JP2003197403A - Low-resistance resistor - Google Patents
Low-resistance resistorInfo
- Publication number
- JP2003197403A JP2003197403A JP2001395317A JP2001395317A JP2003197403A JP 2003197403 A JP2003197403 A JP 2003197403A JP 2001395317 A JP2001395317 A JP 2001395317A JP 2001395317 A JP2001395317 A JP 2001395317A JP 2003197403 A JP2003197403 A JP 2003197403A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- current
- low
- terminals
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子機器等に搭載
され、例えば電源電流等の高電流の検出に好適な低抵抗
器に係り、特に四端子タイプの低抵抗器の電極構造に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low resistor which is mounted on an electronic device or the like and is suitable for detecting a high current such as a power supply current, and more particularly to an electrode structure of a four-terminal type low resistor.
【０００２】[0002]
【従来の技術】電流検出用の低抵抗器は、ミリオーム領
域の極めて小さな抵抗値を有する抵抗体に、電流を供給
する電流端子（電極）と、その抵抗体内部の電流経路に
沿って生じる電圧を検出する電圧検出端子（電極）とを
備えた四端子タイプのものが知られている。抵抗体の抵
抗値が既知であると、電圧検出端子に生じる電圧を計測
することで、オームの法則から電流端子間に流れる電流
値を計測することができる。2. Description of the Related Art A low current detecting resistor is a current terminal (electrode) for supplying a current to a resistor having an extremely small resistance value in the milliohm region, and a voltage generated along a current path inside the resistor. There is known a four-terminal type having a voltage detection terminal (electrode) for detecting. If the resistance value of the resistor is known, the current value flowing between the current terminals can be measured from Ohm's law by measuring the voltage generated at the voltage detection terminal.
【０００３】図６は、従来の低抵抗器の構成例を示す。
回路基板１０に低抵抗器１が固定され、低抵抗器１は抵
抗体２の下面に一対の電流端子３，４が設けられ、上面
に一対の電圧検出端子５，６が設けられている。ここで
電圧検出端子５，６はボンディングパッドであり、図示
しないワイヤボンド等により回路基板１０のパッドに接
続され、この間で抵抗体２の電流により生じる電圧値を
検出する。FIG. 6 shows a configuration example of a conventional low resistor.
The low resistor 1 is fixed to the circuit board 10, and the low resistor 1 is provided with a pair of current terminals 3 and 4 on the lower surface of the resistor 2 and a pair of voltage detection terminals 5 and 6 on the upper surface. Here, the voltage detection terminals 5 and 6 are bonding pads, which are connected to the pads of the circuit board 10 by wire bonding or the like (not shown), and the voltage value generated by the current of the resistor 2 is detected during this period.
【０００４】[0004]
【発明が解決しようとする課題】このような電流検出用
抵抗器においては、正確な電流値の検出を行うために
は、抵抗値の高精度化と共に、電流経路に沿った抵抗体
により生じる電圧を正確に検出できるようにする必要が
ある。又、抵抗温度係数（ＴＣＲ）は、なるべく小さく
することが、周囲温度の変動の影響を受けず、正確な電
流値の検出のために好ましい。In such a current detecting resistor, in order to accurately detect the current value, the resistance value is made more accurate and the voltage generated by the resistor along the current path is increased. Need to be detected accurately. Further, it is preferable that the temperature coefficient of resistance (TCR) be as small as possible in order to detect an accurate current value without being affected by fluctuations in ambient temperature.
【０００５】本発明は上述した事情に鑑みて為されたも
ので、高精度の電流値の検出を行うことができ、且つ抵
抗温度係数を低減できる低抵抗器を提供することを目的
とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a low resistor capable of detecting a current value with high accuracy and reducing the temperature coefficient of resistance.
【０００６】[0006]
【課題を解決するための手段】本発明の低抵抗器は、低
抵抗用合金からなる板状の抵抗体と、該抵抗体の一面の
両端部近傍に配置された一対の電流端子と、前記抵抗体
の他面の両端部近傍に配置された一対の電圧検出端子と
からなり、該電圧検出端子は前記電流検出端子よりも外
側に配置されていることを特徴とする。A low resistor according to the present invention comprises a plate-shaped resistor made of a low-resistance alloy, a pair of current terminals arranged near both ends of one surface of the resistor, and It is characterized in that it comprises a pair of voltage detection terminals arranged in the vicinity of both ends of the other surface of the resistor, and the voltage detection terminal is arranged outside the current detection terminal.
