JP2003060176A - Solid state imaging element - Google Patents
Solid state imaging elementInfo
- Publication number
- JP2003060176A JP2003060176A JP2001240584A JP2001240584A JP2003060176A JP 2003060176 A JP2003060176 A JP 2003060176A JP 2001240584 A JP2001240584 A JP 2001240584A JP 2001240584 A JP2001240584 A JP 2001240584A JP 2003060176 A JP2003060176 A JP 2003060176A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- solid
- layer
- absorbing function
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、Ｃ−ＭＯＳやＣＣ
Ｄで代表される固体撮像素子に関ものであり、特に、色
再現性を損なうことなくカメラの光学系を小型にするこ
とができ、また、微細なマイクロレンズの形成を可能と
する固体撮像素子に関する。TECHNICAL FIELD The present invention relates to a C-MOS or CC.
The present invention relates to a solid-state image pickup device represented by D, and in particular, a solid-state image pickup device capable of downsizing an optical system of a camera without impairing color reproducibility and forming fine microlenses. Regarding
【０００２】[0002]
【従来の技術】カメラに装着されたＣ−ＭＯＳやＣＣＤ
等の光電変換素子を有する固体撮像素子は、撮像時に色
分解を行わせるために、その光電変換素子上に原色（Ｒ
ＧＢ）系、或いは補色（ＹＭＣ）系の三原色のカラーフ
ィルタ層が設けられている。しかし、光電変換素子は、
人間の可視領域（４００ｎｍ〜７００ｎｍ）外に、すな
わち、長波長の赤外領域（７００ｎｍ〜１１００ｎｍ）
にも高い感度を有しており、また、カラーフィルタ層に
は赤外領域の光をカットする機能がなく、従って、７０
０ｎｍ以上の長波長の光が光電変換素子に入ってしまい
正確な色分解がなされない。2. Description of the Related Art C-MOS and CCD mounted on a camera
A solid-state image pickup device having a photoelectric conversion device such as the above-mentioned photoelectric conversion device has a primary color (R
A color filter layer of three primary colors of GB) type or complementary color (YMC) type is provided. However, the photoelectric conversion element
Outside the human visible range (400 nm to 700 nm), that is, the long-wavelength infrared range (700 nm to 1100 nm)
Also has a high sensitivity, and the color filter layer does not have the function of cutting light in the infrared region.
Light with a long wavelength of 0 nm or more enters the photoelectric conversion element, and accurate color separation cannot be performed.
【０００３】この不正確な色分解を避けるため、例え
ば、無機多層膜による反射型の赤外線カットフィルタ
と、金属イオンを含む無機ガラスや色素を用いた吸収型
の赤外線カットフィルタとをカメラの光学系に挿入して
いるのが現状である。この内、吸収型の赤外線カットフ
ィルタは、赤外領域の光の斜め入射や再入射の影響をな
くす目的のものである。また、これらの赤外線カットフ
ィルタは、厚みがそれぞれ１〜３ｍｍあり、カメラを小
型化する際に問題となっていた。In order to avoid this inaccurate color separation, for example, a reflection type infrared cut filter made of an inorganic multilayer film and an absorption type infrared cut filter made of inorganic glass or pigment containing metal ions are used as an optical system of a camera. It is currently being inserted into. Among them, the absorption type infrared cut filter is intended to eliminate the influence of oblique incidence and re-incident light in the infrared region. Further, these infrared cut filters have a thickness of 1 to 3 mm, respectively, which has been a problem when miniaturizing the camera.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、上記の問題
点に鑑みてなされたものであり、上記反射型の赤外線カ
ットフィルタ及び吸収型の赤外線カットフィルタが有す
る赤外領域の光をカットする機能に相当する機能をもっ
た固体撮像素子であって、微細なマイクロレンズの形成
を可能としたノイズの無い固体撮像素子を提供すること
を課題とする。この固体撮像素子をカメラに装着するこ
とにより、上記赤外線カットフィルタを不要なものとし
カメラを容易に小型化することができるものとなる。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and cuts light in the infrared region of the reflection type infrared cut filter and the absorption type infrared cut filter. An object of the present invention is to provide a solid-state image sensor having a function corresponding to the function, which is capable of forming fine microlenses and has no noise. By mounting this solid-state image pickup device on a camera, the infrared cut filter becomes unnecessary and the camera can be easily miniaturized.
【０００５】[0005]
【課題を解決するための手段】本発明は、複数の光電変
換素子上に、少なくとも平坦化層、カラーフィルタ層、
アンダーコート層、マイクロレンズを構成要素として備
えた固体撮像素子において、該構成要素の少なくとも１
構成要素が赤外線吸収機能をもち、該アンダーコート層
が紫外線吸収機能をもつことを特徴とする固体撮像素子
である。The present invention provides at least a flattening layer, a color filter layer, and a plurality of photoelectric conversion elements on a plurality of photoelectric conversion elements.
