JP2003048752A - Method for depositing tin doped indium oxide film with high resistance - Google Patents
Method for depositing tin doped indium oxide film with high resistanceInfo
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- JP2003048752A JP2003048752A JP2002217192A JP2002217192A JP2003048752A JP 2003048752 A JP2003048752 A JP 2003048752A JP 2002217192 A JP2002217192 A JP 2002217192A JP 2002217192 A JP2002217192 A JP 2002217192A JP 2003048752 A JP2003048752 A JP 2003048752A
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- tin
- indium oxide
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はスズドープ酸化インジウ
ム膜（以下、ＩＴＯと略す）の成膜方法に関するもので
あり、特にタッチパネルの透明電極として用いられるＩ
ＴＯ膜の高抵抗で均一性に優れた成膜方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a tin-doped indium oxide film (hereinafter abbreviated as ITO), and particularly used as a transparent electrode of a touch panel.
The present invention relates to a film forming method with high resistance and excellent uniformity of a TO film.
【０００２】ＩＴＯ膜は透明導電膜であり、ガラス基板
上に成膜したＩＴＯガラスは、例えば液晶ディスプレ
イ、エレクトロルミネッセンスディスプレイ、面発熱
体、タッチパネルの電極等に広く使用されている。この
様に広い分野で使用されると、使用目的によってＩＴＯ
膜の抵抗値は種々のものが要求される。すなわち、フラ
ットパネルディスプレイ用のＩＴＯ膜では低抵抗のもの
が要求されるが、タッチパネル用のＩＴＯ膜では逆に高
抵抗の膜が要求される。抵抗値をコントロールする方法
の中で最も普通に行われる方法は膜厚を変えることであ
った。The ITO film is a transparent conductive film, and the ITO glass formed on a glass substrate is widely used in, for example, liquid crystal displays, electroluminescent displays, surface heating elements, electrodes of touch panels, and the like. When used in such a wide field, ITO can be used depending on the purpose of use.
Various film resistance values are required. That is, an ITO film for a flat panel display is required to have a low resistance, whereas an ITO film for a touch panel is required to have a high resistance. The most commonly used method of controlling the resistance value was to change the film thickness.
【０００３】[0003]
【発明が解決しようとする課題】前記のように膜厚を変
化させて抵抗値をコントロールすると、当然可視光透過
率が変化する。
シート抵抗＝比抵抗／膜厚
高抵抗ＩＴＯを得ようとする場合は膜厚を薄くする必要
があるが、通常の製法で成膜すると２００〜１０００Ω
／□のシート抵抗の膜を得るためには２０Å〜１００Å
の膜厚にする必要があるが、この場合は膜厚を均一にコ
ントロールするのは難しく、面内の抵抗値の均一性は悪
くなる傾向にある。また、可視光透過率を所定の値にし
ようとすると、膜厚が決定され、その膜厚で所定の抵抗
値の膜とするためには比抵抗をコントロールすることが
必要であった。When the resistance value is controlled by changing the film thickness as described above, the visible light transmittance naturally changes. Sheet resistance = specific resistance / thickness It is necessary to reduce the film thickness in order to obtain high-resistance ITO, but when the film is formed by an ordinary manufacturing method, it is 200 to 1000Ω.
20Å to 100Å to obtain a sheet resistance film of / □
However, in this case, it is difficult to control the film thickness uniformly, and the uniformity of the in-plane resistance value tends to deteriorate. Further, when the visible light transmittance is set to a predetermined value, the film thickness is determined, and it is necessary to control the specific resistance in order to obtain a film having a predetermined resistance value with the film thickness.
【０００４】ＩＴＯ膜が導電性を発現するメカニズム
は、酸化インジウム結晶中の微量の酸素欠陥と、Ｉｎ−
Ｏ結晶格子にＳｎが置換して生じる電子がキャリアとな
り、それが、電界中で移動することによる。従って、比
抵抗（ρ）はキャリア密度（ｎ）と移動度（μ）によっ
て決定され、次式が成り立つ。
ρ＝６．２４×１０18／（ｎ×μ） ・・・・・（１）
ここで、ρ：Ωcm，ｎ：ｃｍ-3，μ：ｃｍ2／Ｖ・ｓｅ
ｃ である。The mechanism by which the ITO film exhibits conductivity is that a small amount of oxygen defects in the indium oxide crystal and In-
This is because electrons generated by substituting Sn in the O crystal lattice become carriers and move in the electric field. Therefore, the specific resistance (ρ) is determined by the carrier density (n) and the mobility (μ), and the following equation holds. ρ = 6.24 × 10 18 / (n × μ) (1) where ρ: Ωcm, n: cm −3 , μ: cm 2 / V · se
c.
【０００５】ＩＴＯ膜の場合、通常３００Å以上の膜厚
では１００Ω／□以下のシート抵抗の膜となり、キャリ
ア密度として１０20〜１０21、移動度として２０〜５
０、比抵抗は１×１０-4〜３×１０-4の値をとる。先に
述べたタッチパネル用のＩＴＯ膜の抵抗値は２００〜１
０００Ω／□程度のものが要求され、この場合、膜厚を
考慮すると、均一性に優れた膜を得るためには比抵抗値
は５×１０-4以上が必要とされるが、この範囲での比抵
抗のコントロールは難しかった。In the case of an ITO film, a film having a sheet resistance of 100 Ω / □ or less is usually formed at a film thickness of 300 Å or more, a carrier density of 10 20 to 10 21 and a mobility of 20 to 5.
0, the specific resistance has a value of 1 × 10 −4 to 3 × 10 −4 . The resistance value of the ITO film for the touch panel described above is 200 to 1
Approximately 000 Ω / □ is required. In this case, considering the film thickness, a specific resistance value of 5 × 10 −4 or more is required to obtain a film with excellent uniformity. It was difficult to control the resistivity.
【０００６】本発明は、前述の実情からみてなされたも
ので、シート抵抗値が２００〜１０００Ω／□であっ
て、かつ、均一性に優れたＩＴＯ膜を成膜する方法を提
供することを目的とする。The present invention has been made in view of the above circumstances, and an object thereof is to provide a method for forming an ITO film having a sheet resistance value of 200 to 1000 Ω / □ and excellent uniformity. And
【０００７】[0007]
【課題を解決するための手段】本発明者らはＩＴＯ膜を
高比抵抗化する方法について鋭意検討した結果、膜中ス
ズドープ量をインジウムに対し１０〜４０重量にするこ
と、また、該方法と酸素を含有雰囲気中で２００℃以上
の温度で加熱処理を併用することにより高抵抗な均一性
に優れたＩＴＯ膜が得られることを見出し、本発明を完
成するに至った。すなわち、本発明は、（発明１）膜中
のスズ含有量がインジウムに対して１０〜４０重量％で
成膜してシート抵抗の均一性が６％以内であることを特
徴とするスズドープ酸化インジウム膜の成膜方法、（発
明２）膜中のスズ含有量がインジウムに対して１０〜４
０重量％で成膜後、酸素を含む雰囲気中で２００℃以上
の温度で加熱処理してシート抵抗の均一性が６％以内で
あることを特徴とするスズドープ酸化インジウム膜の成
膜方法、（発明３）膜中のスズ含有量がインジウムに対
して１０〜４０重量％であり、スパッター法又はパイロ
ゾル法で成膜することを特徴とするスズドープ酸化イン
ジウム膜の成膜方法、（発明４）膜中のスズ含有量がイ
ンジウムに対して１０〜４０重量％であり、スパッター
法又はパイロゾル法で成膜後、酸素を含む雰囲気中で２
００℃以上の温度で加熱処理することを特徴とするスズ
ドープ酸化インジウム膜の成膜方法、（発明５）シート
抵抗が２００〜１０００Ω／□であることを特徴とする
前記発明１〜４記載のスズドープ酸化インジウム膜の成
膜方法、（発明６）膜厚が１５０Å以上であることを特
徴とする前記発明１〜５記載のスズドープ酸化インジウ
ム膜の成膜方法、（発明７）比抵抗が５×１０-4以上で
あることを特徴とする前記発明１〜６記載のスズドープ
酸化インジウム膜の成膜方法、および（発明８）タッチ
パネル用の膜であることを特徴とする前記発明１〜７記
載のスズドープ酸化インジウム膜の成膜方法である。以
下、本発明を詳細に説明する。Means for Solving the Problems The inventors of the present invention have made earnest studies on a method for increasing the resistivity of an ITO film. As a result, the tin doping amount in the film has been set to 10 to 40% by weight of indium. The inventors have found that an ITO film having high resistance and excellent uniformity can be obtained by using heat treatment at a temperature of 200 ° C. or higher in an oxygen-containing atmosphere, and completed the present invention. That is, the present invention (Invention 1) is characterized in that the tin content in the film is 10 to 40% by weight based on indium, and the uniformity of the sheet resistance is within 6%. Film formation method, (Invention 2) The tin content in the film is 10 to 4 relative to indium.
