JP2003268478A - Al-SiC COMPOSITE - Google Patents
Al-SiC COMPOSITEInfo
- Publication number
- JP2003268478A JP2003268478A JP2002063441A JP2002063441A JP2003268478A JP 2003268478 A JP2003268478 A JP 2003268478A JP 2002063441 A JP2002063441 A JP 2002063441A JP 2002063441 A JP2002063441 A JP 2002063441A JP 2003268478 A JP2003268478 A JP 2003268478A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- composite
- based composite
- silicon carbide
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、アルミニウムを主
成分とする金属（以下、アルミニウムと称す場合あり）
に炭化ケイ素粒子を分散させてなるＡｌ−ＳｉＣ系複合
体に関する。本発明のＡｌ−ＳｉＣ系複合体は、低熱膨
張、高熱伝導性を有し、放熱基板、ヒートシンク、パッ
ケージなど半導体装置に用いられる放熱部品に好適なも
のである。TECHNICAL FIELD The present invention relates to a metal containing aluminum as a main component (hereinafter sometimes referred to as aluminum).
The present invention relates to an Al-SiC-based composite body in which silicon carbide particles are dispersed. The Al-SiC composite of the present invention has low thermal expansion and high thermal conductivity, and is suitable for a heat dissipation component such as a heat dissipation board, a heat sink, a package used in a semiconductor device.
【０００２】[0002]
【従来の技術】近年、産業機器の分野では、半導体スイ
ッチングデバイスを用いて大きな電力を最適な電力に効
率よく交換制御する大電力モジュール装置の開発が進ん
でいる。例えば、電動車輌用インバータとして高電圧、
大電流動作が可能なＩＧＢＴモジュールがある。このよ
うな大電力モジュール化に伴い、半導体チップから発生
する熱も増大している。半導体チップは熱に弱く、発熱
が大きくなれば半導体回路の誤動作や破壊を招くことに
なる。そこで、半導体チップなど電子部品を搭載するた
めの回路基板の裏面にヒートシンクなどの放熱部品を設
けて、放熱部品を介して半導体チップから発生した熱を
外部に発散させ、半導体回路の動作を安定にすることが
行われている。電子部品を搭載するための回路基板とし
ては、窒化ケイ素（Ｓｉ3Ｎ4）、窒化アルミニウム（Ａ
ｌＮ）、酸化アルミニウム（Ａｌ2Ｏ3）などのセラミッ
クス基板が主に用いられている。2. Description of the Related Art In recent years, in the field of industrial equipment, development of a high power module device for efficiently exchanging and controlling a large power to an optimum power by using a semiconductor switching device has been advanced. For example, high voltage as an inverter for electric vehicles,
There is an IGBT module capable of high current operation. The heat generated from the semiconductor chip is also increasing in accordance with such a high power module. The semiconductor chip is vulnerable to heat, and if the heat generation increases, malfunction or destruction of the semiconductor circuit will be caused. Therefore, a heat dissipation component such as a heat sink is provided on the back surface of a circuit board for mounting electronic components such as semiconductor chips, and the heat generated from the semiconductor chip is radiated to the outside through the heat dissipation component to stabilize the operation of the semiconductor circuit. Is being done. Circuit boards for mounting electronic components include silicon nitride (Si 3 N 4 ) and aluminum nitride (A
Ceramic substrates such as 1N) and aluminum oxide (Al 2 O 3 ) are mainly used.
【０００３】従来の放熱部品用材料として、銅（Ｃ
ｕ）、モリブデン（Ｍｏ）、タングステン（Ｗ）などが
ある。モリブデンやタングステンからなる放熱部品は高
価であり、また金属の比重が大きいため放熱部品の重量
が重くなり、放熱部品の軽量化が望まれる用途には好ま
しくない。As a conventional material for heat dissipation parts, copper (C
u), molybdenum (Mo), tungsten (W), and the like. The heat dissipation component made of molybdenum or tungsten is expensive, and since the specific gravity of metal is large, the weight of the heat dissipation component becomes heavy, which is not preferable for applications in which weight reduction of the heat dissipation component is desired.
【０００４】銅からなる放熱部品は、放熱部品と接合さ
れるセラミックス基板との熱膨張係数の差が大きいの
で、放熱部品とセラミックス基板との加熱接合時や、使
用中の熱サイクルにより、はんだ層の破壊、熱流路の遮
断、セラミックス基板の割れを生じやすい。つまり、放
熱部品とセラミックス基板とは、はんだ付けされてお
り、はんだの融点以上に加熱した後、室温まで冷却され
る。その際、はんだの凝固点で互いに固定され、その後
は固定されたまま放熱部品とセラミックス基板がそれぞ
れ固有の熱膨張係数に従って収縮し、互いの接合部に熱
応力および熱歪みが残留するとともに反りなどの変形を
生じる。そして、モジュール装置の使用時に熱ストレス
が繰り返し与えられ、残留熱応力および熱歪みに重畳さ
れると、はんだ層の疲労破壊による熱流路の遮断と、機
械的に脆い性質を持つセラミックス基板の割れを生じ
る。Since the heat dissipation component made of copper has a large difference in coefficient of thermal expansion between the heat dissipation component and the ceramics substrate to be joined, the solder layer may be heated by the heat dissipation component and the ceramics substrate or due to a thermal cycle during use. Is easily broken, the heat flow path is blocked, and the ceramic substrate is cracked. That is, the heat dissipation component and the ceramic substrate are soldered, and after being heated to the melting point of the solder or higher, they are cooled to room temperature. At that time, they are fixed to each other at the solidification point of the solder, and then the heat-dissipating component and the ceramic substrate contract according to their respective thermal expansion coefficients while being fixed, and thermal stress and thermal strain remain at the joints of each other and warp etc. Cause deformation. When thermal stress is repeatedly applied during use of the module device and is superimposed on residual thermal stress and thermal strain, the thermal flow path is blocked due to fatigue failure of the solder layer, and cracks in the ceramic substrate with mechanical brittleness occur. Occurs.
【０００５】銅などの従来材に替わる放熱部品用材料と
して、アルミニウム中に炭化ケイ素を分散させた低熱膨
張・高熱伝導特性を有するＡｌ−ＳｉＣ系複合体が注目
されている（特公平７−２６１７４号、特開昭６４−８
３６３４号公報等参照）。Ａｌ−ＳｉＣ系複合体は、粉
末冶金法、高圧鋳造法、真空鋳造法、溶融金属含浸法な
どにより製造される。Ａｌ−ＳｉＣ系複合体の熱膨張係
数をセラミックス基板の熱膨張係数に近づけようとする
と、熱膨張係数の低い炭化ケイ素の含有比率を上げるこ
とが必要である。しかしながら、粉末冶金法、高圧鋳造
法、真空鋳造法では、その製造法の特質上、炭化ケイ素
の含有量を４０体積％以上にすることが容易ではない。
また、ネットシェイプ成形することが難しく、大型の加
圧装置を必要とするため製造コストが高くなる。As a material for heat dissipation parts, which replaces conventional materials such as copper, an Al-SiC type composite having low thermal expansion and high thermal conductivity in which silicon carbide is dispersed in aluminum has been attracting attention (Japanese Patent Publication No. 7-216174). No. JP-A-64-8
(See Japanese Patent No. 3634). The Al-SiC composite is manufactured by a powder metallurgy method, a high pressure casting method, a vacuum casting method, a molten metal impregnation method or the like. In order to bring the thermal expansion coefficient of the Al-SiC composite close to that of the ceramic substrate, it is necessary to increase the content ratio of silicon carbide having a low thermal expansion coefficient. However, in the powder metallurgy method, the high-pressure casting method, and the vacuum casting method, it is not easy to set the content of silicon carbide to 40% by volume or more due to the characteristics of the manufacturing method.
Further, it is difficult to perform the net shape molding, and a large pressure device is required, which increases the manufacturing cost.
【０００６】一方、溶融金属含浸法は、主に炭化ケイ素
粉末あるいは炭化ケイ素繊維で形成された多孔体（プリ
フォーム）を用い、これを型内の空間に配置し、アルミ
ニウムのインゴットを接触させて、窒素雰囲気中で加圧
もしくは非加圧で加熱溶融したアルミニウムを型内の空
間に流し込むことによって、炭化ケイ素質多孔体に含浸
させた後、冷却して作製するものである。この製造方法
によれば、炭化ケイ素の含有量を２０〜９０体積％の範
囲で選択できる。また、炭化ケイ素質多孔体形状の自由
度が高く、複雑な形状の製品をネットシェイプ成形でき
る利点を有する。On the other hand, in the molten metal impregnation method, a porous body (preform) formed mainly of silicon carbide powder or silicon carbide fibers is used, and the porous body (preform) is placed in a space in a mold, and an aluminum ingot is brought into contact therewith. The silicon carbide-based porous body is impregnated by pouring aluminum heated and melted under pressure or non-pressure in a nitrogen atmosphere into the space in the mold, and then cooled to manufacture. According to this manufacturing method, the content of silicon carbide can be selected within the range of 20 to 90% by volume. In addition, there is an advantage that the shape of the silicon carbide based porous material has a high degree of freedom and that a product having a complicated shape can be net-shape molded.
【０００７】他の先行技術として、特開平１１−１１６
３６２号公報には、炭化ケイ素質多孔体にアルミニウム
を主成分とする金属を含浸してなる複合体であって、窒
素含有量が０．５〜１０重量％、酸素含有量が１重量％
以下、該複合体の熱伝導率が１７０Ｗ／（ｍ・Ｋ）以
上、室温の熱膨張係数が９×１０-6／Ｋ以下であるＡｌ
−ＳｉＣ系複合体が記載されている。これによれば、複
合体中の窒素および酸素の含有量を低く抑えることによ
り、複合体の高熱伝導率化を図れるものである。As another prior art, Japanese Patent Laid-Open No. 11-116
No. 362 discloses a composite body obtained by impregnating a silicon carbide-based porous body with a metal containing aluminum as a main component, and having a nitrogen content of 0.5 to 10% by weight and an oxygen content of 1% by weight.
Hereinafter, Al whose thermal conductivity of the composite is 170 W / (m · K) or more and whose thermal expansion coefficient at room temperature is 9 × 10 −6 / K or less
-SiC based composites are described. According to this, by suppressing the contents of nitrogen and oxygen in the composite to a low level, it is possible to increase the thermal conductivity of the composite.
【０００８】[0008]
【発明が解決しようとする課題】Ａｌ−ＳｉＣ系複合体
において、原料もしくはアルミニウム含浸の際に使用す
る治具から混入する鉄分は、少量であれば複合体の特性
に影響を及ぼさない。しかしながら、混入の仕方によっ
ては、Ａｌ−ＳｉＣ系複合体中に鉄が局部的に集中して
晶出することがある。鉄が集中して晶出すると、その部
分の変形能が劣化し、脆くなり強度を低下させるという
問題がある。In the Al-SiC type composite body, the iron content mixed from the raw material or the jig used for impregnating aluminum does not affect the characteristics of the composite body as long as it is small. However, iron may be locally concentrated and crystallized in the Al-SiC composite depending on the mixing method. If iron concentrates and crystallizes, there is a problem that the deformability of that portion deteriorates, becomes brittle, and the strength decreases.
【０００９】また、Ａｌ−ＳｉＣ系複合体をヒートシン
クなどの放熱部品として用いる場合、セラミックス基板
などと接合されて使われるため、複合体の反りが重要な
影響を与える。すなわち複合体の反りが大き過ぎると、
放熱部品とセラミックス基板との加熱接合時や、使用中
の熱サイクルにより、はんだ層の破壊、熱流路の遮断、
セラミックス基板の割れを生じやすいという問題があ
る。Further, when the Al--SiC composite is used as a heat dissipation component such as a heat sink, since it is used by being bonded to a ceramic substrate or the like, the warpage of the composite has an important effect. That is, if the warp of the composite is too large,
Destruction of the solder layer, blocking of the heat flow path, during heat bonding between the heat dissipation component and the ceramic substrate, or due to the heat cycle during use,
There is a problem that cracking of the ceramic substrate is likely to occur.
【００１０】先行技術の特開平１１−１１６３６２号公
報は、複合体中の窒素および酸素の含有量を低く抑える
ことにより、複合体の高熱伝導率化を図るものであり、
鉄の含有による不具合について開示されていない。Japanese Unexamined Patent Publication (Kokai) No. 11-116362, which is a prior art, aims to increase the thermal conductivity of a composite by suppressing the contents of nitrogen and oxygen in the composite to be low.
It does not disclose any problems caused by the inclusion of iron.
【００１１】本発明は、上記の事情に鑑みなされたもの
であって、熱膨張係数がセラミックス基板のそれに近
く、高い熱伝導率を有するとともに、強度を向上させた
Ａｌ−ＳｉＣ系複合体を提供することを目的とする。The present invention has been made in view of the above circumstances, and provides an Al-SiC based composite having a coefficient of thermal expansion close to that of a ceramic substrate, high thermal conductivity, and improved strength. The purpose is to do.
【００１２】[0012]
【課題を解決するための手段】本発明は、アルミニウム
を主成分とする金属中に炭化ケイ素粒子を分散させてな
るＡｌ−ＳｉＣ系複合体であって、該複合体中の鉄の含
有量が２重量％以下であることを特徴とする。DISCLOSURE OF THE INVENTION The present invention is an Al-SiC type composite body in which silicon carbide particles are dispersed in a metal containing aluminum as a main component, and the content of iron in the composite body is It is characterized by being 2% by weight or less.
【００１３】また、Ａｌ−ＳｉＣ系複合体の表面にアル
ミニウムを主成分とする金属からなる被覆層が形成され
ており、相対する最も面積の広い主面において、表裏の
被覆層の合計厚さが、表裏の被覆層を含むＡｌ−ＳｉＣ
系複合体の厚さに対して１５％以下であることを特徴と
する。In addition, a coating layer made of a metal containing aluminum as a main component is formed on the surface of the Al-SiC type composite, and the total thickness of the coating layers on the front and back sides is the same on the opposite main surface having the largest area. , Al-SiC including front and back coating layers
It is characterized by being 15% or less with respect to the thickness of the system composite.
【００１４】さらに、Ａｌ−ＳｉＣ系複合体の表面にア
ルミニウムを主成分とする金属からなる被覆層が形成さ
れており、相対する最も面積の広い主面において、表裏
の被覆層を除いたＡｌ−ＳｉＣ系複合体の表面より複合
体厚の１／３以下を占める部分の炭化ケイ素粒子の含有
量と、裏面より複合体厚の１／３以下を占める部分の炭
化ケイ素粒子の含有量との差が３体積％以下であること
を特徴とする。Further, a coating layer made of a metal containing aluminum as a main component is formed on the surface of the Al-SiC type composite, and on the opposite main surface having the largest area, the Al- layer excluding the front and back coating layers is formed. Difference between the content of silicon carbide particles in the portion occupying 1/3 or less of the composite thickness from the surface of the SiC-based composite and the content of silicon carbide particles in the portion occupying 1/3 or less of the composite thickness from the back surface Is 3% by volume or less.
【００１５】また、Ａｌ−ＳｉＣ系複合体中の酸素の含
有量が重量比で５００ｐｐｍ以下、窒素の含有量が１０
０ｐｐｍ以下であることを特徴とする。Further, the oxygen content in the Al-SiC composite is less than 500 ppm by weight, and the nitrogen content is 10 ppm.
It is characterized by being 0 ppm or less.
【００１６】また、本発明のＡｌ−ＳｉＣ系複合体は、
アルミニウムを主成分とする金属中に炭化ケイ素粒子を
３０体積％以上分散させてなり、主に炭化ケイ素からな
る多孔体にアルミニウムを主成分とする金属を加圧含浸
して形成することが好ましい。また、本発明のＡｌ−Ｓ
ｉＣ系複合体は、室温の熱膨張係数が４×１０-6〜２０
×１０-6／Ｋ、熱伝導率が１５０〜２８０Ｗ／（ｍ・
Ｋ）であることを特徴とする。The Al-SiC composite of the present invention is
It is preferable that 30 vol% or more of silicon carbide particles are dispersed in a metal containing aluminum as a main component, and a porous body mainly composed of silicon carbide is pressure-impregnated with a metal containing aluminum as a main component. In addition, the Al-S of the present invention
The iC-based composite has a thermal expansion coefficient of 4 × 10 −6 to 20 at room temperature.
× 10 −6 / K, thermal conductivity 150 to 280 W / (m ·
K).
【００１７】[0017]
【発明の実施の形態】Ａｌ−ＳｉＣ系複合体において、
鉄が局部的に集中して晶出すると、その部分の変形能が
劣化し、脆くなり強度が低下する。特に、Ａｌ−ＳｉＣ
系複合体の外表面にアルミニウムを主成分とする金属か
らなる被覆層（アルミニウム被覆層）を形成させた場
合、炭化ケイ素質多孔体にアルミニウムが含浸して形成
された本体部と、アルミニウム被覆層との境界部近傍に
鉄が集中して晶出しやすく境界の強さが低下する。これ
を防止するためには、Ａｌ−ＳｉＣ系複合体中の鉄の含
有量を２重量％以下にすることが必要である。さらに好
ましくは１重量％以下にする。BEST MODE FOR CARRYING OUT THE INVENTION In an Al-SiC composite,
If iron is locally concentrated and crystallized, the deformability of that portion deteriorates, and it becomes brittle and the strength decreases. In particular, Al-SiC
When a coating layer (aluminum coating layer) made of a metal containing aluminum as a main component is formed on the outer surface of the resin-based composite, a main body formed by impregnating a silicon carbide-based porous body with aluminum and an aluminum coating layer Iron concentrates in the vicinity of the boundary portion between and and crystallizes easily, and the strength of the boundary decreases. In order to prevent this, it is necessary that the content of iron in the Al-SiC composite is 2% by weight or less. More preferably, it is 1% by weight or less.
【００１８】Ａｌ−ＳｉＣ系複合体の外表面にアルミニ
ウムを主成分とする金属からなる被覆層（アルミニウム
被覆層）を形成させた場合、相対する最も面積の広い主
面において、表面側のアルミニウム被覆層の厚さと、裏
面側のアルミニウム被覆層の厚さとを合計した厚さが、
表面側と裏面側のアルミニウム被覆層を含むＡｌ−Ｓｉ
Ｃ系複合体全体の厚さに対して、厚すぎれば複合体が反
りやすいが、１５％以下であれば反りを抑えることがで
きる。When a coating layer (aluminum coating layer) made of a metal containing aluminum as a main component is formed on the outer surface of the Al-SiC composite, the aluminum coating on the surface side is formed on the opposite main surface having the largest area. The total thickness of the layer thickness and the aluminum coating layer on the back side is
Al-Si containing front and back aluminum coating layers
If the thickness of the C-based composite is too large, the composite tends to warp, but if it is 15% or less, the warp can be suppressed.
【００１９】Ａｌ−ＳｉＣ系複合体中の炭化ケイ素粒子
が不均一に分散すれば、アルミニウム含浸後の収縮ムラ
により、複合体の反りが発生しやすい。また、アルミニ
ウム含浸不足の要因ともなる。このため、炭化ケイ素粒
子をできるかぎり均一に分散させなければならず、Ａｌ
−ＳｉＣ系複合体の相対する最も面積の広い主面におい
て、表面側と裏面側のアルミニウム被覆層を除いたＡｌ
−ＳｉＣ系複合体の表面より複合体厚の１／３以下を占
める部分の炭化ケイ素粒子の含有量と、裏面より複合体
厚の１／３以下を占める部分の炭化ケイ素粒子の含有量
との差が３体積％以下にすることが望ましい。If the silicon carbide particles in the Al-SiC type composite are non-uniformly dispersed, the composite tends to warp due to uneven contraction after impregnation with aluminum. It also causes a shortage of aluminum impregnation. For this reason, the silicon carbide particles must be dispersed as evenly as possible.
-Al, excluding the aluminum coating layers on the front surface side and the back surface side, on the opposite main surface of the SiC-based composite having the largest area.
Between the content of silicon carbide particles in the portion occupying 1/3 or less of the composite thickness from the surface of the SiC-based composite, and the content of silicon carbide particles in the portion occupying 1/3 or less of the composite thickness from the back surface It is desirable that the difference be 3% by volume or less.
【００２０】また、含浸させるアルミニウム中の酸素や
窒素量が多すぎると、溶融アルミニウムの流動性が悪化
する。そのため高温、長時間の含浸が必要となり、鉄分
の混入を増加させる要因となる。また、アルミニウムの
酸化物や窒化物が欠陥、特性低下の要因となり好ましく
ない。したがって、Ａｌ−ＳｉＣ系複合体中の酸素量を
５００ｐｐｍ以下、窒素量を１００ｐｐｍ以下に抑える
ことが望ましい。If the amount of oxygen or nitrogen contained in the aluminum to be impregnated is too large, the fluidity of the molten aluminum deteriorates. Therefore, high temperature and long time impregnation are required, which becomes a factor to increase the mixing of iron. Further, aluminum oxides and nitrides are not preferable because they cause defects and deteriorate characteristics. Therefore, it is desirable to keep the oxygen content in the Al-SiC composite to 500 ppm or less and the nitrogen content to 100 ppm or less.
【００２１】本発明のＡｌ−ＳｉＣ系複合体は、セラミ
ックス基板の熱膨張係数に近づけるため炭化ケイ素の含
有量は３０体積％以上が好ましく、より好ましくは４０
〜８０体積％である。炭化ケイ素量が３０体積％未満で
は熱膨張係数が大きくなり、８０体積％を超えると強
度、破壊靭性が低下する。In the Al-SiC composite of the present invention, the content of silicon carbide is preferably 30% by volume or more, more preferably 40%, so as to approach the coefficient of thermal expansion of the ceramic substrate.
˜80% by volume. When the amount of silicon carbide is less than 30% by volume, the coefficient of thermal expansion becomes large, and when it exceeds 80% by volume, the strength and fracture toughness decrease.
【００２２】本発明の製造方法としては、炭化ケイ素か
らなる多孔体にアルミニウムを主成分とする金属を、低
い温度で、短時間で含浸、凝固させる加圧含浸法が好ま
しい。炭化ケイ素質多孔体は、炭化ケイ素粉末に結合
剤、保形剤などを所定量添加し、所望の形状に成形され
る。成形方法は、アルミニウムが含浸を完了するまで形
態を保っておりかつ含浸を阻害しないのであれば、沈降
成形法、射出成形法、ＣＩＰ法など公知の方法でよい。
炭化ケイ素質多孔体を焼結せずに成形することが望まし
い。炭化ケイ素質多孔体を焼結して成形すると、炭化ケ
イ素粉末同士が接触する比率が高まり変形能が低下する
ため靭性が劣化しやすい。また、炭化ケイ素質多孔体を
焼結するには焼結助剤が必要であり、焼結した炭化ケイ
素質多孔体にアルミニウムを含浸させる場合、焼結助剤
の存在が含浸を阻害しやすい。炭化ケイ素粉末は１種類
のみを用いてもよいが、平均粒径の異なる炭化ケイ素粉
末を混合して用いれば、炭化ケイ素粉末を高密度に充填
できるので好ましい。As the production method of the present invention, a pressure impregnation method in which a porous body made of silicon carbide is impregnated and solidified with a metal containing aluminum as a main component at a low temperature in a short time is preferable. The silicon carbide based porous material is formed into a desired shape by adding a predetermined amount of a binder, a shape-retaining agent and the like to silicon carbide powder. The molding method may be a known method such as a precipitation molding method, an injection molding method, or a CIP method, as long as the shape of aluminum is maintained until the impregnation is completed and the impregnation is not hindered.
It is desirable to form the silicon carbide based porous material without sintering. When a silicon carbide-based porous body is sintered and molded, the ratio of silicon carbide powders in contact with each other increases and the deformability decreases, so the toughness is likely to deteriorate. Further, a sintering aid is required to sinter the silicon carbide-based porous body, and when impregnating the sintered silicon carbide-based porous body with aluminum, the presence of the sintering aid tends to hinder the impregnation. Although only one kind of silicon carbide powder may be used, it is preferable to mix and use silicon carbide powder having different average particle diameters because the silicon carbide powder can be packed at a high density.
【００２３】アルミニウムとしては、純Ａｌ、Ａｌ−Ｓ
ｉ系合金、Ａｌ−Ｓｉ−Ｍｇ系合金、Ａｌ−Ｃｕ系合金
が挙げられる。好ましくは、アルミニウム合金のＳｉ重
量％を共晶組成の１２重量％以下にするのがよい。過共
晶になると、脆い粗大なケイ素結晶が晶出することによ
り、Ａｌ−ＳｉＣ系複合体の靭性を低下させる。Ａｌ−
Ｓｉ系合金、Ａｌ−Ｓｉ−Ｍｇ系合金では、合金の融点
が低下し、含浸温度を下げることができる。また、高温
において溶融アルミニウムの粘性が低下し、含浸時間を
短縮できるので、含浸にかかる製造コスト的に有利とな
る。As aluminum, pure Al and Al-S are used.
Examples include i-based alloys, Al-Si-Mg-based alloys, and Al-Cu-based alloys. Preferably, the Si alloy weight percent of the aluminum alloy is 12 weight percent or less of the eutectic composition. When hypereutectic, brittle and coarse silicon crystals are crystallized to reduce the toughness of the Al-SiC composite. Al-
With Si-based alloys and Al-Si-Mg-based alloys, the melting point of the alloy is lowered, and the impregnation temperature can be lowered. Further, the viscosity of the molten aluminum is reduced at high temperatures, and the impregnation time can be shortened, which is advantageous in terms of manufacturing cost for impregnation.
【００２４】Ａｌ−ＳｉＣ系複合体の表面に炭化ケイ素
粉末が露出しないように、複合体の表面全体にわたっ
て、含浸したアルミニウムを主成分とする金属からなる
被覆層を設けることにより、電解あるいは無電解めっき
を施しやすくなる。また、アルミニウムが軟らかいので
面加工が容易になる。さらに、アルミニウム被覆層によ
り表面の切り欠き効果が低減され強度と靭性が向上す
る。By providing a coating layer made of a metal containing impregnated aluminum as a main component over the entire surface of the composite so that the silicon carbide powder is not exposed on the surface of the Al-SiC composite, electrolysis or electroless electrolysis is performed. Makes plating easier. Further, since aluminum is soft, surface processing becomes easy. Further, the aluminum coating layer reduces the surface notch effect and improves the strength and toughness.
【００２５】炭化ケイ素質多孔体中にアルミニウムを含
浸させる際に、炭化ケイ素質多孔体とこれを装入した型
の内壁との隙間に含浸アルミニウムの一部が通ることに
より、アルミニウム被覆層が形成される。被覆層を形成
するアルミニウムは、炭化ケイ素質多孔体に含浸された
アルミニウムと連通し、実質的に組成が同じである。炭
化ケイ素質多孔体と型の内壁との隙間の大きさを調整す
ることにより被覆層の厚みを変えることができる。被覆
層の平均厚みは、面加工後の仕上寸法精度により異なっ
てくるが、１０μｍ未満ではめっきが不均一になりやす
く、３００μｍもあれば効果が十分なので、１０〜３０
０μｍが好ましい。When aluminum is impregnated into the silicon carbide based porous material, a part of the impregnated aluminum passes through the gap between the silicon carbide based porous material and the inner wall of the mold in which the aluminum carbide based material is loaded to form an aluminum coating layer. To be done. The aluminum forming the coating layer communicates with the aluminum impregnated in the silicon carbide based porous material and has substantially the same composition. The thickness of the coating layer can be changed by adjusting the size of the gap between the silicon carbide based porous material and the inner wall of the mold. The average thickness of the coating layer varies depending on the finished dimensional accuracy after surface processing, but if it is less than 10 μm, the plating tends to be uneven, and if it is 300 μm, the effect is sufficient.
0 μm is preferable.
【００２６】Ａｌ−ＳｉＣ系複合体は、セラミックス基
板とのはんだ付けを強固にするために、複合体の表面に
Ｎｉ、Ｎｉ−Ｐ、Ｎｉ−ＢなどＮｉ系めっきを施すこと
が望ましい。Ｎｉ系めっきは、電解法あるいは無電解法
のいずれでも処理してよいが、無電解法のほうが厚みを
均一にしやすい。また、Ｎｉ系めっき層が複合体の表面
に二層以上積層してもよい。The Al-SiC composite is preferably plated with Ni, such as Ni, Ni-P or Ni-B, on the surface of the composite in order to strengthen soldering to the ceramic substrate. The Ni-based plating may be processed by either an electrolytic method or an electroless method, but the electroless method is easier to make the thickness uniform. Two or more Ni-based plating layers may be laminated on the surface of the composite.
【００２７】Ａｌ−ＳｉＣ系複合体は、室温の熱膨張係
数が４×１０-6〜２０×１０-6／Ｋであり、１０×１０
-6／Ｋ以下がより好ましい。２０×１０-6／Ｋを超える
と、セラミックス基板との熱膨張係数の差が大きくなり
過ぎて、加熱接合時や使用中の熱サイクルにより、セラ
ミックス基板に割れが生じやすくなる。The Al-SiC composite has a coefficient of thermal expansion at room temperature of 4 × 10 -6 to 20 × 10 -6 / K, and 10 × 10 6.
-6 / K or less is more preferable. When it exceeds 20 × 10 −6 / K, the difference in the coefficient of thermal expansion from the ceramics substrate becomes too large, and cracks are likely to occur in the ceramics substrate due to thermal bonding during heat bonding or during use.
【００２８】Ａｌ−ＳｉＣ系複合体の熱伝導率は、１５
０〜２８０Ｗ／（ｍ・Ｋ）であることが望ましい。１５
０Ｗ／（ｍ・Ｋ）未満では、特に大電力モジュール装置
において放熱能力が不足しがちになる。The thermal conductivity of the Al-SiC composite is 15
It is preferably 0 to 280 W / (m · K). 15
If it is less than 0 W / (m · K), the heat radiation capacity tends to be insufficient especially in a high power module device.
【００２９】本発明のＡｌ−ＳｉＣ系複合体は、放熱基
板、ヒートシンク、パッケージなどの放熱部品に好適で
ある。また、放熱部品は電子部品搭載用セラミックス基
板に接合して用いられ、セラミックス基板としては、熱
伝導率および曲げ強度に優れたＳｉ3Ｎ4、熱伝導率に優
れたＡｌＮ、耐熱性に優れたＡｌ2Ｏ3のいずれかからな
るのが好ましい。特に、Ｓｉ3Ｎ4やＡｌＮは絶縁性、放
熱特性にも優れているので好ましい。The Al--SiC composite of the present invention is suitable for heat dissipation components such as heat dissipation boards, heat sinks, and packages. Further, the heat dissipation component is used by being bonded to a ceramic substrate for mounting electronic components, and as the ceramic substrate, Si 3 N 4 excellent in thermal conductivity and bending strength, AlN excellent in thermal conductivity, and excellent in heat resistance are used. It is preferably composed of any of Al 2 O 3 . In particular, Si 3 N 4 and AlN are preferable because they have excellent insulating properties and heat dissipation properties.
【００３０】[0030]
【実施例】平均粒径６０μｍ、純度９８％以上の緑色炭
化ケイ素粉末に結合剤、保形剤の溶媒を加え、これを攪
拌機で混合して炭化ケイ素のスラリーを得た。スラリー
を所望の形状の金型に注入して成形後、冷却して脱型し
た。これを乾燥して板状の炭化ケイ素質多孔体を作製し
た。EXAMPLE A binder and a solvent for a shape-retaining agent were added to green silicon carbide powder having an average particle size of 60 μm and a purity of 98% or more, and this was mixed with a stirrer to obtain a silicon carbide slurry. The slurry was poured into a mold having a desired shape, molded, and then cooled to remove the mold. This was dried to produce a plate-like silicon carbide based porous material.
【００３１】ついで、炭化ケイ素質多孔体と型の内壁と
の間に所定の隙間を確保した状態で、炭化ケイ素質多孔
体を型に装入した。そして、炭化ケイ素質多孔体を装入
した型内に加熱溶融したアルミニウム合金（ＡＣ４Ｃ
Ｈ）を圧入することにより、短時間に含浸を完了させ
た。ここで、鉄の混入を避けるため、アルミニウム含浸
に用いる治具として、セラミックス製の治具を用いた。
含浸完了、冷却後、型を解体し、炭化ケイ素の含有量が
６３体積％である本発明実施例の板状のＡｌ−ＳｉＣ系
複合体を得た。Then, the silicon carbide based porous material was loaded into the mold while a predetermined gap was secured between the silicon carbide based porous material and the inner wall of the mold. Then, the aluminum alloy (AC4C
The impregnation was completed in a short time by pressing in H). Here, in order to avoid mixing of iron, a jig made of ceramics was used as a jig used for impregnating aluminum.
After completion of impregnation and cooling, the mold was disassembled to obtain a plate-shaped Al-SiC-based composite body of the example of the present invention having a silicon carbide content of 63% by volume.
【００３２】得られた複合体は、炭化ケイ素質多孔体中
にアルミニウムを含浸させる際に、炭化ケイ素質多孔体
とこの多孔体を装入した型の内壁との隙間に含浸アルミ
ニウムの一部が通ることにより、複合体の表面全体にわ
たって、アルミニウム被覆層が形成された。被覆層の厚
みは平均で５０μｍであり、複合体の表面には炭化ケイ
素粒子の露出が見られなかった。When the silicon carbide based porous material is impregnated with aluminum, a part of the impregnated aluminum is contained in the gap between the silicon carbide based porous material and the inner wall of the mold in which the porous material is loaded. By passing, an aluminum coating layer was formed over the entire surface of the composite. The coating layer had an average thickness of 50 μm, and no silicon carbide particles were exposed on the surface of the composite.
【００３３】また、アルミニウム含浸に用いる治具とし
て、鉄製の治具を用いた以外は前記実施例と同じ条件
で、比較例の板状のＡｌ−ＳｉＣ系複合体を作製した。Further, a plate-like Al-SiC composite body of a comparative example was produced under the same conditions as in the above-mentioned example except that an iron jig was used as a jig for impregnating aluminum.
【００３４】図１にこの比較例のＡｌ−ＳｉＣ系複合体
を断面観察したときの模式図を示す。図１において、図
１（ｂ）は図１（ａ）の四角領域内を拡大したもの、ま
た図１（ｃ）は図１（ｂ）の四角領域内を拡大したもの
である。FIG. 1 is a schematic view of an Al—SiC composite of this comparative example, which is observed in cross section. In FIG. 1, FIG. 1 (b) is an enlarged view of the inside of the rectangular area of FIG. 1 (a), and FIG. 1 (c) is an enlarged view of the inside of the rectangular area of FIG. 1 (b).
【００３５】図１（ａ）は、Ａｌ−ＳｉＣ系複合体の外
周の一部に設けた締結用孔の周辺部を上から見た図であ
り、１は炭化ケイ素質多孔体にアルミニウムを含浸させ
たＡｌ−ＳｉＣ系複合体の本体部、２はアルミニウム被
覆層、３は本体部1とアルミニウム被覆層２との境界
部、４はボルトなどを締結するための締結用孔、５はＡ
ｌ−ＳｉＣ系複合体の端面である。FIG. 1 (a) is a view of the periphery of a fastening hole formed in a part of the outer periphery of an Al--SiC based composite as seen from above, and 1 is a silicon carbide porous body impregnated with aluminum. The main body of the Al-SiC composite, 2 is an aluminum coating layer, 3 is a boundary between the main body 1 and the aluminum coating 2, 4 is a fastening hole for fastening a bolt, and 5 is A.
It is an end face of the 1-SiC-based composite.
【００３６】図１（ｂ）において、Ａｌ−ＳｉＣ系複合
体の本体部１とアルミニウム被覆層２との境界部３付近
に集中して鉄６が晶出している。この晶出した鉄６の殆
どはアルミニウム含浸の際に使用した鉄製の治具から混
入したものと思われる。In FIG. 1B, iron 6 is crystallized in the vicinity of the boundary 3 between the main body 1 of the Al--SiC composite and the aluminum coating layer 2. It is considered that most of this crystallized iron 6 was mixed from the iron jig used for the aluminum impregnation.
【００３７】図１（ｃ）において、Ａｌ−ＳｉＣ系複合
体の本体部１は炭化ケイ素粒子７とアルミニウム８から
構成され、アルミニウム８はアルミニウム被覆層２と連
通し、実質的に組成が同じである。アルミニウム被覆層
２の一部にはシリコン晶９が散在している。In FIG. 1 (c), the main body 1 of the Al--SiC composite is composed of silicon carbide particles 7 and aluminum 8, and the aluminum 8 communicates with the aluminum coating layer 2 and has substantially the same composition. is there. Silicon crystals 9 are scattered in a part of the aluminum coating layer 2.
【００３８】また、Ａｌ−ＳｉＣ系複合体の本体部１と
アルミニウム被覆層２との境界部３の強さを調べるため
にせん断試験を行なった。まず、前述の本発明の実施例
および比較例の各Ａｌ−ＳｉＣ系複合体の表面に、それ
ぞれ厚み５μｍのＮｉ−Ｐ無電解めっき、さらにその上
層に厚み１μｍのＮｉ−Ｂ無電解めっきを施した板状の
Ａｌ−ＳｉＣ系複合体を準備した。Further, a shearing test was conducted in order to examine the strength of the boundary portion 3 between the main body 1 of the Al--SiC composite and the aluminum coating layer 2. First, the surface of each of the Al-SiC based composites of the above-mentioned Examples and Comparative Examples of the present invention was subjected to Ni-P electroless plating with a thickness of 5 μm, and Ni-B electroless plating with a thickness of 1 μm was applied to the upper layer thereof. The plate-shaped Al-SiC composite was prepared.
【００３９】図２はこのせん断試験に用いたＡｌ−Ｓｉ
Ｃ系複合体の概略平面図である。図３はＡｌ−ＳｉＣ系
複合体のせん断試験を示す図である。図２および図３に
おいて、締結用孔４の周辺部にあるアルミニウム被覆層
２の上にかつ締結用孔４が隠れるように直径８ｍｍの円
柱状のピン１１を載置し、圧縮試験機により、ピン１１
にパンチ１２を押さえ付けることにより破断荷重と破壊
状態を評価比較した。表１に試験結果を示す。なお、１
０は締結用の孔、１３は支持台である。FIG. 2 shows the Al--Si used in this shear test.
It is a schematic plan view of a C-based composite. FIG. 3 is a view showing a shear test of an Al-SiC composite. 2 and 3, a cylindrical pin 11 having a diameter of 8 mm is placed on the aluminum coating layer 2 in the peripheral portion of the fastening hole 4 so that the fastening hole 4 is hidden, and a compression tester is used. Pin 11
The breaking load and the fractured state were evaluated and compared by pressing the punch 12 to the. Table 1 shows the test results. 1
Reference numeral 0 is a fastening hole, and 13 is a support base.
【００４０】[0040]
【表１】 [Table 1]
【００４１】表１から、比較例は本発明の実施例より小
さいせん断荷重を加えても、Ａｌ−ＳｉＣ系複合体の本
体部１とアルミニウム被覆層２との境界部３付近に集中
して鉄６が晶出しているため、本体部１とアルミニウム
被覆層２の境界部３から破断した。一方、本発明の実施
例は境界部３付近に集中して鉄６が晶出しておらず、本
体部１から破壊して構造体として十分な耐力を有するの
でより好ましい形態であることが確認できた。From Table 1, in the comparative example, even if a shear load smaller than that of the embodiment of the present invention is applied, the iron is concentrated near the boundary portion 3 between the main body 1 of the Al--SiC composite and the aluminum coating layer 2. Since 6 was crystallized, it fractured from the boundary portion 3 between the main body portion 1 and the aluminum coating layer 2. On the other hand, in the example of the present invention, iron 6 was not crystallized in the vicinity of the boundary portion 3 and was destroyed from the main body portion 1 to have a sufficient proof stress as a structure, so it can be confirmed that this is a more preferable form. It was
【００４２】これらのＡｌ−ＳｉＣ系複合体から各種試
験片を切り出し、測定を行った。結果を表２に示す。複
合体の熱膨張係数は、複合体から幅３ｍｍ×厚さ６ｍｍ
×長さ１５ｍｍの試験片を切り出した後、常温から１０
０℃の温度範囲でＴＭＡ（サーモメカニカルアナライザ
ー、セイコー（株）製）を用いて測定した。Various test pieces were cut out from these Al--SiC composites and measured. The results are shown in Table 2. The coefficient of thermal expansion of the composite is 3 mm wide x 6 mm thick from the composite.
× After cutting a test piece with a length of 15 mm, the temperature is 10 at room temperature.
It was measured using TMA (Thermo-mechanical analyzer, Seiko Co., Ltd.) in the temperature range of 0 ° C.
【００４３】熱伝導率は、複合体から直径１０ｍｍ×高
さ３ｍｍの試験片を切り出した後、熱定数測定装置（LF
／TCM−FA8510B、理学電機社製）を用いて、ＪＩＳ１６
０６に準拠してレーザーフラッシュ法により測定した。The thermal conductivity was measured by cutting out a test piece having a diameter of 10 mm and a height of 3 mm from the composite and then measuring the thermal constant (LF
/ TCM-FA8510B, manufactured by Rigaku Denki Co., Ltd., JIS16
The measurement was carried out by the laser flash method according to 06.
【００４４】曲げ強さは、複合体から幅４ｍｍ×厚さ３
ｍｍ×長さ４０ｍｍの試験片を切り出した後、ＪＩＳ１
６０１−１９８１に準拠して、曲げ試験機により４点曲
げ強さを測定した。試験片をスパン距離３０ｍｍに配置
された２支点上に置き、支点間の中央から左右に等しい
距離に２点に分けて荷重を加えて試験した。The bending strength is 4 mm width × thickness 3 from the composite.
After cutting out a test piece of mm × length 40 mm, JIS1
According to 601-1981, 4-point bending strength was measured by a bending tester. The test piece was placed on two fulcrums arranged at a span distance of 30 mm, and a load was applied to the fulcrums at two equal distances from the center between the fulcrums to the left and right.
【００４５】[0045]
【表２】 [Table 2]
【００４６】表２において、本発明の実施例は比較例に
比べ高い熱伝導率と曲げ強さが得られた。In Table 2, the examples of the present invention showed higher thermal conductivity and higher bending strength than the comparative examples.
【００４７】また、本発明実施例のＡｌ−ＳｉＣ系複合
体の相対する最も面積の広い主面において、表面側のア
ルミニウム被覆層の厚さｔと、裏面側のアルミニウム被
覆層の厚さｂとの合計厚さｔ＋ｂは約０．１ｍｍであっ
た。この被覆層の合計厚さｔ＋ｂは、表面側と裏面側の
アルミニウム被覆層の合計厚さｔ＋ｂを含むＡｌ−Ｓｉ
Ｃ系複合体全体の厚さ約２．９ｍｍに対して約３．４％
を占め、複合体の反りは発生しなかった。Further, on the opposite main surface having the largest area of the Al-SiC composite of the embodiment of the present invention, the thickness t of the aluminum coating layer on the front surface side and the thickness b of the aluminum coating layer on the back surface side are set. The total thickness t + b of was about 0.1 mm. The total thickness t + b of the coating layer includes Al-Si including the total thickness t + b of the aluminum coating layers on the front surface side and the back surface side.
About 3.4% for the total thickness of the C-based composite of about 2.9 mm
, The warp of the composite did not occur.
【００４８】また、本発明実施例のＡｌ−ＳｉＣ系複合
体の相対する最も面積の広い主面において、表面側と裏
面側のアルミニウム被覆層を加工により除去した。そし
て、複合体の表面と裏面の炭化ケイ素粒子の含有量を画
像処理装置を用いて調べた。画像処理装置により５箇所
の視野を測定し、得られた面積％を体積％として評価し
た。なお、アルミニウム中のＳｉ％も炭化ケイ素量とし
て検出している。表３に測定結果を示す。炭化ケイ素量
の表面側と裏面側の差は０．５体積％であり、炭化ケイ
素粒子が均一に分散されていた。Further, the aluminum coating layers on the front surface side and the back surface side were removed by processing on the opposing main surfaces having the largest area of the Al--SiC composites of the examples of the present invention. Then, the content of silicon carbide particles on the front surface and the back surface of the composite was examined using an image processing device. The visual field at 5 locations was measured by an image processing device, and the obtained area% was evaluated as volume%. In addition, Si% in aluminum is also detected as the amount of silicon carbide. Table 3 shows the measurement results. The difference in the amount of silicon carbide between the front surface side and the back surface side was 0.5% by volume, and the silicon carbide particles were uniformly dispersed.
【００４９】[0049]
【表３】 [Table 3]
【００５０】表４に、本発明実施例のＡｌ−ＳｉＣ系複
合体中の酸素、窒素などの微量元素の含有量（重量％）
を測定した結果を示す。なお、酸素、窒素量の単位はｐ
ｐｍである。Ａｌ−ＳｉＣ系複合体中の鉄の含有量は
０．１１％であり、酸素および窒素量も好ましい濃度以
下であった。Table 4 shows the contents (wt%) of trace elements such as oxygen and nitrogen in the Al-SiC composites of the examples of the present invention.
The results of measurement are shown below. The unit of oxygen and nitrogen is p
pm. The iron content in the Al-SiC-based composite was 0.11%, and the oxygen and nitrogen contents were also below the preferred concentrations.
【００５１】[0051]
【表４】 [Table 4]
【００５２】また、本発明のＡｌ−ＳｉＣ系複合体を研
削加工して、１９０ｍｍ×１４０ｍｍ×３ｍｍのＩＧＢ
Ｔ用の放熱基板とし、表面に無電解Ｎｉ系めっきを施
し、厚み７μｍの均一なめっき層を形成した。この放熱
基板表面に半田ペーストをスクリーン印刷し、半田ペー
スト上にＳｉ3Ｎ4からなるセラミックス基板を載置し、
３００℃のリフロー炉で５分間加熱処理してセラミック
ス基板を接合させた。Further, the Al--SiC composite of the present invention is ground to obtain an IGB of 190 mm × 140 mm × 3 mm.
As a heat dissipation substrate for T, electroless Ni-based plating was applied to the surface to form a uniform plating layer having a thickness of 7 μm. A solder paste is screen-printed on the surface of the heat dissipation substrate, and a ceramic substrate made of Si 3 N 4 is placed on the solder paste.
The ceramic substrates were joined by heat treatment for 5 minutes in a reflow oven at 300 ° C.
【００５３】このセラミックス基板を接合した放熱基板
を、厚さ２０ｍｍのアルミニウム製の支持板に８本のボ
ルトによって締め付け固定して、−４０℃〜＋１２５℃
を１サイクルとして１０００サイクルの冷熱サイクル試
験を行った。ヒートサイクル試験後、放熱基板の変形、
はんだ層の破壊、熱流路の遮断、セラミックス基板の割
れは見られなかった。The heat dissipation board to which this ceramics board was joined was fastened and fixed to an aluminum support plate having a thickness of 20 mm with eight bolts, and -40 ° C to + 125 ° C.
Was set as one cycle, and a 1000-cycle thermal cycle test was performed. After heat cycle test, deformation of heat dissipation board,
The solder layer was not broken, the heat flow path was blocked, and the ceramic substrate was not cracked.
【００５４】[0054]
【発明の効果】本発明のＡｌ−ＳｉＣ系複合体によれ
ば、低熱膨張性を有するとともに、高い熱伝導率と強度
を兼ね備えており、セラミックス基板と接合しても割れ
を防止できる信頼性の高い放熱部品が得られる。According to the Al-SiC composite of the present invention, it has a low thermal expansion property, a high thermal conductivity and high strength. High heat dissipation parts can be obtained.
【図１】比較例のＡｌ−ＳｉＣ系複合体を断面観察した
ときの模式図を示す。FIG. 1 is a schematic view when observing a cross section of an Al—SiC-based composite body of a comparative example.
【図２】せん断試験に用いたＡｌ−ＳｉＣ系複合体の概
略平面図を示す。FIG. 2 shows a schematic plan view of an Al—SiC composite used in a shear test.
【図３】Ａｌ−ＳｉＣ系複合体のせん断試験を示す図で
ある。FIG. 3 is a diagram showing a shear test of an Al-SiC composite.