【０００７】上述した本発明によれば、一対の電流端子
間の抵抗体内部の電流経路を十分にカバーするように電
圧検出端子を配置することができる。即ち、電流により
形成される電位分布における、電圧の変化が殆ど生じな
い領域に電圧検出端子を配置することで、電位分布の遷
移領域の影響を受けないようにすることができる。従っ
て、電流経路の変動等による電圧降下のロス分をほとん
どゼロとすることができ、これにより精度の高い電流値
検出が行える。According to the present invention described above, the voltage detection terminal can be arranged so as to sufficiently cover the current path inside the resistor between the pair of current terminals. That is, by arranging the voltage detection terminal in a region where the voltage hardly changes in the potential distribution formed by the current, it is possible to avoid the influence of the transition region of the potential distribution. Therefore, the loss of the voltage drop due to the fluctuation of the current path can be made almost zero, and the current value can be detected with high accuracy.
【０００８】又、上記低抵抗器においては、前記電圧検
出端子のサイズを前記電流端子のサイズよりも小さくす
ることが好ましい。これにより、ボンディングパッドと
なる電圧検出端子の面積を小さくすることで、一般に高
抵抗温度係数の材料による抵抗器全体への抵抗温度係数
の寄与分が減少する。従って、これにより低抵抗器の抵
抗温度係数を低減することが可能である。In the low resistance device, it is preferable that the size of the voltage detection terminal is smaller than the size of the current terminal. As a result, by reducing the area of the voltage detection terminal which becomes the bonding pad, the contribution of the resistance temperature coefficient to the entire resistor, which is generally made of a material having a high resistance temperature coefficient, is reduced. Therefore, it is possible to reduce the temperature coefficient of resistance of the low resistor.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施形態について
添付図面を参照しながら説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings.
【００１０】図１は、本発明の第１の実施形態の低抵抗
器を示し、ミリオーム領域の低抵抗値を有する四端子型
の電流検出用低抵抗器である。この低抵抗器１１は、低
抵抗用合金からなる板体状の抵抗体１１に、その下面側
に一対の電流端子（電極）１３，１４と、上面に一対の
電圧検出端子（検出用端子）１５，１６とを備えてい
る。抵抗体１２の寸法は、例えば縦５〜１５ｍｍ×横２
〜１０ｍｍ×高さ０．２〜１．０ｍｍ程度であり、例え
ば銅・ニッケル合金等から構成されている。低抵抗材料
としては、銅・ニッケル合金、ニッケル・クロム合金、
鉄・クロム合金、銀合金、金・白金・銀合金等の貴金属
合金を用いることができる。FIG. 1 shows a low resistance device according to a first embodiment of the present invention, which is a four-terminal type current detection low resistance device having a low resistance value in the milliohm region. The low resistor 11 includes a plate-shaped resistor 11 made of a low resistance alloy, a pair of current terminals (electrodes) 13 and 14 on the lower surface side, and a pair of voltage detection terminals (detection terminals) on the upper surface. 15 and 16 are provided. The size of the resistor 12 is, for example, 5 to 15 mm in length × 2 in width.
The height is about 10 mm × 0.2 to 1.0 mm, and is made of, for example, copper / nickel alloy. Low resistance materials include copper / nickel alloys, nickel / chromium alloys,
Noble metal alloys such as iron / chromium alloys, silver alloys, gold / platinum / silver alloys can be used.
【００１１】電流端子１３，１４は、その下面にはんだ
めっき、ニッケルめっき、金めっき等のめっき層１７，
１８を備え、回路基板２０上の図示しない電流供給用パ
ッドに面実装等により接続固定される。ここで、電流端
子１５，１６は、銅又は銅合金等の高導電性材料片が圧
着又は融着により抵抗体１２の両端部に固定されてい
る。。抵抗体１１の上面に設けられた電圧検出端子１
５，１６は、ボンディングパッドを形成し、例えばニッ
ケル、ニッケルを含む合金、金又は金合金等の導電性材
料片が圧着又は融着により抵抗体１２の両端部に固定さ
れている。The current terminals 13 and 14 are provided on their lower surfaces with a plating layer 17 such as solder plating, nickel plating or gold plating.
