JP2003188040A - Electronic component and manufacturing method thereof - Google Patents
Electronic component and manufacturing method thereofInfo
- Publication number
- JP2003188040A JP2003188040A JP2001387039A JP2001387039A JP2003188040A JP 2003188040 A JP2003188040 A JP 2003188040A JP 2001387039 A JP2001387039 A JP 2001387039A JP 2001387039 A JP2001387039 A JP 2001387039A JP 2003188040 A JP2003188040 A JP 2003188040A
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- resin
- insulating layer
- manufacturing
- component according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は電子部品とその製造
方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component and its manufacturing method.
【０００２】[0002]
【従来の技術】従来の電子部品、例えば、チップ抵抗器
等のチップ型電子部品においては、電子素子に一組の電
極が備えられ、この一組の電極を分離するように絶縁物
が備えられている。また、配線基板においては絶縁物の
基板を用いて電極間の絶縁性を確保している。2. Description of the Related Art In a conventional electronic component, for example, a chip type electronic component such as a chip resistor, an electronic element is provided with a set of electrodes, and an insulator is provided so as to separate the set of electrodes. ing. In addition, in the wiring board, a substrate made of an insulating material is used to ensure insulation between the electrodes.
【０００３】そして、電極材料としてはＡｇ，Ｃｕ，Ｓ
ｎ，Ｐｂ等の電気伝導度が良好な金属が用いられてい
る。And, as the electrode material, Ag, Cu, S
A metal having good electric conductivity such as n or Pb is used.
【０００４】[0004]
【発明が解決しようとする課題】上記電子部品に水分が
浸入した場合上記金属がイオン化し電極間の絶縁物の上
を移動する、いわゆるマイグレーションが発生しやすく
なり、その結果、電極間の絶縁性が低下しショート等の
不具合が発生する。特に近年の電子部品の小型化により
電極間がより狭くなり、上記不都合がさらに発生しやす
いという問題点があった。そこでこの問題点を解決し、
マイグレーションを抑制することを目的とする。When water penetrates into the electronic component, the metal ionizes and migrates over the insulator between the electrodes, so-called migration easily occurs, resulting in insulation between the electrodes. Will occur and problems such as short circuits will occur. In particular, due to the recent miniaturization of electronic components, the gap between electrodes becomes narrower, and the above-mentioned inconvenience is more likely to occur. So I solved this problem,
The purpose is to suppress migration.
【０００５】[0005]
【課題を解決するための手段】この目的を達成するため
に本発明の請求項１に記載の発明は、セラミック素体
と、このセラミック素体の上に導電材料からなる膜厚１
０μｍ以上のパターンと、このパターンおよび前記セラ
ミック素体の上に結晶化ガラスからなる無機絶縁層を備
えた電子部品素体の少なくとも一対の少なくとも端面上
に電極を備え、前記電子部品素体の前記電極の未形成の
外表面に樹脂絶縁層を備え、この樹脂絶縁層の少なくと
も一部は前記電子部品素体の内表面、前記無機絶縁層と
前記セラミック素体の界面および前記無機絶縁層と前記
パターンの界面に備えた電子部品であり、内表面他異種
材料間に含浸された樹脂絶縁層によりマイグレーション
を防ぐことができる。In order to achieve this object, the invention according to claim 1 of the present invention provides a ceramic body and a film thickness 1 made of a conductive material on the ceramic body.
An electrode is provided on at least a pair of at least a pair of end faces of an electronic component body having a pattern of 0 μm or more and an inorganic insulating layer made of crystallized glass on the pattern and the ceramic body, A resin insulating layer is provided on the outer surface of the electrode not formed, and at least a part of this resin insulating layer is the inner surface of the electronic component element body, the interface between the inorganic insulating layer and the ceramic element body, and the inorganic insulating layer and the This is an electronic component provided at the interface of the pattern, and migration can be prevented by the resin insulating layer impregnated between different materials of the inner surface.
【０００６】請求項２に記載の発明は、樹脂絶縁層が金
属アルコキシド又は樹脂の少なくとも一方からなる請求
項１に記載の電子部品であり、内表面他異種材料間に含
浸された樹脂絶縁層によりマイグレーションを防ぐこと
ができる。The invention according to claim 2 is the electronic component according to claim 1, in which the resin insulating layer is made of at least one of a metal alkoxide and a resin, and the resin insulating layer impregnated between the inner surface and other different materials is used. Migration can be prevented.
【０００７】請求項３に記載の発明は、樹脂絶縁層は金
属アルコキシドからなり、この金属アルコキシドは、シ
リコン、チタン、アルミニウム、ジルコニウム、イット
リウム、マグネシウムから選ばれる少なくとも１種類の
金属を有するものである請求項１に記載の電子部品であ
り、内表面他異種材料間に含浸された金属アルコキシド
によりマイグレーションを防ぐことができる。According to a third aspect of the present invention, the resin insulating layer is made of a metal alkoxide, and the metal alkoxide has at least one metal selected from silicon, titanium, aluminum, zirconium, yttrium and magnesium. The electronic component according to claim 1, wherein migration can be prevented by the metal alkoxide impregnated between different materials on the inner surface.
【０００８】請求項４に記載の発明は、樹脂絶縁層の樹
脂材料がシリコン系樹脂、エポキシ系樹脂、フッ素系樹
脂、アクリル系樹脂、ポリブタジエン系樹脂、フェノー
ル系樹脂のうちの少なくとも１種類である請求項１に記
載の電子部品であり、上記材料は硬化後耐熱性を有し、
絶縁性、撥水性がともに高く、また、吸水率が小さい樹
脂であるので内表面他異種材料間に含浸された樹脂によ
りマイグレーションを防ぐことができる。According to a fourth aspect of the present invention, the resin material of the resin insulation layer is at least one of a silicon resin, an epoxy resin, a fluorine resin, an acrylic resin, a polybutadiene resin, and a phenol resin. The electronic component according to claim 1, wherein the material has heat resistance after curing,
Since it is a resin having both high insulating properties and high water repellency and a low water absorption rate, migration can be prevented by the resin impregnated between different materials on the inner surface.
【０００９】請求項５に記載の発明は、電子部品素体の
内表面に備えた樹脂絶縁層は、１０μｍ以上である請求
項１に記載の電子部品であり、充分な厚さの樹脂絶縁層
であるのでマイグレーションを防ぐことができる。The invention according to claim 5 is the electronic component according to claim 1, wherein the resin insulating layer provided on the inner surface of the electronic component element body has a thickness of 10 μm or more, and the resin insulating layer having a sufficient thickness. Therefore, migration can be prevented.
【００１０】請求項６に記載の発明は、電子部品素体の
外表面は光沢を有する請求項１に記載の電子部品であ
り、表面に光沢を有するので、電子部品を選別する際に
完成品か否かを容易に判断することができる。The invention according to claim 6 is the electronic component according to claim 1 in which the outer surface of the electronic component element body has gloss, and since the surface has gloss, a finished product is selected when selecting the electronic component. Whether or not it can be easily determined.
【００１１】請求項７に記載の発明は、セラミック素体
に導電材料からなるパターンを１０μｍ以上の膜厚で形
成する工程と、前記パターン上に結晶化ガラスからなる
無機絶縁層を形成する工程と、前記無機絶縁層まで形成
した前記セラミック素体を切断して電子部品素体とする
工程と、この電子部品素体の外表面に少なくとも一対の
電極を所定の間隔を設けて形成する工程と、この電子部
品素体の内部から水分を除去する工程と、電子部品素体
の表面を少なくとも有機物を含む含浸液に接触させる工
程と、この有機物の一部を前記電子部品素体の外表面か
ら除去した後で有機物を硬化させる工程と、前記硬化し
た有機物を研磨により一部除去する工程を含む電子部品
の製造方法であり、この方法によると電子部品素体の内
表面他異種材料間に水分がなく、かつ樹脂が含浸される
のでマイグレーションを防ぐことができる。According to a seventh aspect of the present invention, there is provided a step of forming a pattern made of a conductive material on the ceramic body with a film thickness of 10 μm or more, and a step of forming an inorganic insulating layer made of crystallized glass on the pattern. A step of cutting the ceramic body formed up to the inorganic insulating layer to form an electronic component body, and a step of forming at least a pair of electrodes on the outer surface of the electronic component body at a predetermined interval, A step of removing water from the inside of the electronic component element body; a step of bringing the surface of the electronic component element body into contact with an impregnating liquid containing at least an organic matter; and removing a part of the organic matter from the outer surface of the electronic component element body. A method of manufacturing an electronic component including a step of curing an organic substance after the step of removing the cured organic substance and a step of partially removing the cured organic substance by polishing. Water without and the resin is impregnated can be prevented migration.
【００１２】請求項８に記載の発明は、セラミック素体
にパターンを形成する工程の後に化学エッチングにより
前記パターン間に飛散している導体材料を除去する工程
を有する請求項７に記載の電子部品の製造方法であり、
パターン間の絶縁性を高くすることができるので歩留ま
りも向上し、マイグレーションの加速を防ぐことができ
る。The invention according to claim 8 has the step of removing the conductive material scattered between the patterns by chemical etching after the step of forming the pattern on the ceramic body. Is a manufacturing method of
Since the insulation between the patterns can be increased, the yield can be improved, and the acceleration of migration can be prevented.
【００１３】請求項９に記載の発明は、無機絶縁層を形
成する工程において、結晶化ガラスペーストを導電パタ
ーン上に印刷し、４〜１００ｋｇ／ｃｍ2に加圧した後
で、ペーストを乾燥して無機絶縁層から脱泡する請求項
７に記載の電子部品の製造方法であり、異種材料間の界
面から気泡を除去できるので一層緻密になり、その結果
としてマイグレーションを防ぐことができる。According to a ninth aspect of the present invention, in the step of forming the inorganic insulating layer, the crystallized glass paste is printed on the conductive pattern, pressurized to 4 to 100 kg / cm 2 , and then the paste is dried. The method of manufacturing an electronic component according to claim 7, further comprising defoaming from the inorganic insulating layer, wherein the bubbles can be removed from the interface between different kinds of materials, resulting in higher density, and consequently migration can be prevented.
【００１４】請求項１０に記載の発明は、電子部品素体
の表面を含浸液に接触させる工程を複数回繰り返す請求
項７に記載の電子部品の製造方法であり、電子部品素体
内部に十分に含浸液を含浸することができるため、より
一層マイグレーションを防ぐことができる。The invention according to claim 10 is the method of manufacturing an electronic component according to claim 7, wherein the step of bringing the surface of the electronic component element body into contact with the impregnating liquid is repeated a plurality of times, and the process is sufficiently performed inside the electronic component element element body. Since it can be impregnated with the impregnating liquid, migration can be further prevented.
【００１５】請求項１１に記載の発明は、樹脂絶縁層の
材料として金属アルコキシド又は樹脂の少なくとも一方
を用いる請求項７に記載の電子部品の製造方法であり、
マイグレーションを防ぐことができる。An eleventh aspect of the present invention is the method of manufacturing an electronic component according to the seventh aspect, wherein at least one of a metal alkoxide and a resin is used as a material for the resin insulating layer.
Migration can be prevented.
【００１６】請求項１２に記載の発明は、有機物は金属
アルコキシドを含み、この金属アルコキシドとして、シ
リコン、チタン、アルミニウム、ジルコニウム、イット
リウム、マグネシウムのうちの少なくとも１種類を用い
る請求項７に記載の電子部品の製造方法であり、マイグ
レーションを防ぐことができる。According to a twelfth aspect of the present invention, the organic substance contains a metal alkoxide, and at least one kind of silicon, titanium, aluminum, zirconium, yttrium and magnesium is used as the metal alkoxide. It is a method of manufacturing parts and can prevent migration.
【００１７】請求項１３に記載の発明は、有機物は樹脂
を含み、この樹脂材料として、シリコン系樹脂、エポキ
シ系樹脂、フッ素系樹脂、アクリル系樹脂、ポリブタジ
エン系樹脂、フェノール系樹脂のうちの少なくとも１種
類を用いる請求項７に記載の電子部品の製造方法であ
り、マイグレーションを防ぐことができる。According to a thirteenth aspect of the present invention, the organic substance contains a resin, and as the resin material, at least one of a silicon resin, an epoxy resin, a fluorine resin, an acrylic resin, a polybutadiene resin, and a phenol resin is used. The method of manufacturing an electronic component according to claim 7 uses one type, and migration can be prevented.
【００１８】請求項１４に記載の発明は、電子部品素体
の表面を含浸液に接触させた状態で４〜１００ｋｇ／ｃ
ｍ2に加圧する請求項７に記載の電子部品の製造方法で
あり、含浸液を電子部品素体内部に容易に含浸させるこ
とができる。In the fourteenth aspect of the present invention, the surface of the electronic component element body is brought into contact with the impregnating liquid to be 4 to 100 kg / c.
The method for producing an electronic component according to claim 7, wherein the pressure is applied to m 2 , and the impregnating liquid can be easily impregnated into the electronic component body.
【００１９】請求項１５に記載の発明は、電子部品素体
の外表面の含浸液の除去を遠心分離、前記含浸液が可溶
な液体による洗浄、前記含浸液と反応しない粉末との接
触のうち少なくとも一つを用いて行う請求項７に記載の
電子部品の製造方法であり、不要な含浸液を容易に除去
することができる。According to a fifteenth aspect of the invention, the removal of the impregnating liquid on the outer surface of the electronic component element body is centrifuged, the impregnating liquid is washed with a soluble liquid, and the impregnating liquid is not contacted with a powder. The method of manufacturing an electronic component according to claim 7, wherein at least one of them is used, and the unnecessary impregnating liquid can be easily removed.
【００２０】請求項１６に記載の発明は、粉末は、Ｓｉ
Ｏ2，ＳｉＣ，ＺｒＯ2，Ａｌ2Ｏ3，ＭｇＯのうち少なく
とも１種類を含んでいる請求項１５に記載の電子部品の
製造方法であり、上記粉末は含浸液と反応せず含浸液を
吸収させることができるので不要な含浸液を容易に除去
することができる。According to a sixteenth aspect of the invention, the powder is Si
The method for producing an electronic component according to claim 15, wherein the powder contains at least one of O 2 , SiC, ZrO 2 , Al 2 O 3 , and MgO, and the powder does not react with the impregnating liquid and absorbs the impregnating liquid. It is possible to remove unnecessary impregnating liquid easily.
【００２１】請求項１７に記載の発明は、研磨は少なく
とも硬化した有機物をその外表面に有する電子部品素体
と液体とを入れた容器を運動させて行う請求項７に記載
の電子部品の製造方法であり、後工程に支障のない程度
に外部電極表面上の有機物を除去することができる。According to a seventeenth aspect of the present invention, polishing is performed by moving a container containing a liquid and an electronic component body having at least a cured organic substance on its outer surface, and manufacturing the electronic component according to the seventh aspect. This is a method, and organic substances on the surface of the external electrode can be removed to the extent that they do not hinder the subsequent steps.
【００２２】[0022]
【発明の実施の形態】以下、本発明の一実施の形態につ
いて、添付図面を参照しながら説明する。なお、電子部
品として厚膜コンデンサを用いた。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the accompanying drawings. A thick film capacitor was used as the electronic component.
【００２３】図１（ａ）は本実施の形態における厚膜コ
ンデンサの断面図であり、図１（ｂ）はそのパターン図
である。内部電極４は材料としてＡｇペーストが用いら
れ凹版転写法によりアルミナなどのセラミック素体３の
上に形成される。内部電極４は８５０℃で焼成され、パ
ターン幅２０μｍ、パターン間隔２０μｍ、パターン膜
厚１５μｍの櫛歯状パターンに高膜厚で形成した。この
内部電極４と電気的に接続された外部電極５は少なくと
も三重構造となっており、材料として内層５ａはＡｇ、
中層５ｂはＮｉ、外層５ｃはＳｎが用いられている。ま
た内部電極４の上には結晶化ガラスペーストを用いてス
クリーン印刷により無機絶縁層１を形成する。この無機
絶縁層１も８５０℃で焼成される。FIG. 1A is a sectional view of the thick film capacitor according to the present embodiment, and FIG. 1B is a pattern diagram thereof. The internal electrode 4 is formed on the ceramic body 3 such as alumina by an intaglio transfer method using Ag paste as a material. The internal electrodes 4 were fired at 850 ° C. and formed into a comb-teeth pattern having a pattern width of 20 μm, a pattern interval of 20 μm, and a pattern film thickness of 15 μm with a high film thickness. The outer electrode 5 electrically connected to the inner electrode 4 has at least a triple structure, and the inner layer 5a is made of Ag as a material.
Ni is used for the middle layer 5b and Sn is used for the outer layer 5c. Further, the inorganic insulating layer 1 is formed on the internal electrodes 4 by screen printing using a crystallized glass paste. This inorganic insulating layer 1 is also fired at 850 ° C.
【００２４】内表面絶縁層１ａはシリコン樹脂で厚膜コ
ンデンサ内部の気孔表面を被覆あるいは気孔に充填させ
て形成した層である。この内表面絶縁層１ａは無機絶縁
層１とセラミック素体３の界面６、無機絶縁層１と内部
電極４の界面７にも有効に形成される。また外表面絶縁
層２はシリコン樹脂で形成されたものである。The inner surface insulating layer 1a is a layer formed by coating or filling the pore surface inside the thick film capacitor with silicon resin. The inner surface insulating layer 1a is also effectively formed on the interface 6 between the inorganic insulating layer 1 and the ceramic body 3 and the interface 7 between the inorganic insulating layer 1 and the internal electrode 4. The outer surface insulating layer 2 is made of silicone resin.
【００２５】図２は上記厚膜コンデンサの製造工程を示
している。まずアルミナ基板３の両面にＡｇペーストを
用いて凹版転写法で内部電極４のパターンを形成し
（Ａ）、８５０℃にて焼成する（Ｂ）。焼成された内部
電極４のパターンの周辺部には非常に微小に飛散された
Ａｇ粉が存在するので、これを除去するために３０％濃
度のＨＮＯ3にて約０．５〜２分間の化学エッチングを
施し（Ｃ）、純水にて洗浄する。次いで結晶化ガラスペ
ーストを用いてスクリーン印刷法で無機絶縁層１を形成
する（Ｄ）。この無機絶縁層１は印刷直後に４〜１００
ｋｇ／ｃｍ2に加圧し（Ｅ）、結晶化ガラスペーストと
アルミナ基板の界面、結晶化ガラスペーストと内部電極
４の界面に残存する気孔を除去してから乾燥した後焼成
される（Ｆ）。この加圧により上記界面は気孔の少ない
より緻密なものとなる。FIG. 2 shows a manufacturing process of the thick film capacitor. First, a pattern of the internal electrodes 4 is formed on both surfaces of the alumina substrate 3 by using an intaglio transfer method using Ag paste (A) and baked at 850 ° C. (B). Since very finely scattered Ag powder is present in the peripheral portion of the pattern of the fired internal electrode 4, in order to remove it, the chemistry of 30% HNO 3 for about 0.5 to 2 minutes is used. Etching (C) and washing with pure water. Next, the crystallized glass paste is used to form the inorganic insulating layer 1 by a screen printing method (D). This inorganic insulating layer 1 has a thickness of 4 to 100 immediately after printing.
The pressure is applied to kg / cm 2 (E), the pores remaining at the interface between the crystallized glass paste and the alumina substrate and the interface between the crystallized glass paste and the internal electrode 4 are removed, dried and then fired (F). Due to this pressurization, the interface becomes more dense with less pores.
【００２６】次にスクリーン印刷されたアルミナ基板１
はダイサー等で切断されて個片にされ（Ｇ）、面取りす
る（Ｈ）。次に外部電極５ａを形成するのにＡｇペース
トを用いて塗布し（Ｉ）、６００℃で焼成される
（Ｊ）。続いて樹脂絶縁層の形成を行う。６００℃で焼
成された厚膜コンデンサは、完全に水分が除去されてい
るので、溶剤としてトルエン７５％を含むシリコン樹脂
に浸漬し、厚膜コンデンサの内部にシリコン樹脂を含浸
させる（Ｌ）。また、６００℃で焼成された後にしばら
く自然放置した場合この厚膜コンデンサは乾燥機や真空
装置、除湿装置等で水分率１０ｐｐｍ以下まで水分を除
去する（Ｋ）。Next, screen-printed alumina substrate 1
Is cut by a dicer or the like into individual pieces (G) and chamfered (H). Next, Ag paste is used to form the external electrodes 5a (I), and the external electrodes 5a are baked at 600 ° C. (J). Subsequently, the resin insulating layer is formed. Since the water content of the thick film capacitor baked at 600 ° C. is completely removed, the thick film capacitor is immersed in a silicon resin containing 75% of toluene as a solvent to impregnate the thick film capacitor with the silicon resin (L). Further, when the thick film capacitor is left to stand for a while after being baked at 600 ° C., the thick film capacitor removes water to a moisture content of 10 ppm or less by a dryer, a vacuum device, a dehumidifying device or the like (K).
【００２７】その後、厚膜コンデンサをシリコン樹脂に
浸漬したまま４〜１００ｋｇ／ｃｍ 2に加圧し（Ｍ）、
シリコン樹脂を更に厚膜コンデンサに含浸させるため、
例えば２分間保持した後厚膜コンデンサが使用される状
態である大気圧にもどす。この時の加圧力は厚膜コンデ
ンサの密度により決定する。つまり密度の大きい厚膜コ
ンデンサ程加圧力も大きくしてシリコン樹脂を含浸させ
やすくする。その後、シリコン樹脂より厚膜コンデンサ
を取り出し、ネットや金属製網かごに入れて、例えば内
径６０ｃｍの遠心分離装置にセットし、５００〜１５０
０ｒ／ｍｉｎで作動させ、厚膜コンデンサの外表面に付
着した余分なシリコン樹脂をおおまかに除去する
（Ｎ）。さらに金属製網かごごとトルエンに浸漬し
（Ｏ）、５〜６０秒間振動を与えた後取り出し、例えば
６０℃で速やかに加熱して厚膜コンデンサに付着してい
るトルエンを除去する。After that, the thick film capacitor was changed to silicon resin.
4 to 100 kg / cm while immersed 2Pressurize (M),
In order to further impregnate the thick film capacitor with silicon resin,
For example, after holding for 2 minutes, a thick film capacitor is used.
Return to atmospheric pressure. The pressing force at this time is the thick film capacitor.
It is determined by the density of the sensor. In other words, thick film
The pressure applied to the capacitor is also increased to impregnate the silicon resin.
Make it easier. After that, thick film capacitors than silicon resin
Take it out and put it in a net or a metal basket.
Set in a centrifuge with a diameter of 60 cm, 500-150
Operates at 0 r / min and attaches to the outer surface of thick film capacitors
Roughly remove excess silicone resin
(N). Further, immerse the metal net basket and toluene in
(O), take out after applying vibration for 5 to 60 seconds, for example,
Promptly heats at 60 ° C and adheres to thick film capacitors.
Remove toluene.
【００２８】また、トルエンの代わりに含浸液と反応し
ない粉末を用いる方法もある。この粉末としてはＳｉＯ
2，ＳｉＣ，ＺｒＯ2，Ａｌ2Ｏ3，ＭｇＯが挙げられ、そ
れぞれ単独でもしくは組み合わせて用いることができ
る。There is also a method of using a powder which does not react with the impregnating liquid instead of toluene. This powder is SiO
2 , SiC, ZrO 2 , Al 2 O 3 and MgO can be used, and each can be used alone or in combination.
【００２９】さて、この粉末を用いる場合は以下のよう
に行う。すなわち、遠心分離を行った厚膜コンデンサに
上記粉末を接触させることにより上記粉末に厚膜コンデ
ンサ外表面の余分なシリコン樹脂を吸い込ませた後ふる
い等を利用して厚膜コンデンサを分離する。その後厚膜
コンデンサを金属製網の上に並べシリコン樹脂の硬化温
度以上の温度（約１２５〜２００℃）で加熱しシリコン
樹脂の硬化を行う（Ｐ）。その際あらかじめシリコン樹
脂に含まれる溶剤を突沸しない温度にて充分に除去する
ことが望ましい。これにより形成される内表面絶縁層１
ａの厚みは、厚膜コンデンサとしての特性に影響を与え
ない範囲で出来るだけ大きい方が望ましく、さらには硬
化後のシリコン樹脂の内表面絶縁層１ａの厚みが一番薄
い部分で１０μｍ以上となることが望ましい。これはシ
リコン樹脂の粘度、溶剤率、減圧力、加圧力の選択によ
り調整することができる。その後、例えばポリエチレン
の容器に厚膜コンデンサ、ＳｉＣ製研磨材、水を入れて
密閉し、回転・振動等の機械的な方法で運動させること
により表面研磨を行い（Ｑ）、外部電極５ａ表面上のシ
リコン樹脂を後工程に影響を及ぼさない程度まで除去す
ることができる。すなわちこの表面研磨により厚膜コン
デンサの端面にはより機械ストレスが加わり、また硬化
後のシリコン樹脂は外部電極５ａよりも無機絶縁層１と
の接着強度が優位であるので、外部電極５ａ表面上のシ
リコン樹脂を選択的に除去することができる。When this powder is used, it is carried out as follows. That is, the thick film capacitor is separated by utilizing a sieve after sucking excess silicon resin on the outer surface of the thick film capacitor by bringing the powder into contact with the centrifuged thick film capacitor. After that, the thick film capacitors are arranged on a metal net and heated at a temperature (about 125 to 200 ° C.) higher than the curing temperature of the silicon resin to cure the silicon resin (P). At that time, it is desirable to sufficiently remove the solvent contained in the silicon resin beforehand at a temperature at which bumping does not occur. Inner surface insulating layer 1 formed by this
It is desirable that the thickness of a is as large as possible within a range that does not affect the characteristics of the thick film capacitor, and further, the thickness of the inner surface insulating layer 1a of the cured silicone resin is 10 μm or more at the thinnest portion. Is desirable. This can be adjusted by selecting the viscosity of the silicone resin, the solvent rate, the pressure reduction force, and the pressure. After that, for example, a thick-film capacitor, an abrasive made of SiC, and water are put into a polyethylene container and sealed, and the surface is polished by moving it by a mechanical method such as rotation and vibration (Q). The silicon resin can be removed to the extent that it does not affect the subsequent steps. That is, by this surface polishing, more mechanical stress is applied to the end surface of the thick film capacitor, and the cured silicone resin has a superior adhesive strength with the inorganic insulating layer 1 than the external electrode 5a. The silicon resin can be selectively removed.
【００３０】なお、さらに耐マイグレーション性を向上
させるためにシリコン樹脂浸漬から表面研磨までを複数
回、好ましくは２回繰り返すことが望ましい。In order to further improve the migration resistance, it is desirable to repeat the process from dipping the silicon resin to polishing the surface a plurality of times, preferably twice.
【００３１】なお、樹脂絶縁層の材料としては、上記シ
リコン系樹脂だけでなくエポキシ系樹脂、フッ素系樹
脂、アクリル系樹脂、ポリブタジエン系樹脂、フェノー
ル系樹脂を単独もしくは組み合わせて用いることも可能
である。As the material of the resin insulating layer, not only the above-mentioned silicone resin but also epoxy resin, fluorine resin, acrylic resin, polybutadiene resin, phenol resin can be used alone or in combination. .
【００３２】また、シリコン、チタン、アルミニウム、
ジルコニウム、イットリウム、マグネシウム等の金属ア
ルコキシドを単独もしくは組み合わせて用いることも可
能であり、上記樹脂と上記金属アルコキシドを組み合わ
せて用いてもよい。Also, silicon, titanium, aluminum,
It is also possible to use metal alkoxides such as zirconium, yttrium, and magnesium alone or in combination, and the above resin and metal alkoxide may be used in combination.
【００３３】以上の方法により、厚膜コンデンサ内部に
内表面絶縁層１ａ，６ａ，７ａを形成することにより耐
マイグレーション性に優れた厚膜コンデンサを得ること
ができる。By forming the inner surface insulating layers 1a, 6a and 7a inside the thick film capacitor by the above method, a thick film capacitor excellent in migration resistance can be obtained.
【００３４】なお、本実施の形態においては厚膜コンデ
ンサを例に説明したがこれに限定されるものではなく、
厚膜インダクタはもちろんバラン、カプラ、複合素子か
らなるフィルタ部品等様々な電子部品においても同様な
効果が得られる。Although the thick film capacitor has been described as an example in the present embodiment, the present invention is not limited to this.
Similar effects can be obtained not only in thick film inductors but also in various electronic components such as filter components including baluns, couplers and composite elements.
【００３５】また、電子部品の形状としてチップ型だけ
でなく部品の実装されたモジュール型などでもよく、特
定の形状、形態に限定されるものではない。The shape of the electronic component may be not only a chip type but also a module type in which components are mounted, and is not limited to a particular shape or form.
【００３６】[0036]
【発明の効果】以上のように本発明は、特に、電子部品
素体の内表面及び無機絶縁層とセラミック素体間及び無
機絶縁層と導電材料間に樹脂による絶縁層を設けたの
で、マイグレーションを抑制することができる。As described above, according to the present invention, since the insulating layer made of the resin is provided especially on the inner surface of the electronic component body, between the inorganic insulating layer and the ceramic body, and between the inorganic insulating layer and the conductive material, migration is caused. Can be suppressed.
【図１】（ａ）本発明の一実施の形態における厚膜コン
デンサの断面図
（ｂ）本発明の一実施の形態における厚膜コンデンサの
パターン図1A is a sectional view of a thick film capacitor according to an embodiment of the present invention, and FIG. 1B is a pattern diagram of a thick film capacitor according to an embodiment of the present invention.
【図２】本発明の一実施の形態における厚膜コンデンサ
の製造工程図FIG. 2 is a manufacturing process diagram of a thick film capacitor according to an embodiment of the present invention.
１ 無機絶縁層
１ａ 内表面絶縁層
２ 外表面絶縁層
３ セラミック素体
４ 内部電極
５ 外部電極
６ 無機絶縁層とセラミック素体間の界面
６ａ 無機絶縁層とセラミック素体間の界面に形成した
樹脂絶縁層
７ 無機絶縁層と導体材料間の界面
７ａ 無機絶縁層と導体材料間の界面に形成した樹脂絶
縁層1 Inorganic Insulation Layer 1a Inner Surface Insulation Layer 2 Outer Surface Insulation Layer 3 Ceramic Element 4 Internal Electrode 5 External Electrode 6 Interface 6a between Inorganic Insulation Layer and Ceramic Element 6a Resin Formed at Interface between Inorganic Insulation Layer and Ceramic Element Insulating layer 7 Interface 7a between inorganic insulating layer and conductor material Resin insulating layer formed at interface between inorganic insulating layer and conductor material
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中村 和幸 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 佐々木 理穂 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 5E082 AA01 AB02 BC40 EE04 EE35 GG10 HH26 HH43 HH47 HH48 MM22 PP07 PP09 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Kazuyuki Nakamura 1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric Sangyo Co., Ltd. (72) Inventor Riho Sasaki 1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric Sangyo Co., Ltd. F-term (reference) 5E082 AA01 AB02 BC40 EE04 EE35 GG10 HH26 HH43 HH47 HH48 MM22 PP07 PP09
Claims (17)
の上に導電材料からなる膜厚１０μｍ以上の内部電極の
パターンと、このパターンおよび前記セラミック素体の
上に結晶化ガラスからなる無機絶縁層を備えた電子部品
素体の少なくとも一対の少なくとも端面上に外部電極を
備え、前記電子部品素体の前記外部電極の未形成の外表
面に樹脂絶縁層を備え、この樹脂絶縁層の少なくとも一
部は前記電子部品素体の内表面、前記無機絶縁層と前記
セラミック素体の界面および前記無機絶縁層と前記パタ
ーンの界面に備えた電子部品。1. A ceramic body, a pattern of an internal electrode made of a conductive material and having a film thickness of 10 μm or more on the ceramic body, and an inorganic insulating layer made of crystallized glass on the pattern and the ceramic body. At least a pair of at least one end surface of the electronic component body provided with an external electrode, a resin insulating layer on the outer surface of the electronic component body not formed of the external electrode, at least a part of the resin insulating layer Is an electronic component provided on the inner surface of the electronic component body, the interface between the inorganic insulating layer and the ceramic body, and the interface between the inorganic insulating layer and the pattern.
脂の少なくとも一方からなる請求項１に記載の電子部
品。2. The electronic component according to claim 1, wherein the resin insulating layer is made of at least one of metal alkoxide and resin.
り、この金属アルコキシドは、シリコン、チタン、アル
ミニウム、ジルコニウム、イットリウム、マグネシウム
から選ばれる少なくとも１種類の金属を有するものであ
る請求項１に記載の電子部品。3. The electron according to claim 1, wherein the resin insulating layer is made of a metal alkoxide, and the metal alkoxide has at least one metal selected from silicon, titanium, aluminum, zirconium, yttrium, and magnesium. parts.
脂、エポキシ系樹脂、フッ素系樹脂、アクリル系樹脂、
ポリブタジエン系樹脂、フェノール系樹脂のうちの少な
くとも１種類である請求項１に記載の電子部品。4. The resin material of the resin insulation layer is a silicon resin, an epoxy resin, a fluorine resin, an acrylic resin,
The electronic component according to claim 1, wherein the electronic component is at least one of a polybutadiene resin and a phenol resin.
層は、１０μｍ以上である請求項１に記載の電子部品。5. The electronic component according to claim 1, wherein the resin insulation layer provided on the inner surface of the electronic component element body has a thickness of 10 μm or more.
求項１に記載の電子部品。6. The electronic component according to claim 1, wherein the outer surface of the electronic component element body has gloss.
電極のパターンを１０μｍ以上の膜厚で形成する工程
と、前記パターン上に結晶化ガラスからなる無機絶縁層
を形成する工程と、前記無機絶縁層まで形成された前記
セラミック素体を切断して電子部品素体とする工程と、
この電子部品素体の外表面に少なくとも一対の電極を所
定の間隔を設けて形成する工程と、この電子部品素体の
内部から水分を除去する工程と、電子部品素体の表面を
少なくとも有機物を含む含浸液に接触させる工程と、前
記有機物の一部を前記電子部品素体の外表面から除去し
た後で有機物を硬化させる工程と、前記硬化した有機物
を研磨により一部除去する工程を含む電子部品の製造方
法。7. A step of forming an internal electrode pattern made of a conductive material in a thickness of 10 μm or more on a ceramic body, a step of forming an inorganic insulating layer made of crystallized glass on the pattern, and the inorganic insulation. A step of cutting the ceramic body formed up to layers to form an electronic component body,
A step of forming at least a pair of electrodes on the outer surface of the electronic component element body at a predetermined interval, a step of removing water from the inside of the electronic component element body, and at least an organic substance on the surface of the electronic component element body. An electron including a step of contacting with an impregnating liquid containing, a step of curing the organic matter after removing a part of the organic matter from the outer surface of the electronic component element body, and a step of partially removing the cured organic matter by polishing Manufacturing method of parts.
程の後に化学エッチングにより前記パターン間に飛散し
ている導体材料を除去する工程を有する請求項７に記載
の電子部品の製造方法。8. The method of manufacturing an electronic component according to claim 7, further comprising a step of removing the conductive material scattered between the patterns by chemical etching after the step of forming the pattern on the ceramic body.
晶化ガラスペーストを導電パターン上に印刷し、４〜１
００ｋｇ／ｃｍ2に加圧した後で、前記ペーストを乾燥
して無機絶縁層から脱泡する請求項７に記載の電子部品
の製造方法。9. In the step of forming an inorganic insulating layer, a crystallized glass paste is printed on a conductive pattern to form a 4-1 layer.
The method for manufacturing an electronic component according to claim 7, wherein the paste is dried and degassed from the inorganic insulating layer after being pressurized to 00 kg / cm 2 .
せる工程を複数回繰り返す請求項７に記載の電子部品の
製造方法。10. The method of manufacturing an electronic component according to claim 7, wherein the step of bringing the surface of the electronic component base body into contact with the impregnating liquid is repeated a plurality of times.
キシド又は樹脂の少なくとも一方を用いる請求項７に記
載の電子部品の製造方法。11. The method of manufacturing an electronic component according to claim 7, wherein at least one of a metal alkoxide and a resin is used as a material of the resin insulating layer.
の金属アルコキシドは、シリコン、チタン、アルミニウ
ム、ジルコニウム、イットリウム、マグネシウムのうち
の少なくとも１種類を用いる請求項７に記載の電子部品
の製造方法。12. The method of manufacturing an electronic component according to claim 7, wherein the organic substance includes a metal alkoxide, and the metal alkoxide uses at least one of silicon, titanium, aluminum, zirconium, yttrium, and magnesium.
してシリコン系樹脂、エポキシ系樹脂、フッ素系樹脂、
アクリル系樹脂、ポリブタジエン系樹脂、フェノール系
樹脂のうちの少なくとも１種類を用いる請求項７に記載
の電子部品の製造方法。13. The organic material contains a resin, and as the resin material, a silicon resin, an epoxy resin, a fluorine resin,
The method of manufacturing an electronic component according to claim 7, wherein at least one kind of acrylic resin, polybutadiene resin, and phenol resin is used.
せた状態で４〜１００ｋｇ／ｃｍ2に加圧する請求項７
に記載の電子部品の製造方法。14. The pressure of 4 to 100 kg / cm 2 is applied with the surface of the electronic component element body being in contact with the impregnating liquid.
A method of manufacturing an electronic component as described in.
は、遠心分離、前記含浸液が可溶な液体による洗浄、前
記含浸液と反応しない粉末との接触のうち少なくとも一
つを用いて行う請求項７に記載の電子部品の製造方法。15. The removal of the impregnating liquid on the outer surface of the electronic component element body is performed by at least one of centrifugation, washing with a liquid in which the impregnating liquid is soluble, and contact with a powder that does not react with the impregnating liquid. The method of manufacturing an electronic component according to claim 7, which is performed as follows.
Ａｌ2Ｏ3，ＭｇＯのうち少なくとも１種類を含んでいる
請求項１５に記載の電子部品の製造方法。16. The powder is SiO 2 , SiC, ZrO 2 ,
The method of manufacturing an electronic component according to claim 15, comprising at least one of Al 2 O 3 and MgO.
その外表面に有する電子部品素体と液体とを入れた容器
を運動させて行う請求項７に記載の電子部品の製造方
法。17. The method of manufacturing an electronic component according to claim 7, wherein the polishing is performed by moving a container containing a liquid and an electronic component body having at least a cured organic substance on its outer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001387039A JP2003188040A (en) | 2001-12-20 | 2001-12-20 | Electronic component and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001387039A JP2003188040A (en) | 2001-12-20 | 2001-12-20 | Electronic component and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003188040A true JP2003188040A (en) | 2003-07-04 |
Family
ID=27595991
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001387039A Pending JP2003188040A (en) | 2001-12-20 | 2001-12-20 | Electronic component and manufacturing method thereof |
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| Country | Link |
|---|---|
| JP (1) | JP2003188040A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009267079A (en) * | 2008-04-25 | 2009-11-12 | Murata Mfg Co Ltd | Electronic component |
-
2001
- 2001-12-20 JP JP2001387039A patent/JP2003188040A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009267079A (en) * | 2008-04-25 | 2009-11-12 | Murata Mfg Co Ltd | Electronic component |
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