JP2003048957A - Epoxy resin composition - Google Patents
Epoxy resin compositionInfo
- Publication number
- JP2003048957A JP2003048957A JP2001238565A JP2001238565A JP2003048957A JP 2003048957 A JP2003048957 A JP 2003048957A JP 2001238565 A JP2001238565 A JP 2001238565A JP 2001238565 A JP2001238565 A JP 2001238565A JP 2003048957 A JP2003048957 A JP 2003048957A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- weight
- particle size
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Abstract
Description
【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、リード加工性に優
れた半導体封止用エポキシ樹脂組成物に関するものであ
る。
【０００２】
【従来の技術】従来ダイオード、トラジスタ、集積回路
等の半導体素子は、主にエポキシ樹脂組成物を用いて低
圧トランスファー成形法により封止され半導体装置とさ
れている。成形する際、半導体素子を搭載したリードフ
レームを下金型に載置した状態で上下の金型を密閉して
しまうと、金型内の空気の逃げ場がなくなり、エポキシ
樹脂組成物を注入しても金型のコーナーに溜まった空気
の容積分だけエポキシ樹脂組成物が充填されなくなる。
このような現象を防ぐために、通常成形金型のコーナー
部には空気の逃げ道となるエアベントが設けられてお
り、エポキシ樹脂組成物がエアベント部に流出したもの
をバリと呼んでいる。
【０００３】最近半導体装置の多ピン化、薄型化に伴
い、エポキシ樹脂組成物が狭い流路へ充填され易くなる
ように低溶融粘度化されてきており、エアベントからの
バリ発生量も増える傾向にある。更に半導体装置への耐
半田クラック性の要求レベルが高くなってきていること
から、エボキシ樹脂組成物の硬化物の強度や金属への密
着性は様々な手法によって向上してきている。このため
リードフレームへのバリの密着性も高くなってきてお
り、従来と同じバリ取り工程で処理した場合バリの除去
が不十分であったり、打ち抜き金型の摩耗を速め或いは
カッターの刃に付着したバリが打ち抜く際の寸法精度を
低下させてしまうという問題が発生している。このよう
にして得られた半導体装置は寸法や形状が規格を外れる
ことがしばしばあり、歩留まり低下の一つの原因となっ
ている。バリ取り工程で発生した不良品は、既にエポキ
シ樹脂組成物の硬化物で封止されているため再生が困難
であり、使用した全ての構成部材が廃棄対象となってし
まうためコストの損失が大きいばかりでなく、半導体装
置が個片になっているために検査工数が莫大であり、バ
リに起因するリード加工性に優れたエポキシ樹脂組成物
が強く望まれている。
【０００４】
【発明が解決しようとする課題】本発明は、バリの発生
が少なく、耐半田クラック性に優れた特性を有し、かつ
半導体装置の生産工程の一部であるリード加工性に優れ
る半導体封止用エポキシ樹脂組成物を提供するものであ
る。
【０００５】
【課題を解決するための手段】本発明は、（Ａ）エポキ
シ樹脂、（Ｂ）フェノール樹脂、（Ｃ）粒径１μｍ以下
を１０重量％以上、粒径１μｍを越え５μｍ以下を１０
重量％以上、粒径５μｍを越え１０μｍ以下を１０重量
％以上、粒径１０μｍを越え２０μｍ以下を１５重量％
以上、粒径２０μｍを越え４０μｍ以下を２０重量％以
上含む球状溶融シリカ及び（Ｄ）硬化促進剤を必須成分