18 is provided and is connected and fixed to a current supply pad (not shown) on the circuit board 20 by surface mounting or the like. Here, in the current terminals 15 and 16, highly conductive material pieces such as copper or copper alloy are fixed to both ends of the resistor 12 by pressure bonding or fusion bonding. . Voltage detection terminal 1 provided on the upper surface of the resistor 11
Reference numerals 5 and 16 form bonding pads, and conductive material pieces such as nickel, an alloy containing nickel, gold or a gold alloy are fixed to both ends of the resistor 12 by pressure bonding or fusion.
【００１２】電流検出端子１５，１６の抵抗体１２の長
手方向に沿った長さＢは、電流端子１３，１４の長さＡ
に対して小さく設定されている。従って、電圧検出端子
１５，１６の内側端縁３０ａ，３０ｂは、電流端子１
７，１８の内側端縁３１ａ，３１ｂよりも外側に位置し
ている。即ち、電圧検出端子１５，１６は、電流端子１
７，１８に対して、全体として外側に位置している。The length B of the current detection terminals 15 and 16 along the longitudinal direction of the resistor 12 is the length A of the current terminals 13 and 14.
Is set smaller than. Therefore, the inner edges 30a and 30b of the voltage detection terminals 15 and 16 are connected to the current terminal 1
It is located outside the inner edges 31a, 31b of 7,18. That is, the voltage detection terminals 15 and 16 are the current terminals 1
It is located outside as a whole with respect to Nos. 7 and 18.
【００１３】次に、この低抵抗器の動作について図２を
参照して説明する。電流端子１７，１８間に検出対象の
電流が供給されると、その電流は抵抗体１２の内部を流
れる。この電流により、抵抗体１２内には図示するよう
な電位分布Ｖが生じる。この電位分布から分かるよう
に、電流端子１５，１６が配置された部分の外側の領域
において電位Ｖは略一定となる。従って、電圧検出端子
１５，１６を電流検出端子１３，１４の外側に配置する
ことで、この電圧検出端子１５，１６を電位Ｖが略一定
となる領域に配置することができる。Next, the operation of this low resistor will be described with reference to FIG. When a current to be detected is supplied between the current terminals 17 and 18, the current flows inside the resistor 12. This current causes a potential distribution V as shown in the figure in the resistor 12. As can be seen from this potential distribution, the potential V becomes substantially constant in the region outside the portion where the current terminals 15 and 16 are arranged. Therefore, by arranging the voltage detection terminals 15 and 16 outside the current detection terminals 13 and 14, the voltage detection terminals 15 and 16 can be arranged in a region where the potential V is substantially constant.
【００１４】これに対して、従来から一般に用いられて
いるような電流端子と電圧検出端子との長手方向長さ
Ａ，Ｂを等しく（Ｂ’に）設定すると、図示するように
電圧検出端子の内側端縁が電位分布Ｖの遷移領域にかか
ることになる。従って、電圧検出端子１５，１６の長さ
Ｂを電流検出端子の長さＡに対して略半分程度とするこ
とで、電圧ドロップ分の１％程度を略ゼロとすることが
できる。On the other hand, when the lengths A and B in the longitudinal direction of the current terminal and the voltage detection terminal, which are generally used conventionally, are set equal (to B '), the voltage detection terminal of the voltage detection terminal is set as shown in the figure. The inner edge will fall on the transition region of the potential distribution V. Therefore, by setting the length B of the voltage detection terminals 15 and 16 to be approximately half the length A of the current detection terminal, approximately 1% of the voltage drop can be made substantially zero.