A method for forming a tin-doped indium oxide film, characterized in that the film is formed at 0% by weight and then heat-treated at a temperature of 200 ° C. or higher in an atmosphere containing oxygen so that the uniformity of the sheet resistance is within 6%. Invention 3) A method for forming a tin-doped indium oxide film, wherein the tin content in the film is 10 to 40% by weight with respect to indium, and the film is formed by a sputtering method or a pyrosol method, (Invention 4) film The tin content in the film is 10 to 40% by weight with respect to indium, and after forming a film by a sputtering method or a pyrosol method, it is 2 in an atmosphere containing oxygen.
A method for forming a tin-doped indium oxide film, which is characterized by performing a heat treatment at a temperature of 00 ° C. or higher, and (Invention 5) the tin dope according to the above-mentioned Inventions 1 to 4, wherein the sheet resistance is 200 to 1000Ω / □. Indium oxide film forming method, (Invention 6) The tin-doped indium oxide film forming method according to any one of Inventions 1 to 5, wherein the film thickness is 150 Å or more, (Invention 7) specific resistance is 5 × 10. -4 or more, the method for forming a tin-doped indium oxide film according to any one of the above inventions 1 to 6, and (invention 8) the tin dope according to the above inventions 1 to 7, which is a film for a touch panel. This is a method for forming an indium oxide film. Hereinafter, the present invention will be described in detail.
【０００８】比抵抗をコントロールする方法は二通りあ
って、一つは（１）式のキャリア密度をコントロールす
る方法と、もう一つは移動度をコントロールする方法で
ある。キャリア密度をコントロールする方法としては酸
素欠陥量を変化させる方法と、スズドープ量を変化する
方法がある。酸素欠陥量は、雰囲気、温度によって変化
し、次式に示すように可逆的な反応を利用する。
In2O3→In2O3-X+X/2 O2→In2O3 ・・・・・（２）
この反応は、高温で酸素を含む雰囲気においては酸素欠
陥量(X) が減少し、キャリア密度が減少するために高抵
抗化し、逆に高温、還元雰囲気では酸素欠陥量が増加
し、キャリア密度が増加するために低抵抗化する。There are two methods of controlling the specific resistance. One is the method of controlling the carrier density of the formula (1), and the other is the method of controlling the mobility. As a method of controlling the carrier density, there are a method of changing the amount of oxygen defects and a method of changing the amount of tin doping. The amount of oxygen vacancies changes depending on the atmosphere and temperature, and utilizes a reversible reaction as shown in the following equation. In 2 O 3 → In 2 O 3-X + X / 2 O 2 → In 2 O 3 (2) This reaction reduces the amount of oxygen defects (X) in an atmosphere containing oxygen at high temperature. However, since the carrier density decreases, the resistance increases, and conversely, in a high temperature and reducing atmosphere, the amount of oxygen defects increases, and the carrier density increases, so the resistance decreases.
