JP2003110152A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JP2003110152A JP2003110152A JP2001306349A JP2001306349A JP2003110152A JP 2003110152 A JP2003110152 A JP 2003110152A JP 2001306349 A JP2001306349 A JP 2001306349A JP 2001306349 A JP2001306349 A JP 2001306349A JP 2003110152 A JP2003110152 A JP 2003110152A
- Authority
- JP
- Japan
- Prior art keywords
- emitting element
- light emitting
- semiconductor substrate
- electrode
- terminal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は光半導体装置に関
し、より詳細には発光素子の静電耐圧を向上させた光半
導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device, and more particularly to an optical semiconductor device in which the electrostatic breakdown voltage of a light emitting element is improved.
【０００２】[0002]
【従来の技術】窒化ガリウム系発光素子などの発光素子
は静電気などの逆方向過電圧（以下、「サージ」と記す
ことがある）に非常に弱く、比較的小さな静電気によっ
ても素子が破壊されてしまう。このため静電気対策とし
てこれまでから種々の方法が提案されている。代表的な
方法としてはツェナーダイオードを用いる方法がある。
ツェナーダイオードを用いた光半導体装置の縦断面図を
図８に、その回路図を図９に示す。2. Description of the Related Art Light-emitting devices such as gallium nitride-based light-emitting devices are very vulnerable to reverse overvoltage (hereinafter also referred to as "surge") such as static electricity, and the device is destroyed by relatively small static electricity. . Therefore, various methods have been proposed as countermeasures against static electricity. A typical method is to use a Zener diode.
FIG. 8 shows a longitudinal sectional view of an optical semiconductor device using a Zener diode, and FIG. 9 shows a circuit diagram thereof.
【０００３】図８の光半導体装置では、ｎ型半導体基板
６１の一部表面下にｐ型不純物の拡散層６２を形成する
と共に、下面に電極２を形成している。そしてこの拡散
層６２に接触するように第２の端子電極３２を基板６１
上に形成する一方、もう一つの電極である第１の端子電
極３１も基板６１上に形成している。そして、同一面側
に正・負の表面電極４１ａ，４１ｂを有する発光素子
４’を、正・負の表面電極４１ａ，４１ｂが第１の端子
電極３１と第２の端子電極３２とにそれぞれ接続するよ
うに固着している。発光素子４’の駆動電圧は端子Ｔ1
と端子Ｔ2との間に印加される。なお、端子Ｔ1から端子
Ｔ2に電流が流れる方向を順電圧とする。In the optical semiconductor device of FIG. 8, a p-type impurity diffusion layer 62 is formed under a partial surface of an n-type semiconductor substrate 61, and an electrode 2 is formed on the lower surface. Then, the second terminal electrode 32 is attached to the substrate 61 so as to come into contact with the diffusion layer 62.
While being formed on the upper side, the first terminal electrode 31, which is another electrode, is also formed on the substrate 61. Then, the light-emitting element 4'having positive / negative surface electrodes 41a, 41b on the same side is connected to the positive / negative surface electrodes 41a, 41b respectively to the first terminal electrode 31 and the second terminal electrode 32. It is stuck to do so. The driving voltage of the light emitting element 4'is terminal T 1
Is applied between the terminal and the terminal T 2 . The direction in which the current flows from the terminal T 1 to the terminal T 2 is the forward voltage.
【０００４】このような従来の光半導体装置において正
常な順電圧が印加された場合には、ボンディングワイヤ
Ｗａ−下面電極２−基板６１−第１の端子電極３１−発
光素子４’−第２の端子電極３２−ボンディングワイヤ
Ｗｂと電流が流れ発光素子４’が発光する。In such a conventional optical semiconductor device, when a normal forward voltage is applied, the bonding wire Wa-the lower surface electrode 2-the substrate 61-the first terminal electrode 31-the light emitting element 4'-the second. A current flows through the terminal electrode 32-bonding wire Wb and the light emitting element 4 ′ emits light.
【０００５】一方、静電気などにより順方向に過電圧が
印加された場合には、上記電流回路の他、ツェナーダイ
オード（ｎ型半導体基板６１−ｐ型拡散層６２）を介し
て下面電極２から第２の端子電極３２へと流れる新たな
電流回路が形成されるため、過電圧による発光素子の破
壊が防止される。また、静電気などにより逆電圧が印加
された場合には、図９から理解されるように、ボンディ
ングワイヤＷｂ−第２の端子電極３２−ｐ型拡散層６２
−ｎ型半導体基板６１−下面電極２−ボンディングワイ
ヤＷａと電流が流れる。この結果、発光素子４’に電流
は流れず発光素子の破壊が防止される。On the other hand, when an overvoltage is applied in the forward direction due to static electricity or the like, in addition to the current circuit described above, a second Zener diode (n-type semiconductor substrate 61-p-type diffusion layer 62) is used to connect the lower electrode 2 to the second electrode. Since a new current circuit that flows to the terminal electrode 32 is formed, it is possible to prevent the light emitting element from being damaged by an overvoltage. When a reverse voltage is applied due to static electricity or the like, as understood from FIG. 9, the bonding wire Wb-the second terminal electrode 32-p type diffusion layer 62.
-N-type semiconductor substrate 61-Bottom surface electrode 2-Bonding wire Wa and current flow. As a result, current does not flow in the light emitting element 4'and destruction of the light emitting element is prevented.
【０００６】[0006]
【発明が解決しようとする課題】このように、ツェナー
ダイオードを用いれば静電気による発光素子の破壊を有
効に防止できるものの、ツェナーダイオードを形成する
ためには半導体基板の材料に制限を受ける。このため、
発光素子の活性層での発熱を効率的に外部に放散するに
は熱伝導性の高い半導体基板材料を用いるのが望ましい
が、前記のツェナーダイオードを形成するためにこのよ
うな材料を用いることができなかった。また、半導体基
板６１の抵抗成分Ｒ’が発光素子４’と直列接続された
形態をとるので、抵抗成分Ｒ’によって端子Ｔ1から端
子Ｔ2に加える順電圧が高くなってしまう。Thus, although the use of the Zener diode can effectively prevent the destruction of the light emitting element due to static electricity, the material of the semiconductor substrate is limited to form the Zener diode. For this reason,
In order to efficiently dissipate heat generated in the active layer of the light emitting device to the outside, it is desirable to use a semiconductor substrate material having high thermal conductivity, but it is preferable to use such a material for forming the Zener diode. could not. Further, since the resistance component R ′ of the semiconductor substrate 61 is connected in series with the light emitting element 4 ′, the forward voltage applied from the terminal T 1 to the terminal T 2 becomes high due to the resistance component R ′.
【０００７】本発明はこのような従来の問題に鑑みてな
されたものであり、ツェナーダイオードを形成せずに、
順方向に過電圧が印加された場合および逆電圧が印加さ
れた場合であっても発光素子が壊れない光半導体装置を
提供することをその主な目的とするものである。また、
発光素子の保護を行なうための構成によって順方向電圧
が増加することがない光半導体装置を提供することもそ
の目的の１つとするものである。The present invention has been made in view of such conventional problems, and it is possible to form a zener diode without forming a zener diode.