【００１５】更に、電圧検出端子１５，１６の長さＢを
一般的に用いられている長さＢ’（＝Ａ）よりも短くす
ることで、低抵抗器の抵抗温度係数（ＴＣＲ）の改善が
可能である。即ち、電圧検出端子１５，１６を構成する
材料は、上述したようにニッケル又はニッケル合金等の
比較的抵抗温度係数（ＴＣＲ）が高い材料が用いられ
る。従って、この材料の所要面積を低減することで、こ
の材料の低抵抗器全体としての抵抗温度係数への寄与分
が低減し、低抵抗器全体としての抵抗温度係数の改良が
可能である。Further, by making the length B of the voltage detection terminals 15 and 16 shorter than the generally used length B '(= A), the resistance temperature coefficient (TCR) of the low resistor is improved. Is possible. That is, as the material forming the voltage detection terminals 15 and 16, a material having a relatively high temperature coefficient of resistance (TCR) such as nickel or nickel alloy is used as described above. Therefore, by reducing the required area of this material, the contribution of this material to the temperature coefficient of resistance of the low resistor as a whole is reduced, and the temperature coefficient of resistance of the low resistor as a whole can be improved.
【００１６】図３は、この実施形態の低抵抗器の変形例
を示す。この抵抗器においては、電圧検出端子（検出用
端子）２１，２２の幅を図示するように全幅に対して狭
くしたものである。これにより、電圧検出端子１５，１
６の面積を更に低減することができるので、この端子を
構成する材料の比較的高い抵抗温度係数の寄与分が更に
減少し、全体として更に低い抵抗温度係数が得られる。
この実施形態においては、従来から一般に用いられてい
る電圧検出端子の長さＢ’を採用したときに１００ｐｐ
ｍ／℃程度であったものが、３０ｐｐｍ／℃程度に全体
としての抵抗温度係数の低減が可能である。FIG. 3 shows a modification of the low resistor of this embodiment. In this resistor, the widths of the voltage detection terminals (detection terminals) 21 and 22 are made narrower than the entire width as shown in the figure. As a result, the voltage detection terminals 15 and 1
Since the area of 6 can be further reduced, the contribution of the relatively high resistance temperature coefficient of the material forming this terminal is further reduced, and an even lower resistance temperature coefficient is obtained as a whole.
In this embodiment, 100 pp is obtained when the length B ′ of the voltage detection terminal which has been generally used conventionally is adopted.
Although it was about m / ° C, the temperature coefficient of resistance as a whole can be reduced to about 30 ppm / ° C.
【００１７】尚、電流端子１３，１４の位置は変わらな
いので、抵抗体１２内部の電流による電位分布としては
図２に示すものと同様である。従って、図１に示す実施
形態の抵抗器と同様に電圧降下の遷移領域部分の影響を
受けず、これにより精度の高い電圧検出が可能なことは
同様である。Since the positions of the current terminals 13 and 14 do not change, the potential distribution due to the current inside the resistor 12 is the same as that shown in FIG. Therefore, similarly to the resistor of the embodiment shown in FIG. 1, it is not affected by the transition region portion of the voltage drop, and similarly, it is possible to detect the voltage with high accuracy.
【００１８】図４は、本発明の第２の実施形態の低抵抗
器を示す。第１の実施形態の低抵抗器と同様に、ミリオ
ーム領域の低抵抗値を有する抵抗体１２に、その下面に
電流端子（電極）２３，２４を備え、その上面側にボン
ディングパッドを形成する電圧検出端子（検出用端子）
２５，２６が配置されている。ここで、電流端子２３，
２４は銅又は銅合金の高導電性材料からなる金属薄片が
圧着又は溶着により抵抗体１２に固定されている。この
電流端子２３，２４は、図６に示す従来の電流端子構造
と異なり、抵抗体端部から長手方向に離隔して、抵抗体
１２の内側寄りに配置されている。FIG. 4 shows a low resistor according to a second embodiment of the present invention. Similar to the low resistor of the first embodiment, a resistor 12 having a low resistance value in the milliohm region is provided with current terminals (electrodes) 23 and 24 on its lower surface, and a voltage for forming a bonding pad on its upper surface side. Detection terminal (detection terminal)
25 and 26 are arranged. Here, the current terminal 23,
A thin metal piece 24 made of a highly conductive material such as copper or a copper alloy is fixed to the resistor 12 by pressure bonding or welding. Unlike the conventional current terminal structure shown in FIG. 6, the current terminals 23 and 24 are arranged inwardly of the resistor 12 while being separated from the end of the resistor in the longitudinal direction.
【００１９】抵抗体１１の上面に設けられた電圧検出端
子２５，２６は、ボンディングパッドを形成し、例えば
ニッケル又はニッケルを含む合金の薄片を圧着又は溶着
等により抵抗体に固着することで形成される。ここで、
電圧検出端子２５，２６は、抵抗体１２の長手方向の両
端部の端縁に沿って配置され、その内側の端縁３２ａ，
３２ｂは抵抗体１２の裏面側の電流端子２３，２４の内
側の端縁３３ａ，３３ｂよりも外側に位置している。従
って、電圧検出端子２５，２６は電流端子２３，２４よ
りも全体として外側に位置している。The voltage detection terminals 25 and 26 provided on the upper surface of the resistor 11 are formed by forming bonding pads and fixing thin pieces of nickel or an alloy containing nickel to the resistors by pressure bonding or welding. It here,
The voltage detection terminals 25, 26 are arranged along the edges of both ends of the resistor 12 in the longitudinal direction, and the inner edges 32a, 32a,
32b is located outside the inner edges 33a and 33b of the current terminals 23 and 24 on the back surface side of the resistor 12. Therefore, the voltage detection terminals 25 and 26 are located outside the current terminals 23 and 24 as a whole.
【００２０】電流端子２３，２４の間に電流を供給した
ときに抵抗体１２内に形成される電位分布Ｖは図２に示
すものと略同様となる。そして、電圧検出端子２５，２
６は、上述したようにそれらの内側端縁が電流端子２
３，２４の内側端縁よりも外側に位置しているので、図
２に示す電圧検出端子１５，１６と同じ位置関係とな
る。このため、電圧検出端子２５，２６間では、電位分
布Ｖの遷移領域を完全にカバーすることができる。従っ
て、図２に示す長さＢ’（＝Ａ）を有する電圧検出端子
と比較して電圧降下のロス分を略ゼロとすることができ
る。これにより、精度の高い電圧検出が可能となること
は上述した各実施形態と同様である。The potential distribution V formed in the resistor 12 when a current is supplied between the current terminals 23 and 24 is substantially the same as that shown in FIG. Then, the voltage detection terminals 25, 2
6, the inner edges of the current terminals 2 are the current terminals 2 as described above.
Since they are located outside the inner edges of 3, 24, they have the same positional relationship as the voltage detection terminals 15, 16 shown in FIG. Therefore, the transition region of the potential distribution V can be completely covered between the voltage detection terminals 25 and 26. Therefore, as compared with the voltage detection terminal having the length B ′ (= A) shown in FIG. 2, the loss of the voltage drop can be made substantially zero. This makes it possible to detect a voltage with high accuracy, as in the above-described embodiments.
【００２１】図５は、上記第２の実施形態の低抵抗器の
変形例を示す。図４に示す低抵抗器との相違点は、電圧
検出端子（検出用端子）２７，２８として幅方向のサイ
ズを小さくしている。即ち、この電圧検出端子２７，２
８は電流端子２３，２４よりも外側に位置し、且つその
サイズが小さくなっている。従って、電流端子２３，２
４間に流れる電流により抵抗体１２の内部に形成される
電位分布Ｖの遷移領域の部分を完全にカバーし、これに
より遷移領域における電圧降下のロス分を殆どゼロとす
ることができることは、上述した各実施形態と同様であ
る。そして、この実施形態によれば、電圧検出端子２
７，２８が図４に示す電圧検出端子２５，２６に対して
小さなサイズとなっているので、この材料の比較的高い
抵抗温度係数の寄与分が小さくなり、全体としての抵抗
温度係数（ＴＣＲ）を低減することができる。FIG. 5 shows a modification of the low resistor of the second embodiment. The difference from the low resistor shown in FIG. 4 is that the size in the width direction is reduced as the voltage detection terminals (detection terminals) 27 and 28. That is, the voltage detection terminals 27, 2
8 is located outside the current terminals 23 and 24 and has a small size. Therefore, the current terminals 23, 2
It is possible to completely cover the portion of the transition region of the potential distribution V formed inside the resistor 12 by the current flowing between the four and thereby make the loss of the voltage drop in the transition region almost zero. It is similar to each of the embodiments described above. And according to this embodiment, the voltage detection terminal 2
Since 7, 28 are smaller than the voltage detecting terminals 25, 26 shown in FIG. 4, the contribution of the relatively high temperature coefficient of resistance of this material is small, and the temperature coefficient of resistance (TCR) as a whole is small. Can be reduced.
【００２２】尚、上記実施形態では、電圧検出端子（電
極）及び電流検出端子（電極）として、金属薄片を抵抗
体に圧着又は溶着により固定する例について述べたが、
例えばスパッタリングや蒸着又はめっき等の手段により
電極を形成してももちろんよい。In the above embodiment, as the voltage detecting terminal (electrode) and the current detecting terminal (electrode), the example in which the thin metal piece is fixed to the resistor by crimping or welding is described.
Of course, the electrodes may be formed by means such as sputtering, vapor deposition or plating.
【００２３】又、上述した各端子（電極）は矩形状の例
についてのみ述べたが、例えば台形状等の各種の形状を
採用してもよい。又、上記実施形態では抵抗体が裸の状
態で図示しているが、これを外装樹脂等により被覆して
ももちろんよい。Further, although the above-mentioned respective terminals (electrodes) have been described only with respect to the rectangular shape, various shapes such as a trapezoid may be adopted. Further, in the above-described embodiment, the resistor is shown in a bare state, but it may of course be covered with an exterior resin or the like.
【００２４】[0024]
【発明の効果】以上説明したように本発明によれば、電
流の検出精度が高く、且つ抵抗温度係数（ＴＣＲ）の小
さな低抵抗器を提供することができる。As described above, according to the present invention, it is possible to provide a low resistor having a high current detection accuracy and a small resistance temperature coefficient (TCR).
【図１】本発明の第１の実施形態の低抵抗器を示す斜視
図である。FIG. 1 is a perspective view showing a low resistor according to a first embodiment of the present invention.
【図２】上記低抵抗器の断面形状とその電位分布を示す
図である。FIG. 2 is a diagram showing a cross-sectional shape of the low resistor and its potential distribution.
【図３】上記第１の実施形態の低抵抗器の変形例を示す
斜視図である。FIG. 3 is a perspective view showing a modified example of the low resistor of the first embodiment.
【図４】本発明の第２の実施形態の低抵抗器を示す斜視
図である。FIG. 4 is a perspective view showing a low resistor according to a second embodiment of the present invention.
【図５】上記第２の実施形態の低抵抗器の変形例を示す
図である。FIG. 5 is a diagram showing a modification of the low resistance device of the second embodiment.
【図６】従来の低抵抗器の構成例を示す斜視図である。FIG. 6 is a perspective view showing a configuration example of a conventional low resistor.
１２ 抵抗体
１３，１４、２３，２４ 電流端子
１５，１６，２１，２２，２５，２６，２７，２８
電圧検出端子12 resistors 13, 14, 23, 24 current terminals 15, 16, 21, 22, 25, 26, 27, 28
Voltage detection terminal
───────────────────────────────────────────────────── フロントページの続き (72)発明者 田畑 真志 長野県上伊那郡箕輪町大字中箕輪14016 コーア株式会社内 (72)発明者 水月 洋 長野県上伊那郡箕輪町大字中箕輪14016 コーア株式会社内 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Masashi Tabata 14016 Nakaminowa, Minowa-cho, Kamiina-gun, Nagano Prefecture Inside Coer Co., Ltd. (72) Inventor Hiroshi Suigetsu 14016 Nakaminowa, Minowa-cho, Kamiina-gun, Nagano Prefecture Inside Coer Co., Ltd.
Claims (5)
抵抗体の一面の両端部側に配置された一対の電極と、前
記抵抗体の他面の両端部側に配置された一対の検出用端
子とからなり、一対の前記検出用端子の間隔は、一対の
前記電極の間隔よりも広いことを特徴とする低抵抗器。1. A plate-shaped resistor made of a resistance alloy, a pair of electrodes arranged on both ends of one surface of the resistor, and a pair of electrodes arranged on both ends of the other surface of the resistor. And a gap between the pair of detection terminals is wider than a gap between the pair of electrodes.