とするエポキシ樹脂組成物であって、前記球状溶融シリ
カを全エポキシ樹脂組成物中８０〜９３重量％含むこと
を特徴とする半導体封止用エポキシ樹脂組成物である。
【０００６】本発明に用いるエポキシ樹脂は、分子中に
２個以上のエポキシ基を有するものであれば特に限定す
るものではない。エポキシ樹脂としては、例えばクレゾ
ールノボラック型エポキシ樹脂、ジシクロペンタジエン
変性フェノール型エポキシ樹脂、フェノールアラルキル
型エポキシ樹脂、ビフェニル型エポキシ樹脂、ビスフェ
ノール型エポキシ樹脂、スチルベン型エポキシ樹脂等が
挙げられ、これらは単独でも併用しても構わない。エポ
キシ樹脂の硬化性の点からエポキシ当量としては１００
〜５００ｇ／ｅｑが好ましい。本発明に用いるフェノー
ル樹脂は、分子中にフェノール性水酸基を有するもので
あれば特に限定するものではない。フェノール樹脂とし
ては、例えばフェノールノボラック樹脂、フェノールア
ラルキル樹脂、トリフェノールメタン型樹脂等が挙げら
れ、これらは単独でも併用しても構わない。フェノール
樹脂の硬化性の点から水酸基当量としては１００〜２５
０ｇ／ｅｑが好ましい。
【０００７】本発明に用いる球状溶融シリカは、粒径１
μｍ以下を１０重量％以上、粒径１μｍを越え５μｍを
１０重量％以上、粒径５μｍを越え１０μｍ以下を１０
重量％以上、粒径１０μｍを越え２０μｍ以下を１５重
量％以上、粒径２０μｍを越え４０μｍ以下を２０重量
％以上含むものであり、この範囲を満足するものが本発
明の効果を充分に得るためのポイントである。各々の粒
径はレーザー回折式粒度分布測定機（シーラス社・製、
モデル７１５）で測定することができる。バリの発生を
抑えるためには、エポキシ樹脂組成物が流動する部分の
金型の隙間をエポキシ樹脂組成物で塞ぐ必要がある。こ
の作用をするのが球状溶融シリカである。隙間を塞ぎ止
めるためには、その隙間より大きい粒径の粒子が必要で
あるが、大きい粒径の粒子のみでは粒子と粒子の隙間か
ら小さい粒径の粒子が流出してしまうので、隙間よりや
や大きめの粒径の粒子で塞ぎ止め、更にその隙間を適度
な大きさの粒径の粒子で塞がなくてはならない。破砕シ
リカを用いた場合、その形状が角張っておるために、大
きい粒径の粒子しか存在しない場合でも破砕シリカの突
出した部分が隙間に入り込み、粒子同士の隙間から他の
粒子が流出することがないので、特に粒径を調整しなく
てもバリの発生は少ない。しかし球状溶融シリカを用い
た場合、粒径がどの方向から見てもほぼ同じであるため
金型の合わせ面や球状溶融シリカ同士の隙間に応じた大
きさの粒径の粒子が適量配合されていないとバリの発生
を抑えることができない。
【０００８】成形金型の隙間は、エアベントのように数
１０μｍの厚みのものからリードフレームとの隙間のよ
うに数μｍ以下しかないようなものまで多岐に渡るた
め、上記の粒径構成の球状溶融シリカの条件を一つでも
満足させないと、特定の厚みの隙間から発生するバリを
抑えることができないので好ましくない。また、本発明
に用いる粒径構成の球状溶融シリカの特性を損なわない
範囲で他の球状シリカ、或いは破砕シリカ等を用いても
よい。球状溶融シリカの配合量は、全エポキシ樹脂組成
物中８０〜９３重量％が好ましく、８０重量％未満だと
エポキシ樹脂組成物の硬化物の吸水量が増え、強度が低
下するため耐半田クラック性が不十分で、９３重量％を
越えると流動性が損なわれるために成形性に不具合を生
じるため好ましくない。
【０００９】本発明に用いる硬化促進剤は、エポキシ基
と水酸基の反応を促進するものであればよく、一般に封
止材料に使用されているものを利用することができ、例
えば１，８−ジアザビシクロ（５，４，０）ウンデセン
−７、トリフェニルホスフィン、ベンジルジメチルアミ
ン、２−メチルイミダゾール等があり、これらは単独で
も併用してもよい。
【００１０】本発明は、（Ａ）〜（Ｄ）成分を必須成分
とするが、これ以外に必要に応じてカップリング剤、難
燃剤、離型剤、低応力添加剤等の添加剤を適宜配合して