It is a main object of the invention to provide an optical semiconductor device in which a light emitting element is not broken even when an overvoltage is applied in the forward direction and a reverse voltage is applied. Also,
It is also an object of the present invention to provide an optical semiconductor device in which the forward voltage does not increase due to the structure for protecting the light emitting element.
【０００８】[0008]
【課題を解決するための手段】本発明によれば、下面に
電極が形成され半導体基板と、この半導体基板の上面に
形成された端子電極と、異なる面側に正・負の表面電極
を有する発光素子とを備え、前記表面電極のいずれか一
方を前記端子電極に接続し、前記半導体基板の抵抗値を
前記発光素子の作動時抵抗値よりも大きくし、且つ前記
端子電極と接続していない方の発光素子の表面電極と半
導体基板の下面の電極とを同電位とし、前記端子電極と
接続していない方の発光素子の表面電極と、前記端子電
極との間に駆動電圧を印加することを特徴とする光半導
体装置が提供される。According to the present invention, a semiconductor substrate having an electrode formed on the lower surface, a terminal electrode formed on the upper surface of the semiconductor substrate, and positive and negative surface electrodes on different surface sides are provided. A light emitting element, one of the surface electrodes is connected to the terminal electrode, the resistance value of the semiconductor substrate is made larger than the operating resistance value of the light emitting element, and the surface electrode is not connected to the terminal electrode. The surface electrode of the other light emitting element and the electrode on the lower surface of the semiconductor substrate have the same potential, and a drive voltage is applied between the surface electrode of the light emitting element which is not connected to the terminal electrode and the terminal electrode. An optical semiconductor device is provided.
【０００９】また本発明によれば、下面に電極が形成さ
れた半導体基板と、この半導体基板の上面に形成された
第１の端子電極と、同一面側に正・負の表面電極を有す
る発光素子とを備え、前記発光素子の表面電極のいずれ
か一方を第１の端子電極と接続し、前記半導体基板の抵
抗値を前記発光素子の作動時抵抗値よりも大きくし、且
つ第１の端子電極と接続していない方の発光素子の表面
電極と半導体基板の下面の電極とを同電位とし、第１の
端子電極と接続していない方の発光素子の表面電極と、
第１の端子電極との間に駆動電圧を印加することを特徴
とする光半導体装置が提供される。Further, according to the present invention, a semiconductor substrate having an electrode formed on the lower surface thereof, a first terminal electrode formed on the upper surface of the semiconductor substrate, and positive and negative surface electrodes on the same surface side are provided. An element, one of the surface electrodes of the light emitting element is connected to a first terminal electrode, and the resistance value of the semiconductor substrate is larger than the operating resistance value of the light emitting element, and the first terminal The surface electrode of the light emitting element that is not connected to the electrode and the electrode on the lower surface of the semiconductor substrate have the same potential, and the surface electrode of the light emitting element that is not connected to the first terminal electrode,
An optical semiconductor device is provided which is characterized in that a driving voltage is applied between the first terminal electrode and the first terminal electrode.
【００１０】ここで、前記半導体基板の上面に絶縁層を
介して第２の端子電極を形成し、前記発光素子の正・負
の表面電極を第１の端子電極と第２の端子電極とに接続
し、第１の端子電極と第２の端子電極との間に駆動電圧
を印可する構成としてもよい。Here, a second terminal electrode is formed on the upper surface of the semiconductor substrate via an insulating layer, and the positive and negative surface electrodes of the light emitting element are used as the first terminal electrode and the second terminal electrode. Alternatively, the driving voltage may be applied between the first terminal electrode and the second terminal electrode by connecting them.
【００１１】本発明の光半導体素子には発光素子として
窒化ガリウム系発光素子が好適に用いられる。またサー
ジによる発光素子の破壊を一層確実に防止する観点から
は、半導体基板の抵抗値は５０〜１５，０００Ωの範囲
とするのが好ましい。A gallium nitride-based light emitting device is preferably used as a light emitting device in the optical semiconductor device of the present invention. Further, from the viewpoint of more surely preventing the destruction of the light emitting element due to the surge, the resistance value of the semiconductor substrate is preferably in the range of 50 to 15,000Ω.
【００１２】[0012]
【発明の実施の形態】本発明者等は、ツェナーダイオー
ドを用いずに静電気による発光素子の破壊を防ぐことが
できないか鋭意検討を重ねた結果、半導体基板の抵抗を
発光素子との関係において特定値とすることにより、正
常な順電圧が印加された場合には発光素子に電流が流れ
る一方、順方向に過電圧印加された場合には発光素子の
みならず半導体基板にも電流が流れ、また逆電圧が印加
された場合には半導体基板に電流が流れて発光素子の破
壊が防止できることを見出し本発明をなすに至った。す
なわち、本発明の大きな特徴の一つは、半導体基板の抵
抗値を発光素子の作動時抵抗よりも大きくしたことにあ
る。そしてもう一つの大きな特徴は、半導体基板上に形
成された端子電極と接続していない方の発光素子の表面
電極と、半導体基板の下面電極とを同電位としたことに
ある。このような構成により、本発明の光半導体装置で
は正常な順電圧が印加された場合には発光素子が発光
し、順方向に過電圧が印加された場合および逆電圧が印
加された場合には半導体基板を電流が流れ発光素子の破
壊が防止される。以下、図に基づいて本発明の光半導体
装置について説明する。DETAILED DESCRIPTION OF THE INVENTION The inventors of the present invention have made extensive studies as to whether or not damage to a light emitting element due to static electricity can be prevented without using a Zener diode. As a result, the resistance of a semiconductor substrate is specified in relation to the light emitting element. By setting this value, current will flow to the light emitting element when a normal forward voltage is applied, while current will flow not only to the light emitting element but also to the semiconductor substrate when an overvoltage is applied in the forward direction, and vice versa. The inventors have found that when a voltage is applied, a current flows through the semiconductor substrate and the destruction of the light emitting element can be prevented, and the present invention has been completed. That is, one of the major features of the present invention is that the resistance value of the semiconductor substrate is made larger than the operating resistance of the light emitting element. Another major feature is that the surface electrode of the light emitting element which is not connected to the terminal electrode formed on the semiconductor substrate and the lower surface electrode of the semiconductor substrate have the same potential. With such a configuration, in the optical semiconductor device of the present invention, the light emitting element emits light when a normal forward voltage is applied, and when the overvoltage is applied in the forward direction and the reverse voltage is applied, the semiconductor A current flows through the substrate to prevent the light emitting element from being destroyed. The optical semiconductor device of the present invention will be described below with reference to the drawings.
【００１３】図１は、第１の発明に係る光半導体装置の
一例を示す縦断面図である。図１の光半導体装置は、下
面電極２を備えた半導体基板１の上面に端子電極３が形
成され、この端子電極３上に、上・下面に負・正の表面
電極４１ａ，４１ｂが形成された発光素子４が導電性接
着剤Ｂで固着されている。そして、発光素子４の上面に
形成された表面電極４１ｂと半導体基板１の下面電極２
とは配線Ｗｂ，Ｗｃにより同電位とされている。なお、
半導体基板１の抵抗値は発光素子４の作動時抵抗値より
も大きく設定されている。FIG. 1 is a vertical sectional view showing an example of an optical semiconductor device according to the first invention. In the optical semiconductor device of FIG. 1, a terminal electrode 3 is formed on the upper surface of a semiconductor substrate 1 having a lower surface electrode 2, and negative and positive surface electrodes 41a and 41b are formed on the upper and lower surfaces of the terminal electrode 3. The light emitting element 4 is fixed with a conductive adhesive B. Then, the surface electrode 41 b formed on the upper surface of the light emitting element 4 and the lower surface electrode 2 of the semiconductor substrate 1
And have the same potential by the wirings Wb and Wc. In addition,
The resistance value of the semiconductor substrate 1 is set to be larger than the operation resistance value of the light emitting element 4.