【０００９】スズドープ量とキャリア密度の関係は、Ｓ
ｎ＝０のとき ｎ≒１０19 であるが、Ｓｎが微量ドープ
されると飛躍的に増加し、Ｓｎ＝１重量％（Ｉｎ＝１０
０）のとき ｎ≒２×１０20 となり、Ｓｎ＝３〜１０重
量％のとき最大値ｎ≒１０21を示す。更にドープ量が増
加するとｎは単調減少する傾向を示し、Ｓｎ＝２０重量
％のとき ｎ≒５×１０20 となる。The relationship between the tin doping amount and the carrier density is S
When n = 0, n≈10 19 , but when Sn is minutely doped, the amount increases dramatically, and Sn = 1% by weight (In = 10
In the case of 0), n≈2 × 10 20 , and when Sn = 3 to 10% by weight, the maximum value n≈10 21 is shown. Further, when the doping amount increases, n tends to decrease monotonously, and when Sn = 20 wt%, n≈5 × 10 20 .
【００１０】移動度（μ）はキャリア（電子又は正孔）
の動き易さに対応しており、主として、ＩＴＯ結晶性に
依存する量である。すなわち、結晶性が良好であって、
不純物が少なければキャリアの移動度は高い値となる
が、一方結晶性が悪く、結晶欠陥、転位、結晶粒界が多
いとキャリアがトラップされてしまうために低い値とな
る。また、不純物はキャリアの移動を阻害する大きな要
因であり、通常微量のドープで移動度に大きな影響を与
える。The mobility (μ) is the carrier (electron or hole)
Is the amount that mainly depends on the ITO crystallinity. That is, the crystallinity is good,
When the amount of impurities is small, the mobility of carriers is high, but on the other hand, when the crystallinity is poor and there are many crystal defects, dislocations, and crystal grain boundaries, the carriers are trapped, and thus the values are low. In addition, impurities are a major factor that hinders carrier migration, and usually a small amount of doping significantly affects mobility.
【００１１】Ｓｎドープ量と移動度の関係は、Ｓｎ微量
ドープのとき移動度は４０以上の高い値を示すが、２重
量％以上のドープ量では単調に減少し、１０重量％以上
では３０以下の値となってしまう。Regarding the relationship between the Sn doping amount and the mobility, the mobility shows a high value of 40 or more in the case of a small amount of Sn doping, but it decreases monotonously at a doping amount of 2% by weight or more and 30 or less at 10% by weight or more. It becomes the value of.
【００１２】これらの検討結果より、２００〜１０００
Ω／□の均一性に優れたＩＴＯ膜を得る方法として、Ｓ
ｎドープ量をコントロールする方法を見出した。すなわ
ち、均一性を良くするには１５０Å以上の膜厚が必要で
あり、このとき比抵抗は３×１０-4以上の値でコントロ
ールしなければならない。方法としてＳｎドープ量がＩ
ｎに対し１０〜４０重量％であるＩＴＯ膜とすることで
高抵抗の膜となる。From these examination results, 200 to 1000
As a method for obtaining an ITO film with excellent Ω / □ uniformity, S
A method for controlling the n-doping amount was found. That is, in order to improve the uniformity, a film thickness of 150 Å or more is required, and at this time, the specific resistance must be controlled to a value of 3 × 10 -4 or more. As a method, the Sn doping amount is I
An ITO film having a content of 10 to 40% by weight with respect to n provides a high resistance film.
【００１３】Ｓｎドープ量がＩｎに対して１０〜４０重
量％の膜は、キャリア密度が約５×１０20個/cm3であ
り、移動度は３０以下の値をとり、比抵抗は５〜８×１
０-4Ωcmの値となる。この場合Ｓｎドープ量は数％オー
ダーの精度で良く、微量ドープの場合に比べてドープ量
の許容範囲が広く成膜し易い条件である。しかしなが
ら、このＳｎドープ量で８×１０-4Ωcm以上の比抵抗を
得たい場合は、酸素欠陥量のコントロールにより、高比
抵抗化する必要がある。すなわち、成膜したＩＴＯ膜
を、酸素を含む雰囲気中で２００℃以上に加熱すること
で比抵抗をより増加することができる。２５０℃×３０
分の処理で約１．５倍、３００℃×３０分で約２倍、３
５０℃×３０分で約２．５倍に増加するので最終的な比
抵抗のコントロールが可能となる。A film having an Sn doping amount of 10 to 40% by weight with respect to In has a carrier density of about 5 × 10 20 particles / cm 3 , a mobility of 30 or less, and a specific resistance of 5 to 10. 8x1
The value is 0 -4 Ωcm. In this case, the Sn doping amount may be on the order of a few percent, and the permissible range of the doping amount is wider than in the case of a small amount doping, which is a condition under which a film can be easily formed. However, in order to obtain a specific resistance of 8 × 10 −4 Ωcm or more with this Sn doping amount, it is necessary to increase the specific resistance by controlling the oxygen defect amount. That is, the specific resistance can be further increased by heating the formed ITO film to 200 ° C. or higher in an atmosphere containing oxygen. 250 ° C x 30
About 1.5 times by the treatment of minutes, about 2 times at 300 ° C x 30 minutes, 3
Since it increases about 2.5 times at 50 ° C. for 30 minutes, it becomes possible to control the final specific resistance.
【００１４】ＩＴＯ膜を成膜する方法としては、一般に
知られている方法を採用できる。すなわち、スパッター
法、電子ビーム蒸着法、イオンプレーティング法、化学
気相成膜法（ＣＶＤ法）、パイロゾル法等において、Ｉ
ＴＯ膜中に前記の量Ｓｎがドープされるよう成膜するこ
とで、高抵抗ＩＴＯ膜が成膜される。得られる膜の透明
性、化学エッチングのし易さなど成膜方法によって条件
は異なるが、一般的にＬＣＤ用の低抵抗ＩＴＯ膜を成膜
する条件でＳｎのドープ量を変えることで対処すること
が可能である。As a method of forming the ITO film, a generally known method can be adopted. That is, in the sputtering method, the electron beam evaporation method, the ion plating method, the chemical vapor deposition method (CVD method), the pyrosol method, etc.
The high resistance ITO film is formed by forming the TO film so that the above amount Sn is doped. Conditions vary depending on the film formation method such as the transparency of the film obtained and the ease of chemical etching, but in general, it is necessary to deal with this by changing the Sn doping amount under the conditions for forming the low resistance ITO film for LCD. Is possible.
【００１５】すなわち、スパッター法では、ターゲット
のＳｎ組成を変え、電子ビーム蒸着法、イオンプレーテ
ィング法ではペレットのＳｎ組成を変え、ＣＶＤ法、パ
イロゾル法では原料中のＳｎ組成を変えれば良い。その
結果いずれの方法を用いて成膜しても、高抵抗の所定の
値にコントロールされたＩＴＯ膜が得られる。That is, in the sputtering method, the Sn composition of the target may be changed, in the electron beam evaporation method and the ion plating method, the Sn composition of the pellet may be changed, and in the CVD method and the pyrosol method, the Sn composition in the raw material may be changed. As a result, no matter which method is used to form the film, an ITO film having a high resistance and controlled to a predetermined value can be obtained.
【００１６】また、Ｓｎドープ量が１０〜４０重量％の
ＩＴＯ膜で８×１０-4Ωcm以上の比抵抗を得たい場合
は、スパッター法、電子ビーム蒸着法、イオンプレーテ
ィング法の場合は、成膜終了と共に、真空の成膜室に酸
素を含むガスを導入し、所定時間２００℃以上の温度で
処理することにより、均一性の良好な高抵抗ＩＴＯ膜を
得ることができる。パイロゾル法の場合は成膜終了後、
酸素含有ガスを成膜室に導入し、所定時間２００℃以上
の温度で処理することにより、均一性の良好な２００〜
１０００Ω／□のＩＴＯ膜を得ることができる。When it is desired to obtain a specific resistance of 8 × 10 −4 Ωcm or more with an ITO film having an Sn doping amount of 10 to 40% by weight, in the case of the sputtering method, the electron beam evaporation method or the ion plating method, When the film formation is completed, a gas containing oxygen is introduced into the vacuum film formation chamber and is treated at a temperature of 200 ° C. or higher for a predetermined time, whereby a highly resistive ITO film having good uniformity can be obtained. In the case of the pyrosol method, after film formation,
By introducing an oxygen-containing gas into the film forming chamber and treating the film at a temperature of 200 ° C. or higher for a predetermined time, 200-
An ITO film of 1000Ω / □ can be obtained.
【００１７】通常の方法で得られるＩＴＯ膜の比抵抗は
３×１０-4Ωcm以下であり、２００〜１０００Ω／□の
抵抗の膜を得るためには、極端に膜厚を薄くしなければ
ならず、このため均一性の悪い膜しか得られなかった。
本発明はＳｎドープ量を１０〜４０重量％にする方法で
あり、簡単に均一性の良好な高抵抗の膜を得ることがで
きる。The specific resistance of the ITO film obtained by the usual method is 3 × 10 −4 Ωcm or less, and in order to obtain a film having a resistance of 200 to 1000 Ω / □, the film thickness must be extremely thin. Therefore, only a film having poor uniformity was obtained.
The present invention is a method in which the Sn doping amount is set to 10 to 40% by weight, and a highly resistive film having good uniformity can be easily obtained.
【００１８】[0018]
【実施例】以下、実施例により本発明を更に具体的に説
明する。ただし、本発明はこれらに何ら限定されるもの
ではない。
実施例１
平均粒径０．２μm のＩｎ2Ｏ3 粉末と平均粒径０．６
μm のＳｎＯ2 粉末とをＩｎに対して３０重量％になる
よう配合し、ボールミル中で５時間粉砕した後、この混
合粉末を８００℃、４００Kg/cm2の条件でホットプレス
して焼結体を得た。これをターゲットとして用い、スパ
ッター成膜を行った。The present invention will be described in more detail with reference to the following examples. However, the present invention is not limited to these. Example 1 In 2 O 3 powder having an average particle size of 0.2 μm and an average particle size of 0.6
A SnO 2 powder having a particle diameter of 30 μm was mixed with In, and the mixture was crushed in a ball mill for 5 hours, and then the mixed powder was hot-pressed at 800 ° C. and 400 Kg / cm 2 to obtain a sintered body. Got Using this as a target, sputtering film formation was performed.
【００１９】スパッター条件は、ＲＦスパッター装置を
用い、ガラス基板上に成膜した。ガラス基板は厚さ１ｍ
ｍで１０ｃｍ角のソーダライムガラス上に８００ÅのＳ
ｉＯ2膜がコートされたものを用いた。ＲＦ出力２００
Ｗ，ガス組成はＡｒ：Ｏ2 ＝９８：２、基板温度＝３０
０℃、成膜時間４分で行った。Regarding the sputtering conditions, an RF sputtering device was used to form a film on a glass substrate. Glass substrate is 1m thick
800Å S on soda lime glass of 10 cm square at m
The iO 2 film coated was used. RF output 200
W, gas composition is Ar: O 2 = 98: 2, substrate temperature = 30
The film formation was performed at 0 ° C. for 4 minutes.
【００２０】得られたＩＴＯ膜は、膜中のＳｎをＩＣＰ
発光分光法で分析したところ２４．６重量％であり膜厚
２２０Å、シート抵抗３５０Ω／□、比抵抗７．７×１
０-4Ωcmであった。また、シート抵抗の均一性は±２０
Ω／□以内（５．７％）であり良好な膜であった。The obtained ITO film was obtained by using Sn in the film as an ICP.
Analysis by emission spectroscopy showed 24.6% by weight, film thickness 220 Å, sheet resistance 350Ω / □, specific resistance 7.7 × 1.
It was 0 −4 Ωcm. The sheet resistance uniformity is ± 20.
Within Ω / □ (5.7%), the film was good.
【００２１】実施例２
超音波霧化による常圧ＣＶＤ法（パイロゾル成膜法）に
よりＩＴＯ膜を成膜するに際し、インジウム原料として
ＩｎＣｌ3 のメチルアルコール溶液を使用した。濃度は
０．１５ｍｏｌ／ｌで、ドープ用錫原料としてＳｎＣｌ
4 のメチルアルコール溶液（濃度は０．２ｍｏｌ／ｌ）
を用いＩｎに対して２５重量％Ｓｎを添加した溶液を調
製した。基板には厚さ１ｍｍで１０ｃｍ角のソーダライ
ムガラス上に１０００ÅのＳｉＯ2 膜がコートされたも
のを用いた。パイロゾル成膜装置に基板をセットし５０
０℃に加熱し、超音波により２ｍｌ／ｍｉｎ霧化させ基
板に導入し、２分間成膜した。Example 2 When forming an ITO film by the atmospheric pressure CVD method (pyrosol film forming method) by ultrasonic atomization, a methyl alcohol solution of InCl 3 was used as an indium raw material. The concentration is 0.15 mol / l, and SnCl 2 is used as a tin material for doping.
Methyl alcohol solution of 4 (concentration 0.2mol / l)
Was used to prepare a solution in which 25 wt% Sn was added to In. The substrate used was a soda lime glass having a thickness of 1 mm and a size of 10 cm and coated with a 1000 Å SiO 2 film. Set the substrate in the pyrosol film forming device
It was heated to 0 ° C., atomized by ultrasonic waves at 2 ml / min, introduced into the substrate, and formed into a film for 2 minutes.
【００２２】得られたＩＴＯ膜は、膜中のＳｎが１９．
６重量％であり膜厚２４０Å、シート抵抗２７０Ω／
□、比抵抗６．５×１０-4Ωcmであった。この膜を空気
雰囲気中で電気炉にて３００℃３０分加熱処理を行った
ところ、シート抵抗４９０Ω／□、比抵抗１．２×１０
-3Ωcmに増加した。また、シート抵抗の均一性は±３０
Ω／□以内（６．１％）であった。In the obtained ITO film, Sn in the film was 19.
6% by weight, film thickness 240Å, sheet resistance 270Ω /
□, the specific resistance was 6.5 × 10 −4 Ωcm. When this film was heat-treated in an electric furnace at 300 ° C. for 30 minutes in an air atmosphere, the sheet resistance was 490 Ω / □ and the specific resistance was 1.2 × 10 5.
Increased to -3 Ωcm. The sheet resistance uniformity is ± 30.
It was within Ω / □ (6.1%).
【００２３】[0023]
【発明の効果】本発明によれば、膜中のＳｎドープ量を
コントロールすることで比較的容易に均一性の良好な２
００Ω〜１０００Ω／□のシート抵抗のＩＴＯ膜を得る
ことができる。また、該方法と酸素含有雰囲気中で２０
０℃以上の温度で加熱処理することで、より高抵抗の膜
を得ることができるので、その実用的価値は極めて大で
ある。According to the present invention, by controlling the amount of Sn doping in the film, it is relatively easy to obtain good uniformity.
An ITO film having a sheet resistance of 00Ω to 1000Ω / □ can be obtained. Also, the method and 20 in an oxygen-containing atmosphere
By performing heat treatment at a temperature of 0 ° C. or higher, a film with higher resistance can be obtained, so that its practical value is extremely large.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 瀬田 康弘 千葉県市原市五井南海岸12−54 日本曹達 株式会社機能製品研究所内 Ｆターム(参考） 4G059 AA08 AC12 EA03 EB04 EB05 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Yasuhiro Seta 12-54 Goi Minami Coast, Ichihara City, Chiba Prefecture Functional Product Laboratory Co., Ltd. F-term (reference) 4G059 AA08 AC12 EA03 EB04 EB05
Claims (8)
０〜４０重量％で成膜してシート抵抗の均一性が６％以
内であることを特徴とするスズドープ酸化インジウム膜
の成膜方法。1. The tin content of the film is 1 relative to indium.
A method for forming a tin-doped indium oxide film, characterized in that the film resistance is 0 to 40% by weight, and the sheet resistance uniformity is within 6%.
０〜４０重量％で成膜後、酸素を含む雰囲気中で２００
℃以上の温度で加熱処理してシート抵抗の均一性が６％
以内であることを特徴とするスズドープ酸化インジウム
膜の成膜方法。2. The tin content in the film is 1 relative to indium.
After forming a film with 0 to 40% by weight, 200 in an atmosphere containing oxygen.
Uniformity of sheet resistance is 6% by heat treatment at temperature above ℃
The method for forming a tin-doped indium oxide film is characterized in that
０〜４０重量％であり、スパッター法又はパイロゾル法
で成膜することを特徴とするスズドープ酸化インジウム
膜の成膜方法。3. The tin content in the film is 1 relative to indium.
A method for forming a tin-doped indium oxide film, which comprises 0 to 40% by weight and is formed by a sputtering method or a pyrosol method.
０〜４０重量％であり、スパッター法又はパイロゾル法
で成膜後、酸素を含む雰囲気中で２００℃以上の温度で
加熱処理することを特徴とするスズドープ酸化インジウ
ム膜の成膜方法。4. The tin content in the film is 1 relative to indium.
A method for forming a tin-doped indium oxide film, which comprises 0 to 40% by weight, and heat-treating at a temperature of 200 ° C. or higher in an atmosphere containing oxygen after forming the film by a sputtering method or a pyrosol method.
ることを特徴とする請求項１〜４記載のスズドープ酸化
インジウム膜の成膜方法。5. The method for forming a tin-doped indium oxide film according to claim 1, wherein the sheet resistance is 200 to 1000 Ω / □.
る請求項１〜５記載のスズドープ酸化インジウム膜の成
膜方法。6. The method for forming a tin-doped indium oxide film according to claim 1, wherein the film thickness is 150 Å or more.
とする請求項１〜６記載のスズドープ酸化インジウム膜
の成膜方法。7. The method for forming a tin-doped indium oxide film according to claim 1, wherein the specific resistance is 5 × 10 −4 or more.
る請求項１〜７記載のスズドープ酸化インジウム膜の成
膜方法。8. The method for forming a tin-doped indium oxide film according to claim 1, which is a film for a touch panel.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10026920B2 (en) | 2016-10-07 | 2018-07-17 | Japan Display Inc. | Organic EL display device |
| CN114534990A (en) * | 2022-01-11 | 2022-05-27 | 西安理工大学 | ITO thin film suitable for flexible device and preparation method thereof |
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2002
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10026920B2 (en) | 2016-10-07 | 2018-07-17 | Japan Display Inc. | Organic EL display device |
| CN114534990A (en) * | 2022-01-11 | 2022-05-27 | 西安理工大学 | ITO thin film suitable for flexible device and preparation method thereof |
| CN114534990B (en) * | 2022-01-11 | 2023-03-14 | 西安理工大学 | ITO thin film suitable for flexible device and preparation method thereof |
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