In a solid-state imaging device including an undercoat layer and a microlens as constituent elements, at least one of the constituent elements
The solid-state imaging device is characterized in that its constituent elements have an infrared ray absorbing function and the undercoat layer has an ultraviolet ray absorbing function.
【０００６】また、本発明は、上記発明による固体撮像
素子において、前記構成要素の少なくとも１構成要素に
赤外線吸収剤を含有させて赤外線吸収機能をもたせ、前
記アンダーコート層に紫外線吸収剤を含有させて紫外線
吸収機能をもたせたことを特徴とする固体撮像素子であ
る。In the solid-state image pickup device according to the present invention, at least one of the constituent elements contains an infrared absorbing agent to have an infrared absorbing function, and the undercoat layer contains an ultraviolet absorbing agent. The solid-state imaging device is characterized by having an ultraviolet absorbing function.
【０００７】また、本発明は、上記発明による固体撮像
素子において、前記赤外線吸収剤が複数の赤外線吸収剤
であることを特徴とする固体撮像素子である。The present invention is also the solid-state image pickup device according to the above-mentioned invention, wherein the infrared absorbing agent is a plurality of infrared absorbing agents.
【０００８】また、本発明は、上記発明による固体撮像
素子において、前記赤外線吸収剤を含有させる構成要素
がカラーフィルタ層の際に、カラーフィルタ層の色毎に
赤外線吸収剤の種類、含有量を調節したことを特徴とす
る固体撮像素子である。Further, in the present invention, in the solid-state image pickup device according to the above-mentioned invention, when the constituent element containing the infrared absorbing agent is a color filter layer, the kind and the content of the infrared absorbing agent are different for each color of the color filter layer. The solid-state imaging device is characterized by being adjusted.
【０００９】また、本発明は、上記発明による固体撮像
素子において、前記アンダーコート層の屈折率が、マイ
クロレンズの屈折率より低いことを特徴とする固体撮像
素子である。Further, the present invention is the solid-state image pickup device according to the above invention, wherein the undercoat layer has a refractive index lower than that of the microlens.
【００１０】[0010]
【発明の実施の形態】以下に、本発明による固体撮像素
子を、その実施形態に基づいて説明する。図１は、本発
明による固体撮像素子の一実施例の部分断面図である。
図１に示すように、本発明による固体撮像素子は、その
表面に光電変換素子（１９）、遮光層（１８）などが形
成された半導体基板（２０）上に、第一平坦化層（１
５）、カラーフィルタ層（１４）、第二平坦化層（１
３）、アンダーコート層（１２）、マイクロレンズ（１
１）が、順次に積層し形成されたものである。尚、カラ
ーフィルタ層（１４）はＲ（赤色）、Ｇ（緑色）、Ｂ
（青色）の３色の層で構成されている。BEST MODE FOR CARRYING OUT THE INVENTION The solid-state image sensor according to the present invention will be described below based on its embodiments. FIG. 1 is a partial sectional view of an embodiment of a solid-state image sensor according to the present invention.
As shown in FIG. 1, the solid-state imaging device according to the present invention comprises a first flattening layer (1) on a semiconductor substrate (20) on the surface of which a photoelectric conversion device (19), a light shielding layer (18) and the like are formed.
5), color filter layer (14), second flattening layer (1
3), undercoat layer (12), microlens (1
1) is formed by sequentially stacking. The color filter layer (14) is R (red), G (green), B
It is composed of layers of three colors (blue).
【００１１】図１に示すように、本発明による固体撮像
素子の一実施例は、光電変換素子（１９）上に備えた第
一平坦化層（１５）、カラーフィルタ層（１４）、第二
平坦化層（１３）、アンダーコート層（１２）、マイク
ロレンズ（１１）などの構成要素の少なくとも１構成要
素に赤外線吸収剤を含有させて赤外線吸収機能をもた
せ、アンダーコート層（１２）に紫外線吸収剤を含有さ
せて紫外線吸収機能をもたせた固体撮像素子である。As shown in FIG. 1, an embodiment of the solid-state image pickup device according to the present invention comprises a first flattening layer (15), a color filter layer (14) and a second flattening layer (15) provided on a photoelectric conversion device (19). At least one of the components such as the flattening layer (13), the undercoat layer (12), and the microlens (11) contains an infrared absorber to have an infrared absorbing function, and the undercoat layer (12) is exposed to ultraviolet rays. It is a solid-state imaging device that contains an absorber and has an ultraviolet absorbing function.