【００１４】このような構成の光半導体装置では２つの
電流通過回路が形成される。一つは配線Ｗａ−端子電極
３−表面電極４１ａ−発光素子４−表面電極４１ｂ−配
線Ｗｂと流れる第１電流通過回路である。もう一つは、
配線Ｗａ−端子電極３−半導体基板１−下面電極２−配
線Ｗｃと流れる第２電流通過回路である。回路的には、
発光素子４に半導体基板１（その抵抗値Ｒ）が並列接続
された形態をとる。In the optical semiconductor device having such a structure, two current passing circuits are formed. One is a first current passage circuit that flows through the wiring Wa-the terminal electrode 3-the surface electrode 41a-the light emitting element 4-the surface electrode 41b-the wiring Wb. the other one is,
It is a second current passing circuit that flows through the wiring Wa-terminal electrode 3-semiconductor substrate 1-lower surface electrode 2-wiring Wc. In terms of circuit,
The semiconductor substrate 1 (its resistance value R) is connected in parallel to the light emitting element 4.
【００１５】ここで端子Ｔ1をプラス側、端子Ｔ2をマイ
ナス側としてこの間に発光素子の駆動電圧が印加された
場合には、半導体基板１の抵抗値が発光素子４の作動時
抵抗値よりも大きいため、第１電流通過回路に電流が流
れて発光素子４が発光する。発光素子４に半導体基板１
が並列接続されているため、基板１によって発光素子４
の駆動電圧が上昇することは防止される。Here, when the driving voltage of the light emitting element is applied with the terminal T 1 on the positive side and the terminal T 2 on the negative side during this period, the resistance value of the semiconductor substrate 1 is higher than the operating resistance value of the light emitting element 4. Is also large, a current flows through the first current passing circuit and the light emitting element 4 emits light. Semiconductor substrate 1 for light emitting element 4
Are connected in parallel, the light emitting element 4
Driving voltage is prevented from rising.
【００１６】これに対して逆電圧が印加された場合、す
なわち端子Ｔ1をマイナス側、端子Ｔ2をプラス側として
電圧が印加された場合には、半導体基板１の抵抗に比べ
て発光素子４の抵抗が格段に高いため第２電流通過回路
に電流が流れる。これにより発光素子の破壊が防止され
るのである。また、半導体基板１の抵抗を選択すること
により順方向に過電圧が印加された場合に、発光素子４
のみならず半導体基板１へも電流を流すことができ発光
素子４の破壊を防止できる。On the other hand, when a reverse voltage is applied, that is, when a voltage is applied with the terminal T 1 on the minus side and the terminal T 2 on the plus side, the light emitting element 4 is higher than the resistance of the semiconductor substrate 1. Since the resistance of is extremely high, current flows through the second current passing circuit. This prevents the light emitting element from being destroyed. Further, when an overvoltage is applied in the forward direction by selecting the resistance of the semiconductor substrate 1, the light emitting element 4
Not only can a current be applied to the semiconductor substrate 1, it is possible to prevent the light emitting element 4 from being destroyed.
【００１７】半導体基板１の抵抗値Ｒは下記式（１）か
ら算出できるから、端子電極３が半導体基板１に直接接
触している面積Ｓおよび半導体基板１の厚さｄ、半導体
基板１の抵抗率ｋを変えることにより（図１を参照）、
発光素子４の作動時抵抗値よりも大きくなるように半導
体基板１の抵抗値Ｒを調整すればよい。Since the resistance value R of the semiconductor substrate 1 can be calculated from the following equation (1), the area S in which the terminal electrode 3 is in direct contact with the semiconductor substrate 1, the thickness d of the semiconductor substrate 1, the resistance of the semiconductor substrate 1 By changing the rate k (see Figure 1),
The resistance value R of the semiconductor substrate 1 may be adjusted so as to be larger than the resistance value of the light emitting element 4 during operation.
【００１８】Ｒ＝ｋ×（ｄ／Ｓ）・・・・・・（１）
光半導体装置における半導体基板の抵抗値Ｒと発光素子
の静電耐圧との関係の一例を図２に示す。抵抗値Ｒを１
６，０００Ω程度とした場合、静電耐圧は約１１０Ｖ程
度（図のＡ群）、抵抗値Ｒを５，０００Ω程度とした場
合、静電耐圧は約１７０Ｖ前後となる（図のＢ群）。こ
の図から半導体基板の抵抗値Ｒを小さくすると静電耐圧
が大きくなることがわかる。発光素子の種類にもよるが
一般に発光素子の静電耐圧としては１２０Ｖ以上が望ま
れることから、抵抗値Ｒの上限値としては１５，０００
Ωが好ましい。一方、抵抗値Ｒが発光素子の作動時抵抗
値よりも小さいと、前記の第２電流通過回路を流れる電
流が大きくなり発光素子が発光しなくなるからその下限
値は５０Ωが好ましい。R = k × (d / S) (1) An example of the relationship between the resistance value R of the semiconductor substrate and the electrostatic breakdown voltage of the light emitting element in the optical semiconductor device is shown in FIG. Resistance value 1
When it is set to about 6,000Ω, the electrostatic breakdown voltage is about 110V (group A in the figure), and when the resistance value R is set to about 5,000Ω, the electrostatic breakdown voltage is about 170V (group B in the figure). From this figure, it can be seen that the electrostatic breakdown voltage increases as the resistance value R of the semiconductor substrate decreases. Although it is generally desired that the electrostatic breakdown voltage of the light emitting element is 120 V or more, depending on the type of the light emitting element, the upper limit value of the resistance value R is 15,000.
Ω is preferred. On the other hand, when the resistance value R is smaller than the operating resistance value of the light emitting element, the current flowing through the second current passing circuit increases and the light emitting element does not emit light. Therefore, the lower limit value is preferably 50Ω.
【００１９】次に、第２の発明に係る光半導体装置につ
いて説明する。第２の発明に係る光半導体装置の第１の
発明に係る光半導体装置と異なる点は、第２の発明に係
る光半導体装置では、同一面側に正・負の表面電極を有
する発光素子を用いる点にある。そこでまず、同一面側
に正・負の表面電極を有する発光素子の一例として窒化
ガリウム系発光素子の構造を図３に示す。図３の発光素
子４’は、サファイヤ基板４２の上に、ＧａＮバッファ
層４３、ｎ型窒化ガリウム系化合物半導体層４４、ｎ型
Ｇａ１−ｙＡｌｙＮクラッド層（０＜ｙ＜１）４５、ｎ
型ＩｎｚＧａ１−ｚＮ（０＜ｚ＜１）活性層４６、Ｍｇ
ドープｐ型Ｇａ１−ｘＡｌｘＮ（０＜ｘ＜０．５）クラ
ッド層４７、Ｍｇドープｐ型ＧａＮコンタクト層４８が
順に積層された構造を有し、ｎ型窒化ガリウム系化合物
半導体層４４及びＭｇドープｐ型ＧａＮコンタクト層４
８の表面にそれぞれＡｌ及びＡｕからなる表面電極４１
ａ，４１ｂが形成されている。Next, an optical semiconductor device according to the second invention will be described. The optical semiconductor device according to the second invention is different from the optical semiconductor device according to the first invention in that the optical semiconductor device according to the second invention includes a light emitting element having positive and negative surface electrodes on the same surface side. There is a point to use. Therefore, first, FIG. 3 shows a structure of a gallium nitride-based light emitting device as an example of a light emitting device having positive and negative surface electrodes on the same surface side. 3 includes a GaN buffer layer 43, an n-type gallium nitride-based compound semiconductor layer 44, an n-type Ga1-yAlyN cladding layer (0 <y <1) 45, n on a sapphire substrate 42.
Type InzGa1-zN (0 <z <1) active layer 46, Mg
It has a structure in which a doped p-type Ga1-xAlxN (0 <x <0.5) cladding layer 47 and a Mg-doped p-type GaN contact layer 48 are sequentially stacked, and includes an n-type gallium nitride-based compound semiconductor layer 44 and a Mg-doped p-type. -Type GaN contact layer 4
Surface electrodes 41 made of Al and Au respectively on the surface of No. 8
a and 41b are formed.
【００２０】このような窒化ガリウム系発光素子４’は
例えば次のようにして作製される。サファイヤ基板４２
を洗浄した後反応器内に配設し、キャリアガスとして水
素、原料ガスとしてアンモニアとトリメチルガリウム
（ＴＭＧ）を反応器内に供給し５１０℃の成長温度でサ
ファイア基板４２上にＧａＮ層４３を約２００Åまで成
長させる。次に、ＴＭＧの供給を止めて１０３０℃まで
昇温した後、ＴＭＧとアンモニアガスを供給すると同時
にドーパントガスとしてシランガスを供給し、Ｓｉをド
ープしたｎ型ＧａＮ層４４を４μｍ程度成長させる。次
に、原料ガスとしてＴＭＧとトリメチルアルミニウム
（ＴＭＡ）、アンモニアとを用い、ドーパントガスとし
てシランガスを反応器内に供給し８００℃の成長温度で
Ｓｉドープｎ型Ｇａ0.86Ａｌ0.14Ｎ層４５を０．１５μ
ｍまで成長させる。そして、原料ガス及びドーパントガ
スの供給を止めて、キャリアガスを窒素に切替えた後、
原料ガスとしてＴＭＧとトリメチルインジウム（ＴＭ
Ｉ）、アンモニアとを用い、ドーパントガスとしてシラ
ンガスを用いて、Ｓｉドープｎ型Ｉｎ0.01Ｇａ0.99Ｎ層
４６を１００Åまで成長させる。Such a gallium nitride-based light emitting device 4'is manufactured, for example, as follows. Sapphire substrate 42
After cleaning the GaN layer 43 in the reactor, hydrogen as a carrier gas, ammonia and trimethylgallium (TMG) as a source gas are supplied into the reactor, and a GaN layer 43 is formed on the sapphire substrate 42 at a growth temperature of 510 ° C. Grow to 200Å. Next, after stopping the supply of TMG and raising the temperature to 1030 ° C., TMG and ammonia gas are supplied, and at the same time, silane gas is supplied as a dopant gas to grow the Si-doped n-type GaN layer 44 by about 4 μm. Next, TMG, trimethylaluminum (TMA), and ammonia were used as source gases, and silane gas was supplied as a dopant gas into the reactor, and the Si-doped n-type Ga 0.86 Al 0.14 N layer 45 was formed at a growth temperature of 800 ° C. 15μ
Grow to m. Then, after stopping the supply of the raw material gas and the dopant gas and switching the carrier gas to nitrogen,
TMG and trimethylindium (TM) as source gas
I), using ammonia and silane gas as a dopant gas, the Si-doped n-type In 0.01 Ga 0.99 N layer 46 is grown to 100 Å.
【００２１】次に、原料ガスとドーパントガスの供給を
止めて１０２０℃まで昇温した後、原料ガスとしてＴＭ
ＧとＴＭＡ、アンモニアを用い、ドーパントガスとして
Ｃｐ２Ｍｇを用いて、ｐ型Ｇａ0.86Ａｌ0.14Ｎクラッド
層４７を０．１５μｍまで成長させる。そして、ＴＭＡ
の供給を止めてＭｇドープｐ型ＧａＮコンタクト層４８
を０．４μｍまで成長させる。Next, after stopping the supply of the raw material gas and the dopant gas and raising the temperature to 1020 ° C., TM is used as the raw material gas.
A p-type Ga 0.86 Al 0.14 N cladding layer 47 is grown to 0.15 μm using G, TMA, and ammonia, and Cp2Mg as a dopant gas. And TMA
Of the Mg-doped p-type GaN contact layer 48
Are grown to 0.4 μm.
【００２２】その後、作製したウエハを反応容器から取
りだし、アニーリング装置で窒素雰囲気下７００℃で２
０分間アニーリングを行い、ｐ型Ｇａ0.86Ａｌ0.14Ｎク
ラッド層４５とｐ型ＧａＮコンタクト層４８の低抵抗化
を行う。そして、このウエハの片側をエッチングして図
３のようにｎ型ＧａＮ層４４を露出させ、ｎ型ＧａＮ層
４４の表面にはＡｌ電極４１ｂ、ｐ型ＧａＮコンタクト
層４８の表面にはＡｕ電極４１ａを形成し、５００℃で
再度アニーリングを行い電極４１ａ，４１ｂと前記層４
８，４４とをなじませる。そして最後に５００μｍ×５
００μｍに分割して発光素子４’としていた。After that, the produced wafer is taken out from the reaction vessel, and is annealed at 700 ° C. for 2 hours in a nitrogen atmosphere.
Annealing is performed for 0 minutes to reduce the resistance of the p-type Ga 0.86 Al 0.14 N cladding layer 45 and the p-type GaN contact layer 48. Then, one side of this wafer is etched to expose the n-type GaN layer 44 as shown in FIG. 3, the Al electrode 41b is on the surface of the n-type GaN layer 44, and the Au electrode 41a is on the surface of the p-type GaN contact layer 48. And then annealing again at 500 ° C. to form the electrodes 41a and 41b and the layer 4
Blend in with 8,44. And finally 500μm × 5
It was divided into 00 μm to form a light emitting element 4 ′.
【００２３】次に、このような発光素子４’を用いた光
半導体装置の一例を示す縦断面図を図４に示す。図４の
光半導体装置では、下面電極２を有する半導体基板１
（材料：ＳｉＣ、抵抗率ｋ：０．４Ω・ｃｍ、厚さｄ：
２００μｍ）の表面に、端子電極３１が形成されている
と共に、正・負の表面電極４１ａ，４１ｂが上面に形成
された発光素子４’が固着されている。そして端子電極
３１と表面電極４１ｂとは配線Ｗｄで接続され、もう一
つの表面電極４１ａと半導体基板１の下面電極２とは配
線Ｗｂ、Ｗｃにより同電位とされている。また、半導体
基板１の抵抗値Ｒは発光素子４’の作動時抵抗値よりも
大きく設定されている。Next, FIG. 4 is a longitudinal sectional view showing an example of an optical semiconductor device using such a light emitting element 4 '. In the optical semiconductor device of FIG. 4, the semiconductor substrate 1 having the lower surface electrode 2 is provided.
(Material: SiC, resistivity k: 0.4 Ω · cm, thickness d:
The terminal electrode 31 is formed on the surface of 200 μm), and the light emitting element 4 ′ having the positive / negative surface electrodes 41a and 41b formed on the upper surface is fixed. The terminal electrode 31 and the surface electrode 41b are connected by a wiring Wd, and the other surface electrode 41a and the lower surface electrode 2 of the semiconductor substrate 1 are made to have the same potential by the wirings Wb and Wc. Further, the resistance value R of the semiconductor substrate 1 is set to be larger than the operating resistance value of the light emitting element 4 '.
【００２４】このような構成の光半導体装置における電
流通過回路は、前記と同様に２つあり、その一つは配線
Ｗａ−端子電極３１−配線Ｗｄ−表面電極４１ｂ−発光
素子４’−表面電極４１ａ−配線Ｗｂと流れる第１電流
通過回路である。もう一つは、配線Ｗａ−端子電極３１
−半導体基板１−下面電極２−配線Ｗｃと流れる第２電
流通過回路である。回路的には、発光素子４’に半導体
基板１（その抵抗値Ｒ）が並列接続された形態をとる。There are two current passing circuits in the optical semiconductor device having such a structure as described above, and one of them is wiring Wa-terminal electrode 31-wiring Wd-surface electrode 41b-light emitting element 4'-surface electrode. 41a-a first current passage circuit that flows with the wiring Wb. The other is the wiring Wa-terminal electrode 31.
-Semiconductor substrate 1-lower surface electrode 2-wiring Wc and second current passing circuit. In terms of a circuit, the semiconductor substrate 1 (its resistance value R) is connected in parallel to the light emitting element 4 '.
【００２５】ここで端子Ｔ1をプラス側、端子Ｔ2をマイ
ナス側としてこの間に発光素子４’の駆動電圧が印加さ
れた場合には、半導体基板１の抵抗値Ｒが発光素子４’
の作動時抵抗値よりも大きいため、第１電流通過回路に
電流が流れ発光素子４’が発光する。発光素子４’に半
導体基板１が並列接続されているため、基板１によって
発光素子４’の駆動電圧が上昇することは防止される。Here, when the driving voltage of the light emitting element 4'is applied between the terminals T 1 on the positive side and the terminals T 2 on the negative side, the resistance value R of the semiconductor substrate 1 changes to the light emitting element 4 '.
Since the resistance value is larger than the operating resistance value, the current flows through the first current passing circuit and the light emitting element 4 ′ emits light. Since the semiconductor substrate 1 is connected in parallel to the light emitting element 4 ', the substrate 1 prevents the drive voltage of the light emitting element 4'from rising.
【００２６】これに対して逆電圧が印加された場合、す
なわち端子Ｔ1をマイナス側、端子Ｔ2をプラス側として
電圧が印加された場合には、半導体基板１の抵抗に比べ
て発光素子４’の抵抗が格段に高いため第２電流通過回
路に電流が流れ、これにより発光素子４’の破壊が防止
される。また、半導体基板１の抵抗を選択することによ
り順方向に過電圧が印加された場合に、発光素子４のみ
ならず半導体基板１へも電流を流すことができ発光素子
４’の破壊を防止できる。On the other hand, when a reverse voltage is applied, that is, when a voltage is applied with the terminal T 1 on the minus side and the terminal T 2 on the plus side, the light emitting element 4 is higher than the resistance of the semiconductor substrate 1. Since the resistance of'is extremely high, a current flows through the second current passage circuit, which prevents the light emitting element 4'from being destroyed. Further, by selecting the resistance of the semiconductor substrate 1, when an overvoltage is applied in the forward direction, a current can be passed not only to the light emitting element 4 but also to the semiconductor substrate 1 and the light emitting element 4'can be prevented from being destroyed.
【００２７】第２の発明に係る光半導体装置の他の例を
示す縦断面図を図５に示す。図５の光半導体装置は、下
面電極２を有する半導体基板１（材料：ｎ−Ｓｉ、抵抗
率ｋ：０．４Ω・ｃｍ、厚さｄ：２００μｍ）の表面に
２つの端子電極３１，３２が形成されている。一方の端
子電極（第１の端子電極）３１は半導体基板１表面に直
接形成され、もう一方の端子電極（第２の端子電極）３
２は絶縁層５を介して半導体基板１上に形成されてい
る。そして、図３の発光素子４’を上下反対にして、発
光素子４’の２つの表面電極４１ａ，４１ｂをそれぞれ
第１の端子電極３１と第２の端子電極３２の上に位置さ
せて導電性接着剤Ｂで固着している。また、第１の端子
電極３１および第２の端子電極３２上の発光素子４’に
よって覆われない露出部分に電源からの配線Ｗａ，Ｗｂ
がそれぞれ接続され、また表面電極４１ｂと下面電極２
とは配線Ｗｂ、Ｗｃにより同電位とされている。そして
また、半導体基板１の抵抗値Ｒは発光素子４’の作動時
抵抗値よりも大きく設定されている（この例ではＲ＝２
７０Ω）。FIG. 5 is a vertical sectional view showing another example of the optical semiconductor device according to the second invention. In the optical semiconductor device of FIG. 5, two terminal electrodes 31 and 32 are provided on the surface of a semiconductor substrate 1 (material: n-Si, resistivity k: 0.4 Ω · cm, thickness d: 200 μm) having a bottom electrode 2. Has been formed. One terminal electrode (first terminal electrode) 31 is formed directly on the surface of the semiconductor substrate 1, and the other terminal electrode (second terminal electrode) 3
2 is formed on the semiconductor substrate 1 via the insulating layer 5. Then, the light emitting element 4 ′ of FIG. 3 is turned upside down, and the two surface electrodes 41a and 41b of the light emitting element 4 ′ are positioned above the first terminal electrode 31 and the second terminal electrode 32, respectively. It is fixed with adhesive B. In addition, wirings Wa and Wb from the power source are provided on the exposed portions of the first terminal electrode 31 and the second terminal electrode 32 which are not covered by the light emitting element 4 ′.
Are respectively connected to each other, and the front surface electrode 41b and the lower surface electrode 2 are connected.
And have the same potential by the wirings Wb and Wc. Further, the resistance value R of the semiconductor substrate 1 is set larger than the operating resistance value of the light emitting element 4 '(R = 2 in this example).
70Ω).