もよい。又本発明のエポキシ樹脂組成物は、各成分の所
定の配合量をミキサー等で均一に混合した後、加熱ロー
ル又はニーダー、押出機等で溶融混練し、冷却後粉砕し
て製造することができる。
【００１１】以下、本発明を実施例にて具体的に説明す
る。
実施例１
ビフェニル型エポキシ樹脂（ＹＸ−４０００Ｈ、ジャパンエポキシレジン（株
）・製、融点１０５℃） ９．５重量部
フェノールノボラック樹脂（軟化点６５℃、水酸基当量１０４）５．９重量部
球状溶融シリカ（粒径は表１の通り） ８２重量部
トリフェニルホスフィン ０．２重量部
三酸化アンチモン ２重量部
カルナバワックス ０．２重量部
カーボンブラック ０．２重量部
をミキサーにて常温混合し、８０〜１００℃の加熱ロー
ルで溶融混練し冷却後粉砕し、エポキシ樹脂組成物を得
た。
【００１２】評価方法
スパイラルフロー：ＥＭＭＩ−１−６６に準じた金型を
用い、エポキシ樹脂組成物を低圧トランスファー成形機
にて１７５℃、射出圧６．９ＭＰａ、保圧時間１２０秒
の条件で成形し、スパイラルフローを測定。スパイラル
フロー判定基準７０ｃｍ未満を不合格、７０ｃｍ以上を
合格とした。
バリ：タブレット化したエポキシ樹脂組成物を用い、８
０ｐＱＦＰ（２．７ｍｍ厚）を低圧トランスファー成形
機にて、１７５℃、射出圧６．９ＭＰａ、保圧時間１２
０秒の条件で成形し、バリ評価用サンプルとした。得ら
れたサンプルのエアベント、ゲート近傍、タイバー上面
のバリを観察した。エアベントバリは２．０ｍｍ以下を
合格、ゲート近傍とタイバー上面のバリは１．０ｍｍ以
下を合格とした。
耐半田クラック性：バリ用に成形した８０ｐＱＦＰを１
７５℃で４時間ポストキュアした後、８５℃、相対湿度
８５％の恒温恒湿槽に１６８時間放置し、ＩＲリフロー
処理して耐半田クラック性を調べた。処理後にクラッ
ク、剥離の発生がないものを合格（○）、発生のあった
ものを（×）とした（ｎ＝１６）。
評価結果を表１に示す。
【００１３】実施例２〜６、比較例１〜５
実施例１と同様にして、エポキシ樹脂組成物を製造し、
同様にして評価した。評価結果を表１に示す。
【００１４】
【表１】【００１５】
【発明の効果】本発明に従うと、従来技術では得られな
かったバリの発生の少ない半導体封止用エポキシ樹脂組
成物を得ることができる。従って電子部品の封止用に用
いた場合、バリ取り工程、リード加工工程での不具合が
減少し、歩留まりの向上、検査工数の短縮等に大きく寄
与する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent leadability. 2. Description of the Related Art Conventionally, semiconductor elements such as diodes, transistors, and integrated circuits have been sealed as a semiconductor device by a low-pressure transfer molding method using an epoxy resin composition. When molding, if the upper and lower molds are sealed while the lead frame mounting the semiconductor element is placed on the lower mold, there is no place for air in the mold to escape, and the epoxy resin composition is injected Also, the epoxy resin composition is not filled by the volume of the air accumulated in the corner of the mold.