置されていることを特徴とする請求項１に記載の低抵抗
器。2. The low resistor according to claim 1, wherein the detection terminal is arranged outside the electrode.
ズよりも小さくしたことを特徴とする請求項１乃至請求
項２いずれかに記載の低抵抗器。3. The low resistor according to claim 1, wherein the size of the detection terminal is smaller than the size of the electrode.
における前記電極の幅の略１／２とからなる位置から外
側に配置されていることを特徴とする請求項１乃至３の
いずれか１項に記載の低抵抗器。4. The detection terminal is arranged outside from a position formed by approximately 1/2 of the width of the electrode in the longitudinal direction of the low resistance device. The low resistor according to item 1.
子の幅は、低抵抗器の幅方向における前記電極の幅より
も小さいことを特徴とする請求項１乃至請求項４のいず
れか１項に記載の低抵抗器。5. The width of the detection terminal in the width direction of the low resistance device is smaller than the width of the electrode in the width direction of the low resistance device. A low resistor according to item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001395317A JP2003197403A (en) | 2001-12-26 | 2001-12-26 | Low-resistance resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001395317A JP2003197403A (en) | 2001-12-26 | 2001-12-26 | Low-resistance resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003197403A true JP2003197403A (en) | 2003-07-11 |
Family
ID=27601767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001395317A Pending JP2003197403A (en) | 2001-12-26 | 2001-12-26 | Low-resistance resistor |
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| JP (1) | JP2003197403A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013504213A (en) * | 2009-09-04 | 2013-02-04 | ヴィシェイ デイル エレクトロニクス，インコーポレイテッド | Resistor with resistance temperature coefficient (TCR) compensation function / action |
| US10083781B2 (en) | 2015-10-30 | 2018-09-25 | Vishay Dale Electronics, Llc | Surface mount resistors and methods of manufacturing same |
| US10438729B2 (en) | 2017-11-10 | 2019-10-08 | Vishay Dale Electronics, Llc | Resistor with upper surface heat dissipation |
| US11555831B2 (en) | 2020-08-20 | 2023-01-17 | Vishay Dale Electronics, Llc | Resistors, current sense resistors, battery shunts, shunt resistors, and methods of making |
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2001
- 2001-12-26 JP JP2001395317A patent/JP2003197403A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013504213A (en) * | 2009-09-04 | 2013-02-04 | ヴィシェイ デイル エレクトロニクス，インコーポレイテッド | Resistor with resistance temperature coefficient (TCR) compensation function / action |
| US8878643B2 (en) | 2009-09-04 | 2014-11-04 | Vishay Dale Electronics, Inc. | Resistor with temperature coefficient of resistance (TCR) compensation |
| US9400294B2 (en) | 2009-09-04 | 2016-07-26 | Vishay Dale Electronics, Llc | Resistor with temperature coefficient of resistance (TCR) compensation |
| US9779860B2 (en) | 2009-09-04 | 2017-10-03 | Vishay Dale Electronics, Llc | Resistor with temperature coefficient of resistance (TCR) compensation |
| US10217550B2 (en) | 2009-09-04 | 2019-02-26 | Vishay Dale Electronics, Llc | Resistor with temperature coefficient of resistance (TCR) compensation |
| US10796826B2 (en) | 2009-09-04 | 2020-10-06 | Vishay Dale Electronics, Llc | Resistor with temperature coefficient of resistance (TCR) compensation |
| US11562838B2 (en) | 2009-09-04 | 2023-01-24 | Vishay Dale Electronics, Llc | Resistor with temperature coefficient of resistance (TCR) compensation |
| US10083781B2 (en) | 2015-10-30 | 2018-09-25 | Vishay Dale Electronics, Llc | Surface mount resistors and methods of manufacturing same |
| US10418157B2 (en) | 2015-10-30 | 2019-09-17 | Vishay Dale Electronics, Llc | Surface mount resistors and methods of manufacturing same |
| US10438729B2 (en) | 2017-11-10 | 2019-10-08 | Vishay Dale Electronics, Llc | Resistor with upper surface heat dissipation |
| US11555831B2 (en) | 2020-08-20 | 2023-01-17 | Vishay Dale Electronics, Llc | Resistors, current sense resistors, battery shunts, shunt resistors, and methods of making |
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