【００２８】このような構成の光半導体装置における電
流通過回路は、前記と同様に２つあり、その一つは配線
Ｗａ−第１の端子電極３１−表面電極４１ａ−発光素子
４’−表面電極４１ｂ−第２の端子電極３２−配線Ｗｂ
と流れる第１電流通過回路である。もう一つは、配線Ｗ
ａ−端子電極３１−半導体基板１−下面電極２−配線Ｗ
ｃと流れる第２電流通過回路である。回路的には、発光
素子４’に半導体基板１（その抵抗値Ｒ）が並列接続さ
れた形態をとる。There are two current passing circuits in the optical semiconductor device having such a structure as described above, and one of them is a wiring Wa-first terminal electrode 31-surface electrode 41a-light emitting element 4'-surface electrode. 41b-second terminal electrode 32-wiring Wb
Is a first current passing circuit that flows. The other is wiring W
a-terminal electrode 31-semiconductor substrate 1-bottom surface electrode 2-wiring W
It is the 2nd electric current passage circuit which flows with c. In terms of a circuit, the semiconductor substrate 1 (its resistance value R) is connected in parallel to the light emitting element 4 '.
【００２９】そして、前記と同様にして、この光半導体
装置に順電圧を印加すると、半導体基板１の抵抗値Ｒが
発光素子４’の作動時抵抗値よりも大きいため、第１電
流通過回路に電流が流れ発光素子４’が発光する。発光
素子４’に半導体基板１が並列接続されているため、基
板１によって発光素子４’の駆動電圧が上昇することは
防止される。When a forward voltage is applied to this optical semiconductor device in the same manner as described above, the resistance value R of the semiconductor substrate 1 is larger than the operating resistance value of the light emitting element 4 '. A current flows and the light emitting element 4 ′ emits light. Since the semiconductor substrate 1 is connected in parallel to the light emitting element 4 ', the substrate 1 prevents the drive voltage of the light emitting element 4'from rising.
【００３０】一方、逆電圧を印加すると、半導体基板１
の抵抗に比べて発光素子４’の抵抗が格段に高いため第
２電流通過回路に電流が流れ、これにより発光素子４’
の破壊が防止される。また、半導体基板１の抵抗を選択
することにより順方向に過電圧が印加された場合に、発
光素子４’のみならず半導体基板１へも電流を流すこと
ができ発光素子４の破壊を防止できる。On the other hand, when a reverse voltage is applied, the semiconductor substrate 1
Since the resistance of the light emitting element 4'is much higher than that of the light emitting element 4 ', a current flows through the second current passing circuit, which causes the light emitting element 4'.
Is prevented from being destroyed. Further, by selecting the resistance of the semiconductor substrate 1, when an overvoltage is applied in the forward direction, a current can flow not only to the light emitting element 4 ′ but also to the semiconductor substrate 1 and the light emitting element 4 can be prevented from being destroyed.
【００３１】次に、第２の発明に係る光半導体装置を発
光装置に実装した場合の形態を説明する。図６は、図４
に示した光半導体装置Ｍを半導体レーザ装置に実装した
場合の斜視図である。光半導体装置Ｍは、その下面電極
２（図４に図示）と主リード８１とが導通可能に主リー
ド８１の先端部分に導電性接着剤で固着されている。ま
た、主リード８１に対して垂直方向に形成された、主リ
ード８１と導通し且つ副リード８２，８３とは絶縁の側
壁９には、発光素子４’からの光を受光できる位置に受
光素子７が設けられている。そして主リード８１の左右
には副リード８２，８３が軸方向に平行して設けられて
いる。Next, a mode in which the optical semiconductor device according to the second invention is mounted on a light emitting device will be described. FIG. 6 shows FIG.
FIG. 6 is a perspective view when the optical semiconductor device M shown in FIG. In the optical semiconductor device M, the lower surface electrode 2 (shown in FIG. 4) and the main lead 81 are fixed to the tip end portion of the main lead 81 with a conductive adhesive so that the main lead 81 can be conducted. Further, the side wall 9 formed in the direction perpendicular to the main lead 81 and electrically connected to the main lead 81 and insulated from the sub leads 82 and 83 has a light receiving element at a position where light from the light emitting element 4'can be received. 7 is provided. Sub leads 82 and 83 are provided on the left and right of the main lead 81 in parallel with the axial direction.
【００３２】副リード８２と端子電極３１とはボンディ
ングワイヤＷａで接続され、端子電極３１と表面電極４
１ｂとはボンディングワイヤＷｄで、表面電極４１ａと
主リード８１とはボンディングワイヤＷｂでそれぞれ接
続されている。また、受光素子７と副リード８３とはボ
ンディングワイヤＷｅで接続されている。そして、光半
導体装置Ｍや受光素子７、各ボンディングワイヤを含め
た、側壁９から先端側はエポキシ樹脂などの透光性樹脂
Ｒで封止されている。もちろん側壁９から先端側が透光
性樹脂Ｒで封止されていなくても構わない。The sub lead 82 and the terminal electrode 31 are connected by a bonding wire Wa, and the terminal electrode 31 and the surface electrode 4 are connected.
1b is a bonding wire Wd, and the surface electrode 41a and the main lead 81 are connected by a bonding wire Wb. Further, the light receiving element 7 and the sub lead 83 are connected by a bonding wire We. Then, from the side wall 9 including the optical semiconductor device M, the light receiving element 7, and the bonding wires, the tip side is sealed with a light transmitting resin R such as an epoxy resin. Needless to say, the tip side from the side wall 9 may not be sealed with the transparent resin R.
【００３３】このような構造の半導体レーザ装置におい
て、主リード８１と副リード８２の間に順方向に所定の
電流又は所定のレーザ駆動電圧を与えた場合には、主リ
ード８１−ボンディングワイヤＷｂ−表面電極４１ａ−
半導体レーザ素子４’−表面電極４１ｂ−ボンディング
ワイヤＷｄ−端子電極３１−ボンディングワイヤＷａ−
副リード８２と流れ、半導体レーザ素子４’が発振し、
レーザ光がＸ方向に出射される。そして出射された光を
受光素子７が検知すると、主リード８１と副リード８３
間に電流が流れ、この電流値を基に半導体レーザ素子
４’の光出力が一定になるように電圧が制御される。In the semiconductor laser device having such a structure, when a predetermined current or a predetermined laser driving voltage is applied in the forward direction between the main lead 81 and the sub lead 82, the main lead 81-bonding wire Wb- Surface electrode 41a-
Semiconductor laser element 4'-surface electrode 41b-bonding wire Wd-terminal electrode 31-bonding wire Wa-
The semiconductor laser element 4 ′ oscillates by flowing with the sub lead 82,
Laser light is emitted in the X direction. When the light receiving element 7 detects the emitted light, the main lead 81 and the sub lead 83
A current flows in the meantime, and the voltage is controlled based on this current value so that the optical output of the semiconductor laser device 4 ′ becomes constant.
【００３４】一方、静電気などによって主リード８１と
副リード８２の間に逆方向に電圧が加わった場合には、
副リード８２−ボンディングワイヤＷａ−端子電極３１
−半導体基板１−下面電極２−主リード８１と流れ、静
電気による半導体レーザ素子４’の破壊が回避される。On the other hand, when a voltage is applied in the opposite direction between the main lead 81 and the sub lead 82 due to static electricity,
Sub lead 82-bonding wire Wa-terminal electrode 31
-Semiconductor substrate 1-lower surface electrode 2-main lead 81, and the semiconductor laser element 4'is prevented from being damaged by static electricity.
【００３５】さらに、第２の発明に係る光半導体装置を
発光装置に実装した他の形態を図７に示す。図７は、図
５に示した光半導体装置Ｍ’をリード型発光ダイオード
装置に実装した場合の縦断面図である。リード８４の上
端に、その下面電極とリードとが導通可能に導電性接着
剤で光半導体装置Ｍ’が固着されている。そして、リー
ド８４と第１の端子電極３１とはボンディングワイヤＷ
ａで接続され、第２の端子電極３２とリード８５とはボ
ンディングワイヤＷｂで接続されている。光半導体装置
Ｍ’と各ボンディングワイヤ、リード８４，８５の上部
は透光性樹脂Ｒで封止されている。FIG. 7 shows another embodiment in which the optical semiconductor device according to the second invention is mounted on a light emitting device. FIG. 7 is a vertical cross-sectional view when the optical semiconductor device M ′ shown in FIG. 5 is mounted on a lead type light emitting diode device. An optical semiconductor device M ′ is fixed to the upper end of the lead 84 with a conductive adhesive so that the lower surface electrode and the lead can be electrically connected. The lead 84 and the first terminal electrode 31 are bonded to each other by the bonding wire W.
The second terminal electrode 32 and the lead 85 are connected by a bonding wire Wb. The optical semiconductor device M ′, the bonding wires, and the upper portions of the leads 84 and 85 are sealed with a transparent resin R.
【００３６】このような電極間配線において、リード８
４，８５の間に順方向に所定の電流又は所定のレーザ駆
動電圧を与えた場合には、リード８４−ボンディングワ
イヤＷａ−第１の端子電極３１−発光素子４’−第２の
端子電極３２−ボンディングワイヤＷｂ−リード８５と
流れ、発光素子４’が発光する。一方、静電気などによ
ってリード８４，８５の間に逆方向に電圧が加わった場
合には、リード８５−端子電極３２−半導体基板１−下
面電極２−リード８４と流れ、静電気による発光素子
４’の破壊が回避される。In such inter-electrode wiring, the lead 8
When a predetermined current or a predetermined laser drive voltage is applied in the forward direction between Nos. 4 and 85, the lead 84-bonding wire Wa-first terminal electrode 31-light emitting element 4'-second terminal electrode 32. -Bonding wire Wb-Flows with the lead 85, and the light emitting element 4'emits light. On the other hand, when a voltage is applied between the leads 84 and 85 in the opposite direction due to static electricity or the like, the current flows through the lead 85-terminal electrode 32-semiconductor substrate 1-bottom electrode 2-lead 84, and the light-emitting element 4'is caused by static electricity. Destruction is avoided.
【００３７】[0037]
【発明の効果】第１の発明に係る光半導体装置では、下
面に電極が形成され半導体基板と、この半導体基板の上
面に形成された端子電極と、異なる面側に正・負の表面
電極を有する発光素子とを備え、表面電極のいずれか一
方を端子電極に接続し、半導体基板の抵抗値を発光素子
の作動時抵抗値よりも大きくし、且つ端子電極と接続し
ていない方の発光素子の表面電極と半導体基板の下面の
電極とを同電位とし、端子電極と接続していない方の発
光素子の表面電極と、端子電極との間に駆動電圧を印加
する構成としたので、半導体基板の材料に特に制限を受
けることなく、過電圧および逆電圧による発光素子の破
壊を有効に防止できる。In the optical semiconductor device according to the first aspect of the present invention, a semiconductor substrate having an electrode formed on the lower surface, a terminal electrode formed on the upper surface of the semiconductor substrate, and positive and negative surface electrodes on different surface sides are provided. A light emitting element having one of the surface electrodes connected to the terminal electrode, the resistance value of the semiconductor substrate being larger than the operating resistance value of the light emitting element, and not connected to the terminal electrode. Since the surface electrode of the semiconductor substrate and the electrode on the lower surface of the semiconductor substrate have the same potential, and the drive voltage is applied between the terminal electrode and the surface electrode of the light emitting element which is not connected to the terminal electrode, the semiconductor substrate It is possible to effectively prevent destruction of the light emitting element due to overvoltage and reverse voltage, without being particularly limited by the material.
【００３８】また第２の発明に係る光半導体装置では、
下面に電極が形成された半導体基板と、この半導体基板
の上面に形成された第１の端子電極と、同一面側に正・
負の表面電極を有する発光素子とを備え、発光素子の表
面電極のいずれか一方を第１の端子電極と接続し、半導
体基板の抵抗値を発光素子の作動時抵抗値よりも大きく
し、且つ第１の端子電極と接続していない方の発光素子
の表面電極と半導体基板の下面の電極とを同電位とし、
第１の端子電極と接続していない方の発光素子の表面電
極と、第１の端子電極との間に駆動電圧を印加する構成
としたので、第１の発明と同様に、半導体基板の材料に
特に制限を受けることなく、過電圧および逆電圧による
発光素子の破壊を有効に防止できる。In the optical semiconductor device according to the second invention,
A semiconductor substrate having an electrode formed on the lower surface and a first terminal electrode formed on the upper surface of the semiconductor substrate are on the same surface side as a positive electrode.
A light emitting element having a negative surface electrode, one of the surface electrodes of the light emitting element is connected to the first terminal electrode, and the resistance value of the semiconductor substrate is larger than the resistance value during operation of the light emitting element, and The surface electrode of the light emitting element that is not connected to the first terminal electrode and the electrode on the lower surface of the semiconductor substrate are set to the same potential,
Since the driving voltage is applied between the surface electrode of the light emitting element which is not connected to the first terminal electrode and the first terminal electrode, the material of the semiconductor substrate is the same as in the first invention. It is possible to effectively prevent destruction of the light emitting element due to overvoltage and reverse voltage without being particularly limited.
【００３９】本発明によれば、発光素子にその保護回路
としての半導体基板が並列に接続された形態をとるの
で、発光素子の駆動電圧の上昇を防止することもでき
る。According to the present invention, since the semiconductor substrate as a protection circuit for the light emitting element is connected in parallel, it is possible to prevent the driving voltage of the light emitting element from rising.
【図１】 第１の発明に係る光半導体装置の一例を示す
縦断面図である。FIG. 1 is a vertical sectional view showing an example of an optical semiconductor device according to a first invention.
【図２】 半導体基板の抵抗値Ｒと発光素子の静電耐圧
との関係を示す図である。FIG. 2 is a diagram showing a relationship between a resistance value R of a semiconductor substrate and an electrostatic breakdown voltage of a light emitting element.
【図３】 同一面側に正・負の表面電極を有する発光素
子の一例を示す縦断面図である。FIG. 3 is a vertical cross-sectional view showing an example of a light emitting element having positive and negative surface electrodes on the same surface side.
【図４】 第２の発明に係る光半導体装置の一例を示す
縦断面図である。FIG. 4 is a vertical sectional view showing an example of an optical semiconductor device according to a second invention.
【図５】 第２の発明に係る光半導体装置の他の例を示
す縦断面図である。FIG. 5 is a vertical cross-sectional view showing another example of the optical semiconductor device according to the second invention.
【図６】 図４の光半導体装置を搭載した半導体レーザ
装置の斜視図である。6 is a perspective view of a semiconductor laser device equipped with the optical semiconductor device of FIG.