In order to prevent such a phenomenon, an air vent, which serves as an escape route for air, is usually provided at a corner portion of the molding die, and an epoxy resin composition flowing out to the air vent portion is called a burr. Recently, with the increase in the number of pins and thinning of semiconductor devices, the epoxy resin composition has been reduced in melt viscosity so that it can be easily filled in a narrow flow path, and the amount of burrs generated from air vents tends to increase. is there. Further, since the required level of solder crack resistance to semiconductor devices has been increasing, the strength of the cured product of the ethoxy resin composition and the adhesion to metal have been improved by various methods. For this reason, the adhesion of burrs to the lead frame has also increased, and when treated in the same deburring process as in the past, burrs were insufficiently removed, wear of the punching mold was accelerated, or adhered to the cutter blade. There has been a problem that dimensional accuracy when punching out the formed burrs is reduced. The size and shape of the semiconductor device obtained in this way often deviate from the standard, which is one of the causes of a decrease in yield. Defective products generated in the deburring process are difficult to regenerate because they are already sealed with a cured product of the epoxy resin composition, and all components used are discarded, resulting in a large cost loss. Not only that, since the semiconductor devices are individual pieces, the number of inspection steps is enormous, and there is a strong demand for an epoxy resin composition having excellent lead workability due to burrs. DISCLOSURE OF THE INVENTION The present invention has low burr generation, has excellent solder crack resistance, and has excellent lead workability which is a part of a semiconductor device production process. An object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation. The present invention provides (A) an epoxy resin, (B) a phenolic resin, and (C) 10% by weight or more of particles having a particle size of 1 μm or less and 10% by weight of particles having a particle size exceeding 1 μm and 5 μm or less.
10% by weight or more, more than 10% by weight and more than 10% by weight, and 15% by weight more than 10μm and less than 20μm.
An epoxy resin composition comprising spherical fused silica containing 20% by weight or more of particles having a particle size of more than 20 μm and not more than 40 μm and (D) an epoxy resin composition as essential components, wherein the spherical fused silica comprises 80% of the total epoxy resin composition. It is an epoxy resin composition for semiconductor encapsulation, characterized in that the composition contains about 93% by weight. The epoxy resin used in the present invention is not particularly limited as long as it has two or more epoxy groups in a molecule. Examples of the epoxy resin include cresol novolak type epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, bisphenol type epoxy resin, stilbene type epoxy resin, and the like. You may use them together. The epoxy equivalent is 100 in terms of the curability of the epoxy resin.
~ 500 g / eq is preferred. The phenol resin used in the present invention is not particularly limited as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include a phenol novolak resin, a phenol aralkyl resin, a triphenol methane resin, and the like, and these may be used alone or in combination. From the viewpoint of curability of the phenol resin, the hydroxyl equivalent is 100 to 25.
0 g / eq is preferred. The spherical fused silica used in the present invention has a particle size of 1
μm or less, 10% by weight or more, particle size of more than 1 μm and 5 μm of 10% by weight or more, and particle size of more than 5 μm and 10 μm or less
15% by weight or more, and more than 20% by weight of particles having a particle size of more than 20 μm, and those having a particle size of more than 20 μm but not less than 20 μm in order to sufficiently obtain the effects of the present invention. The point is. Each particle size is measured by a laser diffraction particle size distribution analyzer (Cirrus Co.,
Model 715). In order to suppress the generation of burrs, it is necessary to close the gap in the mold where the epoxy resin composition flows with the epoxy resin composition. It is spherical fused silica that performs this function. In order to close the gap, particles having a particle size larger than the gap are required.However, only particles having a large particle size are slightly smaller than the gap because particles having a small particle size flow out of the gap between the particles. It is necessary to close the gap with particles having a relatively large particle size, and further to close the gap with particles having a moderately large particle size. When crushed silica is used, the protruding portion of the crushed silica enters the gap even when only particles having a large particle size exist because the shape is angular, and other particles may flow out from the gap between the particles. Since there is no burr, the occurrence of burrs is small even without adjusting the particle size. However, when spherical fused silica is used, an appropriate amount of particles having a size corresponding to the mating surface of the mold and the gap between the spherical fused silica are mixed because the particle diameter is almost the same in any direction. Without it, the generation of burrs cannot be suppressed. [0008] The gap of the molding die ranges from a thickness of several tens of μm like an air vent to a gap of only a few μm or less like a gap with a lead frame. Unless one of the conditions of the fused silica is satisfied, it is not preferable because burrs generated from a gap having a specific thickness cannot be suppressed. Further, other spherical silica, crushed silica, or the like may be used as long as the characteristics of the spherical fused silica having a particle diameter used in the present invention are not impaired. The compounding amount of the spherical fused silica is preferably 80 to 93% by weight of the total epoxy resin composition, and if it is less than 80% by weight, the water absorption of the cured product of the epoxy resin composition increases and the strength decreases, so that the solder crack resistance is reduced. If the content exceeds 93% by weight, the fluidity is impaired, and the moldability becomes poor. The curing accelerator used in the present invention may be any one which promotes the reaction between an epoxy group and a hydroxyl group, and those which are generally used for a sealing material can be used. For example, 1,8-diazabicyclo There are (5,4,0) undecene-7, triphenylphosphine, benzyldimethylamine, 2-methylimidazole and the like, and these may be used alone or in combination. In the present invention, the components (A) to (D) are essential components, and other additives such as a coupling agent, a flame retardant, a mold release agent, and a low stress additive are appropriately added as necessary. You may mix. The epoxy resin composition of the present invention can be produced by uniformly mixing predetermined amounts of the respective components with a mixer or the like, melt-kneading with a heating roll or a kneader, an extruder, or the like, and cooling and pulverizing. . Hereinafter, the present invention will be described specifically with reference to examples. Example 1 Biphenyl type epoxy resin (YX-4000H, manufactured by Japan Epoxy Resins Co., Ltd., melting point 105 ° C) 9.5 parts by weight Phenol novolak resin (softening point 65 ° C, hydroxyl equivalent 104) 5.9 parts by weight Spherical melting Silica (particle size is as shown in Table 1) 82 parts by weight Triphenylphosphine 0.2 parts by weight Antimony trioxide 2 parts by weight Carnauba wax 0.2 parts by weight Carbon black 0.2 parts by weight is mixed at room temperature with a mixer, The mixture was melt-kneaded with a heating roll at 100 ° C., cooled and pulverized to obtain an epoxy resin composition. Evaluation method Spiral flow: Using a mold conforming to EMMI-1-66, molding the epoxy resin composition with a low-pressure transfer molding machine at 175 ° C., an injection pressure of 6.9 MPa, and a dwell time of 120 seconds. And measure the spiral flow. Spiral flow criteria: rejection was less than 70 cm, and rejection was 70 cm or more. Burr: Using a tableted epoxy resin composition, 8
0pQFP (2.7mm thickness) was transferred to a low-pressure transfer molding machine at 175 ° C, at an injection pressure of 6.9MPa, and a dwell time of 12 hours.
Molding was performed under the condition of 0 seconds to obtain a burr evaluation sample. The obtained sample was observed for air vent, near the gate, and burrs on the upper surface of the tie bar. The air vent burrs passed 2.0 mm or less, and the burrs near the gate and the upper surface of the tie bar passed 1.0 mm or less. Solder crack resistance: One 80pQFP molded for burr
After post-curing at 75 ° C. for 4 hours, it was left in a thermo-hygrostat at 85 ° C. and a relative humidity of 85% for 168 hours, and subjected to IR reflow treatment to examine solder cracking resistance. A sample without cracks and peeling after the treatment was evaluated as acceptable (合格) and a sample with cracks was evaluated as (x) (n = 16). Table 1 shows the evaluation results. Examples 2 to 6, Comparative Examples 1 to 5 An epoxy resin composition was prepared in the same manner as in Example 1,
It evaluated similarly. Table 1 shows the evaluation results. [Table 1] According to the present invention, it is possible to obtain an epoxy resin composition for semiconductor encapsulation which has little burrs which cannot be obtained by the prior art. Therefore, when used for sealing electronic components, defects in the deburring step and the lead processing step are reduced, which greatly contributes to an improvement in yield and a reduction in inspection man-hours.
Claims (1)
脂、（Ｃ）粒径１μｍ以下を１０重量％以上、粒径１μ
ｍを越え５μｍ以下を１０重量％以上、粒径５μｍを越
え１０μｍ以下を１０重量％以上、粒径１０μｍを越え
２０μｍ以下を１５重量％以上、粒径２０μｍを越え４
０μｍ以下を２０重量％以上含む球状溶融シリカ及び
（Ｄ）硬化促進剤を必須成分とするエポキシ樹脂組成物
であって、前記球状溶融シリカを全エポキシ樹脂組成物
中８０〜９３重量％含むことを特徴とする半導体封止用
エポキシ樹脂組成物。Claims: 1. An epoxy resin, (B) a phenolic resin, and (C) a particle size of 1 μm or less at 10% by weight or more and a particle size of 1 μm.
m, 5 μm or less, 10% by weight or more, particle size of more than 5 μm, 10 μm or less, 10% by weight or more, particle size of more than 10 μm, 20 μm or less, 15% by weight or more, particle size of more than 20 μm4
An epoxy resin composition comprising, as essential components, spherical fused silica containing 0 μm or less of 20% by weight or more and (D) a curing accelerator, wherein the spherical fused silica is contained in an amount of 80 to 93% by weight in the total epoxy resin composition. Characteristic epoxy resin composition for semiconductor encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001238565A JP4710195B2 (en) | 2001-08-07 | 2001-08-07 | Epoxy resin composition |
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| JP2001238565A JP4710195B2 (en) | 2001-08-07 | 2001-08-07 | Epoxy resin composition |
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| JP2003048957A true JP2003048957A (en) | 2003-02-21 |
| JP4710195B2 JP4710195B2 (en) | 2011-06-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008001748A (en) * | 2006-06-20 | 2008-01-10 | Kyocera Chemical Corp | Epoxy resin composition for sealing use and semiconductor device |
| JP2009114325A (en) * | 2007-11-06 | 2009-05-28 | Kyocera Chemical Corp | Epoxy resin molding compound for sealing use, and semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6462337A (en) * | 1987-09-01 | 1989-03-08 | Denki Kagaku Kogyo Kk | Burr-proof agent for semiconductor resin sealing and filler for semiconductor resin sealing containing same |
| JPH02145416A (en) * | 1988-11-25 | 1990-06-04 | Nippon Chem Ind Co Ltd | Fused spherical silica and sealing resin composition using the same |
| JPH02261856A (en) * | 1989-03-31 | 1990-10-24 | Toshiba Corp | Epoxy resin composition for semiconductor sealing and semiconductor device sealed therewith |
| JPH08208882A (en) * | 1995-12-04 | 1996-08-13 | Denki Kagaku Kogyo Kk | Filler for semiconductor sealing resin |
| JPH09176457A (en) * | 1996-10-04 | 1997-07-08 | Hitachi Ltd | Thermosetting resin molding material |
| JPH10130469A (en) * | 1996-10-28 | 1998-05-19 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JP2001151988A (en) * | 1999-11-26 | 2001-06-05 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6462337A (en) * | 1987-09-01 | 1989-03-08 | Denki Kagaku Kogyo Kk | Burr-proof agent for semiconductor resin sealing and filler for semiconductor resin sealing containing same |
| JPH02145416A (en) * | 1988-11-25 | 1990-06-04 | Nippon Chem Ind Co Ltd | Fused spherical silica and sealing resin composition using the same |
| JPH02261856A (en) * | 1989-03-31 | 1990-10-24 | Toshiba Corp | Epoxy resin composition for semiconductor sealing and semiconductor device sealed therewith |
| JPH08208882A (en) * | 1995-12-04 | 1996-08-13 | Denki Kagaku Kogyo Kk | Filler for semiconductor sealing resin |
| JPH09176457A (en) * | 1996-10-04 | 1997-07-08 | Hitachi Ltd | Thermosetting resin molding material |
| JPH10130469A (en) * | 1996-10-28 | 1998-05-19 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JP2001151988A (en) * | 1999-11-26 | 2001-06-05 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008001748A (en) * | 2006-06-20 | 2008-01-10 | Kyocera Chemical Corp | Epoxy resin composition for sealing use and semiconductor device |
| JP2009114325A (en) * | 2007-11-06 | 2009-05-28 | Kyocera Chemical Corp | Epoxy resin molding compound for sealing use, and semiconductor device |
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| Publication number | Publication date |
|---|---|
| JP4710195B2 (en) | 2011-06-29 |
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