【００１２】本発明で使用可能な赤外線吸収剤として
は、アントラキノン系化合物、フタロシアニン系化合
物、シアニン系化合物、ポリメチレン系化合物、アルミ
ニウム系化合物、ジイモニウム系化合物、イモニウム系
化合物、アゾ系化合物などがあげられる。赤外線吸収剤
の多くは、その吸収波長域が限定され、Ｃ−ＭＯＳやＣ
ＣＤ等の光電変換素子で要求される近赤外および赤外域
（例えば、６５０ｎｍ〜１１００ｎｍ）の領域全てを１
種の赤外線吸収剤でカバーすることは困難である。故
に、２種から６種類程度の複数の赤外吸収剤を混合し
て、或いは、１構成要素を多層にして用いることが好ま
しい。Examples of infrared absorbers usable in the present invention include anthraquinone compounds, phthalocyanine compounds, cyanine compounds, polymethylene compounds, aluminum compounds, diimonium compounds, immonium compounds and azo compounds. . Most of the infrared absorbers have a limited absorption wavelength range, and C-MOS and C
All of the near-infrared and infrared regions (for example, 650 nm to 1100 nm) required for photoelectric conversion elements such as CDs are set to 1
It is difficult to cover with some infrared absorbers. Therefore, it is preferable to use a mixture of 2 to 6 types of infrared absorbers, or to use one component in multiple layers.
【００１３】また、可視領域（４００ｎｍ〜７００ｎ
ｍ）の透過率を確保しながら、十分な赤外線吸収機能を
付与するには、Ｃ−ＭＯＳやＣＣＤ等の光電変換素子上
に備えた構成要素の複数に赤外線吸収機能を分担させる
ことが好ましい。例えば、同一の赤外線吸収剤を、異な
る構成要素に含有させて赤外線吸収機能を強化すると
か、吸収波長域の異なる赤外線吸収剤を、各々異なる構
成要素に含有させるなどを行い赤外線吸収機能を分担さ
せることが好ましい。尚、赤外線吸収剤のもつ耐熱性な
どを考慮して、どの構成要素に含有させかを選択するこ
ともできる。In the visible region (400 nm to 700 n
In order to impart a sufficient infrared absorbing function while ensuring the transmittance of m), it is preferable that a plurality of components provided on the photoelectric conversion element such as C-MOS and CCD share the infrared absorbing function. For example, the same infrared absorbing agent may be contained in different constituent elements to enhance the infrared absorbing function, or infrared absorbing agents having different absorption wavelength ranges may be contained in different constituent elements to share the infrared absorbing function. It is preferable. It should be noted that it is possible to select which constituent element should be contained in consideration of the heat resistance of the infrared absorber.
【００１４】また、光電変換素子上に備えた原色（ＲＧ
Ｂ）系、或いは補色（ＹＭＣ）系の三原色のカラーフィ
ルタ層においては、色毎に赤外領域の分光特性（吸収）
は異なるために、赤外線吸収機能をもたせる際には、吸
収波長域の異なる、すなわち、赤外線吸収剤の種類及び
含有量を調節して含有させることが好ましい。In addition, the primary colors (RG
In the B) type or complementary color (YMC) type primary color filter layers, the spectral characteristics (absorption) in the infrared region for each color
Therefore, when having an infrared absorbing function, it is preferable that the infrared absorbing agent has a different absorption wavelength range, that is, the type and content of the infrared absorbing agent are adjusted to be contained.
【００１５】本発明で使用可能な紫外線吸収剤として
は、ベンゾトリアゾール系化合物、ベンゾフェノン系化
合物、サリチル酸系化合物、クマリン系化合物などがあ
げられ、これら紫外線吸収剤に、例えば、ヒンダードミ
ン系化合物のような光安定化剤やクエンチャー（例え
ば、一重項酸素クエンチャー）を添加しても良い。アン
ダーコート層に含有させる紫外線吸収剤は、耐光性にや
や難のある赤外線吸収剤を紫外光からの保護するため、
及び、マイクロレンズを形成する材料であるフォトレジ
ストを用いたパターン形成時の露光（一般には、３６５
ｎｍのｉ線による）の反射を防止するために含有させる
ものである。ｉ線の反射を防止することにより、より微
細なパターン形成を可能とし、より微細なマイクロレン
ズを形成することができるものとなる。Examples of the ultraviolet absorber that can be used in the present invention include benzotriazole compounds, benzophenone compounds, salicylic acid compounds, coumarin compounds, and the like, and these ultraviolet absorbers include, for example, hinderedmin compounds. A light stabilizer and a quencher (for example, a singlet oxygen quencher) may be added. The ultraviolet absorber contained in the undercoat layer protects the infrared absorber, which is slightly difficult in light resistance, from ultraviolet light.
And exposure at the time of pattern formation using a photoresist that is a material for forming a microlens (generally, 365
nm i-line) to prevent reflection. By preventing the reflection of the i-line, a finer pattern can be formed and a finer microlens can be formed.