【図７】 図５の光半導体装置を搭載した発光ダイオー
ド装置の縦断面図である。7 is a longitudinal sectional view of a light emitting diode device equipped with the optical semiconductor device of FIG.
【図８】 従来の光半導体装置を示す縦断面図である。FIG. 8 is a vertical cross-sectional view showing a conventional optical semiconductor device.
【図９】 図８の光半導体装置の回路図である。9 is a circuit diagram of the optical semiconductor device of FIG.
１ 半導体基板 ２ 下面電極 ３ 端子電極 ４，４’ 発光素子 ５ 絶縁層 ３１ 第１の端子電極 ３２ 第２の端子電極 ４１ａ，４１ｂ 表面電極 1 Semiconductor substrate 2 Bottom electrode 3 terminal electrode 4,4 'light emitting element 5 insulating layers 31 First terminal electrode 32 Second terminal electrode 41a, 41b surface electrodes
フロントページの続き (72)発明者 上山 孝二 鳥取県鳥取市南吉方３丁目201番地 鳥取 三洋電機株式会社内 Ｆターム(参考） 5F041 AA23 BB22 CA40 DA04 DA09Continued front page (72) Inventor Koji Ueyama 3-201 Minamiyoshikata, Tottori City, Tottori Prefecture Tottori Sanyo Electric Co., Ltd. F-term (reference) 5F041 AA23 BB22 CA40 DA04 DA09
Claims (5)
の半導体基板の上面に形成された端子電極と、異なる面
側に正・負の表面電極を有する発光素子とを備え、 前記表面電極のいずれか一方を前記端子電極に接続し、 前記半導体基板の抵抗値を前記発光素子の作動時抵抗値
よりも大きくし、且つ前記端子電極と接続していない方
の発光素子の表面電極と半導体基板の下面の電極とを同
電位とし、 前記端子電極と接続していない方の発光素子の表面電極
と、前記端子電極との間に駆動電圧を印加することを特
徴とする光半導体装置。1. A semiconductor substrate having an electrode formed on a lower surface, a terminal electrode formed on an upper surface of the semiconductor substrate, and a light-emitting element having positive and negative surface electrodes on different surface sides. Either one is connected to the terminal electrode, the resistance value of the semiconductor substrate is made larger than the operating resistance value of the light emitting element, and the surface electrode and the semiconductor substrate of the light emitting element which is not connected to the terminal electrode. An optical semiconductor device, characterized in that an electrode on the lower surface of the is made to have the same potential, and a drive voltage is applied between the surface electrode of the light emitting element which is not connected to the terminal electrode and the terminal electrode.
この半導体基板の上面に形成された第１の端子電極と、
同一面側に正・負の表面電極を有する発光素子とを備
え、 前記発光素子の表面電極のいずれか一方を第１の端子電
極と接続し、 前記半導体基板の抵抗値を前記発光素子の作動時抵抗値
よりも大きくし、且つ第１の端子電極と接続していない
方の発光素子の表面電極と半導体基板の下面の電極とを
同電位とし、 第１の端子電極と接続していない方の発光素子の表面電
極と、第１の端子電極との間に駆動電圧を印加すること
を特徴とする光半導体装置。2. A semiconductor substrate having an electrode formed on a lower surface,
A first terminal electrode formed on the upper surface of the semiconductor substrate;
A light emitting element having positive and negative surface electrodes on the same surface side, one of the surface electrodes of the light emitting element is connected to a first terminal electrode, and the resistance value of the semiconductor substrate is set to the operation of the light emitting element. One whose resistance is greater than the resistance value and which is not connected to the first terminal electrode and has the same potential as the surface electrode of the light emitting element and the electrode on the lower surface of the semiconductor substrate and which is not connected to the first terminal electrode An optical semiconductor device, wherein a driving voltage is applied between the surface electrode of the light emitting element and the first terminal electrode.
第２の端子電極を形成し、前記発光素子の正・負の表面
電極を第１の端子電極と第２の端子電極とに接続し、第
１の端子電極と第２の端子電極との間に駆動電圧を印可
する請求項２記載の光半導体装置。3. A second terminal electrode is formed on an upper surface of the semiconductor substrate via an insulating layer, and positive / negative surface electrodes of the light emitting element are connected to the first terminal electrode and the second terminal electrode. The optical semiconductor device according to claim 2, wherein a drive voltage is applied between the first terminal electrode and the second terminal electrode.
子である請求項２又は３記載の光半導体装置。4. The optical semiconductor device according to claim 2, wherein the light emitting element is a gallium nitride based semiconductor element.
０００Ωの範囲である請求項１〜４のいずれかに記載の
光半導体装置。5. The resistance value of the semiconductor substrate is 50 to 15,
The optical semiconductor device according to claim 1, wherein the optical semiconductor device has a range of 000Ω.
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|---|---|---|---|
| JP2001306349A JP3920613B2 (en) | 2001-10-02 | 2001-10-02 | Optical semiconductor device |
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|---|---|---|---|
| JP2001306349A JP3920613B2 (en) | 2001-10-02 | 2001-10-02 | Optical semiconductor device |
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| JP3920613B2 JP3920613B2 (en) | 2007-05-30 |
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| JP2001306349A Expired - Fee Related JP3920613B2 (en) | 2001-10-02 | 2001-10-02 | Optical semiconductor device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0489150A (en) * | 1990-07-31 | 1992-03-23 | Nisshin Steel Co Ltd | Production of wire net and wire net |
| US7190004B2 (en) | 2003-12-03 | 2007-03-13 | Sumitomo Electric Industries, Ltd. | Light emitting device |
| US7202509B2 (en) | 2003-08-26 | 2007-04-10 | Sumitomo Electric Industries, Ltd. | Light emitting apparatus |
| US7995636B2 (en) | 2004-06-08 | 2011-08-09 | Fuji Xerox Co., Ltd. | Semiconductor laser apparatus and manufacturing method thereof |
| JP2011199006A (en) * | 2010-03-19 | 2011-10-06 | Sharp Corp | Nitride semiconductor laser element |
| JP2015211135A (en) * | 2014-04-25 | 2015-11-24 | ウシオオプトセミコンダクター株式会社 | Semiconductor optical device |
-
2001
- 2001-10-02 JP JP2001306349A patent/JP3920613B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0489150A (en) * | 1990-07-31 | 1992-03-23 | Nisshin Steel Co Ltd | Production of wire net and wire net |
| US7202509B2 (en) | 2003-08-26 | 2007-04-10 | Sumitomo Electric Industries, Ltd. | Light emitting apparatus |
| US7687822B2 (en) | 2003-08-26 | 2010-03-30 | Sumitomo Electric Industries, Ltd. | Light emitting apparatus |
| US7190004B2 (en) | 2003-12-03 | 2007-03-13 | Sumitomo Electric Industries, Ltd. | Light emitting device |
| US7995636B2 (en) | 2004-06-08 | 2011-08-09 | Fuji Xerox Co., Ltd. | Semiconductor laser apparatus and manufacturing method thereof |
| JP2011199006A (en) * | 2010-03-19 | 2011-10-06 | Sharp Corp | Nitride semiconductor laser element |
| JP2015211135A (en) * | 2014-04-25 | 2015-11-24 | ウシオオプトセミコンダクター株式会社 | Semiconductor optical device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3920613B2 (en) | 2007-05-30 |
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