JP2003152231A - Thermoelectric element module, package for housing semiconductor element, and semiconductor module - Google Patents
Thermoelectric element module, package for housing semiconductor element, and semiconductor moduleInfo
- Publication number
- JP2003152231A JP2003152231A JP2001352827A JP2001352827A JP2003152231A JP 2003152231 A JP2003152231 A JP 2003152231A JP 2001352827 A JP2001352827 A JP 2001352827A JP 2001352827 A JP2001352827 A JP 2001352827A JP 2003152231 A JP2003152231 A JP 2003152231A
- Authority
- JP
- Japan
- Prior art keywords
- thermoelectric element
- module
- convex portion
- semiconductor
- metal member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、主に光通信分野に
おいて使用される、温度制御可能な熱電素子を備えた熱
電素子モジュール、ならびにこの熱電素子モジュールを
具備する半導体素子収納用パッケージ、およびこの熱電
素子モジュールを具備する半導体モジュールに関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric element module including a thermoelectric element capable of controlling temperature, which is mainly used in the field of optical communication, and a package for accommodating a semiconductor element, which includes the thermoelectric element module. The present invention relates to a semiconductor module including a thermoelectric element module.
【０００２】[0002]
【従来の技術】近年、インターネットや電子メールに代
表されるデータトラフィックが非常な速さで急増してい
る。この情報量の増加および高速化に対応するため、有
線伝送では光ファイバを用いた光通信が、低損失かつ広
帯域といった利点を有して導入されている。2. Description of the Related Art In recent years, data traffic typified by the Internet and electronic mail has rapidly increased at a very high speed. In order to cope with the increase in the amount of information and the increase in speed, optical communication using an optical fiber has been introduced in wired transmission with the advantages of low loss and wide bandwidth.
【０００３】光通信では、その信号源として一般的に半
導体レーザ素子（ＬＤ）が用いられるが、このＬＤは使
用状態でかなりの熱を発生し、この熱のためにＬＤ自体
が劣化するとともに発振波長が不安定となることから、
ＬＤを発振波長が安定するような温度に保つために熱電
素子モジュールが多く用いられている。In optical communication, a semiconductor laser element (LD) is generally used as a signal source of the LD. However, this LD generates a considerable amount of heat in use, and this heat deteriorates the LD itself and oscillates. Since the wavelength becomes unstable,
Thermoelectric element modules are often used to maintain the LD at a temperature at which the oscillation wavelength is stable.
【０００４】熱電素子モジュールは、図４に断面図で示
すように、複数の熱電素子31を並列に並べて、これらを
金属部材34を介して電気的に直列に接続した構成となっ
ている。熱電素子31にはＰ型熱電素子とＮ型熱電素子と
があり、上記構成においてＰ型熱電素子とＮ型熱電素子
とは交互に並べられて直列に接続されており、ここに電
流を流すと、ペルチエ効果によりＮ型熱電素子からＰ型
熱電素子の方向へ電流が流れる側の金属部材34では吸熱
が起こり、Ｐ型熱電素子からＮ型熱電素子の方向へ電流
が流れる側の金属部材34では発熱が起こる。つまり、熱
電素子モジュールは電流量に応じて熱電素子モジュール
の一端の温度が低下して他端の温度が上昇し、また、電
流の方向を逆とすることにより、この熱現象が逆転する
というものである。As shown in the sectional view of FIG. 4, the thermoelectric element module has a structure in which a plurality of thermoelectric elements 31 are arranged in parallel and are electrically connected in series via a metal member 34. The thermoelectric element 31 includes a P-type thermoelectric element and an N-type thermoelectric element, and in the above configuration, the P-type thermoelectric element and the N-type thermoelectric element are alternately arranged and connected in series. In the metal member 34 on the side where the current flows from the N-type thermoelectric element to the P-type thermoelectric element due to the Peltier effect, heat absorption occurs, and on the metal member 34 on the side where the current flows from the P-type thermoelectric element to the N-type thermoelectric element. Fever occurs. In other words, in the thermoelectric element module, the temperature at one end of the thermoelectric element module decreases and the temperature at the other end rises according to the amount of current, and by reversing the direction of the current, this thermal phenomenon is reversed. Is.
【０００５】この熱電素子モジュールは、通常は熱電素
子モジュールの温度が低下する側にＬＤを搭載してＬＤ
を冷却するのに用いられ、使用環境の温度が低い場合に
は熱電素子モジュールの温度が上昇する側にＬＤを搭載
してＬＤを加熱するのに用いられ、いずれの場合もＬＤ
を発振波長が安定するような温度に保つように作用す
る。In this thermoelectric element module, an LD is usually mounted on the side where the temperature of the thermoelectric element module decreases.
It is used for cooling the LD, and is used for heating the LD by mounting the LD on the side where the temperature of the thermoelectric element module rises when the temperature of the use environment is low.
To keep the oscillation wavelength at a stable temperature.
【０００６】熱電素子モジュールにおいて、金属部材34
には、金属部材34自身の電気抵抗が大きいと発熱が大き
くなるため通常は銅（Ｃｕ）が用いられる。また、熱電
素子31を並列に並べて挟み込むための基板が必要であ
り、上下に一対の絶縁体基板32を有している。その絶縁
体基板32には酸化アルミニウム質焼結体・窒化アルミニ
ウム質焼結体・炭化珪素質焼結体等の電気絶縁材料等が
使用される。In the thermoelectric element module, the metal member 34
For this, copper (Cu) is usually used because the heat generation increases when the electric resistance of the metal member 34 itself is large. In addition, a substrate is required for arranging and sandwiching the thermoelectric elements 31 in parallel, and has a pair of upper and lower insulator substrates 32. The insulating substrate 32 is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, or a silicon carbide sintered body.
【０００７】このような熱電素子モジュールを用いて、
図５に断面図で示すように、ＬＤ等の半導体素子16が熱
電素子モジュール30の上にフォトダイオード19およびレ
ンズ組立体18等とともに金属基板17を介して搭載され、
この熱電素子モジュール30が基体11の上面の載置部11ａ
に載置されて、基体11と、基体11の上面に載置部11ａを
囲繞するようにして接合された枠体12と、枠体12の上面
に載置部11ａを覆うように取着される蓋体13とから成る
パッケージに収納されることにより半導体モジュールが
完成し、この半導体モジュールが光通信の発振装置とし
て用いられる。By using such a thermoelectric element module,
As shown in a sectional view in FIG. 5, a semiconductor element 16 such as an LD is mounted on a thermoelectric element module 30 together with a photodiode 19 and a lens assembly 18 via a metal substrate 17.
This thermoelectric element module 30 is mounted on the mounting portion 11a on the upper surface of the base 11.
Mounted on the base 11, the frame body 12 joined to the upper surface of the base body 11 so as to surround the mounting portion 11a, and attached to the upper surface of the frame body 12 so as to cover the mounting portion 11a. The semiconductor module is completed by being housed in a package including the lid body 13 and the semiconductor module is used as an oscillation device for optical communication.
