JP2003176399A - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor deviceInfo
- Publication number
- JP2003176399A JP2003176399A JP2001378116A JP2001378116A JP2003176399A JP 2003176399 A JP2003176399 A JP 2003176399A JP 2001378116 A JP2001378116 A JP 2001378116A JP 2001378116 A JP2001378116 A JP 2001378116A JP 2003176399 A JP2003176399 A JP 2003176399A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- general formula
- resin composition
- weight
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、成形性、耐半田信
頼性に優れた特性を有する半導体封止用エポキシ樹脂組
成物及び半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor encapsulating epoxy resin composition having excellent moldability and soldering reliability and a semiconductor device.
【０００２】[0002]
【従来の技術】ＩＣ、ＬＳＩ等の半導体素子の封止方法
として、エポキシ樹脂組成物のトランスファー成形によ
る方法が、低コスト、大量生産に適した方法として採用
され、信頼性の点でもエポキシ樹脂や硬化剤であるフェ
ノール樹脂の改良により、その向上が図られてきた。し
かし、近年電子機器の小型化、軽量化、高性能化の市場
動向において、半導体の多様化も年々進み、エポキシ樹
脂組成物への要求は益々厳しいものとなってきている。
このため、従来のエポキシ樹脂組成物では解決できない
問題点も出てきている。2. Description of the Related Art As a method for encapsulating semiconductor elements such as IC and LSI, a transfer molding method of an epoxy resin composition has been adopted as a method suitable for low cost and mass production. The improvement has been attempted by improving the phenol resin which is a curing agent. However, in recent years, due to market trends of miniaturization, weight reduction, and high performance of electronic devices, semiconductors have been diversified year by year, and demands for epoxy resin compositions have become increasingly severe.
For this reason, there are some problems that cannot be solved by conventional epoxy resin compositions.
【０００３】一つには、半導体装置の多様化に伴い、半
導体装置中に占めるエポキシ樹脂組成物の硬化物の厚み
が、それぞれの半導体装置において著しく異なってきて
いるということである。例えば１ｍｍ厚のＴＳＯＰ等の
場合、半導体素子の上面に形成されるエポキシ樹脂組成
物の硬化物の厚みは０．２〜０．３ｍｍ程度となる。一
方４ｍｍ厚のＳＯＪ等の厚型半導体装置の場合では、半
導体素子の上面に形成されるエポキシ樹脂組成物の硬化
物の厚みは１ｍｍ以上にもなる。そのため硬化物の厚み
により半導体装置内部及び外部にボイド、未充填が発生
したりして成形性に問題がある。一方エポキシ樹脂組成
物の硬化物とリードフレームや半導体素子との密着性等
の耐半田信頼性に対しての要求も、より高くなってい
る。このような要求に対して、ボイド等の低減には消泡
剤、密着性の向上には密着助剤の添加等の検討により改
良が図れてきたが、未だ完全な解決策とはならず、更な
る成形性と耐半田信頼性の改良が望まれている。One is that, as semiconductor devices are diversified, the thickness of the cured product of the epoxy resin composition in the semiconductor devices is remarkably different in each semiconductor device. For example, in the case of 1 mm thick TSOP or the like, the thickness of the cured product of the epoxy resin composition formed on the upper surface of the semiconductor element is about 0.2 to 0.3 mm. On the other hand, in the case of a thick semiconductor device such as a SOJ having a thickness of 4 mm, the cured product of the epoxy resin composition formed on the upper surface of the semiconductor element has a thickness of 1 mm or more. Therefore, there is a problem in moldability because voids and unfilling occur inside and outside the semiconductor device depending on the thickness of the cured product. On the other hand, demands for soldering reliability such as adhesion between a cured product of an epoxy resin composition and a lead frame or a semiconductor element are also higher. In order to meet such demands, improvements have been attempted by studying addition of a defoaming agent to reduce voids and the like, and an adhesion aid to improve adhesion, but this is not a complete solution yet. Further improvement in moldability and soldering reliability is desired.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、多種多様な
半導体装置の成形を目的とし、多種多様なリードフレー
ムを使用した場合における成形性、耐半田信頼性に優れ
た特性を有する半導体封止用エポキシ樹脂組成物及びこ
れを用いて半導体素子を封止してなる半導体装置を提供
するものである。SUMMARY OF THE INVENTION The present invention is intended for molding a wide variety of semiconductor devices, and has a semiconductor encapsulation having excellent moldability and soldering reliability when a wide variety of lead frames are used. The present invention provides an epoxy resin composition for use and a semiconductor device obtained by encapsulating a semiconductor element using the epoxy resin composition.
【０００５】[0005]
【課題を解決するための手段】本発明は、
［１］（Ａ）一般式（１）で示されるエポキシ樹脂と一
般式（２）で示されるエポキシ樹脂を全エポキシ樹脂中
７０重量％以上、（Ｂ）一般式（３）で示されるフェノ
ール樹脂と一般式（４）で示されるフェノール樹脂を全
フェノール樹脂中９０重量％以上、（Ｃ）硬化促進剤及
び（Ｄ）無機質充填材を全樹脂組成物中８０〜９０重量
％含み、かつ重量比［一般式（１）のエポキシ樹脂］／
［一般式（２）のエポキシ樹脂］＝３０／７０〜７０／
３０、［一般式（３）のフェノール樹脂］／［一般式
（４）のフェノール樹脂］＝１０／９０〜９０／１０で
あることを特徴とする半導体封止用エポキシ樹脂組成
物、According to the present invention, [1] (A) an epoxy resin represented by the general formula (1) and an epoxy resin represented by the general formula (2) are contained in an amount of 70% by weight or more based on all epoxy resins, (B) 90% by weight or more of the phenol resin represented by the general formula (3) and the phenol resin represented by the general formula (4) in the total phenol resin, and (C) the curing accelerator and (D) the inorganic filler as the whole resin. 80 to 90% by weight in the composition, and the weight ratio [epoxy resin of general formula (1)] /
[Epoxy resin of general formula (2)] = 30/70 to 70 /
30, [phenol resin of general formula (3)] / [phenol resin of general formula (4)] = 10/90 to 90/10, epoxy resin composition for semiconductor encapsulation,
【０００６】[0006]
【化５】
（ｎは平均値で、１〜６の正数、Ｒ1は炭素数１〜４の
アルキル基で同一でも異なっていてもよい、ｐは０、１
又は２）[Chemical 5] (N is an average value, a positive number of 1 to 6, R 1 is an alkyl group having 1 to 4 carbon atoms and may be the same or different, p is 0, 1
Or 2)
【０００７】[0007]
【化６】
（Ｒ2は水素原子又は炭素数１〜４のアルキル基で同一
でも異なっていてもよい）[Chemical 6] (R 2 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms and may be the same or different.)
【０００８】[0008]
【化７】
（ｎは平均値で、１〜６の正数、Ｒ3は炭素数１〜４の
アルキル基で同一でも異なっていてもよい、ｑは０、１
又は２）[Chemical 7] (N is an average value, a positive number of 1 to 6, R 3 is an alkyl group having 1 to 4 carbon atoms and may be the same or different, q is 0, 1
Or 2)
【０００９】[0009]
【化８】
（ｎは平均値で、１〜６の正数、Ｒ4は炭素数１〜４の
アルキル基で同一でも異なっていてもよい、ｒは０、１
又は２）[Chemical 8] (N is an average value, a positive number of 1 to 6, R 4 is an alkyl group having 1 to 4 carbon atoms and may be the same or different, r is 0, 1
Or 2)
【００１０】［２］第［１］項記載の半導体封止用エポ
キシ樹脂組成物を用いて半導体素子を封止してなること
を特徴とする半導体装置、である。[2] A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation according to the item [1].
【００１１】[0011]
【発明の実施の形態】本発明に用いる一般式（１）で示
されるエポキシ樹脂は、低吸湿性と高密着性、一般式
（２）で示されるエポキシ樹脂は、流動性と硬化性に優
れる特徴を有しているが、反面一般式（１）で示される
エポキシ樹脂は硬化性が劣り、一般式（２）で示される
エポキシ樹脂は、主に厚型半導体装置において低溶融粘
度に由来してボイドが発生するおそれがある。一般式
（１）と一般式（２）のエポキシ樹脂を併用することに
より、これらの欠点が解消される。重量比で［一般式
（１）のエポキシ樹脂］／［一般式（２）のエポキシ樹
脂］＝３０／７０〜７０／３０とすることにより流動
性、高密着性のバランスのとれたエポキシ樹脂となり、
ボイド、未充填がなく成形性に優れ、耐半田信頼性に優
れた半導体装置が得られる。重量比で［一般式（１）の
エポキシ樹脂］／［一般式（２）のエポキシ樹脂］＝３
０／７０未満だと主に厚型半導体装置において低溶融粘
度に由来するボイドの増加や密着性不足となり、７０／
３０を越えると流動性や硬化性に劣る。又一般式（１）
で示されるエポキシ樹脂と一般式（２）で示されるエポ
キシ樹脂は、全エポキシ樹脂中７０重量％以上含むこと
が必要であり、７０重量％未満では、これらのエポキシ
樹脂の特徴が発現されない。BEST MODE FOR CARRYING OUT THE INVENTION The epoxy resin represented by the general formula (1) used in the present invention has low hygroscopicity and high adhesion, and the epoxy resin represented by the general formula (2) has excellent fluidity and curability. However, the epoxy resin represented by the general formula (1) is inferior in curability, and the epoxy resin represented by the general formula (2) is mainly derived from a low melt viscosity in a thick semiconductor device. Voids may occur. By using the epoxy resins of the general formula (1) and the general formula (2) in combination, these drawbacks are eliminated. A weight ratio of [epoxy resin of general formula (1)] / [epoxy resin of general formula (2)] = 30/70 to 70/30 results in an epoxy resin with well-balanced fluidity and high adhesion. ,
It is possible to obtain a semiconductor device which is free from voids and unfilled, has excellent moldability, and has excellent soldering reliability. [Epoxy resin of general formula (1)] / [epoxy resin of general formula (2)] = 3 in weight ratio
When it is less than 0/70, the voids increase and the adhesiveness is insufficient mainly due to the low melt viscosity in the thick semiconductor device, and 70 /
When it exceeds 30, the fluidity and the curability are poor. Also, the general formula (1)
The epoxy resin represented by and the epoxy resin represented by the general formula (2) must be contained in an amount of 70% by weight or more based on the total amount of the epoxy resin, and if the amount is less than 70% by weight, the characteristics of these epoxy resins are not exhibited.
【００１２】併用する場合のエポキシ樹脂としては、１
分子内にエポキシ基を２個以上有するモノマー、オリゴ
マー及びポリマー全般を指し、例えばビスフェノール型
エポキシ樹脂、スチルベン型エポキシ樹脂、フェノール
ノボラック型エポキシ樹脂、クレゾールノボラック型エ
ポキシ樹脂、環状脂肪族エポキシ樹脂、グリシジルエス
テル系エポキシ樹脂、グリシジルアミン系エポキシ樹
脂、複素環式エポキシ樹脂、トリフェノールメタン型エ
ポキシ樹脂、臭素化エポキシ樹脂等が挙げられるが、特
にこれらに限定されるものではない。これらは単独でも
混合して用いても良い。When used in combination, the epoxy resin is 1
A general term for monomers, oligomers and polymers having two or more epoxy groups in the molecule, for example, bisphenol type epoxy resin, stilbene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, cycloaliphatic epoxy resin, glycidyl ester. Examples thereof include epoxy resins, glycidyl amine epoxy resins, heterocyclic epoxy resins, triphenol methane type epoxy resins, brominated epoxy resins, etc., but are not particularly limited thereto. These may be used alone or in combination.
【００１３】本発明に用いる一般式（３）で示されるフ
ェノール樹脂は硬化性に優れ、一般式（４）で示される
フェノール樹脂は低吸湿性、低弾性に優れる特徴を有し
ているが、反面一般式（３）で示されるエポキシ樹脂は
弾性率が高く、一般式（４）で示されるエポキシ樹脂は
硬化性に劣るといった欠点がある。弾性率が低いと、特
に耐半田信頼性の向上に有効である。一般式（３）と一
般式（４）のエポキシ樹脂を併用することにより、これ
らの欠点が解消される。重量比で［一般式（３）のフェ
ノール樹脂］／［一般式（４）のフェノール樹脂］＝１
０／９０〜９０／１０とすることにより硬化性、低吸水
性、低弾性のバランスのとれたフェノール樹脂となり、
耐半田信頼性に優れた半導体装置が得られる。重量比で
［一般式（３）のフェノール樹脂］／［一般式（４）の
フェノール樹脂］＝１０／９０未満だと硬化性に劣り、
９０／１０を越えると吸水率や弾性率が高くなり、耐半
田信頼性に劣る。又一般式（３）で示されるフェノール
樹脂と一般式（４）で示されるフェノール樹脂は、全フ
ェノール樹脂中９０重量％以上含むことが必要であり９
０重量％未満だと、これらのフェノール樹脂の特徴が発
現されない。The phenol resin represented by the general formula (3) used in the present invention has excellent curability, and the phenol resin represented by the general formula (4) has low hygroscopicity and low elasticity. On the other hand, the epoxy resin represented by the general formula (3) has a high elastic modulus, and the epoxy resin represented by the general formula (4) is inferior in curability. When the elastic modulus is low, it is particularly effective for improving soldering reliability. By using the epoxy resins of the general formula (3) and the general formula (4) in combination, these drawbacks are eliminated. [Phenolic resin of general formula (3)] / [phenolic resin of general formula (4)] = 1 by weight
By setting it to 0/90 to 90/10, it becomes a phenol resin having a well-balanced curability, low water absorption, and low elasticity.
A semiconductor device having excellent soldering reliability can be obtained. If the weight ratio of [phenol resin of general formula (3)] / [phenol resin of general formula (4)] is less than 10/90, the curability is poor,
If it exceeds 90/10, the water absorption rate and the elastic modulus are increased, and the soldering reliability is deteriorated. Further, it is necessary that the phenol resin represented by the general formula (3) and the phenol resin represented by the general formula (4) are contained in an amount of 90% by weight or more in the total phenol resin.
If it is less than 0% by weight, the characteristics of these phenolic resins will not be exhibited.
【００１４】併用する場合のフェノール樹脂としては、
１分子内にフェノール性水酸基を２個以上有するモノマ
ー、オリゴマー及びポリマー全般を指し、例えばナフト
ールアラルキル樹脂、テルペン変性フェノール樹脂、ジ
シクロペンタジエン変性フェノール樹脂等が挙げられる
が、特にこれらに限定されるものではない。これらは単
独でも混合して用いても良い。全エポキシ樹脂のエポキ
シ基数（ａ）と全フェノール樹脂のフェノール性水酸基
数（ｂ）との比（ａ）／（ｂ）は、１．０〜１．２が好
ましい。１．０未満だと、エポキシ樹脂組成物の硬化物
と半導体素子界面の剥離が生じるおそれがあり、１．２
を越えると金型との離型性が悪くなり、ひいては成形性
に問題が生じるので好ましくない。As the phenol resin used in combination,
Refers to all monomers, oligomers and polymers having two or more phenolic hydroxyl groups in one molecule, such as naphthol aralkyl resin, terpene modified phenol resin, dicyclopentadiene modified phenol resin, etc., but is not limited to these. is not. These may be used alone or in combination. The ratio (a) / (b) of the number (a) of epoxy groups of all epoxy resins and the number (b) of phenolic hydroxyl groups of all phenol resins is preferably 1.0 to 1.2. If it is less than 1.0, peeling between the cured product of the epoxy resin composition and the semiconductor element interface may occur.
If it exceeds the range, the mold releasability from the mold is deteriorated, which causes a problem in moldability, which is not preferable.
【００１５】本発明に用いる硬化促進剤としては、例え
ばトリブチルアミン等のアミン系化合物、トリフェニル
ホスフィン、テトラフェニルホスフォニウム・テトラフ
ェニルボレート塩等の有機リン系化合物、２−メチルイ
ミダゾール等のイミダゾール化合物、１，８−ジアザビ
シクロ（５，４，０）ウンデセン−７等が挙げられる
が、これらに限定されるものではない。これらは単独で
も混合して用いてもよい。Examples of the curing accelerator used in the present invention include amine compounds such as tributylamine, organic phosphorus compounds such as triphenylphosphine, tetraphenylphosphonium / tetraphenylborate salt, and imidazoles such as 2-methylimidazole. Examples of the compound include 1,8-diazabicyclo (5,4,0) undecene-7, but are not limited thereto. These may be used alone or in combination.
【００１６】本発明に用いる無機質充填材は、一般に封
止材料に使用されるもので良く、特に限定するものでは
ない。このような無機質充填材としては、例えば溶融シ
リカ、球状シリカ、結晶シリカ、２次凝集シリカ、アル
ミナ等が挙げられる。流動性の向上という点から、特に
溶融球状シリカが好ましい。溶融球状シリカの粒子の形
状としては、流動性の向上のために限りなく真球状であ
り、かつ粒度分布がブロードであることが望ましい。無
機質充填材の含有量は、全エポキシ樹脂組成物中８０〜
９０重量％である。８０重量％未満だと無機質充填材に
よる補強効果が発現されず、９０重量％を越えるとエポ
キシ樹脂組成物の流動性が低下し、成形時に充填不良等
が生じる。The inorganic filler used in the present invention may be one generally used as a sealing material and is not particularly limited. Examples of such an inorganic filler include fused silica, spherical silica, crystalline silica, secondary agglomerated silica, alumina and the like. From the viewpoint of improving fluidity, fused spherical silica is particularly preferable. It is desirable that the shape of the fused spherical silica particles is truly spherical and has a broad particle size distribution in order to improve fluidity. The content of the inorganic filler is 80 to 80 in the total epoxy resin composition.
90% by weight. If it is less than 80% by weight, the reinforcing effect by the inorganic filler will not be exhibited, and if it exceeds 90% by weight, the fluidity of the epoxy resin composition will be deteriorated, resulting in defective filling during molding.
【００１７】本発明のエポキシ樹脂組成物は、（Ａ）〜
（Ｄ）成分の他、必要に応じて、カーボンブラック等の
着色剤、酸化アンチモン、リン化合物等の難燃剤、シリ
コーンオイル、シリコーンゴム等の低応力成分、天然ワ
ックス、合成ワックス、高級脂肪酸及びその金属塩類も
しくはパラフィン等の離型剤、酸化防止剤等の各種添加
剤を配合することができる。本発明のエポキシ樹脂組成
物は、（Ａ）〜（Ｄ）成分、及びその他の添加剤等をミ
キサーで常温混合し、ロール、ニーダー、押出機等の混
練機で溶融混練して、冷却後粉砕して得られる。本発明
のエポキシ樹脂組成物を用いて、半導体素子等の電子部
品を封止し、半導体装置を製造するには、トランスファ
ーモールド、コンプレッションモールド、インジェクシ
ョンモールド等の成形方法で硬化成形すればよい。The epoxy resin composition of the present invention comprises (A)-
In addition to the component (D), if necessary, a coloring agent such as carbon black, a flame retardant such as antimony oxide and a phosphorus compound, a low stress component such as silicone oil and silicone rubber, a natural wax, a synthetic wax, a higher fatty acid and the like. Various additives such as a metal salt or a releasing agent such as paraffin, and an antioxidant can be blended. The epoxy resin composition of the present invention is obtained by mixing components (A) to (D), other additives, and the like at room temperature with a mixer, melt-kneading with a kneader such as a roll, kneader, or extruder, and crushing after cooling. Obtained. In order to manufacture a semiconductor device by sealing an electronic component such as a semiconductor element using the epoxy resin composition of the present invention, it may be cured and molded by a molding method such as a transfer mold, a compression mold, an injection mold.
【００１８】[0018]
【実施例】以下に、実施例を挙げて説明するが、本発明
はこれらの実施例によりなんら限定されるものではな
い。配合割合は重量部とする。
実施例１
式（５）のエポキシ樹脂（大日本インキ化学工業（株）・製ＨＰ−７２００、
軟化点６５℃、エポキシ当量２６５ｇ／ｅｑ） ４．０重量部EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. The mixing ratio is parts by weight. Example 1 4.0 parts by weight of an epoxy resin of formula (5) (HP-7200 manufactured by Dainippon Ink and Chemicals, Inc., softening point 65 ° C., epoxy equivalent 265 g / eq).
【００１９】[0019]
【化９】 [Chemical 9]
【００２０】 式（６）の構造を主成分とするエポキシ樹脂（ジャパンエポキシレジン（株） ・製ＹＸ−４０００、融点１０５℃、エポキシ当量１９５ｇ／ｅｑ） ３．７重量部[0020] Epoxy resin mainly composed of the structure of formula (6) (Japan Epoxy Resin Co., Ltd.) ・ YX-4000, melting point 105 ° C., epoxy equivalent 195 g / eq) 3.7 parts by weight
【００２１】[0021]
【化１０】 [Chemical 10]
【００２２】 式（７）のフェノール樹脂（軟化点８０℃、水酸基当量１０５ｇ／ｅｑ） ４．０重量部[0022] Phenolic resin of formula (7) (softening point 80 ° C., hydroxyl group equivalent 105 g / eq) 4.0 parts by weight
【００２３】[0023]
【化１１】 [Chemical 11]
【００２４】 式（８）のフェノール樹脂（軟化点７５℃、水酸基当量１７５ｇ／ｅｑ） １．０重量部[0024] Phenol resin of formula (8) (softening point 75 ° C., hydroxyl group equivalent 175 g / eq) 1.0 part by weight
【００２５】[0025]
【化１２】 [Chemical 12]
【００２６】
球状溶融シリカ ８４．４重量部
トリフェニルホスフィン ０．２重量部
カーボンブラック ０．３重量部
カルナバワックス ０．４重量部
三酸化アンチモン １．２重量部
臭素化エポキシ樹脂（エポキシ当量３６０ｇ／ｅｑ） ０．８重量部
をミキサーで混合し、７０〜１００℃で混練して、冷却
後粉砕してエポキシ樹脂組成物を得た。得られたエポキ
シ樹脂組成物を以下の方法で評価した。結果を表１に示
す。Spherical fused silica 84.4 parts by weight Triphenylphosphine 0.2 parts by weight Carbon black 0.3 parts by weight Carnauba wax 0.4 parts by weight Antimony trioxide 1.2 parts by weight Brominated epoxy resin (epoxy equivalent: 360 g / eq) 0.8 part by weight was mixed with a mixer, kneaded at 70 to 100 ° C., cooled and pulverized to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following methods. The results are shown in Table 1.
【００２７】評価方法
スパイラルフロー：ＥＭＭＩ−１−６６に準じたスパイ
ラルフロー測定用の金型を用い、金型温度１７５℃、注
入圧力６．９ＭＰａ、硬化時間２分で測定した。スパイ
ラルフローは流動性のパラメータであり、数値が大きい
方が流動性が良好である。単位はｃｍ。
硬化トルク：キュラストメーター（オリエンテック
（株）製、ＪＳＲキュラストメーターIVＰＳ型）を用
い、１７５℃、４５秒後のトルクを測定した。この値の
大きい方が硬化性は良好である。単位はｋｇｆ・ｃｍ
成形性（ボイド性、充填性）：１００ピンＴＱＦＰ
［パッケージサイズは１４×１４ｍｍ、厚み１．４ｍｍ
（半導体素子の上面に形成されるエポキシ樹脂組成物の
硬化物の厚みは０．４ｍｍ）、シリコンチップサイズは
８．０×８．０ｍｍ、リードフレームはＣｕ製］を金型
温度１７５℃、注入圧力７．４ＭＰａ、硬化時間１分に
て５０ショット連続でトランスファー成形し、成形した
パッケージの外観を観察し、外部ボイドとパッケージ未
充填が発生した割合を求め、それぞれ％で表示した。
成形性（ボイド性、充填性）：２６ピンＳＯＪ［パッ
ケージサイズは８．９×１７．１ｍｍ、厚み２．７ｍｍ
（半導体素子の上面に形成されるエポキシ樹脂組成物の
硬化物の厚みは１．２ｍｍ）、シリコンチップサイズは
６．０×１５．０ｍｍ、リードフレームはＣｕ製］を金
型温度１７５℃、注入圧力７．４ＭＰａ、硬化時間１分
にて５０ショット連続でトランスファー成形し、成形し
たパッケージの外観を観察し、外部ボイドとパッケージ
未充填が発生した割合を求め、それぞれ％で表示した。
耐半田性：トランスファー成形機を用いて、金型温度１
７５℃、注入圧力８．３ＭＰａ、硬化時間２分で、９×
９ｍｍの半導体素子を９．５×９．９ｍｍのアイランド
を有する８０ｐＱＦＰのリードフレームに封止し、１７
５℃、８時間で後硬化を行った。２０個のパッケージを
６０℃、相対湿度６０％の環境下で１２０時間処理し、
その後２６０℃の半田槽に１０秒間浸漬した。顕微鏡で
観察し、クラック発生率［（外部クラック発生パッケー
ジ数）／（全パッケージ数）×１００］を％で表示し
た。又半導体素子とエポキシ樹脂組成物の硬化物との剥
離面積の割合を超音波探査映像装置にて測定し、剥離率
［（剥離面積）／（チップ面積）×１００］を％で表示
した。Evaluation method Spiral flow: Using a mold for spiral flow measurement conforming to EMMI-1-66, the mold temperature was 175 ° C., the injection pressure was 6.9 MPa, and the curing time was 2 minutes. The spiral flow is a fluidity parameter, and the larger the value, the better the fluidity. The unit is cm. Curing torque: A torque after 45 seconds at 175 ° C. was measured using a curast meter (manufactured by Orientec Co., Ltd., JSR curast meter IVPS type). The larger this value, the better the curability. Unit is kgf · cm Moldability (void property, filling property): 100-pin TQFP
[Package size 14 × 14mm, thickness 1.4mm
(The thickness of the cured product of the epoxy resin composition formed on the upper surface of the semiconductor element is 0.4 mm), the silicon chip size is 8.0 × 8.0 mm, the lead frame is made of Cu], and the mold temperature is 175 ° C. Transfer molding was performed continuously for 50 shots at a pressure of 7.4 MPa and a curing time of 1 minute, and the appearance of the molded package was observed, and the ratio of occurrence of external voids and package unfilling was determined and expressed in%. Formability (void property, filling property): 26-pin SOJ [Package size is 8.9 x 17.1 mm, thickness is 2.7 mm
(The thickness of the cured product of the epoxy resin composition formed on the upper surface of the semiconductor element is 1.2 mm), the silicon chip size is 6.0 × 15.0 mm, the lead frame is made of Cu], and the mold temperature is 175 ° C. Transfer molding was performed continuously for 50 shots at a pressure of 7.4 MPa and a curing time of 1 minute, and the appearance of the molded package was observed, and the ratio of occurrence of external voids and package unfilling was determined and expressed in%. Solder resistance: Mold temperature 1 using transfer molding machine
At 75 ° C., injection pressure 8.3 MPa, curing time 2 minutes, 9 ×
A 9 mm semiconductor element is encapsulated in an 80 pQFP lead frame having 9.5 × 9.9 mm islands, and 17
Post-curing was performed at 5 ° C. for 8 hours. Twenty packages are processed at 60 ° C and 60% relative humidity for 120 hours,
Then, it was immersed in a solder bath at 260 ° C. for 10 seconds. It was observed with a microscope and the crack occurrence rate [(number of external cracked packages) / (total number of packages) × 100] was expressed in%. Further, the ratio of the peeling area between the semiconductor element and the cured product of the epoxy resin composition was measured by an ultrasonic probe imager, and the peeling rate [(peeling area) / (chip area) × 100] was expressed in%.
【００２８】実施例２〜５、比較例１〜６
表１、表２の配合に従い、実施例１と同様にしてエポキ
シ樹脂組成物を得、実施例１と同様にして評価した。結
果を表１、表２に示す。なお、実施例４、５、比較例４
では、オルソクレゾールノボラック型エポキシ樹脂（軟
化点５５℃、エポキシ当量１９６ｇ／ｅｑ）を、比較例
６では、式（９）のフェノール樹脂（軟化点１１０℃、
水酸基当量９７ｇ／ｅｑ）を使用した。Examples 2 to 5 and Comparative Examples 1 to 6 According to the formulations shown in Tables 1 and 2, epoxy resin compositions were obtained in the same manner as in Example 1 and evaluated in the same manner as in Example 1. The results are shown in Tables 1 and 2. In addition, Examples 4 and 5 and Comparative Example 4
Is an orthocresol novolac type epoxy resin (softening point 55 ° C., epoxy equivalent 196 g / eq), and in Comparative Example 6, a phenol resin of formula (9) (softening point 110 ° C.,
Hydroxyl equivalent of 97 g / eq) was used.
【００２９】[0029]
【化１３】 [Chemical 13]
【００３０】[0030]
【表１】 [Table 1]
【００３１】[0031]
【表２】 [Table 2]
【００３２】[0032]
【発明の効果】本発明のエポキシ樹脂組成物は、成形性
に優れた特性を有しており、多種多様なリードフレーム
に搭載された半導体素子を封止して得られた半導体装置
は耐半田信頼性に優れている。The epoxy resin composition of the present invention has excellent moldability, and a semiconductor device obtained by encapsulating semiconductor elements mounted on a wide variety of lead frames is solder resistant. It has excellent reliability.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 23/31 Ｆターム(参考） 4J002 CC043 CD041 CD052 CE003 DE147 DJ017 EN046 EU116 EU136 EW016 FD017 FD156 GQ05 4J036 AA02 AA05 AC08 AD01 AD07 AJ07 DC06 DC41 DC46 DD07 FA03 FA05 FB07 FB08 HA12 4M109 AA01 CA21 EA02 EB03 EC05─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 23/31 F term (reference) 4J002 CC043 CD041 CD052 CE003 DE147 DJ017 EN046 EU116 EU136 EW016 FD017 FD156 GQ05 4J036 AA02 AA05 AC08 AD01 AD07 AJ07 DC06 DC41 DC46 DD07 FA03 FA05 FB07 FB08 HA12 4M109 AA01 CA21 EA02 EB03 EC05
Claims (2)
樹脂と一般式（２）で示されるエポキシ樹脂を全エポキ
シ樹脂中７０重量％以上、（Ｂ）一般式（３）で示され
るフェノール樹脂と一般式（４）で示されるフェノール
樹脂を全フェノール樹脂中９０重量％以上、（Ｃ）硬化
促進剤及び（Ｄ）無機質充填材を全エポキシ樹脂組成物
中８０〜９０重量％含み、かつ重量比［一般式（１）の
エポキシ樹脂］／［一般式（２）のエポキシ樹脂］＝３
０／７０〜７０／３０、［一般式（３）のフェノール樹
脂］／［一般式（４）のフェノール樹脂］＝１０／９０
〜９０／１０であることを特徴とする半導体封止用エポ
キシ樹脂組成物。 【化１】 （ｎは平均値で、１〜６の正数、Ｒ1は炭素数１〜４の
アルキル基で同一でも異なっていてもよい、ｐは０、１
又は２） 【化２】 （Ｒ2は水素原子又は炭素数１〜４のアルキル基で同一
でも異なっていてもよい） 【化３】 （ｎは平均値で、１〜６の正数、Ｒ3は炭素数１〜４の
アルキル基で同一でも異なっていてもよい、ｑは０、１
又は２） 【化４】 （ｎは平均値で、１〜６の正数、Ｒ4は炭素数１〜４の
アルキル基で同一でも異なっていてもよい、ｒは０、１
又は２）1. An epoxy resin represented by the general formula (1) (A) and an epoxy resin represented by the general formula (2) in an amount of 70% by weight or more based on the total epoxy resin, and (B) represented by the general formula (3). 90% by weight or more of the phenol resin and the phenol resin represented by the general formula (4) in the total phenol resin, and 80 to 90% by weight of the (C) curing accelerator and the (D) inorganic filler in the total epoxy resin composition, And weight ratio [epoxy resin of general formula (1)] / [epoxy resin of general formula (2)] = 3
0/70 to 70/30, [phenol resin of general formula (3)] / [phenol resin of general formula (4)] = 10/90
90 to 90/10. An epoxy resin composition for semiconductor encapsulation. [Chemical 1] (N is an average value, a positive number of 1 to 6, R 1 is an alkyl group having 1 to 4 carbon atoms and may be the same or different, p is 0, 1
Or 2) (R 2 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms and may be the same or different.) (N is an average value, a positive number of 1 to 6, R 3 is an alkyl group having 1 to 4 carbon atoms and may be the same or different, q is 0, 1
Or 2) (N is an average value, a positive number of 1 to 6, R 4 is an alkyl group having 1 to 4 carbon atoms and may be the same or different, r is 0, 1
Or 2)
脂組成物を用いて半導体素子を封止してなることを特徴
とする半導体装置。2. A semiconductor device obtained by encapsulating a semiconductor element using the epoxy resin composition for encapsulating a semiconductor according to claim 1.
Priority Applications (1)
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|---|---|---|---|
| JP2001378116A JP2003176399A (en) | 2001-12-12 | 2001-12-12 | Epoxy resin composition and semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001378116A JP2003176399A (en) | 2001-12-12 | 2001-12-12 | Epoxy resin composition and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003176399A true JP2003176399A (en) | 2003-06-24 |
Family
ID=19185929
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|---|---|---|---|
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| Country | Link |
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| JP (1) | JP2003176399A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006104334A (en) * | 2004-10-05 | 2006-04-20 | Hitachi Chem Co Ltd | Sealing epoxy resin molding material and electronic part device |
| KR20160088292A (en) * | 2013-11-18 | 2016-07-25 | 도레이 카부시키가이샤 | Thermoplastic polyester resin composition and molded article |
-
2001
- 2001-12-12 JP JP2001378116A patent/JP2003176399A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006104334A (en) * | 2004-10-05 | 2006-04-20 | Hitachi Chem Co Ltd | Sealing epoxy resin molding material and electronic part device |
| KR20160088292A (en) * | 2013-11-18 | 2016-07-25 | 도레이 카부시키가이샤 | Thermoplastic polyester resin composition and molded article |
| US20160289445A1 (en) * | 2013-11-18 | 2016-10-06 | Toray Industries, Inc. | Thermoplastic polyester resin composition and molded article |
| KR102157130B1 (en) * | 2013-11-18 | 2020-09-17 | 도레이 카부시키가이샤 | Thermoplastic polyester resin composition and molded article |
| US11319436B2 (en) * | 2013-11-18 | 2022-05-03 | Toray Industries, Inc. | Thermoplastic polyester resin composition and molded article |
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