JP2003221670A - Plasma treatment apparatus - Google Patents
Plasma treatment apparatusInfo
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- JP2003221670A JP2003221670A JP2002023118A JP2002023118A JP2003221670A JP 2003221670 A JP2003221670 A JP 2003221670A JP 2002023118 A JP2002023118 A JP 2002023118A JP 2002023118 A JP2002023118 A JP 2002023118A JP 2003221670 A JP2003221670 A JP 2003221670A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はポリイミド等の柔軟
な材料から成る帯状の被処理物を処理するためのプラズ
マ処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for processing a belt-shaped object made of a flexible material such as polyimide.
【０００２】[0002]
【従来の技術】上記のようなプラズマ処理装置の一例が
特開2001-288569号公報に開示されている。このプラズ
マ処理装置は、帯状に連続する被処理物をシート状（略
平面状）に保持し、その被処理物の両面から同時に所定
のプラズマ処理を施すプラズマ処理部を有する。このプ
ラズマ処理部は、その中で、プラズマを励起させ、処理
を行うための容器と、プラズマに必要な原料ガスを供給
するガス供給システムと、排気し容器内を減圧するため
の排気システムを有する。容器の内部には、前記シート
状に保持された被処理物から等距離に略平行に対峙して
配置された対電極が設けられている。この対電極には、
高周波電源により、互いに逆位相の高周波が印加され
る。このようなプラズマ処理装置において、対電極の一
方と他方に互いに逆位相の高周波を印加すると、被処理
物の両面が同時に処理される。2. Description of the Related Art One example of the above plasma processing apparatus is disclosed in Japanese Patent Laid-Open No. 2001-288569. This plasma processing apparatus has a plasma processing unit that holds an object to be processed continuous in a belt shape in a sheet shape (substantially planar shape) and performs a predetermined plasma processing on both surfaces of the object to be processed at the same time. The plasma processing unit has a container for exciting plasma to perform processing therein, a gas supply system for supplying a raw material gas required for plasma, and an exhaust system for exhausting and reducing the pressure in the container. . Inside the container, a counter electrode is provided which is arranged equidistantly from the object to be processed held in a sheet shape and which is substantially parallel to and opposed to each other. This counter electrode has
High-frequency power supplies apply high-frequency waves having mutually opposite phases. In such a plasma processing apparatus, when high frequencies having opposite phases are applied to one and the other of the counter electrodes, both surfaces of the object to be processed are simultaneously processed.
【０００３】[0003]
【発明が解決しようとする課題】被処理物の利用形態
（例えば、処理後の製品を用いて作製しようとするデバ
イスの種類）によっては、被処理物の片面だけを処理す
ればよく、他の面は処理する必要がないことがある。こ
のような場合に上記プラズマ処理装置を用いると、本来
処理する必要のない面まで処理するという無駄が生じ
る。また、被処理物の利用形態によっては、その片面を
処理すべきではないこともある。このような場合に上記
装置を用いると、被処理物を所望の形態で利用できなく
なる。本発明はこのような課題を解決するために成され
たものであり、その目的とするところは、帯状の被処理
物の両面を同時処理できるだけでなく、片面だけを処理
することもできるプラズマ処理装置を提供することにあ
る。Depending on the usage form of the object to be processed (for example, the type of device to be manufactured by using the processed product), only one side of the object to be processed may be processed. The face may not need to be treated. In such a case, if the above plasma processing apparatus is used, there is a waste of processing even a surface that originally does not need to be processed. Further, depending on the usage of the object to be processed, one side may not be processed. If the above apparatus is used in such a case, the object to be processed cannot be used in a desired form. The present invention has been made to solve such a problem, and an object of the present invention is not only simultaneous processing of both sides of a strip-shaped object to be processed but also plasma processing capable of processing only one side. To provide a device.
【０００４】[0004]
【課題を解決するための手段】上記課題を解決するため
に成された本発明に係るプラズマ処理装置は、被処理物
をプラズマ処理するための処理室、前記処理室内で帯状
の被処理物を緊張状態に保持しつつ該被処理物をその長
さ方向に送るための送り機構、前記処理室内で前記被処
理物の第一面及び第二面にそれぞれ対面するように配置
された第一電極及び第二電極、前記第一電極及び第二電
極に交流電圧を印加するための交流電源、及び、前記第
一電極に交流電圧が印加されるとともに前記第二電極が
接地される第一面処理モード、前記第二電極に交流電圧
が印加されるとともに前記第一電極が接地される第二面
処理モード、及び、両方の電極に交流電圧が印加される
両面処理モードの中から交流電圧の印加モードを切り換
えるためのスイッチ機構、を備えることを特徴とする。SUMMARY OF THE INVENTION A plasma processing apparatus according to the present invention, which has been made to solve the above-mentioned problems, provides a processing chamber for plasma-treating an object to be processed, and a belt-shaped object to be processed in the processing chamber. A feed mechanism for feeding the object to be processed in the longitudinal direction while maintaining the tension, and a first electrode arranged so as to face the first surface and the second surface of the object in the processing chamber, respectively. And a second electrode, an AC power supply for applying an AC voltage to the first electrode and the second electrode, and a first surface treatment in which the AC voltage is applied to the first electrode and the second electrode is grounded. Application of an AC voltage from a mode, a second surface treatment mode in which an AC voltage is applied to the second electrode and the first electrode is grounded, and a double-sided treatment mode in which an AC voltage is applied to both electrodes. Switch for switching modes Mechanism, characterized in that it comprises a.
【０００５】[0005]
【発明の実施の形態及び発明の効果】本発明に係るプラ
ズマ処理装置では、スイッチ機構によって電極への電圧
の印加モードを切り替えることにより、被処理物のいず
れか一方の面だけ処理したり、両面を同時に処理したり
することができる。すなわち、第一電極に交流電圧を印
加するとともに第二電極を接地すると被処理物の第一面
が処理され（第一面処理モード）、第二電極に交流電圧
を印加するとともに第一電極を接地すると被処理物の第
二面が処理され（第二面処理モード）、両電極に交流電
圧を印加すると被処理物の両面が同時に処理される（両
面処理モード）。交流電圧の印加モードは、被処理物を
その長さ方向に送っている間でも切り換えることができ
る。従って、例えば、帯状の被処理物の一部に対しては
第一面のみ処理し、別の一部に対しては第二面のみ処理
し、他の部分に対しては両面を処理するというように、
必要に応じて被処理物の部分毎に異なる処理を施すこと
が可能である。以上のような電圧印加モードの切り換え
は、例えばユーザによる処理モードの指定（第一面、第
二面、両面）に応じて制御装置が自動的に行うようにす
ることができる。BEST MODE FOR CARRYING OUT THE INVENTION In the plasma processing apparatus according to the present invention, by switching the application mode of the voltage to the electrode by the switch mechanism, only one surface of the object to be processed or both surfaces can be processed. Can be processed simultaneously. That is, when the AC voltage is applied to the first electrode and the second electrode is grounded, the first surface of the object to be processed is processed (first surface processing mode), and the AC voltage is applied to the second electrode and the first electrode is When grounded, the second surface of the object to be processed is processed (second surface processing mode), and when AC voltage is applied to both electrodes, both surfaces of the object to be processed are processed simultaneously (double-sided processing mode). The application mode of the AC voltage can be switched even while the object to be processed is being sent in its length direction. Therefore, for example, it is said that only a first surface is processed for a part of a band-shaped object, only a second surface is processed for another part, and both surfaces are processed for another part. like,
It is possible to perform different treatments for each part of the object to be treated, if necessary. The switching of the voltage application mode as described above can be automatically performed by the control device according to, for example, the designation of the processing mode by the user (first surface, second surface, both surfaces).
【０００６】本発明に係るプラズマ処理装置において、
第一電極及び第二電極に印加される交流電圧は同位相で
も逆位相でもよく、180°以外の位相差があってもよ
い。また、両電極に印加される交流電圧の周波数は同じ
でもよく、異なっていてもよい。また、プラズマ処理効
率を高めるには、被処理物を接地することが好ましい。
例えば、被処理物が第一面又は第二面の少なくとも一方
に導体層を有する場合、あるいは、プラズマ処理の結果
として被処理物の第一面又は第二面の少なくとも一方に
導体層が形成される場合、適宜配線を用いてその導体層
を接地することにより、被処理物全体をほぼ接地電位に
することができる。In the plasma processing apparatus according to the present invention,
The AC voltage applied to the first electrode and the second electrode may have the same phase or opposite phases, and may have a phase difference other than 180 °. Further, the frequencies of the alternating voltage applied to both electrodes may be the same or different. Further, in order to enhance the plasma processing efficiency, it is preferable to ground the object to be processed.
For example, when the object to be processed has a conductor layer on at least one of the first surface or the second surface, or as a result of the plasma treatment, a conductor layer is formed on at least one of the first surface or the second surface of the object to be processed. In this case, the entire object to be processed can be brought to approximately the ground potential by grounding the conductor layer by using an appropriate wiring.
【０００７】本発明に係るプラズマ処理装置の好ましい
一形態においては、前記被処理物と前記第一電極及び第
二電極との間の距離を変更するための距離変更手段を更
に設ける。被処理物の片面だけを処理する場合、被処理
物が相対的に接地電極（処理対象面とは反対側の電極）
に近くなるように被処理物及び両電極の位置関係を調節
する。すなわち、第一面処理モードでは被処理物を相対
的に第二電極に近づける一方、第二面処理モードでは被
処理物を相対的に第一電極に近づける。このとき、被処
理物を接地電極に接触させてもよい。このように被処理
物を接地電極に近接又は接触させると、被処理物の電位
が接地電位に近くなるため、プラズマ処理効率が高ま
る。なお、被処理物の両面を処理する場合は、両電極か
らの被処理物の距離が等しくなるように被処理物及び両
電極の位置関係を調節する。以上のような被処理物及び
両電極の位置関係の調節は、例えばユーザによる処理モ
ードの指定に応じて制御装置が自動的に行うようにする
ことができる。In a preferred embodiment of the plasma processing apparatus according to the present invention, distance changing means for changing the distance between the object to be processed and the first electrode and the second electrode is further provided. When processing only one side of the object to be processed, the object to be processed is relatively grounded electrode (the electrode on the side opposite to the surface to be processed)
The positional relationship between the object to be processed and both electrodes is adjusted so as to be close to That is, in the first surface processing mode, the object to be processed is brought relatively close to the second electrode, while in the second surface processing mode, the object to be processed is relatively brought close to the first electrode. At this time, the object to be processed may be brought into contact with the ground electrode. When the object to be processed is brought close to or in contact with the ground electrode in this manner, the potential of the object to be processed becomes close to the ground potential, so that the plasma processing efficiency is improved. When processing both surfaces of the object to be processed, the positional relationship between the object to be processed and both electrodes is adjusted so that the distance from the object to be processed is the same. The adjustment of the positional relationship between the object to be processed and both electrodes as described above can be automatically performed by the control device according to the designation of the processing mode by the user, for example.
【０００８】[0008]
【実施例】本発明の一実施例であるプラズマ処理装置の
要部の概略構成を図１に示す。図１のプラズマ処理装置
は、送り出しリール室２、処理室４及び巻き取りリール
室６を備えている。送り出しリール室２及び巻き取りリ
ール室６には、帯状の被処理物１０をロール状に保持す
るための送り出しリール１２及び巻き取りリール１４が
それぞれ備えられている。送り出しリール１２を図１の
矢印Ａ１の方向に回転させると、送り出しリール１２に
保持された被処理物１０が処理室４に送り出され、巻き
取りリール１４を図１の矢印Ａ２の方向に回転させる
と、処理室４を通過した被処理物１０が巻き取りリール
１４に巻き取られる。送り出しリール１２と巻き取りリ
ール１４の回転を適宜制御することにより、被処理物１
０を緊張状態で長さ方向に送ることができる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a schematic structure of a main part of a plasma processing apparatus which is an embodiment of the present invention. The plasma processing apparatus of FIG. 1 includes a delivery reel chamber 2, a processing chamber 4, and a take-up reel chamber 6. The delivery reel chamber 2 and the take-up reel chamber 6 are provided with a delivery reel 12 and a take-up reel 14, respectively, for holding the strip-shaped workpiece 10 in a roll shape. When the delivery reel 12 is rotated in the direction of arrow A1 in FIG. 1, the workpiece 10 held by the delivery reel 12 is delivered to the processing chamber 4, and the take-up reel 14 is rotated in the direction of arrow A2 in FIG. Then, the object to be processed 10 that has passed through the processing chamber 4 is taken up by the take-up reel 14. By appropriately controlling the rotations of the delivery reel 12 and the take-up reel 14, the object to be processed 1
0 can be sent in the length direction in a tension state.
【０００９】処理室４内では、一対の電極板１６、１８
が被処理物１０を挟んで対峙するように平行に配置され
ている。ローラ２０、２２は、被処理物１０が適度に緊
張した状態で電極板１６、１８に略平行になるように、
被処理物１０を押圧している。このローラ２０、２２
は、配線２１、２３により接地されている。In the processing chamber 4, a pair of electrode plates 16 and 18 are provided.
Are arranged in parallel so as to face each other with the object to be processed 10 sandwiched therebetween. The rollers 20 and 22 are arranged so that the workpiece 10 is substantially parallel to the electrode plates 16 and 18 in a state where the workpiece 10 is appropriately tensioned.
The object to be processed 10 is pressed. These rollers 20, 22
Is grounded by wires 21 and 23.
【００１０】ローラ２０、２２は図１の矢印Ａ３の方向
（電極板１６、１８の面に垂直な方向）に移動可能なキ
ャリッジ２４、２６に取り付けられている。キャリッジ
２４、２６の位置はモータ２８、３０を適宜駆動するこ
とにより変更可能である。なお、図１の装置では各キャ
リッジ２４、２６に対して別個のモータ２８、３０が用
いられているが、一つのモータで両方のキャリッジ２
４、２６を同時に駆動するように駆動系を構成してもよ
い。The rollers 20 and 22 are attached to carriages 24 and 26 which are movable in the direction of arrow A3 in FIG. 1 (direction perpendicular to the surfaces of the electrode plates 16 and 18). The positions of the carriages 24 and 26 can be changed by appropriately driving the motors 28 and 30. In the apparatus shown in FIG. 1, separate motors 28 and 30 are used for the carriages 24 and 26, but one carriage is used for both carriages 2.
The drive system may be configured to drive 4 and 26 at the same time.
【００１１】電極板１６、１８はそれぞれリレー３２、
３４に接続されている。リレー３２、３４は、交流電源
３６、３８が接続された端子Ｔａと、接地された端子Ｔ
ｂとの間でスイッチの切り換えを行う。リレー３２、３
４の動作は制御装置４０により制御される。交流電源３
６、３８には低周波電源（周波数は30〜500kHzの範囲
で、例えば400kHz）を利用する。なお、図１の装置では
各電極板１６、１８に対して別個の交流電源３６、３８
が用いられているが、同一の交流電源から両方の電極板
１６、１８に交流電圧を供給するように給電系を構成し
てもよい。The electrode plates 16 and 18 are respectively relays 32 and
It is connected to 34. The relays 32 and 34 include a terminal Ta to which the AC power sources 36 and 38 are connected and a terminal T that is grounded.
The switch is switched to or from b. Relays 32, 3
The operation of 4 is controlled by the control device 40. AC power supply 3
A low-frequency power source (frequency is in the range of 30 to 500 kHz, for example, 400 kHz) is used for each of 6 and 38. In the apparatus of FIG. 1, separate AC power sources 36 and 38 are provided for the electrode plates 16 and 18, respectively.
However, the power supply system may be configured to supply an AC voltage to both electrode plates 16 and 18 from the same AC power supply.
【００１２】上記の他、本実施例のプラズマ処理装置に
は、処理室４にプラズマ原料ガスを供給するためのガス
供給機構や処理室４の内部を減圧するためのポンプ等か
ら成るガス排出機構等が備えられているが、これらは図
示していない。In addition to the above, in the plasma processing apparatus of this embodiment, a gas discharge mechanism including a gas supply mechanism for supplying the plasma source gas to the processing chamber 4 and a pump for depressurizing the inside of the processing chamber 4. Etc. are provided, but these are not shown.
【００１３】図１のプラズマ処理装置を用いた被処理物
１０の処理は次のように行われる。The object 10 to be processed using the plasma processing apparatus shown in FIG. 1 is processed as follows.
【００１４】（両面同時処理）被処理物１０の両面を同
時処理する場合について図１を参照しながら説明する。
被処理物１０の両面（１０Ａ、１０Ｂ）を同時処理する
場合、被処理物１０から両方の電極板１６、１８までの
距離が略等しくなるような位置まで、モータ２８、３０
でキャリッジ２４、２６を移動させる。次に、処理室４
の内部を所定圧力まで減圧した後、プラズマ原料ガスを
処理室４に供給しながら、リレー３２、３４のスイッチ
をいずれも端子Ｔａ側（電源側）に設定する（図１参
照）。この結果、電極板１６、１８にそれぞれ交流電圧
が印加される。これらの交流電圧の位相は同位相でも逆
位相でもよく、あるいは180°以外の位相差があっても
よい。一方、上述の通りローラ２０、２２は接地されて
いるため、それに接している被処理物１０の両面１０
Ａ、１０Ｂの電位もほぼ接地電位に等しい。従って、被
処理物１０の両側でそれぞれプラズマが効率よく発生す
る。これにより、被処理物１０の第一面１０Ａ及び第二
面１０Ｂが同時にプラズマ処理される。なお、ローラ２
０、２２を通じて被処理物１０を接地電位にしない場合
でも、電極板１６、１８に印加する交流電圧の位相を逆
位相にすれば、被処理物１０の両側で効率よくプラズマ
を発生させることができる。(Simultaneous Processing on Both Sides) A case where both sides of the object 10 are simultaneously processed will be described with reference to FIG.
When both surfaces (10A, 10B) of the object to be processed 10 are processed at the same time, the motors 28, 30 are moved to positions where the distances from the object 10 to be processed to both the electrode plates 16, 18 are substantially equal.
The carriages 24 and 26 are moved by. Next, processing chamber 4
After depressurizing the inside of the chamber to a predetermined pressure, the switches of the relays 32 and 34 are set to the terminal Ta side (power source side) while supplying the plasma source gas to the processing chamber 4 (see FIG. 1). As a result, an AC voltage is applied to each of the electrode plates 16 and 18. The phases of these AC voltages may be the same phase or opposite phases, or there may be a phase difference other than 180 °. On the other hand, since the rollers 20 and 22 are grounded as described above, both surfaces 10 of the workpiece 10 that are in contact with the rollers 20 and 22 are grounded.
The potentials A and 10B are also substantially equal to the ground potential. Therefore, plasma is efficiently generated on both sides of the object to be processed 10. As a result, the first surface 10A and the second surface 10B of the object to be processed 10 are simultaneously plasma-processed. The roller 2
Even if the object to be processed 10 is not set to the ground potential through 0 and 22, plasma can be efficiently generated on both sides of the object to be processed 10 by making the phases of the AC voltages applied to the electrode plates 16 and 18 opposite phases. it can.
【００１５】（片面処理）被処理物１０の片面だけを処
理する場合について図２を参照しながら説明する。例え
ば第一面１０Ａだけを処理したいときは、被処理物１０
が第一面１０Ａとは反対側の第二電極板１８に近接（距
離10mm以下）又は接触するような位置に来るまで、モー
タ２８、３０でキャリッジ２４、２６を移動させる。次
に、処理室４の内部を所定圧力まで減圧した後、プラズ
マ原料ガスを処理室４に供給しながら、リレー３２のス
イッチを端子Ｔａ側（電源側）に設定する一方、リレー
３４のスイッチを端子Ｔｂ側（接地側）に設定する。こ
の結果、第一の電極板１６には交流電圧が印加される一
方、第二の電極板１８は接地され、同電極板１８に近接
又は接触している被処理物１０もほぼ接地電位となる。
従って、被処理物１０の第一面１０Ａと第一の電極板１
８との間でプラズマが効率よく発生する。これにより、
被処理物１０の第一面１０Ａがプラズマ処理される。一
方、被処理物１０の第二面１０Ｂと第二の電極板１８と
の間には電位差がほとんどないため、両者の間にはプラ
ズマが発生せず、従って第二面１０Ｂはプラズマ処理さ
れない。(One-sided processing) A case where only one side of the object 10 is processed will be described with reference to FIG. For example, when it is desired to process only the first surface 10A, the object to be processed 10
The carriages 24, 26 are moved by the motors 28, 30 until the position comes close to (the distance is 10 mm or less) or contacts the second electrode plate 18 on the side opposite to the first surface 10A. Next, after depressurizing the inside of the processing chamber 4 to a predetermined pressure, while supplying the plasma source gas to the processing chamber 4, the switch of the relay 32 is set to the terminal Ta side (power supply side), while the switch of the relay 34 is turned on. Set to the terminal Tb side (ground side). As a result, an AC voltage is applied to the first electrode plate 16, the second electrode plate 18 is grounded, and the object 10 to be processed that is in proximity to or in contact with the first electrode plate 18 is also at substantially ground potential. .
Therefore, the first surface 10A of the workpiece 10 and the first electrode plate 1
Plasma is efficiently generated between the plasma and the plasma. This allows
The first surface 10A of the object to be processed 10 is plasma-processed. On the other hand, since there is almost no potential difference between the second surface 10B of the object to be processed 10 and the second electrode plate 18, plasma is not generated between the two and therefore the second surface 10B is not plasma-treated.
【００１６】なお、被処理物１０の第二面１０Ｂだけを
処理したいときは、被処理物１０の配置及びリレー３
２、３４の設定を図２とは逆にすればよい。すなわち、
被処理物１０を第一の電極板１６に近接又は接触させる
とともに、リレー３２のスイッチを端子Ｔｂ側（接地
側）に設定する一方、リレー３４のスイッチを端子Ｔａ
側（電源側）に設定することにより、被処理物１０の第
二面１０Ｂだけをプラズマ処理することができる。When it is desired to process only the second surface 10B of the object 10, the arrangement of the object 10 and the relay 3
The settings of 2, 34 may be reversed from those in FIG. That is,
The workpiece 10 is brought close to or in contact with the first electrode plate 16, and the switch of the relay 32 is set to the terminal Tb side (ground side), while the switch of the relay 34 is set to the terminal Ta.
By setting to the side (power supply side), only the second surface 10B of the object to be processed 10 can be plasma-processed.
【００１７】なお、電極板１６、１８の間の距離は、上
記のように被処理物１０を一方の電極板に近接又は接触
させた状態における被処理物１０と他方の電極板との間
の距離が15〜50mm程度の範囲に収まるように、予め定め
ておく。この範囲に前記距離が収まっていれば、その距
離に関わらず高いプラズマ処理効果が得られる。It should be noted that the distance between the electrode plates 16 and 18 is the distance between the object to be processed 10 and the other electrode plate when the object to be processed 10 is brought close to or in contact with one of the electrode plates as described above. It is set in advance so that the distance is within the range of 15 to 50 mm. If the distance is within this range, a high plasma processing effect can be obtained regardless of the distance.
【００１８】以上、本発明に係るプラズマ処理装置の一
実施例について図面を参照しながら説明したが、実施例
が上記に限られるものではないことは言うまでもない。
例えば、上記実施例ではローラ２０、２２の位置を変更
することにより電極板１６、１８及び被処理物１０の位
置関係を変更するようにしたが、リール１２、１４まで
含む被処理物１０の送り／巻き取り系全体を図１の矢印
Ａ３の方向に移動できるようにしてもよい。また、被処
理物１０を移動させるのではなく、電極板１６、１８を
移動させることにより被処理物１０と電極板１６、１８
との位置関係を変更するようにしてもよい。この場合、
両電極板１６、１８の相対位置を固定して両者が一緒に
移動するようにしてもよいし、電極板１６、１８を互い
に独立に移動可能にしてもよい。また、厚さの異なる複
数の電極板を用意しておき、例えば被処理物１０の第一
面１０Ａだけを処理したい場合には第二の電極板１８に
厚みの大きいものを使用することによって第二面１０Ｂ
と第二の電極板１８とを近接又は接触させるようにして
もよい。Although one embodiment of the plasma processing apparatus according to the present invention has been described above with reference to the drawings, it goes without saying that the embodiment is not limited to the above.
For example, in the above-described embodiment, the positional relationship between the electrode plates 16 and 18 and the workpiece 10 is changed by changing the positions of the rollers 20 and 22, but the workpiece 10 including the reels 12 and 14 is fed. / The entire winding system may be movable in the direction of arrow A3 in FIG. In addition, the object 10 and the electrode plates 16 and 18 are moved by moving the electrode plates 16 and 18 instead of moving the object 10.
The positional relationship with may be changed. in this case,
The relative positions of the two electrode plates 16 and 18 may be fixed so that they move together, or the electrode plates 16 and 18 may move independently of each other. In addition, if a plurality of electrode plates having different thicknesses are prepared and, for example, only the first surface 10A of the object to be processed 10 is desired to be processed, the second electrode plate 18 having a large thickness can be used. Two sides 10B
The second electrode plate 18 and the second electrode plate 18 may be brought close to or in contact with each other.
【図１】 本発明の一実施例であるプラズマ処理装置の
要部の概略構成図。FIG. 1 is a schematic configuration diagram of a main part of a plasma processing apparatus that is an embodiment of the present invention.
【図２】 被処理物の片面だけを処理する場合の被処理
物の配置及びリレーの設定を示す図。FIG. 2 is a diagram showing arrangement of an object to be processed and setting of a relay when only one side of the object to be processed is processed.
４…処理室 １０…被処理物 １２…送り出しリール １４…巻き取りリール １６、１８…電極板 ２０、２２…ローラ ２４、２６…キャリッジ ３２、３４…リレー ３６、３８…交流電源（低周波電源） ４０…制御装置 4 ... Processing room 10 ... Object to be processed 12 ... Delivery reel 14 ... Take-up reel 16, 18 ... Electrode plate 20, 22 ... Laura 24, 26 ... Carriage 32, 34 ... Relay 36, 38 ... AC power supply (low frequency power supply) 40 ... Control device
フロントページの続き (72)発明者 西原 康弘 京都市伏見区竹田藁屋町36番地 株式会社 サムコインターナショナル研究所内 (72)発明者 渡邊 敏広 京都市伏見区竹田藁屋町36番地 株式会社 サムコインターナショナル研究所内 Ｆターム(参考） 4K029 AA11 AA25 DC28 EA00 EA06 GA02 JA10 KA03 4K030 CA07 CA12 FA01 FA03 GA01 GA12 JA03 JA20 Continued front page (72) Inventor Yasuhiro Nishihara 36 Takeda Warayacho, Fushimi-ku, Kyoto Samco International Institute (72) Inventor Toshihiro Watanabe 36 Takeda Warayacho, Fushimi-ku, Kyoto Samco International Institute F-term (reference) 4K029 AA11 AA25 DC28 EA00 EA06 GA02 JA10 KA03 4K030 CA07 CA12 FA01 FA03 GA01 GA12 JA03 JA20
Claims (3)
室、 前記処理室内で帯状の被処理物を緊張状態に保持しつつ
該被処理物をその長さ方向に送るための送り機構、 前記処理室内で前記被処理物の第一面及び第二面にそれ
ぞれ対面するように配置された第一電極及び第二電極、 前記第一電極及び第二電極に交流電圧を印加するための
交流電源、及び、 前記第一電極に交流電圧が印加されるとともに前記第二
電極が接地される第一面処理モード、前記第二電極に交
流電圧が印加されるとともに前記第一電極が接地される
第二面処理モード、及び、両方の電極に交流電圧が印加
される両面処理モードの中から交流電圧の印加モードを
切り換えるためのスイッチ機構、を備えることを特徴と
するプラズマ処理装置。1. A processing chamber for plasma-treating an object to be processed, a feed mechanism for sending the object to be processed in a longitudinal direction while holding the belt-like object to be processed in a tension state in the processing chamber, A first electrode and a second electrode arranged so as to face the first surface and the second surface of the object to be processed in a processing chamber, and an AC power supply for applying an AC voltage to the first electrode and the second electrode. A first surface treatment mode in which an AC voltage is applied to the first electrode and the second electrode is grounded, and an AC voltage is applied to the second electrode and the first electrode is grounded A plasma processing apparatus comprising: a two-sided processing mode and a switch mechanism for switching an AC voltage application mode from a double-sided processing mode in which an AC voltage is applied to both electrodes.
極との間の距離を変更するための距離変更手段を更に備
えることを特徴とする請求項１に記載のプラズマ処理装
置。2. The plasma processing apparatus according to claim 1, further comprising distance changing means for changing a distance between the object to be processed and the first electrode and the second electrode.
対的に第二電極に近づける一方、第二面処理モードでは
前記被処理物を相対的に第一電極に近づけるように前記
距離変更手段を制御する制御手段を更に備えることを特
徴とする請求項２に記載のプラズマ処理装置。3. In the first surface processing mode, the distance is changed so that the object to be processed is relatively brought close to the second electrode, while in the second surface processing mode, the object to be processed is relatively brought close to the first electrode. The plasma processing apparatus according to claim 2, further comprising control means for controlling the means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002023118A JP2003221670A (en) | 2002-01-31 | 2002-01-31 | Plasma treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002023118A JP2003221670A (en) | 2002-01-31 | 2002-01-31 | Plasma treatment apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003221670A true JP2003221670A (en) | 2003-08-08 |
Family
ID=27745917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002023118A Pending JP2003221670A (en) | 2002-01-31 | 2002-01-31 | Plasma treatment apparatus |
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| Country | Link |
|---|---|
| JP (1) | JP2003221670A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010212028A (en) * | 2009-03-09 | 2010-09-24 | Epson Toyocom Corp | Plasma treatment device |
| JP2015084316A (en) * | 2013-09-17 | 2015-04-30 | 株式会社リコー | Plasma processing apparatus, printer, printing system, and manufacturing method of print |
| JP2015192991A (en) * | 2014-03-17 | 2015-11-05 | 株式会社リコー | Reformer of object to be treated, printer, printing system, and manufacturing method of printed matter |
-
2002
- 2002-01-31 JP JP2002023118A patent/JP2003221670A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010212028A (en) * | 2009-03-09 | 2010-09-24 | Epson Toyocom Corp | Plasma treatment device |
| JP2015084316A (en) * | 2013-09-17 | 2015-04-30 | 株式会社リコー | Plasma processing apparatus, printer, printing system, and manufacturing method of print |
| JP2015192991A (en) * | 2014-03-17 | 2015-11-05 | 株式会社リコー | Reformer of object to be treated, printer, printing system, and manufacturing method of printed matter |
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