【０００８】図５に示す半導体モジュールは、半導体素
子16等が搭載された熱電素子モジュール30が載置された
載置部11ａを上面に有する基体11と戴置部11ａを囲繞す
るようにして基体11の上面に接合された枠体12とから成
るパッケージ本体と、枠体12の上面に抵抗溶接等により
接合されて取着された蓋体13と、半導体素子16と光軸を
合わせて枠体12に取着された光ファイバ21取付用の挿通
管23とにより構成される。パッケージ本体の枠体12には
光ファイバ21が接合される筒状の挿通管23が設けてあ
り、挿通管23のパッケージ内部側の端部には、サファイ
アやガラス等の透光性材料から成る透明窓20が設置さ
れ、蓋体13が取着される際に、パッケージ内部を真空状
態あるいは窒素等の不活性ガスの充填状態にして密封さ
れている。In the semiconductor module shown in FIG. 5, a base 11 having a mounting portion 11a on which a thermoelectric element module 30 having a semiconductor element 16 and the like mounted thereon and a mounting portion 11a are surrounded. A package body composed of a frame body 12 joined to the upper surface of 11, a lid body 13 joined and attached to the upper surface of the frame body 12 by resistance welding or the like, a frame body with the optical axis aligned with the semiconductor element 16. And an insertion tube 23 for attaching the optical fiber 21 attached to 12. The frame body 12 of the package body is provided with a cylindrical insertion tube 23 to which the optical fiber 21 is joined, and the end portion of the insertion tube 23 on the package inner side is made of a transparent material such as sapphire or glass. The transparent window 20 is installed, and when the lid 13 is attached, the inside of the package is sealed in a vacuum state or filled with an inert gas such as nitrogen.
【０００９】[0009]
【発明が解決しようとする課題】熱電素子モジュール30
は、部品の使用目的から、一方の絶縁体基板32側で何か
を冷却すると同時に必ず熱電素子モジュール30の逆の側
の絶縁体基板32から放熱する必要があり、そのために必
ず別の部品と組み合わせて用いられる。前述の例では、
片側の絶縁体基板32上に金属基板17を介して温度制御す
べき半導体素子16等の半導体素子を搭載し、反対側の絶
縁体基板32をパッケージ本体の基体11へ取り付けられて
いる。[Problems to be solved by the invention] Thermoelectric element module 30
For the purpose of use of the component, it is necessary to cool something on one side of the insulating substrate 32 and at the same time always radiate heat from the insulating substrate 32 on the opposite side of the thermoelectric element module 30. Used in combination. In the example above,
A semiconductor element such as a semiconductor element 16 whose temperature is to be controlled is mounted on an insulator substrate 32 on one side via a metal substrate 17, and the insulator substrate 32 on the opposite side is attached to a base 11 of the package body.
【００１０】しかしながら、従来の熱電素子モジュール
30は、絶縁体基板32がアルミナセラミックスから成り、
金属部材34がＣｕから成るものが主体である。このた
め、金属基板17・パッケージベースの基体11および熱電
素子モジュール30の絶縁体基板32等の素材接合間に素材
間の熱膨張率の違いから応力が発生するが、特に強度の
弱い熱電素子31と金属部材34間の半田等のロウ材33に応
力が集中することが問題となっており、結果として、長
期間にわたるヒートサイクル試験を行なうと熱電素子31
と金属部材34間のロウ材33にクラックが入り、直列に接
続されている熱電素子31への通電が不安定となるため、
温度制御を行なう熱電素子モジュール30として安定に動
作させることができなくなり、その性能が低下してしま
うという問題点があった。However, the conventional thermoelectric module
In 30, the insulating substrate 32 is made of alumina ceramics,
The metal member 34 is mainly made of Cu. For this reason, stress is generated due to the difference in the coefficient of thermal expansion between the materials such as the metal substrate 17, the package base substrate 11 and the insulator substrate 32 of the thermoelectric element module 30. The stress is concentrated on the brazing material 33 such as solder between the metal member 34 and the metal member 34. As a result, when a heat cycle test is performed for a long period of time, the thermoelectric element 31
A crack enters the brazing material 33 between the metal member 34 and the metal member 34, and the energization of the thermoelectric elements 31 connected in series becomes unstable,
There has been a problem that the thermoelectric element module 30 for controlling the temperature cannot be stably operated and its performance is deteriorated.
【００１１】このような熱電素子モジュール30を載置し
たパッケージにＬＤ等の半導体素子16を搭載した半導体
モジュールを用いると、半導体素子16の温度制御が不十
分となるため半導体素子16自体が劣化するとともに発振
波長が不安定となり、その結果、光通信の安定した光源
として使用できなくなるという問題点があった。When a semiconductor module in which a semiconductor element 16 such as an LD is mounted in a package in which the thermoelectric element module 30 is mounted is used, the temperature control of the semiconductor element 16 becomes insufficient and the semiconductor element 16 itself deteriorates. At the same time, the oscillation wavelength becomes unstable, and as a result, it cannot be used as a stable light source for optical communication.
【００１２】本発明は上記問題点に鑑み案出されたもの
で、その目的は、金属部材に熱電素子を強固に接続させ
るとともに金属部材に接合された熱電素子を長期間にわ
たり正常かつ安定に動作させることができる熱電素子モ
ジュールを提供することにある。The present invention has been devised in view of the above problems, and an object thereof is to firmly connect a thermoelectric element to a metal member and operate the thermoelectric element joined to the metal member normally and stably for a long period of time. It is to provide a thermoelectric element module that can be operated.
【００１３】また、本発明の他の目的は、この熱電素子
モジュールを用いることにより熱電素子モジュールに搭
載される半導体素子を長期間にわたり正常かつ安定に動
作させることができる半導体収納用パッケージおよび半
導体モジュールを提供することにある。Another object of the present invention is to use this thermoelectric element module to allow a semiconductor element mounted on the thermoelectric element module to operate normally and stably for a long period of time, and a semiconductor module. To provide.
【００１４】[0014]
【課題を解決するための手段】本発明の熱電素子モジュ
ールは、一対の絶縁体基板の間に、複数個の熱電素子の
両端がそれぞれ金属部材を介在させて接合されて成り、
前記絶縁体基板の一方に半導体素子が搭載される熱電素
子モジュールであって、前記金属部材は、前記熱電素子
にロウ材または接着剤を介して接合され、前記熱電素子
の端面にこの端面より小さな面積の凸部で当接するとと
もに、この凸部の周囲とこれに対向する前記端面との間
に前記ロウ材または接着剤の溜まり部を形成しているこ
とを特徴とするものである。The thermoelectric element module of the present invention comprises a pair of insulating substrates, and both ends of a plurality of thermoelectric elements are joined together with metal members interposed therebetween.
A thermoelectric element module in which a semiconductor element is mounted on one side of the insulating substrate, wherein the metal member is bonded to the thermoelectric element via a brazing material or an adhesive, and the metal member is smaller than the end surface on the end surface of the thermoelectric element. It is characterized in that the brazing material or the adhesive is formed in contact with the convex portion of the area and between the peripheral portion of the convex portion and the end surface facing the convex portion.
【００１５】また、本発明の熱電素子モジュールは、上
記構成において、前記凸部の高さが50μｍ以上かつ500
μｍ以下であり、前記熱電素子の前記端面の面積に対す
る前記凸部の上面の面積の比率が40％以上かつ70％以下
であることを特徴とするものである。In the thermoelectric element module of the present invention, in the above structure, the height of the convex portion is 50 μm or more and 500 or more.
The ratio of the area of the upper surface of the convex portion to the area of the end face of the thermoelectric element is 40% or more and 70% or less.
【００１６】本発明の半導体素子収納用パッケージは、
基体と、この基体の上面の載置部に他方の前記絶縁体基
板を当接させて載置された上記構成の熱電素子モジュー
ルと、前記基体の上面に前記載置部を囲繞するようにし
て接合された枠体と、この枠体の上面に前記載置部を覆
うように取着される蓋体とを具備することを特徴とする
ものである。The package for housing a semiconductor device of the present invention is
A base body, the thermoelectric element module having the above-mentioned configuration mounted by placing the other insulating substrate in contact with the mounting portion on the upper surface of the base body, and enclosing the mounting portion on the upper surface of the base body. It is characterized by comprising a joined frame body and a lid body attached to the upper surface of the frame body so as to cover the placing portion.
【００１７】本発明の半導体モジュールは、上記構成の
半導体素子収納用パッケージと、前記熱電素子モジュー
ルの一方の前記絶縁体基板に搭載された半導体素子と、
前記枠体の上面に取着された前記蓋体とを具備すること
を特徴とするものである。A semiconductor module of the present invention is a package for housing a semiconductor element having the above structure, a semiconductor element mounted on one of the insulating substrates of the thermoelectric element module,
The lid body attached to the upper surface of the frame body.
【００１８】本発明の熱電素子モジュールによれば、熱
電素子の端面と金属部材の凸部の側面と凸部の周囲の金
属部材の表面との間に十分な量のロウ材または接着剤の
溜まり部となる適度な容積の空間が形成されるとともに
この空間および熱電素子の端面と凸部が設けられた金属
部材の表面との間にロウ材または接着剤が充填介在して
溜まり部を形成することとなり、その結果、凸部を設け
た金属部材への熱電素子のロウ材または接着剤を介して
の接合が三次元的となって熱電素子を金属部材へ極めて
強固に接続させることができるため、熱電素子モジュー
ルを長期間にわたり正常かつ安定に動作させることがで
きる。According to the thermoelectric element module of the present invention, a sufficient amount of brazing material or adhesive is accumulated between the end surface of the thermoelectric element, the side surface of the convex portion of the metal member, and the surface of the metal member around the convex portion. A space having an appropriate volume is formed as a portion, and a brazing material or an adhesive is filled between the end surface of the thermoelectric element and the surface of the metal member provided with the convex portion to form a pool. As a result, the joining of the thermoelectric element to the metal member provided with the convex portion via the brazing material or the adhesive becomes three-dimensional, and the thermoelectric element can be extremely strongly connected to the metal member. The thermoelectric element module can be operated normally and stably for a long period of time.
【００１９】また、本発明の熱電素子モジュールによれ
ば、凸部の高さを50μｍ以上かつ500μｍ以下とするこ
とにより、熱電素子の端面と金属部材の凸部の側面と凸
部の周囲の金属部材の表面との間に形成される空間に必
要かつ十分な量のロウ材または接着剤を充填して適度な
溜まり部を形成し、熱電素子を凸部が設けられた金属部
材の表面に強固に接合させることが可能となる。また、
熱電素子の端面の面積に対する凸部の上面の面積の比率
を40％以上かつ70％以下とすることにより、熱電素子か
ら金属部材への熱移動またはその逆の熱移動を効率よく
行なわせることができ、効率のよい温度制御を行なうこ
とができるものとなる。Further, according to the thermoelectric element module of the present invention, by setting the height of the convex portion to be 50 μm or more and 500 μm or less, the end face of the thermoelectric element, the side surface of the convex portion of the metal member, and the metal surrounding the convex portion are formed. Fill the space formed with the surface of the member with a necessary and sufficient amount of brazing material or adhesive to form an appropriate pool, and secure the thermoelectric element on the surface of the metal member with the convex portion. It is possible to bond to. Also,
By setting the ratio of the area of the upper surface of the convex portion to the area of the end surface of the thermoelectric element to 40% or more and 70% or less, heat transfer from the thermoelectric element to the metal member or vice versa can be efficiently performed. Therefore, the temperature can be controlled efficiently.
【００２０】また、本発明の熱電素子モジュールをその
内部に載置した本発明の半導体素子収納用パッケージ、
および本発明の半導体素子収納用パッケージに半導体素
子を搭載し蓋体を取着した本発明の半導体モジュールに
よれば、半導体素子と熱電モジュールとの間の熱移動を
長期間にわたり正常かつ安定にしかも効率よく行なうこ
とができることから、熱電素子モジュールに搭載される
半導体素子を長期間にわたり正常かつ安定に動作させる
ことができる。Further, a package for accommodating a semiconductor element of the present invention having the thermoelectric element module of the present invention mounted therein,
Also, according to the semiconductor module of the present invention in which the semiconductor element is mounted on the semiconductor element storage package of the present invention and the lid is attached, heat transfer between the semiconductor element and the thermoelectric module can be normally and stably performed for a long period of time. Since it can be efficiently performed, the semiconductor element mounted in the thermoelectric element module can be normally and stably operated for a long period of time.
【００２１】[0021]
【発明の実施の形態】以下、本発明を添付図面に基づき
詳細に説明する。DETAILED DESCRIPTION OF THE INVENTION The present invention will be described below in detail with reference to the accompanying drawings.
【００２２】図１は本発明の熱電素子モジュールの実施
の形態の一例を示す断面図であり、図２は図１における
熱電素子と金属部材との接合部の要部拡大断面図であ
る。これらの図において、１は熱電素子、２は絶縁体基
板、３は接合用のロウ材または接着剤としての半田、４
は金属部材、５はメタライズ金属層である。FIG. 1 is a sectional view showing an example of an embodiment of a thermoelectric element module of the present invention, and FIG. 2 is an enlarged sectional view of an essential part of a joint portion between a thermoelectric element and a metal member in FIG. In these figures, 1 is a thermoelectric element, 2 is an insulating substrate, 3 is solder as a brazing material or adhesive for bonding, and 4 is
Is a metal member, and 5 is a metallized metal layer.
【００２３】熱電素子１は、Ｂｉ−Ｔｅ系材料・Ｆｅ−
Ｓｉ系材料・Ｓｉ−Ｇｅ系材料・Ｃｏ−Ｓｂ系材料等の
焼結体により構成されている。熱電素子１が例えばＢｉ
−Ｔｅ系材料から成る場合であれば、主な特性が、例え
ば、Ｐ型熱電素子のゼーベック係数は200μＶ／Ｋ、Ｎ
型熱電素子のゼーベック係数は−200μＶ／Ｋ、Ｐ型・
Ｎ型熱電素子共に比抵抗率は１ｍΩ・ｃｍ、Ｐ型・Ｎ型
熱電素子共に熱伝導率が1.5Ｗ／ｍＫとなっている。熱
電素子１はそのままでは半田３等のろう材での接合が困
難であるため、その端面には表面処理としてＮｉめっき
等が施される。The thermoelectric element 1 is made of a Bi-Te based material, Fe-
It is composed of a sintered body of Si-based material, Si-Ge-based material, Co-Sb-based material, or the like. The thermoelectric element 1 is, for example, Bi
If it is made of a Te-based material, the main characteristics are, for example, the Seebeck coefficient of the P-type thermoelectric element is 200 μV / K, N
Type thermoelectric element has a Seebeck coefficient of -200 μV / K, P type
The specific resistance is 1 mΩ · cm for both N-type thermoelectric elements, and the thermal conductivity is 1.5 W / mK for both P-type and N-type thermoelectric elements. Since it is difficult to join the thermoelectric element 1 with a brazing material such as the solder 3 as it is, the end surface of the thermoelectric element 1 is plated with Ni or the like as a surface treatment.
【００２４】絶縁体基板２は、熱電素子１および金属部
材４の支持部材として作用し、酸化アルミニウム質焼結
体・窒化アルミニウム質焼結体・炭化珪素質焼結体等の
電気絶縁材料で形成されている。また、絶縁体基板２は
その表面にメタライズ金属層５が被着されており、メタ
ライズ金属層５は金属部材４を絶縁体基板２にろう付け
する際の下地金属として作用する。The insulating substrate 2 acts as a supporting member for the thermoelectric element 1 and the metal member 4, and is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, or a silicon carbide sintered body. Has been done. Moreover, the metallized metal layer 5 is deposited on the surface of the insulating substrate 2, and the metallized metal layer 5 acts as a base metal when brazing the metal member 4 to the insulating substrate 2.
【００２５】絶縁体基板２は、例えば酸化アルミニウム
質焼結体から成る場合であれば、酸化アルミニウム・酸
化珪素・酸化マグネシウム・酸化カルシウム等の原料粉
末に適当な有機溶剤・溶媒を添加混合して泥漿状となす
とともに、これを従来周知のドクターブレード法やカレ
ンダーロール法によりシート状に成形してセラミックグ
リーンシート（セラミック生シート）を得て、しかる
後、このセラミックグリーンシートを複数枚積層し、高
温（約1600℃）で焼成することによって製作される。When the insulating substrate 2 is made of, for example, an aluminum oxide sintered body, an appropriate organic solvent / solvent is added to and mixed with a raw material powder of aluminum oxide / silicon oxide / magnesium oxide / calcium oxide. Along with forming a slurry, it is molded into a sheet by the conventionally known doctor blade method or calendar roll method to obtain a ceramic green sheet (ceramic green sheet), and then, a plurality of these ceramic green sheets are laminated, It is manufactured by firing at high temperature (about 1600 ℃).
【００２６】金属部材４は、絶縁体基板２に接合された
面とは反対の面に熱電素子１の端面に当接する凸部４ａ
が形成されており、この凸部４ａは熱電素子１を支持す
る機能を有している。The metal member 4 has a convex portion 4a which is in contact with the end surface of the thermoelectric element 1 on the surface opposite to the surface bonded to the insulating substrate 2.
Is formed, and the convex portion 4a has a function of supporting the thermoelectric element 1.
【００２７】凸部４ａは、銅やアルミニウム等から成る
金属部材４にエッチング加工法やプレス加工法等の従来
周知の加工法を施すことによって、金属部材４の表面の
所定位置に所定形状および所定の大きさに形成される。
あるいはインゴット（塊）に圧延加工法や打ち抜き加工
法等を施すことによって、金属部材４を形成する際に同
時に形成される。The convex portion 4a is formed on the surface of the metal member 4 at a predetermined shape and at a predetermined position by subjecting the metal member 4 made of copper, aluminum or the like to a conventionally known processing method such as an etching processing method or a press processing method. Formed to the size of.
Alternatively, the ingot (lump) is formed at the same time when the metal member 4 is formed by subjecting the ingot to a rolling process, a punching process, or the like.
【００２８】このようにして金属部材４に設けた凸部４
ａに熱電素子１の端面を当接させるとともにロウ材とし
ての半田３を介して接合させる際、熱電素子１の端面と
凸部４ａの側面と凸部４ａの周囲の金属部材４の表面と
の間に十分な量のロウ材または接着剤の溜まり部となる
適度な容積の空間が形成されるとともにこの空間内およ
び熱電素子１の端面と凸部４ａが設けられた金属部材の
表面との間に半田３が充填介在して溜まり部を形成する
こととなり、その結果、凸部４ａを設けた金属部材４へ
の熱電素子１の半田３を介しての接合が三次元的となっ
て接合強度は極めて強いものとなり、熱電素子１を凸部
４ａが設けられた金属部材４に確実かつ強固に接合させ
ることができる。The convex portion 4 provided on the metal member 4 in this manner
When the end surface of the thermoelectric element 1 is brought into contact with a and is joined through the solder 3 as a brazing material, the end surface of the thermoelectric element 1 and the side surface of the convex portion 4a and the surface of the metal member 4 around the convex portion 4a are joined. A space having an appropriate volume is formed between the end face of the thermoelectric element 1 and the surface of the metal member provided with the convex portion 4a, which is a space for accumulating a sufficient amount of brazing material or adhesive. As a result, the solder 3 is filled in to form a pool, and as a result, the thermoelectric element 1 is three-dimensionally bonded to the metal member 4 provided with the convex portion 4a via the solder 3 and the bonding strength is increased. Is extremely strong, and the thermoelectric element 1 can be reliably and firmly bonded to the metal member 4 provided with the convex portion 4a.
【００２９】金属部材４の凸部４ａは、高さが50μｍ以
上かつ500μｍ以下であることが好ましく、熱電素子１
の端面の面積に対する凸部４ａの上面の面積の比率が40
％以上かつ70％以下であることが好ましい。The height of the convex portion 4a of the metal member 4 is preferably 50 μm or more and 500 μm or less.
The ratio of the area of the upper surface of the convex portion 4a to the area of the end surface of is 40
% Or more and 70% or less is preferable.
【００３０】凸部４ａはその高さが50μｍ未満となる
と、熱電素子１の端面と凸部４ａの側面と凸部４ａの周
囲の金属部材４の表面との間に形成される空間の容積が
小さくなって十分な半田３の溜まり部を形成できずに熱
電素子１を凸部４ａが設けられた金属部材４に強固に接
合させることが困難となる傾向がある。また、500μｍ
を超えると熱電素子１の端面と凸部４ａの側面と凸部４
ａの周囲の金属部材４の表面との間に形成される空間の
容積が大きくなり過ぎ、その空間内に半田３を完全に充
填させることができなくなってやはり十分な半田３の溜
まり部を形成できずに熱電素子１を凸部４ａが設けられ
た金属部材４に強固に接合させることが困難となる傾向
がある。従って、凸部４ａはその高さを50μｍ以上かつ
500μｍ以下の範囲とすることが好ましい。When the height of the convex portion 4a is less than 50 μm, the volume of the space formed between the end surface of the thermoelectric element 1, the side surface of the convex portion 4a and the surface of the metal member 4 around the convex portion 4a becomes small. There is a tendency that the thermoelectric element 1 cannot be firmly joined to the metal member 4 provided with the convex portion 4a because the size becomes small and a sufficient pool of the solder 3 cannot be formed. Also, 500 μm
If it exceeds, the end surface of the thermoelectric element 1, the side surface of the convex portion 4a and the convex portion 4
The volume of the space formed with the surface of the metal member 4 around a becomes too large, and the solder 3 cannot be completely filled in the space, so that a sufficient pooled portion of the solder 3 is formed. If this is not possible, it tends to be difficult to firmly bond the thermoelectric element 1 to the metal member 4 provided with the convex portion 4a. Therefore, the convex portion 4a has a height of 50 μm or more and
It is preferably within a range of 500 μm or less.
【００３１】また、凸部４ａの上面の面積が熱電素子１
の端面の面積の40％未満となると、熱電素子１から金属
部材４への熱移動またはその逆の熱移動を効率よく行な
うことが困難となる傾向がある。また、70％以上となる
と熱電素子１の端面と凸部４ａの側面と凸部４ａの周囲
の金属部材４の表面との間に形成される空間の容積が小
さくなって十分な半田３の溜まり部を形成できずに熱電
素子１を凸部４ａが設けられた金属部材４に強固に接合
させることが困難となる傾向がある。従って、凸部４ａ
の上面の面積は熱電素子１の端面の面積に対して40％以
上かつ70％以下とすることが好ましい。Further, the area of the upper surface of the convex portion 4a is the thermoelectric element 1
If it is less than 40% of the area of the end face, it tends to be difficult to efficiently perform heat transfer from the thermoelectric element 1 to the metal member 4 or vice versa. Further, when it is 70% or more, the volume of the space formed between the end face of the thermoelectric element 1, the side surface of the convex portion 4a, and the surface of the metal member 4 around the convex portion 4a becomes small, so that a sufficient amount of the solder 3 is accumulated. There is a tendency that it becomes difficult to firmly join the thermoelectric element 1 to the metal member 4 provided with the convex portion 4a because the portion cannot be formed. Therefore, the convex portion 4a
The area of the upper surface of is preferably 40% or more and 70% or less of the area of the end surface of the thermoelectric element 1.
【００３２】凸部４ａを有する金属部材４は、その表面
に良導電性で、かつ耐蝕性および半田３との濡れ性が良
好なニッケルをめっき法により被着させておくと、金属
部材４と外部電気回路とを電気的に接続する際にその電
気的接続を良好なものにできるとともに、金属部材４に
熱電素子１を半田３を介して接合させる際にその接合を
強固とすることができる。従って、凸部４ａを有する金
属部材４には、その表面に良導電性で、かつ耐食性およ
びロウ材との濡れ性が良好なニッケルをめっき法により
被着させておくことが望ましい。The metal member 4 having the convex portions 4a is formed on the surface thereof with nickel having good conductivity, corrosion resistance and wettability with the solder 3 by a plating method. When electrically connecting to an external electric circuit, the electrical connection can be made good, and when the thermoelectric element 1 is joined to the metal member 4 via the solder 3, the joining can be strengthened. . Therefore, it is desirable that the surface of the metal member 4 having the convex portion 4a be coated with nickel having good conductivity, corrosion resistance, and wettability with the brazing material by a plating method.
【００３３】図３は、本発明の熱電素子モジュール10を
備えた本発明の半導体素子収納用パッケージおよび本発
明の半導体モジュールの実施の形態の一例を示す断面図
である。FIG. 3 is a sectional view showing an example of an embodiment of the semiconductor element housing package of the present invention including the thermoelectric element module 10 of the present invention and the semiconductor module of the present invention.
【００３４】図３において、11は金属等から成る基体、
12は同じく金属等から成る、基体11の上面に接合された
枠体、13は枠体12の上面に取着された蓋体である。この
基体11と枠体12と蓋体13とで内部に熱電素子モジュール
10を収納するための容器が構成される。In FIG. 3, 11 is a substrate made of metal or the like,
Reference numeral 12 is a frame body also made of metal or the like, which is joined to the upper surface of the base body 11, and 13 is a lid body attached to the upper surface of the frame body 12. The base body 11, the frame body 12, and the lid body 13 are provided inside the thermoelectric element module.
A container for storing 10 is configured.
【００３５】基体11は熱電素子モジュール10を支持する
ための支持部材となるものであり、その上面の中央部に
熱電素子モジュール10を載置するための載置部11ａを有
しており、この載置部11ａには熱電素子モジュール10が
半田等の接着剤により接着固定される。The base 11 serves as a support member for supporting the thermoelectric element module 10, and has a mounting portion 11a for mounting the thermoelectric element module 10 in the center of the upper surface thereof. The thermoelectric element module 10 is bonded and fixed to the mounting portion 11a with an adhesive such as solder.
【００３６】基体11は鉄−ニッケル−コバルト合金や銅
−タングステン合金等の金属材料から成り、例えば鉄−
ニッケル−コバルト合金から成る場合であれば、鉄−ニ
ッケル−コバルト合金のインゴット（塊）に圧延加工法
や打ち抜き加工法等の従来周知の金属加工法を施すこと
によって製作される。The base 11 is made of a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy.
When it is made of a nickel-cobalt alloy, it is produced by subjecting an ingot (lump) of an iron-nickel-cobalt alloy to a conventionally known metal working method such as a rolling working method or a punching working method.
【００３７】なお、基体11はその外表面に耐蝕性に優
れ、かつロウ材に対して濡れ性が良い金属、具体的には
厚さ２〜６μｍのニッケル層および厚さ0.5〜５μｍの
金層を順次、メッキ法等により被着させておくと、基体
11が酸化腐蝕するのを有効に防止することができるとと
もに、基体11の上面に熱電素子モジュール10を強固に接
着固定させることができる。従って、基体11には、酸化
腐蝕を有効に防止し、かつ上面に熱電素子モジュール10
を強固に接着固定させるために、その表面に厚さ２〜６
μｍのニッケル層および厚さ0.5〜５μｍの金層を順
次、メッキ法等により被着させておくことが好ましい。The base 11 is made of a metal having excellent corrosion resistance on the outer surface thereof and having good wettability to the brazing material, specifically, a nickel layer having a thickness of 2 to 6 μm and a gold layer having a thickness of 0.5 to 5 μm. Are sequentially deposited by a plating method, etc.
It is possible to effectively prevent oxidative corrosion of 11 and firmly bond and fix the thermoelectric element module 10 to the upper surface of the base 11. Therefore, the base body 11 effectively prevents oxidative corrosion, and the thermoelectric element module 10 is provided on the upper surface.
2 to 6 in order to firmly bond and fix the
It is preferable that a nickel layer having a thickness of 0.5 μm and a gold layer having a thickness of 0.5 to 5 μm are successively deposited by a plating method or the like.
【００３８】また、基体11の上面には、熱電素子モジュ
ール10が載置される載置部11ａを囲繞するようにして枠
体12が接合されており、この枠体12の内側に熱電素子モ
ジュール10を収容するための空所が形成されている。Further, a frame 12 is joined to the upper surface of the base 11 so as to surround the mounting portion 11a on which the thermoelectric element module 10 is mounted, and the thermoelectric element module is provided inside the frame 12. An empty space is formed to accommodate 10.
【００３９】枠体12は鉄−ニッケル−コバルト合金や鉄
−ニッケル合金等の金属材料から成り、例えば、鉄−ニ
ッケル−コバルト合金等のインゴット（塊）をプレス加
工により枠状とすることによって形成され、基体11への
取着は基体11の上面と枠体12の下面とを銀ロウ材を介し
ロウ付けすることによって行なわれている。The frame body 12 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, and is formed by pressing an ingot (lump) of an iron-nickel-cobalt alloy or the like into a frame shape by pressing. The attachment to the base 11 is performed by brazing the upper surface of the base 11 and the lower surface of the frame 12 with a silver brazing material.
【００４０】さらに、枠体12はその側壁に貫通孔22およ
び切欠部24を有しており、枠体12の貫通孔22もしくは貫
通孔22周辺には、鉄−ニッケル−コバルト合金や鉄−ニ
ッケル合金等の金属材料から成る筒状の挿通管23が取着
されている。また、挿通管23のパッケージ内側の端部に
は、サファイアやガラス等の透光性材料から成る透明窓
20が固定されていて、その外側に配置されるレンズ等の
光部品を内蔵した光学部品（図示せず）によってＬＤ
（図示せず）の出射信号光を光ファイバ（図示せず）に
光結合させている。Further, the frame body 12 has a through hole 22 and a cutout portion 24 in its side wall, and the iron-nickel-cobalt alloy or iron-nickel alloy is formed around the through hole 22 or the through hole 22 of the frame body 12. A cylindrical insertion tube 23 made of a metal material such as an alloy is attached. In addition, a transparent window made of a translucent material such as sapphire or glass is provided at the end of the insertion tube 23 inside the package.
20 is fixed, and the LD is provided by an optical component (not shown) having an optical component such as a lens disposed outside thereof.
The outgoing signal light (not shown) is optically coupled to an optical fiber (not shown).
【００４１】枠体12の側壁に形成されている貫通孔22
は、枠体12に例えばドリル孔開け加工を施すことによっ
て所定形状に形成される。Through hole 22 formed in the side wall of the frame body 12
Is formed into a predetermined shape by subjecting the frame body 12 to, for example, drilling.
【００４２】また、枠体12の側壁の切欠部24には、端子
体25が挿着されている。A terminal body 25 is inserted into the cutout portion 24 on the side wall of the frame body 12.
【００４３】この端子体25は、酸化アルミニウム質焼結
体等の電気絶縁材料から成る絶縁体26と複数個の配線層
27とから成り、配線層27を金属枠体12に対し電気的絶縁
をもって金属枠体12の内側から外側にかけて配設するた
めのものである。この端子体25は、絶縁体26の側面に予
め金属層を被着させておくとともに、この金属層を枠体
12の切欠部24の内壁面に銀ロウ等のロウ材を介し取着す
ることによって、枠体12の切欠部24に挿着される。The terminal body 25 includes an insulator 26 made of an electrically insulating material such as an aluminum oxide sintered body and a plurality of wiring layers.
And the wiring layer 27 is arranged from the inside to the outside of the metal frame body 12 with electrical insulation to the metal frame body 12. In this terminal body 25, a metal layer is previously attached to the side surface of the insulator 26, and the metal layer is used as a frame body.
By attaching the brazing material such as silver wax to the inner wall surface of the 12 notches 24, the notches 24 are inserted into the notches 24 of the frame 12.
【００４４】端子体25の絶縁体26は、例えば、酸化アル
ミニウム・酸化珪素・酸化マグネシウム・酸化カルシウ
ム等の原料粉末に適当な有機溶剤・溶媒を添加混合して
泥漿状となすとともに、これを従来周知のドクターブレ
ード法やカレンダーロール法によりシート状に成形して
セラミックグリーンシート（セラミック生シート）を得
て、しかる後、このセラミックグリーンシートに適当な
打ち抜き加工を施すとともに上下に複数枚積層し、高温
（約1600℃）で焼成することによって製作される。The insulator 26 of the terminal body 25 is, for example, made into a sludge by adding and mixing an appropriate organic solvent / solvent to raw material powder such as aluminum oxide / silicon oxide / magnesium oxide / calcium oxide. A ceramic green sheet (ceramic green sheet) is obtained by forming it into a sheet shape by the well-known doctor blade method or calendar roll method, and thereafter, appropriate punching processing is applied to this ceramic green sheet and a plurality of layers are laminated on top and bottom, It is manufactured by firing at high temperature (about 1600 ℃).
【００４５】また、端子体25の絶縁体26には枠体12の内
側に位置する領域に段差部26ａが形成されており、この
段差部26ａの上面から枠体12の外側にかけて複数個の配
線層27が形成されている。Further, the insulator 26 of the terminal body 25 is provided with a step portion 26a in a region located inside the frame body 12, and a plurality of wirings are provided from the upper surface of the step portion 26a to the outside of the frame body 12. Layer 27 has been formed.
【００４６】配線層27は熱電素子モジュール10の各電極
を外部電気回路に接続する際の導電路となるものであ
り、配線層27のうち絶縁体26の段差部26ａに形成されて
いる領域には熱電素子モジュール10の各電極がそれぞれ
リード線28を介して電気的に接続され、また枠体12の外
側に位置する領域には外部電気回路と接続される外部リ
ード端子（図示せず）がロウ材を介し取着されている。The wiring layer 27 serves as a conductive path when each electrode of the thermoelectric element module 10 is connected to an external electric circuit, and is formed in a region of the wiring layer 27 formed in the step portion 26a of the insulator 26. The electrodes of the thermoelectric element module 10 are electrically connected to each other via the lead wires 28, and external lead terminals (not shown) connected to an external electric circuit are provided in a region located outside the frame body 12. It is attached via brazing material.
【００４７】配線層27はタングステンやモリブデン・マ
ンガン等で形成されており、例えば、タングステン等の
粉末に有機溶剤・溶媒を添加混合して得た金属ペースト
を絶縁体26となるセラミックグリーンシートに予め従来
周知のスクリーン印刷法により所定パターンに印刷塗布
しておくことによって絶縁体26に形成される。The wiring layer 27 is formed of tungsten, molybdenum, manganese, or the like. For example, a metal paste obtained by adding an organic solvent or solvent to a powder of tungsten or the like and mixing the same with a ceramic green sheet to be the insulator 26 in advance. The insulator 26 is formed by printing and applying a predetermined pattern by a conventionally known screen printing method.
【００４８】配線層27は、その露出する表面にニッケル
・金等の耐蝕性に優れ、かつロウ材との濡れ性に優れる
金属を１〜20μｍの厚みにメッキ法により被着させてお
くと、配線層27の酸化腐蝕を有効に防止することができ
るとともに配線層27へのリード線28の接続を強固となす
ことができる。従って、配線層27の露出する表面には、
ニッケル・金等の耐蝕性に優れ、かつロウ材との濡れ性
に優れる金属を１〜20μｍの厚みに被着させておくこと
が好ましい。The wiring layer 27 is formed by depositing a metal such as nickel and gold, which has excellent corrosion resistance and wettability with the brazing material, to a thickness of 1 to 20 μm on the exposed surface by a plating method. Oxidation and corrosion of the wiring layer 27 can be effectively prevented, and the lead wire 28 can be firmly connected to the wiring layer 27. Therefore, on the exposed surface of the wiring layer 27,
It is preferable to deposit a metal such as nickel and gold, which has excellent corrosion resistance and wettability with the brazing material, to a thickness of 1 to 20 μm.
【００４９】また一方、配線層27には外部リード端子が
銀ロウ等のロウ材を介してロウ付け取着されており、外
部リード端子は容器内部に収容する熱電素子モジュール
10の各電極を外部電気回路に電気的に接続する導電路と
なり、外部リード端子を外部電気回路に接続することに
よって容器内部に収容される熱電素子モジュール10はリ
ード線28・配線層27および外部リード端子を介して外部
電気回路に電気的に接続されることとなる。On the other hand, external lead terminals are brazed and attached to the wiring layer 27 through a brazing material such as silver solder, and the external lead terminals are housed inside the container.
The thermoelectric element module 10 becomes a conductive path for electrically connecting each electrode of 10 to an external electric circuit and is housed inside the container by connecting the external lead terminal to the external electric circuit. It will be electrically connected to an external electric circuit through the lead terminal.
【００５０】さらに、枠体12はその上面に、例えば鉄−
ニッケル−コバルト合金や鉄−ニッケル合金等の金属材
料から成る蓋体13が取着され、これによって基体11と枠
体12と蓋体13とから成る容器の内部に熱電素子モジュー
ル10およびこれに搭載されたＬＤ等の光半導体素子や半
導体素子が気密に封止されることとなる。これにより本
発明の半導体モジュールが構成され、図５に示す半導体
モジュールと同様に、光ファイバが接続されて光通信の
発振装置等に使用される。Further, the frame 12 is provided on its upper surface with, for example, iron-
A lid 13 made of a metal material such as a nickel-cobalt alloy or an iron-nickel alloy is attached, whereby the thermoelectric element module 10 and the thermoelectric element module 10 are mounted inside the container made of the base 11, the frame 12 and the lid 13. The optical semiconductor element such as the LD and the semiconductor element thus sealed are hermetically sealed. With this, the semiconductor module of the present invention is configured, and similarly to the semiconductor module shown in FIG. 5, an optical fiber is connected and used for an oscillation device of optical communication or the like.
【００５１】蓋体13の枠体12の上面への取着は、例えば
シームウェルド法等の溶接によって行なわれる。The lid 13 is attached to the upper surface of the frame 12 by welding such as the seam weld method.
【００５２】なお、本発明は以上の実施の形態の例に限
定されるものではなく、本発明の要旨を逸脱しない範囲
であれば、種々の変更を行なっても差し支えない。例え
ば、上述の実施の形態の例では金属部材４に形成される
凸部４ａは金属部材４と一体に形成したが、凸部４ａを
金属部材と同様の材料・方法で別体に形成しておき、ロ
ウ材等を介して金属部材４に凸部４ａを接着固定するこ
とによって形成してもよい。The present invention is not limited to the above-mentioned embodiments, and various modifications may be made without departing from the scope of the present invention. For example, in the example of the above-described embodiment, the convex portion 4a formed on the metal member 4 is formed integrally with the metal member 4, but the convex portion 4a is formed separately by the same material and method as the metal member. Alternatively, it may be formed by adhesively fixing the convex portion 4a to the metal member 4 via a brazing material or the like.
【００５３】[0053]
【発明の効果】以上説明したように本発明の熱電素子モ
ジュールによれば、一対の絶縁体基板の間に、複数個の
熱電素子の両端がそれぞれ金属部材を介在させて接合さ
れて成り、絶縁体基板の一方に半導体素子が搭載される
熱電素子モジュールであって、金属部材は、熱電素子の
端面にこの端面より小さな面積の凸部で当接するととも
に、この凸部の周囲とこれに対向する熱電素子の端面と
の間にロウ材または接着剤の溜まり部を形成しているこ
とから、凸部を設けた金属部材への熱電素子のロウ材ま
たは接着剤を介しての接合が三次元的となって熱電素子
を金属部材へ極めて強固に接続させることができるた
め、金属部材と熱電素子との接合部における熱歪みによ
る電極間の剥離障害等を問題の無い状態とすることがで
き、熱電素子モジュールを長期間にわたり正常かつ安定
に動作させることができる。As described above, according to the thermoelectric element module of the present invention, both ends of a plurality of thermoelectric elements are bonded to each other with a metal member interposed between a pair of insulating substrates, and insulation is achieved. In a thermoelectric element module in which a semiconductor element is mounted on one side of a body substrate, a metal member abuts on an end surface of the thermoelectric element with a convex portion having an area smaller than this end surface, and faces the periphery of the convex portion. Since the brazing material or adhesive reservoir is formed between the end surface of the thermoelectric element and the metal member having the convex portion, the thermoelectric element is joined three-dimensionally through the brazing material or adhesive. As a result, the thermoelectric element can be connected to the metal member extremely firmly, so that the peeling failure between the electrodes due to the thermal strain at the joint between the metal member and the thermoelectric element can be made into a problem-free state. Element module It can be operated normally and stably Le long time.
【００５４】また、本発明の熱電素子モジュールによれ
ば、凸部の高さを50μｍ以上かつ500μｍ以下とするこ
とにより、熱電素子の端面と金属部材の凸部の側面と凸
部の周囲の金属部材の表面との間に形成される空間に必
要かつ十分な量のロウ材または接着剤を充填して適度な
溜まり部を形成し、熱電素子を凸部が設けられた金属部
材の表面に強固に接合させることが可能となる。Further, according to the thermoelectric element module of the present invention, by setting the height of the convex portion to be 50 μm or more and 500 μm or less, the end face of the thermoelectric element, the side surface of the convex portion of the metal member, and the metal around the convex portion are formed. Fill the space formed with the surface of the member with a necessary and sufficient amount of brazing material or adhesive to form an appropriate pool, and secure the thermoelectric element on the surface of the metal member with the convex portion. It is possible to bond to.
【００５５】また、熱電素子の端面の面積に対する凸部
の上面の面積の比率を40％以上かつ70％以下とすること
により、熱電素子から金属部材への熱移動またはその逆
の熱移動を効率よく行なわせることができ、効率のよい
温度制御を行なうことができるものとなる。Further, by setting the ratio of the area of the upper surface of the convex portion to the area of the end surface of the thermoelectric element to 40% or more and 70% or less, the heat transfer from the thermoelectric element to the metal member or vice versa can be efficiently performed. The temperature can be well controlled and the temperature can be controlled efficiently.
【００５６】また、本発明の熱電素子モジュールをその
内部に載置した本発明の半導体収納用パッケージ、およ
び本発明の半導体モジュールによれば、熱電素子モジュ
ールの信頼性が向上し正常に動作させることができるこ
とにより、半導体素子と熱電モジュールとの間の熱移動
を長期間にわたり正常かつ安定にしかも効率よく行なう
ことができることから、熱電素子モジュールの一方の面
に実装される半導体素子を長期間にわたり正常かつ安定
に動作させることができる。Further, according to the semiconductor storage package of the present invention in which the thermoelectric element module of the present invention is mounted, and the semiconductor module of the present invention, the reliability of the thermoelectric element module is improved and the thermoelectric element module operates normally. This enables heat transfer between the semiconductor element and the thermoelectric module to be performed normally, stably and efficiently over a long period of time, so that the semiconductor element mounted on one surface of the thermoelectric element module can be operated normally for a long period of time. And it can operate stably.
【図１】本発明の熱電素子モジュールの実施の形態の一
例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of an embodiment of a thermoelectric element module of the present invention.
【図２】図１における熱電素子と金属部材との接合部の
要部拡大断面図である。FIG. 2 is an enlarged cross-sectional view of an essential part of a joint between a thermoelectric element and a metal member in FIG.
【図３】本発明の熱電素子モジュールを備えた本発明の
半導体素子収納用パッケージおよび本発明の半導体モジ
ュールの実施の形態の一例を示す断面図である。FIG. 3 is a cross-sectional view showing an example of an embodiment of a semiconductor element housing package of the present invention including a thermoelectric element module of the present invention and a semiconductor module of the present invention.
【図４】従来の熱電素子モジュールの実施の形態の一例
を示す断面図である。FIG. 4 is a sectional view showing an example of an embodiment of a conventional thermoelectric element module.
【図５】熱電素子モジュールを具えた半導体モジュール
の実施の形態の一例を示す断面図である。FIG. 5 is a sectional view showing an example of an embodiment of a semiconductor module including a thermoelectric element module.
１・・・・・熱電素子 ２・・・・・絶縁体基板 ３・・・・・半田（ロウ材または接着剤） ４・・・・・金属部材 ４ａ・・・・凸部 11・・・・・基体 12・・・・・枠体 13・・・・・蓋体 10・・・・・熱電素子モジュール 16・・・・・半導体素子（半導体レーザ素子：ＬＤ） 1 ... Thermoelectric element 2 ... Insulator substrate 3 ... Solder (wax material or adhesive) 4 ... Metal member 4a ... ・ Convex part 11 ... Base 12: Frame body 13 ... Lid 10 ... Thermoelectric module 16 ... Semiconductor element (semiconductor laser element: LD)
Claims (4)
素子の両端がそれぞれ金属部材を介在させて接合されて
成り、前記絶縁体基板の一方に半導体素子が搭載される
熱電素子モジュールであって、前記金属部材は、前記熱
電素子にロウ材または接着剤を介して接合され、前記熱
電素子の端面に該端面より小さな面積の凸部で当接する
とともに、該凸部の周囲とこれに対向する前記端面との
間に前記ロウ材または接着剤の溜まり部を形成している
ことを特徴とする熱電素子モジュール。1. A thermoelectric element module comprising a pair of insulating substrates, wherein both ends of a plurality of thermoelectric elements are joined together with a metal member interposed therebetween, and a semiconductor element is mounted on one of the insulating substrates. The metal member is bonded to the thermoelectric element via a brazing material or an adhesive, and abuts on the end face of the thermoelectric element with a convex portion having an area smaller than the end face, and around the convex portion and this. The thermoelectric element module is characterized in that the brazing material or the adhesive accumulating portion is formed between the end surface and the end surface facing each other.
０μｍ以下であり、前記熱電素子の前記端面の面積に対
する前記凸部の上面の面積の比率が４０％以上かつ７０
％以下であることを特徴とする請求項１記載の熱電素子
モジュール。2. The height of the convex portion is 50 μm or more and 50 or more.
0 μm or less, and the ratio of the area of the upper surface of the convex portion to the area of the end surface of the thermoelectric element is 40% or more and 70% or more.
% Or less, The thermoelectric element module according to claim 1.
前記絶縁体基板を当接させて載置された請求項１または
請求項２記載の熱電素子モジュールと、前記基体の上面
に前記載置部を囲繞するようにして接合された枠体と、
該枠体の上面に前記載置部を覆うように取着される蓋体
とを具備することを特徴とする半導体素子収納用パッケ
ージ。3. The thermoelectric element module according to claim 1 or 2, wherein the base body and the mounting portion on the upper surface of the base body are mounted with the other insulating substrate in contact with the base body, and the top surface of the base body. A frame body joined to surround the above-mentioned placing part,
A package for housing a semiconductor device, comprising: a lid attached to the upper surface of the frame so as to cover the mounting portion.
ージと、前記熱電素子モジュールの一方の前記絶縁体基
板に搭載された半導体素子と、前記枠体の上面に取着さ
れた前記蓋体とを具備することを特徴とする半導体モジ
ュール。4. The package for housing a semiconductor element according to claim 3, a semiconductor element mounted on the one insulating substrate of the thermoelectric element module, and the lid body attached to the upper surface of the frame body. A semiconductor module comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001352827A JP3909236B2 (en) | 2001-11-19 | 2001-11-19 | Thermoelectric element module, semiconductor element storage package and semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001352827A JP3909236B2 (en) | 2001-11-19 | 2001-11-19 | Thermoelectric element module, semiconductor element storage package and semiconductor module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003152231A true JP2003152231A (en) | 2003-05-23 |
| JP3909236B2 JP3909236B2 (en) | 2007-04-25 |
Family
ID=19164951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001352827A Expired - Fee Related JP3909236B2 (en) | 2001-11-19 | 2001-11-19 | Thermoelectric element module, semiconductor element storage package and semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3909236B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007329349A (en) * | 2006-06-08 | 2007-12-20 | Denso Corp | Thermoelectric conversion device and manufacturing method thereof |
| JP2010109054A (en) * | 2008-10-29 | 2010-05-13 | Kyocera Corp | Thermoelectric conversion module and cooler, generator and temperature controller |
-
2001
- 2001-11-19 JP JP2001352827A patent/JP3909236B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007329349A (en) * | 2006-06-08 | 2007-12-20 | Denso Corp | Thermoelectric conversion device and manufacturing method thereof |
| JP2010109054A (en) * | 2008-10-29 | 2010-05-13 | Kyocera Corp | Thermoelectric conversion module and cooler, generator and temperature controller |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3909236B2 (en) | 2007-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3500304B2 (en) | Semiconductor element support member and semiconductor element storage package using the same | |
| JPH0951048A (en) | Package for housing optical semiconductor element | |
| JP3670527B2 (en) | Optical semiconductor element storage package | |
| JP3619393B2 (en) | Optical semiconductor element storage package | |
| JP4116809B2 (en) | Thermoelectric element module, semiconductor element storage package and semiconductor module | |
| JP2001168443A (en) | Package for housing optical semiconductor element | |
| JP4116814B2 (en) | Thermoelectric element module, semiconductor element storage package and semiconductor module | |
| JP3909236B2 (en) | Thermoelectric element module, semiconductor element storage package and semiconductor module | |
| JP3909253B2 (en) | Thermoelectric element module, semiconductor element storage package and semiconductor module | |
| JP2003158303A (en) | Thermoelectric element module, package for accommodating semiconductor device, and semiconductor module | |
| JPWO2003010867A1 (en) | Optical semiconductor module and manufacturing method thereof | |
| JP3709084B2 (en) | Optical semiconductor element storage package | |
| JP3457906B2 (en) | Optical semiconductor element storage package | |
| JP2003197987A (en) | Package for housing thermoelectric electric module and semiconductor element and semiconductor module | |
| JP3176334B2 (en) | Package for storing optical semiconductor element and method for manufacturing the same | |
| JP2746809B2 (en) | Package for storing optical semiconductor elements | |
| JP2002232058A (en) | Package for storing optical semiconductor element | |
| JP3297617B2 (en) | Package for storing optical semiconductor elements | |
| JP3457898B2 (en) | Optical semiconductor element storage package | |
| JP3359528B2 (en) | Package for storing optical semiconductor elements | |
| JP2003282971A (en) | Thermoelectric element module, package for containing semiconductor element and semiconductor module | |
| JP3709082B2 (en) | Optical semiconductor element storage package | |
| JP2002314186A (en) | Package for storing optical semiconductor element and optical semiconductor device | |
| JP2001102636A (en) | Package for housing optical semiconductor element | |
| JP2003037196A (en) | Package for housing optical semiconductor element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040517 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20051130 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070116 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070122 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110126 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110126 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120126 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120126 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130126 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |