JP2003147521A - Apparatus and method for thin film deposition - Google Patents
Apparatus and method for thin film depositionInfo
- Publication number
- JP2003147521A JP2003147521A JP2001337987A JP2001337987A JP2003147521A JP 2003147521 A JP2003147521 A JP 2003147521A JP 2001337987 A JP2001337987 A JP 2001337987A JP 2001337987 A JP2001337987 A JP 2001337987A JP 2003147521 A JP2003147521 A JP 2003147521A
- Authority
- JP
- Japan
- Prior art keywords
- film
- film thickness
- thin film
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Optical Filters (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板上に薄膜を成
膜する装置及びこの装置を用いて薄膜を成膜する方法に
関する。例えば、ガラス基板上にスパッタ装置などで成
膜を行うと、基板上の所望位置にスパッタ粒子が堆積し
て薄膜が形成される際に、成膜条件を均一にする目的で
基板を回転させるなどしても、回転基板の径方向におい
て、ターゲット中心に対応する基板部分をピークにする
ような膜厚分布を有する薄膜が形成されることが多い。
また、回転基板の円周方向においても回転する基板のど
の部分から成膜を開始し終了したかによって、これらの
部分を始端または終端とするような膜厚分布が生じるこ
とが多い。このような膜厚の散布度は、所望の膜厚値の
数パーセント程度であることが多いが、光素子や光フィ
ルタ等に用いられる光学薄膜分野においては、膜厚に起
因して変化する光学膜厚（膜厚と屈折率との積）を制御
するため、厳密に均等な膜厚の薄膜を成膜することが求
められている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming a thin film on a substrate and a method for forming a thin film using this apparatus. For example, when a film is formed on a glass substrate by a sputtering device or the like, when the sputtered particles are deposited at a desired position on the substrate and a thin film is formed, the substrate is rotated for the purpose of uniform film forming conditions. However, in many cases, a thin film having a film thickness distribution that peaks in the substrate portion corresponding to the center of the target is formed in the radial direction of the rotating substrate.
Also, in the circumferential direction of the rotating substrate, depending on which part of the rotating substrate the film formation is started and ended, there is often a film thickness distribution with these parts as the start end or the end. The degree of dispersion of such a film thickness is often about several percent of the desired film thickness value, but in the field of optical thin films used for optical elements, optical filters, etc. In order to control the film thickness (product of film thickness and refractive index), it is required to form a thin film having a strictly uniform film thickness.
【０００２】[0002]
【従来の技術】従来、成膜条件の均一化を図るために基
板を回転させ、この基板上に薄膜の成膜を行うスパッタ
装置は図１に示す構成を有する。このものでは、装置チ
ャンバ１内の上方に、回転軸２で軸支されて回転可能な
基板ホルダ３を設け、該ホルダ３上にガラス基板４を取
り付けている。また、装置チャンバ１の断面下方の一方
の側面領域に、基板４方向に向けたＴｉターゲット５を
載置したスパッタカソード６を成膜源として設置し、Ｔ
ｉターゲット５とスパッタカソード６とで構成されるス
パッタリングターゲットの外側に防着板７を覆設してい
る。さらに、装置チャンバ１内の下方に、円形状の開口
部８ａを有するシャッタ８を、回転軸９で軸支して該回
転軸９まわりに回転可能にして設けている。（図２参
照。）ここで、図１のスパッタ装置において、基板ホル
ダ３の回転軸２とシャッタ８の回転軸９とはそれぞれ独
立の回転速度で回転できるようにしている。また、基板
ホルダ３と基板４とには、基板４上に成膜された薄膜の
膜厚を計測する膜厚モニタ１０が設けられている。膜厚
モニタ１０は、発光部１０ａ1〜１０ａ3と、発光部１０
ａ1〜１０ａ3にそれぞれ対応する受光部１０ｂ1〜１０
ｂ3とから成り、発光部１０ａと受光部１０ｂとの組み
合わせにより、第１モニタ１０ａ1-１０ｂ 1、第２モニ
タ１０ａ2-１０ｂ2及び第３モニタ１０ａ3-１０ｂ3を構
成している。このように、発光部１０ａ1〜１０ａ3と受
光部１０ｂ1〜１０ｂ3とから成る光センサで複数のモニ
タ（第１乃至第３モニタ）を構成することにより、膜厚
モニタ１０は、ガラス基板４と薄膜との光透過度を測定
して、薄膜の膜厚の均等性をモニタできる。また、装置
チャンバ１は、排気ポンプ１１により真空排気できるよ
うに構成され、さらに、装置チャンバ１断面下方のスパ
ッタリングターゲット側の領域にガス導入口１２ａを設
け、該ガス導入口１２ａからスパッタガスを導入し、装
置チャンバ１断面上方の基板ホルダ３の近傍領域にガス
導入口１２ｂを設け、該ガス導入口１２ｂから反応性ガ
スを導入するようにしている。2. Description of the Related Art Conventionally, in order to make the film forming conditions uniform,
Sputtering that rotates a plate and forms a thin film on this substrate
The device has the configuration shown in FIG. This is the device
It is rotatable above the inside of the chamber 1 by being supported by the rotary shaft 2.
The substrate holder 3 is provided, and the glass substrate 4 is mounted on the holder 3.
Attached. In addition, one of the lower part of the cross section of the apparatus chamber 1
Ti target 5 directed to the substrate 4 in the side surface region of
The sputter cathode 6 placed is set as a film forming source, and T
i target 5 and sputter cathode 6
The deposition preventive plate 7 is provided on the outside of the putting target.
It Furthermore, a circular opening is formed in the lower part of the apparatus chamber 1.
A shutter 8 having a portion 8a is pivotally supported by a rotary shaft 9 to rotate the shutter 8a.
It is provided so as to be rotatable around the rolling shaft 9. (See Figure 2
Teru. ) Here, in the sputtering apparatus of FIG.
The rotary shaft 2 of the da 3 and the rotary shaft 9 of the shutter 8 are independent of each other.
It is designed to rotate at a vertical rotation speed. Also the substrate
The holder 3 and the substrate 4 are formed of a thin film formed on the substrate 4.
A film thickness monitor 10 for measuring the film thickness is provided. Film thickness
The monitor 10 has a light emitting unit 10a.1-10a3And the light emitting unit 10
a1-10a310b corresponding to each1-10
b3And a combination of a light emitting portion 10a and a light receiving portion 10b.
Depending on the combination, the first monitor 10a1-10b 1, The second moni
10a2-10b2And the third monitor 10a3-10b3Construct
Is made. Thus, the light emitting unit 10a1-10a3And receiving
Light section 10b1-10b3An optical sensor consisting of
Film thickness by configuring the monitor (first to third monitors)
The monitor 10 measures the light transmittance between the glass substrate 4 and the thin film.
Then, the uniformity of the film thickness of the thin film can be monitored. Also the device
The chamber 1 can be evacuated by the exhaust pump 11.
And a spa below the cross section of the apparatus chamber 1.
A gas inlet 12a is provided in the area of the tattering target side.
First, sputter gas is introduced through the gas inlet 12a,
A gas is provided in an area near the substrate holder 3 above the cross section of the placing chamber 1.
An inlet 12b is provided, and the reactive gas is introduced from the gas inlet 12b.
I'm trying to introduce
【０００３】ガラス基板４上に成膜を行うに際しては、
まず、前処理として排気ポンプ１１によりチャンバ１内
を真空排気した後、ガス導入口１２ａからスパッタガス
としてＡｒガスを導入し、シャッタ８を回転軸９まわり
に回転させて開口部８ａがターゲット５上に位置しない
ように調整する。この状態で、スパッタカソード６に電
力を印加して行うプレスパッタにより、ターゲット５表
面をクリーニングする。その後、ガス導入口１２ａから
スパッタガスとしてＡｒガスを導入すると共に、ガス導
入口１２ｂから反応性ガスとして酸素ガスを導入し、さ
らに、シャッタ８を回転軸９まわりに回転させて開口部
８ａがターゲット５上に位置するように調整し、スパッ
タカソード６に電力を印加してスパッタカソード６上の
Ｔｉターゲット５をスパッタさせ、これにより、ＴｉＯ
2から成る酸化膜を基板４上に成膜する。このとき、基
板ホルダ３は回転軸２まわりに回転しており、これに伴
って基板４も回転されている。そして、基板４上に成膜
される薄膜の膜厚を膜厚モニタ１０により計測しなが
ら、基板４上のＴｉＯ2の成膜を所定時間継続し、薄膜
が所定膜厚に成膜できた時点で、再び、シャッタ８を回
転させて開口部８ａがターゲット５上に位置しないよう
に調整し、この状態で成膜を終了させる。When forming a film on the glass substrate 4,
First, as a pretreatment, the inside of the chamber 1 is evacuated by the exhaust pump 11, and then Ar gas is introduced as a sputter gas from the gas inlet 12a, and the shutter 8 is rotated around the rotating shaft 9 so that the opening 8a is above the target 5. Adjust so that it is not located at. In this state, the surface of the target 5 is cleaned by pre-sputtering by applying electric power to the sputter cathode 6. After that, Ar gas is introduced as a sputtering gas from the gas inlet 12a, oxygen gas is introduced as a reactive gas from the gas inlet 12b, and the shutter 8 is rotated around the rotation axis 9 so that the opening 8a is the target. 5 so that the Ti target 5 on the sputter cathode 6 is sputtered by applying electric power to the sputter cathode 6.
An oxide film of 2 is formed on the substrate 4. At this time, the substrate holder 3 is rotating around the rotating shaft 2, and the substrate 4 is also rotating accordingly. When the film thickness of the thin film formed on the substrate 4 is measured by the film thickness monitor 10, the film formation of TiO 2 on the substrate 4 is continued for a predetermined time, and when the thin film can be formed to the predetermined film thickness. Then, the shutter 8 is rotated again so that the opening 8a is not positioned on the target 5, and the film formation is completed in this state.
【０００４】上記の従来の装置において、シャッタ８
は、成膜の開始と終了とを切り替える手段として、ある
いはプレスパッタ時に、ターゲット物質の基板４への飛
来を妨げるものとして用いられているが、シャッタ８の
開口部８ａの形状により基板４上の薄膜の膜厚分布を補
正する機能も備えている。このように膜厚補正を可能に
する形状の開口部を有するシャッタ（膜厚補正板）を備
えるスパッタ装置として、特開平４−１７３９７２号公
報の第５図に示す開口部８ａの形状を有するシャッタ
（膜厚補正板）を備えるものが開示されている。In the above conventional device, the shutter 8
Is used as a means for switching the start and end of film formation, or as a means for preventing the target material from flying to the substrate 4 during pre-sputtering. It also has the function of correcting the film thickness distribution of the thin film. As a sputtering apparatus having a shutter (thickness correction plate) having an opening having a shape capable of correcting the film thickness as described above, a shutter having the shape of the opening 8a shown in FIG. 5 of JP-A-4-173972 is disclosed. A device having a (film thickness correction plate) is disclosed.
【０００５】ところが、このように形状が固定された開
口部を有するシャッタ（膜厚補正板）では、スパッタ中
における種々のスパッタ条件（真空度、ガス導入量、チ
ャンバ内からの放出ガス量、スパッタ電圧、スパッタ電
流等）の変化に対応することが困難である。特に、光学
薄膜の分野においては、酸化膜や窒化膜などの薄膜を、
反応性スパッタ装置を用いて成膜することが多いが、こ
の場合の成膜速度や膜質はターゲットの表面状態に依存
することが知られている。そして、ターゲットの表面状
態は反応性ガスの分圧に関係している。通常、この成膜
速度と反応性ガスの分圧とはヒステリシス曲線を描くよ
うな相関を有することが多く、また、投入電力において
もヒステリシス曲線が大きく異なるため不安定な状態で
あり、上記のようなスパッタ条件が変化し易くなってい
る。However, in the shutter (thickness correction plate) having the opening whose shape is fixed as described above, various sputtering conditions (vacuum degree, gas introduction amount, emission gas amount from the chamber, sputtering) during sputtering are obtained. It is difficult to cope with changes in voltage, sputtering current, etc.). Particularly in the field of optical thin films, thin films such as oxide films and nitride films are
Film formation is often performed using a reactive sputtering apparatus, and it is known that the film formation rate and film quality in this case depend on the surface condition of the target. The surface condition of the target is related to the partial pressure of the reactive gas. Usually, this film formation rate and the partial pressure of the reactive gas often have a correlation that draws a hysteresis curve, and the hysteresis curve is greatly different even at the input power, which is an unstable state. The sputtering conditions are easy to change.
【０００６】[0006]
【発明が解決しようとする課題】そこで、多数の可動な
膜厚補正板により膜厚補正部材を構成し、各膜厚補正板
を駆動させてその開口部の形状を調整し、膜厚分布の変
化に対応できるようにしたものとして、特開昭６１−１
８３４６４号公報の第２図に示すものがある。しかしな
がら、このものでは、各膜厚補正板の駆動機構を作動さ
せる際に、チャンバの真空度を維持できなくなる可能性
があり、取扱い上効率的とは言えない。Therefore, a film thickness correcting member is composed of a large number of movable film thickness correcting plates, and each film thickness correcting plate is driven to adjust the shape of its opening to adjust the film thickness distribution. Japanese Patent Application Laid-Open No. 61-1 / 1986 has been proposed to cope with changes.
There is one shown in FIG. 2 of Japanese Patent No. 83464. However, with this, there is a possibility that the degree of vacuum in the chamber cannot be maintained when operating the drive mechanism of each film thickness correction plate, and it is not efficient in terms of handling.
【０００７】さらに、上記の特開平４−１７３９７２号
公報及び特開昭６１−１８３４６４号公報に開示されて
いる従来技術は、ともに回転する基板上に成膜された薄
膜の径方向の膜厚分布を補正するものであり、上記回転
の開始及び終了時に生じる回転円周方向の膜厚分布を補
正する効果については不明である。Further, the prior art disclosed in the above-mentioned Japanese Patent Laid-Open Nos. 4-173972 and 61-183464 discloses a film thickness distribution in the radial direction of a thin film formed on a rotating substrate. The effect of correcting the film thickness distribution in the circumferential direction of rotation, which occurs at the start and end of the rotation, is unknown.
【０００８】上記問題点に鑑み、本発明は、種々のスパ
ッタ条件の変動により生じる、薄膜の径方向の膜厚分布
の変化や、円周方向の膜厚分布に対応して効率的に膜厚
を補正し得る薄膜の成膜装置を提供し、さらに、その成
膜装置を用いて薄膜を成膜する方法を提供することを課
題とする。In view of the above-mentioned problems, the present invention efficiently responds to changes in the film thickness distribution in the radial direction of the thin film and changes in the film thickness distribution in the circumferential direction caused by changes in various sputtering conditions. It is an object of the present invention to provide a thin film forming apparatus capable of correcting the above-mentioned problem, and further to provide a method for forming a thin film using the film forming apparatus.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決するた
め、本発明の薄膜の成膜装置は、互いに対向する基板と
成膜源とを有するものにおいて、基板上に成膜される薄
膜の成膜速度を規制するための開口部を有する成膜速度
規制部材と、基板上に成膜される薄膜の膜厚を補正する
ための開口部を有する膜厚補正部材とを、基板と成膜源
との間にそれぞれ挿脱自在に設けている。In order to solve the above-mentioned problems, a thin film forming apparatus of the present invention has a substrate and a film forming source which are opposed to each other, and forms a thin film formed on the substrate. A film forming rate control member having an opening for controlling the film speed, and a film thickness correction member having an opening for correcting the film thickness of a thin film formed on the substrate It is provided so that it can be inserted and removed between and.
【００１０】この場合、本発明の薄膜の成膜装置は、基
板と成膜源との間に成膜速度規制部材と膜厚補正部材と
が挿着されるとき、基板、膜厚補正部材、成膜速度規制
部材、成膜源の順序で配設されるように構成されてい
る。In this case, the thin film forming apparatus according to the present invention, when the film forming speed regulating member and the film thickness correcting member are inserted between the substrate and the film forming source, the substrate, the film thickness correcting member, The film forming speed regulating member and the film forming source are arranged in this order.
【００１１】そして、前記成膜速度規制部材を、それぞ
れ面積の異なる２つ以上の開口部を有するように構成
し、各開口部を開口面積の順番に選択可能とすれば、こ
れらの開口部を選択して成膜速度の規制を効率的に行う
ことができる。If the film-forming rate regulating member has two or more openings each having a different area and each opening can be selected in the order of the opening area, these openings can be selected. It is possible to select and efficiently control the film forming rate.
【００１２】また、前記成膜速度規制部材を、それぞれ
面積の異なる開口部を１つずつ有する２枚以上の成膜速
度規制板で構成し、各成膜速度規制板を選択可能とする
ことによっても、各成膜速度規制板を適宜選択して、成
膜速度の規制を効率的に行うことができる。Further, the film-forming rate regulating member is composed of two or more film-forming rate regulating plates each having one opening having a different area, and each of the film-forming rate regulating plates can be selected. Also, it is possible to efficiently control the film forming rate by appropriately selecting each film forming rate regulating plate.
【００１３】一方、前記膜厚補正部材を、それぞれ形状
の異なる２つ以上の開口部を有するように構成し、基板
上の薄膜の膜厚分布に応じて各開口部を選択可能とすれ
ば、各開口部を選択して、膜厚の補正を効率的に行うこ
とができる。On the other hand, if the film thickness correcting member is configured to have two or more openings having different shapes, and each opening can be selected according to the film thickness distribution of the thin film on the substrate, By selecting each opening, the film thickness can be corrected efficiently.
【００１４】また、前記膜厚補正部材の開口部を、選択
可能な２つ以上の可動シャッタを有するように構成し、
基板上の薄膜の膜厚分布に応じて前記可動シャッタを選
択して作動させることにより、前記開口部の開口面積を
増減可能とすることによっても、可動シャッタを選択
し、開口部の開口面積を増減して膜厚の補正を効率的に
行うことができる。Further, the opening of the film thickness correction member is configured to have two or more selectable movable shutters,
By selecting and operating the movable shutter according to the film thickness distribution of the thin film on the substrate, the movable shutter can be selected by increasing or decreasing the opening area of the opening. The thickness can be increased or decreased to efficiently correct the film thickness.
【００１５】これらの場合、特に、外部電気信号を用い
る作動機構により、可動シャッタを作動させる構成とす
れば、チャンバ外部で可動シャッタの作動は制御でき、
チャンバ内部の真空を破るなどの取扱い上の不利を招く
ことがない。In these cases, in particular, if the movable shutter is operated by an operating mechanism using an external electric signal, the operation of the movable shutter can be controlled outside the chamber,
There is no disadvantage in handling such as breaking the vacuum inside the chamber.
【００１６】ところで、前記成膜源としてスパッタリン
グカソードを用いれば、本発明の成膜装置はスパッタ装
置として取扱いが可能である。By using a sputtering cathode as the film forming source, the film forming apparatus of the present invention can be handled as a sputtering apparatus.
【００１７】この場合、前記スパッタリングカソード
と、希ガスから成るスパッタガスと、反応性ガスとを用
いる反応性スパッタリング法として、ターゲット物質と
反応性ガスとの反応により誘電性薄膜を成膜することが
できる。このような反応性ガスとしては、酸素、窒素、
炭素、ケイ素等の元素を含むガスが考えられるが、目的
に応じて、このような単体ガス（Ｏ2、Ｏ3、Ｎ2等）や
化合物ガス（Ｎ2Ｏ、Ｈ2Ｏ、ＮＨ3等）のみならずこれ
らを混合して成る混合ガスを用いても良い。In this case, as a reactive sputtering method using the sputtering cathode, a sputtering gas composed of a rare gas, and a reactive gas, a dielectric thin film can be formed by a reaction between a target substance and the reactive gas. it can. Such reactive gases include oxygen, nitrogen,
Gases containing elements such as carbon and silicon are conceivable, but depending on the purpose, such simple substance gas (O 2 , O 3 , N 2 etc.) or compound gas (N 2 O, H 2 O, NH 3 etc.) ) As well as a mixed gas obtained by mixing these.
【００１８】さらにこの場合、前記希ガスから成るスパ
ッタガスにより、前記スパッタリングカソードのターゲ
ット金属をスパッタリングして基板上にターゲット金属
の成膜を行う金属成膜手段と、前記反応性ガスにより、
前記基板上に成膜された金属薄膜を酸化させる酸化手段
または窒化させる窒化手段とを備えた構造の成膜装置を
用いることにより、スパッタ領域と反応領域とを分割で
きて、より効率的に誘電性薄膜の成膜が可能である。Further, in this case, the sputtering gas composed of the rare gas is used to sputter the target metal of the sputtering cathode to form a film of the target metal on the substrate, and the reactive gas.
By using a film forming apparatus having a structure including an oxidizing unit that oxidizes a metal thin film formed on the substrate or a nitriding unit that nitrides the thin metal film, the sputtering region and the reaction region can be divided, and the dielectric layer can be more efficiently formed. It is possible to form a conductive thin film.
【００１９】そして、上記の成膜装置を用いて薄膜を成
膜する方法として、最初に、前記薄膜の膜厚の所定割合
を成膜する第１工程と、次に、該第１工程で成膜された
薄膜の膜厚分布を計測する第２工程と、さらに、前記基
板と前記成膜源との間に、前記成膜速度規制板を挿着し
て、前記第１工程より成膜速度を遅くすると共に、前記
基板と前記成膜源との間に、前記第２工程で計測した膜
厚分布に応じて前記膜厚補正板を挿着して、薄膜の膜厚
を補正する第３工程とを順次行えば、第１工程で所望膜
厚の大部分（９５％程度以上）を成膜した後、第２工程
で膜厚分布をモニタしながら、第３工程における膜厚補
正板で膜厚を補正して所望の均等な膜厚を得ることが可
能である。As a method of forming a thin film using the above film forming apparatus, first, a first step of forming a predetermined ratio of the film thickness of the thin film and then the first step are performed. A second step of measuring the film thickness distribution of the formed thin film, and further, the film forming rate regulating plate is inserted between the substrate and the film forming source, and the film forming rate is obtained from the first step. And a film thickness correcting plate is inserted between the substrate and the film forming source according to the film thickness distribution measured in the second step to correct the film thickness of the thin film. By sequentially performing the steps, after forming most of the desired film thickness (about 95% or more) in the first step, the film thickness correction plate in the third step is used while monitoring the film thickness distribution in the second step. It is possible to correct the film thickness to obtain a desired uniform film thickness.
【００２０】この場合、上記工程後に、前記第３工程に
おいて成膜された薄膜の膜厚分布を計測する第２工程を
再び行い、その後、前記基板と前記成膜源との間に、該
直前に行った第３工程より成膜速度を規制し得る開口部
を有する成膜速度規制板を挿着して、前記直前の第３工
程より成膜速度を遅くする作動と、前記基板と前記成膜
源との間に、前記直前に行った第３工程後に再び行う前
記直前の第２工程で計測した膜厚分布に応じて膜厚を補
正し得る開口部を有する膜厚補正板を挿着して薄膜の膜
厚を補正する作動とを同時に行う現在の第３工程と、該
現在の第３工程において成膜された薄膜の膜厚分布を計
測する現在の第２工程とを、同一サイクルとして繰り返
して行うと最終的に所望の膜厚の薄膜が得られる。この
所望膜厚の薄膜の成膜は、その時点での第２工程の計測
により確認される。In this case, after the above step, the second step of measuring the film thickness distribution of the thin film formed in the third step is performed again, and thereafter, immediately before the step between the substrate and the film forming source. The film forming rate regulating plate having an opening capable of regulating the film forming rate from the third step performed in step 3 is inserted, and the film forming rate is made slower than the immediately preceding third step. A film thickness correction plate having an opening capable of correcting the film thickness according to the film thickness distribution measured in the immediately preceding second step performed again after the third step performed immediately before is inserted between the film source and the film source. And the current second step of measuring the film thickness distribution of the thin film formed in the present third step are performed in the same cycle. By repeating the above procedure, a thin film having a desired film thickness is finally obtained. The film formation of the thin film having the desired film thickness is confirmed by the measurement in the second step at that time.
【００２１】また、前記同一サイクルにおいて、前記第
２工程を、前記第１工程及び前記第３工程と同時に行う
と、膜厚モニタの計測のフィードバックがさらに迅速に
行われ、より効率的に膜厚分布の補正ができる。Further, in the same cycle, if the second step is performed simultaneously with the first step and the third step, the measurement feedback of the film thickness monitor can be performed more quickly, and the film thickness can be more efficiently achieved. The distribution can be corrected.
【００２２】[0022]
【発明の実施の形態】図３は、本発明に用いる反応性ス
パッタリング装置の概略を示す。図１の反応性スパッタ
リング装置と異なるのは、基板ホルダ３の近傍に、２枚
の第１及び第２の膜厚補正板１３、１４で構成される膜
厚補正部材が設けられていることである。この第１及び
第２の膜厚補正板１３、１４はともに回転軸１５で軸支
されており、回転軸１５まわりにそれぞれ独立に回転可
能である。また、図４は、図３のシャッタ８の上面図で
ある。図３の成膜装置に用いるシャッタ８は、それぞれ
開口部面積の異なる開口部８ａ、８ｂ、８ｃが設けら
れ、回転軸９まわりに回転することにより開口面積の順
番に開口部８ａ、８ｂ、８ｃのいずれかを選択できるよ
うにしている。また、図５は第１膜厚補正板１３の上面
図、図６は第２膜厚補正板１４の上面図である。図５の
第１膜厚補正板１３に開口部１３ａが設けられ、図６の
第２膜厚補正板１４に開口部１４ａが設けられている。
各開口部１３ａ、１４ａはそれぞれ形状が異なってい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 3 schematically shows a reactive sputtering apparatus used in the present invention. The difference from the reactive sputtering apparatus of FIG. 1 is that a film thickness correction member composed of two first and second film thickness correction plates 13 and 14 is provided near the substrate holder 3. is there. Both the first and second film thickness correction plates 13 and 14 are pivotally supported by a rotary shaft 15 and can rotate independently around the rotary shaft 15. Further, FIG. 4 is a top view of the shutter 8 of FIG. The shutter 8 used in the film forming apparatus of FIG. 3 is provided with openings 8a, 8b, 8c having different opening areas, and by rotating around the rotation axis 9, the openings 8a, 8b, 8c are arranged in the order of the opening areas. You are able to choose either. 5 is a top view of the first film thickness correction plate 13, and FIG. 6 is a top view of the second film thickness correction plate 14. The opening 13a is provided in the first film thickness correction plate 13 of FIG. 5, and the opening 14a is provided in the second film thickness correction plate 14 of FIG.
The openings 13a and 14a have different shapes.
【００２３】図３の成膜装置により、ガラス基板４上に
成膜を行うに際しては、まず、図１の場合と同様の前処
理とプレスパッタとを行った後、ガス導入口１２ａから
スパッタガスとしてＡｒガスを導入すると共に、ガス導
入口１２ｂから反応性ガスとして酸素ガスを導入し、さ
らに、シャッタ８を回転軸９まわりに回転させて開口部
８ａがターゲット５上に位置する状態で、スパッタカソ
ード６に電力を印加してスパッタカソード６上のＴｉタ
ーゲット５を作動させ、これにより、ＴｉＯ2から成る
酸化膜を基板４上に成膜する。このとき、基板ホルダ３
は回転軸２まわりに回転しており、これに伴って基板４
も回転されている。そして、基板４上のＴｉＯ2の成膜
を所定時間継続し、薄膜が所望膜厚のおおむね９５％程
度以上になるまで成膜できた時点で、再び、シャッタ８
を回転させて開口部８ａ、８ｂ、８ｃのいずれもがター
ゲット５上に位置しないようにして成膜を終了させる。When forming a film on the glass substrate 4 by the film forming apparatus of FIG. 3, first, the same pretreatment and pre-sputtering as in the case of FIG. 1 are performed, and then the sputtering gas is introduced from the gas inlet 12a. As Ar gas, oxygen gas as a reactive gas is introduced from the gas inlet 12b, and the shutter 8 is rotated around the rotation axis 9 so that the opening 8a is located on the target 5 and the sputtering is performed. Electric power is applied to the cathode 6 to operate the Ti target 5 on the sputter cathode 6, thereby forming an oxide film made of TiO 2 on the substrate 4. At this time, the substrate holder 3
Is rotating around the rotation axis 2, and the substrate 4 is accordingly rotated.
Is also being rotated. Then, the film formation of TiO 2 on the substrate 4 is continued for a predetermined time, and when the thin film is formed to a film thickness of approximately 95% or more of the desired film thickness, the shutter 8 is again formed.
Is rotated so that none of the openings 8a, 8b, 8c are located on the target 5 and the film formation is completed.
【００２４】なお、本実施の形態では、誘電性薄膜とし
てＴｉＯ2から成る酸化膜を成膜したが、ガス導入口１
２ｂから反応性ガスとして窒素ガスを導入すれば、窒化
膜の形成も可能である。In this embodiment, an oxide film made of TiO 2 is formed as the dielectric thin film, but the gas inlet 1
If nitrogen gas is introduced as a reactive gas from 2b, a nitride film can be formed.
【００２５】次に、このようにして基板４上に成膜され
る薄膜の膜厚を膜厚モニタ１０により計測する。膜厚モ
ニタ１０は、基板４上の薄膜の膜厚を３点で計測してい
るが、この３点データを所定時間ごとに計測することに
より、基板ホルダ３の回転円における径方向の薄膜の膜
厚分布をモニタできる。Next, the film thickness of the thin film thus formed on the substrate 4 is measured by the film thickness monitor 10. The film thickness monitor 10 measures the film thickness of the thin film on the substrate 4 at three points. By measuring the data of these three points every predetermined time, the film thickness of the thin film in the radial direction on the rotation circle of the substrate holder 3 is measured. The film thickness distribution can be monitored.
【００２６】さらに、この計測結果で得られる膜厚分布
を補正するのに適したものを第１及び第２の膜厚補正板
１３、１４のうちから選択して回転軸１５を回転させて
基板４とターゲット５との間に挿着する。同時に、シャ
ッタ８を回転させて開口部８ｂをターゲット５上に位置
させて、所望膜厚の残り（おおむね５％以下）の成膜を
再開する。Further, a substrate suitable for correcting the film thickness distribution obtained from the measurement result is selected from the first and second film thickness correcting plates 13 and 14 and the rotary shaft 15 is rotated. It is inserted between 4 and the target 5. At the same time, the shutter 8 is rotated to position the opening 8b on the target 5 and the film formation for the rest of the desired film thickness (approximately 5% or less) is restarted.
【００２７】このときに、シャッタ８の開口部を８ａか
ら８ｂに変更したのは、開口面積を小さくして成膜速度
を前回成膜時より遅くするためである。薄膜の膜厚に求
められる厳密な均等性を実現するためには、成膜の開始
及び終了の際にシャッタが開閉する瞬間の成膜の有無が
円周方向の膜厚分布の形成に大きく影響するが、上記の
ように成膜速度を小さくするとこの影響が軽減できるの
である。この意味において、開口部８ａ、８ｂ、８ｃを
有するシャッタ８は、開口部面積の異なる開口部８ａ、
８ｂ、８ｃのいずれかを選択することにより、その開口
面積を変更できて、成膜速度規制部材として機能してい
る。また、このような方法による成膜速度の低下は、ス
パッタカソード６の印加電力を軽減することにより成膜
速度を低下させる場合と異なり、ターゲット５の表面状
態や反応性ガスの分圧などを変動させるものではないた
め、スパッタ条件自体に影響を与えるものではない。At this time, the reason why the opening portion of the shutter 8 is changed from 8a to 8b is that the opening area is made smaller and the film forming speed is made slower than the previous film forming time. In order to achieve the strict uniformity required for thin film thickness, the presence or absence of film formation at the moment the shutter opens and closes at the start and end of film formation greatly affects the formation of the film thickness distribution in the circumferential direction. However, this effect can be reduced by reducing the film formation rate as described above. In this sense, the shutter 8 having the openings 8a, 8b, and 8c includes the openings 8a, 8a having different opening areas.
By selecting either 8b or 8c, the opening area can be changed, and it functions as a film formation rate regulating member. Further, unlike the case where the film formation rate is reduced by reducing the power applied to the sputtering cathode 6, the decrease in the film formation rate by such a method changes the surface state of the target 5 and the partial pressure of the reactive gas. It does not affect the sputtering conditions itself.
【００２８】なお、本実施の形態では、複数の開口部を
有する１枚のシャッタを用いたが、それぞれ面積の異な
る開口部を１つずつ有する２枚以上のシャッタを用い、
各シャッタを適宜選択して、成膜速度の規制を行う構成
としても良い。Although one shutter having a plurality of openings is used in this embodiment, two or more shutters each having one opening having a different area are used.
A configuration may be adopted in which each shutter is appropriately selected and the film formation rate is regulated.
【００２９】そして、基板４上のＴｉＯ2の成膜を所定
時間継続し、薄膜の大部分（おおむね、上記残り５％の
うちの９５％程度）を成膜できた時点で、再び、シャッ
タ８を回転させて開口部８ａ、８ｂ、８ｃのいずれもが
ターゲット５上に位置しないようにして成膜を終了させ
る。The film formation of TiO 2 on the substrate 4 is continued for a predetermined time, and when most of the thin film (generally about 95% of the remaining 5%) can be formed, the shutter 8 is again formed. Is rotated so that none of the openings 8a, 8b, 8c are located on the target 5 and the film formation is completed.
【００３０】さらに、このようにして基板４上に成膜さ
れる薄膜の膜厚を膜厚モニタ１０により計測し、この計
測結果で得られる膜厚分布を補正するのに適したものを
第１及び第２の膜厚補正板１３、１４のうちから選択し
て回転軸１５を回転させて基板４とターゲット５との間
に挿着する。同時に、シャッタ８を回転させて開口部８
ｃをターゲット５上に位置させて、所望膜厚の残りの成
膜を再開する。Further, the thickness of the thin film thus formed on the substrate 4 is measured by the film thickness monitor 10, and the one suitable for correcting the film thickness distribution obtained from the measurement result is the first one. Then, the rotary shaft 15 is selected by selecting from the second film thickness correction plates 13 and 14 and is inserted between the substrate 4 and the target 5. At the same time, the shutter 8 is rotated to open the opening 8
Position c on the target 5 and restart the remaining film formation of the desired film thickness.
【００３１】このような工程を繰り返して、薄膜モニタ
１０の計測値が、膜厚の所望値を示した時点で全成膜工
程を終了する。By repeating the above steps, the entire film forming step is completed when the measured value of the thin film monitor 10 indicates the desired value of the film thickness.
【００３２】なお、本実施の形態では、膜厚補正部材と
して第１及び第２の膜厚補正板１３、１４のように開口
部形状が一定のものを２枚用いたが、１枚の膜厚補正板
に形状の異なる２つ以上の開口部を有するものを用いて
も良く、さらに、図７に示すように開口形状１６ａを調
整できる第３膜厚補正板１６を用いることもできる。
（第３膜厚補正板１６の詳細については下記［実施例
３］参照。）このような第１乃至第３の膜厚補正板１
３、１４、１６は、外部電気信号を用いる作動機構によ
り作動させる構成とすれば、チャンバ外部で制御でき、
チャンバ内部の真空を破るなどの取扱い上の不利を招く
ことがない。In this embodiment, two film thickness correcting members having the same opening shape, such as the first and second film thickness correcting plates 13 and 14, are used. A thickness correction plate having two or more openings having different shapes may be used, and a third film thickness correction plate 16 capable of adjusting the opening shape 16a as shown in FIG. 7 may be used.
(For details of the third film thickness correction plate 16, refer to the following [Example 3].) Such first to third film thickness correction plates 1
3, 14, 16 can be controlled outside the chamber if configured to be operated by an operating mechanism using an external electric signal,
There is no disadvantage in handling such as breaking the vacuum inside the chamber.
【００３３】[0033]
【実施例】[実施例１]図３のスパッタ装置を用い、基板
ホルダ３上に光学研磨した直径２００ｍｍのドーナツ状
のガラス基板を載置した後、チャンバ１内を１×１０-5
Ｐａ以下に真空排気した。ガス導入口１１からＡｒガス
を２０ｓｃｃｍ、ガス導入口１２ｂから酸素ガスを５ｓ
ｃｃｍでそれぞれ導入し、チャンバ１内を０．５Ｐａに
保つ。第１及び第２の膜厚補正板１３、１４は基板上に
なく退避させた状態にして、シャッタ８の開口部８ａ、
８ｂ、８ｃのいずれもがスパッタカソード６上に位置し
ないことを確認して基板ホルダ３を回転軸２まわりに１
５００ｒｐｍで回転させた。スパッタカソード６に異常
放電対策を考慮したパルスＤＣパワーを２ｋＷで印加し
て放電を開始した。このときのターゲット材質はＴｉで
ある。シャッタ８の開口部８ａをスパッタカソード６上
に位置させ成膜を開始した。このときのＴｉＯ2の成膜
速度は２００Å／ｍｉｎである。既に調整済みの膜厚モ
ニタ１０により１９９０Åの膜厚（測定ポイント中の最
大値）を計測した瞬間にシャッタ８を閉じた。Example 1 Using the sputtering apparatus of FIG. 3, an optically polished doughnut-shaped glass substrate having a diameter of 200 mm was placed on the substrate holder 3, and then the inside of the chamber 1 was set at 1 × 10 −5.
It was evacuated to Pa or less. 20 sccm of Ar gas from the gas inlet 11 and 5 s of oxygen gas from the gas inlet 12b
ccm, respectively, and the inside of the chamber 1 is maintained at 0.5 Pa. When the first and second film thickness correction plates 13 and 14 are not on the substrate and are in a retracted state, the opening 8a of the shutter 8 is
Confirm that neither 8b nor 8c is located on the sputter cathode 6, and place the substrate holder 3 around the rotation axis 2
It was rotated at 500 rpm. A pulsed DC power of 2 kW was applied to the sputter cathode 6 in consideration of abnormal discharge measures to start discharge. The target material at this time is Ti. The opening 8a of the shutter 8 was positioned on the sputter cathode 6 to start film formation. The film forming rate of TiO 2 at this time is 200 Å / min. The shutter 8 was closed at the moment when the film thickness of 1990 Å (the maximum value in the measurement points) was measured by the film thickness monitor 10 which had already been adjusted.
【００３４】次に、膜厚モニタで得られた結果に対し
て、開口部形状１３ａを有する第１膜厚補正板１３をス
パッタカソード６と基板４表面との間に移動した。次
に、シャッタ８の開口部８ｂをスパッタカソード６上に
移動した。この時の成膜速度は２０Å／ｍｉｎである。
膜厚モニタ１０が合計で２０００Å（測定ポイント中の
最大値）の膜厚を計測した瞬間にシャッタ８を閉じた。Next, with respect to the result obtained by the film thickness monitor, the first film thickness correction plate 13 having the opening shape 13a was moved between the sputter cathode 6 and the surface of the substrate 4. Next, the opening 8b of the shutter 8 was moved onto the sputter cathode 6. The film forming rate at this time is 20 Å / min.
The shutter 8 was closed at the moment when the film thickness monitor 10 measured a total film thickness of 2000 Å (the maximum value in the measurement points).
【００３５】成膜終了後、基板４を取り出し、薄膜の膜
厚と基板４上の膜厚分布とをエリプソメータで測定した
ところ、平均膜厚は２０００．３Åで、膜厚分布は該膜
厚に対して±０．０８％の散布度を有するものであっ
た。また、同様の実験を５回繰り返して再現性を測定し
たところ、平均膜厚と膜厚分布を示す散布度として、２
０００．０ű０．０８％、２０００．５ű０．０５
％、１９９８．８ű０．０８％、２０００．１ű
０．０６％及び１９９９．６ű０．０７％で示される
結果が得られた。After the film formation was completed, the substrate 4 was taken out and the film thickness of the thin film and the film thickness distribution on the substrate 4 were measured by an ellipsometer. The average film thickness was 2000.3Å On the other hand, it had a dispersity of ± 0.08%. In addition, the same experiment was repeated 5 times to measure the reproducibility.
000.0Å ± 0.08%, 2000.5Å ± 0.05
%, 1998.8Å ± 0.08%, 2000.1Å ±
The results shown were 0.06% and 1999.6Å ± 0.07%.
【００３６】[実施例２]［実施例１］と同様に図３のス
パッタ装置を用い、同様の条件で成膜を開始する。そし
て、ＴｉＯ2の成膜速度が２００Å／ｍｉｎで、膜厚モ
ニタ１０により１９９０Åの膜厚を計測した瞬間にシャ
ッタ８を最初に閉じた。このときの膜厚モニタは１点計
測により、基板４の径方向に移動しながら基板４の複数
箇所の測定を行った。[Embodiment 2] Similar to [Embodiment 1], the sputtering apparatus of FIG. 3 is used to start film formation under the same conditions. Then, the shutter 8 was first closed at the moment when the film thickness of TiO 2 was 200 Å / min and the film thickness monitor 10 measured the film thickness of 1990 Å. The film thickness monitor at this time measured at a plurality of points on the substrate 4 while moving in the radial direction of the substrate 4 by one-point measurement.
【００３７】次に、開口部１３ａを有する第１膜厚補正
板１３と、シャッタ８の開口部８ｂとを用いて、２０Å
／ｍｉｎの成膜速度で膜厚モニタ１０が合計で１９９６
Åの膜厚を計測したところで、再びシャッタ８を閉じ
た。Next, using the first film thickness correction plate 13 having the opening 13a and the opening 8b of the shutter 8, 20Å
Total film thickness monitor 10 at film forming speed of 1996 / min
When the film thickness of Å was measured, the shutter 8 was closed again.
【００３８】次に、開口部１４ａを有する第２膜厚補正
板１４と、シャッタ８の開口部８ｃとを用いて、５Å／
ｍｉｎの成膜速度で膜厚モニタ１０が合計で２０００Å
の膜厚を計測したところで、再びシャッタ８を閉じた。Next, using the second film thickness correction plate 14 having the opening 14a and the opening 8c of the shutter 8, 5Å /
The film thickness monitor 10 has a total film thickness of 2000Å at the film forming speed of min.
When the film thickness was measured, the shutter 8 was closed again.
【００３９】成膜終了後、基板４を取り出し、薄膜の膜
厚と基板４上の膜厚分布とをエリプソメータで測定した
ところ、平均膜厚は２０００．０Åで、膜厚分布は該膜
厚に対して±０．０２％の散布度を有するものであっ
た。After film formation, the substrate 4 was taken out and the film thickness of the thin film and the film thickness distribution on the substrate 4 were measured by an ellipsometer. The average film thickness was 2000.0Å On the other hand, it had a dispersity of ± 0.02%.
【００４０】[実施例３]図３のスパッタ装置の第１及び
第２の膜厚補正板１３、１４の替りに、図７に上面図と
して示す第３膜厚補正板１６を用いた。第３膜厚補正板
１６は、マイクロシリンダ１７1 〜１７14にシャッタ羽
根板１８1 〜１８14をそれぞれ連結させ、回転軸１９を
経由した信号ケーブル２０により、マイクロシリンダ１
７1 〜１７14のそれぞれの伸縮を自由に行うことがで
き、羽根板１８1 〜１８ 14が作動することによって、開
口部１６ａの形状を任意に変えることができる構造にな
っている。[Third Embodiment] The first and second sputtering devices of FIG.
Instead of the second film thickness correction plates 13 and 14, FIG.
The third film thickness correction plate 16 shown below was used. Third film thickness correction plate
16 is a micro cylinder 171~ 1714On shutter feather
Root plate 181~ 1814And connect the rotary shaft 19
The signal cable 20 passed through the microcylinder 1
71~ 1714You can freely expand and contract each
The blade 181~ 18 14Is activated,
It has a structure that allows the shape of the mouth 16a to be changed arbitrarily.
ing.
【００４１】第３膜厚補正板１６を、第１及び第２の膜
厚補正板１３、１４の替りに用いた以外は、［実施例
２］と同様にして第３膜厚補正板１６の開口部１６ａの
形状を適宜変更して成膜を行ったところ、成膜後の平均
膜厚は２０００．０Åで、膜厚分布は該膜厚に対して±
０．０３％の散布度を有するものであった。The third film thickness correction plate 16 is replaced by the third film thickness correction plate 16 in the same manner as in [Example 2] except that the first and second film thickness correction plates 13 and 14 are used. When the film was formed by appropriately changing the shape of the opening 16a, the average film thickness after film formation was 2000.0Å, and the film thickness distribution was ±
It had a dispersity of 0.03%.
【００４２】［比較例１］図１のスパッタ装置を用い、
基板ホルダ３上に光学研磨した直径２００ｍｍのドーナ
ツ状のガラス基板を載置した後、チャンバ１内を１×１
０-5Ｐａ以下に真空排気した。ガス導入口１１からＡｒ
ガスを２０ｓｃｃｍ、ガス導入口１２ｂから酸素ガスを
５ｓｃｃｍでそれぞれ導入し、チャンバ１内を０．５Ｐ
ａに保つ。膜厚シャッタ８の開口部８ａがスパッタカソ
ード６上に位置しないことを確認して基板ホルダ３を回
転軸２まわりに１５００ｒｐｍで回転させた。スパッタ
カソード６に異常放電対策を考慮したパルスＤＣパワー
を２ｋＷで印加して放電を開始した。このときのターゲ
ット材質はＴｉである。シャッタ８の開口部８ａをスパ
ッタカソード６上に位置させ成膜を開始した。このとき
のＴｉＯ 2の成膜速度は２００Å／ｍｉｎである。既に
調整済みの膜厚モニタ１０により２０００Åの膜厚を計
測した瞬間にシャッタ８を閉じた。[Comparative Example 1] Using the sputtering apparatus shown in FIG.
Optically polished donor on substrate holder 3 with a diameter of 200 mm
After placing the glass substrate in the shape of a tree, the inside of the chamber 1 is 1 × 1.
0-FiveIt was evacuated to Pa or less. Ar from gas inlet 11
20 sccm gas, oxygen gas from the gas inlet 12b
Introduced at 5sccm, 0.5P inside chamber 1
keep at a. The opening 8a of the film thickness shutter 8 is sputtered.
Check that it is not on the board 6 and rotate the substrate holder 3
It was rotated around the rotation axis 2 at 1500 rpm. Spatter
Pulsed DC power for the cathode 6 considering measures against abnormal discharge
Was applied at 2 kW to start discharge. Target at this time
The material of the grit is Ti. Spare the opening 8a of the shutter 8.
It was placed on the cathode 6 and film formation was started. At this time
TiO 2The film-forming speed is 200 Å / min. already
The adjusted film thickness monitor 10 measures the film thickness of 2000Å.
The shutter 8 was closed at the moment of measurement.
【００４３】成膜終了後、基板４を取り出し、薄膜の膜
厚と基板４上の膜厚分布とをエリプソメータで測定した
ところ、平均膜厚は２００４．６Åで、膜厚分布は該膜
厚に対して±３．２％の散布度を有するものであった。After the film formation was completed, the substrate 4 was taken out, and the film thickness of the thin film and the film thickness distribution on the substrate 4 were measured by an ellipsometer. The average film thickness was 2004.6 Å, and the film thickness distribution showed that film thickness. On the other hand, it had a dispersity of ± 3.2%.
【００４４】［比較例２〜６］［比較例１］と全く同一
の条件で５回測定を行った。このときの平均膜厚と膜厚
分布を示す散布度として、１９９８．７ű０．６％、
１９９７．７ű４．５％、２００１．０ű２．１
％、１９９８．０ű１．４％及び２００３．３ű
１．８％で示される結果が得られた。[Comparative Examples 2 to 6] Measurements were performed 5 times under exactly the same conditions as in [Comparative Example 1]. At this time, the average film thickness and the distribution showing the film thickness distribution are as follows: 19988.7Å ± 0.6%,
19977.7Å ± 4.5%, 2001.0Å ± 2.1
%, 1998.0Å ± 1.4% and 2003.3Å ±
The results shown were 1.8%.
【００４５】[0045]
【発明の効果】以上の説明から明らかなように、本発明
は、通常の成膜法により薄膜の所望膜厚の大部分を成膜
した後、基板上に成膜される薄膜の膜厚と膜厚分布との
計測結果に基づき、膜厚補正板を最適に選択し、シャッ
タの開口面積を調整して成膜速度を低下させた状態で、
残りの膜厚部分を成膜するので、回転基板の径方向及び
円周方向に良好な精度で均等な膜厚分布を有する薄膜を
成膜できる。As is apparent from the above description, according to the present invention, the film thickness of a thin film to be formed on a substrate after forming a large part of a desired film thickness of a thin film by an ordinary film forming method. Based on the measurement result with the film thickness distribution, the film thickness correction plate is optimally selected, the opening area of the shutter is adjusted, and the film formation speed is reduced.
Since the remaining film thickness portion is formed, a thin film having a uniform film thickness distribution can be formed with good accuracy in the radial direction and the circumferential direction of the rotating substrate.
【００４６】また、上記の計測結果に基づき、低成膜速
度下での膜厚補正を繰り返すことにより、さらに高精度
に均等な膜厚分布を有して薄膜が効率よく成膜される。Further, by repeating the film thickness correction under the low film forming speed based on the above measurement result, the thin film can be formed with high accuracy and uniform film thickness distribution.
【図１】従来の反応性スパッタリング装置の概略断面図FIG. 1 is a schematic sectional view of a conventional reactive sputtering apparatus.
【図２】図１のシャッタ（成膜速度規制板）の上面図FIG. 2 is a top view of the shutter (deposition rate control plate) of FIG.
【図３】本発明の［実施例１］及び［実施例２］におい
て用いる反応性スパッタリング装置の概要断面図FIG. 3 is a schematic cross-sectional view of a reactive sputtering apparatus used in [Example 1] and [Example 2] of the present invention.
【図４】図３のシャッタ（成膜速度規制板）の上面図FIG. 4 is a top view of the shutter (deposition rate control plate) of FIG.
【図５】図３の第１膜厚補正板の上面図5 is a top view of the first film thickness correction plate of FIG.
【図６】図３の第２膜厚補正板の上面図6 is a top view of the second film thickness correction plate of FIG.
【図７】本発明の［実施例３］において用いる第３膜厚
補正板の上面図FIG. 7 is a top view of a third film thickness correction plate used in [Example 3] of the present invention.
４ 基板
６ スパッタカソード
８ シャッタ ８ａ、８ｂ、８ｃ 開口部
１０ 膜厚モニタ
１０ａ1-１０ｂ1 第１モニタ
１０ａ2-１０ｂ2 第２モニタ
１０ａ3-１０ｂ3 第３モニタ
１３ 第１膜厚補正板 １４ 第２膜厚補正板
１６ 第３膜厚補正板
１３ａ、１４ａ、１６ａ 開口部
１８1 〜１８14 シャッタ羽根板（可動シャッタ）4 substrate 6 sputter cathode 8 shutters 8a, 8b, 8c opening 10 film thickness monitor 10a 1 -10b 1 first monitor 10a 2 -10b 2 second monitor 10a 3 -10b 3 third monitor 13 first film thickness correction plate 14 Second film thickness correction plate
16 Third film thickness correction plates 13a, 14a, 16a Openings 18 1 to 18 14 Shutter blade plate (movable shutter)
───────────────────────────────────────────────────── フロントページの続き (72)発明者 池田 智 千葉県山武郡山武町横田523 株式会社ア ルバック千葉超材料研究所内 (72)発明者 川村 裕明 千葉県山武郡山武町横田523 株式会社ア ルバック千葉超材料研究所内 (72)発明者 石橋 暁 千葉県山武郡山武町横田523 株式会社ア ルバック千葉超材料研究所内 (72)発明者 半澤 幸一 神奈川県茅ヶ崎市萩園2500 株式会社アル バック内 (72)発明者 松元 孝文 神奈川県茅ヶ崎市萩園2500 株式会社アル バック内 Ｆターム(参考） 2H048 GA51 GA57 GA60 2K009 BB02 CC03 DD04 DD09 4K029 AA09 BA48 BC07 BD09 CA06 DC03 DC34 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Satoshi Ikeda 523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture Lubac Chiba Institute for Materials Research (72) Inventor Hiroaki Kawamura 523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture Lubac Chiba Institute for Materials Research (72) Inventor Akira Ishibashi 523 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture Lubac Chiba Institute for Materials Research (72) Inventor Koichi Hanzawa 2500 Hagien, Chigasaki-shi, Kanagawa Al In the back (72) Inventor Takafumi Matsumoto 2500 Hagien, Chigasaki-shi, Kanagawa Al In the back F-term (reference) 2H048 GA51 GA57 GA60 2K009 BB02 CC03 DD04 DD09 4K029 AA09 BA48 BC07 BD09 CA06 DC03 DC34
Claims (12)
膜の成膜装置において、前記基板上に成膜される薄膜の
成膜速度を規制するための開口部を有する成膜速度規制
部材と、前記基板上に成膜される薄膜の膜厚を補正する
ための開口部を有する膜厚補正部材とを、前記基板と前
記成膜源との間にそれぞれ挿脱自在に設けることを特徴
とする薄膜の成膜装置。1. A thin film forming apparatus having a substrate and a film forming source which face each other, and a film forming rate regulating member having an opening for regulating a film forming rate of a thin film formed on the substrate. And a film thickness correction member having an opening for correcting the film thickness of the thin film formed on the substrate, respectively, are provided between the substrate and the film forming source so as to be freely inserted and removed. Thin film deposition device.
度規制部材と前記膜厚補正部材とが挿着されるとき、前
記基板、前記膜厚補正部材、前記成膜速度規制部材、前
記成膜源の順序で配設されることを特徴とする請求項１
に記載の薄膜の成膜装置。2. The substrate, the film thickness correction member, and the film formation speed control when the film formation speed control member and the film thickness correction member are inserted between the substrate and the film formation source. The member and the film forming source are arranged in this order.
The thin film forming apparatus described in [3].
異なる２つ以上の開口部を有し、各開口部は開口面積の
順番に選択可能であることを特徴とする請求項１または
２に記載の薄膜の成膜装置。3. The film forming speed regulating member has two or more openings each having a different area, and each opening can be selected in order of opening area. The thin film forming apparatus described in [3].
異なる開口部を１つずつ有する２枚以上の成膜速度規制
板から成り、各成膜速度規制板は選択可能であることを
特徴とする請求項１または２に記載の薄膜の成膜装置。4. The film forming speed regulating member comprises two or more film forming speed regulating plates each having one opening having a different area, and each film forming speed regulating plate is selectable. The thin film forming apparatus according to claim 1 or 2.
る２つ以上の開口部を有し、基板上の薄膜の膜厚分布に
応じて各開口部が選択可能であることを特徴とする請求
項１乃至４のいずれか１項に記載の薄膜の成膜装置。5. The film thickness correcting member has two or more openings each having a different shape, and each opening can be selected according to the film thickness distribution of the thin film on the substrate. The thin film forming apparatus according to any one of claims 1 to 4.
２つ以上の可動シャッタを有し、基板上の薄膜の膜厚分
布に応じて前記可動シャッタを選択して作動させること
により、前記開口部の開口面積が増減可能であることを
特徴とする請求項１乃至４のいずれか１項に記載の薄膜
の成膜装置。6. An opening of the film thickness correction member has two or more selectable movable shutters, and the movable shutter is selected and operated according to a film thickness distribution of a thin film on a substrate. The thin film forming apparatus according to any one of claims 1 to 4, wherein the opening area of the opening can be increased or decreased.
成ることを特徴とする請求項１乃至６のいずれか１項に
記載の薄膜の成膜装置。7. The thin film forming apparatus according to claim 1, wherein the film forming source comprises a sputtering cathode.
ら成るスパッタガスと、反応性ガスとを用いる反応性ス
パッタリング法により、誘電性薄膜を成膜することを特
徴とする請求項７に記載の薄膜の成膜装置。8. The thin film according to claim 7, wherein the dielectric thin film is formed by a reactive sputtering method using the sputtering cathode, a sputtering gas composed of a rare gas, and a reactive gas. Deposition apparatus.
前記スパッタリングカソードのターゲット金属をスパッ
タリングして基板上にターゲット金属の成膜を行う金属
成膜手段と、前記反応性ガスにより前記基板上に成膜さ
れた金属薄膜を酸化させる酸化手段または窒化させる窒
化手段とを備え、誘電性薄膜を成膜することを特徴とす
る請求項８に記載の薄膜の成膜装置。9. A sputtering gas composed of the rare gas,
Metal film forming means for sputtering the target metal of the sputtering cathode to form a target metal on the substrate, and oxidizing means or nitriding for oxidizing the metal thin film formed on the substrate by the reactive gas. 9. A thin film forming apparatus according to claim 8, further comprising: a means for forming a dielectric thin film.
基板上に薄膜を成膜する装置を用いて薄膜を成膜する方
法において、最初に、前記薄膜の膜厚の所定割合を成膜
する第１工程と、次に、該第１工程で成膜された薄膜の
膜厚分布を計測する第２工程と、さらに、前記基板と前
記成膜源との間に、前記成膜速度規制板を挿着して、前
記第１工程より成膜速度を遅くすると共に、前記基板と
前記成膜源との間に、前記第２工程で計測した膜厚分布
に応じて前記膜厚補正板を挿着して、薄膜の膜厚を補正
する第３工程とから成ることを特徴とする薄膜の成膜方
法。10. A substrate and a film forming source facing each other,
In a method of forming a thin film using a device for forming a thin film on a substrate, first, a first step of forming a predetermined ratio of the film thickness of the thin film, and then forming a film in the first step. A second step of measuring the film thickness distribution of the formed thin film, and further, the film formation rate regulating plate is inserted between the substrate and the film formation source, and the film formation rate is adjusted from the first step. A third step of correcting the film thickness of the thin film while slowing down and inserting the film thickness correction plate between the substrate and the film formation source according to the film thickness distribution measured in the second step. A method for forming a thin film, comprising:
膜厚分布を計測する第２工程を再び行い、その後、前記
基板と前記成膜源との間に、該直前の第３工程より成膜
速度を規制し得る開口部を有する成膜速度規制板を挿着
して、前記直前の第３工程より成膜速度を遅くすると共
に、前記基板と前記成膜源との間に、前記直前の第３工
程後に再び行う前記直前の第２工程で計測した膜厚分布
に応じて膜厚を補正し得る開口部を有する膜厚補正板を
挿着して薄膜の膜厚を補正する現在の第３工程と、該現
在の第３工程において成膜された薄膜の膜厚分布を計測
する現在の第２工程とを、該現在の第２工程により前記
薄膜が所望の膜厚として計測されるまで、同一サイクル
として繰り返して行うことを特徴とする請求項１０に記
載の薄膜の成膜方法。11. The second step of measuring the film thickness distribution of the thin film formed in the third step is performed again, and thereafter, between the substrate and the film forming source, the third step immediately before the third step is performed. A film formation rate regulating plate having an opening capable of regulating the film formation rate is inserted to make the film formation rate slower than in the immediately preceding third step, and between the substrate and the film formation source, Presently, the thickness of a thin film is corrected by inserting a film thickness correction plate having an opening capable of correcting the film thickness in accordance with the film thickness distribution measured in the immediately preceding second process, which is performed again after the immediately preceding third process. And the present second step of measuring the film thickness distribution of the thin film formed in the present third step, the thin film is measured as a desired film thickness by the present second step. 11. The method of forming a thin film according to claim 10, wherein the same cycle is repeated until .
程を、前記第１工程及び前記第３工程と同時に行うこと
を特徴とする請求項１０または１１に記載の薄膜の成膜
方法。12. The method of forming a thin film according to claim 10, wherein the second step is performed simultaneously with the first step and the third step in the same cycle.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001337987A JP4003159B2 (en) | 2001-11-02 | 2001-11-02 | Thin film deposition apparatus and method |
| TW091125257A TWI242602B (en) | 2001-11-02 | 2002-10-25 | Thin film forming apparatus and method |
| US10/284,287 US7033461B2 (en) | 2001-11-02 | 2002-10-31 | Thin film forming apparatus and method |
| CNB021479909A CN100473755C (en) | 2001-11-02 | 2002-11-01 | Film forming equipment and method |
| KR1020020067647A KR100922487B1 (en) | 2001-11-02 | 2002-11-02 | Thin film forming apparatus and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001337987A JP4003159B2 (en) | 2001-11-02 | 2001-11-02 | Thin film deposition apparatus and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003147521A true JP2003147521A (en) | 2003-05-21 |
| JP4003159B2 JP4003159B2 (en) | 2007-11-07 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004137598A (en) * | 2002-09-27 | 2004-05-13 | Matsushita Electric Ind Co Ltd | Film-deposition apparatus and method for exchanging film-control device |
| JP2008533452A (en) * | 2005-03-09 | 2008-08-21 | ライボルト オプティクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Measuring device for optical monitoring of the lamination process |
| JP2012046803A (en) * | 2010-08-27 | 2012-03-08 | Murata Mfg Co Ltd | Sheet-type film deposition apparatus and sheet-type film deposition method |
| CN107587112A (en) * | 2017-10-16 | 2018-01-16 | 新乡市百合光电有限公司 | One kind can adjust netted plated film correcting plate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101790625B1 (en) * | 2015-03-25 | 2017-10-26 | (주)에스엔텍 | Film forming apparatus capable of adjusting forming thickness |
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2001
- 2001-11-02 JP JP2001337987A patent/JP4003159B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004137598A (en) * | 2002-09-27 | 2004-05-13 | Matsushita Electric Ind Co Ltd | Film-deposition apparatus and method for exchanging film-control device |
| JP2008533452A (en) * | 2005-03-09 | 2008-08-21 | ライボルト オプティクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Measuring device for optical monitoring of the lamination process |
| JP4898776B2 (en) * | 2005-03-09 | 2012-03-21 | ライボルト オプティクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Measuring device for optically monitoring a lamination process and method for optically monitoring a lamination process |
| US8184302B2 (en) | 2005-03-09 | 2012-05-22 | Leybold Optics Gmbh | Measuring system for optical monitoring of coating processes |
| JP2012046803A (en) * | 2010-08-27 | 2012-03-08 | Murata Mfg Co Ltd | Sheet-type film deposition apparatus and sheet-type film deposition method |
| CN107587112A (en) * | 2017-10-16 | 2018-01-16 | 新乡市百合光电有限公司 | One kind can adjust netted plated film correcting plate |
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|---|---|
| JP4003159B2 (en) | 2007-11-07 |
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