JP2003215408A - Package for housing optical semiconductor element - Google Patents

Package for housing optical semiconductor element

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Publication number
JP2003215408A
JP2003215408A JP2002016156A JP2002016156A JP2003215408A JP 2003215408 A JP2003215408 A JP 2003215408A JP 2002016156 A JP2002016156 A JP 2002016156A JP 2002016156 A JP2002016156 A JP 2002016156A JP 2003215408 A JP2003215408 A JP 2003215408A
Authority
JP
Japan
Prior art keywords
optical semiconductor
optical
frame body
semiconductor element
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002016156A
Other languages
Japanese (ja)
Other versions
JP3881554B2 (en
Inventor
Mitsuo Yanagisawa
美津夫 柳沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
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Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2002016156A priority Critical patent/JP3881554B2/en
Publication of JP2003215408A publication Critical patent/JP2003215408A/en
Application granted granted Critical
Publication of JP3881554B2 publication Critical patent/JP3881554B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that when a metallic holder 13 with an optical fiber 12 fitted is welded to a fixation member 11 fixed to a frame body, loss of optical coupling is caused owing to strain by abruptly produced stress and optical coupling which is stable enough for an optical semiconductor device can not be obtained. <P>SOLUTION: The frame-shaped metallic member 9 is joined with the entire circumference of the lower end of the internal surface of a side part 5b of the frame body 5 with the outer circumferential surface in contact with the frame body 5 and a base body 3 across a solder material, and the solder material covers nearly the entire outer circumferential surface of a metallic member 9 and also forms a meniscus 15 in an oblique surface shape. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、光通信装置等に使
用する高出力の半導体レーザ（ＬＤ）やフォトダイオー
ド（ＰＤ）等の光半導体素子を収納するための光半導体
素子収納用パッケージに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element such as a high output semiconductor laser (LD) or photodiode (PD) used in an optical communication device or the like.

【０００２】[0002]

【従来の技術】従来の光通信分野で用いられる高周波信
号により作動するＬＤ，ＰＤ等の光半導体素子を収納す
るための光半導体素子収納用パッケージ（以下、光半導
体パッケージともいう）を図３に示す。2. Description of the Related Art FIG. 3 shows an optical semiconductor element housing package (hereinafter, also referred to as an optical semiconductor package) for housing optical semiconductor elements such as LDs and PDs, which are operated in the conventional optical communication field by high frequency signals. Show.

【０００３】同図に示すように、光半導体パッケージ１
は、一般に鉄（Ｆｅ）−ニッケル（Ｎｉ）−コバルト
（Ｃｏ）合金や銅（Ｃｕ）−タングステン（Ｗ）合金等
の金属から成る基体３を有する。この基体３は、内部で
発生した熱を効率良く外部に放熱する機能を有してい
る。また、光半導体パッケージ１は、上側主面にＬＤや
ＰＤ等の光半導体素子２が載置固定される載置部３ａを
有する基体３と、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合
金等の金属から成る枠体５とから主に構成されている。
枠体５は、載置部３ａを囲繞するように基体３の上側主
面に接合されている。この枠体５は、各種電子部品を囲
むとともに入出力端子４や光ファイバ12を取り付けるた
めのものである。枠体５の側部に設けられた入出力端子
４の取付部５ａには、光半導体素子２と外部電気回路
（図示せず）とを電気的に接続する絶縁端子である入出
力端子４が嵌着接合されている。As shown in FIG. 1, an optical semiconductor package 1
Generally has a base 3 made of a metal such as an iron (Fe) -nickel (Ni) -cobalt (Co) alloy or a copper (Cu) -tungsten (W) alloy. The base 3 has a function of efficiently radiating the heat generated inside to the outside. Further, the optical semiconductor package 1 includes a base 3 having a mounting portion 3a on which an optical semiconductor element 2 such as an LD or PD is mounted and fixed, and an Fe-Ni-Co alloy or an Fe-Ni alloy. It is mainly composed of a frame body 5 made of metal.
The frame body 5 is joined to the upper main surface of the base body 3 so as to surround the mounting portion 3a. The frame 5 is for surrounding various electronic components and for mounting the input / output terminal 4 and the optical fiber 12. The mounting portion 5a of the input / output terminal 4 provided on the side portion of the frame 5 is provided with an input / output terminal 4 which is an insulating terminal for electrically connecting the optical semiconductor element 2 and an external electric circuit (not shown). It is fitted and joined.

【０００４】また、枠体５には、他の側部に光半導体素
子２と光結合するための光伝送路である貫通穴10が形成
されている。この貫通穴10の枠体５外側開口の周囲に、
枠体５の熱膨張係数に近似した金属からなる筒状の光フ
ァイバ固定部材11（以下、固定部材ともいう）が銀ロウ
等のロウ材で接合されるか、または貫通穴10に固定部材
11が嵌着される。固定部材11には、戻り光防止用の光ア
イソレータ（図示せず）と光ファイバ12とが樹脂接着剤
等で接着された金属ホルダ13が固定されている。また、
固定部材11の内部には、非晶質ガラス等からなり集光レ
ンズとして機能するとともに光半導体パッケージ１内部
を気密に塞ぐ機能を有する透光性部材（図示せず）が固
定される。Further, the frame body 5 is formed with a through hole 10 which is an optical transmission line for optically coupling with the optical semiconductor element 2 on the other side portion. Around the outside opening of the frame body 5 of the through hole 10,
A cylindrical optical fiber fixing member 11 (hereinafter also referred to as a fixing member) made of a metal having a thermal expansion coefficient close to that of the frame body 5 is joined by a brazing material such as silver brazing, or the fixing member is fixed to the through hole 10.
11 is fitted. An optical isolator (not shown) for preventing return light and an optical fiber 12 are fixed to the fixing member 11 with a metal holder 13 bonded with a resin adhesive or the like. Also,
Inside the fixing member 11, a transparent member (not shown) made of amorphous glass or the like, which functions as a condenser lens and has a function of hermetically closing the inside of the optical semiconductor package 1, is fixed.

【０００５】また、固定部材11と金属ホルダ13とは、各
々の端面同士がレーザ溶接等により固定される。一方、
固定部材11と透光性部材とは、200〜400℃の融点を有す
る金（Ａｕ）−錫（Ｓｎ）合金等の低融点ロウ材により
ロウ付けして固定される。Further, the end faces of the fixing member 11 and the metal holder 13 are fixed by laser welding or the like. on the other hand,
The fixing member 11 and the translucent member are fixed by brazing with a low melting point brazing material such as gold (Au) -tin (Sn) alloy having a melting point of 200 to 400 ° C.

【０００６】また、光半導体素子２の下面にはペルチェ
素子等の電子冷却素子（図示せず）が配置されており、
光半導体素子２の作動時に電子冷却素子を冷却して光半
導体素子２の発熱による光出力の低下や寿命の低下を防
止する。さらに、載置部３ａ上には、光半導体素子２の
駆動用または信号増幅用のＬＳＩ等の半導体素子（図示
せず）が設けられる。半導体素子の下面にも電子冷却素
子またはヒートシンクを配設し得る。そして、光半導体
素子２の電極が、ボンディングワイヤを介して入出力端
子４の線路導体６に電気的に接続される。Further, an electronic cooling element (not shown) such as a Peltier element is arranged on the lower surface of the optical semiconductor element 2.
During operation of the optical semiconductor element 2, the electronic cooling element is cooled to prevent a decrease in optical output and a decrease in life due to heat generation of the optical semiconductor element 2. Further, a semiconductor element (not shown) such as an LSI for driving the optical semiconductor element 2 or for signal amplification is provided on the mounting portion 3a. An electronic cooling element or a heat sink may be arranged on the lower surface of the semiconductor element. Then, the electrode of the optical semiconductor element 2 is electrically connected to the line conductor 6 of the input / output terminal 4 via the bonding wire.

【０００７】また、入出力端子４は、セラミックスから
成る平板部７とその上面に設置された立壁部８とから成
る。平板部７の上面には、高周波信号の伝送路（入力線
路および／または出力線路）としてメタライズ金属層か
ら成る線路導体６が設けられている。この入出力端子４
は、外部電気回路と光半導体素子２とを電気的に接続す
るとともに光半導体パッケージ１の内部を気密に塞ぐた
めのものである。The input / output terminal 4 comprises a flat plate portion 7 made of ceramics and a standing wall portion 8 installed on the upper surface thereof. On the upper surface of the flat plate portion 7, a line conductor 6 made of a metallized metal layer is provided as a transmission line (input line and / or output line) for high frequency signals. This input / output terminal 4
Is for electrically connecting an external electric circuit and the optical semiconductor element 2 and hermetically closing the inside of the optical semiconductor package 1.

【０００８】そして、基体３の載置部３ａに光半導体素
子２を電子冷却素子を介して樹脂接着剤、ロウ材等の接
着剤により接着固定する。次に、光半導体素子２の電極
をボンディングワイヤを介して入出力端子４の線路導体
６に電気的に接続する。その後、光アイソレータと光フ
ァイバ12が固定された金属ホルダ13を固定部材11に溶接
する。次に、枠体５の上面に蓋体14をシーム溶接やロウ
付け等によって接合して、基体３と枠体５と蓋体14とか
らなる容器内部に光半導体素子２および半導体素子を気
密に収容して、製品としての光半導体装置となる。Then, the optical semiconductor element 2 is bonded and fixed to the mounting portion 3a of the base body 3 with an adhesive such as a resin adhesive or a brazing material via an electronic cooling element. Next, the electrode of the optical semiconductor element 2 is electrically connected to the line conductor 6 of the input / output terminal 4 via a bonding wire. Then, the metal holder 13 to which the optical isolator and the optical fiber 12 are fixed is welded to the fixing member 11. Next, the lid body 14 is joined to the upper surface of the frame body 5 by seam welding, brazing or the like to hermetically seal the optical semiconductor element 2 and the semiconductor element inside the container formed of the base body 3, the frame body 5 and the lid body 14. It is housed and becomes an optical semiconductor device as a product.

【０００９】このような光半導体装置は、例えば、外部
電気回路から供給される駆動用の高周波信号により光半
導体素子２を光励起させ、光励起されたレーザ光等の光
を透光性部材を通して光ファイバ12に授受させ、光ファ
イバ12内を伝送させることにより、大容量の情報を高速
に伝送できる光電変換装置として機能し、光通信分野等
に多用されている。In such an optical semiconductor device, for example, the optical semiconductor element 2 is photoexcited by a driving high frequency signal supplied from an external electric circuit, and the photoexcited laser light or the like is passed through an optical fiber through an optical fiber. By transmitting and receiving the data to and from the optical fiber 12 and transmitting it through the optical fiber 12, it functions as a photoelectric conversion device capable of transmitting a large amount of information at high speed, and is widely used in the optical communication field and the like.

【００１０】近年、携帯電話の普及、インターネットサ
ービスの急増を受けて、通信需要が急激に増加してお
り、光通信分野における光ファイバでの伝送容量を増す
技術の研究開発が進められている。とりわけ、光通信装
置において光信号が光伝送路を伝搬する際の損失を補償
すべく光信号を直接増幅する光増幅器が注目されてい
る。従来の光半導体装置の光信号の出力は150〜200ｍＷ
程度であり、搭載されている光信号を出力する光半導体
素子も１Ｗ程度の駆動電力であった。しかし、上記光増
幅器を用いた光半導体装置では、光信号の出力も300ｍ
Ｗレベルまで向上してきている。また、このような光半
導体装置に搭載されている光信号を出力する光半導体素
子も２Ｗレベルの駆動電力が要求されている。In recent years, with the spread of mobile phones and the rapid increase of Internet services, the demand for communication has been rapidly increasing, and research and development of a technique for increasing the transmission capacity of an optical fiber in the field of optical communication have been promoted. Particularly, in an optical communication device, an optical amplifier that directly amplifies an optical signal in order to compensate for a loss when the optical signal propagates through an optical transmission line is receiving attention. The output of the optical signal of the conventional optical semiconductor device is 150 to 200 mW
The optical power of the optical semiconductor element that outputs an optical signal is about 1 W. However, in the optical semiconductor device using the above optical amplifier, the optical signal output is 300 m.
It is improving to the W level. In addition, an optical semiconductor element that outputs an optical signal mounted on such an optical semiconductor device is also required to have a drive power of 2W level.

【００１１】従来より、作動時に光半導体素子２が発生
する多量の熱を冷却して光半導体素子２を常に適温に保
持し、光半導体素子２を長期にわたり安定に機能させる
ために各種冷却装置が設けられていた。例えば、光半導
体素子２の熱を効率良く放散するために、基体３にＣｕ
−Ｗ合金等の高熱伝導性の材料を使用したり、基体３と
光半導体素子２との間に電子冷却素子を設けることが行
なわれていた。しかしながら、電子冷却素子の熱が基体
３と枠体５とを介して光ファイバ12に伝達し、光ファイ
バ12に熱応力が加わり光軸がずれて光信号の劣化の原因
となることから、昨今の光半導体装置にはより安定した
光結合を維持することが要求されるようになっている。Conventionally, various cooling devices have been used to cool a large amount of heat generated by the optical semiconductor element 2 during operation to keep the optical semiconductor element 2 at an appropriate temperature at all times and to keep the optical semiconductor element 2 functioning stably for a long period of time. It was provided. For example, in order to efficiently dissipate the heat of the optical semiconductor element 2, the base 3 is made of Cu.
It has been practiced to use a material having high thermal conductivity such as -W alloy or to provide an electronic cooling element between the substrate 3 and the optical semiconductor element 2. However, the heat of the electronic cooling element is transferred to the optical fiber 12 via the base body 3 and the frame body 5, and thermal stress is applied to the optical fiber 12 to shift the optical axis, which causes deterioration of the optical signal. The above optical semiconductor device is required to maintain more stable optical coupling.

【００１２】そこで、光半導体装置の安定した光結合を
得るために、電子冷却素子等を設けること以外に、光半
導体素子２の発熱による基体３の変形を防止すべく基体
３に段差を設けて歪みを吸収することが提案されてい
る。Therefore, in order to obtain a stable optical coupling of the optical semiconductor device, a step is provided on the base body 3 in order to prevent the base body 3 from being deformed due to heat generation of the optical semiconductor element 2 in addition to providing an electronic cooling element or the like. It has been proposed to absorb strain.

【００１３】[0013]

【発明が解決しようとする課題】上記提案のように基体
に段差を設けた構造では、光半導体パッケージ１に電子
部品を実装する際の加熱による熱や、高出力のＬＤ，Ｐ
Ｄ等の光半導体素子２の発熱による歪み、あるいは光半
導体パッケージ１を外部電気回路基板にネジ止め固定す
る際の光半導体パッケージ１全体に加わる応力による光
学系の光軸のズレを解消することは可能となる。In the structure in which the step is provided on the base as in the above proposal, the heat generated by mounting the electronic component on the optical semiconductor package 1 and the high power LD, P
Distortion due to heat generation of the optical semiconductor element 2 such as D, or displacement of the optical axis of the optical system due to stress applied to the entire optical semiconductor package 1 when the optical semiconductor package 1 is screwed and fixed to an external electric circuit board is not resolved. It will be possible.

【００１４】しかしながら、光半導体装置を作製する
際、光ファイバ12を取着した金属ホルダ13は、枠体５に
固定された固定部材11の枠体５外側端面に各種レーザ等
で溶接される。そのために、固定部材11の溶接部の熱に
よって固定部材11が設けられた枠体５の一点に応力が集
中し、基体３に段差を設けた構造では、枠体５の一点に
集中した応力を緩和しきれずに枠体５が変形し、光結合
状態が大きくずれてしまう。その結果、さらに安定した
光結合を維持することが要求されている上記光増幅器を
用いた光半導体装置では、上記溶接により光出力が±0.
7ｄＢ以上と大きく劣化するという問題点があった。However, when manufacturing an optical semiconductor device, the metal holder 13 to which the optical fiber 12 is attached is welded to the outer end surface of the frame 5 of the fixing member 11 fixed to the frame 5 with various lasers or the like. Therefore, the stress concentrates on one point of the frame body 5 provided with the fixing member 11 due to the heat of the welding portion of the fixing member 11, and in the structure in which the step is provided on the base body 3, the stress concentrated on one point of the frame body 5 The frame body 5 is deformed without being fully relaxed, and the optical coupling state is largely deviated. As a result, in the optical semiconductor device using the optical amplifier, which is required to maintain more stable optical coupling, the light output is ± 0.
There is a problem that it is significantly deteriorated to 7 dB or more.

【００１５】従って、本発明は上記問題点に鑑みて完成
されたものであり、その目的は、光ファイバを取着した
金属ホルダを枠体に固定された固定部材に溶接する際に
発生する応力による歪みを大幅に緩和して光結合損失の
劣化を防止し、光半導体装置として安定した光結合が得
られる光半導体パッケージを提供することにある。Therefore, the present invention has been completed in view of the above-mentioned problems, and an object thereof is a stress generated when a metal holder having an optical fiber attached thereto is welded to a fixing member fixed to a frame. An object of the present invention is to provide an optical semiconductor package in which stable distortion due to optical coupling can be obtained by relieving the distortion caused by the above and preventing deterioration of optical coupling loss.

【００１６】[0016]

【課題を解決するための手段】本発明の光半導体素子収
納用パッケージは、上側主面に光半導体素子が載置され
る載置部を有する略四角形の基体と、該基体の前記上側
主面に前記載置部を囲繞するように取着され、一側部に
貫通孔または切欠き部から成る入出力端子の取付部が形
成された平面視形状が略四角形の枠体と、前記取付部に
嵌着された入出力端子と、前記枠体の他の側部に形成さ
れた貫通穴に嵌着されるかまたは前記貫通穴の枠体外側
開口の周囲に接合された筒状の光ファイバ固定部材とを
具備した光半導体素子収納用パッケージにおいて、前記
枠体の内面の下端の全周にロウ材を介して前記枠体およ
び前記基体に外周面が接するように枠状の金属部材が接
合されているとともに、前記ロウ材は前記金属部材の外
周面の略全面を覆うとともに斜面状のメニスカスを形成
していることを特徴とする。An optical semiconductor element accommodating package according to the present invention is a substantially rectangular base having an upper main surface on which an optical semiconductor element is mounted, and the upper main surface of the base. A frame body having a substantially quadrangular shape in plan view, which is attached so as to surround the mounting portion, and has a mounting portion for an input / output terminal formed of a through hole or a cutout portion on one side, and the mounting portion. And an input / output terminal fitted in the tubular body, and a tubular optical fiber fitted in a through hole formed in the other side portion of the frame body or joined around the frame body outside opening of the through hole. In a package for accommodating an optical semiconductor device including a fixing member, a frame-shaped metal member is bonded to the frame body and the base body so that their outer peripheral surfaces are in contact with the entire periphery of the lower end of the inner surface of the frame body through a brazing material. In addition, the brazing material covers substantially the entire outer peripheral surface of the metal member. Characterized in that it forms a slope-shaped meniscus with.

【００１７】本発明の光半導体素子収納用パッケージ
は、枠体の内面の下端の全周にロウ材を介して枠体およ
び基体に外周面が接するように枠状の金属部材が接合さ
れているとともに、ロウ材は金属部材の外周面の略全面
を覆うとともに斜面状のメニスカスを形成していること
から、光ファイバを取着した金属ホルダを枠体に固定さ
れた固定部材に溶接する際に急激に発生する枠体の一点
に集中した応力による歪みを大幅に緩和し、枠体の変形
を防いで光結合損失の劣化を効果的に防止する。In the package for accommodating an optical semiconductor element of the present invention, a frame-shaped metal member is joined to the entire periphery of the lower end of the inner surface of the frame body so that the outer peripheral surface is in contact with the frame body and the base body via the brazing material. At the same time, the brazing material covers almost the entire outer peripheral surface of the metal member and forms a sloped meniscus, so when welding the metal holder to which the optical fiber is attached to the fixing member fixed to the frame body. The distortion caused by the stress concentrated at one point of the frame body that is suddenly generated is significantly relieved, the deformation of the frame body is prevented, and the deterioration of the optical coupling loss is effectively prevented.

【００１８】また、ロウ材のメニスカスが、光半導体素
子収納用パッケージに電子部品を実装する際の加熱や高
出力のＬＤ，ＰＤ等の光半導体素子の熱に対しても枠体
および基体の歪みを吸収して、枠状の金属部材に応力集
中することも防ぐことができる。さらに、枠体の内面の
下端の全周と基体との隅部が枠状の金属部材により補強
されるので、光半導体素子収納用パッケージを外部電気
回路基板にネジ止め固定する際に徐々に加わるような応
力等による光学系の光軸のズレを生じることもない。従
って、光半導体素子と光ファイバとの間の安定した光結
合が維持でき、光半導体装置として光信号の出力の変動
を±0.3ｄＢ以下にすることができる。Also, the meniscus of the brazing material distorts the frame body and the base body against heat when mounting an electronic component in a package for housing an optical semiconductor element and heat of an optical semiconductor element such as a high-power LD or PD. It is also possible to prevent the concentration of stress on the frame-shaped metal member by absorbing the stress. Further, since the entire periphery of the lower end of the inner surface of the frame body and the corners of the base body are reinforced by the frame-shaped metal member, they are gradually added when the optical semiconductor element housing package is screwed and fixed to the external electric circuit board. The optical axis of the optical system is not displaced due to such stress. Therefore, stable optical coupling between the optical semiconductor element and the optical fiber can be maintained, and the fluctuation of the output of the optical signal as the optical semiconductor device can be suppressed to ± 0.3 dB or less.

【００１９】本発明の光半導体素子収納用パッケージ
は、好ましくは、前記金属部材の太さが前記枠体の厚さ
の２分の１を超えかつ前記枠体の厚さ未満であることを
特徴とする。In the optical semiconductor device accommodating package of the present invention, preferably, the thickness of the metal member is more than half the thickness of the frame and less than the thickness of the frame. And

【００２０】本発明の光半導体素子収納用パッケージ
は、上記の構成により、金属ホルダを固定部材に溶接固
定する際、例えばＹＡＧレーザで溶接固定した場合、そ
の出力を上げることができ、強固で気密な溶接が可能と
なる。そのため、溶接部の信頼性が増すとともに枠体全
体が強固となり、光ファイバを取着した金属ホルダを枠
体に固定された固定部材に溶接する際に急激に発生する
枠体の一点に集中した応力を光半導体素子収納用パッケ
ージ自体で抑制できる。その結果、光半導体素子の光出
力を効率良く光ファイバに伝達できる。また、枠状の金
属部材が熱的、機械的な応力によって枠体が変形しない
ように支持し、またその応力をロウ材のメニスカスによ
り分散することができる。その結果、光半導体素子収納
用パッケージに搭載された光半導体素子や光ファイバ等
の実装部品の光結合の変動をきわめて小さくすることが
できる。The package for accommodating an optical semiconductor element of the present invention has the above-mentioned structure, and when the metal holder is welded and fixed to the fixing member, for example, when the YAG laser is used for welding and fixing, the output thereof can be increased, and the package is strong and airtight. Welding is possible. Therefore, the reliability of the welded part is increased and the entire frame is strengthened, and it is concentrated on one point of the frame that is suddenly generated when the metal holder to which the optical fiber is attached is welded to the fixing member fixed to the frame. The stress can be suppressed by the package for storing the optical semiconductor element itself. As a result, the optical output of the optical semiconductor element can be efficiently transmitted to the optical fiber. Further, the frame-shaped metal member can support the frame body so as not to be deformed by thermal or mechanical stress, and the stress can be dispersed by the meniscus of the brazing material. As a result, it is possible to extremely reduce the fluctuation of the optical coupling of the mounted components such as the optical semiconductor element and the optical fiber mounted in the package for housing the optical semiconductor element.

【００２１】[0021]

【発明の実施の形態】本発明の光半導体素子収納用パッ
ケージについて以下に詳細に説明する。図１は本発明の
光半導体パッケージについて実施の形態の一例を示す断
面図であり、図２は図１の光半導体パッケージの固定部
材側からみた場合の断面図である。図１，図２におい
て、従来の光半導体パッケージを示す図３と同じ部材に
ついては同じ符号で示した。BEST MODE FOR CARRYING OUT THE INVENTION The optical semiconductor element housing package of the present invention will be described in detail below. 1 is a cross-sectional view showing an example of an embodiment of an optical semiconductor package of the present invention, and FIG. 2 is a cross-sectional view of the optical semiconductor package of FIG. 1 when viewed from the fixing member side. 1 and 2, the same members as those in FIG. 3 showing the conventional optical semiconductor package are denoted by the same reference numerals.

【００２２】図１，図２において、１は、基体３、枠体
５および枠体５の取付部５ａに嵌着された高周波信号入
出力用の入出力端子４から主に構成される光半導体パッ
ケージである。これらの基体３、枠体５、入出力端子
４、および光ファイバ12や透光性部材１６を設置固定す
る筒状の光ファイバ12の固定部材11とで、内部に光半導
体素子２を収容するための容器が構成される。そして、
基体３の上側主面の載置部３ａに光半導体素子２を載置
固定し、枠体５の上面に蓋体（図示せず）を接合して気
密に封止することにより光半導体装置となる。1 and 2, reference numeral 1 denotes an optical semiconductor mainly composed of a base body 3, a frame body 5, and an input / output terminal 4 for inputting / outputting a high-frequency signal, which is fitted to a mounting portion 5a of the frame body 5. It is a package. The optical semiconductor element 2 is housed inside by the base 3, the frame 5, the input / output terminal 4, and the cylindrical optical fiber 12 fixing member 11 for mounting and fixing the optical fiber 12 and the translucent member 16. A container for is constructed. And
The optical semiconductor element 2 is mounted and fixed on the mounting portion 3a on the upper main surface of the base body 3, and a lid (not shown) is bonded to the upper surface of the frame 5 to hermetically seal the optical semiconductor device. Become.

【００２３】本発明の光半導体パッケージ１には、枠体
５の側部５ｂの内面下端の全周にロウ材を介して枠体５
および基体３に外周面が接するように枠状の金属部材９
が接合されているとともに、ロウ材は金属部材９の外周
面の略全面を覆うとともに斜面状のメニスカス15を形成
している。ロウ材としては、融点が250〜900℃のものを
用いるのがよく、その場合光半導体パッケージに電子部
品を実装する際の熱に対しても金属部材９の接合強度が
損なわれることは無い。In the optical semiconductor package 1 of the present invention, the frame body 5 is provided with brazing material around the entire lower end of the inner surface of the side portion 5b of the frame body 5.
And the frame-shaped metal member 9 so that the outer peripheral surface is in contact with the base body 3.
The brazing material covers substantially the entire outer peripheral surface of the metal member 9 and forms a sloped meniscus 15. As the brazing material, it is preferable to use one having a melting point of 250 to 900 ° C. In that case, the bonding strength of the metal member 9 will not be impaired by the heat when mounting the electronic component on the optical semiconductor package.

【００２４】また、本発明の光半導体パッケージ１を構
成する光ファイバ12を取着した金属ホルダ13は、枠体５
に固定された固定部材11の外側端面に溶接されている。
この金属部材13と固定部材11との溶接には、高出力のＣ
Ｏ2 レーザやＹＡＧレーザ等が用いられる。特に、瞬時
に接合でき、溶解時間や照射時間等による光結合のずれ
を極力小さくでき、溶接の固定安定度の高いＹＡＧレー
ザ溶接が好適である。一般に、ＹＡＧレーザ溶接は、10
64ｎｍの近赤外線領域のレーザ光を用いる。そのため、
エネルギーを集中して瞬時に金属同士を接合することが
可能である。また、ＹＡＧレーザ溶接は接合材料等によ
り３〜６Ｊ（ジュール）の溶接条件にて上記のような接
合が可能である。The metal holder 13 to which the optical fiber 12 constituting the optical semiconductor package 1 of the present invention is attached is the frame body 5.
It is welded to the outer end surface of the fixing member 11 fixed to.
For welding the metal member 13 and the fixing member 11, a high output C
O 2 laser or YAG laser is used. In particular, YAG laser welding is suitable because it can be joined instantaneously, the deviation of optical coupling due to melting time, irradiation time, etc. can be minimized, and the fixing stability of welding is high. Generally, YAG laser welding has 10
Laser light in the near infrared region of 64 nm is used. for that reason,
It is possible to instantly join metals by concentrating energy. In addition, YAG laser welding can perform the above-described joining under welding conditions of 3 to 6 J (joule) depending on the joining material and the like.

【００２５】従って、レーザ溶接ではレーザ光のエネル
ギーが枠体５の一点、即ち固定部材11が設けられた部位
に集中して急激に応力を発生する。そのため枠体５全体
の応力バランスが急激に変化する。そこで、本発明の金
属部材９を設けることにより、そのような急激に生じる
歪みを大幅に緩和し抑制することが可能となる。Therefore, in the laser welding, the energy of the laser beam is concentrated on one point of the frame 5, that is, the portion where the fixing member 11 is provided, and the stress is suddenly generated. Therefore, the stress balance of the entire frame body 5 suddenly changes. Therefore, by providing the metal member 9 of the present invention, such abruptly generated strain can be significantly alleviated and suppressed.

【００２６】また、金属部材９を接合するロウ材は、そ
の融点が250℃未満では、光ファイバ12を取着した金属
ホルダ13を枠体５に固定された固定部材11に溶接する
際、急激に発生する応力の抑制効果が認められない。ま
た、光半導体パッケージ１に電子部品を実装する際の加
熱や各種信頼性評価時の温度履歴によりロウ材が軟化ま
たは溶融して金属部材９が動き出し、光半導体パッケー
ジ１内部の光学系の光軸のズレが生じる恐れがある。他
方、ロウ材の融点が900℃を超えると、ロウ付け時に、
基体３と枠体５、枠体５と入出力端子４および固定部材
11等を接合する各種接合材が溶融して気密不良を生じる
恐れがある。When the melting point of the brazing material for joining the metal member 9 is less than 250 ° C., when the metal holder 13 to which the optical fiber 12 is attached is welded to the fixing member 11 fixed to the frame 5, The effect of suppressing the stress generated in the is not recognized. Further, the brazing material is softened or melted due to heating when mounting an electronic component on the optical semiconductor package 1 and temperature history during various reliability evaluations, and the metal member 9 starts to move, and the optical axis of the optical system inside the optical semiconductor package 1 is moved. May be misaligned. On the other hand, if the melting point of the brazing material exceeds 900 ° C, when brazing,
Base 3 and frame 5, frame 5 and input / output terminal 4, and fixing member
There is a risk that various bonding materials that bond 11 etc. may melt and cause poor airtightness.

【００２７】上記融点を有するロウ材としては、銀12重
量％−ゲルマニウム88重量％、鉛５重量％−銀95重量
％、ＢＡｇ−１（ＪＩＳ．Ｚ．3261：銀45重量％−銅15
重量％−カドミウム24重量％−亜鉛16重量％）、ＢＡｇ
−４（ＪＩＳ．Ｚ．3261：銀40重量％−銅30重量％−亜
鉛28重量％−ニッケル２重量％）、ＢＡｇ−８ａ（ＪＩ
Ｓ．Ｚ．3261：銀72重量％−銅28重量％−リチウム0.2
重量％）、ＢＡｇ−13（ＪＩＳ．Ｚ．3261：銀54重量％
−銅40重量％−亜鉛５重量％−ニッケル１重量％）、Ｂ
Ａｇ−18（ＪＩＳ．Ｚ．3261：銀60重量％−銅30重量％
−錫10重量％−リン0.2５重量％）、ＢＡｇ−19（ＪＩ
Ｓ．Ｚ．3261：銀92.5重量％−銅7.2重量％−リチウム
0.2重量％）、ＢＡｇ−21（ＪＩＳ．Ｚ．3261：銀63重
量％−銅28.5重量％−錫６重量％−ニッケル2.5重量
％）、ＢＡｇ−23（ＪＩＳ．Ｚ．3261：銀85重量％−マ
ンガン15重量％）等が挙げられる。とりわけ、封止性、
メニスカスの形成のし易さ、製造上での取り扱い易さ、
環境問題等の観点から、ＢＡｇ−８ａおよびＢＡｇ−23
が好適である。As the brazing material having the above melting point, silver 12% by weight-germanium 88% by weight, lead 5% by weight-silver 95% by weight, BAg-1 (JIS.Z.3261: silver 45% by weight-copper 15)
% By weight-24% by weight cadmium-16% by weight zinc), BAg
-4 (JIS.Z.3261: 40% by weight silver-30% by weight copper-28% by weight zinc-2% by weight nickel), BAg-8a (JI
S. Z. 3261: 72 wt% silver-28 wt% copper-0.2 lithium
% By weight), BAg-13 (JIS.Z.3261: 54% by weight of silver)
-Copper 40% by weight-zinc 5% by weight-nickel 1% by weight), B
Ag-18 (JIS.Z.3261: 60% by weight silver-30% by weight copper)
-Tin 10% by weight-phosphorus 0.25% by weight), BAg-19 (JI
S. Z. 3261: Silver 92.5% by weight-Copper 7.2% by weight-Lithium
0.2% by weight), BAg-21 (JIS.Z.3261: 63% by weight silver-28.5% by weight copper-6% by weight tin-2.5% by weight nickel), BAg-23 (JIS.Z.3261: 85% by weight silver) -Manganese 15% by weight) and the like. Among other things, the sealability,
Ease of formation of meniscus, ease of handling in manufacturing,
From the viewpoint of environmental issues, BAg-8a and BAg-23
Is preferred.

【００２８】本発明において、ロウ材は、光ファイバ12
を取着した金属ホルダ13を枠体５の側部５ｂに取着した
固定部材11の端面とレーザ溶接する際に急激に発生する
応力を光半導体パッケージ１自体で効率よく抑制するた
めに、金属部材９の外周面から基体３および枠体５の表
面にかけて斜面状のメニスカス15（図２）を形成するこ
とが必要である。具体的には、図２に示すように、斜面
状のメニスカス15は、枠体５の側部５ｂの内面と金属部
材９の外周面との間に形成されるとともに基体３の上側
主面と金属部材９の外周面との間に形成されて、枠体５
の側部５ｂの内面下端部の全周から基体３の上側主面に
かけて全体として一つの斜面を成すように形成される。In the present invention, the brazing material is the optical fiber 12
In order to efficiently suppress the stress that is suddenly generated when laser welding the attached metal holder 13 to the end face of the fixing member 11 attached to the side portion 5b of the frame body 5 in the optical semiconductor package 1 itself, It is necessary to form an inclined meniscus 15 (FIG. 2) from the outer peripheral surface of the member 9 to the surfaces of the base body 3 and the frame body 5. Specifically, as shown in FIG. 2, the sloped meniscus 15 is formed between the inner surface of the side portion 5b of the frame body 5 and the outer peripheral surface of the metal member 9 and the upper main surface of the base body 3. Formed between the outer peripheral surface of the metal member 9 and the frame 5
Is formed so as to form one slope as a whole from the entire circumference of the lower end of the inner surface of the side portion 5b to the upper main surface of the base body 3.

【００２９】また、このようなメニスカス15は、光半導
体パッケージ１に電子部品を実装する際の加熱や、高出
力のＬＤやＰＤ等の光半導体素子２の熱による枠体５お
よび基体３の歪みに対しても吸収緩和する機能を有す
る。他に、光半導体パッケージ１を外部電気回路基板に
ネジ止め固定する際に徐々に加わる応力を分散して、金
属部材９の角部に応力が集中するのを解消するとともに
金属部材９を基体３および枠体５に強固に接合できる。
さらに基体３と枠体５との接合部に集中し易い応力を緩
和するように機能する。その結果、安定した光結合が得
られる。Further, such a meniscus 15 causes distortion of the frame body 5 and the base body 3 due to heating when mounting an electronic component on the optical semiconductor package 1 and heat of the optical semiconductor element 2 such as a high-power LD or PD. Also has a function of absorbing and relaxing. In addition, the stress that is gradually applied when the optical semiconductor package 1 is screwed and fixed to the external electric circuit board is dispersed so that the stress is not concentrated at the corners of the metal member 9 and the metal member 9 is used as the base body 3. And it can be firmly joined to the frame body 5.
Furthermore, it functions to relieve stress that tends to concentrate on the joint between the base body 3 and the frame body 5. As a result, stable optical coupling can be obtained.

【００３０】このメニスカス15は、金属ホルダ13を固定
部材11にレーザ溶接する際に急激に発生する応力を抑制
して光結合損失を防止する点で、その断面形状が曲率半
径0.01〜0.2ｍｍ程度の凹んだ円弧状をなすものが好ま
しい。なお、このような断面形状とすることにより、先
に詳細に述べた熱的あるいは機械的な応力の集中を効果
的に回避する点でも効果的である。また、このようなメ
ニスカス15を形成するために、金属部材９の表面を予め
エッチング処理等により粗面化しておくことが好まし
い。The meniscus 15 has a cross-sectional shape with a radius of curvature of about 0.01 to 0.2 mm in order to prevent the optical coupling loss by suppressing the stress generated abruptly when the metal holder 13 is laser-welded to the fixing member 11. It is preferable to have a concave arc shape. Note that such a cross-sectional shape is also effective in effectively avoiding the concentration of thermal or mechanical stress described in detail above. Further, in order to form such a meniscus 15, it is preferable that the surface of the metal member 9 is roughened in advance by etching treatment or the like.

【００３１】また、上記ロウ材は金属部材９の表面を覆
っているため、ロウ材のメニスカス15が金属部材９の表
面に境界を形成しないことから、応力の集中する起点が
形成されない。そのため、基体３および枠体５の表面か
ら金属部材９にかけてロウ材のメニスカス15により曲面
状の連続面となり、応力を効果的に分散することができ
る。この結果、上記ロウ材を用いて金属部材９を接合す
ることにより、光半導体パッケージ１が受ける各種熱応
力や外部応力に対しても、光半導体装置を組み立てる
際、金属ホルダ13を固定部材11に溶接する前の初期段階
の光信号出力に対する金属ホルダ13を固定部材11に溶接
した後の最終段階での光信号出力の変動が±0.3ｄＢ以
下となるように良好な光結合が維持できる。Further, since the brazing material covers the surface of the metal member 9, the meniscus 15 of the brazing material does not form a boundary on the surface of the metal member 9, so that the origin of stress concentration is not formed. Therefore, the meniscus 15 of the brazing material forms a curved continuous surface from the surface of the base 3 and the frame 5 to the metal member 9, and the stress can be effectively dispersed. As a result, by joining the metal member 9 using the brazing material, the metal holder 13 is fixed to the fixing member 11 when assembling the optical semiconductor device against various thermal stresses and external stresses that the optical semiconductor package 1 receives. Good optical coupling can be maintained so that the fluctuation of the optical signal output at the final stage after the metal holder 13 is welded to the fixing member 11 with respect to the optical signal output at the initial stage before welding is ± 0.3 dB or less.

【００３２】本発明の金属部材９は、Ｆｅ−Ｎｉ−Ｃｏ
合金，Ｆｅ−Ｎｉ合金，Ｃｕ−Ｗ合金等から成り、とり
わけ放熱効果を高めるためには熱伝導性に優れたＣｕ−
Ｗ合金が好ましい。また、金属部材９の断面形状は、表
面積が大きくロウ材が濡れ易く基体３および枠体５とメ
ニスカス15を形成し易いという点で、円形が好ましい
が、多角形等であってもよい。また、断面形状が円形の
金属部材９は、各種熱応力や機械的応力が集中し難いた
め好適である。The metal member 9 of the present invention is made of Fe-Ni-Co.
Alloys, Fe-Ni alloys, Cu-W alloys, etc., and particularly Cu- which has excellent thermal conductivity in order to enhance the heat radiation effect.
W alloys are preferred. Further, the cross-sectional shape of the metal member 9 is preferably circular in that the surface area is large and the brazing material is easily wetted to easily form the meniscus 15 with the base body 3 and the frame body 5, but a polygonal shape or the like may be used. Further, the metal member 9 having a circular cross-sectional shape is suitable because it is difficult for various thermal stresses and mechanical stresses to concentrate.

【００３３】また、金属部材９の太さ（図２のように断
面形状が円形の場合直径φ）は枠体５の厚さの２分の１
を超えかつ枠体５の厚さ未満であることが好ましい。金
属部材９の太さが枠体５の厚さｔ（図２）の２分の１以
下であれば、光半導体装置として初期段階での光信号出
力に対する最終段階の光信号出力の変動を±0.3ｄＢ以
内に収めることが困難となる。一方、金属部材９の太さ
が枠体５の厚さｔ以上になると、接合した金属部材９に
より枠体５が歪み、光半導体パッケージ１全体が変形す
ることになる。The thickness of the metal member 9 (diameter φ when the sectional shape is circular as shown in FIG. 2) is half the thickness of the frame body 5.
And the thickness of the frame body 5 is preferable. If the thickness of the metal member 9 is equal to or less than half the thickness t (FIG. 2) of the frame body 5, the fluctuation of the optical signal output at the final stage with respect to the optical signal output at the initial stage as the optical semiconductor device is ±. It is difficult to keep it within 0.3 dB. On the other hand, when the thickness of the metal member 9 is equal to or larger than the thickness t of the frame body 5, the joined metal member 9 causes the frame body 5 to be distorted and the entire optical semiconductor package 1 to be deformed.

【００３４】なお、金属部材９の断面形状が多角形であ
っても、その最大太さが枠体５の厚さｔの２分の１を超
えかつ枠体５の厚さｔ未満であれば同様の効果を奏す
る。Even if the cross-sectional shape of the metal member 9 is polygonal, if the maximum thickness is more than half the thickness t of the frame 5 and less than the thickness t of the frame 5. Has the same effect.

【００３５】本発明の光半導体パッケージ１は、金属か
らなる基体３と、その上側主面に光半導体素子２の載置
部３ａを囲むように接合され、入出力端子４の取付部５
ａを有する枠体５と、精密なインピーダンス制御が可能
な入出力端子４とを具備する。また、固定部材11の枠体
５外側の端面には、光ファイバ12と戻り光防止用の光ア
イソレータとが樹脂接着剤で接着された金属ホルダ13
が、ＹＡＧレーザ溶接等により接合される。さらに、光
半導体素子２の下面にはペルチェ素子等の電子冷却素子
17が配置されており、光半導体素子２の作動時にそれを
冷却する。The optical semiconductor package 1 of the present invention is joined to the base 3 made of metal and the upper main surface thereof so as to surround the mounting portion 3a of the optical semiconductor element 2 and the mounting portion 5 of the input / output terminal 4.
A frame 5 having a and an input / output terminal 4 capable of precise impedance control are provided. In addition, a metal holder 13 in which an optical fiber 12 and an optical isolator for preventing returning light are adhered by a resin adhesive to the end surface of the fixing member 11 outside the frame body 5.
Are joined by YAG laser welding or the like. Further, an electronic cooling element such as a Peltier element is provided on the lower surface of the optical semiconductor element 2.
17 is arranged and cools the optical semiconductor element 2 when it operates.

【００３６】また、載置部３ａ上には、光半導体素子２
の駆動用または信号増幅用のＬＳＩ等の半導体素子（図
示せず）が設けられ、半導体素子の下面にも電子冷却素
子17またはＣｕ−Ｗ合金からなるヒートシンクを配設し
得る。そして、光半導体素子２と半導体素子とをボンデ
ィングワイヤ、内部配線パターン（図示せず）等を介し
て接続し、半導体素子は入出力端子４にボンディングワ
イヤで接続される。そして、光半導体素子２の各電極
が、ボンディングワイヤを介して入出力端子４の枠体５
外側に設けられた外部リード端子18に電気的に接続され
る。The optical semiconductor element 2 is placed on the mounting portion 3a.
A semiconductor element (not shown) such as an LSI for driving or signal amplification is provided, and the electronic cooling element 17 or a heat sink made of a Cu—W alloy may be arranged on the lower surface of the semiconductor element. Then, the optical semiconductor element 2 and the semiconductor element are connected via a bonding wire, an internal wiring pattern (not shown), etc., and the semiconductor element is connected to the input / output terminal 4 by a bonding wire. Then, each electrode of the optical semiconductor element 2 is connected to the frame 5 of the input / output terminal 4 via the bonding wire.
It is electrically connected to an external lead terminal 18 provided on the outside.

【００３７】本発明の略四角形の基体３は、光半導体素
子２を支持する支持部材および光半導体素子２の熱を放
熱する放熱板として機能し、その上側主面の略中央部に
光半導体素子２を載置するための載置部３ａを有してい
る。載置部３ａには光半導体素子２が電子冷却素子17を
挟んでＡｕ−シリコン（Ｓｉ）ロウ材等の接着剤を介し
て接着固定されるとともに、この接着剤を介して光半導
体素子２の熱が載置部３ａに伝えられ、外部に効率よく
放熱され、光半導体素子２の作動性を良好にする。この
基体３は、Ｃｕ−Ｗ合金等の100Ｗ／ｍＫ以上の熱伝導
を有する金属からなる。例えば、Ｃｕ−Ｗ合金は多孔質
のタングステン焼結体に銅を含浸させる周知の製法によ
り作製される。The substantially quadrangular substrate 3 of the present invention functions as a supporting member for supporting the optical semiconductor element 2 and a heat radiating plate for radiating the heat of the optical semiconductor element 2, and the optical semiconductor element is provided in the substantially central portion of the upper main surface thereof. It has a mounting portion 3a for mounting the 2 thereon. The optical semiconductor element 2 is adhered and fixed to the mounting portion 3a with an adhesive such as Au-silicon (Si) brazing material sandwiching the electronic cooling element 17, and the optical semiconductor element 2 of the optical semiconductor element 2 is attached with this adhesive. The heat is transferred to the mounting portion 3a and is efficiently radiated to the outside, which improves the operability of the optical semiconductor element 2. The base 3 is made of a metal having a thermal conductivity of 100 W / mK or more, such as a Cu-W alloy. For example, a Cu-W alloy is produced by a well-known manufacturing method in which a porous tungsten sintered body is impregnated with copper.

【００３８】なお、基体３の表面には耐食性に優れかつ
ロウ材との濡れ性に優れる金属、具体的には厚さ0.5〜
９μmのＮｉ層と厚さ0.5〜５μｍのＡｕ層をメッキ法に
より順次被着させておくのが良く、基体３が酸化腐食す
るのを有効に防止できるとともに、基体３の上側主面で
光半導体素子２の下方に配される電子冷却素子17を強固
に接着固定することができる。On the surface of the substrate 3, a metal having excellent corrosion resistance and wettability with the brazing material, specifically, a thickness of 0.5 to
It is preferable that a Ni layer of 9 μm and an Au layer of 0.5 to 5 μm in thickness be sequentially deposited by a plating method so that the base body 3 can be effectively prevented from being oxidized and corroded, and the optical semiconductor is formed on the upper main surface of the base body 3. The electronic cooling element 17 arranged below the element 2 can be firmly adhered and fixed.

【００３９】また基体３は、その上側主面に光半導体素
子２の載置部３ａを囲むように平面視形状が略四角形の
枠体５が接合されており、枠体５の内側に光半導体素子
２を収容するための空所が形成される。この枠体５はＦ
ｅ−Ｎｉ−Ｃｏ合金やＣｕ−Ｗ合金等の金属から成る。
また枠体５は、その金属のインゴットに圧延加工や打ち
抜き加工等の従来周知の金属加工方法を施すことにより
所定形状に製作される。A frame 5 having a substantially quadrangular shape in plan view is joined to the upper main surface of the base 3 so as to surround the mounting portion 3a of the optical semiconductor element 2, and the optical semiconductor is provided inside the frame 5. A cavity is formed for accommodating the element 2. This frame 5 is F
It is made of a metal such as an e-Ni-Co alloy or a Cu-W alloy.
The frame body 5 is manufactured into a predetermined shape by subjecting the metal ingot to a conventionally known metal working method such as rolling or punching.

【００４０】次に、枠体５の側部５ｂに取付部５ａを、
他の側部に光透過用の貫通穴10を有するような形状に作
製される。この貫通穴10は、枠体５の側部に周知のドリ
ルによる孔開け加工により所定形状に形成される。さら
に、光半導体素子２と外部電気回路との電気的接続を行
う手段として、枠体５の内面の一部および外面の一部
に、ボンディングワイヤや外部リード端子18等を接続す
るための厚さ0.5〜９μmのＮｉ層や厚さ0.5〜５μmのＡ
ｕ層等の金属層をメッキ法により被着させておくと良
い。Next, the mounting portion 5a is attached to the side portion 5b of the frame body 5,
It is formed in a shape having a through hole 10 for transmitting light on the other side portion. The through hole 10 is formed in a predetermined shape on the side portion of the frame body 5 by punching with a well-known drill. Further, as means for electrically connecting the optical semiconductor element 2 and an external electric circuit, a thickness for connecting a bonding wire, an external lead terminal 18, etc. to a part of the inner surface and a part of the outer surface of the frame body 5. 0.5-9 μm Ni layer and 0.5-5 μm thick A
It is advisable to deposit a metal layer such as a u layer by a plating method.

【００４１】また、貫通穴10の枠体５外側開口の周囲に
一端が接合されるかまたは貫通穴10に挿通され外周面が
接合されて、固定部材11が枠体５に設けられる。この固
定部材11は、内部で光信号が伝送されるように筒状に形
成され、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金等の金
属から成り、銀ロウ等のロウ材を介して接合される。ま
た、固定部材11は、基体３と同様の加工法で所望の形状
に加工製作されるとともに、その表面に厚さ0.5〜９μ
ｍのＮｉ層や厚さ0.5〜５μｍのＡｕ層等の金属層をメ
ッキ法により被着させておくと良い。Further, the fixing member 11 is provided on the frame body 5 by joining one end around the outside opening of the frame body 5 of the through hole 10 or by inserting the through hole 10 and joining the outer peripheral surface thereof. The fixing member 11 is formed in a tubular shape so that an optical signal is transmitted inside, is made of a metal such as Fe-Ni-Co alloy or Fe-Ni alloy, and is joined through a brazing material such as silver brazing. It Further, the fixing member 11 is processed and manufactured into a desired shape by the same processing method as that of the base body 3, and the surface thereof has a thickness of 0.5 to 9 μm.
It is advisable to deposit a metal layer such as a Ni layer of m or an Au layer having a thickness of 0.5 to 5 μm by a plating method.

【００４２】また、固定部材11の内周面には、集光レン
ズとして機能するとともに光半導体パッケージ１の内部
を塞ぐ非晶質ガラス等からなる透光性部材16が、その接
合部の表面に形成されたメタライズ層を介して、200〜4
00℃の融点を有するＡｕ−Ｓｎ合金等の低融点のロウ材
で接合される。この透光性部材16は、熱膨張係数が４×
10-6〜12×10-6／℃（室温〜400℃）のサファイア（単
結晶アルミナ）や非晶質ガラス等からなり、球状、半球
状、凸レンズ状、ロッドレンズ状等とされ、外部のレー
ザ光等の光を光ファイバ12を伝わって光半導体素子２に
入力させる、または光半導体素子２で出力したレーザ光
等の光を光ファイバ12に入力させるための集光用部材で
ある。透光性部材16が、例えば結晶軸の存在しない非晶
質ガラスの場合、酸化珪素（ＳｉＯ2）、酸化鉛（Ｐｂ
Ｏ）を主成分とする鉛系、または硼酸系やケイ砂を主成
分とする硼珪酸系のものを用いる。A transparent member 16 made of amorphous glass or the like, which functions as a condenser lens and closes the inside of the optical semiconductor package 1, is provided on the inner peripheral surface of the fixing member 11 on the surface of its joint. 200-4 through the formed metallization layer
It is joined with a low melting point brazing material such as Au—Sn alloy having a melting point of 00 ° C. The translucent member 16 has a coefficient of thermal expansion of 4 ×.
It is made of sapphire (single crystal alumina) or amorphous glass with a temperature of 10 -6 to 12 x 10 -6 / ° C (room temperature to 400 ° C), and is spherical, hemispherical, convex lens-shaped, rod lens-shaped, etc. It is a condensing member for inputting light such as laser light to the optical semiconductor element 2 through the optical fiber 12 or inputting light such as laser light output from the optical semiconductor element 2 to the optical fiber 12. When the translucent member 16 is, for example, amorphous glass having no crystal axis, silicon oxide (SiO 2 ) or lead oxide (Pb) is used.
A lead-based material whose main component is O), or a borosilicate-based material whose main component is boric acid or silica sand is used.

【００４３】また、透光性部材16は、その熱膨張係数が
枠体５のそれと異なっていても、固定部材11が熱膨張差
による応力を吸収緩和するので、結晶軸が応力のために
ある方向に揃うことによって光の屈折率の変化を起こす
ことは発生し難い。従って、この透光性部材16を用いる
ことによって光半導体素子２と光ファイバ12との間の光
の結合効率を高くできる。Further, even if the coefficient of thermal expansion of the translucent member 16 is different from that of the frame 5, the fixing member 11 absorbs and relaxes the stress due to the difference in thermal expansion, so that the crystal axis is due to the stress. It is difficult to cause a change in the refractive index of light by aligning the directions. Therefore, by using this translucent member 16, the light coupling efficiency between the optical semiconductor element 2 and the optical fiber 12 can be increased.

【００４４】入出力端子４は、上面に線路導体６が形成
された略長方形の平板部７と、線路導体６を間に挟んで
平板部７の上面に接合され、枠体５の内外を遮断するよ
うに形成された略直方体の立壁部８とから成っている。
立壁部８は、その上面に接地導体が形成され、側面にそ
の接地導体を延出するように接地導体が形成されてい
る。また、平板部７および立壁部８は、酸化アルミニウ
ムセラミックス、窒化アルミニウムセラミックス、ガラ
スセラミックス等の誘電体から成る。The input / output terminal 4 is joined to a substantially rectangular flat plate portion 7 having a line conductor 6 formed on the upper surface thereof, and the upper surface of the flat plate portion 7 with the line conductor 6 interposed therebetween so as to block the inside and outside of the frame body 5. And a standing wall portion 8 having a substantially rectangular parallelepiped shape.
The standing wall portion 8 has a ground conductor formed on its upper surface and a ground conductor formed on its side surface so as to extend the ground conductor. The flat plate portion 7 and the standing wall portion 8 are made of a dielectric material such as aluminum oxide ceramics, aluminum nitride ceramics, glass ceramics.

【００４５】また、平板部７の上面の線路導体６や接地
導体はＷ，Ｍｏ，Ｍｎ等で形成されており、例えばＷ等
の粉末に有機溶剤、溶媒を添加混合して得た金属ペース
トを、平板部７および立壁部８用のセラミックグリーン
シートに従来周知のスクリーン印刷法により所定パター
ンに印刷塗布し、セラミックグリーンシートと同時焼成
することによって平板部７，立壁部８に形成される。線
路導体６の表面には、酸化防止のためとボンディングワ
イヤや外部リード端子18等を強固に接続するために、厚
さ0.5〜９μｍのＮｉ層や厚さ0.5〜５μｍのＡｕ層等の
金属層をメッキ法により被着させておくと良い。The line conductor 6 and the ground conductor on the upper surface of the flat plate portion 7 are made of W, Mo, Mn, etc. For example, a metal paste obtained by adding and mixing an organic solvent or a solvent to a powder of W or the like is used. The ceramic green sheets for the flat plate portion 7 and the standing wall portion 8 are printed and applied in a predetermined pattern by a conventionally known screen printing method, and the flat plate portion 7 and the standing wall portion 8 are formed by simultaneous firing with the ceramic green sheet. On the surface of the line conductor 6, a metal layer such as a Ni layer having a thickness of 0.5 to 9 μm or an Au layer having a thickness of 0.5 to 5 μm is provided for the purpose of preventing oxidation and firmly connecting the bonding wire, the external lead terminal 18 and the like. It is advisable to deposit by using the plating method.

【００４６】また、蓋体（図示せず）は、枠体５の上面
にシーム溶接等によって接合され、光半導体素子２を光
半導体パッケージ１内に封止する。A lid (not shown) is joined to the upper surface of the frame 5 by seam welding or the like to seal the optical semiconductor element 2 in the optical semiconductor package 1.

【００４７】本発明の光半導体パッケージ１は、ＬＤ，
ＰＤ等の光半導体素子２およびＬＳＩ等の半導体素子を
収納した光通信用の場合、枠体５を基体３に接合した
後、枠状の金属部材９を枠体５の側部５ｂの内面下端の
全周にロウ材で接合する。次に、枠体５の側部５ｂに予
め形成された枠体５の内外を貫通する貫通穴10の枠体５
外側開口の周囲に金属からなる筒状の固定部材11を接合
し、固定部材11の内側に光半導体素子２と光ファイバ12
との間で光を集光させ結合させる透光性部材16を接合す
る。そして、光半導体素子２と半導体素子とをボンディ
ングワイヤによって接続し、半導体素子と入出力端子４
の線路導体６の一端とをボンディングワイヤによって接
続した後、枠体５の上面に蓋体をシーム溶接等によって
接合する。しかる後、固定部材11の枠体５外側端面に、
光ファイバ12と戻り光防止用のアイソレータとが樹脂接
着剤で接着された金属ホルダ13を、ＹＡＧレーザ溶接等
で接合することによって、製品としての光半導体装置と
なる。The optical semiconductor package 1 of the present invention comprises an LD,
In the case of optical communication in which an optical semiconductor element 2 such as a PD and a semiconductor element such as an LSI are housed, after the frame body 5 is bonded to the base body 3, the frame-shaped metal member 9 is attached to the lower end of the inner surface of the side portion 5b of the frame body 5. The whole circumference is joined with brazing material. Next, the frame body 5 of the through hole 10 penetrating the inside and outside of the frame body 5 formed in advance on the side portion 5b of the frame body 5
A cylindrical fixing member 11 made of metal is joined around the outer opening, and the optical semiconductor element 2 and the optical fiber 12 are provided inside the fixing member 11.
A light-transmissive member (16) for condensing and coupling the light is bonded between and. Then, the optical semiconductor element 2 and the semiconductor element are connected by a bonding wire, and the semiconductor element and the input / output terminal 4 are connected.
After connecting one end of the line conductor 6 to the bonding wire, a lid is joined to the upper surface of the frame 5 by seam welding or the like. Then, on the frame 5 outer end surface of the fixing member 11,
An optical semiconductor device as a product is obtained by joining the metal holder 13 in which the optical fiber 12 and the return light preventing isolator are bonded with a resin adhesive, by YAG laser welding or the like.

【００４８】かくして、本発明の光半導体パッケージ
は、枠体５の側部５ｂの内面下端の全周にロウ材を介し
て枠体５および基体３に外周面が接するように枠状の金
属部材９が接合されているとともに、ロウ材は金属部材
９の外周面の略全面を覆うとともに斜面状のメニスカス
15を形成していることにより、金属ホルダ13と固定部材
11とを溶接する際、溶接部から枠体５の一点に急激に発
生する応力が枠状の金属部材９により強固に補強された
枠体５で効果的に抑制される。その結果、光結合の劣化
が防止でき、光半導体装置として本発明の光半導体パッ
ケージ１を組み込んだ際、光半導体素子２の光出力を効
率良く光ファイバ12に伝達することができる。Thus, the optical semiconductor package of the present invention is a frame-shaped metal member in which the outer peripheral surface is in contact with the frame body 5 and the base body 3 via the brazing material on the entire periphery of the inner surface lower end of the side portion 5b of the frame body 5. 9 is joined, and the brazing material covers substantially the entire outer peripheral surface of the metal member 9 and has a meniscus in the shape of a slope.
By forming 15, the metal holder 13 and the fixing member
When welding 11 and 11, the stress that is suddenly generated at one point of the frame body 5 from the welded portion is effectively suppressed by the frame body 5 that is strongly reinforced by the frame-shaped metal member 9. As a result, deterioration of optical coupling can be prevented, and when the optical semiconductor package 1 of the present invention is incorporated as an optical semiconductor device, the optical output of the optical semiconductor element 2 can be efficiently transmitted to the optical fiber 12.

【００４９】また、金属部材９に加わる熱応力や外部応
力等が緩和され、金属部材９には応力が集中することが
無い。その結果、光半導体パッケージ１の内部の光結合
にズレを生じることがなく、光半導体パッケージ１を外
部電気回路基板にネジ止め固定する際に徐々に加わる応
力をも効果的に分散して、光半導体素子２を正常かつ安
定に作動させることができる。Further, the thermal stress and external stress applied to the metal member 9 are alleviated, and the stress is not concentrated on the metal member 9. As a result, the optical coupling inside the optical semiconductor package 1 is not displaced, and the stress gradually applied when the optical semiconductor package 1 is screwed and fixed to the external electric circuit board is effectively dispersed, and The semiconductor element 2 can be operated normally and stably.

【００５０】[0050]

【実施例】本発明の光半導体パッケージの実施例を以下
に説明する。EXAMPLES Examples of the optical semiconductor package of the present invention will be described below.

【００５１】図１，図２の光半導体パッケージ１の光結
合損失を以下のようにして評価した。先ず、光半導体パ
ッケージ１を以下の工程［１］〜［６］のようにして作
製した。The optical coupling loss of the optical semiconductor package 1 shown in FIGS. 1 and 2 was evaluated as follows. First, the optical semiconductor package 1 was manufactured by the following steps [1] to [6].

【００５２】［１］縦約13ｍｍ×横約30ｍｍのＣｕ−Ｗ
合金から成る略四角形の基体３の上側主面の外周部に載
置部３ａを囲むように、縦約13ｍｍ×横約20ｍｍのＦｅ
−Ｎｉ−Ｃｏ合金から成る平面視形状が略四角形の枠体
５を銀ロウで接合した。なお、基体３および枠体５の表
面には厚さ約２μｍのＮｉメッキ層および厚さ約0.5μ
ｍのＡｕメッキ層が順次被着されており、また枠体５の
側部５ｂで対向する側部５ｂに入出力端子４の取付部５
ａ、その側部５ｂに隣接する他の側部５ｂに貫通穴10が
形成されている。[1] Cu-W having a length of about 13 mm and a width of about 30 mm
Fe having a length of about 13 mm and a width of about 20 mm is formed on the outer peripheral portion of the upper main surface of the substantially rectangular base body 3 made of an alloy so as to surround the mounting portion 3a.
A frame body 5 made of —Ni—Co alloy and having a substantially quadrangular shape in plan view was joined with silver solder. The surface of the base body 3 and the frame body 5 had a Ni plating layer with a thickness of about 2 μm and a thickness of about 0.5 μm.
m Au plating layers are sequentially deposited, and the mounting portion 5 of the input / output terminal 4 is mounted on the side portion 5b of the frame body 5 facing the side portion 5b.
a, a through hole 10 is formed in the other side portion 5b adjacent to the side portion 5b.

【００５３】［２］枠状の金属部材９を枠体５の側部５
ｂの内面下端の全周にロウ材で接合した。金属部材９は
Ｃｕ−Ｗ合金から成り、その断面形状は円形であり、太
さ（直径）は0.8ｍｍ（枠体５の厚さは１ｍｍ）とし
た。また、ロウ材としては融点が約770℃のＢＡｇ−８
ａを用いた。そして、この場合、断面形状が曲率半径約
0.1ｍｍの凹んだ円弧状となっているロウ材のメニスカ
ス15が形成された。[2] The frame-shaped metal member 9 is attached to the side portion 5 of the frame body 5.
The whole inner circumference of the bottom of b was joined with a brazing material. The metal member 9 is made of a Cu-W alloy, has a circular cross-sectional shape, and has a thickness (diameter) of 0.8 mm (the thickness of the frame body 5 is 1 mm). As a brazing material, BAg-8 having a melting point of about 770 ° C.
a was used. And in this case, the cross-sectional shape is about radius of curvature.
A meniscus 15 of brazing material having an arc shape with a recess of 0.1 mm was formed.

【００５４】［３］枠体５の対向する側部５ｂの取付部
５ａに、それぞれアルミナセラミックスから成る入出力
端子５を銀ロウで嵌着接合した。入出力端子５の平板部
７の上面には、枠体５内外を導通するようにＭｏ−Ｍｎ
のメタライズ層上に厚さ約２μｍのＮｉメッキ層および
厚さ約0.5μｍのＡｕメッキ層を順次被着して成る線路
導体６を形成した。[3] The input / output terminals 5 each made of alumina ceramics were fitted and joined to the mounting portions 5a of the opposite side portions 5b of the frame body 5 with silver solder. On the upper surface of the flat plate portion 7 of the input / output terminal 5, Mo-Mn is provided so that the inside and outside of the frame body 5 are electrically connected.
A line conductor 6 was formed by sequentially depositing a Ni plating layer having a thickness of about 2 μm and an Au plating layer having a thickness of about 0.5 μm on the metallized layer of 1).

【００５５】［４］枠体５の側部５ｂの貫通穴10の枠体
５外側開口の周囲にＦｅ−Ｎｉ−Ｃｏ合金からなる筒状
の固定部材11を銀ロウで接合し、固定部材11の内側に鉛
系ガラスから成る球状の透光性部材16をＡｕ−Ｓｎ合金
ロウ材で接合した。[4] A cylindrical fixing member 11 made of an Fe—Ni—Co alloy is joined with a silver solder around the outer opening of the frame body 5 of the through hole 10 of the side portion 5 b of the frame body 5, and the fixing member 11 is fixed. A spherical light-transmitting member 16 made of lead-based glass was joined to the inside of the substrate with an Au—Sn alloy brazing material.

【００５６】［５］ＬＤである光半導体素子２と信号増
幅用のＬＳＩである半導体素子とを、載置部３ａ上のペ
ルチェ素子の上面にＡｕ−Ｓｉロウ材で載置接合すると
ともにボンディングワイヤで相互に接続し、さらに半導
体素子と入出力端子４の線路導体６の一端とをボンディ
ングワイヤで接続した。[5] The optical semiconductor element 2 which is an LD and the semiconductor element which is an LSI for signal amplification are mounted and bonded with an Au—Si brazing material on the upper surface of the Peltier element on the mounting portion 3a, and a bonding wire is also attached. And the semiconductor element and one end of the line conductor 6 of the input / output terminal 4 were connected by a bonding wire.

【００５７】［６］固定部材11の枠体５外側端面に、光
ファイバ12と戻り光防止用のアイソレータとが樹脂接着
剤で接着された金属ホルダ13を、５ＪのＹＡＧレーザで
溶接で接合した。[6] A metal holder 13 in which an optical fiber 12 and an isolator for preventing returning light are adhered to each other by a resin adhesive to the outer end surface of the frame 5 of the fixing member 11 is welded with a 5J YAG laser. .

【００５８】そして、上記のように作製した、金属ホル
ダ13を固定部材11に溶接する前の光半導体パッケージ１
の試料Ａに、光源からの光信号の出力を0.2ｍＷとし、
波長が1310ｎｍの光を通して光パワーメータで光結合状
態を確認した。そのときの光出力を基準として、金属ホ
ルダ13を固定部材11に溶接した後の試料Ａの光結合損失
を評価した。Then, the optical semiconductor package 1 manufactured as described above before the metal holder 13 is welded to the fixing member 11.
In the sample A of, the optical signal output from the light source is 0.2 mW,
The optical coupling state was confirmed with an optical power meter through the light having a wavelength of 1310 nm. Using the light output at that time as a reference, the optical coupling loss of Sample A after welding the metal holder 13 to the fixing member 11 was evaluated.

【００５９】また、比較例として、枠体５の側部５ｂの
内面下端に金属部材９を接合しない以外は上記実施例と
同様に作製した試料Ｂ、および枠体５の固定部材11側の
側部の内面下端のみに金属部材９を接合した以外は上記
実施例と同様に作製した試料Ｃを準備し、上記と同様に
して光結合損失を評価した。In addition, as a comparative example, sample B manufactured in the same manner as in the above-mentioned example except that the metal member 9 was not joined to the lower end of the inner surface of the side portion 5b of the frame body 5, and the side of the frame body 5 on the fixing member 11 side. Sample C prepared in the same manner as in the above example except that the metal member 9 was bonded only to the lower end of the inner surface of the portion, and the optical coupling loss was evaluated in the same manner as above.

【００６０】その結果、試料Ａ〜Ｃの各10個について、
比較例の試料Ｂ，Ｃではいずれも光結合損失が±0.5ｄ
Ｂを超えており、0.7ｄＢにも及ぶものが試料Ｂではそ
の内２個、試料Ｃでは１個あった。それに対して、本発
明の試料Ａでは、全て光結合損失は±0.5ｄＢ以内であ
り、ＹＡＧレーザ溶接の前後で光結合状態の変動が大幅
に抑制されていることが確認できた。As a result, for each of 10 samples A to C,
In the comparative samples B and C, the optical coupling loss is ± 0.5d in both cases.
The number of samples exceeding B and reaching 0.7 dB was two in sample B and one in sample C. On the other hand, in the sample A of the present invention, the optical coupling loss was all within ± 0.5 dB, and it was confirmed that the fluctuation of the optical coupling state was significantly suppressed before and after the YAG laser welding.

【００６１】また、上記Ｃｕ−Ｗ合金から成り、断面形
状が円形である金属部材９の太さ（直径）を0.3ｍｍ〜
1.2ｍｍの範囲の種々の値（0.3mm，0.5mm，0.8ｍｍ，1.
0ｍｍ，1.2ｍｍ）とし、厚さが１mmの枠体５を用いて他
は上記試料Ａと同様にして作製した５種の試料Ｄを準備
した。そして、これらは断面形状が曲率半径約0.1ｍｍ
の凹んだ円弧状となっているロウ材のメニスカス15が形
成されていることを確認した。これらの試料Ｄについて
上記試料Ａと同様にして光結合損失を評価した。その結
果、試料Ｄにおいて金属部材９の直径が0.3mmのもので
は光結合損失は±0.4dＢ、0.5mmで±0.3ｄB、0.8ｍｍで
±0.3dＢ、1.0ｍｍで±0.4dＢ、1.2ｍｍで±0.5dＢであ
った。このことから、金属部材９の太さが枠体５の厚さ
の2分の１を超え、かつ枠体５の厚さ未満であることが
光結合損失が最も小さいことが明らかとなった。Further, the thickness (diameter) of the metal member 9 made of the above Cu-W alloy and having a circular cross-sectional shape is 0.3 mm to.
Various values in the range of 1.2 mm (0.3 mm, 0.5 mm, 0.8 mm, 1.
0 mm, 1.2 mm) and 5 mm of sample D prepared in the same manner as sample A except that the frame 5 having a thickness of 1 mm was used. The cross-sectional shape of these is about 0.1 mm radius of curvature.
It was confirmed that the brazing metal meniscus 15 having a concave arc shape was formed. The optical coupling loss of these samples D was evaluated in the same manner as the sample A. As a result, in the sample D, when the diameter of the metal member 9 is 0.3 mm, the optical coupling loss is ± 0.4 dB, 0.5 mm is ± 0.3 dB, 0.8 mm is ± 0.3 dB, 1.0 mm is ± 0.4 dB, and 1.2 mm is ± 0.4 dB. It was 0.5 dB. From this, it was clarified that the optical coupling loss was smallest when the thickness of the metal member 9 was more than half the thickness of the frame 5 and less than the thickness of the frame 5.

【００６２】また、本発明の光半導体パッケージ１の枠
体５の上面に蓋体をシーム溶接によって接合した光半導
体装置に、外部の駆動装置の駆動信号を印加して、光半
導体素子２を光励起させ、発生したレーザ光の光出力を
光出力メータで計測した。次に、光半導体装置を−40℃
から85℃の温度サイクル試験装置にセットし、初期段階
の光出力と最終段階の光出力との変動をモニターした。
このとき、まず放熱特性が250Ｗ／ｍＫのＣｕ−Ｗ合金
から成る基体３を使用し、初期特性として印加電圧を25
0Ｗ、駆動電流を400ｍＡとしたときの光出力を100％と
した。次に、駆動電流を10ｍＡで光出力を0.1％、50ｍ
Ａで6.9％、100ｍＡで21.8％、200ｍＡで50.8％、300ｍ
Ａで78.47％とした各場合における光出力の変動を求め
た。その結果、いずれの場合も±0.1ｄＢ以内であっ
た。また、放熱特性が180Ｗ／ｍＫのＣｕ−Ｗ合金から
成る基体３を使用して同様に光出力の変動を求めたが、
いずれも±0.3ｄＢ以内であった。Further, a drive signal from an external driving device is applied to the optical semiconductor device in which the lid is joined to the upper surface of the frame body 5 of the optical semiconductor package 1 of the present invention by seam welding to optically excite the optical semiconductor element 2. Then, the optical output of the generated laser light was measured with an optical output meter. Next, place the optical semiconductor device at -40 ° C
Set to a temperature cycle tester of 85 to 85 ° C., and monitored the fluctuation between the light output in the initial stage and the light output in the final stage.
At this time, first, the substrate 3 made of a Cu-W alloy having a heat dissipation characteristic of 250 W / mK is used, and the applied voltage is 25
The optical output was set to 100% when the driving current was 400 mA at 0 W. Next, drive current 10mA, optical output 0.1%, 50m
6.9% for A, 21.8% for 100mA, 50.8% for 200mA, 300m
The fluctuation of the optical output in each case was set to 78.47% for A. As a result, in all cases, it was within ± 0.1 dB. Further, the fluctuation of the light output was similarly obtained by using the substrate 3 made of a Cu-W alloy having a heat dissipation property of 180 W / mK.
All were within ± 0.3 dB.

【００６３】なお、本発明は上記実施の形態および実施
例に限定されず、本発明の要旨を逸脱しない範囲内で種
々の変更を行うことは何等支障ない。The present invention is not limited to the above embodiments and examples, and various modifications can be made without departing from the scope of the present invention.

【００６４】[0064]

【発明の効果】本発明の光半導体素子収納用パッケージ
は、枠体の内面の下端の全周にロウ材を介して枠体およ
び基体に外周面が接するように枠状の金属部材が接合さ
れているとともに、ロウ材は金属部材の外周面の略全面
を覆うとともに斜面状のメニスカスを形成していること
により、光ファイバを取着した金属ホルダを枠体に固定
された固定部材に溶接する際に急激に発生する枠体の一
点に集中した応力による歪みを大幅に緩和し、枠体の変
形を防いで光結合損失の劣化を効果的に防止する。In the package for accommodating an optical semiconductor element of the present invention, a frame-shaped metal member is bonded to the entire periphery of the lower end of the inner surface of the frame body so that the outer peripheral surface is in contact with the frame body and the base body through the brazing material. At the same time, the brazing material covers almost the entire outer peripheral surface of the metal member and forms a sloped meniscus, so that the metal holder having the optical fiber attached thereto is welded to the fixing member fixed to the frame body. Distortion due to stress concentrated at one point of the frame body which is suddenly generated at this time is largely relieved, deformation of the frame body is prevented, and deterioration of optical coupling loss is effectively prevented.

【００６５】また、ロウ材のメニスカスが、光半導体素
子収納用パッケージに電子部品を実装する際の加熱や高
出力のＬＤ，ＰＤ等の光半導体素子の熱に対しても枠体
および基体の歪みを吸収して、枠状の金属部材に応力集
中することも防ぐことができる。さらに、枠体の内面の
下端の全周と基体との隅部が枠状の金属部材により補強
されるので、光半導体素子収納用パッケージを外部電気
回路基板にネジ止め固定する際に徐々に加わるような応
力等による光学系の光軸のズレを生じることもない。従
って、光半導体素子と光ファイバとの間の安定した光結
合が維持でき、光半導体装置として光信号の出力の変動
を±0.3ｄＢ以下にすることができる。Also, the meniscus of the brazing material distorts the frame body and the base body against the heat of mounting the electronic parts in the package for accommodating the optical semiconductor element and the heat of the optical semiconductor element such as LD and PD of high output. It is also possible to prevent the concentration of stress on the frame-shaped metal member by absorbing the stress. Further, since the entire periphery of the lower end of the inner surface of the frame body and the corners of the base body are reinforced by the frame-shaped metal member, they are gradually added when the optical semiconductor element housing package is screwed and fixed to the external electric circuit board. The optical axis of the optical system is not displaced due to such stress. Therefore, stable optical coupling between the optical semiconductor element and the optical fiber can be maintained, and the fluctuation of the output of the optical signal as the optical semiconductor device can be suppressed to ± 0.3 dB or less.

【００６６】本発明の光半導体素子収納用パッケージ
は、好ましくは、金属部材の太さが枠体の厚さの２分の
１を超えかつ枠体の厚さ未満であることにより、金属ホ
ルダを固定部材に溶接固定する際、例えばＹＡＧレーザ
で溶接固定した場合、その出力を上げることができ、強
固で気密な溶接が可能となる。そのため、溶接部の信頼
性が増すとともに枠体全体が強固となり、光ファイバを
取着した金属ホルダを枠体に固定された固定部材に溶接
する際に急激に発生する枠体の一点に集中した応力を光
半導体素子収納用パッケージ自体で抑制できる。その結
果、光半導体素子の光出力を効率良く光ファイバに伝達
できる。また、枠状の金属部材が熱的、機械的な応力に
よって枠体が変形しないように支持し、またその応力を
ロウ材のメニスカスにより分散することができる。その
結果、光半導体素子収納用パッケージに搭載された光半
導体素子や光ファイバ等の実装部品の光結合の変動をき
わめて小さくすることができる。In the optical semiconductor element accommodating package of the present invention, the metal holder preferably has a thickness of more than half the thickness of the frame and less than the thickness of the frame so that the metal holder is When welding and fixing to the fixing member, for example, when welding and fixing with a YAG laser, the output can be increased, and strong and airtight welding can be performed. Therefore, the reliability of the welded part is increased and the entire frame is strengthened, and it is concentrated on one point of the frame that is suddenly generated when the metal holder to which the optical fiber is attached is welded to the fixing member fixed to the frame. The stress can be suppressed by the package for storing the optical semiconductor element itself. As a result, the optical output of the optical semiconductor element can be efficiently transmitted to the optical fiber. Further, the frame-shaped metal member can support the frame body so as not to be deformed by thermal or mechanical stress, and the stress can be dispersed by the meniscus of the brazing material. As a result, it is possible to extremely reduce the fluctuation of the optical coupling of the mounted components such as the optical semiconductor element and the optical fiber mounted in the package for housing the optical semiconductor element.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の光半導体素子収納用パッケージについ
て実施の形態の一例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of an embodiment of an optical semiconductor element housing package of the present invention.

【図２】本発明の光半導体素子収納用パッケージの光フ
ァイバ固定部材側からみた断面図である。FIG. 2 is a cross-sectional view of the package for storing an optical semiconductor element of the present invention as seen from the optical fiber fixing member side.

【図３】従来の光半導体素子収納用パッケージの分解斜
視図である。FIG. 3 is an exploded perspective view of a conventional package for storing optical semiconductor elements.

【符号の説明】[Explanation of symbols]

１：光半導体素子収納用パッケージ ２：光半導体素子 ３：基体 ３ａ：載置部 ４：入出力端子 ５：枠体 ５ａ：入出力端子の取付部 ５ｂ：側部 ９：金属部材 10：貫通穴 11：光ファイバ固定部材 15：メニスカス 1: Package for storing optical semiconductor elements 2: Optical semiconductor element 3: Base 3a: Placement part 4: Input / output terminal 5: frame 5a: Mounting part for input / output terminals 5b: side part 9: Metal member 10: Through hole 11: Optical fiber fixing member 15: Meniscus

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 上側主面に光半導体素子が載置される載
置部を有する略四角形の基体と、該基体の前記上側主面
に前記載置部を囲繞するように取着され、一側部に貫通
孔または切欠き部から成る入出力端子の取付部が形成さ
れた平面視形状が略四角形の枠体と、前記取付部に嵌着
された入出力端子と、前記枠体の他の側部に形成された
貫通穴に嵌着されるかまたは前記貫通穴の枠体外側開口
の周囲に接合された筒状の光ファイバ固定部材とを具備
した光半導体素子収納用パッケージにおいて、前記枠体
の内面の下端の全周にロウ材を介して前記枠体および前
記基体に外周面が接するように枠状の金属部材が接合さ
れているとともに、前記ロウ材は前記金属部材の外周面
の略全面を覆うとともに斜面状のメニスカスを形成して
いることを特徴とする光半導体素子収納用パッケージ。1. A substantially quadrangular base body having a mounting portion on which an optical semiconductor element is mounted on an upper main surface, and the mounting base is attached to the upper main surface of the base body so as to surround the mounting portion. A frame body having a substantially quadrangular shape in a plan view, in which a mounting portion for an input / output terminal formed of a through hole or a cutout portion is formed in a side portion, an input / output terminal fitted in the mounting portion, and another frame body. A tubular optical fiber fixing member fitted into a through hole formed in a side portion of the through hole or joined to the periphery of the frame body outside opening of the through hole. A frame-shaped metal member is joined to the entire circumference of the lower end of the inner surface of the frame body via a brazing material so that the outer peripheral surface is in contact with the frame body and the base body, and the brazing material is the outer peripheral surface of the metal member. Is characterized by covering almost the entire surface and forming a sloped meniscus. Package for storing optical semiconductor devices. 【請求項２】 前記金属部材の太さが前記枠体の厚さの
２分の１を超えかつ前記枠体の厚さ未満であることを特
徴とする請求項１記載の光半導体素子収納用パッケー
ジ。2. The optical semiconductor element accommodating device according to claim 1, wherein the thickness of the metal member is more than half the thickness of the frame body and less than the thickness of the frame body. package.
JP2002016156A 2002-01-24 2002-01-24 Optical semiconductor element storage package and optical semiconductor device Expired - Fee Related JP3881554B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002016156A JP3881554B2 (en) 2002-01-24 2002-01-24 Optical semiconductor element storage package and optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002016156A JP3881554B2 (en) 2002-01-24 2002-01-24 Optical semiconductor element storage package and optical semiconductor device

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Publication Number Publication Date
JP2003215408A true JP2003215408A (en) 2003-07-30
JP3881554B2 JP3881554B2 (en) 2007-02-14

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Country Link
JP (1) JP3881554B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020031944A1 (en) * 2018-08-09 2020-08-27 パナソニックセミコンダクターソリューションズ株式会社 Semiconductor light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020031944A1 (en) * 2018-08-09 2020-08-27 パナソニックセミコンダクターソリューションズ株式会社 Semiconductor light emitting device
CN112438000A (en) * 2018-08-09 2021-03-02 新唐科技日本株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
CN112438000B (en) * 2018-08-09 2022-05-13 新唐科技日本株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

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