【００１６】固体撮像素子をカメラに装着した際に、入
射光の一部はマイクロレンズの表面で反射され、上方の
カバーガラスで再反射されて迷光となる。この迷光はノ
イズとなるが、このノイズを低減させるためにアンダー
コート層の屈折率はマイクロレンズの屈折率より低いこ
とが好ましい。図１に示すように、マイクロレンズの下
層となるアンダーコート層は、複数のマイクロレンズ間
でアンダーコート層が露出された状態になっている。こ
の露出された部分の下方には遮光層が設けられているの
で、この部分への迷光はノイズとはならない。When the solid-state image pickup device is mounted on a camera, a part of incident light is reflected by the surface of the microlens and re-reflected by the upper cover glass to become stray light. This stray light becomes noise, but in order to reduce this noise, the refractive index of the undercoat layer is preferably lower than that of the microlens. As shown in FIG. 1, the undercoat layer, which is the lower layer of the microlenses, is in a state in which the undercoat layer is exposed between the plurality of microlenses. Since the light-shielding layer is provided below this exposed portion, stray light to this portion does not become noise.
【００１７】一般に、屈折率の低いものは、光の反射率
が低く、透過率が高い。従って、アンダーコート層の屈
折率を低くすることによって、この露出された部分に再
反射された迷光を再々反射させることなく、より多く透
過させることによりノイズを低減させることができる。In general, a material having a low refractive index has a low light reflectance and a high transmittance. Therefore, by lowering the refractive index of the undercoat layer, it is possible to reduce the noise by transmitting a larger amount of the stray light re-reflected by the exposed portion without re-reflecting it.
【００１８】[0018]
【実施例】以下に、本発明による固体撮像素子を実施例
により詳細に説明する。
＜実施例１＞第一平坦化層（１５）、及び第二平坦化層
（１３）は、熱硬化による酸−エポキシタイプのスチレ
ン−メタクリル酸コポリマーを主成分とする塗布液の樹
脂固形分に対し、アゾ系の赤外線吸収剤 ＮＩＡ−７７
０Ｈ（ハッコウケミカル（株）製）を約１．５％、及び
ＮＩＡ−９５０Ｈ（ハッコウケミカル（株）製）を約
２．０％溶解せしめた塗布液を用いてスピンコートし、
硬膜させ形成した。EXAMPLES The solid-state image pickup device according to the present invention will be described in detail below with reference to examples. <Example 1> The first flattening layer (15) and the second flattening layer (13) were formed on the resin solid content of a coating liquid containing a thermosetting acid-epoxy type styrene-methacrylic acid copolymer as a main component. In contrast, azo infrared absorber NIA-77
OH (manufactured by Hakko Chemical Co., Ltd.) about 1.5% and NIA-950H (manufactured by Hakko Chemical Co., Ltd.) about 2.0% were spin-coated using a coating solution.
It was cured and formed.
【００１９】カラーフィルタ層（１４）は、長波長域で
透過率の高いＲ（赤色）に、そのアクリル樹脂の固形分
に対し、赤外線吸収剤 ＮＩＡ−９２２Ｈ（ハッコウケ
ミカル（株）製）を約２．０％溶解せしめて形成した。
Ｇ（緑色）、Ｂ（青色）には、そのアクリル樹脂の固形
分に対し、同じく赤外線吸収剤 ＮＩＡ−９２２Ｈ（ハ
ッコウケミカル（株）製）を約０．５％溶解せしめて形
成した。用いた赤外線吸収剤の吸収のピーク波長は、Ｎ
ＩＡ−７７０Ｈが７７０ｎｍ、ＮＩＡ−９２２Ｈが９２
０ｎｍ、ＮＩＡ−９５０Ｈが９５０ｎｍであるため、７
００ｎｍから１０００ｎｍの範囲の赤外線をカバーでき
るものである。The color filter layer (14) has R (red), which has a high transmittance in the long wavelength region, and an infrared absorbent NIA-922H (manufactured by Hakko Chemical Co., Ltd.) for the solid content of the acrylic resin. It was formed by dissolving 2.0%.
About G (green) and B (blue), about 0.5% of the infrared absorbent NIA-922H (manufactured by Hako Chemical Co., Ltd.) was dissolved in the solid content of the acrylic resin to form the acrylic resin. The absorption peak wavelength of the infrared absorbent used is N
IA-770H is 770nm, NIA-922H is 92
0 nm, NIA-950H is 950 nm, so 7
It can cover infrared rays in the range of 00 nm to 1000 nm.
【００２０】アンダーコート層（１２）は、屈折率１．
４５のフッ素系アクリル樹脂の固形分に対し、紫外線吸
収剤 ＳＶ−５０（ハッコウケミカル（株）製）を約
１．０％、アゾ系の赤外線吸収剤 ＮＩＡ−７７０Ｈ
（ハッコウケミカル（株）製）を約１．０％溶解せしめ
た塗布液を用いてスピンコートし、硬膜させ形成した。
マイクロレンズは、フェノールノボラック骨格のナフト
キノンジアジド系のフォトレジストを用いた。硬膜後の
屈折率は約１．６であった。得られた固体撮像素子の赤
外線吸収機能は良好なものであった。The undercoat layer (12) has a refractive index of 1.
About 45% of the fluorine-based acrylic resin solid content of UV absorber SV-50 (manufactured by Hakko Chemical Co., Ltd.), azo infrared absorber NIA-770H.
(Hakkou Chemical Co., Ltd.) was spin-coated with a coating solution in which about 1.0% was dissolved to form a film.
For the microlens, a naphthoquinonediazide-based photoresist having a phenol novolak skeleton was used. The refractive index after hardening was about 1.6. The infrared absorption function of the obtained solid-state imaging device was good.
【００２１】[0021]
【発明の効果】本発明は、固体撮像素子の構成要素が赤
外線吸収機能をもち、アンダーコート層が紫外線吸収機
能をもつので、色再現性を損なうことなく、従来の赤外
線カットフィルタを不要なものとしカメラを容易に小型
化することができる固体撮像素子であって、微細なマイ
クロレンズを有しノイズの無い固体撮像素子となる。According to the present invention, since the components of the solid-state image pickup device have an infrared absorbing function and the undercoat layer has an ultraviolet absorbing function, the conventional infrared cut filter is not required without impairing the color reproducibility. It is a solid-state imaging device that can easily downsize the camera, and has a fine microlens and is a noise-free solid-state imaging device.
【００２２】また、本発明は、赤外線吸収機能を異なる
構成要素に分担させてもたせるので、十分な赤外線吸収
機能を無理なく付与することができる。また、本発明
は、赤外線吸収剤が複数の赤外線吸収剤であるので、十
分な赤外線吸収機能をこと付与することができる。Further, according to the present invention, since the infrared absorption function is shared by different constituent elements, it is possible to impart a sufficient infrared absorption function without difficulty. Further, in the present invention, since the infrared absorbent is a plurality of infrared absorbents, a sufficient infrared absorbing function can be imparted.
【００２３】また、本発明は、赤外線吸収剤を含有させ
る構成要素がカラーフィルタ層の際には、カラーフィル
タ層の色毎に赤外線吸収剤の種類、含有量を調節するの
で、色毎に異なる赤外領域の分光特性（吸収）に対応し
たものとなる。また、本発明は、アンダーコート層の屈
折率が、マイクロレンズの屈折率より低いので、迷光を
より多く透過させノイズを低減させることができる。Further, according to the present invention, when the constituent element containing the infrared absorbing agent is a color filter layer, the type and content of the infrared absorbing agent are adjusted for each color of the color filter layer, so that it is different for each color. It corresponds to the spectral characteristic (absorption) in the infrared region. Further, in the present invention, since the refractive index of the undercoat layer is lower than the refractive index of the microlens, stray light can be transmitted more and noise can be reduced.
【図１】本発明による固体撮像素子の一実施例の部分断
面図である。FIG. 1 is a partial cross-sectional view of an embodiment of a solid-state image sensor according to the present invention.
１１・・・マイクロレンズ １２・・・アンダーコート層 １３・・・第二平坦化層 １４・・・カラーフィルタ層 １５・・・第一平坦化層 １８・・・遮光層 １９・・・光電変換素子 ２０・・・半導体基板 11 ... Microlens 12 ... Undercoat layer 13 ... Second flattening layer 14 ... Color filter layer 15 ... First planarizing layer 18 ... Light-shielding layer 19 ... Photoelectric conversion element 20 ... Semiconductor substrate
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2H048 CA01 CA04 CA12 CA13 CA17 CA23 CA24 CA27 4M118 AA10 AB01 BA10 BA14 FA06 GC08 GC11 GD04 GD07 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 2H048 CA01 CA04 CA12 CA13 CA17 CA23 CA24 CA27 4M118 AA10 AB01 BA10 BA14 FA06 GC08 GC11 GD04 GD07
Claims (5)
化層、カラーフィルタ層、アンダーコート層、マイクロ
レンズを構成要素として備えた固体撮像素子において、
該構成要素の少なくとも１構成要素が赤外線吸収機能を
もち、該アンダーコート層が紫外線吸収機能をもつこと
を特徴とする固体撮像素子。1. A solid-state imaging device comprising a plurality of photoelectric conversion elements, at least a flattening layer, a color filter layer, an undercoat layer, and a microlens as constituent elements,
At least one of the constituent elements has an infrared ray absorbing function, and the undercoat layer has an ultraviolet ray absorbing function.
外線吸収剤を含有させて赤外線吸収機能をもたせ、前記
アンダーコート層に紫外線吸収剤を含有させて紫外線吸
収機能をもたせたことを特徴とする請求項１記載の固体
撮像素子。2. An infrared absorbing agent is contained in at least one of the constituent elements to have an infrared absorbing function, and an ultraviolet absorbing agent is contained in the undercoat layer to have an ultraviolet absorbing function. The solid-state image sensor according to claim 1.
あることを特徴とする請求項２記載の固体撮像素子。3. The solid-state image pickup device according to claim 2, wherein the infrared absorbent is a plurality of infrared absorbents.
カラーフィルタ層の際に、カラーフィルタ層の色毎に赤
外線吸収剤の種類、含有量を調節したことを特徴とする
請求項２、又は請求項３記載の固体撮像素子。4. The type and the content of the infrared absorbing agent are adjusted for each color of the color filter layer when the constituent element containing the infrared absorbing agent is a color filter layer, or The solid-state image sensor according to claim 3.
ロレンズの屈折率より低いことを特徴とする請求項１、
請求項２、請求項３、又は請求項４記載の固体撮像素
子。5. The refractive index of the undercoat layer is lower than that of the microlens.
The solid-state imaging device according to claim 2, claim 3, or claim 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001240584A JP4882182B2 (en) | 2001-08-08 | 2001-08-08 | Solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001240584A JP4882182B2 (en) | 2001-08-08 | 2001-08-08 | Solid-state image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003060176A true JP2003060176A (en) | 2003-02-28 |
| JP4882182B2 JP4882182B2 (en) | 2012-02-22 |
Family
ID=19071169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001240584A Expired - Fee Related JP4882182B2 (en) | 2001-08-08 | 2001-08-08 | Solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4882182B2 (en) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005109196A (en) * | 2003-09-30 | 2005-04-21 | Fuji Photo Film Co Ltd | Color solid-state imaging element and solid-state imaging device using it, and digital camera |
| JP2005302806A (en) * | 2004-04-07 | 2005-10-27 | Fuji Photo Film Co Ltd | Imaging sensor |
| JP2006032897A (en) * | 2004-07-15 | 2006-02-02 | Dongbuanam Semiconductor Ltd | Cmos image sensor and its manufacturing method |
| JP2006108580A (en) * | 2004-10-08 | 2006-04-20 | Matsushita Electric Ind Co Ltd | Solid state image pickup device and manufacturing method therefor |
| WO2006073085A1 (en) * | 2005-01-04 | 2006-07-13 | I Square Reserch Co., Ltd. | Solid-state image pickup device and method for manufacturing same |
| JP2006301489A (en) * | 2005-04-25 | 2006-11-02 | Nidec Copal Corp | Near-infrared ray cut filter |
| JP2007027667A (en) * | 2005-06-17 | 2007-02-01 | Toppan Printing Co Ltd | Imaging element |
| US7223625B2 (en) | 2004-08-11 | 2007-05-29 | Dongbu Electronics Co., Ltd. | CMOS image sensor and method for fabricating the same |
| JP2007181209A (en) * | 2005-12-26 | 2007-07-12 | Magnachip Semiconductor Ltd | Image sensor and manufacturing method thereof |
| CN100356575C (en) * | 2003-06-30 | 2007-12-19 | 三洋电机株式会社 | Method for manufacturing a solid-state image sensing device, such as a ccd |
| JP2008078455A (en) * | 2006-09-22 | 2008-04-03 | Denso Corp | Car-mounted color sensor, and its manufacturing method |
| JP2008177318A (en) * | 2007-01-18 | 2008-07-31 | Sony Corp | Solid-state image pickup device and its manufacturing method, and image pickup device |
| JP2013137337A (en) * | 2011-12-27 | 2013-07-11 | Fujifilm Corp | Method of manufacturing infrared cut filter, infrared absorption liquid composition used for the same, infrared cut filter, and camera module and method of manufacturing the same |
| JP2015128127A (en) * | 2013-11-26 | 2015-07-09 | ソニー株式会社 | Imaging device |
| WO2015115536A1 (en) * | 2014-01-31 | 2015-08-06 | 富士フイルム株式会社 | Red coloring composition for use in color filter, colored film, color filter, and solid-state imaging element |
| JPWO2016190162A1 (en) * | 2015-05-22 | 2018-04-12 | 富士フイルム株式会社 | Coloring composition, film, color filter, pattern forming method, color filter manufacturing method, solid-state imaging device, and infrared sensor |
| KR20190139316A (en) | 2017-08-22 | 2019-12-17 | 후지필름 가부시키가이샤 | Structures, methods for manufacturing the structures, compositions for absorbing layer formation, solid-state imaging devices, and image display devices |
| KR20210122808A (en) | 2019-01-31 | 2021-10-12 | 도판 인사츠 가부시키가이샤 | A filter for a solid-state imaging device, and a solid-state imaging device |
| KR20220062271A (en) | 2019-09-17 | 2022-05-16 | 도판 인사츠 가부시키가이샤 | Infrared light cut filter, filter for solid-state image sensor, solid-state image sensor, and manufacturing method of filter for solid-state image sensor |
| KR20220106117A (en) | 2019-11-27 | 2022-07-28 | 도판 인사츠 가부시키가이샤 | The manufacturing method of the filter for solid-state imaging elements, and the manufacturing method of the solid-state image sensor |
| KR20220117202A (en) | 2019-12-24 | 2022-08-23 | 도판 인사츠 가부시키가이샤 | Manufacturing method of infrared light cut filter, filter for solid-state image sensor, and solid-state image sensor |
| KR20220128339A (en) | 2020-01-15 | 2022-09-20 | 도판 인사츠 가부시키가이샤 | Infrared light cut filter, filter for solid-state image sensor, solid-state image sensor, and manufacturing method of filter for solid-state image sensor |
| KR20230034206A (en) | 2020-07-03 | 2023-03-09 | 도판 인사츠 가부시키가이샤 | Infrared light cut filter, filter for solid-state image sensor, solid-state image sensor, and method for manufacturing filter for solid-state image sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6373204A (en) * | 1986-09-17 | 1988-04-02 | Mitsubishi Electric Corp | Color image pickup element |
| JPH06120461A (en) * | 1992-10-01 | 1994-04-28 | Matsushita Electron Corp | Solid-state image sensing device |
| JP2000183322A (en) * | 1998-12-15 | 2000-06-30 | Sony Corp | Solid-state color image pickup element and manufacture thereof |
-
2001
- 2001-08-08 JP JP2001240584A patent/JP4882182B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6373204A (en) * | 1986-09-17 | 1988-04-02 | Mitsubishi Electric Corp | Color image pickup element |
| JPH06120461A (en) * | 1992-10-01 | 1994-04-28 | Matsushita Electron Corp | Solid-state image sensing device |
| JP2000183322A (en) * | 1998-12-15 | 2000-06-30 | Sony Corp | Solid-state color image pickup element and manufacture thereof |
Cited By (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100356575C (en) * | 2003-06-30 | 2007-12-19 | 三洋电机株式会社 | Method for manufacturing a solid-state image sensing device, such as a ccd |
| JP2005109196A (en) * | 2003-09-30 | 2005-04-21 | Fuji Photo Film Co Ltd | Color solid-state imaging element and solid-state imaging device using it, and digital camera |
| JP4644423B2 (en) * | 2003-09-30 | 2011-03-02 | 富士フイルム株式会社 | Color solid-state imaging device, solid-state imaging device using the color solid-state imaging device, and digital camera |
| JP2005302806A (en) * | 2004-04-07 | 2005-10-27 | Fuji Photo Film Co Ltd | Imaging sensor |
| JP4695849B2 (en) * | 2004-04-07 | 2011-06-08 | 富士フイルム株式会社 | Imaging sensor |
| JP2006032897A (en) * | 2004-07-15 | 2006-02-02 | Dongbuanam Semiconductor Ltd | Cmos image sensor and its manufacturing method |
| US7297570B2 (en) | 2004-07-15 | 2007-11-20 | Dongbu Electronics Co., Ltd. | Complementary metal oxide semiconductor image sensor and method for fabricating the same |
| US7223625B2 (en) | 2004-08-11 | 2007-05-29 | Dongbu Electronics Co., Ltd. | CMOS image sensor and method for fabricating the same |
| JP2006108580A (en) * | 2004-10-08 | 2006-04-20 | Matsushita Electric Ind Co Ltd | Solid state image pickup device and manufacturing method therefor |
| US8134110B2 (en) | 2004-10-08 | 2012-03-13 | Panasonic Corporation | Solid-state imaging device and solid-state imaging device manufacturing method |
| US7989752B2 (en) | 2004-10-08 | 2011-08-02 | Panasonic Corporation | Solid-state imaging device and solid-state imaging device manufacturing method |
| US8368096B2 (en) | 2005-01-04 | 2013-02-05 | Aac Technologies Japan R&D Center Co., Ltd. | Solid state image pick-up device and method for manufacturing the same with increased structural integrity |
| WO2006073085A1 (en) * | 2005-01-04 | 2006-07-13 | I Square Reserch Co., Ltd. | Solid-state image pickup device and method for manufacturing same |
| JP2006301489A (en) * | 2005-04-25 | 2006-11-02 | Nidec Copal Corp | Near-infrared ray cut filter |
| JP2007027667A (en) * | 2005-06-17 | 2007-02-01 | Toppan Printing Co Ltd | Imaging element |
| JP2007181209A (en) * | 2005-12-26 | 2007-07-12 | Magnachip Semiconductor Ltd | Image sensor and manufacturing method thereof |
| US8287948B2 (en) | 2005-12-26 | 2012-10-16 | Intellectual Ventures Ii Llc | Image sensor and method for manufacturing the same |
| US8344469B2 (en) | 2005-12-26 | 2013-01-01 | Intellectual Ventures Ii Llc | Image sensor and method for manufacturing the same |
| US8846433B2 (en) | 2005-12-26 | 2014-09-30 | Intellectual Ventures Ii Llc | Image sensor and method for manufacturing the same |
| JP2008078455A (en) * | 2006-09-22 | 2008-04-03 | Denso Corp | Car-mounted color sensor, and its manufacturing method |
| JP2008177318A (en) * | 2007-01-18 | 2008-07-31 | Sony Corp | Solid-state image pickup device and its manufacturing method, and image pickup device |
| JP2013137337A (en) * | 2011-12-27 | 2013-07-11 | Fujifilm Corp | Method of manufacturing infrared cut filter, infrared absorption liquid composition used for the same, infrared cut filter, and camera module and method of manufacturing the same |
| JP2015128127A (en) * | 2013-11-26 | 2015-07-09 | ソニー株式会社 | Imaging device |
| JP2015163955A (en) * | 2014-01-31 | 2015-09-10 | 富士フイルム株式会社 | Color filter red coloring composition, colored film, color filter, and solid-state image sensor |
| WO2015115536A1 (en) * | 2014-01-31 | 2015-08-06 | 富士フイルム株式会社 | Red coloring composition for use in color filter, colored film, color filter, and solid-state imaging element |
| JPWO2016190162A1 (en) * | 2015-05-22 | 2018-04-12 | 富士フイルム株式会社 | Coloring composition, film, color filter, pattern forming method, color filter manufacturing method, solid-state imaging device, and infrared sensor |
| US10829641B2 (en) | 2015-05-22 | 2020-11-10 | Fujifilm Corporation | Coloring composition, film, color filter, pattern forming method, method for manufacturing color filter, solid image pickup element, and infrared sensor |
| KR20190139316A (en) | 2017-08-22 | 2019-12-17 | 후지필름 가부시키가이샤 | Structures, methods for manufacturing the structures, compositions for absorbing layer formation, solid-state imaging devices, and image display devices |
| US11152413B2 (en) | 2017-08-22 | 2021-10-19 | Fujifilm Corporation | Structure, method for producing structure, composition for forming absorption layer, solid-state imaging element, and image display device |
| KR20210122808A (en) | 2019-01-31 | 2021-10-12 | 도판 인사츠 가부시키가이샤 | A filter for a solid-state imaging device, and a solid-state imaging device |
| KR20220062271A (en) | 2019-09-17 | 2022-05-16 | 도판 인사츠 가부시키가이샤 | Infrared light cut filter, filter for solid-state image sensor, solid-state image sensor, and manufacturing method of filter for solid-state image sensor |
| KR20220106117A (en) | 2019-11-27 | 2022-07-28 | 도판 인사츠 가부시키가이샤 | The manufacturing method of the filter for solid-state imaging elements, and the manufacturing method of the solid-state image sensor |
| KR20220117202A (en) | 2019-12-24 | 2022-08-23 | 도판 인사츠 가부시키가이샤 | Manufacturing method of infrared light cut filter, filter for solid-state image sensor, and solid-state image sensor |
| KR20220128339A (en) | 2020-01-15 | 2022-09-20 | 도판 인사츠 가부시키가이샤 | Infrared light cut filter, filter for solid-state image sensor, solid-state image sensor, and manufacturing method of filter for solid-state image sensor |
| KR20230034206A (en) | 2020-07-03 | 2023-03-09 | 도판 인사츠 가부시키가이샤 | Infrared light cut filter, filter for solid-state image sensor, solid-state image sensor, and method for manufacturing filter for solid-state image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4882182B2 (en) | 2012-02-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003060176A (en) | Solid state imaging element | |
| CN100505277C (en) | Image pick-up component | |
| JP4622516B2 (en) | Solid-state imaging device and manufacturing method thereof | |
| JP2004200360A (en) | Solid-state imaging device and method of manufacturing the same | |
| JP5741347B2 (en) | Optical filter and imaging apparatus using the same | |
| KR100866718B1 (en) | Imaging element | |
| TWI789043B (en) | camera structure | |
| CN107076895A (en) | Optical filter and camera device | |
| CN108700688B (en) | Laminated structure of glass cover plate, camera structure and imaging device | |
| JP2007048774A (en) | Method of manufacturing image sensor | |
| CN100472791C (en) | Imaging element | |
| JP5124917B2 (en) | Image sensor | |
| TWI819187B (en) | Filters for solid-state photography components, and solid-state photography components | |
| JP2000131521A5 (en) | ||
| JP2007027667A (en) | Imaging element | |
| US6545828B2 (en) | Optical device with absorption gradient and selective spectral filtering and lens assembly and camera fitted with such a device | |
| TWI400795B (en) | Image sensor | |
| JP6156468B2 (en) | Light absorber and imaging device using the same | |
| JP2009065178A (en) | Solid-state image pickup element | |
| JP4175169B2 (en) | Solid-state imaging device and manufacturing method thereof | |
| JP2005093659A (en) | Solid imaging device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080725 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110223 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110301 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110408 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111108 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111121 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141216 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4882182 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |