention has an annular shape, and the support portion 2 having a high surface portion (thick portion),
The connection portion 3 is a concave portion (thin portion) whose surface is lower than the surface of the support portion 2. The wafer 4 to be processed is placed on the support portion 2, and the edge portion of the wafer 4 is supported by the support portion 2. The connecting portion 3 is provided to insert and remove the tweezers (not shown) of the wafer transfer machine, and has a width larger than the width of the tweezers.
The depth is such that a tweezer can be inserted into the connection part 3 and the inserted tweezer can be lowered. As shown in FIG. 1, the substrate holder 1 is inserted into a step formed on a boat support column 5 of the boat and supported by the boat support column 5.
【００２５】本発明においては、ボート支柱に設けられ
た極めて小面積の段部によって、ウエーハを直接保持し
ていた従来技術とは異なり、長い円弧状の、表面が高い
部分である支持部２の上にウエーハ４が保持される。そ
のため、前記従来技術の場合にくらべて、基板ホルダ１
とウエーハ４の接触面積がはるかに大きく、熱とウエー
ハの自重によって生ずる応力は効果的に防止され、スリ
ップの発生ははるかに少ない。In the present invention, unlike the prior art in which the wafer is directly held by the step portion having an extremely small area provided on the boat support, the support portion 2 which is a long arc-shaped portion having a high surface is formed. The wafer 4 is held on the top. Therefore, as compared with the case of the conventional technique, the substrate holder 1
The contact area between the wafer 4 and the wafer 4 is much larger, the stress caused by the heat and the weight of the wafer is effectively prevented, and the occurrence of slip is much less.
【００２６】また、本発明に用いられる基板ホルダ１
は、ツイーザを出入りさせるための接続部３を有してい
るため、前記のように、基板ホルダ１上へのウエーハ４
の装着および基板ホルダ１上からのウエーハ４の脱離
は、極めて容易である。Further, the substrate holder 1 used in the present invention
Has a connecting portion 3 for allowing the tweezers to move in and out, and therefore, as described above, the wafer 4 on the substrate holder 1 is
It is extremely easy to mount and detach the wafer 4 from the substrate holder 1.
【００２７】本発明において、基板ホルダ１としては種
々な寸法のものを使用することができるが、本実施例で
は下記寸法の円環状の基板ホルダ１を用いた。すなわ
ち、図３（ａ）に示したように、基板ホルダ１の支持部
２の外径ｒ１は３０８ｍｍ、内径ｒ２は２８０ｍｍ、二
つの支持部２は垂直軸に対して互いに対称な位置に配置
されており、これら二つの支持部２の中心点に対する角
度はそれぞれ１２６°（水平軸に対して上下対称にそれ
ぞれの角度αは６３°）である。基板ホルダ１の外周部
分のうち、ボート支柱５に接する部分（図１の場合は４
ケ所）には、それぞれ長さｗ３が５５．３ｍｍの直線部
分を形成した。そのため両直線部間の距離は３０３ｍｍ
となり、前記直径ｒ１よりわずかに小さい。この直線部
分の下端部間の距離ｒ３は２９４ｍｍであり、この直線
部分によって、基板ホルダ１のボート支柱５への装着
を、極めて確実に行うことができた。なお、前記ボート
支柱５に形成された段部（溝）内に基板ホルダ１を挿入
して、前記ボート支柱５に基板ホルダ１を接続するた
め、基板ホルダ１の支持部２の外縁部は、図２に示した
ように薄くされている。なお、接続部３の内径は前記支
持部２と同じ２８０ｍｍとした。In the present invention, various sizes can be used as the substrate holder 1. In this embodiment, the annular substrate holder 1 having the following size was used. That is, as shown in FIG. 3A, the outer diameter r 1 of the supporting portion 2 of the substrate holder 1 is 308 mm, the inner diameter r 2 is 280 mm, and the two supporting portions 2 are symmetrical with respect to the vertical axis. The two support portions 2 are arranged at an angle of 126 ° with respect to the center point of each of the two support portions 2 (each angle α is 63 ° vertically symmetrical with respect to the horizontal axis). Of the outer peripheral portion of the substrate holder 1, the portion in contact with the boat column 5 (in the case of FIG.
In the place), linear portions each having a length w 3 of 55.3 mm were formed. Therefore, the distance between both straight lines is 303mm
And is slightly smaller than the diameter r 1 . The distance r 3 between the lower ends of the straight line portions was 294 mm, and the straight line portions were able to attach the substrate holder 1 to the boat support column 5 very reliably. Since the substrate holder 1 is inserted into the step (groove) formed in the boat support column 5 and the substrate holder 1 is connected to the boat support column 5, the outer edge portion of the support portion 2 of the substrate holder 1 is It is thin as shown in FIG. The inner diameter of the connecting portion 3 was 280 mm, which was the same as that of the supporting portion 2.
【００２８】図３（ｂ）に示したように、前記支持部２
の厚さｔ１は８ｍｍ、接続部３の厚さｔ２は２ｍｍとし
て、接続部３の深さを６ｍｍとした。なお、図３（ｃ）
に示したように、支持部２に接する部分の近傍における
接続部３の厚さｔ３は３ｍｍとした。As shown in FIG. 3B, the supporting portion 2
Thickness t 1 is 8 mm, the thickness t 2 is 2mm connection portion 3, the depth of the connection part 3 was 6 mm. Note that FIG. 3 (c)
As shown in, the thickness t 3 of the connecting portion 3 near the portion in contact with the supporting portion 2 was 3 mm.
【００２９】接続部３の横幅ｗ１はほぼ１２７ｍｍとし
た。前記厚さが２ｍｍの部分の幅ｗ ２は１２０ｍｍと
し、この部分をツーザが出入りするようにした。ツイー
ザの幅は１０５ｍｍ、厚さ２ｍｍ程度であるから、前記
深さが６ｍｍ（厚さ２ｍｍ）の部分上を支障なく出入さ
せることができた。さらに、接続部３の上でツイーザを
上下に動かし、ツイーザ上のウエーハ４を支持部２の上
に残したり、支持部２上のウエーハ４をツイーザ上に移
すことも容易であった。基板ホルダ１の材質としてはＳ
ｉＣを使用し、さらにＣＶＤによってＳｉＣを表面上に
厚さ約６０μｍ堆積させた。また、基板ホルダ１の各部
の表面の平坦度は、±０．０５ｍｍ程度とした。前記基
板ホルダ１の高い部分がウエーハ４と接する部分は、図
２（ａ）、（ｂ）に示したように、曲面または傾斜面と
した。Width w of the connecting portion 31Is approximately 127 mm
It was The width w of the portion having the thickness of 2 mm TwoIs 120 mm
Then, let's enter and leave this part. Twee
Since the width of the z is about 105 mm and the thickness is about 2 mm,
You can enter and exit on a part with a depth of 6 mm (thickness 2 mm) without any trouble.
I was able to make it. Furthermore, on the connection part 3, tweezers
Move it up and down to place the wafer 4 on the tweezer on the support 2.
Or leave the wafer 4 on the support 2 on the tweezers.
It was easy to do. The material of the substrate holder 1 is S
iC is used, and further SiC is deposited on the surface by CVD.
It was deposited to a thickness of about 60 μm. In addition, each part of the substrate holder 1
The flatness of the surface was about ± 0.05 mm. The base
The part where the high part of the plate holder 1 contacts the wafer 4 is
As shown in 2 (a) and (b), a curved surface or an inclined surface
did.
【００３０】次に、このような基板ホルダ１上へのウエ
ーハ（被処理基板）４の装着およびその後に行われる熱
処理について、図４および図９を用いて説明する。ま
ず、図４（ａ）に示したように、カセットケース７内の
複数のウエーハ４を、移載機９のツイーザ６上に載せて
カセットケース７から引き出す。次に、図４（ｂ）に示
したように、移載機９を回転させてウエーハ４をボート
１５内の基板ホルダ１に向け、さらに図４（ｃ）に示し
たように、移載機９を直進させて、ボート１５内の前記
基板ホルダ１の上の位置にウエーハ４を移す。その後、
前記のように、ツイーザ６を下げて、ウエーハ４を基板
ホルダ１の支持部２の上に移した後、移載機９を前記直
進とは逆方向に移動させて、ツイーザ６をボート１５か
ら引き出して離す。この工程を繰り返すことによって、
多数のウエーハ４をカセットケース７からボート１５内
の基板ホルダ１の上に移し、所定の熱処理を行うことが
できた。Next, the mounting of the wafer (substrate to be processed) 4 on the substrate holder 1 and the heat treatment performed thereafter will be described with reference to FIGS. 4 and 9. First, as shown in FIG. 4A, the plurality of wafers 4 in the cassette case 7 are placed on the tweezers 6 of the transfer machine 9 and pulled out from the cassette case 7. Next, as shown in FIG. 4B, the transfer machine 9 is rotated to direct the wafer 4 toward the substrate holder 1 in the boat 15, and as shown in FIG. The wafer 4 is moved straight to the position above the substrate holder 1 in the boat 15. afterwards,
As described above, the tweezers 6 are lowered, the wafer 4 is moved onto the support portion 2 of the substrate holder 1, and then the transfer machine 9 is moved in the direction opposite to the straight traveling to move the tweezers 6 out of the boat 15. Pull out and release. By repeating this process,
It was possible to transfer a large number of wafers 4 from the cassette case 7 onto the substrate holder 1 in the boat 15 and perform a predetermined heat treatment.
【００３１】前記カセットケース７内から取り出された
ウエーハ４を、移載機９によってボート１５内に搬送し
た後、図９に示したように、ボート１５をガス反応管１
９内に移し、所定の熱処理を行った。ガス反応管１９
は、ガス反応管１９内の温度分布を向上させるための均
熱管１７内に配置されており、均熱管１７の外側には加
熱手段１６が配置されて、ガス反応管１９内に挿入され
たウエーハ４を所定の温度で処理する。前記ガス反応管
１９は、ガス供給部１８を有しており、ガス反応管１９
内を所定のガス雰囲気に保つ。After the wafer 4 taken out from the cassette case 7 is transferred into the boat 15 by the transfer machine 9, the boat 15 is moved to the gas reaction tube 1 as shown in FIG.
It moved to the inside of 9 and the predetermined heat processing was performed. Gas reaction tube 19
Is arranged in the soaking tube 17 for improving the temperature distribution in the gas reaction tube 19, and the heating means 16 is arranged outside the soaking tube 17 to insert the wafer into the gas reaction tube 19. 4 is treated at a given temperature. The gas reaction tube 19 includes a gas supply unit 18, and the gas reaction tube 19
The inside is kept in a prescribed gas atmosphere.
【００３２】熱処理終了後、前記ボート１５をガス反応
管１９から出し、さらに基板ホルダ１上からウエーハ４
を引き出して、次の処理工程に供した。基板ホルダ１上
からウエーハ４をカセットケース７に移すためには、前
記ウエーハ４を挿入する場合とは、逆の順で処理を行え
ばよいことはいうまでもない。After the heat treatment is completed, the boat 15 is taken out from the gas reaction tube 19, and the wafer 4 is placed on the substrate holder 1.
Was taken out and subjected to the next treatment step. Needless to say, in order to transfer the wafer 4 from the substrate holder 1 to the cassette case 7, the processing may be performed in the reverse order of the case where the wafer 4 is inserted.
【００３３】前記ウエーハ移載機９が有するツイーザ６
の一例を図５に示した。このツイーザ６は、ウエーハ４
の位置を規定するための二つの位置決め部（位置規制
部）８、８´を有しており、これら二つの位置決め部
８、８´の間にウエーハ４が置かれる。二つの位置決め
部８、８´はウエーハ４が置かれる部分より高くなって
おり、ウエーハ４は両位置決め部８、８´の間の低い部
分上に置かれる。さらに、一方の位置決め部８´の壁面
（ウエーハ４が置かれる部分との境界）は、図５に示し
たように円弧状になっているため、二つの位置決め部
８、８´の間の低い部分上にウエーハ４を置き、ツイー
ザ６上の所定の位置に載置するのは、極めて容易であ
る。Tweezers 6 of the wafer transfer machine 9
An example is shown in FIG. This tweezer 6 is a wafer 4
Has two positioning portions (position regulating portions) 8 and 8'for defining the position of the wafer 4. The wafer 4 is placed between these two positioning portions 8 and 8 '. The two positioning parts 8, 8'are higher than the part on which the wafer 4 is placed, and the wafer 4 is placed on the lower part between both the positioning parts 8, 8 '. Furthermore, since the wall surface of one of the positioning portions 8 '(the boundary with the portion on which the wafer 4 is placed) has an arc shape as shown in FIG. 5, the low distance between the two positioning portions 8 and 8'is provided. It is extremely easy to place the wafer 4 on the part and place it on the tweezer 6 at a predetermined position.
【００３４】本発明において形成されたボート１５の外
観の一例を図６に示した。多数の前記円環状の基板ホル
ダ１が、ボート支柱５に形成された多数の段部によって
それぞれ保持されている。これら多数の基板ホルダ１の
上に、前記説明したように、それぞれウエーハが置かれ
る。なお、図６において、符号１０、１１は、それぞれ
支柱５を固定するための天板および底板を表す。An example of the appearance of the boat 15 formed in the present invention is shown in FIG. A large number of the ring-shaped substrate holders 1 are respectively held by a large number of steps formed on the boat column 5. A wafer is placed on each of the large number of substrate holders 1 as described above. In FIG. 6, reference numerals 10 and 11 represent a top plate and a bottom plate for fixing the support column 5, respectively.
【００３５】本実施例に示した基板ホルダを用い、直径
３０ｃｍのシリコンウエーハについて、８００℃の熱処
理を支障なく行うことができた。Using the substrate holder shown in this example, a silicon wafer having a diameter of 30 cm could be heat-treated at 800 ° C. without any trouble.
【００３６】実施例２
次に、前記接続部３の数が１である基板ホルダの例につ
いて説明する。図３においては、前記のように、円環状
の基板ホルダ１に、ツイーザを出入りさせるための接続
部３を二つ設けた例を示したが、図１０に示したよう
に、接続部３を一つのみとすることもできる。したがっ
て、この場合は、図５に示したツイーザ６とは異なり、
位置決め部８´を一つ有しているツイーザを用いること
ができる。なお、図１０における各記号は、それぞれ図
３の場合と同じものを表す。Embodiment 2 Next, an example of a substrate holder in which the number of the connecting portions 3 is 1 will be described. Although FIG. 3 shows an example in which two connecting portions 3 for allowing the tweezers to move in and out are provided in the annular substrate holder 1 as described above, as shown in FIG. There can be only one. Therefore, in this case, unlike the tweezers 6 shown in FIG. 5,
A tweezer having one positioning portion 8'can be used. Note that each symbol in FIG. 10 represents the same as in FIG.
【００３７】本実施例においても、接続部３の数が２で
ある前記実施例１の場合と同様に、極めて好ましい結果
が得られた。Also in this embodiment, as in the case of Embodiment 1 in which the number of connecting portions 3 is 2, extremely preferable results were obtained.
【００３８】実施例３
本実施例は、位置決め部を有するツイーザを用いた例で
ある。本半導体製造装置は、被処理基板を処理する処理
室と、被処理基板を載置する環状の基板ホルダと、該基
板ホルダが支柱に配置されたボートと、被処理基板を載
置するツイーザであって、被処理基板の少なくとも外周
の２個所で位置ずれを規制する位置決め部を有するツイ
ーザと、前記基板ホルダには少なくとも前記ツイーザの
位置決め部に対応した位置に、前記ツイーザの幅よりも
広い幅の凹部である接続部を上面に有し、前記ツイーザ
に載置された被処理基板を前記基板ホルダへ、または前
記基板ホルダに載置された被処理基板を前記ツイーザへ
移し替える場合には、前記基板ホルダの凹部である接続
部に前記ツイーザが出入するよう動作させることが可能
な移載機とを具備していることを特徴としている。Embodiment 3 This embodiment is an example using a tweezer having a positioning portion. The semiconductor manufacturing apparatus includes a processing chamber for processing a substrate to be processed, an annular substrate holder on which the substrate to be processed is mounted, a boat in which the substrate holder is mounted on a column, and a tweezer for mounting the substrate to be processed. A tweezer having a positioning portion that regulates positional deviation at at least two positions on the outer periphery of the substrate to be processed, and a width wider than the width of the tweezer at a position corresponding to at least the positioning portion of the tweezer on the substrate holder. In the case of transferring the substrate to be processed placed on the tweezers to the substrate holder, or the substrate to be processed placed on the substrate holder to the tweezers, in the case of having a connection part which is a concave part on the upper surface, It is characterized by further comprising: a transfer machine that can be operated so that the tweezers move in and out of a connection portion that is a concave portion of the substrate holder.
【００３９】このような構成とすることによって、ツイ
ーザの出し入れや被処理基板の処理における、トラブル
の減少や歩留まりの向上など、多くの好ましい効果が得
られた。With this structure, many preferable effects such as reduction of troubles and improvement of yield can be obtained in taking in and out the tweezers and processing the substrate to be processed.
【００４０】[0040]
【発明の効果】以上の説明から明らかなように、本発明
によれば、円環状の基板ホルダの、表面が高い円弧状の
支持部の上にウエーハが置かれて、所望熱処理が行われ
る。そのため、支持柱に設けた溝によってウエーハを直
接支持した従来の場合よりも、高温度の熱処理とウエー
ハ自体の重量によって生ずる熱応力は大幅に緩和されて
スリップの発生は減少し、また、ウエーハと基板ホルダ
の接触によるパーテイクルやスクラッチの発生も著しく
減少して、歩留まりが向上する。As is apparent from the above description, according to the present invention, the wafer is placed on the arcuate support portion having a high surface of the annular substrate holder, and the desired heat treatment is performed. Therefore, compared with the conventional case in which the wafer is directly supported by the groove provided in the supporting column, the thermal stress generated by the high temperature heat treatment and the weight of the wafer itself is remarkably alleviated, and the occurrence of slip is reduced. The generation of particles and scratches due to the contact of the substrate holder is also significantly reduced, and the yield is improved.
【００４１】また、本発明においては、円環状の基板ホ
ルダに、ウエーハがその上に置かれる高い部分である支
持部と、この支持部に隣接して移載機のツイーザが出入
りできる凹部である接続部を設けられており、この接続
部を介してツイーザの出入れが行われる。それによっ
て、基板ホルダ上へのウエーハの載置および基板ホルダ
上からのウエーハの取り出しを、極めて容易に行うこと
ができる。Further, in the present invention, the annular substrate holder is provided with a supporting portion which is a high portion on which the wafer is placed, and a concave portion which is adjacent to the supporting portion and into which the tweezers of the transfer machine can move in and out. A connection part is provided, and the tweezers are put in and taken out through this connection part. As a result, the placement of the wafer on the substrate holder and the removal of the wafer from the substrate holder can be performed very easily.
【００４２】しかも、円環状の基板ホルダの前記高い部
分である支持部と凹部である接続部は、一体化して形成
されており、構造が極めて簡単なので、耐熱性と耐薬品
性がすぐれたＳｉＣを材質に用いて容易に形成すること
ができ、ボート支持柱の段部に極めて容易かつ確実に嵌
合して保持することができる。Moreover, since the supporting portion, which is the higher portion of the annular substrate holder, and the connecting portion, which is the concave portion, are integrally formed and the structure is extremely simple, SiC having excellent heat resistance and chemical resistance is used. Can be easily formed by using as a material, and can be extremely easily and surely fitted and held on the stepped portion of the boat support column.
【図１】本発明に用いられる円環状の基板ホルダを説明
するための図。FIG. 1 is a diagram for explaining an annular substrate holder used in the present invention.
【図２】基板ホルダの端部の構造を示す断面図。FIG. 2 is a sectional view showing a structure of an end portion of a substrate holder.
【図３】接続部の数が２である円環状基板ホルダの構造
を示す図。FIG. 3 is a diagram showing a structure of an annular substrate holder having two connecting portions.
【図４】カセット上へのウエーハの移送を説明するため
の図。FIG. 4 is a view for explaining the transfer of the wafer onto the cassette.
【図５】ツイーザの一例を示す図。FIG. 5 is a diagram showing an example of a tweezers.
【図６】本発明におけるボートの一例を示す図。FIG. 6 is a diagram showing an example of a boat according to the present invention.
【図７】従来のボートの構造を説明するための図。FIG. 7 is a view for explaining the structure of a conventional boat.
【図８】従来のウエーハ支持を説明するための図。FIG. 8 is a view for explaining conventional wafer support.
【図９】本発明を用いた熱処理装置を説明するための
図。FIG. 9 is a diagram for explaining a heat treatment apparatus using the present invention.
【図１０】接続部の数が１である円環状基板ホルダの例
を示す図。FIG. 10 is a diagram showing an example of an annular substrate holder having one connecting portion.
１…基板ホルダ、２…支持部、３…接続部、４…ウエー
ハ、５…ボート支柱、６…ツイーザ、７…カセットケー
ス、８、８´…位置決め部、９…移載機、１０…天板、
１１…底板、１２…支柱、１３…矢印、１４…端部、１
５…ボート、１６…加熱手段、１７…均熱管、１８…ガ
ス供給部、１９…ガス反応管、ｒ１…支持部の外径、ｒ
２…基板ホルダの内径、ｒ３…直線部分の下端部間の距
離、ｗ１…凹部の幅、ｗ２…厚さ２ｍｍの接続部の幅、
ｗ３…直線部分の長さ、ｔ１…支持部の厚さ、ｔ２…厚
さ２ｍｍの接続部の深さ、ｔ３…厚さ３ｍｍの接続部の
深さ。1 ... Substrate holder, 2 ... Support part, 3 ... Connection part, 4 ... Wafer, 5 ... Boat support, 6 ... Tweezers, 7 ... Cassette case, 8, 8 '... Positioning part, 9 ... Transfer machine, 10 ... Top Board,
11 ... bottom plate, 12 ... posts, 13 ... arrows, 14 ... ends, 1
5 ... boat, 16 ... heating means, 17 ... liner tube, 18 ... gas supply unit, 19 ... gas reaction tube, the outer diameter of r 1 ... support portion, r
2 ... inner diameter of the substrate holder, the distance between the lower ends of the r 3 ... straight portion, w 1 ... recess of width, w 2 ... thickness 2mm connection portion of the width,
w 3 ... Length of straight line portion, t 1 ... Thickness of supporting portion, t 2 ... Depth of connecting portion having thickness of 2 mm, t 3 ... Depth of connecting portion having thickness of 3 mm.
Claims (3)
と、当該基板ホルダ上に載置された前記被処理基板を処
理する基板処理室を具備し、前記基板ホルダは、前記被
処理基板の縁部をその上に支持する支持部と、当該支持
部が互いに離間する部分に当該支持部の端部に接して設
けられた前記支持部の表面より低い表面を有する接続部
を有し、前記支持部上に載置された前記被処理基板を、
前記基板処理室に収容して所定の処理を行うことを特徴
とする半導体製造装置。1. An annular substrate holder for mounting a substrate to be processed, and a substrate processing chamber for processing the substrate to be processed mounted on the substrate holder, wherein the substrate holder is the substrate to be processed. A support portion for supporting the edge portion of the substrate thereon; and a connecting portion having a surface lower than a surface of the support portion provided in contact with an end portion of the support portion in a portion where the support portion is separated from each other. , The substrate to be processed placed on the support portion,
A semiconductor manufacturing apparatus, which is housed in the substrate processing chamber to perform a predetermined process.
して表面と裏面を対向させて積層するようボートの支柱
に支持することを特徴とする請求項１に記載の半導体製
造装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein a plurality of the substrate holders are supported on a support of a boat so that the front surface and the back surface are opposed to each other with a predetermined gap therebetween.
ホルダに出入させるための基板移載機のツイーザを出入
し得る大きさを有することを特徴とする請求項１若しく
は２に記載の半導体製造装置。3. The connection unit according to claim 1, wherein the connecting portion has a size that allows a tweezer of a substrate transfer machine for moving the substrate to be processed into and out of the substrate holder. Semiconductor manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003008037A JP4590162B2 (en) | 2002-01-17 | 2003-01-16 | Substrate holder, laminated boat, semiconductor manufacturing apparatus and semiconductor device manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002-8923 | 2002-01-17 | ||
| JP2002008923 | 2002-01-17 | ||
| JP2003008037A JP4590162B2 (en) | 2002-01-17 | 2003-01-16 | Substrate holder, laminated boat, semiconductor manufacturing apparatus and semiconductor device manufacturing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005290269A Division JP2006108677A (en) | 2002-01-17 | 2005-10-03 | Semiconductor manufacturing machine |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003282683A true JP2003282683A (en) | 2003-10-03 |
| JP2003282683A5 JP2003282683A5 (en) | 2006-03-02 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009170933A (en) * | 2002-01-17 | 2009-07-30 | Hitachi Kokusai Electric Inc | Substrate holder, stack boat, semiconductor fabricating device, and method of fabricating semiconductor device |
| JP2010062446A (en) * | 2008-09-05 | 2010-03-18 | Tokyo Electron Ltd | Vertical heat treatment apparatus and substrate supporting tool |
-
2003
- 2003-01-16 JP JP2003008037A patent/JP4590162B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009170933A (en) * | 2002-01-17 | 2009-07-30 | Hitachi Kokusai Electric Inc | Substrate holder, stack boat, semiconductor fabricating device, and method of fabricating semiconductor device |
| JP2010062446A (en) * | 2008-09-05 | 2010-03-18 | Tokyo Electron Ltd | Vertical heat treatment apparatus and substrate supporting tool |
| US8940096B2 (en) | 2008-09-05 | 2015-01-27 | Tokyo Electron Limited | Vertical thermal processing apparatus and substrate supporter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4590162B2 (en) | 2010-12-01 |
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