１ Ａｌ−ＳｉＣ系複合体の本体部 ２ アルミニウム
被覆層、 ３ 境界部、４ 締結用孔、 ５ 端面、
６ 晶出した鉄、 ７ 炭化ケイ素粒子、８ アルミニ
ウム、 ９ シリコン晶、 １０ 締結用孔、 １１
ピン、１２ パンチ、 １３ 支持台DESCRIPTION OF SYMBOLS 1 Main part of Al-SiC type composite body 2 Aluminum coating layer, 3 Border part, 4 Fastening hole, 5 End surface,
6 Crystallized iron, 7 Silicon carbide particles, 8 Aluminum, 9 Silicon crystal, 10 Fastening holes, 11
Pin, 12 punch, 13 support
Claims (11)
化ケイ素粒子を分散させてなるＡｌ−ＳｉＣ系複合体で
あって、該複合体中の鉄の含有量が２重量％以下である
ことを特徴とするＡｌ−ＳｉＣ系複合体。1. An Al-SiC-based composite body comprising silicon carbide particles dispersed in a metal containing aluminum as a main component, wherein the iron content in the composite body is 2% by weight or less. A characteristic Al-SiC based composite.
ニウムを主成分とする金属からなる被覆層が形成されて
おり、相対する最も面積の広い主面において、表裏の被
覆層の合計厚さが、表裏の被覆層を含むＡｌ−ＳｉＣ系
複合体の厚さに対して１５％以下であることを特徴とす
る請求項１に記載のＡｌ−ＳｉＣ系複合体。2. A coating layer made of a metal containing aluminum as a main component is formed on the outer surface of the Al-SiC composite, and the total thickness of the coating layers on the front and back sides is the same on the main surface having the largest area. Is 15% or less with respect to the thickness of the Al-SiC-based composite including the front and back coating layers, the Al-SiC-based composite according to claim 1.
ニウムを主成分とする金属からなる被覆層が形成されて
おり、相対する最も面積の広い主面において、表裏の被
覆層を除いたＡｌ−ＳｉＣ系複合体の表面より複合体厚
の１／３以下を占める部分の炭化ケイ素粒子の含有量
と、裏面より複合体厚の１／３以下を占める部分の炭化
ケイ素粒子の含有量との差が３体積％以下であることを
特徴とする請求項１または２に記載のＡｌ−ＳｉＣ系複
合体。3. A coating layer made of a metal containing aluminum as a main component is formed on the outer surface of the Al—SiC-based composite, and the main surface having the largest area facing the Al-SiC-based composite is the aluminum except the front and back coating layers. Between the content of silicon carbide particles in the portion occupying 1/3 or less of the composite thickness from the surface of the SiC-based composite, and the content of silicon carbide particles in the portion occupying 1/3 or less of the composite thickness from the back surface The Al-SiC based composite according to claim 1 or 2, wherein the difference is 3% by volume or less.
が重量比で５００ｐｐｍ以下であることを特徴とする請
求項１〜３のいずれかに記載のＡｌ−ＳｉＣ系複合体。4. The Al-SiC based composite according to any one of claims 1 to 3, wherein the oxygen content in the Al-SiC based composite is 500 ppm or less in weight ratio.
が重量比で１００ｐｐｍ以下であることを特徴とする請
求項１〜４のいずれかに記載のＡｌ−ＳｉＣ系複合体。5. The Al-SiC based composite according to any one of claims 1 to 4, wherein the content of nitrogen in the Al-SiC based composite is 100 ppm or less in weight ratio.
を主成分とする金属中に炭化ケイ素粒子を３０体積％以
上分散させてなることを特徴とする請求項１〜５のいず
れかに記載のＡｌ−ＳｉＣ系複合体。6. The Al-SiC based composite according to claim 1, wherein silicon carbide particles are dispersed in a metal containing aluminum as a main component in an amount of 30% by volume or more. Al-SiC based composite.
素からなる多孔体にアルミニウムを主成分とする金属を
加圧含浸して形成されたことを特徴とする請求項１〜６
のいずれかに記載のＡｌ−ＳｉＣ系複合体。7. The Al-SiC composite is formed by pressure-impregnating a porous body mainly made of silicon carbide with a metal containing aluminum as a main component.
The Al-SiC composite according to any one of 1.
係数が４×１０-6〜２０×１０-6／Ｋ、熱伝導率が１５
０〜２８０Ｗ／（ｍ・Ｋ）であることを特徴とする請求
項１〜７のいずれかに記載のＡｌ−ＳｉＣ系複合体。8. The Al-SiC composite has a coefficient of thermal expansion at room temperature of 4 × 10 −6 to 20 × 10 −6 / K and a thermal conductivity of 15.
It is 0-280 W / (m * K), The Al-SiC type composite body in any one of Claims 1-7 characterized by the above-mentioned.
ＳｉＣ系複合体からなることを特徴とする放熱部品。9. The Al- according to any one of claims 1 to 8.
A heat dissipation component comprising a SiC-based composite.
ク、パッケージのいずれかであることを特徴とする請求
項９に記載の放熱部品。10. The heat dissipation component according to claim 9, wherein the heat dissipation component is any one of a heat dissipation board, a heat sink, and a package.
合してなることを特徴とする請求項１０に記載の放熱部
品。11. The heat dissipation component according to claim 10, wherein the heat dissipation component is bonded to a ceramics substrate for mounting electronic components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063441A JP2003268478A (en) | 2002-03-08 | 2002-03-08 | Al-SiC COMPOSITE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063441A JP2003268478A (en) | 2002-03-08 | 2002-03-08 | Al-SiC COMPOSITE |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003268478A true JP2003268478A (en) | 2003-09-25 |
Family
ID=29196708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002063441A Pending JP2003268478A (en) | 2002-03-08 | 2002-03-08 | Al-SiC COMPOSITE |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003268478A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008050868A1 (en) * | 2006-10-27 | 2008-05-02 | Mitsubishi Materials Corporation | Power module substrate, method for manufacturing power module substrate, and power module |
| CN113795376A (en) * | 2019-04-02 | 2021-12-14 | 住友电气工业株式会社 | Composite member and heat-dissipating member |
-
2002
- 2002-03-08 JP JP2002063441A patent/JP2003268478A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008050868A1 (en) * | 2006-10-27 | 2008-05-02 | Mitsubishi Materials Corporation | Power module substrate, method for manufacturing power module substrate, and power module |
| JP2008108993A (en) * | 2006-10-27 | 2008-05-08 | Mitsubishi Materials Corp | Substrate for power module, method of manufacturing the substrate for power module, and power module |
| JP4629016B2 (en) * | 2006-10-27 | 2011-02-09 | 三菱マテリアル株式会社 | Power module substrate with heat sink, method for manufacturing power module substrate with heat sink, and power module |
| US8044500B2 (en) | 2006-10-27 | 2011-10-25 | Mitsubishi Materials Corporation | Power module substrate, method for manufacturing power module substrate, and power module |
| CN113795376A (en) * | 2019-04-02 | 2021-12-14 | 住友电气工业株式会社 | Composite member and heat-dissipating member |
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